Class / Patent application number | Description | Number of patent applications / Date published |
204298030 | Measuring, analyzing or testing | 27 |
20090134018 | Ionization vacuum device - An ionization vacuum device measures a pressure in a vacuum vessel, and has: an anode provided inside the vacuum vessel; a cathode provided inside the vacuum vessel; a power source for discharge that supplies electric power for discharge between the anode and the cathode; a power source for cathode-heating that supplies power for heating to the cathode, means for forming a magnetic field in a space between the anode and the cathode; control means for controlling so as to heat said cathode by said power source for cathode-heating while discharge of gas inside said vacuum vessel is caused, and so as to maintain the temperature of said cathode within a temperature range where thermonic electrons are not emitted from said cathode. | 05-28-2009 |
20090145751 | WRITING APPARATUS AND WRITING DATA CONVERSION METHOD - A writing apparatus includes a storage unit configured to store writing data, an acquiring unit configured to acquire information on a pattern defined based on the writing data, a selecting unit configured to select a format of a plurality of formats having different number of bits to be used, based on acquired information on the pattern, for each predetermined region, a converting unit configured to convert data in the predetermined region defined by the writing data, by using a selected format, and a writing unit configured to write a predetermined pattern on a target workpiece, based on converted data in the predetermined region. | 06-11-2009 |
20090159439 | Apparatus for wafer level arc detection at an RF bias impedance match to the pedestal electrode - Wafer level arc detection is provided in a plasma reactor using an RF transient sensor coupled to a threshold comparator, and a system controller responsive to the threshold comparator. | 06-25-2009 |
20090288948 | PHYSICAL VAPOR DEPOSITION APPARATUS - A physical vapor deposition apparatus includes a vacuum chamber, a particles producing means, a substrate stand, a correction plate, and an ion source disposed in the vacuum chamber. The physical vapor deposition apparatus further includes a strain gauge adhered on the correction plate for detecting deforming of the correction plate, a controlling circuit electrically coupled to the strain gauge, and an alarm electrically connected to the controlling circuit. The controlling circuit is configured for controlling the alarm to produce an alert signal when the deforming of the correction plate exceeds a predetermined degree. | 11-26-2009 |
20100126852 | ROTARY MAGNET SPUTTERING APPARATUS - In a rotary magnet sputtering apparatus, a target consumption displacement quantity is measured, and corresponding to the measurement results, a distance between a rotating magnet group and a target is adjusted, and uniform film forming rate is achieved over a long period of time so as to reduce the change of a target surface due to consumption of the target and to reduce the change of the film forming rate with time. An ultrasonic sensor or a laser transmitting/receiving device may be used as a means for measuring the consumption displacement quantity of the target. | 05-27-2010 |
20100140083 | Dual Magnetron Sputtering Power Supply And Magnetron Sputtering Apparatus - A dual magnetron sputtering power supply for use with a magnetron sputtering apparatus having at least first and second sputtering cathodes for operation in the dual magnetron sputtering mode, there being a means for supplying a flow of reactive gas to each of said first ( | 06-10-2010 |
20100243435 | Sputtering Target for Magnetic Recording Film and Method for Manufacturing the Same - Provided is a sputtering target for a magnetic recording film, in which film formation efficiency and film characteristics can be improved by suppressing growth of crystal grains, reducing magnetic permeability, and increasing density. A method for manufacturing such a sputtering target is also provided. The sputtering target is composed of a matrix phase which includes Co and Pt and a metal oxide phase for example. The sputtering target has a magnetic permeability in the range of 6 to 15 and a relative density of 90% or more. | 09-30-2010 |
20100314246 | SPUTTER-COATING APPARATUS HAVING HEATING UNIT - A sputter-coating apparatus includes a vacuum housing, a substrate holder and a target holder positioned in the vacuum housing and facing each other, a temperature sensing unit, a heating unit, and a control unit. The substrate holder is configured for supporting a plurality of substrates to be coated and includes a central portion and a peripheral portion surrounding the central portion. The target holder is configured for mounting target material. The temperature sensing unit is configured for detecting a temperature of the central portion and a temperature of the peripheral portion. The control unit is configured for comparing the temperature of the central portion and the temperature of the peripheral portion and controlling the heating unit to heat the peripheral portion if the temperature of the central portion is greater than the temperature of the peripheral portion. | 12-16-2010 |
