Class / Patent application number | Description | Number of patent applications / Date published |
216096000 | Etching inorganic substrate | 75 |
20100213175 | Diamond etching method and articles produced thereby - There are provided simplified methods for etching diamond, as compared to conventional methods. More particularly, the methods disclosed herein involve contacting at least a portion of the diamond with a metal or metal oxide so that redox etching of the contacted portion of the diamond occurs. Also provided are diamonds polished using the present method, as well as optical windows, heat sinks, cutting tools and electrical components incorporating diamonds polished/etched via the disclosed method. | 08-26-2010 |
20110180513 | HALLOW CARBON SPHERES - A hollow carbon sphere having a carbon shell and an inner core is disclosed. The hollow carbon sphere has a total volume that is equal to a volume of the carbon shell plus an inner free volume within the carbon shell. The inner free volume is at least 25% of the total volume. In some instances, a nominal diameter of the hollow carbon sphere is between 10 and 180 nanometers. | 07-28-2011 |
20140144880 | Method of Surface Treatment for Zirconia Dental Implants - A method of surface treatment for zirconium oxide implants and the etching formula for the same are disclosed. The processes are carried out at room temperature. The average surface roughness Ra and the standard deviation of the implant are measured showing significant improvement while comparing with the un-treated sample and the hydrofluoric acid treated samples. The average contact angle is provided showing an almost hydrophilic surface after etched by the formula according to the present invention. | 05-29-2014 |
216097000 | Substrate is glass | 9 |
20090045169 | Mirror etching composition - A mirror etching composition comprising a solution of water, sulfated potash and vegetable glycerin and, when applied to the electroplated non-reflective surface of a mirror, effectively simulates the appearance of a tarnished or deteriorated “antique” mirror. The electroplated surface applied to the back of new mirrors is normally sealed with a painted protective coating. In order to etch the electroplated surface on new mirrors, the painted protective coating must be stripped with a paint or varnish remover to expose the electroplated surface. After this mirror etching composition is applied to the electroplated non-reflective surface and the desired effect has been achieved, the electroplated surface may be sealed with a painted protective coating. New mirrors that have been electroplated and not yet sealed with a painted protective coating may be treated with this mirror etching composition before sealing. | 02-19-2009 |
20100282712 | Etching Compositions, Methods and Printing Components - A liquid etching composition comprising: (a) at least one etching agent precursor having an activation temperature of at least 400° C., at which temperature said precursor yields an active agent suitable for chemical etching of glass, said precursor present at a concentration of at least 2.5% w/w; (b) a binder; and (c) a liquid vehicle. | 11-11-2010 |
20140339194 | MEDIA AND METHODS FOR ETCHING GLASS - Described herein are aqueous acidic glass etching solutions or media comprising HF and H | 11-20-2014 |
20150041435 | METHODS OF POST PROCESSING A GLASS SHEET - Methods provide for post processing at least one flexible glass sheet with the step of providing the glass sheet with an initial shape. The method then further includes the step of flexing the glass sheet into a secondary shape from the initial shape. The method then further includes the step of post processing the glass sheet while biasing the glass sheet into the secondary shape. The method then still further includes the step of releasing the glass sheet to at least partially return to the initial shape. | 02-12-2015 |
20150048053 | SELECTIVE ETCHING METHOD - A layer of a metal selected from titanium, niobium, tungsten, molybdenum, ruthenium, rhodium, arsenic, aluminum and gallium, an oxide of the metal, a nitride of the metal, silicon nitride, hafnium nitride, tantalum nitride, or an alloy of these metals, the layer being provided on an underlying base material selected from glass, silicon, copper and nickel, is selectively etched with an alkaline etching solution containing a predefined complexing agent. | 02-19-2015 |
20150136736 | Method for Sludge Control in Wet Acid Etching - The disclosure is directed to a method for controlling the sludge that is generated during the wet acid etching of glass articles. The four Factors that need to be controlled are (i) the dissolved glass level A; (ii) the HF concentration B; (iii) the second acid concentration C, the second acid being a strong acid, and (iv) the solubility constant D of the precipitate, Ksp, which is controlled by changing temperature or ionic strength. The disclosed method utilized HF as the etchant and a strong acid selected from the group consisting of HCI, H | 05-21-2015 |
20160102012 | METHOD FOR TREATING A SURFACE AND DEVICE IMPLEMENTED - The present invention relates to a method for treating a surface of an object which comprises the steps consisting of bringing the surface to be treated in contact with a diffusion intermediate and then maintaining said surface to be treated in contact with said diffusion intermediate without any movement relatively to each other, said diffusion intermediate being impregnated with a corrosive solution prior to contacting or during said contacting. The present invention also relates to a device implemented during such a method. | 04-14-2016 |
