TESSERA, INC. Patent applications |
Patent application number | Title | Published |
20160035692 | STACKED PACKAGING IMPROVEMENTS - A plurality of microelectronic assemblies are made by severing an in-process unit including an upper substrate and lower substrate with microelectronic elements disposed between the substrates. In a further embodiment, a lead frame is joined to a substrate so that the leads project from this substrate. Lead frame is joined to a further substrate with one or more microelectronic elements disposed between the substrates. | 02-04-2016 |
20150325498 | LOW-STRESS VIAS - A component can include a substrate having a front surface and a rear surface remote therefrom, an opening extending from the rear surface towards the front surface, and a conductive via extending within the opening. The substrate can have a CTE less than 10 ppm/° C. The opening can define an inner surface between the front and rear surfaces. The conductive via can include a first metal layer overlying the inner surface and a second metal region overlying the first metal layer and electrically coupled to the first metal layer. The second metal region can have a CTE greater than a CTE of the first metal layer. The conductive via can have an effective CTE across a diameter of the conductive via that is less than 80% of the CTE of the second metal region. | 11-12-2015 |
20150145117 | ENHANCED STACKED MICROELECTRONIC ASSEMBLIES WITH CENTRAL CONTACTS AND IMPROVED THERMAL CHARACTERISTICS - A microelectronic assembly includes a dielectric element having oppositely-facing first and second surfaces and one or more apertures extending between the surfaces, the dielectric element further having conductive elements thereon; a first microelectronic element having a rear surface and a front surface facing the first surface of the dielectric element, the first microelectronic element having a first edge and a plurality of contacts exposed at the front surface thereof; a second microelectronic element including having a rear surface and a front surface facing the rear surface of the first microelectronic element, a projecting portion of the front surface of the second microelectronic element extending beyond the first edge of the first microelectronic element, the projecting portion being spaced from the first surface of the dielectric element, the second microelectronic element having a plurality of contacts exposed at the projecting portion of the front surface; leads extending from contacts of the microelectronic elements through the at least one aperture to at least some of the conductive elements; and a heat spreader thermally coupled to at least one of the first microelectronic element or the second microelectronic element. | 05-28-2015 |
20150091118 | PACKAGE-ON-PACKAGE ASSEMBLY WITH WIRE BONDS TO ENCAPSULATION SURFACE - A method of making a microelectronic package includes forming a dielectric encapsulation layer on an in-process unit having a substrate having a first surface and a second surface remote therefrom. A microelectronic element is mounted to the first surface of the substrate, and a plurality of conductive elements exposed at the first surface, at least some of which are electrically connected to the microelectronic element. Wire bonds have bases joined to the conductive elements and end surfaces remote from the bases and define an edge surface extending away between the base and the end surface. The encapsulation layer is formed to at least partially cover the first surface and portions of the wire bonds with unencapsulated portions of the wire bonds being defined by at least one of the end surface or a portion of the edge surface that is uncovered thereby. | 04-02-2015 |
20140342503 | COMPLIANT INTERCONNECTS IN WAFERS - A microelectronic assembly includes a substrate and an electrically conductive element. The substrate can have a CTE less than 10 ppm/° C., a major surface having a recess not extending through the substrate, and a material having a modulus of elasticity less than 10 GPa disposed within the recess. The electrically conductive element can include a joining portion overlying the recess and extending from an anchor portion supported by the substrate. The joining portion can be at least partially exposed at the major surface for connection to a component external to the microelectronic unit. | 11-20-2014 |
20140333371 | POWER BOOSTING CIRCUIT FOR SEMICONDUCTOR PACKAGING - A microelectronic package includes a microelectronic element operable to output a discrete-value logic signal indicating an imminent increase in demand for current by at least some portion of the microelectronic element. An active power delivery element within the package is operable by the logic signal to increase current delivery to the microelectronic element. | 11-13-2014 |
20140332982 | Stacked Packages and Microelectronic Assemblies Incorporating the Same - A microelectronic assembly includes units superposed on one another to form at least one stack having a vertical direction. Each unit includes one or more microelectronic devices and has top and bottom surfaces. Top unit terminals are exposed at the top surfaces and bottom unit terminals are exposed at the bottom surfaces. The top and bottom unit terminals are provided at a set of ordered column positions. Each top unit terminal of the set, except the top unit terminals at the highest ordered column position, is connected to a respective bottom unit terminal of the same unit at a next higher ordered column position. Each bottom unit terminal of the set, except the bottom unit terminals of the lowest unit in the stack, is connected to a respective upper unit terminal of the next lower unit in the stack at the same column position. | 11-13-2014 |
