Entries |
Document | Title | Date |
20080230106 | Forming a thin film electric cooler and structures formed thereby - Methods of forming a microelectronic structure are described. Embodiments of those methods include forming a first plurality of openings through a first surface of a substrate, forming a p-type TFTEC material within the first plurality of openings, forming a second plurality of openings substantially adjacent to the first plurality of openings through the first surface of the substrate, and then forming an n-type TFTEC material within the second plurality of openings. | 09-25-2008 |
20080236643 | Thermoelectric composite semiconductor - Heat transfer to refrigerate or heat uses a thermoelectric semiconductor structure including a P-type composite of dices of semiconductor material alloyed with P-type material forming spaced collector regions at junctions with a P-type conductive material for flux of electrical current and a N-type composite of dices of semiconductor material alloyed with N-type material forming spaced collector regions at junctions with a N-type conductive material for flux of electrical current. The thickness of each the dices is sufficient to form a PN junction. Electrically conductive buss bars form an electrical circuit between the dices of N-type conductivity and the dices of P-type conductivity. An electrically conductive buss bar forms an electrical circuit connection between the dices of N-type conductivity and the dices of P-type conductivity. An electrical potential is applied by terminals between the P-type composite and the N-type composite to induce a flux of heat concurrent with the flux of electrical current. | 10-02-2008 |
20080271771 | Thermoelectric Conversion Module - A thermoelectric conversion module which includes a good thermally conductive substrate that is inexpensive, and which secures the electrical insulating property between the good thermally conductive substrate and the electrode. The thermoelectric conversion element unit is constituted of a P-type semiconductor and an N-type semiconductor which are connected to form a π-shape. Electrodes are connected to both end faces of the thermoelectric conversion element units. The good thermally conductive substrates are brought in contact with the electrodes. The good thermally conductive substrates consist of aluminum or an aluminum alloy, and an anode oxide film is provided between the good thermally conductive substrates and the electrodes. | 11-06-2008 |
20090007952 | Structure of Peltier Element or Seebeck Element and Its Manufacturing Method - A Peltier or Seebeck element has first and second conductive members having different Seebeck coefficients. To decrease the heat conduction from one to the other end of each of the conductive members, the cross-section area at the intermediate part in the length direction is smaller than those at both ends parts. In place of the decrease of the cross-section, the shape of the cross-section of the intermediate part of each of the conductive members may be changed by dividing the intermediate part into pieces, or amorphous silicon or the like having a heat conductivity lower than those of the materials of both end parts may be used for the material of the intermediate part. In such a way, a high-performance Peltier/Seebeck element such that the difference between the temperature of the heated portion of the Peltier/Seebeck element and the opposite portion can be kept to a predetermined temperature difference for a long time and its manufacturing method are provided. | 01-08-2009 |
20090071524 | SUBSTRATE PROCESSING APPARATUS HAVING ELECTRODE MEMBER - An electrode member for generating plasma includes an electrode plate and a cooling unit having a plurality of thermoelectric modules that are thermally in contact with the electrode plate. The thermoelectric modules may regulate the temperature of the electrode plate based on the Peltier effect. | 03-19-2009 |
20090126771 | THERMOELECTRIC CONVERSION MODULE AND CONNECTOR FOR THERMOELECTRIC CONVERSION ELEMENTS - A connector for a thermoelectric conversion element free of a continuity failure and that is high in electrical reliability. In a thermoelectric conversion module, each thermoelectric conversion element has first and second electrode faces, and the thermoelectric conversion elements adjacent to each other are electrically connected thereto via connectors formed in a predetermined shape. Further, the connectors include a pair of fitted portions that are engagingly mounted to a first electrode face and another second electrode of the thermal electric conversion elements that are adjacent thereto, and a connection portions for connecting one pair of these fitted portions. | 05-21-2009 |
20090272417 | Process for Producing Peltier Modules, and Peltier Module - The invention relates to a method for producing Peltier modules, each of which comprises several Peltier elements that are arranged between at least two substrates. The substrates are made of an electrically insulating material at least on the sides facing the Peltier elements while being provided with contact areas on said surfaces. The contact areas, to which the Peltier elements are connected by means of terminal sure during the production process, are formed by metallic areas. | 11-05-2009 |
20090283126 | APPARATUS FOR GENERATING ELECTRICAL POWER FROM THE WASTE HEAT OF AN INTERNAL COMBUSTION ENGINE - An apparatus for generating electrical power from the waste heat generated by an internal combustion engine includes a first pipe wall through which a heated medium flows, a thermoelectric generator disposed exteriorly to the inner pipe wall, and a second pipe wall disposed exteriorly to the thermoelectric generator. The first pipe wall and the second pipe wall form at least a partially double-walled pipe. The first pipe wall saves as a high-temperature source. The second pipe wall serves as a low-temperature source. | 11-19-2009 |