20160145149 | ETCH RATE ENHANCEMENT AT LOW TEMPERATURES - A method etching a glass material comprises providing an etchant comprising 10-30% HF, 5-15% HNO | 05-26-2016 |
20190148142 | METHOD FOR PRODUCING GLASS SUBSTRATE WITH THROUGH GLASS VIAS AND GLASS SUBSTRATE | 05-16-2019 |
216099000 | Substrate contains silicon or silicon compound | 18 |
20080203060 | ETCHING METHOD AND ETCHING COMPOSITION USEFUL FOR THE METHOD - In etching of silicon nitride with a phosphorus type, if etching is carried for a long time, silicon oxide tends to precipitate, and it has been impossible to constantly carry out the etching for a long period of time. | 08-28-2008 |
20080237190 | SURFACE CLEANING METHOD OF SEMICONDUCTOR WAFER HEAT TREATMENT BOAT - A surface cleaning method of a semiconductor wafer heat treatment boat that can prevent metallic contamination to semiconductor wafers and keep down a production time and manufacturing costs of semiconductor wafers by efficiently and easily removing metallic impurities in an oxide film on an SiC boat surface is provided. A surface cleaning method of a semiconductor wafer heat treatment boat according to an embodiment of the present invention is a surface cleaning method of a semiconductor wafer heat treatment boat whose surface is formed of SiC, includes oxidizing the surface of the heat treatment boat by thermal oxidation and etching a portion of the oxide film formed after oxidation is removed. | 10-02-2008 |
20080283503 | Method of Processing Nature Pattern on Expitaxial Substrate - A method of processing nature pattern on expitaxial substrate, unlike the conventional method of processing regular pattern on expitaxial substrate (such as sapphire substrate) by lithography, wet etches a sapphire substrate directly to obtain a nature pattern, so as to simplify the fabrication process. Compared with the conventional way of processing pattern sapphire, the nature pattern sapphire substrate produced by the method can avoid voids between the interface of sapphire and GaN and apply this technology to a wired bond LED structure to increase the sidewall light extraction and improve the texture of the sapphire surface of a flip chip LED structure. In addition, this method also can be applied to a thin-GaN LED for achieving the surface texture after the sapphire is removed by laser. | 11-20-2008 |
20090065482 | METHOD OF MANUFACTURING SUBSTRATE FOR LIQUID DISCHARGE HEAD - Provided is a method of manufacturing a substrate for a liquid discharge head, the substrate including a silicon substrate with a liquid supply opening formed therein, the method including: forming one processed portion by laser processing on the substrate from one surface of the substrate; expanding the one processed portion to form a recess portion by performing laser processing at a position which overlaps a part of the one processed portion and does not overlap another part of the one processed portion; and etching from the one surface the substrate with the recess portion formed therein to form the liquid supply opening. | 03-12-2009 |
20090127228 | STRUCTURED METHOD - A method of structuring multicrystalline silicon surfaces comprises the provision of a texturing solution, the application of the texturing solution to a surface of a semiconductor substrate to be structured and the heating of the texturing solution to a texturing temperature, wherein the texturing solution comprises at least a portion of phosphoric acid. | 05-21-2009 |
20090236317 | ANTI-REFLECTION ETCHING OF SILICON SURFACES CATALYZED WITH IONIC METAL SOLUTIONS | 09-24-2009 |
20090272720 | METHOD AND HEATING DEVICE FOR FORMING LARGE GRAIN SIZE SILICON MATERIAL STRUCTURE FOR PHOTOVOLTAIC DEVICES - A method for forming polysilicon material for photovoltaic cells. A first silicon material characterized by a first purity level is provided. The first silicon material is subjected to a thermal process to transform the first silicon material to a molten state confined in a first spatial volume. The molten first silicon material is subjected to a directional cooling process provided in a second spatial volume for a predetermined period, removing thermal energy from a first region. A polycrystalline silicon material characterized by a second purity level and an average grain size greater than about 0.1 mm is formed from the molten first silicon material in a vicinity of the first region. One or more silicon wafers is formed from the polycrystalline silicon material. A polysilicon film material characterized by a grain size greater than about 0.1 mm is deposited overlying each of the silicon wafers. | 11-05-2009 |
20100044344 | Silicon Nanoparticle Formation From Silicon Powder and Hexacholorplatinic Acid - A silicon nanoparticle formation method that can rapidly produce substantial quantities of silicon nanoparticles, which are readily recoverable for subsequent uses. Methods of the invention treat silicon powder in hexachloroplatinic acid. The treated silicon powder is then etched with an etching solution of HF/H | 02-25-2010 |
