Class / Patent application number | Description | Number of patent applications / Date published |
156345120 | With mechanical polishing (i.e., CMP-chemical mechanical polishing) | 49 |
20090242125 | Carrier Head Membrane - A method and apparatus for planarizing a substrate are provided. A substrate carrier head with an improved cover for holding the substrate securely is provided. The cover may have a bead that is larger than the recess into which it fits, such that the compression forms a conformal seal inside the recess. The bead may also be left uncoated to enhance adhesion of the bead to the surface of the groove. The surface of the cover may be roughened to reduce adhesion of the substrate to the cover without using a non-stick coating. | 10-01-2009 |
20100024979 | METHOD OF MANUFACTURING IMAGE SENSOR - Embodiments relate to a method of manufacturing an image sensor which includes forming a plurality of lower layers over a semiconductor substrate. A first passivation layer may be formed over the lower layers to protect the lower layers. The first passivation layer may be formed in a pixel region and a peripheral region with different thicknesses. A spin-on-glass (SOG) layer may be formed over the first passivation layer. A second passivation layer may be formed over the SOG layer. Array etching may be used to form a concave area in the semiconductor substrate. A plurality of micro lenses may be formed over the bottom surface of the concave area. | 02-04-2010 |
20100147463 | CATALYST-AIDED CHEMICAL PROCESSING METHOD AND APPARATUS - A catalyst-aided chemical processing method can process hard-to-process materials, especially SiC, GaN, etc. whose importance as electronic device materials is increasing these days, with high processing efficiency and high precision even for a space wavelength range of not less than several tens of μm. The catalyst-aided chemical processing method comprises: putting a workpiece in a processing liquid in which halogen-containing molecules are dissolved; and moving the workpiece and a catalyst composed of molybdenum or a molybdenum compound relative to each other while keeping the catalyst in contact with or close proximity to a surface to be processed of the workpiece, thereby processing the surface of the workpiece. | 06-17-2010 |
20120241087 | CATALYST-AIDED CHEMICAL PROCESSING METHOD - A catalyst-aided chemical processing method is a novel processing method having a high processing efficiency and suited for processing in a space wavelength range of not less than several tens of μm. The catalyst-aided chemical processing method comprises: immersing a workpiece in a processing solution in which a halogen-containing molecule is dissolved, said workpiece normally being insoluble in said processing solution; and bringing a platinum, gold or ceramic solid catalyst close to or into contact with a processing surface of the workpiece, thereby processing the workpiece through dissolution in the processing solution of a halogenide produced by chemical reaction between a halogen radical generated at the surface of the catalyst and a surface atom of the workpiece. | 09-27-2012 |
20130199726 | APPARATUS AND A METHOD FOR TREATING A SUBSTRATE - A substrate treating method may include jetting a fluid containing an abrasive onto a substrate, and polishing the substrate using the jetted fluid. | 08-08-2013 |
20140053980 | SYSTEM AND METHOD FOR OPERATING CHEMICAL MECHANICAL POLISHING PROCESS - A chemical mechanical polishing (CMP) chamber is disclosed. The CMP chamber includes a chamber body, a door mounted on the chamber body and a chamber substructure being one selected from a group consisting of a moisture separator separating a moisture generated in the CMP chamber, a supplementary exhaust port, a transparent window mounted on the door, a sampling port mounted on the door, a sealing material including a metal frame, an o-ring for sealing the door and a combination thereof. | 02-27-2014 |
20140110058 | POLISHING PAD, POLISHING APPARATUS, AND METHOD FOR MAKING THE POLISHING PAD - The present invention relates to a polishing pad comprising a polishing surface. The polishing surface comprises a first polishing area and a second polishing area. The first polishing area comprises a plurality of first foaming holes, and the second polishing area comprises a plurality of second foaming holes, and an average pore diameter of the first foaming holes is less than an average pore diameter of the second foaming holes. The polishing pad according to the present invention uses the polishing areas with the different pore diameters of the holes to avoid unevenly removing the edge and central part of a substrate when polishing, so that a thickness of the substrate becomes uniform. | 04-24-2014 |