20110120858 | VACUUM PROCESSING APPARATUS AND OPTICAL COMPONENT MANUFACTURING METHOD - To uniformly perform processing such as deposition on a processing object such as a large, heavy substrate for optics, the large, heavy substrate for optics is accurately, reliably attached to a holder. A vacuum processing apparatus which processes a processing object in a vacuum vessel includes a susceptor which has a surface having concavity and convexity, that is opposite to its surface on which the processing object is mounted, and movably holds the processing object, a holder which has a surface having concavity and convexity which mesh with those of the susceptor, a driving mechanism which holds the holder to be movable to a first state or a second state, and a control means for moving the susceptor while the holder is held in the first state to mesh the surface, having the concavity and convexity, of the susceptor with the surface, having the concavity and convexity, of the holder and thereby connect the susceptor and the holder to each other, moving the holder, to which the susceptor is connected, to the second state and processing the processing object, and moving the holder to the first state again and moving the susceptor so that the surface, having the concavity and convexity, of the susceptor is separated from the surface, having the concavity and convexity, of the holder. | 05-26-2011 |
20110168552 | SYSTEM FOR SPUTTERING DEPOSITION - An exemplary system for sputtering deposition includes a sputtering chamber and a gas supplying system. The sputtering chamber includes a first sputtering space and a second sputtering space isolated from the first sputtering space. Each of the first and second sputtering spaces is configured for receiving a target and a substrate therein. The gas supplying system includes a reactive gas source, an inert gas source, a first chamber in communication with the reactive gas source and the inert gas source, and a second chamber in communication with the inert gas source. Both the first and second chambers are in communication with the first and second sputtering spaces through valves. | 07-14-2011 |
20120103800 | Homing of arbitrary scan path of a rotating magnetron - A control system and method for controlling two motors determining the azimuthal and circumferential position of a magnetron rotating about the central axis of the sputter chamber in back of its target sputtering and capable of a nearly arbitrary scan path, e.g., with a planetary gear mechanism. A system controller periodically sends commands to the motion controller which closely controls the motors. Each command includes a command ticket, which may be one of several values. The motion controller accepts only commands having a command ticket of a different value from the immediately preceding command. One command selects a scan profile stored in the motion controller, which calculates motor signals from the selected profile. Another command instructs a dynamic homing command which interrogates sensors of the position of two rotating arms to determine if the arms in the expected positions. If not, the arms are rehomed. | 05-03-2012 |
20130001075 | SPUTTERING APPARATUS AND SPUTTERING METHOD - A sputtering apparatus includes: a vacuum chamber in which a target is to be disposed; a power supply to input power to the target; gas introduction device; exhaust device; and substrate holding device to hold a substrate to be processed. The substrate holding device includes: a chuck main body having positive and negative electrodes; a chuck plate having a rib portion capable of bringing a peripheral edge portion of the substrate into surface contact with the rib portion; and a multiplicity of supporting portions provided upright and arranged at predetermined intervals in an interior space surrounded by the rib portion; and a DC power supply to apply a direct voltage between the two electrodes. The sputtering apparatus suppresses a variation in film thickness among substrates. | 01-03-2013 |
20130081942 | Thin Film Formation Method and Thin Film Formation Apparatus - A thin film formation method is provided, by which needless film formation due to trial film formation is omitted and film formation efficiency can be improved. This invention is a method for sputtering targets to form a film A having an intended film thickness of T | 04-04-2013 |
20130220802 | RF SUBSTRATE BIAS WITH HIGH POWER IMPULSE MAGNETRON SPUTTERING (HIPIMS) - An apparatus for generating sputtering of a target to produce a coating on a substrate is provided. The apparatus comprises a magnetron including a cathode and an anode. A power supply is operably connected to the magnetron and at least one capacitor is operably connected to the power supply. A first switch is also provided. The first switch operably connects the power supply to the magnetron to charge the magnetron and the first switch is configured to charge the magnetron according to a first pulse. An electrical bias device is operably connected to the substrate and configured to apply a substrate bias. | 08-29-2013 |