20100031989 | THERMOELECTRIC MODULE AND METALLIZED SUBSTRATE - A thermoelectric module ( | 02-11-2010 |
20100163089 | THERMOELECTRIC DEVICE - A thermoelectric device includes a plurality of thin-film thermoelectric elements. Each thin-film thermoelectric element is a Seebeck-Peltier device. The thin-film thermoelectric elements are electrically coupled in parallel with each other. The thermoelectric device may be fabricated using conventional semiconductor processing technologies and may be a thin-film type device. | 07-01-2010 |
20100193000 | THERMOELECTRIC GENERATOR FOR CONVERTING THERMAL ENERGY INTO ELECTRICAL ENERGY - A thermoelectric generator for converting thermal energy into electrical energy includes a plurality of Peltier elements which are coupled into a module and are arranged between a heat source and a heat sink, with each Peltier element having of a p-doped leg and an n-doped leg which are connected at their ends in an electrically conductive manner by electrodes. Both the p-doped legs and the n-doped legs of the individual Peltier elements are made of different materials, the efficiency of which is optimized with respect to the different temperature values at the contact points of the individual Peltier elements to the heat source. The high-temperature range of the p-doped legs includes MM | 08-05-2010 |
20100258155 | THERMOELECTRIC ELEMENT - There is provided a thermoelectric (TE) element. The TE element includes a plurality of pn junctions each formed by bonding an n-type TE semiconductor and a p-type TE semiconductor with a metallic layer interposed therebetween, and a first electrode and a second electrode electrically connected to the n-type TE semiconductor and the p-type TE semiconductor, respectively. The plurality of pn junctions are laminated with insulating layers interposed therebetween, and are connected electrically in parallel to each other. Even in the case that a section of components does not operate electrically, the operation of the entire element is not adversely affected, thereby improving stability of the TE element. | 10-14-2010 |
20100263701 | THERMOELECTRIC DEVICE, MANUFACTURING METHOD FOR MANUFACTURING THERMOELECTRIC DEVICE, CONTROL SYSTEM FOR CONTROLLING THERMOELECTRIC DEVICE, AND ELECTRONIC APPLIANCE - A thermoelectric device includes rows of thermoelectric elements, each of which includes p-type thermoelectric elements and n-type thermoelectric elements that are alternately arranged in a first direction, the n-type thermoelectric elements each having a junction area electrically connected to one of the p-type thermoelectric elements that adjoins the n-type thermoelectric element; first insulators; and a second insulator. In the thermoelectric device, the first insulators are each arranged between a corresponding one of the p-type thermoelectric elements and one of the n-type thermoelectric elements that adjoins the p-type thermoelectric element. The rows of the thermoelectric elements are arranged in a second direction perpendicular to the first direction and connected to each other. The second insulator is arranged between the rows of thermoelectric elements in such a manner that the p-type thermoelectric elements and n-type thermoelectric elements of the rows of the thermoelectric elements are electrically connected in series. | 10-21-2010 |
20100326486 | THERMAL TRANSMITTER FOR ENERGY USE OF THERMAL RADIATION AND CONVECTION - A thermogenerator is fitted with a thermal transmitter arranged between a thermal storage battery and a thermal diffuser. The transmitter preferably forms a thermal barrier with imbedded Peltier elements acting as thermal gates between the accumulator and the diffuser. | 12-30-2010 |
20110048485 | Integrated battery management system for vehicles - A Peltier device manufactured into the surface of a battery cell | 03-03-2011 |
20110048486 | THERMOELECTRIC MODULE - A thermoelectric module includes: a plurality of thermoelectric elements that is electrically series-connected via a plurality of electrodes; and a pair of substrates on which the plurality of electrodes are formed on facing surfaces of the pair of substrates, the pair of substrates being provided perpendicularly to a heat transfer direction with the plurality of thermoelectric elements being interposed. An electrode of an upper substrate includes a first electrode having a size enough to electrically connect the thermoelectric elements that are spaced apart from each other by a distance corresponding to an area equivalent to an adjacent pair of the thermoelectric elements. An electrode of a lower substrate is provided correspondingly to a maximum placement number of the thermoelectric elements interposed between the substrates, and also has a size enough to electrically connect the adjacent pair of the thermoelectric elements. | 03-03-2011 |
