Tokyo Electron Limited Patent applications |
Patent application number | Title | Published |
20160141154 | MEASUREMENT SYSTEM AND MEASUREMENT METHOD - A measurement system for measuring a consumption amount of a focus ring in a plasma etching apparatus including a processing chamber, a lower electrode and the focus ring surrounding a periphery of the lower electrode, comprises a sensor substrate having a distance sensor and a measurement unit configured to measure a consumption amount of the focus ring. The measurement unit includes a transfer instruction unit, an acquisition unit and a measurement unit. The transfer instruction unit is configured to instruct a transfer unit to transfer the sensor substrate into the processing chamber. The acquisition unit is configured to acquire information on a physical amount corresponding to a distance from the distance sensor to the focus ring, which is measured by the distance sensor. The measurement unit is configured to measure a consumption amount of the focus ring based on the acquired information on the physical amount. | 05-19-2016 |
20160126114 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a processing chamber, a table disposed in the processing chamber, a dielectric window provided at the processing chamber, and a surrounding body made of a dielectric material surrounding a processing space between the table and the dielectric window. The dielectric window and the surrounding body are separated from each other in a vertical direction with a predetermined gap therebetween. | 05-05-2016 |
20160126066 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a processing container that defines a processing space, a gas supply unit provided on a sidewall of the processing container and configured to supply gas to the processing space, a dielectric member having a facing surface that faces the processing space, and an antenna provided on a surface opposite to the facing surface of the dielectric member and configured to radiate microwaves that turn the gas into plasma to the processing space through the dielectric member. The gas supply unit includes a transport hole transporting the gas to a position where the gas does not reach the processing space in the inside of the sidewall of the processing container and an injection hole communicated to the transport hole and configured to inject the gas transported to the position into the processing space. The injection hole has a diameter larger than that of the transport hole. | 05-05-2016 |
20160118222 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a processing chamber, a part of which is formed of a dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting a target substrate; a processing gas supply unit for supplying a processing gas to the processing chamber to perform a plasma process on the target substrate; an RF antenna, provided outside the dielectric window, for generating a plasma from the processing gas by an inductive coupling in the processing chamber; and an RF power supply unit for supplying an RF power to the RF antenna. The RF antenna includes a single-wound or multi-wound coil conductor having a cutout portion in a coil circling direction; and a pair of RF power lines from the RF power supply unit are respectively connected to a pair of coil end portions of the coil conductor that are opposite to each other via the cutout portion. | 04-28-2016 |
20160109508 | HEAT TREATMENT APPARATUS AND HEAT TREATMENT METHOD - A substrate inspection apparatus includes a mounting table, an inspection unit, a temperature control unit and a medium channel. The mounting table mounts thereon a substrate on which a semiconductor device is formed. The inspection unit inspects electrical characteristics of the semiconductor device on the mounted substrate. The temperature control unit controls a temperature of the mounting table. The medium channel passes through the mounting table. The temperature control unit includes a high-temperature medium supply unit supplies a high-temperature medium to the medium channel, a low-temperature medium supply unit supplies a low-temperature medium to the medium channel and a medium mixing unit mixes the high-temperature medium and the low-temperature medium which are supplied to the medium channel. | 04-21-2016 |
20160108538 | SUBSTRATE PROCESSING METHOD AND TEMPLATE - A substrate processing method of performing a predetermined processing by supplying a processing liquid to a processing region of a substrate and using processing target ions in the processing liquid, includes: arranging a template to face the substrate, the template including a passage configured to distribute the processing liquid, a direct electrode, and an indirect electrode, and the substrate including a counter electrode, which matches with the direct electrode, installed in the processing region; supplying the processing liquid to the processing region through the passage; and performing the predetermined processing on the substrate by applying a voltage to the indirect electrode to cause the processing target ions to migrate to the counter electrode side while applying a voltage between the direct electrode and the counter electrode to oxidize or reduce the processing target ions that have migrated to the counter electrode side. | 04-21-2016 |
20160099131 | WORKPIECE PROCESSING METHOD - Disclosed is a method of processing a workpiece including a mask. The processing method includes: a first process of generating plasma of a first gas containing a silicon halide gas in a processing container of a plasma processing apparatus that accommodates a workpiece having a mask, to form a reactive precursor; a second process of purging a space in the processing container; a third process of generating plasma of a second gas containing oxygen gas in the processing container to form a silicon oxide film; and a fourth process of purging the space in the processing container. In the processing method, a sequence including the first to fourth processes is repeated. | 04-07-2016 |
20160096203 | LIQUID PROCESSING METHOD, MEMORY MEDIUM AND LIQUID PROCESSING APPARATUS - A liquid processing method for liquid-processing a substrate includes setting a substrate on a substrate holding device which rotates the substrate such that the substrate is held in horizontal position, supplying processing liquid to center portion of the substrate such that the center portion positioned center side with respect to peripheral portion of the substrate is liquid-processed, positioning a discharge port of a processing liquid nozzle toward downstream side in rotation direction such that the liquid is discharged to the peripheral portion obliquely to surface of the substrate and along tangential direction of the substrate while the substrate is rotated, and discharging gas from a gas nozzle perpendicularly to the surface of the substrate toward position that is adjacent to liquid landing position of the liquid on the surface of the substrate and is on the center side of the substrate, while the liquid is discharged to the peripheral portion. | 04-07-2016 |
20160071700 | PLASMA PROCESSING APPARATUS AND CLEANING METHOD - Disclosed is a plasma processing apparatus that turns a processing gas into plasma so as to process a substrate. The plasma processing apparatus includes: a processing container configured to hermetically accommodate a substrate therein; a placement table installed on a bottom surface of the processing container, and configured to place the substrate thereon; a gas supply mechanism configured to supply at least one of a processing gas and a purge gas to an inside of the processing container through a gas supply pipe; a plasma generating mechanism configured to generate plasma of the processing gas within the processing container; an exhaust mechanism configured to exhaust the inside of the processing container through an exhaust pipe; and an ultrasonic vibration generating mechanism configured to apply ultrasonic vibration to a corner portion within the processing container. | 03-10-2016 |
20160064259 | SUBSTRATE LIQUID PROCESSING APPARATUS - A substrate liquid processing apparatus includes a substrate holding device which holds a substrate in horizontal position and rotate the substrate around vertical axis of the substrate, a liquid discharge device which is positioned underneath central portion of lower surface of the substrate in the horizontal position and discharges processing liquid toward the lower surface of the substrate, and a gas discharge passage structure which has a gas discharge passage formed around the discharge device such that drying gas passes through. The discharge device has a head including a cover which is extending beyond upper end of the passage such that the cover is covering the upper end of the passage, a liquid discharge port which is protruding from the cover toward the substrate in the horizontal position, and a curved portion which is formed between the port and cover such that the curved portion has a surface bending downward. | 03-03-2016 |
20160064247 | ETCHING METHOD - A method for selectively etching a first region of silicon oxide with respect to a second region of silicon nitride includes a first step of exposing a target object having the first region and the second region to a plasma of a processing gas containing a fluorocarbon gas, etching the first region, and forming a deposit containing fluorocarbon on the first region and the second region. The method further includes a second step of etching the first region by a radical of the fluorocarbon contained in the deposit. In the first step, the plasma is generated by a high frequency power supplied in a pulsed manner. Further, the first step and the second step are repeated alternately. | 03-03-2016 |
20160064245 | ETCHING METHOD - Disclosed is a method for etching a first region including a multi-layer film formed by providing silicon oxide films and silicon nitride films alternately, and a second region having a single silicon oxide film. The etching method includes: providing a processing target object including a mask provided on the first region and the second region within a processing container of a plasma processing apparatus; generating plasma of a first processing gas including a hydrofluorocarbon gas within the processing container that accommodates the processing target object; and generating plasma of a second processing gas including a fluorocarbon gas within the processing container that accommodates the processing target object. The step of generating the plasma of the first processing gas and the step of generating the plasma of the second processing gas are alternately repeated. | 03-03-2016 |
20160064192 | METHOD FOR SUPPLYING GAS, AND PLASMA PROCESSING APPARATUS - In the exemplary embodiment, a method for supplying a gas is provided. This method includes supplying a processing gas to each of a central gas inlet portion and a peripheral gas inlet portion through a first branch line and a second branch line; closing a valve at a downstream side in a gas line for an additional gas, and filling the additional gas in a tube between the valve and an upstream flow rate controller; opening the valve after filling the additional gas, and supplying a high frequency power to one of an upper electrode and a lower electrode from a high frequency power supply after opening the valve. | 03-03-2016 |
20160056021 | PLASMA ETCHING APPARATUS AND PLASMA ETCHING METHOD - A plasma etching apparatus of the present disclosure etches a substrate by plasma of a processing gas. The plasma etching apparatus includes a processing container; a holding unit configured to hold a substrate; and an electrode plate. The plasma etching apparatus further includes configured to supply the processing gas to a space between the holding unit and the electrode plate and disposed in n (n is a natural number of two or more) regions of the substrate divided concentrically in a radial direction, respectively. In addition, the plasma etching apparatus further includes a high frequency power source configured to supply a high frequency power to at least one of the holding unit and the electrode plate so as to generate plasma. The plasma etching apparatus controls a flow rate of the processing gas. | 02-25-2016 |
20160056018 | ELECTRIC PRESSURE SYSTEMS FOR CONTROL OF PLASMA PROPERTIES AND UNIFORMITY - This disclosure relates to a plasma processing system for controlling plasma density near the edge or perimeter of a substrate that is being processed. The plasma processing system may include a plasma chamber that can receive and process the substrate using plasma for etching the substrate, doping the substrate, or depositing a film on the substrate. This disclosure relates to a plasma processing system for controlling plasma density near the edge or perimeter of a substrate that is being processed. In one embodiment, the plasma density may be controlled by reducing the rate of loss of ions to the chamber wall during processing. This may include biasing a dual electrode ring assembly in the plasma chamber to alter the potential difference between the chamber wall region and the bulk plasma region. | 02-25-2016 |
20160042926 | PLASMA PROCESSING APPARATUS AND FOCUS RING - Disclosed is a plasma processing apparatus including a focus ring installed outside a substrate mounted on a mounting table including a temperature control mechanism. The focus ring is configured to be in contact with the mounting table via a heat transfer sheet. A heat insulating layer having a heat conductivity lower than that of the focus ring is provided on a surface of the focus ring at a side of the heat transfer sheet among surfaces of the focus ring. | 02-11-2016 |
20160035604 | Substrate Processing Device and Substrate Processing Device-Use Coupling Member - A substrate processing device to suppress contamination inside a transfer chamber, suppresses heat conduction from a processing chamber to a transfer chamber with a simple structure, and reduce cost is disclosed. The substrate processing device includes a process module maintained in a vacuum atmosphere to perform plasma process on a wafer, a transfer module maintained in a vacuum atmosphere to transfer the wafer into/out of the process module; and a coupling member connects the process module and the transfer module. The coupling member has a metal frame member interposed between a vacuum chamber of the process module and a transfer module housing part, and that separates the transfer module having a vacuum atmosphere and an exterior of the substrate processing device having an air atmosphere; and a plurality of spherical members that is in contact with an inner surface of the frame member inside the frame member. | 02-04-2016 |
20160035541 | PLASMA PROCESSING APPARATUS AND GAS SUPPLY MEMBER - Disclosed is a plasma processing apparatus including: a processing container; a support member provided within the processing container and configured to support a processing target substrate; and a gas supply member including a first region formed with a gas supply hole, a second region not formed with a gas supply hole, and a third region formed with a gas supply holes. The first to third regions are disposed sequentially from a central portion side of the processing target substrate along a radial direction of the processing target substrate, and the plasma processing apparatus is processed to introduce a processing gas from the gas supply holes of the gas supply member for plasma processing of the processing target substrate into the processing container. | 02-04-2016 |
20160027641 | MULTI-STEP SYSTEM AND METHOD FOR CURING A DIELECTRIC FILM - A multi-step system and method for curing a dielectric film in which the system includes a drying system configured to reduce the amount of contaminants, such as moisture, in the dielectric film. The system further includes a curing system coupled to the drying system, and configured to treat the dielectric film with ultraviolet (UV) radiation and infrared (IR) radiation in order to cure the dielectric film. | 01-28-2016 |
20160027620 | METHOD AND APPARATUS FOR ESC CHARGE CONTROL FOR WAFER CLAMPING - A plasma processing method and apparatus are provided in which current spikes associated with application of a voltage to an electrostatic chuck (ESC) are minimized or reduced when the processing plasma is present. According to an example, the voltage is applied to the ESC after the processing plasma is struck, however the voltage is ramped or increased in a step-wise manner to achieve the desired final ESC voltage. In an alternate embodiment, the ESC voltage is at least partially applied before striking of the plasma for processing the wafer. By reducing current spikes associated with application of the voltage to the ESC during the presence of the processing plasma, transfer or deposition of particles on the wafer can be reduced. | 01-28-2016 |
20160017484 | CARBON FILM FORMATION METHOD, AND CARBON FILM - A carbon film formation method according to an exemplary embodiment includes supplying an aromatic hydrocarbon gas having a methyl group into a processing chamber that accommodates a workpiece; generating plasma of a noble gas in a plasma generating chamber that is isolated from the processing chamber by a shielding unit; supplying particles in the plasma into the processing chamber through an opening in the shielding unit; and irradiating the particles to the aromatic hydrocarbon gas to form a carbon film having a π-conjugated ring structure or a π-conjugated chain structure on the workpiece. | 01-21-2016 |
20160005651 | WORKPIECE PROCESSING METHOD - Disclosed is a method of processing a workpiece so as to form an opening that extends from an oxide region to a base layer through a portion between the raised regions. The method includes: (1) a step of forming an opening in the oxide region to expose a second section between the raised regions; and (2) a step of etching a residue made of silicon oxide and existing within the opening and a second section. In the second step, a denatured region is formed by exposing the workpiece to plasma of a mixed gas including a hydrogen-containing gas and NF | 01-07-2016 |
20150380282 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A controller disclosed herein drives, in a first step, a high frequency generating source at a first energy condition, and drives, in a second step, a high frequency generating source at a second energy condition. Prior to a switching time of the first step and the second step, the controller switches gas species supplied from the gas supply system into the processing container, and sets a gas flow rate in an initial period just after the switching to be larger than a gas flow rate in a stabilization period after lapse of the initial period. | 12-31-2015 |
