20140312407 | NONVOLATILE MEMORY DEVICE AND FABRICATING METHOD THEREOF - A nonvolatile memory device comprises a substrate, a gate electrode, a single charge trapping sidewall and a source/drain region. The gate electrode is disposed on and electrically isolated from the substrate. The single charge trapping sidewall is disposed adjacent to a sidewall of the gate electrode and electrically isolated from the substrate and the gate electrode, so as to form a non-straight angle between the substrate and the single charge trapping sidewall. The source/drain region is disposed in the substrate and adjacent to the gate electrode. | 10-23-2014 |