20110100406 | SPLIT THERMO-ELECTRIC STRUCTURE AND DEVICES AND SYSTEMS THAT UTILIZE SAID STRUCTURE - The invention is a Split-Thermo-Electric Structure (STES) and devices and systems that utilize said structure. The STES comprises a first thermo-electric element at an elevated temperature and a second thermo-electric element at a low (cold) temperature. The first thermo-electric element and the second thermo-electric element are connected by either an intermediate connection that conducts both electric current and heat or by a thermo-electric chain comprised of one or more thermo-electric elements. Each pair of the thermo-electric elements in the chain are connected by an intermediate connection that conducts both electric current and heat. Each of the thermo-electric elements and each of the intermediate connections in the STES exhibit a temperature-gradient. The STESs can be utilized in Seebeck or Peltier devices. The STESs can be utilized to construct devices comprised a plurality of n-type and p-type pairs of STESs, wherein each of the STESs in the device are connected at each end to a support layer. One of the support layers can be thermally connected to a heat source and the second support layer thermally connected to a heat sink in order to create a thermo-electric system. The heat source or the heat sink or both can be located at a distance from their respective support layer. | 05-05-2011 |
20110114145 | NANOSTRUCTURES HAVING HIGH PERFORMANCE THERMOELECTRIC PROPERTIES - The invention provides for a nanostructure, or an array of such nanostructures, each comprising a rough surface, and a doped or undoped semiconductor. The nanostructure is an one-dimensional (1-D) nanostructure, such a nanowire, or a two-dimensional (2-D) nanostructure. The nanostructure can be placed between two electrodes and used for thermoelectric power generation or thermoelectric cooling. | 05-19-2011 |
20110120517 | Synthesis of High-Efficiency Thermoelectric Materials - A process for the fabrication of high efficiency thermoelectric materials using non-equilibrium synthesis routes is described. In one embodiment a molten alloy comprising a predetermined ratio of elements which will constitute the thermoelectric material is quenched at a cooling rate in excess of, for example, 10 | 05-26-2011 |
20110186101 | THERMOELECTRIC CONVERSION USING METAL-ION SOLUTIONS - A thermoelectric conversion device may be made of a pair of dissimilar materials conductively joined at opposite sides, wherein at least one of said materials is a metal ion liquid solution. A thermal differential between the opposite sides creates an electric current flow and the liquid metal ion solution resists thermal equilibrium. The liquid metal ion solution may be contained by a substantially nonconductive material, such as vinyl tubing. A plurality of pairs of these dissimilar materials may be joined in series to increase the current output. The metal ion of the liquid solution may be selected, for example, from a group consisting of Lithium (Li), Sodium (Na), and Potassium (K). | 08-04-2011 |
20110220162 | Thermoelectric (TE) Devices/Structures Including Thermoelectric Elements with Exposed Major Surfaces - A thermoelectric structure may include a thermally conductive substrate, and a plurality of thermoelectric elements arranged on a surface of the thermally conductive substrate. Moreover, each thermoelectric element may be non-parallel and non-orthogonal with respect to the surface of the thermally conductive substrate. For example, each of thermoelectric elements may be a planar thermoelectric element, and a plane of each of the thermoelectric elements may be oriented obliquely with respect to the surface of the thermally conductive substrate. | 09-15-2011 |
20110220163 | THERMOELECTRIC HETEROSTRUCTURE ASSEMBLIES ELEMENT - Improved thermoelectric assemblies are disclosed, wherein layers of heterostructure thermoelectric materials or thin layers of thermoelectric material form thermoelectric elements. The layers are bound together with agents that improve structural strengths, allow electrical current to pass in a preferred direction, and minimize or reduce adverse affects, such a shear stresses, that might occur to the thermoelectric properties and materials of the assembly by their inclusion. | 09-15-2011 |
20110226299 | DEVICE FOR ENERGY CONVERSION, ELECTRICAL SWITCHING, AND THERMAL SWITCHING - An improved design for maintaining nanometer separation between electrodes in tunneling, thermo-tunneling, diode, thermionic, thermoelectric, thermo-photovoltaic, current limiting, reset-able fusing, relay, circuit breaker and other devices is disclosed. At least one electrode is of a curved shape whose curvature is altered by temperature. Some embodiments use the nanometer separation to limit or stop current flow. Other embodiments reduce the thermal conduction between the two electrodes when compared to the prior art. The end result is an electronic device that maintains two closely spaced parallel electrodes in stable equilibrium with a nanometer gap there-between over a large area in a simple configuration for simplified manufacturability and use to convert heat to electricity or electricity to cooling, or limit current flow, or interrupt current flow. | 09-22-2011 |
20110240081 | THERMOELECTRIC MATERIAL, AND THERMOELECTRIC MODULE AND THERMOELECTRIC DEVICE INCLUDING THE THERMOELECTRIC MATERIAL - A thermoelectric material includes a compound represented by Formula 1: | 10-06-2011 |
20110277802 | Thermoelectric composite semiconductor - Heat transfer to refrigerate or heat uses a thermoelectric semiconductor structure including a P-type composite of dices of semiconductor material alloyed with P-type material forming spaced collector regions at junctions with a P-type conductive material for flux of electrical current and a N-type composite of dices of semiconductor material alloyed with N-type material forming spaced collector regions at junctions with a N-type conductive material for flux of electrical current. The thickness of each the dices is sufficient to form a PN junction. Electrically conductive buss bars form an electrical circuit between the dices of N-type conductivity and the dices of P-type conductivity. An electrically conductive buss bar forms an electrical circuit connection between the dices of N-type conductivity and the dices of P-type conductivity. An electrical potential is applied by terminals between the P-type composite and the N-type composite to induce a flux of heat concurrent with the flux of electrical current. | 11-17-2011 |