20140150974 | THREE-ZONE CARRIER HEAD AND FLEXIBLE MEMBRANE - A flexible membrane for a carrier head of a chemical mechanical polisher includes a main portion, an annular outer portion, and three annular flaps. The main portion has a substrate mounting surface with a radius R. The annular outer portion extends upwardly from an outer edge of the main portion and has a lower edge connected to the main portion and an upper edge. The three annular flaps include a first annular flap joined to an inner surface of the main portion at a radial position between 75% and 95% of R, a second inwardly-extending annular flap joined to the annular outer portion at a position between the lower edge and the upper edge, and a third inwardly-extending annular flap joined to the upper edge of the annular outer portion. | 06-05-2014 |
20140190633 | SUBSTRATE CLEANING APPARATUS AND POLISHING APPARATUS - A substrate cleaning apparatus capable of efficiently cleaning a substrate, such as a wafer, is provided. The substrate cleaning apparatus includes: a substrate holder for holding and rotating a substrate; a chemical liquid nozzle for supplying a chemical liquid onto the substrate; a two-fluid nozzle for supplying a two-fluid jet onto the substrate; and a moving mechanism for moving the chemical liquid nozzle and the two-fluid nozzle together from a center to a periphery of the substrate. The chemical liquid nozzle and the two-fluid nozzle are adjacent to each other with a predetermined distance therebetween, and the chemical liquid nozzle is located forward of the two-fluid nozzle with respect to a movement direction of the chemical liquid nozzle and the two-fluid nozzle. | 07-10-2014 |
20150068680 | POLISHING METHOD, POLISHING APPARATUS AND POLISHING TOOL - A polishing method and a polishing apparatus finish a surface of a substrate of a compound semiconductor containing an element such as Ga or the like to a desired level of flatness, so that the surface can be flattened with high surface accuracy within a practical processing time. In the presence of water, such as weak acid water, water with air dissolved therein, or electrolytic ion water, the surface of the substrate made of a compound semiconductor containing either one of Ga, Al, and In and a surface of a polishing pad having an electrically conductive member in an area of the surface which is held in contact with the substrate) are relatively moved while being held in contact with each other, thereby polishing the surface of the substrate. | 03-12-2015 |
20150314418 | SUBSTRATE POLISHING APPARATUS - A substrate polishing apparatus includes a polishing table 30 having a polishing surface 10 in the upper surface, a substrate holding portion 31 that holds a substrate W having a surface to be polished in the lower surface, and a holding portion cover 36 that covers the outer side of the substrate holding portion 31. Between the lower portion of the holding portion cover 36 and the upper surface of the polishing table 30, a gap portion for intake 37 is provided, and in the upper portion of the holding portion cover 36, a pipe for exhaust 39 connected to an exhaust mechanism 38 is provided. By operating the exhaust mechanism 38, a rising air current from the gap portion 37 toward the pipe 39 is formed between the outer surface of the substrate holding portion 31 and the inner surface of the holding portion cover 36. | 11-05-2015 |
20150357212 | PLANARIZATION METHOD AND PLANARIZATION APPARATUS - According to one embodiment, a planarization method and a planarization apparatus are provided. In the planarization method, a work surface of a work piece is planarized by bringing the work surface of the work piece containing a silicon oxide film and a surface of a solid plate onto which hydrogen ions are adsorbed, into contact or extremely close proximity with one another in a state in which a process liquid containing fluorine ions is supplied to the surface of the solid plate. | 12-10-2015 |