20140308987 | WEARABLE ULTRA-THIN MINIATURIZED MOBILE COMMUNICATIONS - A device is provided with a housing adapted to engage a portion of a head of a user, such as the ear of the user. The device includes a camera component adapted to face in the same direction as the user when engaged with the portion of the head of the user. The device may be adapted to be controlled using voice commands from the user | 10-16-2014 |
20140273393 | HIGH DENSITY THREE-DIMENSIONAL INTEGRATED CAPACITORS - A capacitor can include a substrate having a first surface, a second surface remote from the first surface, and a through opening extending between the first and second surfaces, first and second metal elements, and a capacitor dielectric layer separating and insulating the first and second metal elements from one another at least within the through opening. The first metal element can be exposed at the first surface and can extend into the through opening. The second metal element can be exposed at the second surface and can extend into the through opening. The first and second metal elements can be electrically connectable to first and second electric potentials. The capacitor dielectric layer can have an undulating shape. | 09-18-2014 |
20140262460 | Connection Component with Posts and Pads - A packaged microelectronic element includes connection component incorporating a dielectric layer ( | 09-18-2014 |
20140253145 | SYSTEM AND METHOD FOR TESTING FUSE BLOW RELIABILITY FOR INTEGRATED CIRCUITS - System and method for testing the reliability of a fuse blow condition. The fuse blow detection circuit includes a fuse circuit comprising a fuse having a first end coupled to ground. A common node is coupled to the second end of the fuse. A pre-charge circuit is coupled to the common node for pre-charging the common node to a pre-charged HIGH level. An inverter includes an inverter output and an inverter input, wherein the inverter input is coupled to the common node. A feedback latch is coupled between a voltage source and ground, and includes a latch input that is coupled to the inverter output and a latch output coupled to the common node. A test circuit is included that is coupled to the common node, wherein in a normal mode the test circuit adds strength to the feedback latch for purposes of maintaining the common node at the pre-charged HIGH level, such that in a test mode the feedback latch is weaker than in the normal mode for purposes of maintaining the common node at the pre-charged HIGH level. | 09-11-2014 |
20140239513 | ENHANCED STACKED MICROELECTRONIC ASSEMBLIES WITH CENTRAL CONTACTS - A microelectronic assembly includes a dielectric element having first and second surfaces, first and second apertures extending between the first and second surfaces and defining a central region of the first surface between the first and second apertures, first and second microelectronic elements, and leads extending from contacts exposed at respective front surfaces of the first and second microelectronic elements to central terminals exposed at the central region. The front surface of the first microelectronic element can face the second surface of the dielectric element. The front surface of the second microelectronic element can face a rear surface of the first microelectronic element. The contacts of the second microelectronic element can project beyond an edge of the first microelectronic element. At least first and second ones of the leads can electrically interconnect a first central terminal of the central terminals with each of the first and second microelectronic elements. | 08-28-2014 |
20140217584 | FLOW UNDERFILL FOR MICROELECTRONIC PACKAGES - A microelectronic assembly includes a first component with first conductive elements; a second component with second conductive elements; a bond metal; and an underfill layer. The posts have a height above the respective surface from which the posts project. A bond metal can be disposed between respective pairs of conductive elements, each pair including at least one of the posts and at least one of the first or second conductive elements confronting the at least one post. The bond metal can contact edges of the posts along at least one half the height of the posts. An underfill layer contacts and bonds the first and second surfaces of the first and second components. A residue of the underfill layer may be present at at least one interfacial surfaces between at least some of the posts and the bond metal or may be present within the bond metal. | 08-07-2014 |
20140213021 | MICROELECTRONIC PACKAGES AND METHODS THEREFOR - A method of making a microelectronic assembly can include molding a dielectric material around at least two conductive elements which project above a height of a substrate having a microelectronic element mounted thereon, so that remote surfaces of the conductive elements remain accessible and exposed within openings extending from an exterior surface of the molded dielectric material. The remote surfaces can be disposed at heights from said surface of said substrate which are lower or higher than a height of the exterior surface of the molded dielectric material from the substrate surface. The conductive elements can be arranged to simultaneously carry first and second different electric potentials: e.g., power, ground or signal potentials. | 07-31-2014 |
20140210104 | NON-LITHOGRAPHIC FORMATION OF THREE-DIMENSIONAL CONDUCTIVE ELEMENTS - A method of forming a conductive element on a substrate and the resulting assembly are provided. The method includes forming a groove in a sacrificial layer overlying a dielectric region disposed on a substrate. The groove preferably extends along a sloped surface of the substrate. The sacrificial layer is preferably removed by a non-photolithographic method, such as ablating with a laser, mechanical milling, or sandblasting. A conductive element is formed in the groove. The grooves may be formed. The grooves and conductive elements may be formed along any surface of the substrate, including within trenches and vias formed therein, and may connect to conductive pads on the front and/or rear surface of the substrate. The conductive elements are preferably formed by plating and may or may not conform to the surface of the substrate. | 07-31-2014 |