20110284046 | SEMICONDUCTOR HETEROSTRUCTURE THERMOELECTRIC DEVICE - A semiconductor heterostructure thermoelectric device ( | 11-24-2011 |
20110315182 | Thermoelectric Material, Thermoelectric Element, Thermoelectric Module and Method for Manufacturing the Same - T provide an N type thermoelectric material having figure of the merit improved to be comparable to or higher than that of P type thermoelectric material, the N type thermoelectric material of the present invention contains at least one kind of Bi and Sb and at least one kind of Te and Se as main components, and contains bromine (Br) and iodine (I) to have carrier in such a concentration that corresponds to the contents of bromine (Br) and iodine (I). | 12-29-2011 |
20120000501 | CONNECTION STRUCTURE OF ELEMENTS AND CONNECTION METHOD - A connection structure for elements includes a first plate having an electrode layer formed on one surface of the first plate, an element connected to the electrode layer at one surface of the element and a second plate connected to the other surface of the element. | 01-05-2012 |
20120017963 | THERMOELECTRIC MODULE WITH INSULATED SUBSTRATE - In a thermoelectric module comprising a series of p and n type semiconductors con | 01-26-2012 |
20120031450 | THERMOELECTRIC SEMICONDUCTOR COMPONENT - A thermoelectric semiconductor component, comprising an electrically insulating substrate surface and a plurality of spaced-apart, alternating p-type ( | 02-09-2012 |
20120174955 | THERMOELECTRIC MODULE - Disclosed herein is a thermoelectric module. The thermoelectric module is configured by enlarging a cross-section of a P-type thermoelectric device than that of an N-type thermoelectric device, thereby making it possible to reduce unbalance in heat distribution at a high temperature side or a low temperature side of the thermoelectric module and improve thermoelectric performance. | 07-12-2012 |
20120247524 | THERMOELECTRIC MATERIALS - Disclosed is an article having: a porous thermally insulating material, an electrically conductive coating on the thermally insulating material, and a thermoelectric coating on the electrically conductive coating. Also disclosed is a method of forming an article by: providing a porous thermally insulating material, coating an electrically conductive coating on the thermally insulating material, and coating a thermoelectric coating on the electrically conductive coating. The articles may be useful in thermoelectric devices. | 10-04-2012 |
20120279542 | SEEBECK/PELTIER THERMOELECTRIC CONVERSION DEVICE EMPLOYING A STACK OF ALTERNATED NANOMETRIC LAYERS OF CONDUCTIVE AND DIELECTRIC MATERIAL AND FABRICATION PROCESS - A multilayered stack useful for constituting a Seebeck-Peltier effect electrically conductive septum with opposite hot-side and cold-side metallizations for connection to an electrical circuit, comprises a stacked succession of layers (Ci) of electrically conductive material alternated to dielectric oxide layers (Di) in form of a continuous film or of densely dispersed nano and sub-nano particles or clusters of particles of oxide; at least the electrically conductive layers having mean thickness ranging from 5 to 100 nm and surface irregularities at the interfaces with the dielectric oxide layers of mean peak-to-valley amplitude and mean periodicity comprised between 5 to 20 nm. | 11-08-2012 |
20120318317 | MOLECULAR THERMOELECTRIC DEVICE - An enormous order-dependent quantum enhancement of thermoelectric effects in the vicinity of higher-order interferences has been discovered in the transmission spectrum of nanoscale junctions. Significant enhancements due to both transmission nodes and resonances across such junctions are exemplified by single-molecule junctions (SMJs) based on 3,3′-biphenyl and polyphenyl ether (PPE). Thermoelectric devices employing such SMJs offer superior efficiency and performance. Moreover, the enhanced thermoelectric response is not limited to only SMJs, but may be obtained from any junction exhibiting transmission nodes or resonances arising from coherent electronic transport. | 12-20-2012 |
20130014796 | THERMOELECTRIC ELEMENT AND THERMOELECTRIC MODULEAANM Tajima; KenichiAACI Kirishimi-shiAACO JPAAGP Tajima; Kenichi Kirishimi-shi JP - There are provided a thermoelectric element and a thermoelectric module that are manufacturable at low cost, suffer little from deterioration in thermoelectric characteristics even after a long period of use, and excel in durability. A thermoelectric element of the invention includes a columnar thermoelectric element main body, an insulating layer disposed on a periphery of the thermoelectric element main body, and a metal layer disposed on an end face of the thermoelectric element main body, the metal layer covering an end face of the insulating layer. Accordingly, a reaction with a solder is prevented and high thermoelectric characteristics is maintained even during a long period of use. | 01-17-2013 |
20130037070 | SEEBECK/PELTIER THERMOELECTRIC CONVERSION ELEMENT WITH PARALLEL NANOWIRES OF CONDUCTOR OR SEMICONDUCTOR MATERIAL ORGANIZED IN ROWS AND COLUMNS THROUGH AN INSULATING BODY AND PROCESS - A novel and effective structure of a stackable element (A | 02-14-2013 |