20150371870 | DIE LEVEL CHEMICAL MECHANICAL POLISHING - A method of polishing a wafer at the die level with a targeted slurry delivery system. The wafer is placed on a wafer carrier exposing the top side of the wafer, the wafer contains a die. The polishing apparatus will polish a portion of the die using a pad that is smaller than the die and the pad is located above the die. A slurry is applied to a portion of the die being polished. Embodiments of the invention provide multiple pads working on the same die. | 12-24-2015 |
20160016281 | POLISHING PAD CONFIGURATION AND POLISHING PAD SUPPORT - Chemical mechanical polishing can be used for “touch-up polishing” in which polishing is performed on a limited area of the front surface of the substrate. The contact area between the polishing pad and the substrate can be substantially smaller than the radius surface of the substrate. During polishing, the polishing pad can undergo an orbital motion. The polishing pad can be maintained in a fixed angular orientation during the orbital motion. The contact area can be arc-shaped. The contact area can be provided by one or more lower portions projecting downward from an upper portion of the polishing pad. A perimeter portion of the polishing pad can be vertically fixed to an annular member and a remainder of the polishing pad within the perimeter portion can be vertically free. | 01-21-2016 |
20160016282 | POLISHING PAD CONFIGURATION AND CHEMICAL MECHANICAL POLISHING SYSTEM - A polishing pad includes and upper portion and one or more lower portions. The upper portion has an upper surface for attachment to a pad carrier and a first lateral dimension. The one or more lower portions project downward from the upper portion. A bottom surface of the one or more lower portions provide a contact surface to contact a substrate during chemical mechanical polishing. Each lower portion has a second lateral dimension that is less than the first lateral dimension. A total surface area of the contact surface from the one or more lower portions is no more than 10% of a surface area of the upper surface. | 01-21-2016 |
20160079084 | Composition and Method Used for Chemical Mechanical Planarization of Metals - Compositions for use in CMP processing and methods of CMP processing. The composition utilizes low levels of particulate material, in combination with at least one amino acid, at least one oxidizer, and water to remove a metal layer such as one containing copper to a stop layer with high selectivity. | 03-17-2016 |
20160101500 | CHEMICAL MECHANICAL POLISHING PAD WITH INTERNAL CHANNELS - A polishing pad for chemical mechanical polishing is provided. The polishing pad includes a base region having a supporting surface. The polishing pad further includes a plurality of polishing features forming a polishing surface, the polishing surface opposing the supporting surface. The polishing pad further includes one or more channels formed in an interior region of the polishing pad and extending at least partly around a center of the polishing pad, wherein each channel is fluidly coupled to at least one port. | 04-14-2016 |
20160144478 | APPARATUS FOR CLEANING A POLISHING SURFACE, POLISHING APPARATUS, AND METHOD OF MANUFACTURING AN APPARATUS FOR CLEANING A POLISHING SURFACE - There is disclosed a polishing-surface cleaning apparatus to which a polishing liquid, such as slurry, is less likely to be attached. The polishing-surface cleaning apparatus includes an arm having a fluid passage, a nozzle communicating with the fluid passage, and a weld material securing the nozzle to the arm. The weld material fills a gap between a bottom surface of the arm and an edge of a front-end surface of the nozzle. | 05-26-2016 |
20160158912 | CHEMICAL MECHANICAL POLISHING METHOD AND APPARATUS - An apparatus for polishing a semiconductor wafer using a pad resurfacing arm and an apparatus therefor are disclosed. Embodiments may include providing a semiconductor wafer on a chemical mechanical polishing (CMP) tool, the CMP tool including a polish pad and a pad resurfacing arm which includes a pad cleaning part, a pad conditioning part, and a slurry dispensing part, dispensing a slurry to the polish pad utilizing the pad resurfacing arm, and polishing the semiconductor wafer utilizing the polish pad. | 06-09-2016 |