20150380280 | FLOW-RATE REGULATOR DEVICE, DILUTED CHEMICAL-LIQUID SUPPLY DEVICE, LIQUID PROCESSING APPARATUS AND ITS OPERATING SYSTEM - A flow-rate regulator device for controlling a flow rate of a liquid includes a first flow-rate regulator component positioned on an upstream side of a liquid line, and a second flow-rate regulator component positioned on a downstream side of the liquid line and connected in series to the first flow-rate regulator component. The first flow-rate regulator component adjusts a degree of opening such that a flow rate of liquid flowing through the liquid line is set a specified number of times greater than a target flow rate when the second flow-rate regulator component has a full opening, and the second flow-rate regulator component adjusts a degree of opening such that the flow rate of the liquid flowing through the liquid line is to be at the target flow rate when the first flow-rate regulator component is adjusted to have the degree of opening. | 12-31-2015 |
20150380271 | NEUTRAL BEAM ETCHING OF CU-CONTAINING LAYERS IN AN ORGANIC COMPOUND GAS ENVIRONMENT - A method and apparatus for dry etching pure Cu and Cu-containing layers for manufacturing integrated circuits. The invention uses a directional beam of O-atoms with high kinetic energy to oxidize the Cu and Cu-containing layers, and organic compound etching reagents that react with the oxidized Cu to form volatile Cu-containing etch products. The invention allows for low-temperature, anisotropic etching of pure Cu and Cu-containing layers in accordance with a patterned hard mask or photoresist. | 12-31-2015 |
20150377812 | PRESSURE SENSOR AND METHOD FOR MANUFACTURING THE SAME - Disclosed is a pressure sensor that outputs a temperature change caused in an electrical resistor according to a pressure of a gas, as a resistance change in the electrical resistor. The pressure sensor includes: a base substrate including a recess formed therein, a floating film formed on the base substrate, a heater formed on a surface of the floating film and configured to heat the floating film when a current flows therein, and a temperature sensor formed as the electrical resistor on the surface of the floating film. The temperature sensor changes a voltage drop with respect to a current flowing therein according to the temperature of the floating film. | 12-31-2015 |
20150377735 | PRESSURE SENSOR AND METHOD FOR MANUFACTURING THE SAME - Disclosed is a method for manufacturing a sensor module that generates heat through an electric resistor adapted to be exposed to a gas, and outputs a temperature change caused in the electric resistor according to a pressure of the gas, as a resistance change of the electric resistor. The method includes: forming an insulation layer on a substrate in which the insulation layer is an oxide film or a nitride film; and forming a conductor layer on the insulation layer under a temperature condition of 300° C. to 600° C., in which the conductor layer serves as the electric resistor. | 12-31-2015 |
20150377732 | PRESSURE MEASURING DEVICE AND PRESSURE MEASURING METHOD - Provided is a pressure measuring device including a first electric resistor that is exposed to gas; a second electric resistor that is exposed to gas and has the same structure as that of the first electric resistor; a first measuring unit that measures a first voltage drop generated across the first electric resistor; a second measuring unit that measures a second voltage drop generated across the second electric resistor; a third measuring unit that measures a third voltage drop generated across the first electric resistor; a calculating unit that calculates a correction value that corrects the third voltage drop, based on a difference between the first voltage drop and the second voltage drop; and an output unit that corrects the third voltage drop using the calculated correction value and outputs a pressure value according to the third voltage value after the correction. | 12-31-2015 |
20150373783 | PLACING TABLE AND PLASMA PROCESSING APPARATUS - Provided is a placing table configured to place a workpiece thereon. The placing table includes: an electrostatic chuck configured to attract the workpiece; a support member configured to support a focus ring; and a metal base having a first region configured to support the electrostatic chuck and a second region configured to support the support member, the second region surrounding the first region. The support member includes: an intermediate layer formed of a ceramic sintered compact and supported on the second region via an adhesive; a thermally sprayed ceramic layer formed on the intermediate layer by a thermal spraying method; and a heater electrode provided within the thermally sprayed ceramic layer. The heater electrode is formed by the thermal spraying method. | 12-24-2015 |
20150371830 | METHOD FOR ETCHING INSULATION FILM - Disclosed is a method for etching an insulation film of a processing target object. The method includes: in a first term, periodically switching ON and OFF of a high frequency power so as to excite a processing gas containing fluorocarbon and supplied into a processing container of a plasma processing apparatus; and in a second term subsequent to the first term, setting the high frequency power to be continuously turned ON so as to excite the processing gas supplied into the processing container. In one cycle consisting of a term where the high frequency is turned ON and a term where the high frequency power is turned OFF in the first term, the second term is longer than the term where the high frequency power is turned ON. | 12-24-2015 |
20150362546 | PROBE APPARATUS AND WAFER TRANSFER SYSTEM - The present disclosure provides a probe apparatus that is capable of suppressing generation of a transfer error by adsorbing and holding a semiconductor wafer even in a case where the semiconductor wafer has been warped. The probe apparatus includes a measuring section and a loader section, that is, a transfer unit. The loader section is provided with a wafer cassette placed on a load port, a wafer transfer mechanism having a wafer transfer arm, and a gas ejection mechanism having a gas ejection nozzle. When the wafer transfer arm adsorbs and holds a warped semiconductor wafer in the wafer cassette, the gas ejection nozzle ejects a gas from a substantially central portion on the upper side of the semiconductor wafer toward the lower side, thereby reducing warpage of the semiconductor wafer. | 12-17-2015 |
20150361559 | HYDROPHOBIZATION TREATMENT APPARATUS, HYDROPHOBIZATION TREATMENT METHOD, AND HYDROPHOBIZATION TREATMENT RECORDING MEDIUM - A hydrophobization treatment apparatus includes a cooling device which cools a substrate, a light irradiation device which irradiates thermal radiation light from light sources onto front surface of the substrate, a gas supply device which supplies hydrophobization-treatment gas to the substrate, an exhaust device which exhausts the gas, a lifting device which moves the substrate such that the lifting device raises and lowers the substrate between the cooling device and light sources, and a control device which has circuitry to control the light irradiation device, the gas supply device, the exhaust device and the lifting device. The circuitry of the control device executes first gas supply control to discharge and exhaust the gas into and from the space between the gas container and substrate, and after the first control, second gas supply control to discharge and exhaust the gas into and from the space between the gas container and substrate. | 12-17-2015 |
20150357165 | PLASMA PROCESSING APPARATUS AND CLEANING METHOD - Disclosed is a plasma processing apparatus including: a processing container; a susceptor configured to serve as a lower electrode and mount a processing target substrate thereon; a shower head provided above the susceptor to supply a processing gas into the processing container; an upper electrode provided above the placing table; a high frequency power supply configured to apply a high frequency power to the susceptor to generate plasma of the processing gas within the processing container; and a DC voltage application unit configured to apply a DC voltage to the upper electrode. The shower head includes a UEL base, and a CEL provided on the UEL base at susceptor side, and an insulating portion provided between the UEL base and the CEL. The DC power supply applies the DC voltage to the CEL. | 12-10-2015 |
20150348756 | INTEGRATED INDUCTION COIL & MICROWAVE ANNTENNA AS AN ALL-PLANAR SOURCE - This disclosure relates to a plasma processing system that can use a single power source assembly to generate inductively coupled plasma (ICP) and surface wave plasma using the same physical hardware. The power source assembly may include an antenna plate that may include a conductive material be used an ICP coil for a radio frequency (RF) power source and as a slot antenna for a microwave source. | 12-03-2015 |
20150340258 | SUBSTRATE TRANSPORT APPARATUS - A substrate transport apparatus for detecting with high accuracy rubbing between a substrate held in a substrate holding tool, and a support which transports a substrate. The substrate transport apparatus includes: a stage for placing thereon the substrate holding tool; a substrate transport mechanism including the support for the substrate, and a back-and-forth movement mechanism for moving the support, the mechanism configured to transfer a substrate to/from the substrate holding tool; a lifting mechanism for moving the support up and down with respect to the substrate holding tool; a sound amplifying section for amplifying a contact sound generated by contact between a substrate held in the substrate holding tool and the support; and a detection section for detecting rubbing between a substrate and the support based on a detection signal from a vibration sensor which detects a solid-borne sound, propagating through the substrate holding tool, and outputs the detection signal. | 11-26-2015 |
20150340243 | PLASMA ETCHING METHOD - In a plasma etching method, with respect to a substrate to be processed, which has a base layer, a silicon oxide film, and an etching mask formed in this order, the etching mask having an etching pattern formed thereon and being formed of polysilicon, a silicon-containing deposit is deposited on a surface of the etching mask using a plasma generated from a processing gas, while applying a negative direct current voltage to an upper electrode formed of silicon. Furthermore, in the plasma etching method, the silicon oxide film is etched using plasma generated from a first CF-based gas using, as a mask, the etching mask having the silicon-containing deposit deposited thereon. | 11-26-2015 |
20150332932 | METHOD FOR ETCHING ETCHING TARGET LAYER - Disclosed is an etching method for etching an etching target layer. The etching method includes: a first step of depositing a plasma reaction product on a mask layer made of an organic film formed on the etching target layer; and after the first step, a second step of etching the etching target layer. The mask layer includes a coarse region in which a plurality of openings are formed, and a dense region surrounding the coarse region. The mask layer exists more densely in the dense region than in the coarse region. The coarse region includes a first region and a second region positioned close to the dense region compared to the first region. In the second step of the etching method, a width of the openings in the first region becomes narrower than a width of the openings in the second region. | 11-19-2015 |
20150332929 | PLASMA ETCHING METHOD AND PLASMA ETCHING APPARATUS - Disclosed is a plasma etching method including a deposition process and an etching process. For a processing target object including a base layer and a photoresist having a predetermined pattern which are laminated in sequence, the deposition process deposits a protective layer including silicon and carbon on the photoresist of the processing target object by plasma of a first processing gas including silicon tetrachloride gas, methane gas, and hydrogen gas. The etching process etches the base layer by plasma of a second processing gas using the photoresist including the protective layer deposited thereon, as a mask. The second processing gas is different from the first processing gas. | 11-19-2015 |
20150332898 | PLASMA PROCESSING APPARATUS - Provided is a plasma processing apparatus that performs a processing on a processing target substrate by applying plasma of a processing gas on the processing target substrate. The plasma processing apparatus includes: a processing container configured to accommodate the processing target substrate; a lower electrode disposed in the processing container to mount the processing target substrate thereon; an upper electrode disposed in the processing container to face the lower electrode with a processing space being interposed therebetween; a high frequency power source configured to apply a high frequency power between the upper electrode and the lower electrode; a main magnet unit including one or more annular main electromagnetic coils arranged around a central axis; and an auxiliary magnet unit configured to form a magnetic field that perpendicularly or obliquely crosses the central axis in the processing space. | 11-19-2015 |
20150332167 | SYSTEM AND METHOD FOR MODELING AND/OR ANALYZING MANUFACTURING PROCESSES - Systems and techniques for modeling and/or analyzing manufacturing processes are presented. A dataset component generates a plurality of binary classification datasets based on process data associated with one or more fabrication tools. A learning component generates a plurality of learned models based on the plurality of binary classification datasets and applies a weight to the plurality of learned models based on a number of data samples associated with the plurality of binary classification datasets to generate a weighted plurality of learned models. A merging component merges the weighted plurality of learned models to generate a process model for the process data. | 11-19-2015 |
20150330631 | METHOD FOR PREVENTING EXPLOSION OF EXHAUST GAS IN DECOMPRESSION PROCESSING APPARATUS - Disclosed is a plasma processing apparatus in which a main control unit is capable of managing the processing situation of an exhaust gas in an exhaust gas processing unit through a dilution controller. The exhaust gas processing unit includes a detoxifying device connected to the outlet of a vacuum pump through an exhaust pipe, a dilution gas source connected to the exhaust pipe near the outlet of the vacuum pump through a dilution gas supply pipe, an MFC and an opening/closing valve installed at the middle of the dilution gas supply pipe, a gas sensor attached to the exhaust pipe on the downstream side of an end (node N) of the dilution gas supply pipe, and a dilution controller configured to control the MFC. | 11-19-2015 |
20150325448 | ETCHING METHOD, SUBSTRATE PROCESSING METHOD, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT, AND SEMICONDUCTOR ELEMENT - A fluorocarbon layer is formed on a silicon substrate that is a to-be-processed substrate (step A). A resist layer is formed on the thus-formed fluorocarbon layer (step B). Then, the resist layer is patterned into a predetermined shape by exposing the resist layer to light by means of a photoresist layer (step C). The fluorocarbon layer is etched using the resist layer, which has been patterned into a predetermined shape, as a mask (step D). Next, the resist layer served as a mask is removed (step E). After that, the silicon substrate is etched using the remained fluorocarbon layer as a mask (step F). Since the fluorocarbon layer by itself functions as an antireflective film and a harm mask, the reliability of processing can be improved, while reducing the cost. | 11-12-2015 |
20150325415 | ETCHING METHOD - Disclosed is an etching method for selectively etching an oxidation layer made of silicon from a processing target object having the oxidation layer within a processing chamber of a plasma processing apparatus. The etching method includes: forming an altered layer by generating plasma of a gas containing hydrogen, nitrogen, and fluorine to alter the oxidation layer; and after the forming the altered layer, irradiating secondary electrons to the processing target object to remove the altered layer within the processing chamber, in which a negative direct current voltage is applied on an upper electrode of the plasma processing apparatus so that positive ions generated from plasma collide against the upper electrode and thus the secondary electrons are emitted from the upper electrode. | 11-12-2015 |
20150311106 | ELECTROSTATIC CHUCK, PLACING TABLE AND PLASMA PROCESSING APPARATUS - Disclosed is an electrostatic chuck including a circular placing region configured to place a processing target object thereon. The placing region includes a bottom surface and a plurality of protrusions configured to protrude from the bottom surface. Further, the plurality of protrusions is formed at a plurality of positions set at a regular interval on each of a plurality of circles set concentrically and at a regular interval around a center of the placing region. Furthermore, among the plurality of positions, a plurality of positions set on each of any two adjacent circles is set not to be positioned on the same straight line extending from the center. | 10-29-2015 |
20150305097 | MICROWAVE HEATING APPARATUS AND MICROWAVE HEATING METHOD - A microwave heating apparatus includes: a processing chamber including a ceiling wall and a bottom wall and accommodating a target object; a microwave introducing unit to generate a microwave for heating the target object; a holding unit to hold the target object; and a control unit to control the microwave introducing unit to heat the target object. During heating the target object, the holding unit holds the target object at a position in which a distance H | 10-22-2015 |
20150303103 | CATALYST ADSORPTION METHOD AND CATALYST ADSORPTION DEVICE - A catalyst adsorption method can sufficiently adsorb a catalyst to a lower portion of a recess formed in a substrate. A substrate | 10-22-2015 |
20150303092 | DE-CHUCK CONTROL METHOD AND CONTROL DEVICE FOR PLASMA PROCESSING APPARATUS - A de-chuck control method is provided for de-chucking a workpiece from an electrostatic chuck, which includes a chuck electrode and electrostatically attracts the workpiece. The de-chuck control method includes acquiring a time-integration value of a current by measuring the current flowing from the chuck electrode for a predetermined time period after a plasma process is ended and a voltage applied to the chuck electrode is turned off; calculating a difference between the time-integration value of the current and an electric charge charged to the chuck electrode during the plasma process; calculating a counter voltage according to a residual charge of the electrostatic chuck based on the difference and a predetermined correlation between the time-integration value of the current and a torque acting on a support pin for supporting the workpiece; and applying the counter voltage to the chuck electrode while introducing gas into a processing chamber and generating plasma. | 10-22-2015 |