20140210102 | SYSTEMS AND METHODS FOR PRODUCING FLAT SURFACES IN INTERCONNECT STRUCTURES - Methods and apparatus for forming a semiconductor device are provided which may include any number of features. One feature is a method of forming an interconnect structure that results in the interconnect structure having a co-planar or flat top surface. Another feature is a method of forming an interconnect structure that results in the interconnect structure having a surface that is angled upwards greater than zero with respect to a top surface of the substrate. The interconnect structure can comprise a damascene structure, such as a single or dual damascene structure, or alternatively, can comprise a silicon-through via (TSV) structure. | 07-31-2014 |
20140206184 | INTERPOSER HAVING MOLDED LOW CTE DIELECTRIC - A method for making an interconnection component is disclosed, including forming a plurality of metal posts extending away from a reference surface. Each post is formed having a pair of opposed end surface and an edge surface extending therebetween. A dielectric layer is formed contacting the edge surfaces and filling spaces between adjacent ones of the posts. The dielectric layer has first and second opposed surfaces adjacent the first and second end surfaces. The dielectric layer has a coefficient of thermal expansion of less than 8 ppm/° C. The interconnection component is completed such that it has no interconnects between the first and second end surfaces of the posts that extend in a lateral direction. First and second pluralities of wettable contacts are adjacent the first and second opposed surfaces. The wettable contacts are usable to bond the interconnection component to a microelectronic element or a circuit panel. | 07-24-2014 |
20140206147 | STACKED MICROELECTRONIC ASSEMBLY WITH TSVS FORMED IN STAGES AND CARRIER ABOVE CHIP - A microelectronic assembly is provided which includes a first element consisting essentially of at least one of semiconductor or inorganic dielectric material having a surface facing and attached to a major surface of a microelectronic element at which a plurality of conductive pads are exposed, the microelectronic element having active semiconductor devices therein. A first opening extends from an exposed surface of the first element towards the surface attached to the microelectronic element, and a second opening extends from the first opening to a first one of the conductive pads, wherein where the first and second openings meet, interior surfaces of the first and second openings extend at different angles relative to the major surface of the microelectronic element. A conductive element extends within the first and second openings and contacts the at least one conductive pad. | 07-24-2014 |
20140203452 | ACTIVE CHIP ON CARRIER OR LAMINATED CHIP HAVING MICROELECTRONIC ELEMENT EMBEDDED THEREIN - A structure including a first semiconductor chip with front and rear surfaces and a cavity in the rear surface. A second semiconductor chip is mounted within the cavity. The first chip may have vias extending from the cavity to the front surface and via conductors within these vias serving to connect the additional microelectronic element to the active elements of the first chip. The structure may have a volume comparable to that of the first chip alone and yet provide the functionality of a multi-chip assembly. A composite chip incorporating a body and a layer of semiconductor material mounted on a front surface of the body similarly may have a cavity extending into the body from the rear surface and may have an additional microelectronic element mounted in such cavity. | 07-24-2014 |
20140201994 | LOW-STRESS TSV DESIGN USING CONDUCTIVE PARTICLES - A component can include a substrate having a first surface and a second surface remote therefrom, an opening extending in a direction between the first and second surfaces, and a conductive via extending within the opening. The substrate can have a CTE less than 10 ppm/° C. The conductive via can include a plurality of base particles each including a first region of a first metal substantially covered by a layer of a second metal different from the first metal. The base particles can be metallurgically joined together and the second metal layers of the particles can be at least partially diffused into the first regions. The conductive via can include voids interspersed between the joined base particles. The voids can occupy 10% or more of a volume of the conductive via. | 07-24-2014 |
20140185402 | DRAM SECURITY ERASE - A memory includes a DRAM array having memory cells, wordlines and bitlines coupled to the memory cells, and sense amplifiers. The memory can be configured to perform a method in which a wordline of the DRAM array is set to an active state. While the wordline is active, signals develop on the respective bitlines according to the flows of charge between the memory cells coupled to the wordline and the respective bitlines. The sense amplifiers connected to the respective bitlines can remain inactive such that the sense amplifiers do not amplify the signals to storable signal levels. Then, when the wordline is set again to the inactive state, insufficient charge remains in the memory cells coupled to the wordline such that the data stored in memory cells coupled to the wordline are erased. These steps can be repeated using each of a remaining number of wordlines of all or a selected range of the DRAM array so as to erase the data stored in all of the DRAM array or a selected range. | 07-03-2014 |