20130277213 | SPUTTERING APPARATUS - The present invention provides a means capable of determining the surface state of the target to execute accurate and quick cleaning of necessary part. The means includes: a magnet unit capable of forming a magnetic field on the surface of a target; a rotary system capable of driving the magnet unit of change the magnetic field pattern; and an ammeter configured to measure target current when the magnetic field is formed by the magnet unit and discharge voltage is applied to a target electrode to which the target is attached. The position of the magnet unit is variously changed by the rotary system, and the target current is measured at each position and compared with a reference value. It is then determined whether cleaning is necessary at each position, so that cleaning can be performed only for necessary part. | 10-24-2013 |
20130284593 | ION SOURCE, ION BEAM PROCESSING/OBSERVATION APPARATUS, CHARGED PARTICLE BEAM APPARATUS, AND METHOD FOR OBSERVING CROSS SECTION OF SAMPLE - An ion beam machining and observation method relevant to a technique of cross sectional observation of an electronic component, through which a sample is machined by using an ion beam and a charged particle beam processor capable of reducing the time it takes to fill up a processed hole with a high degree of flatness at the filled area. The observation device is capable of switching the kind of gas ion beam used for machining a sample with the kind of a gas ion beam used for observing the sample. To implement the switch between the kind of a gas ion beam used for sample machining and the kind of a gas ion beam used for sample observation, at least two gas introduction systems are used, each system having a gas cylinder, a gas tube, a gas volume control valve, and a stop valve. | 10-31-2013 |
20140102888 | METHOD AND APPARATUS TO PRODUCE HIGH DENSITY OVERCOATS - A deposition system is provided, where conductive targets of similar composition are situated opposing each other. The system is aligned parallel with a substrate, which is located outside the resulting plasma that is largely confined between the two cathodes. A “plasma cage” is formed wherein the carbon atoms collide with accelerating electrons and get highly ionized. The electrons are trapped inside the plasma cage, while the ionized carbon atoms are deposited on the surface of the substrate. Since the electrons are confined to the plasma cage, no substrate damage or heating occurs. Additionally, argon atoms, which are used to ignite and sustain the plasma and to sputter carbon atoms from the target, do not reach the substrate, so as to avoid damaging the substrate. | 04-17-2014 |
20140246310 | SPUTTERING APPARATUS - A magnetron assembly for a rotary target cathode comprises a rigid support structure, a magnet bar structure movably attached to the rigid support structure, and at least one actuation mechanism coupled to the rigid support structure and configured to change a distance of the magnet bar structure from a surface of a rotatable target cylinder. The magnetron assembly also includes a position indicating mechanism operative to measure a position of the magnet bar structure relative to the surface of the rotatable target cylinder. A communications device is configured to receive command signals from outside of the magnetron assembly and transmit information signals to outside of the magnetron assembly. | 09-04-2014 |
20150021172 | THIN FILM FORMING APPARATUS - A thin film forming apparatus includes: a gas supply device for supplying a gas for film deposition configured to include a plurality of gas supply sections arranged side by side in a width direction of a film substrate in a vacuum chamber, and a supply amount adjustment section for adjusting the supply amount of the gas for each of the gas supply sections; and a gas partial pressure measurement device for measuring partial pressure of each kind of gas in the vacuum chamber configured to include measurement sections disposed so as to correspond to a position where each of the gas supply sections is disposed in the width direction of the film substrate, and measure the partial pressure of the gas at a position where each of the measurement sections is disposed. | 01-22-2015 |
20150047974 | PLASMA PROCESSING APPARATUS AND HIGH FREQUENCY GENERATOR - A plasma processing apparatus ( | 02-19-2015 |