20150303083 | SUBSTRATE PROCESSING DEVICE AND SUBSTRATE TRANSFER METHOD - Provided is a substrate processing device capable of improving throughput without increasing the operation speed of a drive device. Vacuum processing chambers which house a wafer for plasma processing of the wafer are respectively provided with gate valves for opening and closing a wafer inlet/outlet port, and wafer detection sensors for detecting the wafer moving forward or backward through the wafer inlet/outlet port, and a scara robot for making extending/retracting motion and rotating motion transfers the wafer. At this time, the scara robot starts the rotating motion to transfer the wafer picked up from the vacuum processing chamber in response to a trigger signal transmitted from the wafer detection sensor. The trigger signal indicates that the wafer has passed through the wafer inlet/outlet port and has arrived at a point where the gate valve and the wafer inlet/outlet port no longer interfere with the wafer. | 10-22-2015 |
20150303069 | PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS - Plasma etching is performed while suppressing bowing during etching of a multi-layer film. The plasma etching is performed multiple times using a processing gas containing HBr gas and C | 10-22-2015 |
20150294841 | PLASMA ETCHING METHOD AND PLASMA ETCHING APPARATUS - Provided is a plasma etching method of etching OCOC film in which HTO films and carbon films are alternately laminated by plasma of mixed gas containing first CF-based gas or second CF-based gas and oxygen gas using a silicon film formed on OCOC film as a mask. The etching of OCOC film includes a first etching process of etching a region spanning from the top surface to the middle of OCOC film by plasma of mixed gas containing first CF-based gas having a predetermined ratio of content of carbon to content of fluorine and oxygen gas and a second etching process of etching a region spanning from the middle of OCOC film to the lowest layer by plasma of mixed gas containing second CF-based gas having a ratio of content of carbon to content of fluorine, which is higher than the predetermined ratio of first CF-based gas, and oxygen gas. | 10-15-2015 |
20150294839 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - Disclosed is a plasma processing apparatus including a processing container, a placing table, a central introduction section, and a peripheral introduction section. The central introduction section is provided above the placing table. The central introduction introduces a gas toward the placing table along the axis passing through a center of the placing table. The peripheral introduction section is provided between the central introduction section and a top surface of the placing table in a height direction. In addition, the peripheral introduction section is formed along a side wall. The peripheral introduction section provides a plurality of gas ejection ports arranged in a circumferential direction with respect to the axis. The plurality of gas ejection ports of the peripheral introduction section extend away from the placing table as the gas ejection ports come close to the axis. | 10-15-2015 |
20150291425 | METHOD AND APPARATUS FOR PROCESSING CARBON NANOTUBES - A method for processing carbon nanotubes includes positioning in a treatment chamber of a carbon nanotube processing apparatus a substrate having multiple carbon nanotubes bundled together and oriented substantially perpendicular to a surface of the substrate, and introducing a microwave into the treatment chamber from a planar antenna having multiple microwave radiation holes such that plasma of an etching gas is generated and that the plasma etches the carbon nanotubes starting from one end of the carbon nanotubes bundled together. | 10-15-2015 |
20150290599 | CHEMICAL-LIQUID MIXING METHOD AND CHEMICAL-LIQUID MIXING APPARATUS - The present invention provides a chemical-liquid mixing method and a chemical-liquid mixing apparatus capable of sufficiently generating a peroxornonosulfuric acid that is effective in removing a resist from a substrate, when a sulfuric acid and a hydrogen peroxide solution are mixed with each other. At first, an inner tank | 10-15-2015 |
20150287618 | PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS - Provided are a plasma processing method and a plasma processing apparatus which may form a protective film on the surface of an etching stop layer and suppress clogging of openings of holes when etching an oxide layer are provided. The plasma processing method forms a plurality of holes having different depths in multi-layered films that include an oxide layer, a plurality of etching stop layers made of tungsten, and a mask layer. The plasma processing method includes an etching process in which a processing gas is supplied to generate plasma such that etching is performed from the top surface of the oxide layer to the plurality of etching stop layers so as to form hole having different depths in the oxide layer. Here, the processing gas includes a fluorocarbon-based gas, a rare gas, oxygen, and nitrogen. | 10-08-2015 |
20150279691 | METHOD OF FORMING THIN METAL AND SEMI-METAL LAYERS BY THERMAL REMOTE OXYGEN SCAVENGING - Methods for forming thin metal and semi-metal layers by thermal remote oxygen scavenging are described. In one embodiment, the method includes forming an oxide layer containing a metal or a semi-metal on a substrate, where the semi-metal excludes silicon, forming a diffusion layer on the oxide layer, forming an oxygen scavenging layer on the diffusion layer, and performing an anneal that reduces the oxide layer to a corresponding metal or semi-metal layer by oxygen diffusion from the oxide layer to the oxygen scavenging layer. | 10-01-2015 |
20150279627 | FILM-FORMING APPARATUS - In a film-forming apparatus according to an aspect, a substrate placed on a substrate placing region passes through a first region and a second region in this order by rotation of a placing table. A precursor gas is supplied to the first region. Plasma of a reaction gas is generated in the second region by a plasma generation section. The plasma generation section includes an antenna that supplies microwaves as a plasma source. The antenna includes a dielectric window member and a waveguide. The window member is provided above the second region. The waveguide defines a waveguide path that extends in a radial direction. The waveguide is formed with a plurality of slot holes that allow the microwaves to pass therethrough from the waveguide path toward the window member plate. A bottom surface of the window member defines a groove that extends in the radial direction. | 10-01-2015 |
20150263131 | Method of Forming Self-Aligned Contacts Using a Replacement Metal Gate Process in a Semiconductor Device - Techniques disclosed herein provide a gate pitch scaling solution for creating source/drain contacts in a replacement metal gate fabrication scheme. Such techniques provide a self-aligned contact process that protects gate electrodes from shorts due to etching from misaligned patterns. Techniques herein provide a dual layer cap formed by making a semi conformal material deposition over a non-planar topography of RMG formation structures, and using selective etching and planarization to yield a dual layer protective cap that does not excessively increase an aspect ratio. | 09-17-2015 |
20150262794 | PLASMA PROCESSING METHOD - The present disclosure provides a method of performing a plasma processing on a substrate by using a plasma processing apparatus including a processing container; an outer upper electrode provided to face a lower electrode; an inner upper electrode disposed inside the outer upper electrode; a first high-frequency power supply; a first power feeding unit; a second power feeding unit; and a variable condenser. The first and second power feeding units, a fixed condenser formed between the outer upper electrode and the inner upper electrode, and a closed circuit including the variable condenser become a resonance state when the variable condenser has a capacitance value in a predetermined resonance region. The method includes selectively using a capacitance value in a first region lower than the resonance region of the variable condenser and a capacitance value in a second region higher than the resonance region to perform the plasma processing. | 09-17-2015 |
20150259801 | METHOD FOR FORMING CARBON NANOTUBES AND CARBON NANOTUBE FILM FORMING APPARATUS - A method for forming carbon nanotubes includes preparing a target object having a surface on which one or more openings are formed, each of the openings having a catalyst metal layer on a bottom thereof; performing an oxygen plasma process on the catalyst metal layers; and activating the surfaces of the catalyst metal layers by performing a hydrogen plasma process on the metal catalyst layers subjected to the oxygen plasma process. The method further includes filling carbon nanotubes in the openings on the target object by providing an electrode member having a plurality of through holes above the target object in a processing chamber, and then growing the carbon nanotubes by plasma CVD on the activated catalyst metal layer by diffusing active species in a plasma generated above the electrode member toward the target object through the through holes while applying a DC voltage to the electrode member. | 09-17-2015 |
20150255355 | SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD AND MEMORY MEDIUM - A substrate processing system includes a film-forming device to form photosensitive film on substrate, an exposure device to expose the film on the substrate, a relay device to transfer the substrate between the film-forming and exposure devices, a warping data acquisition device to acquire measured warping data of the substrate, a communication device to perform data communication with the exposure device, and a control device including film-forming, relay, measuring, and communication control sub-devices. The film-forming sub-device controls the film-forming device to form the film on the substrate, the relay sub-device controls the relay device to transfer the substrate to the exposure device, the measuring sub-device controls the warping data acquisition device to acquire the data after the controlling by the film-forming sub-device prior to the controlling by the relay sub-device, and the communication sub-device controls the communication device to transmit the data to the exposure device. | 09-10-2015 |
20150255316 | SUBSTRATE CLEANING METHOD, SUBSTRATE CLEANING APPARATUS AND VACUUM PROCESSING SYSTEM - In order to remove a deposit adhered to the backside of the peripheral portion of a wafer, a cleaning gas containing carbon dioxide gas is set to a pressure that is slightly lower than the pressure corresponding to a vapor pressure line of carbon dioxide at a temperature in the nozzle, and a gas cluster of carbon dioxide is generated. A gas cluster of carbon dioxide generated under such a condition is in a state immediately prior to undergoing a phase change to a liquid and therefore is a gas cluster having a large cluster diameter and having molecules that are firmly solidified. | 09-10-2015 |
20150255305 | PLASMA ETCHING METHOD AND PLASMA ETCHING APPARATUS - In a plasma etching method for forming a hole in an etching target film, a process of generating a plasma of a processing gas containing at least C | 09-10-2015 |
20150255258 | PLASMA PROCESSING APPARATUS AND SUBSTRATE PROCESSING APPARATUS PROVIDED WITH SAME - Provided is a plasma processing apparatus including: a rotary mounting table supported by a rotatory shaft arranged rotatably within a processing chamber and including multiple substrate placement units arranged side by side in a circumferential direction; a processing gas supplying section for supplying processing gas into the processing chamber; a plasma generating section wherein multiple microwave introducing mechanisms, each provided on the ceiling of the processing chamber so as to face the rotary mounting table and used for generating a plasma of the processing gas, are arranged in multiple rows spaced apart from each other from the inside of the movement path of the substrates when the rotary mounting table is rotated to the outside, each row of microwave introducing mechanisms being formed by arranging the microwave introducing mechanisms annularly side by side along the circumferential direction; and an exhaust unit that evacuates an inside of the processing chamber. | 09-10-2015 |
20150255257 | SUBSTRATE COOLING MEMBER, SUBSTRATE PROCESSING DEVICE, AND SUBSTRATE PROCESSING METHOD - An objective of the present invention is to simplify a configuration of a processing chamber for cooling a substrate in a substrate processing device. In a plasma processing device ( | 09-10-2015 |
20150249017 | SPACER MATERIAL MODIFICATION TO IMPROVE K-VALUE AND ETCH PROPERTIES - A method for performing a spacer etch process is described. The method includes conformally applying a spacer material over a gate structure on a substrate, and performing a spacer etch process sequence to partially remove the spacer material from a capping region of the gate structure and a substrate region on the substrate adjacent a base of the gate structure, while retaining a spacer sidewall positioned along a sidewall of the gate structure. The K-value of high-K spacer materials are reduced to an acceptable range with oxidation using an oxygen plasma treatment. The etch rate of low-K spacer materials are reduced to a target range using a nitrogen plasma treatment. Integration of the spacer etch processing is selected based on impact to the other structures in the substrate. | 09-03-2015 |
20150247235 | METHOD OF CLEANING PLASMA PROCESSING APPARATUS - There is provided a cleaning method for removing a first deposit, formed on an upper electrode through an etching of a metal layer containing a metal, by using a plasma generated between a lower electrode of a lower structure and the upper electrode in a processing chamber of a plasma processing apparatus. The method includes a step of colliding ions with the first deposit formed on the upper electrode and a step of removing a second deposit, which is generated by said colliding and formed on the lower structure. Further, a cycle including the step of colliding and the step of removing is repeated multiple times. | 09-03-2015 |
20150246317 | METHOD FOR PRODUCING FILTRATION FILTER - Provided is a method for producing a filtration filter capable of purifying with high accuracy and largely improving filtration efficiency. A flow path forming film is formed on a substrate. A plurality of grooves is formed on the flow path forming film along a surface of the substrate by etching. The grooves are filled with a sacrificial film. The flow path forming film and the sacrificial film are planarized by polishing the sacrificial film. A flow path sealing film is formed on the planarized flow path forming film and sacrificial film. An inlet hole and an outlet hole are formed through the substrate and the flow path sealing film, respectively, so that parts of the sacrificial film are exposed through the inlet hole and the outlet hole. The sacrificial film is removed using the inlet hole and the outlet hole and the filtration flow paths are formed by the grooves. | 09-03-2015 |
20150245460 | PLASMA PROCESSING APPARATUS AND METHOD FOR PROCESSING OBJECT - A plasma processing apparatus includes a processing chamber including a sidewall; a mounting table including a lower electrode and provided in the processing chamber; an upper electrode arranged to face the lower electrode in a first direction; a high frequency power supply configured to apply a high frequency power for plasma generation to the upper electrode; a gas supply system for supplying a processing gas into the processing chamber; and a grounding unit connected to a ground potential. A first space is defined between the mounting table and the sidewall. A second space is defined between the upper electrode and the lower electrode. The grounding unit is configured to move independently from the upper electrode in the first direction in a third space which extends to the first space in the first direction and also to the second space in a second direction perpendicular to the first direction. | 08-27-2015 |
20150243541 | ELECTROSTATIC CHUCK, PLACING TABLE, PLASMA PROCESSING APPARATUS, AND METHOD OF MANUFACTURING ELECTROSTATIC CHUCK - Disclosed is an electrostatic chuck configured to hold a processing target object. The electrostatic chuck includes a dielectric substrate and a protective film. The substrate has a surface which is constituted by a bottom face, and a plurality of projecting portions. The plurality of projecting portions is formed to protrude from the bottom face. Each of the projecting portions includes a top face, and a side face. The top face comes in contact with the processing target object, and the side face extends from the bottom face to the top face. The protective film is made of yttrium oxide. The protective film is formed on the side faces of the plurality of projecting portions and the bottom face such that the top faces are exposed. | 08-27-2015 |
20150241787 | SUBSTRATE PROCESSING METHOD, PROGRAM, COMPUTER-READABLE STORAGE MEDIUM, AND SUBSTRATE PROCESSING SYSTEM - Provided is a substrate processing method in which a photolithography processing is performed on a wafer to form a resist pattern on the wafer. Ultraviolet ray is irradiated onto the resist pattern to cut side chains of the resist pattern to improve line edge roughness of the resist pattern. A processing agent is caused to enter the resist pattern and a metal is caused to be infiltrated into the resist pattern through the processing agent. Thereafter, the wafer is heated to vaporize the processing agent from the resist pattern to form a cured resist pattern. | 08-27-2015 |
20150240355 | VAPORIZER UNIT WITH OPEN CELL CORE AND METHOD OF OPERATING - A vaporizer for introducing a vapor-phase precursor into a substrate processing system, comprising: a vaporizer chamber having an vaporizer inlet, an vaporizer outlet, and a container wall extending between said vaporizer inlet and said vaporizer outlet and defining a vaporization volume there between, said container wall defining a lateral dimension of said vaporizer chamber; and at least one porous foam member arranged within said vaporizer chamber between said vaporizer inlet and said vaporizer outlet such that vapor flows through said at least one porous foam member, said at least one porous foam member in physical contact and thermal communication with said container wall, said at least one porous foam member having a thickness that is at least 10% said lateral dimension. The vaporizer chamber comprises an entrant chamber portion characterized by a diverging cross-sectional area with half angle of about 30-40 degrees and a vaporizer nozzle. | 08-27-2015 |