20130037071 | THERMOELECTRIC MODULE AND METHOD FOR PRODUCING A THERMOELECTRIC MODULE - A thermoelectric module which has at least one thermoelectric element for converting energy between thermal energy and electrical energy. The at least one thermoelectric element has a first surface and a second surface opposite the first surface. The thermoelectric module further has a first electrode, the first electrode having at least a first region which is arranged directly on the first surface and a second electrode, the second electrode having at least a second region which is arranged directly on the second surface. At least one of the first region and the second region has a metal alloy which exhibits an Invar effect. | 02-14-2013 |
20130061900 | THERMOELECTRIC DEVICE - A thermoelectric device absorbs heat from an object coming into contact with a heat absorber, moves the heat absorbed via a thermoelectric module to a radiator, and radiates the heat from the radiator. The support member has a lower surface that is bonded to a radiator upper surface, and a side surface that is placed so as to face the side surface of the heat absorber. The support member forms a tilling region between the support member and the side surface, and a sealing member fills the filling region. The thermoelectric module is placed in an internal space | 03-14-2013 |
20130074898 | THERMOELECTRIC COOLING SYSTEM UTILIZING THE THOMSON EFFECT - Thermoelectric cooling systems are disclosed that utilize the Thomson effect. The disclosed systems can be used, for example, in cryogenic applications. In one aspect, a system is provided for thermoelectric cooling. The system comprises a pair of semiconductor elements, a cold plate and a hot plate. The pair of semiconductor elements comprises a P-type semiconductor element having a first carrier concentration and an N-type semiconductor element having a second carrier concentration. The first carrier concentration is functionally graded over the P-type semiconductor element and the second carrier concentration is functionally graded over the N-type semiconductor element. Each semiconductor element has a cold end and a hot end. The cold plate is thermally coupled to the cold ends of the P-type semiconductor elements and the N-type semiconductor element. The hot plate is thermally coupled to the hot ends of the P-type semiconductor element and the N-type semiconductor element. | 03-28-2013 |
20130081662 | Thermoelectrical Device and Method for Manufacturing Same - A method for manufacturing a thermoelectrical device includes providing a substrate and also forming at least one deep trench into the substrate. The method further includes forming at least one thermocouple which comprises two conducting paths, wherein a first conducting path comprises a first conductive material and a second conducting path comprises a second conductive material, such that at least the first conducting path is embedded in the deep trench of the substrate. | 04-04-2013 |
20130081663 | THERMOELECTRIC MODULE - The present invention relates to a thermoelectric module, there is provided a thermoelectric module including a metal layer surface treated for securing roughness at one surface thereof and a top substrate and a bottom substrate made of an insulating film formed on the surface treated one surface. | 04-04-2013 |
20130087179 | THERMOELECTRIC MODULE - Provided is a thermoelectric module applied to an energy storage device cooling system to increase the cooling efficiency. The thermoelectric module includes P-type thermoelectric elements and N-type thermoelectric elements disposed alternately, a metal electrode provided between each P-type thermoelectric element and each N-type thermoelectric element, a heat absorbing plate connected to a bottom side of the metal electrode located between the P-type thermoelectric element and the N-type thermoelectric element, and a heat emitting plate connected to a top side of the metal electrode located between the N-type thermoelectric element and the P-type thermoelectric element. | 04-11-2013 |
20130104951 | OPTIMIZED THERMOELECTRIC MODULE FOR OPERATION IN PELTIER MODE OR IN SEEBECK MODE | 05-02-2013 |
20130125948 | THERMOELECTRIC CONVERSION ELEMENT, MANUFACTURING METHOD FOR THE THERMOELECTRIC CONVERSION ELEMENT, AND THERMOELECTRIC CONVERSION MODULE - In a thermoelectric conversion module, each of a p-type element and an n-type element is configured by aligning a plurality of particles in series and connecting the particles to each other. Around a connection part in which the particles are connected to each other, a protrusion is protruded. The protrusion has a shape of continuously extending around the entire periphery of the connection part. The protrusion may be partly interrupted, but in such a case, a circumferential length of one interrupted portion is less than one half of the periphery of the connection part. | 05-23-2013 |
20130174884 | ANISOTROPIC AMBIPOLAR TRANSVERSE THERMOELECTRICS AND METHODS FOR MANUFACTURING THE SAME - A transverse thermoelectric device includes a superlattice body, electrically conductive first and second contacts, and first and second thermal contacts. The superlattice body extends between opposite first and second ends along a first direction and between opposite first and second sides along a different, second direction. The superlattice body includes alternating first and second layers of crystalline materials oriented at an oblique angle relative to the first direction. The electrically conductive first contact is coupled with the first end of the superlattice and the electrically conductive second contact is coupled with the second end of the superlattice. The first thermal contact is thermally coupled to the first side of the superlattice and the second thermal contact is thermally coupled to the second side of the superlattice. A Seebeck tensor of the superlattice body is ambipolar. | 07-11-2013 |
20130180561 | NANOCOMPOSITES WITH HIGH THERMOELECTRIC PERFORMANCE AND METHODS - Disclosed herein include nanocomposites with improved thermoelectric performance. Also disclosed herein include methods of manufacturing and methods of using such nanocomposites. | 07-18-2013 |