20160379838 | PROCESSING APPARATUS AND PROCESSING METHOD - A processing apparatus includes a rotary table that causes a workpiece to rotate around a rotary axis, a roller-shaped member that rotates on an axis orthogonal to the rotary axis of the rotary table, a vertical driving section that is driven in a direction of the rotary axis of the rotary table so as to bring the roller-shaped member and the workpiece into contact with each other, an ultraviolet ray irradiation source that irradiates a portion between the roller-shaped member and the workpiece with an ultraviolet ray, a polishing material that is supplied to the portion between the roller-shaped member and the workpiece, and a light scattering medium that is supplied to the portion between the roller-shaped member and the workpiece and scatters an ultraviolet ray from the ultraviolet ray irradiation source. | 12-29-2016 |
156345130 | With measuring, sensing, detection or process control means | 16 |
20120227903 | Automatic Gain Control - Methods and apparatus for automatic gain control. A film on a substrate is polished by a chemical mechanical polisher that includes a polishing pad and an in-situ monitoring system. The polishing pad includes a first portion, and the in-situ monitoring system includes a light source and a light detector. The light source emits light, and light emitted from the light source is directed through the first portion and to a surface of the film being polished. Light reflecting from the surface of the film being polished and passing through the first portion is received at the light detector. An electronic signal is generated based on the light received at the light detector. When the electronic signal is evaluated not to satisfy one or more constraints, a gain for the light detector is adjusted so that the electronic signal would satisfy the one or more constraints. | 09-13-2012 |
20130000845 | Device and Method for Measuring Thickness of Slurry and Chemical Mechanical Polishing Apparatus Comprising the Device - A device for measuring a thickness of a slurry used in a chemical mechanical polishing apparatus and a method using the same are provided. The chemical mechanical polishing apparatus comprises a polishing head ( | 01-03-2013 |
20130146224 | ADAPATIVE ENDPOINT METHOD FOR PAD LIFE EFFECT ON CHEMICAL MECHANICAL POLISHING - The present disclosure provides a chemical mechanical polishing (CMP) system. The CMP system includes a pad designed for wafer polishing, a motor driver coupled with the pad and designed to drive the pad during the wafer polishing, and a controller coupled with the motor driver and designed to control the motor driver. The CMP system further includes an in-situ rate monitor designed to collect polishing data from a wafer on the pad, determine CMP endpoint based on a life stage of the pad, and provide the CMP endpoint to the controller. | 06-13-2013 |
20140000808 | CMP TOOL IMPLEMENTING CYCLIC SELF-LIMITING CM PROCESS | 01-02-2014 |
20140020829 | Sensors in Carrier Head of a CMP System - Sensors can be located in a carrier head for a chemical mechanical polishing system. In some implementations the carrier head includes a flexible membrane, and a thermocouple is positioned on the lower surface of the flexible membrane or embedded in the flexible membrane adjacent the lower surface. In some implementations, the carrier head optical sensor is secured to the head and positioned to sense a reflectivity of a spot on a back surface of a substrate held in the carrier head, and a controller is configured to receive a signal from the optical sensor and determine precession of the substrate based on the signal. | 01-23-2014 |
20140020830 | Carrier Head Sweep Motor Current for In-Situ Monitoring - A chemical mechanical polishing system includes a platen to support a polishing pad, two carrier heads configured to hold two substrates against the polishing pad at the same time, two actuators to sweep the two carrier heads laterally across the polishing pad, an in-situ polishing monitoring system including a two current sensors to sense two currents supplied to the two actuators and generate two signals, and a controller to receive the two signals and independently detect a two endpoints for the two substrates based on the two signals. | 01-23-2014 |
20140174655 | POLISHING TOOL WITH DIAPHRAM FOR UNIFORM POLISHING OF A WAFER - A chemical mechanical polishing to that can provide uniform polishing across a wafer even when polishing hard wafers such as AlTiC wafers used in the formation of magnetic recording sliders. The chemical mechanical polishing to has a wafer carrier that includes a diaphragm or bladder that is configured such that an inner portion of the bladder can be pneumatically pressurized so as to bow outward, while outer portions remain unpressurized. | 06-26-2014 |