20150235862 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A semiconductor device manufacturing method for etching a multilayer film using a mask is provided. The method includes (a) supplying a first gas containing hydrogen, hydrogen bromide, nitrogen trifluoride and at least one of hydrocarbon, fluorocarbon and fluorohydrocarbon into the processing chamber and exciting the first gas to etch the multilayer film from a top surface of the multilayer film to a predetermined position in a stacked direction of the multilayer film; and (b) supplying a second gas that does not substantially contain hydrogen bromide and contains hydrogen and nitrogen trifluoride and at least one of Thydrocarbon, fluorocarbon and fluorohydrocarbon into the processing chamber and exciting the second gas to etch the multilayer film from the predetermined position of the multilayer film to a top surface of the etching stop layer. | 08-20-2015 |
20150235861 | PLASMA ETCHING METHOD AND PLASMA ETCHING APPARATUS - A plasma etching method includes a first process and a second process. In the first process, a hole is formed in a processing target film formed on a substrate accommodated within a processing chamber by performing an etching process of etching the processing target film. In the second process, a removing process, a deposition process and an extending process are repeatedly performed. In the removing process, a reaction product adhering to an inlet portion of the hole which is formed through the etching process is removed. In the deposition process, a deposit is deposited on a sidewall of the hole from which the reaction product is removed through the removing process. In the extending process, the hole, in which the deposit is deposited on the sidewall thereof through the deposition process, is deeply etched by performing the etching process. | 08-20-2015 |
20150235850 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS - A semiconductor device manufacturing method of the present invention includes forming a base film having a water-repellent surface on a substrate; forming a photosensitive film having a water-repellent surface on the base film; developing the photosensitive film to expose the base film, thereby forming a photosensitive film pattern; supplying a first spacer material on the photosensitive film and on the exposed base film; and removing at least a part of the first spacer material formed on a top surface of the photosensitive film and a top surface of the base film. | 08-20-2015 |
20150235809 | PLASMA PROCESSING APPARATUS AND FILTER UNIT - Provided is a plasma processing apparatus in which an external circuit is electrically connected, via a line, to a predetermined electric member within a processing container thereof, and noises of first and second high frequency waves are attenuated or blocked by a filter provided on the line when the noises enter the line from the electric member toward the external circuit. The filter includes: an air core coil provided at a first stage when viewed from the electric member side; a toroidal coil connected in series with the air core coil; an electroconductive casing configured to accommodate or enclose the air core coil and the toroidal coil; a first condenser electrically connected between a connection point between the air core coil and the toroidal coil and the casing; and a second condenser connected between a terminal of the toroidal coil at the external circuit side and the casing. | 08-20-2015 |
20150233412 | BOLT-LOCKING APPARATUS, MOUNTING METHOD THEREOF AND MOUNTING JIG - A bolt-locking apparatus includes a plurality of fitting members | 08-20-2015 |
20150232994 | PLATING APPARATUS, PLATING METHOD AND STORAGE MEDIUM - A plating apparatus can perform a plating process on an entire surface of a substrate uniformly. A plating apparatus | 08-20-2015 |
20150232993 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus of the present disclosure includes a placing table provided to be rotatable around an axis; a gas supplying section that supplies gas to regions through which a substrate sequentially passes while being moved in a circumferential direction with respect to the axis as the placing table is rotated; and a plasma generating section that generates plasma using the supplied gas. The plasma generating section includes an antenna that radiates microwaves, and a coaxial waveguide that supplies the microwaves to the antenna. Line segments constituting a plane shape of the antenna when viewed in a direction along the axis include two line segments which are spaced to be distant from each other as being spaced away from the axis. The coaxial waveguide supplies the microwaves to the antenna from a gravity center of the antenna. | 08-20-2015 |
20150228500 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - In a semiconductor device manufacturing method, a target object including a multilayer film and a mask formed on the multilayer film is prepared in a processing chamber of a plasma processing apparatus. The multilayer film is formed by alternately stacking a silicon oxide film and a silicon nitride film. The multilayer film is etched by supplying a processing gas containing hydrogen gas, hydrogen bromide gas, nitrogen trifluoride gas and at least one of hydrocarbon gas, fluorohydrocarbon gas and fluorocarbon gas into the processing chamber of the plasma processing apparatus and generating a plasma of the processing gas in the processing chamber. | 08-13-2015 |
20150228462 | PLASMA PROCESSING APPARATUS - In a plasma processing apparatus, a partition wall connects a mounting table and a bottom wall of a processing chamber. A power feed member is disposed within the space surrounded by the partition wall and connected to the mounting table. A driving frame extends into the space surrounded by the partition wall from the outside of the sidewall of the processing chamber to be connected to the bottom of the mounting table. A driving mechanism is disposed to the outside of the processing chamber to move the driving frame vertically. At the bottom of a gas exhaust space, an annular gas exhaust passageway is defined by the partition wall and the sidewall and bottom wall of the processing chamber. The gas exhaust unit is interconnected to the gas exhaust passageway through a gas exhaust port at the bottom wall of the processing chamber. | 08-13-2015 |
20150228459 | PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS - In a plasma processing apparatus of an exemplary embodiment, energy of microwaves is introduced from an antenna into the processing container through a dielectric window. The plasma processing apparatus includes a central introducing unit and a peripheral introducing unit. A central introduction port of the central introducing unit injects a gas just below the dielectric window. A plurality of peripheral introduction ports of the peripheral introducing unit injects a gas towards a periphery of the placement region. The central introducing unit is connected to with a plurality of first gas sources including a reactive gas source and a rare gas source through a plurality of first flow rate control units. The peripheral introducing unit is connected to with a plurality of second gas sources including a reactive gas source and a rare gas source through a plurality of second flow rate control units. | 08-13-2015 |
20150228457 | GAS SUPPLY METHOD AND PLASMA PROCESSING APPARATUS - In the present invention, a gas supply method includes a selecting step and an additive gas supply step. The selecting step involves selecting, in accordance with the type of target film to be processed, a combination of a gas chamber into which additive gas is supplied and the type of additive gas, the gas chamber being selected from a plurality of gas chambers which are divided from a gas injection unit for injecting plasma processing gases into a processing chamber in which a substrate formed with a processing target film is placed. In the additive gas supply step, the additive gas is supplied to the gas chamber on the basis of the combination selected in the selecting step. | 08-13-2015 |
20150227139 | CORRECTION VALUE COMPUTATION DEVICE, CORRECTION VALUE COMPUTATION METHOD, AND COMPUTER PROGRAM - A device for computing correction for control parameter in a manufacturing process executed on a manufacturing apparatus includes circuitry which acquires an index representing fluctuation in a manufacturing apparatus, acquires an apparatus model and a process model, acquires an output from a sensor in the manufacturing apparatus, transforms the output into first fluctuation for a process element, transforms the index into second fluctuation for the process element based on the apparatus model, computes fluctuation for performance indicator from the first and second fluctuation based on the process model, computes correction for the performance indicator from control range for the performance indicator and the fluctuation for the performance indicator, and converts the correction for the performance indicator into correction for each process element based on the process model such that correction for control parameter in process executed on the manufacturing apparatus is computed from the correction converted for each process element. | 08-13-2015 |
20150227047 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS - A manufacturing a semiconductor device of the present disclosure includes coating a photosensitive material on a workpiece; exposing the photosensitive material using a first exposure mask; performing a positive-tone development on the photosensitive material using a first developer after the first exposing; exposing the photosensitive material using a second exposure mask after the first developing; and performing a negative-tone development on the photosensitive material using a second developer after the second exposing. | 08-13-2015 |
20150225686 | METHOD FOR DETACHING CELLS FROM ADHESION SURFACE AND CELL DETACHMENT SYSTEM - A method for detaching cells from a cell culture surface includes irradiating visible light in an irradiation amount of 4 J or greater per 1 mm | 08-13-2015 |
20150221522 | PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS - A plasma processing method performs an etching process of supplying a fluorine-containing gas into a plasma processing space and etching a target substrate, in which a silicon oxide film or a silicon nitride film is formed on a surface of a nickel silicide film, with plasma of the fluorine-containing gas (process S | 08-06-2015 |
20150221478 | CAPACITIVE COUPLING PLASMA PROCESSING APPARATUS - A capacitive coupling plasma processing apparatus includes a process chamber configured to have a vacuum atmosphere, and a process gas supply section configured to supply a process gas into the chamber. In the chamber, a first electrode and a second electrode are disposed opposite each other. The second electrode includes a plurality of conductive segments separated from each other and facing the first electrode. An RF power supply is configured to apply an RF power to the first electrode to form an RF electric field within a plasma generation region between the first and second electrodes, so as to turn the process gas into plasma by the RF electric field. A DC power supply is configured to apply a DC voltage to at least one of the segments of the second electrode. | 08-06-2015 |
20150219994 | COATING AND DEVELOPING APPARATUS AND METHOD - In one embodiment, a coating and developing apparatus includes a processing block having two early-stage coating unit blocks, two later-stage coating unit blocks and two developing unit blocks, each unit blocks being vertically stacked on each other, The apparatus has at least two operation modes M | 08-06-2015 |
20150217294 | SEALED CONTAINER AND CELL TRANSFER SYSTEM - A sealed container device for hermetically accommodating cells includes a container body having an opening, a lid detachable from the opening of the container body, and a sealing structure positioned in gap formed between the container body and lid when the lid is inserted into the opening of the container body such that the sealing structure maintains sealed condition of the cells in the container body. The container body includes a step and a metal body positioned at the step such that the step is positioned to face peripheral edge of the lid on container-body side, and the lid includes a magnet positioned to face the metal body and a yoke structure movable relative to the magnet between a state where a magnetic circuit is formed between the magnet and the metal body and a state where the magnetic circuit is blocked. | 08-06-2015 |
20150214423 | METHOD FOR MANUFACTURING OPTICAL DEVICE AND OPTICAL DEVICE - A method for manufacturing an optical device includes forming a mask on main surface of a first GaN layer such that the mask has one or more openings in first region on the main surface of the first layer, selectively growing first GaN in the opening such that core including the first GaN is formed on exposed portion of the first layer, forming an active layer on the core such that active region is formed, forming a second GaN layer on the active region, removing a portion of the mask covering second region, forming a first electrode in the second region on the first layer, forming a second electrode covering the second layer and extending onto the mask in third region on the first layer, forming a first pad on the first electrode, and forming a second pad in a pad-forming region of the second electrode in the third region. | 07-30-2015 |
20150214088 | PICKUP METHOD AND PICKUP DEVICE - Disclosed is a pickup method in which a first suction unit is caused to approach and come into contact with a chip adhered to an adhesive sheet, and a second suction unit which is formed with a concavity on a contact surface configured to come into contact with the adhesive sheet is caused to approach and come into contact with the adhesive sheet in such a manner as to be opposite to the first suction unit. The adhesive sheet is sucked by the second suction unit that is in contact with the adhesive sheet, and a fluid is injected between the adhesive sheet and the chip by an injection unit. As a result, the adhesive sheet is detached from a portion of the chip opposite to the concavity, and in the state where the chip is being sucked by the first suction unit, the first suction unit is caused to be spaced away from the adhesive sheet that is being sucked by the second suction unit. In this manner, the chip is detached and picked up from the adhesive sheet. | 07-30-2015 |
20150214015 | FILM FORMING APPARATUS, METHOD OF FORMING LOW-PERMITTIVITY FILM, SiCO FILM, AND DAMASCENE INTERCONNECT STRUCTURE - In a film forming apparatus according to an embodiment, a processing container defines a space including a plasma generation chamber and a processing chamber disposed under the plasma generation chamber. A first gas supply system supplies noble gas to the plasma generation chamber. The plasma generation chamber is sealed by a dielectric window. An antenna supplies a microwave to the plasma generation chamber via the dielectric window. A second gas supply system supplies a precursor gas to the processing chamber. A shield portion is disposed between the plasma generation chamber and the processing chamber. The shield portion includes a plurality of openings providing communication between the plasma generation chamber and the processing chamber, and has ultraviolet ray shielding property. In this film forming apparatus, the pressure in the plasma generation chamber is set greater than the pressure in the processing chamber by a factor of 4 or more. | 07-30-2015 |
20150214011 | PLASMA PROCESSING APPARATUS AND HIGH FREQUENCY GENERATOR - Provided is a plasma processing apparatus that performs a processing on a processing target object using plasma. The plasma processing apparatus includes a processing container and a plasma generating mechanism including a high frequency generator disposed outside of the processing container to generate high frequency waves. The plasma generating mechanism generates plasma in the processing container using the high frequency waves and includes: a high frequency oscillator that oscillates the high frequency waves; a power supply unit that supplies a power to the high frequency oscillator; a waveguide path that propagates the high frequency waves oscillated by the high frequency oscillator to the processing container side which becomes a load side; and a voltage standing wave ratio variable mechanism that varies a voltage standing wave ratio of voltage standing waves formed in the waveguide path by the high frequency waves, according to the power supplied from the power supply unit. | 07-30-2015 |
20150211125 | PLASMA PROCESSING APPARATUS - Disclosed is provides a plasma processing apparatus that processes a workpiece. The plasma processing apparatus includes: a processing container configured to accommodate the workpiece; a coaxial waveguide configured to transmit microwaves generated in a microwave generator; and a slow wave plate configured to adjust a wavelength of the microwaves transmitted from the coaxial waveguide and to introduce the microwaves into the processing container. A lower end portion of an inner conductor of the coaxial waveguide has a tapered shape of which a diameter increases downwardly, the slow wave plate has an annular shape in a plan view, and the inner surface of the slow wave plate encloses the lower end portion of the inner conductor and is located more outside than an inner surface of an outer conductor of the coaxial waveguide in a radial direction. | 07-30-2015 |
20150211124 | FILM FORMING APPARATUS - Provided is a film forming apparatus including a placement stage; a processing container that defines a processing chamber which accommodates the placement stage and includes a first region and a second region; a gas supply section that supplies a precursor gas to the first region; and a plasma generation section that generates plasma of a reactive gas in the second region. The plasma generation section includes: at least one waveguide that defines a wave guiding path above the placement stage and above the second region, a microwave generator connected to the at least one waveguide, and a plurality of protrusions made of a dielectric material. The protrusions pass through a plurality of openings formed in a lower conductive part of the at least one waveguide to extend into the second region. The protrusions are arranged in a radial direction with respect an axis of the placement stage. | 07-30-2015 |