20130186446 | THERMOELECTRIC DEVICE - A thermoelectric device includes a plurality of thin-film thermoelectric elements. Each thin-film thermoelectric element is a Seebeck-Peltier device. The thin-film thermoelectric elements are electrically coupled in parallel with each other. The thermoelectric device may be fabricated using conventional semiconductor processing technologies and may be a thin-film type device. | 07-25-2013 |
20130192654 | THERMOELECTRIC MODULE COMPRISING THERMOELECTRIC ELEMENT DOPED WITH NANOPARTICLES AND MANUFACTURING METHOD OF THE SAME - A thermoelectric module and a method of manufacturing the same are provided. The thermoelectric module includes a plurality of thermoelectric elements disposed between first and second substrates opposite to each other and including a metal electrode, the plurality of thermoelectric elements are formed by alternately arranging n-type and p-type thermoelectric semiconductor elements doped with nano particles, and the thermoelectric module includes a thermoelectric element doped with nano particles and connected in series through a metal electrode of upper and lower insulating substrates. Thereby, a thermoelectric index can increase without a high production cost and thus a thermoelectric module having excellent efficiency can be manufactured. | 08-01-2013 |
20130220393 | Hybrid Solar Cell Integrating Photovoltaic and Thermoelectric Cell Elements for High Efficiency and Longevity - Methods, systems and apparatus for a solar cell integrating photovoltaic and thermoelectric cell elements to form a hybrid solar cell having increased efficiency and longevity by combining operation of the photovoltaic and thermoelectric elements in at least three different modes of operation to increase electrical output per unit of panel area and to increase cell life, improve performance, and provide operational benefits under different environmental conditions. | 08-29-2013 |
20130247949 | High Efficiency Thermoelectric Device - A thermoelectric device based on a multilayer structure having alternate layers of metal/material mixture. The alternate layers have differing metal content. The layer structure is irradiated with ionizing radiation to produce nanoclusters in the layers. The differing metal content serves to quench the nanoclusters to isolate nanoclusters along the radiation track. The result is a thermoelectric device with a high figure of merit. In one embodiment, the multilayer structure is fabricated and then irradiated with high energy radiation penetrating the entire layer structure. In another embodiment, layers are irradiated sequentially during fabrication using low energy radiation. | 09-26-2013 |
20130291920 | MODULABLE AND ADJUSTABLE THERMOELECTRIC DEVICE AND OPERATING METHOD OF THE THERMOELECTRIC DEVICE - The thermoelectric device includes a first set of identical unitary thereto-electric systems, each system including at least one thermocouple and the first set has at least one faulty unitary thermoelectric system. It further has devices for detecting functional unitary thermoelectric systems of the first set of unitary thermoelectric systems, and devices designed to electrically connect a second set of functional unitary thermoelectric systems chosen from the first set of unitary thermoelectric systems, in the form of an electric circuit, so that all the unitary thermoelectric systems of the electric circuit have the same current flowing through them. | 11-07-2013 |
20140083477 | THERMOELECTRIC DEVICE - The disclosed relates to a thermoelectric device for generating electrical currents exploiting the Seebeck effect, more specifically a structural thermoelectric device which can replace a structural component of a body. The structural thermoelectric device can include a first conductor layer, a second conductor layer and located therebetween a polymer thermocouple layer having a reinforcement formed from a structural support, wherein the internal surface of the support includes at least one layer of at least one conducting polymer. The reinforcement can be is porous material with a plurality of voids, wherein the internal surfaces of the voids are coated with a conducting polymer, which is capable of providing the Peltier effect. | 03-27-2014 |
20140090683 | Thermoelectric Devices and Methods of Manufacture - Thermoelectric devices are provided. In one embodiment, a thermoelectric device may include a glass wafer defined by conductive vias, a second wafer, and a plurality of metal film disposed between the glass wafer and the second wafer and against solid, conductive, integral, end surfaces of the conductive vias. A nanogap may be disposed between the metal film and the second wafer. The nanogap may have been created by applying a voltage extending between the conductive vias and the second wafer. Methods of forming the devices, along with methods of using the devices to transform heat energy to electricity, and for refrigeration, are also provided. | 04-03-2014 |
20140109948 | THERMOELECTRIC MODULE, THERMOELECTRIC DEVICE COMPRISING THE SAME, AND PROCESS FOR PREPARING THE THERMOELECTRIC ELEMENT - A thermoelectric module including: an n-type thermoelectric element; a p-type thermoelectric element; a diffusion blocking layer bonded integrally on each of a top and a bottom surface of the n-type thermoelectric element and on each of a top and a bottom surface of the p-type thermoelectric element; an electrode on the n-type thermoelectric element and on the p-type thermoelectric element; and a bonding layer disposed between the electrode and at least one of the n-type thermoelectric element and the p-type thermoelectric element, wherein the bonding layer includes an amorphous metal. | 04-24-2014 |
