Class / Patent application number | Description | Number of patent applications / Date published |
156345400 | With means to direct electron beam or ion beam to a gas to energize the gas | 8 |
20110030896 | PLASMA TREATING APPARATUS AND PLASMA TREATING METHOD - There are proposed a plasma treating apparatus and a plasma treating method using the same capable of improving the durability of site, member and parts in a chamber used for plasma etching in a corrosive gas atmosphere, which are exposed to the plasma atmosphere, and improving the resistance to plasma erosion of a coating formed on the surface of the member or the like in the corrosive gas atmosphere and preventing the occurrence of particles of a corrosion product even under a high plasma power. As a means therefore, in a plasma treating apparatus wherein a surface of a body to be treated in a chamber is subjected to a plasma treatment with an etching gas, at least surfaces of sites of the chamber itself exposing to the plasma atmosphere, or surfaces of a member or parts accommodated in the chamber are covered with a composite layer including a porous layer made from a metal oxide and a secondary recrystallized layer of the metal oxide formed on the porous layer. | 02-10-2011 |
20110277932 | ELECTROSTATIC CHUCK CLEANING DURING SEMICONDUCTOR SUBSTRATE PROCESSING - Methods and apparatus for cleaning electrostatic chucks in processing chambers are provided. The process comprises flowing a backside gas comprising a reactive agent into a zone in a process chamber, the zone defined by a space between a surface of an electrostatic chuck or of a cleaning station and a surface of a substrate. The surface of the electrostatic chuck is etched with the reactive agent to remove debris. An apparatus for cleaning an electrostatic chuck is also provided, the apparatus comprising: a process chamber; an elongate arm having a reach disposed through a wall of the process chamber; an electrostatic chuck attached to the elongate arm; a cleaning station located within the reach of the elongate arm; and a reactive gas source that is operatively connected to the cleaning station. | 11-17-2011 |
20130098551 | ELECTRON BEAM PLASMA SOURCE WITH ARRAYED PLASMA SOURCES FOR UNIFORM PLASMA GENERATION - A plasma reactor that generates plasma in workpiece processing chamber by a electron beam, has an electron beam source chamber and an array of plasma sources facing the electron beam source chamber for affecting plasma electron density in different portions of the processing chamber. In another embodiment, an array of separately controlled electron beam source chambers is provided. | 04-25-2013 |
20130098552 | E-BEAM PLASMA SOURCE WITH PROFILED E-BEAM EXTRACTION GRID FOR UNIFORM PLASMA GENERATION - A plasma, reactor that relies on an electron beam as a plasma source employs a profiled electron beam extraction grid in an electron beam source to improve uniformity. | 04-25-2013 |
20130098553 | ELECTRON BEAM PLASMA SOURCE WITH PROFILED CHAMBER WALL FOR UNIFORM PLASMA GENERATION - A plasma reactor that generates plasma in a workplace processing chamber by an electron beam, has an electron beam source chamber with a wall opposite to the electron beam propagation direction, the wall being profiled to compensate for a non-uniformity in electron beam density distribution. | 04-25-2013 |
20150129130 | SYSTEMS TO IMPROVE FRONT-SIDE PROCESS UNIFORMITY BY BACK-SIDE METALLIZATION - Systems to improve front-side process uniformity by back-side metallization are disclosed. In some implementations, a back-side process system deposits a metal layer on the back-side of a wafer prior to performing a plasma-based process on the front side of the wafer. Presence of the back-side metal layer reduces variations in, for example, thickness of a deposited and/or etched layer resulting from the plasma-based process. | 05-14-2015 |
20150294885 | GAS INJECTION SYSTEM WITH PRECURSOR FOR PLANAR DEPROCESSING OF SEMICONDUCTOR DEVICES USING A FOCUSED ION BEAM - A method and system for improved planar deprocessing of semiconductor devices using a focused ion beam system. The method comprises defining a target area to be removed, the target area including at least a portion of a mixed copper and dielectric layer of a semiconductor device; directing a precursor gas toward the target area; and directing a focused ion beam toward the target area in the presence of the precursor gas, thereby removing at least a portion of a first mixed copper and dielectric layer and producing a uniformly smooth floor in the milled target area. The precursor gas causes the focused ion beam to mill the copper at substantially the same rate as the dielectric. In a preferred embodiment, the precursor gas comprises methyl nitroacetate. In alternative embodiments, the precursor gas is methyl acetate, ethyl acetate, ethyl nitroacetate, propyl acetate, propyl nitroacetate, nitro ethyl acetate, methyl methoxyacetate, or methoxy acetylchloride. | 10-15-2015 |
20150307986 | WAFER STAGE FOR SYMMETRIC WAFER PROCESSING - A planetary arm coupled to a tilt actuator moves a wafer in oscillatory motion along an arcuate path to expose a surface of the wafer to an incident ion beam for deposition and/or etching processing of thin film structures on the surface of the wafer. A wafer holder on an end of the planetary arm may be driven in rotation while the planetary arm executes oscillatory motion at a selected tilt angle relative to an incident ion beam. A slit support plate provides controllable exposure of the wafer to the incident beam. Embodiments are suitable for use in wafer deposition machines and/or wafer etching machines. | 10-29-2015 |