20150206763 | ETCHING METHOD, ETCHING APPARATUS, AND RING MEMBER - Etching is performed through the following process. A substrate is loaded into a processing chamber and mounted on a mounting table therein. Then, in the state where a ring member at least a surface of which is made of a same material as a main component of an etching target film is provided to surround the substrate, a processing gas is injected in a shower-like manner from a gas supply unit oppositely facing the substrate and the etching target film is etched by using a plasma of the processing gas; and evacuating the inside of the processing chamber through an exhaust path. Through this process, unbalanced distribution of plasma active species in the vicinity of a circumferential edge portion of the substrate can be suppressed. | 07-23-2015 |
20150206715 | PLASMA ETCHING METHOD AND PLASMA ETCHING APPARATUS - A plasma etching method includes a plasma process of plasma-processing a surface of a photoresist, which has a predetermined pattern with plasma generated from a hydrogen-containing gas. Further, the plasma etching method includes an etching process of etching a silicon-containing film with plasma generated from a CF-based gas and a gas containing a CHF-based gas by using the plasma-processed photoresist as a mask. Furthermore, in the plasma etching method, the plasma process and the etching process are repeated at least two or more times. | 07-23-2015 |
20150206712 | ANTENNA AND PLASMA PROCESSING APPARATUS - An antenna includes a dielectric window and a slot plate provided at one surface of the dielectric window. The slot plate includes a plurality of slot pairs each being formed of two slots. The slot pairs are concentrically disposed about a centroid position of the slot plate and provided at positions where straight lines extending from the centroid position of the slot plate and passing through each slot pair are not overlapped with each other. | 07-23-2015 |
20150203981 | COMPONENT OF SUBSTRATE PROCESSING APPARATUS AND METHOD FOR FORMING A FILM THEREON - A component of a substrate processing apparatus that performs plasma processing on a substrate includes a base mainly formed of an aluminum alloy containing silicon. A film is formed on the surface of the base by an anodic oxidation process which includes connecting the component to an anode of a power supply and immersing the component in a solution mainly formed of an organic acid. The film is impregnated with ethyl silicate. | 07-23-2015 |
20150201167 | FABRICATION EQUIPMENT MONITORING DEVICE AND MONITORING METHOD - A fabrication equipment monitoring device which monitors, by a server and a portable terminal capable of communicating with the server, specifies the fabrication equipment toward which image capture element is faced, extracts the fabrication equipment information of the specified fabrication equipment from the storage unit based on the location information acquired by the location information acquisition unit, a direction information detected by the direction detection unit, an angle of view of the image capture element and the layout information when the image capture element is faced toward the fabrication equipment and displays at least a portion of the extracted fabrication equipment information on the display unit. | 07-16-2015 |
20150197853 | SUBSTRATE PROCESSING APPARATUS - Provided is a substrate processing including: a plasma generation source configured to generate the plasma within the processing container; a substrate holding mechanism configured to hold the substrate within the processing container; a separation plate disposed between the plasma generation source and the substrate holding mechanism and having a plurality of openings formed therein, in which the plurality of openings are configured to neutralize the plasma generated in the plasma generation source so as to form neutral particles, and to irradiate the neutral particles onto the substrate; and a directivity adjusting mechanism configured to adjust directivity of the neutral particles irradiated onto the substrate such that a plurality of peak values of an incident angle distribution of the neutral particles on the substrate are distributed at positions which are deviated from a normal direction of the substrate and located on both sides of the normal direction. | 07-16-2015 |
20150194637 | METHOD FOR FORMING SILICON NITRIDE FILM, AND APPARATUS FOR FORMING SILICON NITRIDE FILM - Provided is a method for forming a silicon nitride film on a substrate accommodated in a processing container. The method includes: supplying a processing gas including a silane-based gas, nitrogen gas, and hydrogen gas or ammonia gas to the processing container; forming the silicon nitride film on the substrate by exciting the processing gas to generate plasma and performing a plasma processing by the plasma; and applying a bias electric field to a part of the silicon nitride film by intermittently performing an ON/OFF control of a high frequency power source during or after the forming of the silicon nitride film. | 07-09-2015 |
20150194441 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - Disclosed is method of manufacturing a semiconductor device. The method includes: forming an insulating film on one side of a substrate; forming a carbon film on the insulating film formed in the forming of the insulating film; forming an insulating film-carbon film laminate including a plurality of insulating films and carbon films alternately laminated on the one side of the substrate, by repeating the forming of the insulating film and the forming of the carbon film multiple times; removing the carbon films included in the insulating film-carbon film laminate; and forming electrode films in regions from which the carbon films are removed in the removing of the carbon films to obtain an insulating film-electrode film laminate in which the insulating films and the electrode films are laminated in a plurality of layers. | 07-09-2015 |
20150194330 | DE-CHUCK CONTROL METHOD AND PLASMA PROCESSING APPARATUS - A de-chuck control method is provided for de-chucking a workpiece from an electrostatic chuck that electrostatically attracts the workpiece. The de-chuck control method includes a discharge step of introducing an inert gas into a chamber after a plasma process and performing a discharge process; a high pressure step of introducing a gas having a lower ionization energy than helium gas after the discharge step, and maintaining a pressure within the chamber to a higher pressure than a pressure during the plasma process or a pressure during the discharge step; and a de-chuck step of de-chucking the workpiece from the electrostatic chuck with a support pin while the higher pressure is maintained by the high pressure step or after the higher pressure is maintained by the high pressure step. | 07-09-2015 |
20150194292 | PLASMA PROCESSING APPARATUS, ABNORMALITY DETERMINATION METHOD, AND MICROWAVE GENERATOR - Disclosed is a plasma processing apparatus including a processing container, a plasma generation mechanism, a regulation unit, a detection unit, and a determination unit. The plasma generation mechanism includes a microwave oscillator, and generates plasma within the processing container using microwaves oscillated by the microwave oscillator. The regulation unit regulates an oscillation frequency, which corresponds to a frequency of the microwaves oscillated by the microwave oscillator, to a predetermined frequency. The detection unit detects the oscillation frequency regulated to the predetermined frequency by the regulation unit. The determination unit determines the success/failure of regulation of the oscillation frequency by the regulation unit, using the oscillation frequency detected by the detection unit, or using a parameter which is changed depending on a difference between the oscillation frequency and the predetermined frequency. | 07-09-2015 |
20150194290 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus according to an exemplary embodiment includes a processing container that defines a processing space; an antenna provided above the processing space and including a disc-shaped wave guiding path around a predetermined axis and a metal plate defining the wave guiding path from a lower side; a microwave generator connected to the antenna and configured to generate microwaves; a stage provided in the processing container and facing the antenna across the processing space to intersect with the predetermined axis; and a heater configured to heat the metal plate. The metal plate includes a plurality of openings along a first circle around the predetermined axis and a second circle having a diameter larger than the first circle. The antenna includes a plurality of protrusions made of a dielectric material extending out into the processing space through the plurality of openings. The microwaves are introduced around the predetermined axis. | 07-09-2015 |
20150187582 | DOPING METHOD, DOPING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - Disclosed is a plasma doping apparatus and a plasma doping method for performing a doping on a processing target substrate by implanting dopant ions into the processing target substrate. The plasma doping method includes a plasma doping processing performed on the processing target substrate held on a holding unit within a processing container by generating plasma using a microwave. The plasma doping method also includes an annealing processing which is performed on the processing target substrate which has been subjected to the plasma doping processing. | 07-02-2015 |
20150185092 | HEAT-FLUX MEASURING METHOD, SUBSTRATE PROCESSING SYSTEM, AND HEAT-FLUX MEASURING MEMBER - In a heat-flux measuring method for measuring an ion flux of plasma generated in a substrate processing chamber using a heat flux, a heat-flux measuring member is exposed to the plasma and irradiatated with a low coherent light. The heat-flux measuring member has a three-layered structure in which a first length and a second length of optical paths of the low-coherent light in the first layer and the third layer are measured using optical interference of reflected lights from the heat-flux measuring member. Current temperatures of the first layer and the third layer are obtained based on the measured first length, the measured second length, and data representing thermal-optical path length relationship. A heat flux flowing through the heat-flux measuring member is calculated based on the obtained temperatures, and a thickness and a thermal conductivity of the second layer. | 07-02-2015 |
20150184293 | FILM FORMATION METHOD AND APPARATUS FOR SEMICONDUCTOR PROCESS - A film formation method performs a supply cycle of sequentially supplying two kinds of reactive gases inside a vacuum container to form a thin film on the substrate. The method includes placing the substrate, including a depressed portion formed thereon, on a table, then adjusting a temperature of the substrate to a temperature at which a first reactive gas is adsorbed and condensed, then supplying the first reactive gas and thereby depositing a condensed substance of the first reactive gas on the substrate, then rotating the table, then partly vaporizing the condensed substance by supplying a heated gas to the substrate; and then supplying a second reactive gas in an activated state to the substrate and thereby causing the second reactive gas to react with the condensed substance. | 07-02-2015 |
20150179466 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - Provided is a method of manufacturing a semiconductor device. The method includes providing an object to be processed including a multilayer film formed by alternately laminating a first film and a second film having different dielectric coefficients within a processing container of a plasma processing apparatus; and repeatedly performing a sequence including: supplying a first gas including O | 06-25-2015 |
20150179451 | METHOD FOR PROCESSING GRAPHENE, METHOD FOR PRODUCING GRAPHENE NANORIBBONS, AND GRAPHENE NANORIBBONS - A gas comprising H | 06-25-2015 |
20150179407 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - Disclosed is a plasma processing method for generating plasma between an upper electrode connected with a VF power supply and a susceptor disposed to face the upper electrode to perform a plasma processing on a wafer by the plasma. The plasma processing method includes: providing an auxiliary circuit configured to reduce a difference between a reflection minimum frequency of a first route where a high frequency current generated from the VF power supply flows before ignition of the plasma and a reflection minimum frequency of a second route where the high frequency current generated from the VF power supply flows after the ignition of the plasma; igniting the plasma; and maintaining the plasma. | 06-25-2015 |
20150179405 | UPPER ELECTRODE AND PLASMA PROCESSING APPARATUS - In an exemplary embodiment, an upper electrode is disposed in a processing chamber to face a susceptor and provided with a plate-like member and an electrode part. In an exemplary embodiment, the plate-like member is formed with a gas distribution hole that distributes a processing gas used for a plasma processing. The electrode part is formed in a film shape by thermally spraying silicon onto a surface of the plate-like member where an outlet of the gas distribution hole is formed. | 06-25-2015 |
20150176974 | APPARATUS AND METHOD FOR MEASURING THICKNESS AND TEMPERATURE AND SUBSTRATE PROCESSING SYSTEM - An apparatus for measuring a thickness or wear amount and a temperature of the ceramic member by using a terahertz wave includes a terahertz wave generating unit configured to output a terahertz wave, a terahertz wave analysis unit configured to analyze a terahertz wave and an optical system configured to guide the terahertz wave output from the terahertz wave generating unit to the ceramic member and guide reflected waves of the terahertz wave reflected from the ceramic member to the terahertz wave analysis unit. The terahertz wave analysis unit obtains an optical path difference between a first reflection wave reflected from a front surface of the ceramic member and a second reflection wave reflected from a rear surface of the ceramic member and measures a thickness of the ceramic member based on the optical path difference. | 06-25-2015 |
20150176125 | SUBSTRATE PROCESSING APPARATUS - Disclosed is a substrate processing apparatus for processing a processing target object by a processing gas. The substrate processing apparatus includes: a processing container configured to accommodate the processing target object; a mounting unit provided within the processing container to place the processing target object thereon; a processing gas supply unit provided in a side wall of the processing container to supply the processing gas into the processing container; and a processing gas diffusion mechanism provided outside the processing gas supply unit. The processing gas diffusion mechanism includes a first diffusion chamber and a second diffusion chamber which are provided in multiple stages, and the first diffusion chamber is located above the second diffusion chamber, and the first diffusion chamber and the second diffusion chamber communicate with each other through a plurality of processing gas communication paths. | 06-25-2015 |
20150162233 | METHOD FOR CALCULATING DISTANCE, METHOD FOR NEUTRALIZING ELECTROSTATIC CHUCK, AND PROCESSING APPARATUS - There are provided a method for obtaining a distance between a base portion of an electrostatic chuck and a back surface of a target object and a method for neutralizing the electrostatic chuck based on the obtained distance. The electrostatic chuck has an upper surface including the base portion and a plurality of convex portions projecting from the base portion. The target object is mounted on apexes of the convex portions of the electrostatic chuck such that the back surface is in contact with the apexes. By processing a first wavelength spectrum output from a spectroscope based on reflected light of light emitted from a light source, a distance between the back surface of the target object and the base portion of the electrostatic chuck is calculated. Based on the calculated distance, a voltage is applied to the electrostatic chuck to neutralize the electrostatic chuck. | 06-11-2015 |
20150162223 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - There are provided a substrate processing apparatus and a substrate processing method realizing an effective reduction of a voltage change of a substrate on an electrode to reduce the variation of incident energy of ions entering the substrate. The substrate processing apparatus includes: a first electrode holding a substrate on a main surface of the first electrode; a second electrode facing the first electrode; a RF power source applying to the first electrode a RF voltage whose frequency is equal to or higher than 40 MHz; and a pulse voltage applying unit applying to the first electrode a pulse voltage decreasing in accordance with a lapse of time, by superimposing the pulse voltage on the RF voltage. | 06-11-2015 |
20150162203 | METHOD FOR ETCHING SILICON LAYER AND PLASMA PROCESSING APPARATUS - Disclosed is a method of etching a silicon layer by removing an oxide film formed on a workpiece which includes the silicon layer and a mask provided on the silicon layer. The method includes: (a) forming a denatured region by generating plasma of a first processing gas containing hydrogen, nitrogen, and fluorine within a processing container accommodating the workpiece therein to denature an oxide film formed on a surface of the workpiece; (b1) removing the denatured region by generating plasma of a rare gas within the processing container; and (c) etching the silicon layer by generating plasma of a second processing gas within the processing container. | 06-11-2015 |
20150162193 | PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS - Disclosed is a plasma processing method including: growing a polycrystalline silicon layer on a processing target base body; and exposing the polycrystalline silicon layer to hydrogen radicals by supplying a processing gas containing hydrogen into a processing container that accommodates the processing target base body including the polycrystalline silicon layer grown thereon and radiating microwaves within the processing container to generate the hydrogen radicals. | 06-11-2015 |
20150161520 | SYSTEM AND METHOD FOR LEARNING AND/OR OPTIMIZING MANUFACTURING PROCESSES - A system and method for learning and/or optimizing processes related to semiconductor manufacturing is provided. A learning component generates a set of candidate process models based on process data associated with one or more fabrication tools. The learning component also selects a particular process model from the set of candidate process models that is associated with lowest error. An optimization component generates a set of candidate solutions associated with the particular process model. The optimization component also selects a particular solution from the set of candidate solutions based on a target output value and an output value associated with the particular solution. | 06-11-2015 |