20140116491 | BULK-SIZE NANOSTRUCTURED MATERIALS AND METHODS FOR MAKING THE SAME BY SINTERING NANOWIRES - Thermoelectric solid material and method thereof. The thermoelectric solid material includes a plurality of nanowires. Each nanowire of the plurality of nanowires corresponds to an aspect ratio (e.g., a ratio of a length of a nanowire to a diameter of the nanowire) equal to or larger than 10, and each nanowire of the plurality of nanowires is chemically bonded to one or more other nanowires at at least two locations of the each nanowire. | 05-01-2014 |
20140137916 | THERMOELECTRIC MATERIAL, THERMOELECTRIC ELEMENT AND MODULE INCLUDING THE SAME, AND METHOD OF PREPARING THE THERMOELECTRIC MATERIAL - A thermoelectric material including a 3-dimensional nanostructure, wherein the 3-dimensional nanostructure includes a 2-dimensional nanostructure connected to a 1-dimensional nanostructure. | 05-22-2014 |
20140174494 | THERMOELECTRIC MATERIAL, THERMOELECTRIC ELEMENT AND APPARATUS INCLUDING THE SAME, AND PREPARATION METHOD THEREOF - A thermoelectric material including a compound represented by Formula 1: | 06-26-2014 |
20140182646 | THERMOELECTRIC MATERIAL AND THERMOELECTRIC DEVICE INCLUDING THE SAME - A thermoelectric material includes a stack structure including alternately stacked first and second material layers. The first material layer may include a carbon nano-material. The second material layer may include a thermoelectric inorganic material. The first material layer may include a thermoelectric inorganic material in addition to the carbon nano-material. The carbon nano-material may include, for example, graphene. At least one of the first and second material layers may include a plurality of nanoparticles. The thermoelectric material may further include at least one conductor extending in an out-of-plane direction of the stack structure. | 07-03-2014 |
20140305479 | Thermoelectric devices having reduced parasitics - A tubular thermoelectric device wherein conductive substrates and completion elements serve a multiple role of structural support, thermal conductance and electrical conductance. Improved system thermoelectric performance accrues from the minimization of the number of interfaces between dissimilar materials, leading to a reduction in system thermal parasitics and system electrical parasitics. By engineering the shape and orientation of substrates and completion elements, improvements in heat transfer to heat reservoirs is accomplished and improved electrical conductivity is accomplished. | 10-16-2014 |
20140326286 | EFFICIENCY-ENHANCED THERMOELECTRIC DEVICES - An efficiency-enhanced, three-terminal, bi-junction thermoelectric device driven by independently-adjustable parameters of temperature and voltage. | 11-06-2014 |
20140373889 | TE PERFORMANCE BY BAND CONVERGENCE IN (Bi1-XSbX)2Te3 - Disclosed herein are thermoelectric materials with high performance characteristics, and methods of use thereof Among the thermoelectric materials disclosed are those of the formula (Bi | 12-25-2014 |
20140373890 | NANOCOMPOSITE THERMOELECTRIC DEVICES - Thermoelectric cooling devices and methods for producing and using the devices are disclosed, wherein the cooling devices include a polymer composite of a polymer and nanoparticles of at least one paramagnetic material. A source for producing an electric field within the polymer composite produces a corresponding heat transfer from one surface of the composite to the other. | 12-25-2014 |
20150020861 | Method for Production of High Figure of Merit Thermoelectric Materials - A thermoelectric device and method based on creating a structure of nanoclusters in a composite metal and insulator material by co-depositing the metal and insulator material and irradiating the composite material to create nanoclusters of metal within the composite material. In one variation, the composite material may be continuously deposited and concurrently irradiated. A further variation based on a multilayer structure having alternate layers of metal/material mixture. The alternate layers have differing metal content. The layer structure is irradiated with ionizing radiation to produce nanoclusters in the layers. The differing metal content serves to quench the nanoclusters to isolate nanoclusters along the radiation track. The result is a thermoelectric device with a high figure of merit. In one embodiment, the multilayer structure is fabricated and then irradiated with high energy radiation penetrating the entire layer structure. In another embodiment, layers are irradiated sequentially during fabrication using low energy radiation. | 01-22-2015 |
20150047685 | POWDER METALLURGICAL PRODUCTION OF A THERMOELECTRIC COMPONENT - The invention relates to a method for producing a thermoelectric component or at least a semifinished version thereof, in which at least one thermoelectric active material in dry powder form is introduced into at least some of the holes of a perforated template. It addresses the problem of specifying a method which can be conducted in a particularly economically viable manner. The problem is solved by virtue of the active material remaining in the holes of the template, and the template filled with active material becoming a constituent of the thermoelectric component produced. | 02-19-2015 |