20100108642 | METHOD FOR REMOVING FINE-GRAIN SILICON MATERIAL FROM GROUND SILICON MATERIAL AND APPARATUS FOR CARRYING OUT THE METHOD - A method and an apparatus for removing fine-grain silicon material from coarse-grain ground silicon material are disclosed. In the method, ground silicon material is selected that exhibits a predominantly brown color in an aqueous suspension, indicating that a considerable fraction of the ground silicon material has a grain size of less than 0.25 μm, and the ground silicon material is supplied to a reaction vessel. An aqueous or water-containing solution of a base is added to the ground silicon material, causing an etching process which chemically removes a fine fraction with a grain size of less than approximately 1 μm. Acid or water is then added to terminate etching and cause rapid sedimentation of a suspension in form of a relatively coarse-grain solid, which can be removed for further processing. The solution formed above the relatively coarse-grain solid can also be withdrawn. | 05-06-2010 |
20100224593 | Acid Corrosion Solution for Preparing Polysilicon Suede and the Applied Method of It - An acid corrosion solution for preparing polysilicon suede is obtained by mixing with an oxidant and a hydrogen fluoride. The oxidant is a nitrate or nitrite. The method applied of the solution includes putting the polysilicon cut pieces into the acid corrosion solution to carry out the corrosion reaction. The reaction time is about 30 seconds to 20 minutes and the temperature of acid corrosion solution is −10° C. to 25° C. | 09-09-2010 |
20120091100 | ETCHANT FOR CONTROLLED ETCHING OF GE AND GE-RICH SILICON GERMANIUM ALLOYS - The present disclosure provides a chemical etchant which is capable of removing Ge and Ge-rich SiGe alloys in a controlled manner. The chemical etchant of the present disclosure includes a mixture of a halogen-containing acid, hydrogen peroxide, and water. Water is present in the mixture in an amount of greater than 90% by volume of the entire mixture. The present disclosure also provides a method of making such a chemical etchant. The method includes mixing, in any order, a halogen-containing acid and hydrogen peroxide to provide a halogen-containing acid/hydrogen peroxide mixture, and adding water to the halogen-containing acid/hydrogen peroxide mixture. Also disclosed is a method of etching a Ge or Ge-rich SiGe alloy utilizing the chemical etchant of the present application. | 04-19-2012 |
20120187088 | LIQUID PROCESSING METHOD, LIQUID PROCESSING APPARATUS AND STORAGE MEDIUM - There are provided a liquid processing method and a liquid processing apparatus capable of providing a high etching rate and a high etching selectivity for silicon nitride against silicon oxide, and a storage medium storing the method thereon. In the method for etching, by an etching solution, a substrate on which silicon nitride and silicon oxide are exposed, the etching solution is produced by mixing a fluorine ion source material, water and a boiling point adjusting agent; the produced etching solution is heated to a substrate processing temperature equal to or higher than 140° C.; after a temperature of the etching solution reaches the substrate processing temperature, the temperature of the etching solution is maintained at the substrate processing temperature for a first preset time; and after a lapse of the first preset time, the substrate is etched by the etching solution maintained at the substrate processing temperature. | 07-26-2012 |
20140001156 | Method for Etching a Ceramic Phosphor Converter | 01-02-2014 |
20140021169 | POLYIMIDE-CONTAINING LAYER AND METHOD FOR ETCHING POLYIMIDE-CONTAINING LAYER - The disclosure provides a polyimide-containing layer suitable for being etched by an alkaline solution and a method for etching a polyimide-containing layer. The polyimide-containing layer suitable for being etched by an alkaline solution includes 20-50 parts by weight of a silica dioxide, and 50-80 parts by weight of a polyimide. | 01-23-2014 |
20140284309 | Metal Oxide Activated Cement - A cement including: an alkali silicate; an organic silicate; a compound selected from a group consisting of Pozzolanic compounds and synthetic Pozzolanic substitutes; a metal oxide; an activator. | 09-25-2014 |
20160047048 | METHOD FOR MANUFACTURING NANOWIRES - A method of manufacturing a nanowire includes: forming a silicon oxide layer by performing deposition of a silicon oxide on a substrate; forming a metal layer by performing deposition of a metal on the silicon oxide layer; forming a metal agglomerate by performing heat treatment on the substrate where the metal layer is formed; and growing a nanowire in an area where the metal agglomerate is formed by performing plasma treatment on the substrate where the metal agglomerate is formed. | 02-18-2016 |
20160115593 | AMINO(IODO)SILANE PRECURSORS FOR ALD/CVD SILICON-CONTAINING FILM APPLICATIONS AND METHODS OF USING THE SAME - Disclosed are amino(iodo)silane precursors, methods of synthesizing the same, and methods of using the same to deposit silicon-containing films using vapor deposition processes. The disclosed amino(iodo)silane precursors include SiH | 04-28-2016 |
20160201201 | PELLICLES AND METHODS OF MANUFACTURING THE SAME | 07-14-2016 |
216100000 | Substrate contains elemental metal, alloy thereof, or metal compound | 45 |
20090184092 | Palladium-Selective Etching Solution and Method for Controlling Etching Selectivity - Disclosed is an iodine-based etching solution for etching a material wherein palladium and gold coexist. This etching solution contains at least one additive selected from the group consisting of nitrogen-containing five-membered ring compounds, alcohol compounds, amide compounds, ketone compounds, thiocyanic acid compounds, amine compounds and imide compounds. The etching rate ratio between palladium and gold (etching rate of palladium/etching rate of gold) is not less than 1. | 07-23-2009 |