20140175647 | PACKAGED MICROELECTRONIC ELEMENTS HAVING BLIND VIAS FOR HEAT DISSIPATION - System and method for thermal management in a multi-chip packaged device. A microelectronic unit is disclosed, and includes a semiconductor element having atop surface and a bottom surface remote from the top surface. A semiconductor device including active elements is located adjacent to the top surface. Operation of the semiconductor device generates heat. Additionally, one or more first blind vias extend from the bottom surface and partially into a thickness of the semiconductor element. In that manner, the blind via does not contact or extend to the semiconductor device (defined as active regions of the semiconductor element, and moreover, is electrically isolated from the semiconductor device. A thermally conductive material fills the one or more first blind vias for heat dissipation. Specifically, heat generated by the semiconductor device thermally conducts from the semiconductor element, and is further distributed, transferred and/or dissipated through the one or more first blind vias to other connecting components. | 06-26-2014 |
20140167287 | MICROELECTRONIC PACKAGE WITH TERMINALS ON DIELECTRIC MASS - A package for a microelectronic element, such as a semiconductor chip, has a dielectric mass overlying the package substrate and microelectronic element and has top terminals exposed at the top surface of the dielectric mass. Traces extending along edge surfaces of the dielectric mass desirably connect the top terminals to bottom terminals on the package substrate. The dielectric mass can be formed, for example, by molding or by application of a conformal layer. | 06-19-2014 |
20140157592 | RELIABLE WIRE STRUCTURE AND METHOD - A wire structure, which may be configured for a semiconductor device, is disclosed. The wire may include an elongate flexible core formed of a conductor material and a cladding layer covering an outer surface of the core. The cladding layer may be a conductor. In various aspects the cladding layer and core have a different grain sizes. An average grain size of the core material may several orders of magnitude greater than an average grain size of the cladding layer material. The cladding layer may be an alloy having a varying concentration of a minor component across its thickness. Methods of forming a wire structure are also disclosed. | 06-12-2014 |
20140151881 | PACKAGED SEMICONDUCTOR CHIPS WITH ARRAY - A chip-sized, wafer level packaged device including a portion of a semiconductor wafer including a device, at least one packaging layer containing silicon and formed over the device, a first ball grid array formed over a surface of the at least one packaging layer and being electrically connected to the device and a second ball grid array formed over a surface of the portion of the semiconductor wafer and being electrically connected to the device. | 06-05-2014 |
20140145329 | FINE PITCH MICROCONTACTS AND METHOD FOR FORMING THEREOF - A method includes applying a final etch-resistant material to an in-process substrate so that the final etch-resistant material at least partially covers first microcontact portions integral with the substrate and projecting upwardly from a surface of the substrate, and etching the surface of the substrate so as to leave second microcontact portions below the first microcontact portions and integral therewith, the final etch-resistant material at least partially protecting the first microcontact portions from etching during the further etching step. A microelectronic unit includes a substrate, and a plurality of microcontacts projecting in a vertical direction from the substrate, each microcontact including a base region adjacent the substrate and a tip region remote from the substrate, each microcontact having a horizontal dimension which is a first function of vertical location in the base region and which is a second function of vertical location in the tip region. | 05-29-2014 |
20140131892 | CHIP ASSEMBLY HAVING VIA INTERCONNECTS JOINED BY PLATING - An assembly and method of making same are provided. The assembly can be formed by juxtaposing a first electrically conductive element overlying a major surface of a first semiconductor element with an electrically conductive pad exposed at a front surface of a second semiconductor element. An opening can be formed extending through the conductive pad of the second semiconductor element and exposing a surface of the first conductive element. The opening may alternatively be formed extending through the first conductive element. A second electrically conductive element can be formed extending at least within the opening and electrically contacting the conductive pad and the first conductive element. A third semiconductor element can be positioned in a similar manner with respect to the second semiconductor element. | 05-15-2014 |
20140131849 | STACKED CHIP-ON-BOARD MODULE WITH EDGE CONNECTOR - A module can include a module card and first and second microelectronic elements having front surfaces facing a first surface of the module card. The module card can also have a second surface and a plurality of parallel exposed edge contacts adjacent an edge of at least one of the first and second surfaces for mating with corresponding contacts of a socket when the module is inserted in the socket. Each microelectronic element can be electrically connected to the module card. The front surface of the second microelectronic element can partially overlie a rear surface of the first microelectronic element and can be attached thereto. | 05-15-2014 |