20150053553 | PLASMA PROCESSING APPARATUS - The antenna has a structure that the high frequency electrode is received in a dielectric case. The high frequency electrode has a go-and-return conductor structure that two electrode conductors are disposed close to and in parallel to each other with a gap therebetween to form a rectangular plate shape as a whole, and the two electrode conductors are connected by a conductor at an end in the longitudinal direction. A high frequency current flows in the two electrode conductors in opposite directions. A plurality of openings are formed on edges of the two electrode conductors on the side of the gap, and the openings are dispersed and arranged in the longitudinal direction of the high frequency electrode. The antenna is disposed in a vacuum container in a direction that a main surface of the high frequency electrode and a surface of the substrate are substantially perpendicular to each other. | 02-26-2015 |
20150303041 | METHOD AND SYSTEM FOR MAINTAINING AN EDGE EXCLUSION SHIELD - A method for extracting a shielding element from a processing chamber of a substrate processing system or inserting the shielding element into the processing chamber is provided. The substrate processing system includes the processing chamber, a first shielding element for excluding application of material onto parts of a substrate, and a substrate transportation system for transporting substrates or substrate carriers into and out of the processing chamber. The method includes transporting the first shielding element by the substrate transportation system. | 10-22-2015 |
20160024645 | Ion Beam Sample Preparation and Coating Apparatus and Methods - Disclosed are embodiments of an ion beam sample preparation and coating apparatus and methods. A sample may be prepared in one or more ion beams and then a coating may be sputtered onto the prepared sample within the same apparatus. A vacuum transfer device may be used with the apparatus in order to transfer a sample into and out of the apparatus while in a controlled environment. Various methods to improve preparation and coating uniformity are disclosed including: rotating the sample retention stage; modulating the sample retention stage; variable tilt ion beam irradiating means, more than one ion beam irradiating means, coating thickness monitoring, selective shielding of the sample, and modulating the coating donor holder. | 01-28-2016 |
20160042928 | SPUTTERING APPARATUS - A sputtering apparatus includes a vacuum chamber, a substrate holder, a target support member, a cathode magnet arranged on a side of the target support member, which is opposite to a side of a substrate held by the substrate holder, a magnet moving unit configured to adjust a distance between the cathode magnet and the target support member, a target moving unit configured to adjust a distance between the target support member and the substrate, and a control unit configured to control the target moving unit and the magnet moving unit. | 02-11-2016 |
20160056026 | PROCESSING APPARATUS - The present invention provides a processing apparatus including a vacuum vessel, a plurality of electrodes arranged in the vacuum vessel, a plurality of power supplies configured to apply potentials to the plurality of electrodes, a detector configured to detect a potential in a process space between a substrate transferred into the vacuum vessel and each of the plurality of electrodes, and a controller configured to control phases of the potentials to be applied to the plurality of electrodes by the plurality of power supplies based on the potential detected by the detector. | 02-25-2016 |
20160079045 | SPUTTERING APPARATUS, FILM DEPOSITION METHOD, AND CONTROL DEVICE - A sputtering apparatus according to one embodiment of the present invention includes a substrate holder, a cathode unit arranged at a position diagonally opposite to the substrate holder, a position sensor for detecting a rotational position of the substrate, and a holder rotation controller for adjusting a rotation speed of the substrate according to the detected rotational position. The holder rotation controller controls the rotation speed so that the rotation speed of the substrate when the cathode unit is located on a side in a first direction as an extending direction of a process target surface of the relief structure is lower than the rotation speed of the substrate when the cathode unit is located on a side in a second direction which is perpendicular to the first direction along the rotation of the substrate. | 03-17-2016 |
20160111249 | Methods and Apparatus for Determining, Using, and Indicating Ion Beam Working Properties - Disclosed are embodiments of an ion beam sample preparation and coating apparatus and methods. A sample may be prepared in one or more ion beams and then a coating may be sputtered onto the prepared sample within the same apparatus. A vacuum transfer device may be used with the apparatus in order to transfer a sample into and out of the apparatus while in a controlled environment. Various methods to improve preparation and coating uniformity are disclosed including: rotating the sample retention stage; modulating the sample retention stage; variable tilt ion beam irradiating means, more than one ion beam irradiating means, coating thickness monitoring, selective shielding of the sample, and modulating the coating donor holder. | 04-21-2016 |