20140238605 | FILM THICKNESS MONITORING METHOD, FILM THICKNESS MONITORING DEVICE, AND SEMICONDUCTOR MANUFACTURING APPARATUS - In accordance with an embodiment, a film thickness monitoring method includes applying light to a laminated body, detecting reflected light from the laminated body and outputting signals corresponding to the detected light, and judging whether a film thickness of an opaque film which is a polishing target has reached a desired film thickness. The laminated body includes a transparent film and the opaque film on the transparent film. A comparison value between the signal before polishing the opaque film and the signal after starting the polishing is obtained at predetermined time intervals, and whether the film thickness of the opaque film has reached the desired film thickness is judged based on a relationship between the comparison value of the signals and a predetermined threshold value. | 08-28-2014 |
20140262027 | APPARATUS FOR MEASURING SURFACE PROPERTIES OF POLISHING PAD - The present invention relates to an apparatus for measuring surface properties of a polishing pad which measures surface properties such as surface topography or surface condition of a polishing pad used for polishing a substrate such as a semiconductor wafer. The apparatus for measuring surface properties of a polishing pad includes a laser beam source configured to emit a laser beam, and a photodetector configured to detect scattered light that is reflected and scattered by the polishing pad, an optical Fourier transform being performed on the detected scattered light to produce an intensity distribution corresponding to a spatial wavelength spectrum based on surface topography of the polishing pad. The laser beam is applied to the polishing pad at such an incident angle that the laser beam does not reach a bottom portion of a pore formed in the surface of the polishing pad. | 09-18-2014 |
20140299271 | Tunable Polish Rates By Varying Dissolved Oxygen Content - A system for tunable removal rates and selectivity of materials during chemical-mechanical polishing using a chemical slurry or solution with increased dissolved oxygen content. The slurry can optionally include additives to improve removal rate and/or selectivity. Further selectivity can be obtained by varying the concentration and type of abrasives in the slurry, using lower operating pressure, using different pads, or using other additives in the dispersion at specific pH values. | 10-09-2014 |
20150027636 | SCANNER OVERLAY CORRECTION SYSTEM AND METHOD - A method includes performing a semiconductor fabrication process on a plurality of substrates. The plurality of substrates are divided into a first subset and a second subset. A rework process is performed on the second subset of the plurality of substrates but not on the first subset. A respective mean value of at least one exposure parameter for a lithography process is computed for each respective one of the first and second subsets of the plurality of substrates. A scanner overlay correction and a mean correction are applied to expose a second plurality of substrates on which the rework process has been performed. The mean correction is based on the computed mean values. | 01-29-2015 |
20150101752 | SUBSTRATE PERIPHERAL PORTION MEASURING DEVICE, AND SUBSTRATE PERIPHERAL PORTION POLISHING APPARATUS - A projecting/receiving unit ( | 04-16-2015 |
20150298283 | SUBSTRATE TREATMENT DEVICE - A substrate treatment device which can detect a metal film remaining as a residue on a polished surface of a substrate after polishing with high accuracy is provided. The substrate treatment device includes a polishing section | 10-22-2015 |
20150332943 | POLISHING APPARATUS - A polishing apparatus for polishing a substrate is provided. The polishing apparatus includes: a polishing table holding a polishing pad; a top ring configured to press the substrate against the polishing pad; first and second optical heads each configured to apply the light to the substrate and to receive reflected light from the substrate; spectroscopes each configured to measure at each wavelength an intensity of the reflected light received; and a processor configured to produce a spectrum indicating a relationship between intensity and wavelength of the reflected light. The first optical head is arranged so as to face a center of the substrate, and the second optical head is arranged so as to face a peripheral portion of the substrate. | 11-19-2015 |