20140124565 | MICROELECTRONIC ASSEMBLY WITH JOINED BOND ELEMENTS HAVING LOWERED INDUCTANCE - First and second bond elements, e.g., wire bonds, electrically connect a chip contact with one or more substrate contacts of a substrate, and can be arranged so that the second bond element is joined to the first bond element at each end and so that the second bond element does not touch the chip contact or one or more substrate contacts. A third bond element can be joined to ends of the first and second bond elements. In one embodiment, a bond element can have a looped connection, having first and second ends joined at a first contact and a middle portion joined to a second contact. | 05-08-2014 |
20140117567 | MICROELECTRONIC ASSEMBLY WITH IMPEDANCE CONTROLLED WIREBOND AND REFERENCE WIREBOND - A microelectronic assembly can include a microelectronic device, e.g., semiconductor chip, connected together with an interconnection element, e.g., substrate, the latter having signal contacts and reference contacts. The reference contacts can be connectable to a source of reference potential such as ground or a voltage source other than ground such as a voltage source used for power. Signal conductors, e.g., signal wirebonds can be connected to device contacts exposed at a surface of the microelectronic device. Reference conductors, e.g., reference wirebonds can be provided, at least one of which can be connected with two reference contacts of the interconnection element. The reference wirebond can have a run which extends at an at least substantially uniform spacing from a signal conductor, e.g., signal wirebond that is connected to the microelectronic device over at least a substantial portion of the length of the signal conductor. In such manner a desired impedance may be achieved for the signal conductor. | 05-01-2014 |
20140117516 | MULTIPLE DIE IN A FACE DOWN PACKAGE - A microelectronic package includes a subassembly including a first substrate and first and second microelectronic elements having contact-bearing faces facing towards oppositely-facing first and second surfaces of the first substrate and each having contacts electrically connected with the first substrate. The contact-bearing faces of the first and second microelectronic elements at least partially overlie one another. Leads electrically connect the subassembly with a second substrate, at least portions of the leads being aligned with an aperture in the second substrate. The leads can include wire bonds extending through an aperture in the first substrate and joined to contacts of the first microelectronic element aligned with the first substrate aperture. In one example, the subassembly can be electrically connected with the second substrate using electrically conductive spacer elements. | 05-01-2014 |
20140103500 | MICROELECTRONIC ASSEMBLY WITH IMPEDANCE CONTROLLED WIREBOND AND CONDUCTIVE REFERENCE ELEMENT - A microelectronic assembly can include a microelectronic device having device contacts exposed at a surface thereof and an interconnection element having element contacts and having a face adjacent to the microelectronic device. Conductive elements, e.g., wirebonds connect the device contacts with the element contacts and have portions extending in runs above the surface of the microelectronic device. A conductive layer has a conductive surface disposed at at least a substantially uniform distance above or below the plurality of the runs of the conductive elements. In some cases, the conductive material can have first and second dimensions in first and second horizontal directions which are smaller than first and second corresponding dimensions of the microelectronic device. The conductive material is connectable to a source of reference potential so as to achieve a desired impedance for the conductive elements. | 04-17-2014 |
20140099754 | COMPLIANT INTERCONNECTS IN WAFERS - A microelectronic assembly includes a substrate and an electrically conductive element. The substrate can have a CTE less than 10 ppm/° C., a major surface having a recess not extending through the substrate, and a material having a modulus of elasticity less than 10 GPa disposed within the recess. The electrically conductive element can include a joining portion overlying the recess and extending from an anchor portion supported by the substrate. The joining portion can be at least partially exposed at the major surface for connection to a component external to the microelectronic unit. | 04-10-2014 |
20140097722 | ELECTROHYDRODYNAMIC (EHD) FLUID MOVER WITH COLLECTOR ELECTRODE LEADING SURFACE SHAPING FOR SPATIALLY SELECTIVE FIELD REDUCTION - In various electrohydrodynamic (EHD) fluid mover designs disclosed herein, electric field strength may be locally reduced in peripheral regions of an emitter-to-collector electrode gap. As a result, detrimental accumulations of silica, dust and other airborne contaminants can be reduced on surfaces in such peripheral regions, which may otherwise be susceptible to accumulations and/or difficult to clean or condition. In some cases, localized reduction in electric field near sidewall surfaces can provide desirable localized reductions in susceptibility to contaminant related spark or shunting current paths. In some cases, such as when a field blunting structure is employed and (as a result) a generally more uniform electric field pattern is provided locally, an engineered or purposeful local reduction both electric field strength and ion generation in peripheral regions of an emitter-to-collector electrode gap may be quite desirable. | 04-10-2014 |
