20090173945 | METHOD FOR FORMING CONDUCTIVE FILM, THIN-FILM TRANSISTOR, PANEL WITH THIN-FILM TRANSISTOR, AND METHOD FOR MANUFACTURING THIN-FILM TRANSISTOR - A conductive film having high adhesion and low specific resistance is formed. A target containing copper as a main component is sputtered in vacuum ambience while an oxygen gas introduced, and then, a conductive film containing copper as a main component and additive metals, such as Ti or Zr, is formed. Such a conductive film has high adhesion to a silicon layer and a glass substrate and is hardly peeled off from the substrate. Furthermore, the specific resistance is low and the contact resistance to a transparent conductive film is also low. Thus, no deterioration in the electric characteristics occurs even when the conductive film is used for an electrode film. Accordingly, the conductive film formed by the present invention suited for TFT, and electrode films and barrier films of semiconductor elements, in particular. | 07-09-2009 |
20090170685 | METHOD OF PRODUCING A LEAD ZIRCONIUM TITANATE-BASED SINTERED BODY, LEAD ZIRCONIUM TITANATE-BASED SINTERED BODY, AND LEAD ZIRCONIUM TITANATE-BASED SPUTTERING TARGET - To obtain a method of producing a high-density lead zirconium titanate-based sintered body having uniform crystalline phases and containing a large amount of PbO, provided is a method of producing a lead zirconium titanate-based sintered body, including: producing a pre-sintered body by sintering raw material powder of lead zirconium titanate having a stoichiometric composition at a temperature of 900° C. or more and 1,200° C. or less; pulverizing the pre-sintered body; producing lead-excessive mixed powder by adding PbO powder to powder obtained by pulverizing the pre-sintered body; and sintering the lead-excessive mixed powder at a temperature lower than the sintering temperature of the pre-sintered body. Because the sintering process is divided into two stages, a high-density (e.g., 95% or more) PZT sintered body constituted only of PZT having a stoichiometric composition in which PbZrO | 07-02-2009 |