20090255903 | COMPOSITIONS FOR CHEMICAL-MECHANICAL PLANARIZATION OF NOBLE-METAL-FEATURED SUBSTRATES, ASSOCIATED METHODS, AND SUBSTRATES PRODUCED BY SUCH METHODS - A composition for chemical-mechanical planarization comprises periodic acid and an abrasive present in a combined amount sufficient to planarize a substrate surface having a feature thereon comprising a noble metal, noble metal alloy, noble metal oxide, or any combination thereof. In one embodiment, the periodic acid is present in an amount in a range of from about 0.05 to about 0.3 moles/kilogram, and the abrasive is present in an amount in a range of from about 0.2 to about 6 weight percent. In another embodiment, the composition further comprises a pH-adjusting agent present in an amount sufficient to cause the pH of the composition to be in a range of from about pH 5 to about pH 10, or of from about pH 1 to about pH 4. | 10-15-2009 |
20110031219 | CYLINDER BARREL INSIDE SURFACE TREATMENT APPARATUS AND METHOD - A cylinder barrel inside surface treatment apparatus for providing a uniform treatment finish is disclosed. The treatment apparatus includes a pallet on which a cylinder block is placed with a gasket surface faced upward. A top opening of a cylinder barrel of the cylinder block is covered by a cover member having a concave portion communicating with the top opening. A nozzle having treatment solution spray holes is attached to the cover member. The treatment solution is sprayed toward a wall of the concave portion from the treatment solution spray holes and flows along the wall from a top end to a bottom end of the cylinder barrel inside surface. | 02-10-2011 |
20110100957 | METHOD OF FORMING A PATTERNED SUBSTRATE - A method of forming a petterned substracte is provided. The method includes providing a substrate ( | 05-05-2011 |
20120132621 | METAL ETCHING METHOD, METAL ETCHING CONTROL METHOD AND CONTROL DEVICE THEREOF - Disclosed is a metal etching method, a metal etching control method and a control device thereof. The metal etching control method is employed in a metal wet etching machine and comprises steps below: performing etching to a metal film and acquiring an etching end time of the metal film; multiplying the etching end time with a constant ratio to acquire the over etching time of the metal film; and performing etching to the metal film with the over etching time to complete the etching to the metal film. The present invention can precisely judge a total real etching time needed for each of a batch of metal films as performing metal etching to the metal films to reduce the issue of unstable etching qualities as the metal film thicknesses are not regular. | 05-31-2012 |
20120312783 | METHOD OF MANUFACTURING A BEARING COMPONENT - The present invention relates to a method of manufacturing a bearing component, in which a visible identification mark is created on a surface of the component using a laser beam. The laser marking creates an oxidised layer on the component surface and, in an underlying region, alters the microstructure of the bearing steel from which the component is made. According to the invention, the mark is then rendered visually undetectable with the naked eye, by removing at least the oxidised surface layer of the mark. This exposes the altered microstructure, which is revealable by applying an etchant to the visually undetectable mark. | 12-13-2012 |
20140144881 | NANOWIRE MANUFACTURING METHOD - Provided is a nanowire manufacturing method, comprising forming a plurality of grid patterns on a substrate, forming a nanowire on the grid patterns, and separating the grid pattern and the nanowire. According to the present invention, the width and height of the nanowire can be adjusted by controlling the wet-etching process time period, and the nanowire can be manufactured at a room temperature at low cost, the nanowire can be mass-manufactured and the nanowire with regularity can be manufactured even in case of mass production. | 05-29-2014 |
20140263185 | Etching Solutions - The present invention provides an etching solution for silver or silver alloy comprising one at least ammonium compound represented by the formula (1), (2) or (3) below and an oxidant: | 09-18-2014 |
20150136737 | METHODS OF GROWING UNIFORM, LARGE-SCALE, MULTILAYER GRAPHENE FILM - Methods of growing a multilayer graphene film ( | 05-21-2015 |
20160052788 | GRAPHENE STRUCTURE AND METHOD OF MANUFACTURING THE SAME - A graphene dot structure and a method of manufacturing the same. The graphene dot structure includes a core including a semiconductor material; and a graphene shell formed on the surface of the core. The graphene dot structure may form a network. | 02-25-2016 |
216101000 | Etching of a compound containing at least one oxygen atom and at least one metal atom | 3 |
20100102033 | METHOD FOR PREPARING NANOTUBES OF PIEZOELECTRIC MATERIAL AND NANOTUBES OF PIEZOELECTRIC MATERIAL OBTAINED THEREBY - A method for preparing nanotubes by providing nanorods of a piezoelectric material having an asymmetric crystal structure and by further providing hydroxide ions to the nanorods to etch inner parts of the nanorods to form the nanotubes. | 04-29-2010 |