20150083178 | SEEBECK/PELTIER THERMOELECTRIC CONVERSION DEVICE HAVING PHONON CONFINEMENT LAYERS OF CRYSTALLINE SEMICONDUCTOR CONTAINING ANGSTROM-SIZED ORGANIC GROUPS AS SEMICONDUCTOR ATOMS SUBSTITUENTS WITHIN THE CRYSTAL LATTICE AND FABRICATION PROCESS - Significant phonon migration restraint is achieved within a relatively homogeneous polycrystalline doped semiconductor bulk by purposely creating in the crystal lattice of the semiconductor hydrocarbon bonds with the semiconductor, typically Si or Ge, constituting effective organic group substituents of semiconductor atoms in the crystalline domains. An important enhancement of the factor of merit Z of such a modified electrically conductive doped semiconductor is obtained without resorting to nanometric cross sectional dimensions in order to rely on surface scattering eventually enhanced by making the surface highly irregular and/or creating nanocavities within the bulk of the conductive material. A determinant scattering of phonons migrating under the influence and in the direction of a temperature gradient in the homogeneous semiconductor takes place at the organic groups substituents in the crystalline doped semiconductor bulk. Fabrication processes and Seebeck-Peltier energy conversion devices are exemplarily described. | 03-26-2015 |
20150114441 | THERMOELECTRIC MATERIAL INCLUDING NANO-INCLUSIONS, THERMOELECTRIC MODULE AND THERMOELECTRIC APPARATUS INCLUDING THE SAME - A thermoelectric material including a thermoelectric matrix; and nano-inclusions in the thermoelectric matrix, the nano-inclusions having an average particle diameter of about 10 nanometers to about 30 nanometers. | 04-30-2015 |
20150129010 | THERMOELECTRIC DEVICE AND FABRICATING METHOD THEREOF - Provided is a thermoelectric device. The thermoelectric device includes a substrate; first and second electrodes disposed at one side of the substrate, wherein the first and second electrodes are apart from each other; a common electrode formed on the other side of the substrate, wherein the common electrode is separated from the first and second electrodes; first and second legs connecting the common electrode to the first electrode, and the common electrode to the second electrode, respectively; and first and second barrier patterns covering the first and second legs and the substrate between the common electrode and the first electrode and between the common electrode and the second electrode, wherein the first and second barrier patterns prevents the short between the first and second legs and the common electrode and between the first and second legs and the first and second electrodes. | 05-14-2015 |
20150311420 | THERMOELECTRIC MODULE - A thermoelectric module includes a pair of support substrates; a wiring conductor disposed on each of one main faces opposing each other of the pair of support substrates; and thermoelectric elements electrically connected to the wiring conductor. A sealing member is disposed on a periphery of the region between the one main faces opposing each other of the pair of support substrates. The sealing member has a plurality of voids in an interior thereof. | 10-29-2015 |
20150333243 | High Temperature Thermoelectrics - In accordance with one embodiment of the present disclosure, a thermoelectric device includes a plurality of thermoelectric elements that each include a diffusion barrier. The diffusion barrier includes a refractory metal. The thermoelectric device also includes a plurality of conductors coupled to the plurality of thermoelectric elements. The plurality of conductors include aluminum. In addition, the thermoelectric device includes at least one plate coupled to the plurality of thermoelectric elements using a braze. The braze includes aluminum. | 11-19-2015 |
20150340583 | SEEBECK/PELTIER THERMOELECTRIC CONVERSION ELEMENT WITH PARALLEL NANOWIRES OF CONDUCTOR OR SEMICONDUCTOR MATERIAL ORGANIZED IN ROWS AND COLUMNS THROUGH AN INSULATING BODY AND PROCESS - A novel and effective structure of a stackable element (A | 11-26-2015 |
20160079510 | CASCADE THERMOELECTRIC MODULE CONFIGURABLE FOR EITHER COMMON OR SEPARATE POWER - Embodiments described herein include a cascade Thermoelectric Module (TEM) that includes at least three headers. A first header and a first surface of a second header electrically connect first legs to form a stage of thermoelectric devices electrically connected in series, and define first and second leg placement positions for a subset of the first legs. A second surface of the second header and a third header electrically connect second legs to form another stage of thermoelectric devices electrically connected in series, and define first and second leg placement positions for a subset of the second legs. The stages are electrically coupled in series when the subsets of the first and second legs are positioned in their respective first leg placement positions, and the stages are electrically decoupled when the subsets of the first and second legs are positioned in their respective second leg placement positions. | 03-17-2016 |
20160104829 | THERMOELECTRIC CONVERSION ELEMENT AND THERMOELECTRIC CONVERSION MODULE - Provided are a thermoelectric conversion element in which an electrode pair is formed on a substrate, an insulating layer is formed between the electrode pair, an n-type thermoelectric conversion layer containing an organic n-type thermoelectric conversion material is formed on one electrode, and a p-type thermoelectric conversion layer containing an organic p-type thermoelectric conversion material is formed on the other electrode, while the n-type thermoelectric conversion layer and the p-type thermoelectric conversion layer have a separation region in which the two members are arranged apart by the insulating layer and a contact region formed thereabove, in which the two members are joined to each other; and a thermoelectric conversion module using this thermoelectric conversion element. | 04-14-2016 |
20160181498 | Enhanced Power Conversion Efficiency from Thermoelectric Metamaterials | 06-23-2016 |