20150158242 | IMPRINT DEVICE AND TEMPLATE - An imprint device includes a template provided with a plate-shaped template body and a pattern portion having a predetermined shape formed on a surface of the template body; a template holding mechanism configured to hold the template; a substrate holding mechanism configured to hold a substrate formed with a resin layer made of a photo-curable resin in a state where the pattern portion of the template and the resin layer are in contact with each other; and a light irradiating mechanism configured to irradiate a light in a wavelength range for curing the photo-curable resin. The template allows the light to be incident from a lateral surface of the template body, and the light irradiating mechanism irradiates the light to the resin layer by allowing the light to be incident from the lateral surface of the template body and transmitted through the template body. | 06-11-2015 |
20150155141 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus of the present disclosure includes a processing container provided with an opening to carry an object to be processed (“workpiece”) into or out of a chamber adjacent to the processing container; a microwave introducing mechanism configured to introduce microwaves into the processing container; an exhaust device configured to evacuate the processing container; and a thermal insulating member provided between an outer surface of a gate valve that is provided near the opening and the chamber adjacent to the processing container. The thermal insulating member is coated with a conductive film at least on a surface of the thermal insulating member facing the outer surface of the gate valve, a surface of the thermal insulating member facing the chamber adjacent to the processing container, and a surface of the thermal insulating member exposed to outer air. | 06-04-2015 |
20150155139 | DIELECTRIC WINDOW, ANTENNA AND PLASMA PROCESSING APPARATUS - A slot plate is provided at one surface of a dielectric window. The other surface of the dielectric window includes a flat surface surrounded by an annular first recess, and a plurality of second recesses formed at a bottom surface of the first recess. An antenna including the dielectric window and the slot plate provided at one surface of the dielectric window can be applied to the plasma processing apparatus. | 06-04-2015 |
20150152557 | Film Forming Method and Film Forming Device | 06-04-2015 |
20150151227 | FILTER DEVICE - A filter device includes a housing having space, a filter in the space of the housing, a first joint connected to a first port of the housing and having an open end which connects to a supply path of a processing liquid, a second joint connected to a second port of the housing and having an open end which connects to the path, and an exhaust joint connected to an exhaust port of the housing and having an open end which connects to an exhaust path. The first and second ports introduce or discharge the liquid and have openings to the opposite end portions of the space, respective, the filter is intersecting a straight line passing through the centers of the first and second ports, and the first, the second and exhaust joints are formed to extend in the same direction outside the space of the housing. | 06-04-2015 |
20150144595 | GAS CLUSTER IRRADIATION MECHANISM, SUBSTRATE PROCESSING APPARATUS USING SAME, AND GAS CLUSTER IRRADIATION METHOD - A gas cluster irradiation mechanism includes at least one nozzle unit having a plurality of gas injection nozzles, and a gas supply unit for supplying the gas to the nozzle unit. The plurality of the gas injection nozzles is set such that when the gas is supplied from the gas injection nozzles at a preset flow rate a pressure in the processing chamber remains below a limit at which the gas cluster begins to be destroyed. Further, the gas injection nozzles are arranged with a preset interval between neighboring gas injection nozzle such that respective areas in which residual gas from the neighboring gas injection nozzles spreads do not overlap with each other, the residual gas being part of the gas injected from the gas injection nozzles and not contributing to generation of the gas cluster. | 05-28-2015 |
20150144265 | PLASMA PROCESSING APPARATUS AND MICROWAVE INTRODUCTION DEVICE - A plasma processing apparatus includes a microwave introduction device which introduces a microwave into a process chamber. The microwave introduction device includes a plurality of microwave transmitting plates which is fitted into a plurality of openings of a ceiling. The microwave transmitting plates are arranged on one virtual plane parallel to a mounting surface of a mounting table, with the microwave transmitting plates fitted into the respective openings. The microwave transmitting plates includes first to third microwave transmitting plates. The first to third microwave transmitting plates are arranged in such a manner that a distance between the center point of the first microwave transmitting window and the center point of the second microwave transmitting window becomes equal or approximately equal to a distance between the center point of the first microwave transmitting window and the center point of the third microwave transmitting window. | 05-28-2015 |
20150140822 | MULTILAYER FILM ETCHING METHOD AND PLASMA PROCESSING APPARATUS - In one embodiment of the present invention, there is provided a method for etching a multilayer film formed by laminating a plurality of alternating layers of a first layer having a first dielectric constant and a second layer having a second dielectric constant. This method includes (a) a multilayer film etching step, in which an etchant gas is supplied into a processing chamber and a microwave is supplied into the processing chamber to excite a plasma of the etchant gas; and (b) a resist mask reducing step in which an oxygen-containing gas and a fluorocarbon-based gas are supplied to the processing chamber and a microwave is supplied into the processing chamber to excite a plasma of the oxygen-containing gas and the fluorocarbon-based gas. In this method, the steps (a) and (b) are alternately repeated. | 05-21-2015 |
20150139758 | SUBSTRATE CONVEYANCE METHOD, AND SUBSTRATE CONVEYANCE DEVICE - The purpose of the present invention is to accurately deal with a variety of processing conditions and variations thereof, and to improve total throughput by efficiently operating a conveyance arm device in accordance with the processing conditions, even during cleaning. When a first wafer is loaded on a load-lock chamber, a conveyance-sequence category for operating each of a number of steps for a conveyance arm device capable of operating during cleaning is selected in accordance with processing conditions of the wafer, and a plurality of operation patterns are selected, combined and scheduled. The conveyance arm device is controlled in accordance with the scheduled conveyance sequence to control substrate conveyance. | 05-21-2015 |
20150136596 | MAGNETRON SPUTTERING DEVICE, MAGNETRON SPUTTERING METHOD, AND NON-TRANSITORY COMPUTER-READABLE STORAGE MEDIUM - A magnetron sputtering apparatus includes a target disposed to face a substrate mounted on a mounting part in a vacuum vessel and a magnet arrangement assembly installed at a back side of the target and having an array of magnets, the magnetron sputtering apparatus including: a gas supply part configured to supply a plasma generation gas into the vacuum vessel; a rotary mechanism configured to rotate the mounting part; a power supply part configured to apply a voltage to the target; a moving mechanism configured to move the magnet arrangement assembly between a first region and a second region; and a control unit configured to output a control signal, such that an average moving speed of the magnet arrangement assembly is different between the first region and the second region. | 05-21-2015 |
20150132970 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - An apparatus for processing reaction products that are deposited when an etching target film contained in a target object to be processed is etched is provided with: a processing chamber; a partition plate; a plasma source; a mounting table; a first processing gas supply unit; a second processing gas supply unit. The processing chamber defines a space, and the partition plate is arranged within the processing chamber and divides the space into a plasma generating space and a substrate processing space, while suppressing permeation of ions and vacuum ultraviolet rays. The plasma source generates a plasma in the plasma forming space. The mounting table is arranged in the substrate processing space to mount the target object thereon. | 05-14-2015 |
20150132960 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - A substrate processing apparatus that can appropriately carry out desired plasma processing on a substrate. The substrate is accommodated in an accommodating chamber. An ion trap partitions the accommodating chamber into a plasma producing chamber and a substrate processing chamber. High-frequency antennas are disposed in the plasma producing chamber. A process gas is introduced into the plasma producing chamber. The substrate is mounted on a mounting stage disposed in the substrate processing chamber, and a bias voltage is applied to the mounting stage. The ion trap has grounded conductors and insulating materials covering surfaces of the conductors. | 05-14-2015 |
20150132929 | METHOD FOR INJECTING DOPANT INTO SUBSTRATE TO BE PROCESSED, AND PLASMA DOPING APPARATUS - Provided is a method for injecting a dopant into a substrate to be processed. A method in one embodiment of the present invention includes: (a) a step for preparing, in a processing container, a substrate to be processed; and (b) a step for injecting a dopant into the substrate by supplying a doping gas containing AsH | 05-14-2015 |
20150132863 | PLASMA PROCESSING APPARATUS AND HEATER TEMPERATURE CONTROL METHOD - A plasma processing apparatus is provided that converts a gas into plasma using a high frequency power and performs a plasma process on a workpiece using an action of the plasma. The plasma processing apparatus includes a processing chamber that can be depressurized, a mounting table that is arranged within the processing chamber and holds the workpiece, an electrostatic chuck that is arranged on the mounting table and electrostatically attracts the workpiece by applying a voltage to a chuck electrode, a heater arranged within or near the electrostatic chuck, and a temperature control unit. The heater is divided into a circular center zone, at least two middle zones arranged concentrically at an outer periphery side of the center zone, and an edge zone arranged concentrically at an outermost periphery. The temperature control unit adjusts a control temperature of the heater with respect to each of the zones. | 05-14-2015 |
20150130489 | SUBSTRATE INSPECTION APPARATUS - A probe apparatus | 05-14-2015 |
20150129134 | PLACEMENT TABLE AND PLASMA PROCESSING APPARATUS - A placement table includes: a base; an electrostatic chuck disposed on the base and including a placement surface on which a workpiece is placed; a plurality of heat generating members disposed at a side opposite to the placement surface of the electrostatic chuck; a power supply configured to generate a current for causing each of the plurality of heat generating members to generate heat; a plurality of electric wires installed to extend in a direction crossing the placement surface from the plurality of heat generating members, respectively, and configured to connect the power supply with the heat generating members, respectively; and a filter mounted on each of the plurality of electric wires to remove a high frequency component having a frequency higher than that of the current generated by the power supply. | 05-14-2015 |
20150129129 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a process chamber including a sidewall, a mounting table disposed in the process chamber, a shield member which is disposed along the inner surface of the sidewall to surround the mounting table and has an opening facing the transfer port, and a shutter configured to open/close the opening, the shutter being movable up and down. The shutter has a first portion adapted to face the opening, and a second portion adapted to face the shield member at a lower side of the shield member. The shield member has a lower portion including a contact surface facing the second portion. A contactor adapted to contact the contact surface is disposed at the second portion. The first portion of the shutter closes the opening through a gap between the first portion and the shield member. The contact surface and the contactor are formed of HASTELLOY®. | 05-14-2015 |
20150128995 | SUBSTRATE CLEANING METHOD, SUBSTRATE CLEANING SYSTEM, AND MEMORY MEDIUM - A method for cleaning a substrate, includes supplying to a substrate having a hydrophilic surface a film-forming processing liquid which includes a volatile component and forms a film on the substrate, vaporizing the volatile component in the film-forming processing liquid such that the film-forming processing liquid solidifies or cures on the substrate and forms a processing film on the hydrophilic surface of the substrate, and supplying to the substrate having the processing film a strip-processing liquid for stripping the processing film from the substrate. | 05-14-2015 |
20150128994 | SUBSTRATE CLEANING METHOD, SUBSTRATE CLEANING SYSTEM, AND MEMORY MEDIUM - A method for cleaning a substrate includes supplying to a substrate a film-forming processing liquid which includes a volatile component and forms a film on the substrate, vaporizing the volatile component in the film-forming processing liquid such that the film-forming processing liquid solidifies or cures on the substrate and forms a processing film on the substrate, supplying to the substrate having the processing film a strip-processing liquid which strips the processing film from the substrate, and supplying to the processing film formed on the substrate a dissolving-processing liquid which dissolves the processing film after the supplying of the strip-processing liquid. | 05-14-2015 |
20150126033 | METHOD FOR DEEP SILICON ETCHING USING GAS PULSING - Techniques disclosed herein include methods for etching deep silicon features using a continuous gas pulsing process that etches high aspect ratio features having a relatively smooth profile. Such methods provide an etch rate faster than time-multiplexed etch-deposition processes. Techniques include using a continuous process that comprises a cyclic gas-pulsing process of alternating chemistries. One process gas mixture includes a halogen-containing silicon gas and oxygen that creates an oxide layer. A second process gas mixture includes a halogen-containing gas and a fluorocarbon gas that etches oxide and silicon. | 05-07-2015 |
20150114930 | PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS - A plasma processing method of the present disclosure includes attaching a Si-containing material or a N-containing material to an electrostatic chuck that is provided in a processing container and attached with a reaction product containing C and F, in a state where a workpiece is not mounted on the electrostatic chuck; adsorbing the workpiece by the electrostatic chuck attached with the Si-containing material or the N-containing material when the workpiece is carried into the processing container; processing the workpiece with plasma; and separating the workpiece processed with plasma from the electrostatic chuck attached with the Si-containing material or the N-containing material. | 04-30-2015 |
20150114567 | FOCUS RING AND PLASMA PROCESSING APPARATUS - A focus ring to be detachably attached to a top surface of an outer peripheral portion of a mounting table in a processing chamber, includes: an annular main body having a back surface to be attached to the top surface of the outer peripheral portion of the mounting table. And a thermally conductive sheet fixed to the annular main body, the thermally conductive sheet being interposed between the annular main body and the top surface of the outer peripheral portion of the mounting. The thermally conductive sheet is fixed as one unit to the annular main body by coating an unvulcanized rubber on one surface of the thermally conductive sheet, bringing said one surface into contact with the annular main body, and heating the thermally conductive sheet and the annular main body to vulcanize and to adhere the thermally conductive sheet to the annular main body. | 04-30-2015 |
20150114564 | SUBSTRATE PROCESSING APPARATUS AND SHUTTER MEMBER - In a substrate processing apparatus of the present disclosure, a bearing member includes a decaying mechanism provided with a connecting shaft inserted therein and configured to decay radicals or ions; a first member configured to cover the decaying mechanism; and a second member disposed at the connecting shaft and provided with the connecting shaft inserted therein while being in contact with a sealing member. Further, an end of the first member and an end of the second member are connected to be engaged with each other, an invasion path is formed to allow the radicals to invade from the connected portion of the end of the first member and the end of the second member, and the invasion path is formed to be folded back in an extending direction of the connecting shaft. The sealing member is made of a material having a tensile strength larger than 12.1 MPa. | 04-30-2015 |
20150114562 | SUBSTRATE PROCESSING APPARATUS - Any particle adhesion onto the surface of a substrate to be processed is prevented. There is provided a substrate processing apparatus characterized by including a transfer chamber for, via a gate to which a substrate accommodating container for accommodation of the substrate is set, performing transfer of the substrate between the same and the substrate accommodating container, a processing chamber for applying a specific process to the substrate, a load-lock chamber for linking the processing chamber with the transfer chamber, and a temperature control unit for at the stage of transferring the substrate into at least one of the transfer chamber and the load-lock chamber, so as for the temperature of the substrate just before the transfer thereof to be higher than the temperature of the interior of the chamber, into which the substrate will be transferred, controlling at least one of the temperature of the substrate and the temperature of the interior of the chamber. | 04-30-2015 |
