Class / Patent application number | Description | Number of patent applications / Date published |
205158000 | Coating a substrate predominantly comprised of nonconductive material to which conductive material or material which can be converted into conductive material has been added (e.g., nonconductive polymer substrate containing carbon or copper oxide particles, etc.) | 6 |
20110198229 | ELECTROPLATING APPARATUS BASED ON AN ARRAY OF ANODES - The present invention generally relates to apparatus and methods for plating conductive materials on a substrate. One embodiment of the present invention provides an apparatus for plating a conductive material on a substrate. The apparatus comprises a fluid basin configured to retain an electrolyte, a contact ring configured to support the substrate and contact the substrate electrically, and an anode assembly disposed in the fluid basin, wherein the anode assembly comprises a plurality of anode elements arranged in rows. | 08-18-2011 |
20120055801 | Gallium Electrodeposition Processes and Chemistries - Solutions and processes for electrodepositing gallium or gallium alloys includes a plating bath free of complexing agents including a gallium salt, an indium salt, a combination thereof, and a combination of any of the preceding salts with copper, an acid, and a solvent, wherein the pH of the solution is in a range selected from the group consisting of from about zero to about 2.6 and greater than about 12.6 to about 14. An optional metalloid may be included in the solution. | 03-08-2012 |
20120132532 | ALUMINUM-PLATED COMPONENTS OF SEMICONDUCTOR MATERIAL PROCESSING APPARATUSES AND METHODS OF MANUFACTURING THE COMPONENTS - Aluminum-plated components of semiconductor material processing apparatuses are disclosed. The components include a substrate and an optional intermediate layer formed on at least one surface of the substrate. The intermediate layer includes at least one surface. An aluminum plating is formed on the substrate, or on the optional intermediate layer. The surface on which the aluminum plating is formed is electrically-conductive. An anodized layer can optionally be formed on the aluminum plating. The aluminum plating or optional the anodized layer comprises a process-exposed surface of the component. Semiconductor material processing apparatuses including one or more aluminum-plated components, methods of processing substrates, and methods of making the aluminum-plated components are also disclosed. | 05-31-2012 |
20120193240 | Electrochemical Concentration of Lanthanide and Actinide Elements - A carbon paste electrode is modified with a chemical agent that is selective for a plurality of lanthanides and actinides (f-series) elements. The modified carbon paste electrode selectively has different voltages applied thereto where a first voltage is used to cause the deposition of one or more lanthanides or actinides from an industrial or environmental sample onto the electrode, and, subsequent to removal of the electrode from the sample and insertion into a second sample where concentration of lanthanides or actinides is preferred, a second voltage is used to cause the deposited lanthanides and/or actinides to be discharged from the electrode for concentration into the second sample. | 08-02-2012 |
20130001091 | ELECTROPLATING APPARATUS AND METHOD - Provided is an electroplating apparatus including: a water tank that is filled with a non-polar solvent having a higher specific gravity than an electrolyte in which an electrolyte layer is formed on top of the non-polar solvent; a copper electrode that is installed at a portion where the electrolyte layer of the water tank is positioned; an insulating substrate that is disposed to be inserted into and withdrawn from the water tank and on which seed electrodes are formed; an actuator that escalates the insulating substrate up and down; and a power supply that applies electric current between the copper electrode and each of the seed electrodes, to thereby uniformly form thickness of a metal thin film on a large substrate and guarantee grain size. | 01-03-2013 |
20130134045 | DYNAMIC CURRENT DISTRIBUTION CONTROL APPARATUS AND METHOD FOR WAFER ELECTROPLATING - Methods, systems, and apparatus for plating a metal onto a work piece are described. In one aspect, an apparatus includes a plating chamber, a substrate holder, an anode chamber housing an anode, and an ionically resistive ionically permeable element positioned between a substrate and the anode chamber during electroplating. The anode chamber may be movable with respect to the ionically resistive ionically permeable element to vary a distance between the anode chamber and the ionically resistive ionically permeable element during electroplating. The anode chamber may include an insulating shield oriented between the anode and the ionically resistive ionically permeable element, with opening in a central region of the insulating shield. | 05-30-2013 |