20100147802 | METHODS AND REMOVERS FOR REMOVING ANODIZED FILMS - A remover contains an alkaline component, a bivalent zinc ion, a ferric ion, a chelating agent, and a nitrate ion. By using this remover, an anodized film can be selectively removed from an aluminum or aluminum-alloy member. | 06-17-2010 |
20120205345 | TREATMENT SOLUTION FOR PREVENTING PATTERN COLLAPSE IN METAL FINE STRUCTURE BODY, AND PROCESS FOR PRODUCTION OF METAL FINE STRUCTURE BODY USING SAME - There are provided a processing liquid for suppressing pattern collapse of a fine metal structure, containing a pattern collapse suppressing agent that has a hydrocarbyl group containing any one of an alkyl group and an alkenyl group, both of which may be substituted partly or entirely by a fluorine atom, and contains an oxyethylene structure, and a method for producing a fine metal structure using the same. | 08-16-2012 |
216102000 | Metal is elemental aluminum, an alloy, or compound thereof | 9 |
20100018952 | Process for removing a coating from a substrate - A process of stripping a coating according to the invention comprises subjecting a coated substrate to an aqueous medium containing a peroxide and an interfacial mixing agent, and to heating preferably by either ultraviolet (UV) and/or infrared (IR) radiation. The substrate is completely stripped of the coating and suffers no damage to itself as a result of the paint debonding/dislodging process. No toxic wastes are generated from this process, nor are particulates associated with air pollution generated. The metal substrates being stripped also do not undergo corrosion or other damage as a result of the described process. | 01-28-2010 |
20130153537 | METHOD FOR FORMING ANODIZED LAYER AND MOLD PRODUCTION METHOD - An anodized layer formation method includes: providing an aluminum film provided on a support or an aluminum base; and forming a porous alumina layer which has minute recessed portions by applying a voltage between an anode which is electrically coupled to a surface of the aluminum film or the aluminum base and a cathode which is provided in an electrolytic solution with the surface of the aluminum film or the aluminum base being in contact with the electrolytic solution. The forming of the porous alumina layer includes increasing the voltage to a target value and, before the voltage is increased to the target value, increasing the voltage to a first peak value which is lower than the target value and thereafter decreasing the voltage to a value which is lower than the first peak value. As such, an anodized layer with reduced variation of recessed portions can be formed. | 06-20-2013 |
216103000 | Etchant contains acid | 7 |
20120312784 | SURFACE ROUGHENING AGENT FOR ALUMINUM, AND SURFACE ROUGHENING METHOD USING SAID SURFACE ROUGHENING AGENT - Provided are a surface roughening agent for aluminum and a surface roughening method using said surface roughening agent wherein it is possible to easily reduce costs for the surface roughening step and to improve the adhesiveness between aluminum and a resin. Specifically, provided is a surface roughening agent for aluminum comprising an aqueous solution containing: an alkali source, an amphoteric metal ion, a nitrate ion, and a thio compound. Moreover, provided is a surface roughening method for aluminum which involves a surface roughening step in which the surface of aluminum is treated with the aforementioned surface roughening agent. | 12-13-2012 |
20160067894 | METHOD OF PREPARING ALUMINUM-RESIN COMPLEX - Provided is a method of preparing an aluminum-resin complex in which an aluminum alloy and a resin composition are integrated with each other. More particularly, the present invention is relates to a method of preparing an aluminum-resin complex having improved bonding strength by preparing an aluminum alloy having a more uniform etching surface using an alkaline aqueous solution to which a chelating agent and a cycloamine are added and an acidic aqueous solution to which a chelating agent is added and injection-molding a resin composition using the aluminum alloy. | 03-10-2016 |
216104000 | Etchant contains fluoride ion | 5 |
20090261068 | METHOD FOR SELECTIVELY REMOVING COATINGS FROM METAL SUBSTRATES - A method for selectively removing an aluminum-poor overlay coating from a substrate of a component, which as a result of its low aluminum content is highly resistant to a selective stripping solution. The method entails diffusing aluminum into the overlay coating to form an aluminum-infused overlay coating having an increased aluminum level in at least an outer surface thereof. The diffusion step is carried out so that the increased aluminum level is sufficient to render the aluminum-infused overlay coating removable by selective stripping. The outer surface of the aluminum-infused overlay coating is then contacted with an aqueous composition to remove the aluminum-infused overlay coating from the substrate. The aqueous composition includes at least one acid having the formula H | 10-22-2009 |
20120298626 | Methods and Compositons for Acid Treatment of a Metal Surface - The invention relates to compositions and methods that are useful in etching a metal surface. In particular, the invention relates to novel acid compositions and methods of using such compositions in etching a metal surface, preferably an aluminum surface prior to anodizing to dissolve impurities, imperfections, scale, and oxide. The compositions are effective in maintaining their etching capacity and in removing smut produced by the etching of a surface as well as in general cleaning. | 11-29-2012 |