20140097546 | MULTI-FUNCTION AND SHIELDED 3D INTERCONNECTS - A microelectronic unit includes a semiconductor element consisting essentially of semiconductor material and having a front surface, a rear surface, a plurality of active semiconductor devices adjacent the front surface, a plurality of conductive pads exposed at the front surface, and an opening extending through the semiconductor element. At least one of the conductive pads can at least partially overlie the opening and can be electrically connected with at least one of the active semiconductor devices. The microelectronic unit can also include a first conductive element exposed at the rear surface for connection with an external component, the first conductive element extending through the opening and electrically connected with the at least one conductive pad, and a second conductive element extending through the opening and insulated from the first conductive element. The at least one conductive pad can overlie a peripheral edge of the second conductive element. | 04-10-2014 |
20140084485 | RELIABLE PACKAGING AND INTERCONNECT STRUCTURES - Methods and apparatus for forming a semiconductor device are provided which may include any number of features. One feature is a method of forming an interconnect structure that results in the interconnect structure having a top surface and portions of the side walls of the interconnect structure covered in a dissimilar material. In some embodiments, the dissimilar material can be a conductive material or a nano-alloy. The interconnect structure can be formed by removing a portion of the interconnect structure, and covering the interconnect structure with the dissimilar material. The interconnect structure can comprise a damascene structure, such as a single or dual damascene structure, or alternatively, can comprise a silicon-through via (TSV) structure. | 03-27-2014 |
20140077351 | MICROELECTRONIC PACKAGES WITH NANOPARTICLE JOINING - A method of making an assembly includes the steps of applying metallic nanoparticles to exposed surfaces of conductive elements of either of or both of a first component and a second component, juxtaposing the conductive elements of the first component with the conductive elements of the second component with the metallic nanoparticles disposed therebetween, and elevating a temperature at least at interfaces of the juxtaposed conductive elements to a joining temperature at which the metallic nanoparticles cause metallurgical joints to form between the juxtaposed conductive elements. The conductive elements of either of or both of the first component and the second component can include substantially rigid posts having top surfaces projecting a height above the surface of the respective component and edge surfaces extending at substantial angles away from the top surfaces thereof. | 03-20-2014 |
20140057370 | DUAL WAFER SPIN COATING - A method of bonding a first substrate and a second substrate includes the steps of rotating first substrate with an adhesive mass thereon, and second substrate contacting the mass and overlying the first substrate, controlling a vertical height of a heated control platen spaced apart from and not contacting the second substrate so as to control a temperature of the adhesive mass, so as to at least one of bond the first and second substrates in alignment with one another, or achieve a sufficiently planar adhesive interface between the first and second substrates. | 02-27-2014 |
20140048954 | STACKED MICROELECTRONIC ASSEMBLY WITH TSVS FORMED IN STAGES WITH PLURAL ACTIVE CHIPS - A microelectronic assembly is provided in which first and second electrically conductive pads exposed at front surfaces of first and second microelectronic elements, respectively, are juxtaposed, each of the microelectronic elements embodying active semiconductor devices. An electrically conductive element may extend within a first opening extending from a rear surface of the first microelectronic element towards the front surface thereof, within a second opening extending from the first opening towards the front surface of the first microelectronic element, and within a third opening extending through at least one of the first and second pads to contact the first and second pads. Interior surfaces of the first and second openings may extend in first and second directions relative to the front surface of the first microelectronic element, respectively, to define a substantial angle. | 02-20-2014 |
20140042644 | FLIP-CHIP, FACE-UP AND FACE-DOWN WIREBOND COMBINATION PACKAGE - A microelectronic assembly can include a substrate having an aperture extending between first and second surfaces thereof, the substrate having substrate contacts at the first surface and terminals at the second surface. The microelectronic assembly can include a first microelectronic element having a front surface facing the first surface, a second microelectronic element having a front surface facing the first microelectronic element, and leads electrically connecting the contacts of the second microelectronic element with the terminals. The second microelectronic element can have contacts exposed at the front surface thereof beyond an edge of the first microelectronic element. The first microelectronic element can be configured to regenerate at least some signals received by the microelectronic assembly at the terminals and to transmit said signals to the second microelectronic element. The second microelectronic element can embody a greater number of active devices to provide memory storage array function than any other function. | 02-13-2014 |
20140042634 | METHODS OF MAKING COMPLIANT SEMICONDUCTOR CHIP PACKAGES - A semiconductor chip package is fabricated including providing a compliant layer over a contact bearing face of a semiconductor chip, with a bottom surface of the compliant layer adjacent that chip face, a top surface facing away from the bottom surface, and at least one sloping surface extending between the top and bottom surfaces. Bond ribbons can be formed atop the compliant layer, each bond ribbon electrically coupling one of the contacts with an associated conductive terminal at the top surface of the compliant layer. A bond ribbon can include a strip extending along the sloping surface. The strip may have a substantially constant thickness in a direction away from the sloping surface. | 02-13-2014 |