20150343593 | POLISHING APPARATUS - A polishing apparatus capable of correcting an inclination of a polishing head is disclosed. The polishing apparatus includes: a polishing table configured to support a polishing pad thereon; a polishing head configured to press a substrate against the polishing pad; a rotational shaft coupled to the polishing head; a self-aligning rolling bearing that tiltably supports the rotational shaft; a radial rolling bearing that receives a radial load of the rotational shaft; a detector configured to detect an inclination of the rotational shaft; and an inclination adjusting device configured to adjust the inclination of the rotational shaft. | 12-03-2015 |
20160039066 | PNEUMATIC CONNECTION TO CARRIER HEAD AND MONITORING OF THE CONNECTION - A chemical mechanical polishing system includes a carrier head having a flexible membrane and a chamber to apply pressure to the flexible membrane, a pressure control unit, a pressure supply line connecting the pressure control unit to the chamber, and a sensor located along the pressure supply line to detect a contaminant in the pressure supply line. | 02-11-2016 |
156345140 | With wafer retaining ring | 13 |
20080196833 | RETAINING RING WITH SHAPED SURFACE - A retaining ring can be shaped by machining or lapping the bottom surface of the ring to form a shaped profile in the bottom surface. The bottom surface of the retaining ring can include flat, sloped and curved portions. The lapping can be performed using a machine that dedicated for use in lapping the bottom surface of retaining rings. During the lapping the ring can be permitted to rotate freely about an axis of the ring. The bottom surface of the retaining ring can have curved or flat portions. | 08-21-2008 |
20090277583 | RETAINING RING FOR HOLDING SEMICONDUCTOR WAFERS IN A CHEMICAL MECHANICAL POLISHING APPARATUS - A retaining ring to be fitted on a chemical mechanical polishing apparatus for semiconductor wafers is disclosed, the retaining ring comprising a carrier ring made of a first material and having fitting elements for fitting the carrier ring on the polishing apparatus; and a bearing ring comprising a plastic material, arranged concentrically on the carrier ring, the bearing ring resting with a first front side on a polishing surface of the polishing apparatus and being held on its side axially opposed to the first front side releasably, non-rotatably, with a positive and/or frictional connection and without adhesive on the carrier ring; wherein the first material has a higher rigidity than the plastic material of the bearing ring. | 11-12-2009 |
20110240220 | Treatment apparatus for treating a surface of a body - The invention relates to a treatment apparatus ( | 10-06-2011 |
20120018093 | MULTILAYER RETAINING RING FOR CHEMICAL MECHANICAL POLISHING - A carrier head for a chemical mechanical polishing apparatus includes a retaining ring having a flexible lower portion and a rigid upper portion. | 01-26-2012 |
20130276979 | RETAINING RING FOR CHEMICAL MECHANICAL POLISHING - A carrier head for a chemical mechanical polishing apparatus includes a retaining ring having a flexible lower portion and a rigid upper portion. | 10-24-2013 |
20140053981 | Retaining Ring With Shaped Surface - A retaining ring can be shaped by machining or lapping the bottom surface of the ring to form a shaped profile in the bottom surface. The bottom surface of the retaining ring can include flat, sloped and curved portions. The lapping can be performed using a machine that dedicated for use in lapping the bottom surface of retaining rings. During the lapping the ring can be permitted to rotate freely about an axis of the ring. The bottom surface of the retaining ring can have curved or flat portions. | 02-27-2014 |
20140209239 | METHODS AND APPARATUS FOR POST-CHEMICAL MECHANICAL PLANARIZATION SUBSTRATE CLEANING - A method and apparatus for cleaning a substrate after chemical mechanical planarizing (CMP) is provided. The apparatus comprises a housing, a substrate holder rotatable on a first axis and configured to retain a substrate in a substantially vertical orientation, a first pad holder having a pad retaining surface facing the substrate holder in a parallel and spaced apart relation, the first pad holder rotatable on a second axis disposed parallel to the first axis, a first actuator operable to move the pad holder relative to the substrate holder to change a distance between the first axis and the second axis, and a second pad holder disposed in the housing, the second pad holder having a pad retaining surface facing the substrate holder in a parallel and spaced apart relation, the second pad holder rotatable on a third axis parallel to the first axis and the second axis. | 07-31-2014 |
