University Of Seoul Foundation Of Industry- Academic Cooperation Patent applications |
Patent application number | Title | Published |
20130121059 | MULTI-VALUED LOGIC DEVICE HAVING NONVOLATILE MEMORY DEVICE - A multi-valued logic device having an improved reliability includes a conversion unit configured to convert a multi level signal into a plurality of partial signals; and a plurality of nonvolatile memory devices configured to individually store the plurality of partial signals, wherein a number of bits of each of the plurality of partial signals individually stored in the plurality of nonvolatile memory devices is less than the number of bits of the multi level signal. | 05-16-2013 |
20110231355 | INTELLIGENT UBIQUITOUS-CITY MIDDLEWARE APPARATUS AND THE U-CITY SYSTEM HAVING THE SAME - An intelligent U-City middleware apparatus and the U-City adopting the same are disclosed. The intelligent U-City middleware apparatus provides intelligent service based on context-awareness and a variety of intelligent ubiquitous convergence services for the applications of U-City. It is composed of four layers: Common Device Interface Layer, Context-aware Computing Layer, Ubiquitous Core Computing Layer and Common Application Interface Layer. The layers cooperate to give intelligent ubiquitous convergence services and provide the advantages of layered architecture. | 09-22-2011 |
20100215836 | FERROELECTRIC MATERIAL AND METHOD OF FORMING FERROELECTRIC LAYER USING THE SAME - Disclosed herein are a ferroelectric material that can be effectively used in manufacturing various electric and electronic elements, and a method of forming a ferroelectric layer using the ferroelectric material. The ferroelectric material in accordance with the present invention is composed of a mixture of an inorganic ferroelectric material and an organic ferroelectric material. The method of forming a ferroelectric layer includes: preparing a mixed solution of an inorganic ferroelectric material and an organic material; forming a ferroelectric film by applying the mixed solution onto a substrate; and forming a ferroelectric layer by annealing the ferroelectric film. | 08-26-2010 |
20100096679 | FET, FERROELECTRIC MEMORY DEVICE, AND METHODS OF MANUFACTURING THE SAME - Disclosed herein are a field-effect transistor (FET), a ferroelectric memory device, and methods of manufacturing the same. The FET and the ferroelectric memory device in accordance with the present invention include: a substrate | 04-22-2010 |
20090287091 | Apparatus and method for generating high resolution image of human body using terahertz electromagnetic wave and endoscope using the same - An apparatus and a method for generating a high resolution image of a human body using a terahertz electromagnetic wave and an endoscope using the same are disclosed. In accordance with the present invention, a third laser beam and a terahertz electromagnetic wave excited by a first laser beam are radiated on a portion of a human body having a contrast agent adhered thereto to generate a high resolution image based on the terahertz electromagnetic wave reflected from the portion of the human body and a second laser beam. | 11-19-2009 |