20140038363 | TSOP WITH IMPEDANCE CONTROL - A semiconductor device of an illustrative embodiment includes a die, a lead frame including a plurality of leads having substantial portions arranged in a lead plane and electrically connected to the die. Most preferably, the package includes at least a substantial portion of one conductive element arranged in a plane positioned adjacent the lead frame and substantially parallel to the lead plane, the conductive element being capacitively coupled to the leads such that the conductive element and at least one of the leads cooperatively define a controlled-impedance conduction path, and an encapsulant which encapsulates the leads and the conductive element. The leads and, desirably, the conductive element have respective connection regions which are not covered by the encapsulant. | 02-06-2014 |
20140035121 | ENHANCED STACKED MICROELECTRONIC ASSEMBLIES WITH CENTRAL CONTACTS AND IMPROVED THERMAL CHARACTERISTICS - A microelectronic assembly includes a dielectric element that has oppositely-facing first and second surfaces and first and second apertures extending between the surfaces. The dielectric element further includes conductive elements. First and second microelectronic elements are stacked one on top of the another. The second microelectronic element has a plurality of contacts at a surface, which is spaced from the first surface of the dielectric element. Leads extend from contacts of the first and second microelectronic elements through respective apertures to at least some of the conductive elements. A heat spreader is thermally coupled to at least one of the first microelectronic element or the second microelectronic element. | 02-06-2014 |
20140027931 | STACK PACKAGES USING RECONSTITUTED WAFERS - A stacked microelectronic unit is provided which has a top surface and a bottom surface remote from the top surface and a plurality of vertically stacked microelectronic elements therein, including at least one microelectronic element having a front face adjacent to the top surface and a rear face oriented towards the bottom surface. Each of the microelectronic elements has traces extending from contacts at the front face beyond edges of the microelectronic element. A dielectric layer contacts edges of the microelectronic elements and underlies the rear face of the at least one microelectronic element. Leads are connected to the traces extending along the dielectric layer. Unit contacts, exposed at the top surface, are connected to the leads. | 01-30-2014 |
20140021641 | MICROELECTRONIC PACKAGES HAVING CAVITIES FOR RECEIVING MICROELECTRONIC ELEMENTS - Packaged microelectronic elements are provided which include a dielectric element, a cavity, a plurality of chip contacts and a plurality of package contacts, and microelectronic elements having a plurality of bond pads connected to the chip contacts. | 01-23-2014 |
20140003964 | ELECTROHYDRODYNAMIC (EHD) FLUID MOVER WITH FIELD BLUNTING STRUCTURES IN FLOW CHANNEL FOR SPATIALLY SELECTIVE SUPPRESSION OF ION GENERATION | 01-02-2014 |
20130344682 | STACKED PACKAGING IMPROVEMENTS - A plurality of microelectronic assemblies ( | 12-26-2013 |
20130344652 | RECONSTITUTED WAFER STACK PACKAGING WITH AFTER-APPLIED PAD EXTENSIONS - A stacked microelectronic unit is provided which can include a plurality of vertically stacked microelectronic elements each having a front surface, contacts exposed at the front surface, a rear surface and edges extending between the front and rear surfaces. Traces connected with the contacts may extend along the front surfaces towards edges of the microelectronic elements with the rear surface of at least one of the stacked microelectronic elements being adjacent to a top face of the microelectronic unit. A plurality of conductors may extend along edges of the microelectronic elements from the traces to the top face. The conductors may be conductively connected with unit contacts such that the unit contacts overlie the rear surface of the at least one microelectronic element adjacent to the top face. | 12-26-2013 |
20130341804 | SIMULTANEOUS WAFER BONDING AND INTERCONNECT JOINING - Disclosed are a microelectronic assembly of two elements and a method of forming same. A microelectronic element includes a major surface, and a dielectric layer and at least one bond pad exposed at the major surface. The microelectronic element may contain a plurality of active circuit elements. A first metal layer is deposited overlying the at least one bond pad and the dielectric layer. A second element having a second metal layer deposited thereon is provided, and the first metal layer is joined with the second metal layer. The assembly may be severed along dicing lanes into individual units each including a chip. | 12-26-2013 |
20130340981 | ELECTROHYDRODYNAMIC (EHD) AIR MOVER CONFIGURATION WITH FLOW PATH EXPANSION AND/OR SPREADING FOR IMPROVED OZONE CATALYSIS - Provision of an expansion region (e.g., a flow path with increasing cross-section downstream of the EHD air mover) can provide operational benefits in EHD air mover-based thermal management systems. In contrast, such a design would generally be disfavored for conventional mechanical air mover-based systems. In some cases, an expansion chamber or volume may be provided between the EHD air mover and heat transfer surfaces. In some cases, expansion of the flow cross-section may be provided (at least in part) within the heat transfer surface volume itself. In some cases, leading surfaces of heat transfer surface (e.g., heat sink fins) may be shaped, disposed or otherwise presented to EHD motivated flow to reduce “laminarity” of the impinging air flow so as to reduce thermal transfer boundary layer effects and/or to divert flow outward in the flow channel so as to more evenly distribute ozone molecules over catalytic sites. | 12-26-2013 |