20130299456 | METHOD OF REMOVING WORK-AFFECTED LAYER - Disclosed is a method of removing a work-affected layer formed on the worked surface of a TiAl-based alloy (base material) by machining work, without exerting any adverse effect on the base material. The method of removing a work-affected layer includes a step of dipping a TiAl-based alloy, having a work-affected layer formed on the surface thereof by machining, in an etchant containing predetermined concentrations of hydrofluoric acid and nitric acid, wherein within the etchant, the concentration of the hydrofluoric acid is not less than 5 g/L and not more than 56 g/L, and the concentration of the nitric acid is selected from within a range from not less than 50 g/L to not more than 260 g/L in accordance with a combination of the concentration of the hydrofluoric acid within the etchant and the etching treatment temperature. | 11-14-2013 |
20130334173 | Methods and Compositions for Acid Treatment of a Metal Surface - The invention relates to compositions and methods that are useful in etching a metal surface. In particular, the invention relates to novel acid compositions and methods of using such compositions in etching a metal surface, preferably an aluminum surface prior to anodizing to dissolve impurities, imperfections, scale, and oxide. The compositions are effective in maintaining their etching capacity and in removing smut produced by the etching of a surface as well as in general cleaning. | 12-19-2013 |
20150076114 | METHOD FOR THE PREPARATION OF SURFACES OF DEVICES MADE OF TITANIUM OR TITANIUM ALLOYS, ZIRCONIUM, ZIRCONIA, ALUMINA OR ZIRCONIA/ALUMINA COMPOUNDS, STAINLESS STEELS FOR MEDICAL USE AND COBALT-BASE SUPERALLOYS FOR MEDICAL USE IMPLANTABLE IN THE HUMAN OR ANIMAL BODY, HAVING AS A RESULT NANOMETER ROUGHNESS, FORMATION OF SELF-INDUCED SURFACE OXIDE, HIGH ANTI-METALOSIS CLEANING AND POSSIBLE PREPARATION OF PARTS WITH SURFACE ANTIMICROBIAL TREATMENT - A method for the surface preparation of devices made of titanium or titanium alloys, zirconium, zirconia, alumina or zirconia/alumina compounds, stainless steels and cobalt-base superalloys for medical use; the devices being implantable in the human body or in animals and attached extracorporeal parts made with the same materials, particularly for dental and orthopedic implantology. The implantable device is treated by exposing at least one portion of the surface of the device to a solution including hydrofluoric acid, phosphoric acid, at least one surfactant substance and water; for a time period and in conditions sufficient to provide the surface of the implant with the desired surface roughness and the formation of self-induced surface titanium dioxide, maintaining the structural integrity of the device and without altering the centesimal measurement size. The surface thus is rinsed with demineralized water and ultrasounds in order to prevent metalosis phenomena. | 03-19-2015 |
216105000 | Metal is elemental copper, an alloy, or compound thereof | 9 |
20080245771 | METHOD FOR PROCESSING A SURFACE - A method for processing a surface involves depositing at least one class of enzymes ( | 10-09-2008 |
20110089143 | HIGHLY DILUTABLE POLISHING CONCENTRATES AND SLURRIES - The present disclosure provides a concentrate for use in chemical mechanical polishing slurries, and a method of diluting that concentrate to a point of use slurry. The concentrate comprises abrasive, complexing agent, and corrosion inhibitor, and the concentrate is diluted with water and oxidizer. These components are present in amounts such that the concentrate can be diluted at very high dilution ratios, without affecting the polishing performance. | 04-21-2011 |
20130240484 | ELECTROLESS COPPER ALLOY CAPPING - A method for providing copper filled features in a layer is provided. A deposition of copper is provided to fill features in the layer. Tops of the copper deposit are cleaned to remove copper or copper oxide at tops of the copper deposit. A selective copper alloy plating on the tops of the copper deposit is provided. The copper deposit and selective copper alloy plating are annealed. | 09-19-2013 |
20140353278 | COPPER FOIL FOR PRODUCING GRAPHENE AND METHOD OF PRODUCING GRAPHENE USING THE SAME - A copper foil for producing graphene including Cu having a purity of 99.95% by mass or more. | 12-04-2014 |
216106000 | Etchant contains acid | 5 |
20100000971 | ADHESIVE LAYER FORMING LIQUID - An object of the present invention is to provide an adhesive layer forming liquid about which deterioration in adhesive-layer-forming capability with the passage of time can be restrained and further the smoothness of an adhesive layer surface can be certainly kept. The adhesive layer forming liquid of the present invention is an adhesive layer forming liquid, which is a liquid for forming an adhesive layer for bonding copper and a resin to each other, and which is an aqueous solution comprising an acid, a stannic salt, a complexing agent, a stabilizer, and a complexing restrainer for restraining a complexing reaction between the complexing agent and copper. | 01-07-2010 |