20150110973 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus of the present disclosure includes a processing container configured to accommodate a wafer; a placing unit provided on a bottom surface of the processing container to place the wafer thereon; a first processing gas supply pipe provided in a central portion of a ceiling of the processing container to supply a first processing gas into the processing container; a second processing gas supply pipe provided in a side wall of the processing container to supply a second processing gas into the processing container; a rectifying gas supply pipe provided in the side wall of the processing container above the second processing gas supply pipe to supply a rectifying gas downward into the processing container; and a radial line slot antenna configured to radiate microwave into the processing container. | 04-23-2015 |
20150109716 | PLASMA PROCESSING APPARATUS, POWER SUPPLY UNIT AND MOUNTING TABLE SYSTEM - A plasma processing apparatus includes a mounting table including a lower electrode and an electrostatic chuck, a high frequency power supply electrically connected to the lower electrode, a heater provided in the electrostatic chuck, a heater power supply for supplying a power to the heater, a filter unit including a filter connected to the heater power supply, a rod-shaped power feeder connecting the heater power supply and the heater via the filter, an insulating tubular portion having an inner hole through which the power feeder extends, and a conductive choke portion serving to suppress a microwave propagating through the tubular portion. The choke portion includes a first portion extending from the power feeder in a direction intersecting with a longitudinal direction of the power feeder and a cylindrical second portion extending, between the tubular portion and the power feeder, from a peripheral portion of the first portion. | 04-23-2015 |
20150108897 | MICROWAVE PLASMA PROCESSING APPARATUS AND MICROWAVE SUPPLY METHOD - Disclosed is a microwave plasma processing apparatus including: a processing container configured to define a processing space a microwave generator configured to generate microwaves for generating plasma of a processing gas introduced into the processing space, a distributor configured to distribute the microwaves to a plurality of waveguides using a variable distribution ratio, an antenna installed in the processing container to seal the processing space and configured to radiate the microwaves distributed to each of the plurality of waveguides by the distributor to the processing space, a monitor unit configured to monitor a power of the microwaves distributed to each of the plurality of waveguides by the distributor, and a distribution ratio control unit configured to correct the distribution ratio used for distribution of the microwaves by the distributor based on a difference between a ratio of the power of the microwaves monitored by the monitor unit and a previously designated distribution ratio. | 04-23-2015 |
20150108001 | LIQUID PROCESSING JIG AND LIQUID PROCESSING METHOD - Disclosed is a liquid processing jig for performing a predetermined processing on a workpiece using a processing liquid. The liquid processing jig includes: a liquid processing unit formed on a surface of the liquid processing jig and configured to perform a predetermined processing on the workpiece by the processing liquid; a liquid supplying unit configured to supply the processing liquid to the liquid processing unit; a liquid supplying channel configured to connect the liquid supplying unit and the liquid processing unit and supply the processing liquid from the liquid supplying unit to the liquid processing unit; and a liquid discharging channel configured to discharge the processing liquid from the liquid processing unit. The liquid supplying unit, the liquid supplying channel, the liquid processing unit, and the liquid discharging channel are provided to cause the processing liquid to flow by a capillary phenomenon. | 04-23-2015 |
20150107773 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus for exciting a processing gas by a microwave, includes a focus ring extending in an annular shape, a first tubular member being wrapped around a central axis to extend along an outer periphery of the lower electrode below the focus ring, an annular member made of a dielectric material provided between the focus ring and the first tubular member a second tubular member extending along an outer periphery of the first tubular member and a choke portion suppressing a microwave propagating through the first tubular member via the focus ring and the annular member. And the choke portion protrudes outward in a diametrical direction of the first tubular from the outer periphery of the first tubular member and extends in an annular shape along the periphery of the first tubular member, the choke portion is covered by the second tubular member. | 04-23-2015 |
20150107772 | GAS SUPPLY DEVICE AND SUBSTRATE PROCESSING APPARATUS - A shower head | 04-23-2015 |
20150107771 | TRAP APPARATUS AND SUBSTRATE PROCESSING APPARATUS - A trap apparatus includes: a first cylindrical member including a space; a second cylindrical member removably disposed in the space and including side opening which allows a gas stream to flow in therethrough, and a downstream side opening which allows the gas stream flowing in from the upstream side opening to flow out therethrough; a downstream side trap member which is disposed inside the second cylindrical member to block the downstream side opening; and an upstream side trap member which is disposed between the downstream side trap member and the upstream side opening of the second cylindrical member and includes a concave portion recessed in a direction approaching the downstream side trap member. | 04-23-2015 |
20150104957 | RESIST MASK PROCESSING METHOD - A method for processing a resist mask includes: (a) a step of preparing, in a processing chamber, a target object to be processed having a patterned resist mask provided thereon; and (b) a step of generating a plasma of the hydrogen-containing gas by supplying a hydrogen-containing gas and supplying a microwave into the processing chamber. The hydrogen-containing gas may be, e.g., H | 04-16-2015 |
20150104951 | METHOD FOR ETCHING COPPER LAYER - Provided is a method of etching a copper layer. The method includes generating plasma of a processing gas within a processing container which accommodates an object to be processed that includes the copper layer and a metal mask formed on the copper layer. The metal mask contains titanium. In addition, the processing gas includes CH | 04-16-2015 |
20150099366 | PLASMA ETCHING METHOD - Provided is a plasma etching method capable of favorably forming masks used when etching a multilayer film. This plasma etching method for etching boron-doped amorphous carbon involves using a plasma of a gas mixture comprising a chlorine gas and an oxygen gas, and setting the temperature of a mounting stage ( | 04-09-2015 |
20150093886 | PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS - A plasma processing method of one embodiment of the present invention is disclosed for growing a polycrystalline silicon layer on a base material to be processed. The plasma processing method includes: (a) a step for preparing, in a processing container, the base material to be processed; and (b) a step for growing the polycrystalline silicon layer on the base material by introducing microwaves for plasma excitation into the processing container, and introducing a silicon-containing raw material gas into the processing container. | 04-02-2015 |
20150090692 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus and a plasma processing method are provided which can sufficiently suppress an abnormal discharge in a gas space. A plasma processing apparatus includes a high frequency power source connected between a processing chamber and a base stand; a gas storage unit provided within the base stand and configured to store a gas; a blocking mechanism configured to block a gas introducing port of the gas storage unit; and a connection unit configured to connect a space between a disposition position of a wafer and the base stand, to the gas storage unit. | 04-02-2015 |
20150090340 | PROCESSING-LIQUID SUPPLY APPARATUS AND PROCESSING-LIQUID SUPPLY METHOD - A processing-liquid supply apparatus includes a source, a discharge device, a supply channel connecting the source and discharge device, a filter device positioned in the channel to form first side having the source and second side having the discharge device, a pump device positioned in the channel, and a control device which controls suction and discharge by the pump device. The control device controls the pump device such that the liquid is discharged from the discharge device, that remaining of the liquid on the second side is suctioned to be returned to the first side and that the remaining of the liquid returned to the first side flows from the first toward second side together with refill of the liquid from the source, and the control device is set such that return amount of the liquid to the filter device is equal to or greater than amount of the discharge. | 04-02-2015 |
20150088440 | SOLAR POWER GENERATION MONITORING METHOD AND SOLAR POWER GENERATION MONITORING SYSTEM - A method for monitoring solar power generation includes calculating a cable loss, calculating a maximum power point tracking loss, calculating an inverter loss, calculating a system output coefficient, performing comprehensive calculation based on a rated output power of a solar cell array, a temperature coefficient of the solar cell array, a numerical value of a voltage-current measuring device, a numerical value of a actinometer, a numerical value of a thermometer and a numerical value of a AC power meter such that a module temperature loss is calculated, performing comprehensive calculation based on the cable loss, the maximum power point tracking loss, the inverter loss, the system output coefficient and the module temperature loss such that a module loss is calculated, and displaying and monitoring the cable loss, the maximum power point tracking loss, the inverter loss, the module temperature loss and the module loss. | 03-26-2015 |
20150087162 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus includes: a processing container which defines a processing space; a microwave generator; a dielectric having an opposing surface which faces the processing space; a slot plate formed with a plurality of slots; and a heating member provided within the slot plate. The slot plate is provided on a surface of the dielectric at an opposite side to the opposing surface to radiate microwaves for plasma excitation to the processing space through the dielectric based on the microwaves generated by the microwave generator. | 03-26-2015 |
20150087140 | FILM FORMING METHOD, FILM FORMING DEVICE, AND FILM FORMING SYSTEM - A film forming method according to an embodiment includes: (a) a step of supplying a first precursor gas of a semiconductor material into a processing vessel in which a processing target substrate is disposed, the first precursor gas being adsorbed onto the processing target substrate during the step; (b) a step of supplying a second precursor gas of a dopant material into the processing vessel, the second precursor gas being adsorbed onto the processing target substrate during the step; and (c) a step of generating the plasma of a reaction gas in the processing vessel, a plasma treatment being performed during the step so as to modify a layer adsorbed onto the processing target substrate. | 03-26-2015 |
20150086302 | SUBSTRATE PROCESSING APPARATUS AND MAINTENANCE METHOD THEREOF - A substrate processing apparatus includes: a first processing chamber; a second processing chamber; a transfer chamber; a frame structure; and an elevating part. Each of the first and the second processing chamber has a main body part and a lid part. The transfer chamber is connected to the first and the second processing chamber and accommodates a transfer unit for transferring the substrate. The frame structure has a pair of column parts and a beam part supported at top portions of the column parts. The elevating part is coupled to the beam part to be moved in a horizontal direction and moves the lid part in the vertical direction. The beam part extends above the first and the second processing chamber and the transfer chamber. | 03-26-2015 |
20150084772 | SYSTEM FOR MONITORING FAILURE OF SUBSTRATE PROCESSING APPARATUS, AND METHOD FOR MONITORING FAILURE OF SUBSTRATE PROCESSING APPARATUS - Disclosed is a failure monitoring system for monitoring a failure of a substrate processing apparatus that performs a predetermined processing on a substrate to be processed, the failure monitoring system including: an alarm collecting unit configured to collects alarms issued from the substrate processing apparatus; and an analyzing unit configured to analyze the alarms collected by the alarm collecting unit and display, as an image, an alarm issuing frequency in each monitoring period on a two-dimensional space, of which one axis represents an alarm ID that specifies an alarm issuing area and another axis represents a predetermined monitor period. | 03-26-2015 |
20150083580 | PLASMA PROCESSING METHOD - A method includes: etching a target layer of a target object in a processing chamber by generating a plasma of a first gas containing at least one of SF | 03-26-2015 |
20150083333 | PLASMA PROCESSOR AND PLASMA PROCESSING METHOD - An etching chamber | 03-26-2015 |
20150083332 | PLASMA PROCESSOR AND PLASMA PROCESSING METHOD - An etching chamber | 03-26-2015 |
20150079790 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - This semiconductor device manufacturing method is provided with: a film-forming step wherein a silicon nitride layer or a silicon oxide layer is formed such that a side wall portion of a silicon-containing layer, which is formed on a substrate and patterned, is covered with the silicon nitride layer or the silicon oxide layer; and a plasma etching step wherein the silicon-containing layer is selectively removed, and the silicon nitride layer or the silicon oxide layer formed on the side wall portion is left. In the plasma etching step, an etching gas containing SF | 03-19-2015 |
20150076707 | INTEGRATED CIRCUIT VIA STRUCTURE AND METHOD OF FABRICATION - A method for creating one or more vias in an integrated circuit structure and the integrated circuit structure. The method includes depositing a coating layer over a hard mask layer on the integrated circuit structure; locating an initial via pattern layer over the coating layer; and etching the pattern of the one or more initial openings in the coating layer and through openings in the hard mask layer. The coating layer is a conformal deposition of an oxide, a boron nitride, or other nitride. The initial via pattern layer has one or more initial openings located therein. | 03-19-2015 |
20150075566 | METHOD OF CONTROLLING ADHERENCE OF MICROPARTICLES TO SUBSTRATE TO BE PROCESSED, AND PROCESSING APPARATUS - A method of controlling adherence of microparticles to a substrate to be processed includes applying voltage to an electrostatic chuck configured to electrostatically attract the substrate to be processed in a processing container before the substrate to be processed is carried into the processing container; and, after the applying of voltage to the electrostatic chuck, carrying the substrate to be processed into the processing container. Further, in the applying of voltage to the electrostatic chuck, the voltage is applied to the electrostatic chuck to reduce a potential difference between a focus ring and the substrate to be processed, the focus ring being provided to surround the electrostatic chuck. | 03-19-2015 |
20150072075 | FILM-FORMING APPARATUS AND FILM-FORMING METHOD - A film-forming apparatus includes an aerosol generation device which generates an aerosol including a solution of a film-forming material dispersed in a carrier gas, a chamber which vaporizes the aerosol such that fine particles of the film-forming material are generated from the aerosol that is generated by the aerosol generation device, a nozzle which discharges the fine particles generated by the chamber toward a substrate, and a moving mechanism which executes relative movement of the nozzle and the substrate along a surface of the substrate. The nozzle has a discharge port which discharges the fine particles to a slit-shaped region extending in a direction orthogonal to a moving direction of the relative movement between the nozzle and the substrate executed by the moving mechanism. | 03-12-2015 |
20150064924 | METHOD FOR ETCHING ORGANIC FILM AND PLASMA ETCHING DEVICE - In a method for etching an organic film according to an embodiment, a target object that has an organic film is set in a processing chamber. Then, a processing gas containing COS gas and O | 03-05-2015 |
20150064923 | PLASMA PROCESSING DEVICE AND PLASMA PROCESSING METHOD - A plasma processing device includes a processing chamber defining a plasma processing space and a stage for mounting thereon a target substrate in the processing chamber. The plasma processing device further includes a gas supply mechanism for introducing a processing gas into the plasma processing space, a plasma generation mechanism for supplying electromagnetic energy into the plasma processing space, and a control unit configured to, if a command to start a plasma process for the target substrate mounted on a substrate carry-in stage is issued, perform a warm-up process for supplying the processing gas into the plasma processing space by the gas supply mechanism and supplying the electromagnetic energy by the plasma generation mechanism in a state where no target substrate is mounted on the stage. | 03-05-2015 |
20150064922 | METHOD OF SELECTIVELY REMOVING A REGION FORMED OF SILICON OXIDE AND PLASMA PROCESSING APPARATUS - Provided is a method of selectively removing a first region from a workpiece which includes the first region formed of silicon oxide and a second region formed of silicon. The method performs a plurality of sequences. Each sequence includes: forming a denatured region by generating plasma of a processing gas that contains hydrogen, nitrogen, and fluorine within a processing container that accommodates the workpiece so as to denature a portion of the first region, and removing the denatured region within the processing container. In addition, a sequence subsequent to a predetermined number of sequences after a first sequence among the plurality of sequences further includes exposing the workpiece to plasma of a reducing gas which is generated within the processing container, prior to the forming of the denatured region. | 03-05-2015 |
20150064910 | SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING SYSTEM AND MEMORY MEDIUM - A substrate processing method includes supplying onto a substrate a processing liquid which contains a volatile component and forms a film, vaporizing the volatile component in the processing liquid such that the processing liquid solidifies or cures on the substrate and forms a film on the substrate, and supplying onto the film formed on the substrate a removing liquid which removes the processing liquid. The processing liquid is supplied onto the substrate after dry etching or ashing is applied to the substrate. | 03-05-2015 |