20140231011 | FLATTENING METHOD AND FLATTENING APPARATUS - A flattening method, by utilizing the advantages of the CARE method and making up for the disadvantages, can perform removal processing of a surface of a workpiece at a sufficient processing rate and can provide a processed surface having enhanced flatness without leaving damage in the processed surface. A flattening method comprises at least two surface removal steps and at least two cleaning steps, the final surface removal step being a catalyst-referred etching step comprising immersing a workpiece in a processing solution containing at least one of hydrohalic acid, hydrogen peroxide water and ozone water, and bringing a surface of a catalyst platen into contact with or close proximity to a surface to be processed of the workpiece to process the surface, said catalyst platen having in a surface a catalyst selected from the group consisting of platinum, gold, a ceramic solid catalyst, a transition metal, glass, and an acidic or basic solid catalyst. | 08-21-2014 |
20150034246 | CHEMICAL MECHANICAL POLISHING FASTENING FIXTURE AND FASTENING BASE - A chemical mechanical polishing fastening fixture includes a fastening base and a fastening ring. The fastening base includes an annular substrate having a first combining face and a plurality of protruded blocks annularly aligned on the first combining face. Each protruded block is made of polyphenylene sulfide and includes a first buckling face. The first buckling face is tilted from a root portion thereof toward an outer side of the protruded block along a plane radially extending from the annular substrate. The fastening ring has a second combing face and a plurality of first grooves. The first grooves are annularly aligned on the second combining face. Parts of a flange of each first groove are constituted of a second buckling face, and the second buckling face is tilted from a root portion thereof toward the second combining face. | 02-05-2015 |
20160023323 | CARRIER HEAD AND CHEMICAL MECHANICAL POLISHING APPARATUS - Provided are a carrier head and a chemical mechanical polishing apparatus. The carrier head includes a body having a ring shape; a supporting unit surrounding the body; a retainer ring having a ring shape, the retainer ring surrounding the supporting unit; a membrane member on the supporting unit and within an inner circumference of the retainer ring; and an external ring on an outer surface of the membrane member, the external ring having a hydrophobic surface. | 01-28-2016 |
20160045997 | Retaining Ring With Shaped Surface - A retaining ring can be shaped by machining or lapping the bottom surface of the ring to form a shaped profile in the bottom surface. The bottom surface of the retaining ring can include flat, sloped and curved portions. The lapping can be performed using a machine that dedicated for use in lapping the bottom surface of retaining rings. During the lapping the ring can be permitted to rotate freely about an axis of the ring. The bottom surface of the retaining ring can have curved or flat portions. | 02-18-2016 |
20160052104 | POLISHING APPARATUS - A polishing apparatus in which a liquid containing a slurry hardly enters into a gap between a top ring body and a retainer ring during polishing, and the slurry can be discharged by cleaning even if the liquid containing the slurry enters into the gap, and slurry particles can be prevented from being attached to a surface of a substrate (wafer) when the substrate (wafer) is released is disclosed. The polishing apparatus includes a top ring having a top ring body and a retainer ring provided at an outer circumferential portion of the top ring body, and configured to hold a substrate to be polished and to press the substrate against the polishing surface, and a cleaning mechanism provided at a substrate transfer position for transferring the substrate to the top ring or receiving the substrate from the top ring, and having a cleaning nozzle configured to eject a cleaning liquid toward the top ring. The retainer ring has a recess formed over an entire circumference of an inner circumferential surface of the retainer ring. The cleaning nozzle is configured to eject the cleaning liquid toward the recess of the retainer ring. | 02-25-2016 |
20160176009 | POLISHING APPARATUS | 06-23-2016 |