20100288731 | Solution and Process to Treat Surfaces of Copper Alloys in Order to Improve the Adhesion Between the Metal Surface and the Bonded Polymeric Material - The invention concerns processes and solutions for the treatment of copper alloy surfaces, which are subsequently to be firmly bonded to polymeric material. The solution is used, in particular for firmly bonding lead frames to encapsulating molding compounds (polymeric material). The solution contains an oxidant, at least one acid, at least one adhesion-enhancing compound characterized in that the solution additionally contains fluoride ions in an amount of at least 100 mg per litre and chloride ions in an amount of 5 to 40 mg per litre. The solution is particularly useful for treatment of copper alloy surfaces, containing alloying elements selected from the group consisting of Si, Ni, Fe, Zr, P, Sn and Zn. | 11-18-2010 |
20110049104 | ETCHANT FOR COPPER OR COPPER ALLOY, LIQUID FOR ETCHING PRETREATMENT, AND ETCHING METHOD - An etchant for copper or copper alloy, which contains water as a main component and comprises (1) 1 to 20 mass % of iron (III) chloride and (2) 5 to 100 mass %, based on the iron chloride, of oxalic acid, and an etching method using the above etchant are provided, and the etching method includes pretreatment to be carried out with an aqueous solution containing at least one component selected from a component that dissolves copper or copper alloy and an acid, whereby well yields can be materialized. | 03-03-2011 |
20150307999 | AQUEOUS COMPOSITION FOR ETCHING OF COPPER AND COPPER ALLOYS - The present invention relates to an aqueous composition for and a process for etching copper and copper alloys applying said aqueous composition. The aqueous composition comprises a source for Fe | 10-29-2015 |
20160160359 | PREPARATION OF CORROSION-PROTECTIVE COPPER PASTE THROUGH SINGLE PROCESS AND APPLICATION THEREOF TO DIPOLE TAG ANTENNA - Provided are a method of producing corrosion-protective copper paste through a single process and an application thereof to a dipole tag antenna. Copper powder is surface-etched by using a hydrochloric acid in an inert gas atmosphere, a phosphoric acid aqueous solution is added thereto to form copper phosphate on the etched surface of the copper powder, and then, a vinyl imidazole-silane copolymer and poly(4-styrenesulfonate) were introduced thereto to form a corrosion-protective coating layer on the surface of copper powder on which the copper phosphate has been formed, and a centrifuge and an agate mortar are used to prepare a copper paste having high viscosity and high dispersability. When a copper paste thin film is formed on a flexible film by screen printing, a produced dipole tag antenna may have high efficiency. | 06-09-2016 |
216108000 | Etchant contains acid | 14 |
20090008365 | Microtextured Implants and Methods of Making Same - The present invention concerns a process for etching metal by contacting the metal with a solution comprising hydrogen chloride and a persulfate salt; wherein the solution has a hydrogen chloride concentration of about 3 to about 11.7 moles/liter and a molar ratio of hydrogen chloride to persulfate salt of about 4:1 to about 134:1, wherein the persulfate salt is dissolved in the solution with the use of heat input. | 01-08-2009 |
20090302005 | PROCESSES FOR TEXTURING A SURFACE PRIOR TO ELECTROLESS PLATING - Process for roughening a surface of a base metal substrate includes contacting the surface with an aqueous solution comprising oxalic acid, sulfuric acid, and hydrogen peroxide at a temperature and for a period of time effective to roughen the surface to an average roughness greater than 60 Ra, removing a modest amount of base material, and generating no narrow and deep crevices at all. The surface is roughened prior to application of an electroless coating onto the substrate. | 12-10-2009 |
20100089873 | ENHANCED METAL WICKING SURFACE - A method of producing a metal structure with a grooved wicking surface is provided. An aluminum alloy is provided that is thermomechanically processed to produce grain size and shape suitable for wicking. Then, the alloy is heat treated to produce a continuous etchable phase on the grain boundaries. The alloy is then etched with a solvent that dissolves the continuous etchable phase on the grain boundaries to produce the metal structure with a grooved wicking surface. In addition, the method of producing a laminate metal structure with a grooved wicking surface is provided. The laminate is provided with at least a top layer and a bottom layer where the top layer and bottom layer are made of an aluminum alloy. The laminate is thermomechanically processed to produce grain size and shape spanning the entire depth of the top layer suitable for wicking. Then, the laminate is heat treated to produce a continuous etchable phase on the grain boundaries within the top layer. The laminate is then etched with a solvent that dissolves the continuous etchable phase on the grain boundaries of the top layer to produce the metal structure with a grooved wicking surface where the grooves have a depth equal to the thickness of the top layer where the bottom layer is substantially free of the etchable phase on the grain boundaries. | 04-15-2010 |
20110290760 | METHOD FOR PRODUCING PLASTIC SHELL - A method for producing plastic shell includes following steps. Provide a male mold and a female mold, then chemically etching a first texture on a surface of the female mold. Form a second texture on the surface of the female mold. Produce a plastic shell with various types of textures using the male mold and the female mold. | 12-01-2011 |
20120305529 | IMPLANTABLE MATERIALS HAVING ENGINEERED SURFACES AND METHOD OF MAKING SAME - Implantable materials having engineered surfaces and method of making same comprising geometric features on at least one surface of the material having at least one of chemical, physiochemical and electrochemical activity different than regions of the at least one surface without the features. | 12-06-2012 |