20150062545 | PATTERN FORMING METHOD, PATTERN FORMING APPARATUS, AND COMPUTER READABLE STORAGE MEDIUM - The present invention is a pattern forming method of forming a pattern on a substrate using a block copolymer, the pattern forming method including the steps of: forming a film of a block copolymer containing at least two kinds of polymers on the substrate; heating the film of the block copolymer; irradiating the heated film of the block copolymer with ultraviolet light in an atmosphere of an inert gas; and supplying an organic solvent to the film of the block copolymer irradiated with the ultraviolet light. | 03-05-2015 |
20150056808 | METHOD OF ETCHING SILICON OXIDE FILM - Provided is a method of etching a silicon oxide film. The method includes exposing a workpiece including the silicon oxide film and a mask formed on the silicon oxide film to plasma of a processing gas to etch the silicon oxide film. The mask includes a first film formed on the silicon oxide film and a second film formed on the first film, and the second film is constituted by a film having an etching rate lower than that of the first film with respect to active species in the plasma. | 02-26-2015 |
20150053346 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus includes a flow splitter for dividing a common gas into two common gas streams of common gas branch lines. A central introduction portion connected to one of the common gas branch lines supplies a common gas to a central portion of a substrate to be processed. A peripheral introducing portion connected to the other one of the common gas branch lines supplies the common gas to a peripheral portion of the substrate. The peripheral introducing portion has peripheral inlets arranged about a circumferential region above the substrate. An additive gas line is connected to an additive gas source to add an additive gas to at least one of the common gas branch lines. In addition, an electron temperature of a plasma in a region where the peripheral inlets are disposed is lower than that in a region where the introduction portion is disposed. | 02-26-2015 |
20150050750 | PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS - A plasma processing method of etching a multilayered material having a structure where a first magnetic layer | 02-19-2015 |
20150047974 | PLASMA PROCESSING APPARATUS AND HIGH FREQUENCY GENERATOR - A plasma processing apparatus ( | 02-19-2015 |
20150047567 | FILM-FORMING APPARATUS - A film-forming apparatus forms a film by sequentially supplying a plurality of kinds of reaction gases to a substrate placed between a placing unit and a ceiling plate in a processing chamber having vacuum atmosphere and supplying a replacement gas between supply of one reaction gas and supply of next reaction gas. A central gas ejecting unit is disposed above the central portion of the substrate, and includes gas ejecting ports formed therein to spread the gases toward the outer side in the horizontal direction. A peripheral gas supply unit is disposed to surround the central gas ejecting unit. The peripheral gas supply unit includes a plurality of gas ejecting ports, which is formed in the circumferential direction such that the gases are spread in the horizontal direction toward the outer circumferential side and the central side of the substrate in a plan view. | 02-19-2015 |
20150047565 | Trap Mechanism, Exhaust System, and Film Formation Device - A trap mechanism is provided in the middle of an exhaust passage through which an exhaust gas, which is exhausted from a film formation device body that forms a thin film on the surface of a workpiece (W), flows, and recovers a gas to be collected that is contained in the exhaust gas by cooling and liquefying the gas to be collected. The trap mechanism includes: a housing having a gas inlet and a gas outlet; a partitioning member that partitions the inside of the housing into retention spaces; communication paths that communicate the retention spaces with one another; and cooling jackets that cool the communication paths to cool the exhaust gas. With this structure, the exhaust gas is adiabatically expanded while being cooled, and the gas to be collected is efficiently cooled and liquefied. | 02-19-2015 |
20150041983 | SEMICONDUCTOR-DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE - Provided are a semiconductor device and semiconductor-device manufacturing method that make it possible to improve the contact between an insulating film and a wiring member and the reliability thereof. This method for manufacturing a semiconductor device ( | 02-12-2015 |
20150040950 | PURGING APPARATUS AND PURGING METHOD FOR SUBSTRATE STORAGE CONTAINER - Provided is a purging apparatus including an upper nozzle provided above an opening of the substrate storage container and configured to supply a dry gas obliquely downwardly to a side opposite to the substrate storage container and over the entire surface of the width of the opening; and a plurality of side nozzles provided at both sides of the opening of the substrate, respectively, and each configured to supply a dry gas towards the inside of the substrate storage container from an outside of the opening. The side nozzles are each longer than a height of the opening and formed with a plurality of supply holes supplying the dry gas at predetermined intervals in a vertical direction. The respective supply hole formed on one side nozzle and the respective supply holes formed on the other side nozzle are disposed alternately so as not to be located at the same height. | 02-12-2015 |
20150037982 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - In a semiconductor device manufacturing method, a target object including a multilayer film and a mask formed on the multilayer film is prepared in a processing chamber of a plasma processing apparatus. The multilayer film is formed by alternately stacking a silicon oxide film and a silicon nitride film. The multilayer film is etched by supplying a processing gas containing hydrogen gas, hydrogen bromide gas, nitrogen trifluoride gas and at least one of hydrocarbon gas, fluorohydrocarbon gas and fluorocarbon gas into the processing chamber of the plasma processing apparatus and generating a plasma of the processing gas in the processing chamber. | 02-05-2015 |
20150032246 | ENERGY-CONSUMPTION MONITORING SYSTEM FOR SUBSTRATE PROCESSING APPARATUS AND ENERGY-CONSUMPTION MONITORING METHOD FOR SUBSTRATE PROCESSING APPARATUS - An energy-consumption monitoring system for a substrate processing apparatus includes a data collection device which collects process implementation data of a process to be executed according to each recipe in a substrate processing apparatus, a memory device which stores energy consumption data that indicate relationship between an individual energy-consuming event in the process and an amount of energy consumed per unit time by the individual energy-consuming event, and a computation device which detects an occurrence of the individual energy-consuming event and virtually calculate a cumulative energy consumption based on a duration of the individual energy-consuming event and the energy consumption data of the individual energy-consuming event stored in the memory device. | 01-29-2015 |
20150031218 | FILM FORMING PROCESS AND FILM FORMING APPARATUS - In a film forming apparatus ( | 01-29-2015 |
20150030774 | PLATING METHOD, PLATING SYSTEM AND STORAGE MEDIUM - A plating method can improve adhesivity with an underlying layer. The plating method of performing a plating process on a substrate includes forming a first plating layer | 01-29-2015 |
20150028962 | RADIO FREQUENCY SIGNAL SPLITTER AND MATCHER - This application relates to systems and methods for splitting a current signal into at least two signals that are out of phase with each other. The power splitter may include a conductive element that may generate standing magnetic field that alternates at specified frequency. An inductor placed near or in the magnetic field may induce an alternating current at the specified frequency. Each end of the inductor may be coupled to a connector that may be coupled to an antenna that may be incorporated into a plasma processing chamber. | 01-29-2015 |
20150027637 | PLASMA PROCESSING APPARATUS - Provided is a plasma processing apparatus in which a variable inductor is installed in series with a variable condenser in a second power feeding unit that distributes and supplies high-frequency power to an inner upper electrode | 01-29-2015 |
20150027635 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus of exciting a processing gas into plasma by applying a high frequency power between an upper electrode and a lower electrode provided within a processing chamber and performing a plasma process on a target object to be processed with the plasma includes a DC power supply configured to apply a DC voltage to the upper electrode; a ground electrode connected to the DC power supply; and an annular shield member provided outside the ground electrode. A groove is formed into a downward recess at an outer peripheral portion of the ground electrode, and an upper end of the shield member is positioned above an upper end of the peripheral portion of the ground electrode. A protruding portion, which is protruded toward a center of the ground electrode, is formed at a portion of the shield member positioned above the ground electrode. | 01-29-2015 |
20150024603 | PLASMA ETCHING METHOD AND PLASMA ETCHING APPARATUS - In a plasma etching method for etching a metal layer of a substrate to be processed through a hard mask by using a plasma etching apparatus, a first step in which a first etching gas comprising a mixed gas of O | 01-22-2015 |
20150022086 | PLASMA PROCESSING APPARATUS, ABNORMAL OSCILLATION DETERMINATION METHOD AND HIGH-FREQUENCY GENERATOR - Disclosed is a plasma processing apparatus including: a processing container; a plasma generating mechanism including a high-frequency oscillator, and configured to generate plasma within the processing container by using a high frequency wave oscillated by the high-frequency oscillator; an impedance regulator configured to adjust impedance to be applied to the high-frequency oscillator; and a determining unit configured to change the impedance to be adjusted by the impedance regulator and to determine an abnormal oscillation of the high-frequency oscillator based on a component of a center frequency of a fundamental wave that is the high frequency wave oscillated by the high-frequency oscillator, and a component of a peripheral frequency present at both ends of a predetermined frequency band centered around the center frequency of the fundamental wave in a state where the impedance is changed. | 01-22-2015 |
20150016936 | SUBSTRATE TRANSFER METHOD AND DEVICE - A substrate transfer method includes: a step of placing a first and a second substrate on a first and a second alignment part which are arranged to be vertically spaced from each other by using a first and a second pick. The method further includes a first positioning step of positioning the first pick at a first reception position determined based on an alignment position for the first substrate; a first receiving step of receiving the first substrate from the first alignment part by moving the first pick. The method further includes a second positioning step of positioning the second pick at a second reception position determined based on an alignment position for the second substrate; and a second receiving step of receiving the second substrate from the second alignment part by moving the second pick. | 01-15-2015 |
20150015139 | MICROWAVE PLASMA PROCESSING APPARATUS AND MICROWAVE SUPPLYING METHOD - A microwave plasma processing apparatus includes a processing space; a microwave generator which generates microwaves for generating a plasma; a distributor which distributes the microwaves to a plurality of waveguides; an antenna installed in a processing container to seal the processing space and to radiate microwaves distributed by the distributor, to the processing space; and a monitor unit configured to monitor a voltage of each of the plurality of waveguides. A control unit acquires a control value of a distribution ratio of the distributor, which corresponds to a difference between a voltage monitor value of the monitor unit and a predetermined voltage reference value, from a storage unit that stores the difference and the control value corresponding to each other. The control unit is also configured to control the distribution ratio of the distributor, based on the acquired control value. | 01-15-2015 |
20150013913 | MICROWAVE PLASMA PROCESSING APPARATUS - A microwave plasma processing apparatus including a processing space; a dielectric window having a facing surface facing the processing space; and an antenna plate installed on a surface of the dielectric window opposite to the facing surface, and formed with a plurality of slots configured to radiate microwaves for plasma excitation to the processing space through the dielectric window. The plurality of slots includes a first slot group configured to transmit microwaves guided to a center side of the dielectric window, and a second slot group configured to transmit microwaves guided to a peripheral edge side of the dielectric window. The dielectric window includes a first concave portion in a region corresponding to the first slot group of the antenna plate on the facing surface, and a second concave portion in a region corresponding to the second slot group of the antenna plate on the facing surface. | 01-15-2015 |
20150013912 | MICROWAVE PLASMA PROCESSING APPARATUS, SLOT ANTENNA, AND SEMICONDUCTOR DEVICE - A microwave plasma processing apparatus includes an inner slow-wave plate installed above a first slot in an inner waveguide which transmits microwaves to the first slot by transmitting the microwaves in a center side space, which is positioned closer to the center than the convex portion in the space between the slot plate and the intermediate metal body, through the space between the inner conductor and the intermediate conductor. An outer slow-wave plate is installed above a second slot in an outer waveguide which transmits microwaves to the second slot by transmitting the microwaves in an outer periphery side space, which is positioned closer to an outer periphery than the convex portion in the space between the slot antenna plate and the intermediate metal body, sequentially through the space between the intermediate conductor and the outer conductor, and the space between the intermediate metal body and cooling plate. | 01-15-2015 |
20150013911 | MICROWAVE PLASMA PROCESSING APPARATUS, SLOT ANTENNA, AND SEMICONDUCTOR DEVICE - Disclosed is a microwave plasma processing apparatus. The microwave plasma processing apparatus includes a coaxial waveguide installed in a through hole which is formed in the center side portion in the intermediate metal body to extend continuously through the cooling plate and the intermediate metal plate. The coaxial waveguide includes an inner conductor, an intermediate conductor and an outer conductor. Each of a space between the inner conductor installed in a hollow portion of the intermediate conductor and the intermediate conductor and a space between the intermediate conductor installed in a hollow portion of the outer conductor and the outer conductor transmits microwaves. A difference between an inner diameter of the outer conductor and an outer diameter of the intermediate conductor is larger than a difference between an outer diameter of the inner conductor and an inner diameter of the intermediate conductor. | 01-15-2015 |
20150013907 | MICROWAVE PLASMA PROCESSING APPARATUS, SLOT ANTENNA, AND SEMICONDUCTOR DEVICE - Disclosed is a microwave plasma processing apparatus. The microwave plasma processing apparatus includes a cooling plate. In addition, the microwave plasma processing apparatus includes an intermediate metal body installed on a processing container side of the cooling plate to be spaced apart from the cooling plate so that a spacing between the intermediate metal body and the cooling plate forms a waveguide of microwaves. The intermediate metal body is in contact with the cooling plate at one or plural convex portions arranged to block a portion of the waveguide. Further, the microwave plasma processing apparatus includes a coaxial waveguide configured to supply microwaves to the waveguide, a slot antenna plate configured to radiate microwaves via the waveguide, a dielectric window installed on the processing container side of the slot antenna plate, and a processing container installed to be sealed by the dielectric window. | 01-15-2015 |
20150007940 | PLASMA PROCESSING DEVICE AND HIGH-FREQUENCY GENERATOR - Provided is a plasma processing device which processes an object to be processed using plasma. The plasma processing device includes: a processing container configured to perform a processing by the plasma therein; and a plasma generation mechanism including a high-frequency generator disposed outside the processing container to generate high-frequency waves. The plasma generation mechanism is configured to generate the plasma in the processing container using the high-frequency waves generated by the high-frequency generator. The high-frequency generator includes a high-frequency oscillator configured to oscillate the high-frequency waves and an injection unit configured to inject a signal into the high-frequency oscillator. The signal has a frequency which is the same as a fundamental frequency oscillated by the high-frequency oscillator and has reduced different frequency components. | 01-08-2015 |
20150007774 | FILM FORMATION DEVICE - A processing chamber accommodating a mounting table includes a first region and a second region. As the mounting table rotates, a substrate mounting region of the mounting table moves in a circumferential direction around the axis to pass through the first region and the second region. A first gas supply unit supplies a precursor gas to the first region from an injection unit disposed to face the mounting table. An exhaust outlet exhausts an exhaust port formed to extend along a closed path surrounding the exhaust outlet. A second gas supply unit supplies purge gas from an injection port formed to extend along a closed path surrounding the exhaust port. A plasma generation unit generates plasma from a reaction gas in the second region. An angular range of the second region is larger than an angular range of the first region. | 01-08-2015 |
20140377960 | PLASMA ETCHING METHOD - In a plasma etching method of performing a plasma etching on an amorphous carbon layer of a substrate to be processed by using an inorganic film as a mask, the substrate being mounted in a processing chamber, the plasma etching on the amorphous carbon layer is performed by using O | 12-25-2014 |