THE JAPAN SCIENCE AND TECHNOLOGY AGENCY
Kawaguchi City, JP
THE JAPAN SCIENCE AND TECHNOLOGY AGENCY Patent applications | ||
Patent application number | Title | Published |
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20090146162 | FABRICATION OF NONPOLAR INDIUM GALLIUM NITRIDE THIN FILMS, HETEROSTRUCTURES AND DEVICES BY METALORGANIC CHEMICAL VAPOR DEPOSITION - A method for the fabrication of nonpolar indium gallium nitride (InGaN) films as well as nonpolar InGaN-containing device structures using metalorganic chemical vapor deposition (MOVCD). The method is used to fabricate nonpolar InGaN/GaN violet and near-ultraviolet light emitting diodes and laser diodes. | 06-11-2009 |