20130037516 | IMPLANT SURFACE WITH INCREASED HYDROPHILICITY - A method of increasing the hydrophilicity of an implant to be implanted into living bone. The method comprises the act of depositing non-toxic salt residuals on the surface of the implant by exposing the surface to a solution including the non-toxic salts. The method further comprises the act of drying the implant. | 02-14-2013 |
20150129547 | LIQUID AND METHOD FOR REMOVING CSD COATED FILM, FERROELECTRIC THIN FILM AND METHOD FOR PRODUCING THE SAME - Coated film is removed at an outer peripheral edge of a substrate before heat-treating in CSD method by spraying or dropping liquid for removing CSD coated film including water and organic solvent mixed in a weight ratio of 50:50 to 0:100, in which the organic solvent is one or more selected from the group consisting of β-diketones, β-ketoesters, polyhydric alcohol, carboxylic acids, alkanolamines, α-hydroxy carboxylic acid, α-hydroxy carbonyl derivatives, and hydrazone derivatives. | 05-14-2015 |
20160045289 | Deposition of Discrete Nanoparticles on a Nanostructured Surface of an Implant - A method of forming an implant to be implanted into living bone is disclosed. The method comprises the act of roughening at least a portion of the implant surface to produce a microscale roughened surface. The method further comprises forming a nanoscale roughened surface on the microscale roughened surface. The method further comprises the act of depositing discrete nanoparticles on the nanoscale roughened surface though a one-step process of exposing the roughened surface to a solution including the nanoparticles. The nanoparticles comprise a material having a property that promotes osseointegration. | 02-18-2016 |
20160184059 | TITANIUM NANO-SCALE ETCHING ON AN IMPLANT SURFACE - A method of forming an implant to be implanted into living bone is disclosed. The method comprises the act of roughening at least a portion of the implant surface to produce a microscale roughened surface. The method further comprises the act of immersing the microscale roughened surface into a solution containing hydrogen peroxide and a basic solution to produce a nanoscale roughened surface consisting of nanopitting superimposed on the microscale roughened surface. The nanoscale roughened surface has a property that promotes osseointegration. | 06-30-2016 |
216109000 | Etchant contains fluoride ion | 5 |
20090008366 | ETCHING COMPOSITION AND METHOD FOR ETCHING A SUBSTRATE - This etching composition for etching hafnium compound, includes a fluoride compound and a chloride compound. This method for etching a substrate, includes etching a film which contains hafnium compound and is formed on a substrate by using an etching composition, wherein the etching composition contains a fluoride compound and a chloride compound. | 01-08-2009 |
20090032499 | Low Friction Coatings for Use in Dental and Medical Devices - The present invention provides an article, at least part of it being coated by inorganic fullerene-like (IF) nanoparticles or composite containing such nanoparticles. Preferably, the invention provides an article made of metal, for use in dentistry or medicine e.g. archwire, needle or catheter, having a friction-reducing film, and methods for coating such articles with a friction-reducing film. | 02-05-2009 |
20090212021 | COMPOSITIONS AND METHODS FOR SELECTIVE REMOVAL OF METAL OR METAL ALLOY AFTER METAL SILICIDE FORMATION - An aqueous metal etching composition useful for removal of metals such as nickel, cobalt, titanium, tungsten, and alloys thereof, after formation of metal silicides via rapid thermal annealing during complementary metal-oxide-semiconductor (CMOS) transistor fabrication. The aqueous metal etching composition is also useful for selective removal of metal silicides and/or metal nitrides for wafer re-work. In one formulation, the aqueous metal etching composition contains oxalic acid, and a chloride-containing compound, and in other formulations, the composition contains an oxidizer, such as hydrogen peroxide, and a fluoride source, e.g., borofluoric acid. The composition in another specific formulation contains borofluoric acid and boric acid for effective etching of nickel, cobalt, titanium, tungsten, metal alloys, metal silicides and metal nitrides, without attacking the dielectric and the substrate. | 08-27-2009 |
20100147803 | PROCESS FOR REMOVING METALLIC MATERIAL FROM CASTED SUBSTATES, AND RELATED COMPOSITIONS - A method for removing a metallic material from the surface of a casted substrate includes the step of contacting the metallic material with an aqueous composition which comprises an acid having the formula H | 06-17-2010 |
20150136738 | METHOD OF PROCESSING A BODY OF POLYCRYSTALLINE DIAMOND MATERIAL - A method of processing a polycrystalline diamond (PCD) material having a non-diamond phase comprising a diamond catalyst/solvent and/or one or more metal carbides, comprises leaching an amount of the diamond catalyst/solvent and/or one or more metal carbides from the PCD material by exposing at least a portion of the PCD material to a leaching solution. The leaching solution comprises nitric acid diluted in water, wherein the nitric acid is between around 2 to 5 wt % in the nitric acid and water mixture, and one or more additional mineral acids. | 05-21-2015 |