20130330905 | EDGE CONNECT WAFER LEVEL STACKING - A method of making a stacked microelectronic package by forming a microelectronic assembly by stacking a first subassembly including a plurality of microelectronic elements onto a second subassembly including a plurality of microelectronic elements, at least some of the plurality of microelectronic elements of said first subassembly and said second subassembly having traces that extend to respective edges of the microelectronic elements, then forming notches in the microelectronic assembly so as to expose the traces of at least some of the plurality of microelectronic elements, then forming leads at the side walls of the notches, the leads being in electrical communication with at least some of the traces and dicing the assembly into packages. Additional embodiments include methods for creating stacked packages using substrates and having additional traces that extend to both the top and bottom of the package. | 12-12-2013 |
20130316501 | ULTRA-THIN NEAR-HERMETIC PACKAGE BASED ON RAINIER - A microelectronic package including a dielectric layer having top and bottom surfaces, the dielectric layer having terminals exposed at the bottom surface; a metallic wall bonded to the dielectric layer and projecting upwardly from the top surface of the dielectric layer and surrounding a region of the top surface; a metallic lid bonded to the wall and extending over the region of the top surface so that the lid, the wall and the dielectric layer cooperatively define an enclosed space; and a microelectronic element disposed within the space and electrically connected to the terminals. | 11-28-2013 |
20130313680 | HIGH DENSITY THREE-DIMENSIONAL INTEGRATED CAPACITORS - A component includes a substrate and a capacitor formed in contact with the substrate. The substrate can consist essentially of a material having a coefficient of thermal expansion of less than 10 ppm/° C. The substrate can have a surface and an opening extending downwardly therefrom. The capacitor can include at least first and second pairs of electrically conductive plates and first and second electrodes. The first and second pairs of plates can be connectable with respective first and second electric potentials. The first and second pairs of plates can extend along an inner surface of the opening, each of the plates being separated from at least one adjacent plate by a dielectric layer. The first and second electrodes can be exposed at the surface of the substrate and can be coupled to the respective first and second pairs of plates. | 11-28-2013 |
20130307138 | DESKEWED MULTI-DIE PACKAGES - A microelectronic package may have a plurality of terminals disposed at a face thereof which are configured for connection to at least one external component. e.g., a circuit panel. First and second microelectronic elements can be affixed with packaging structure therein. A first electrical connection can extend from a respective terminal of the package to a corresponding contact on the first microelectronic element, and a second electrical connection can extend from the respective terminal to a corresponding contact on the second microelectronic element, the first and second connections being configured such that a respective signal carried by the first and second connections in each group is subject to propagation delay of the same duration between the respective terminal and each of the corresponding contacts coupled thereto. | 11-21-2013 |
20130299958 | LEAD STRUCTURES WITH VERTICAL OFFSETS - A microelectronic structure includes a first row of contacts ( | 11-14-2013 |
20130260513 | MICROELECTRONIC PACKAGE WITH TERMINALS ON DIELECTRIC MASS - A package for a microelectronic element | 10-03-2013 |
20130249116 | MICROELECTRONIC PACKAGE - A microelectronic package includes a lower unit having a lower unit substrate with conductive features and a top and bottom surface. The lower unit includes one or more lower unit chips overly/ing the top surface of the lower unit substrate that are electrically connected to the conductive features of the lower unit substrate. The microelectronic package also includes an upper unit including an upper unit substrate having conductive features, top and bottom surfaces and a hole extending between such top and bottom surfaces. The upper unit further includes one or more upper unit chips overlying the top surface of the upper unit substrate and electrically connected to the conductive features of the upper unit substrate by connections extending within the hole. The upper unit may include an upper unit encapsulant that covers the connections of the upper unit and the one or more upper unit chips. | 09-26-2013 |
20130203216 | PACKAGE-ON-PACKAGE ASSEMBLY WITH WIRE BONDS TO ENCAPSULATION SURFACE - A method of making a microelectronic package includes forming a dielectric encapsulation layer on an in-process unit having a substrate having a first surface and a second surface remote therefrom. A microelectronic element is mounted to the first surface of the substrate, and a plurality of conductive elements exposed at the first surface, at least some of which are electrically connected to the microelectronic element. Wire bonds have bases joined to the conductive elements and end surfaces remote from the bases and define an edge surface extending away between the base and the end surface. The encapsulation layer is formed to at least partially cover the first surface and portions of the wire bonds with unencapsulated portions of the wire bonds being defined by at least one of the end surface or a portion of the edge surface that is uncovered thereby. | 08-08-2013 |
20130140716 | MICROELECTRONIC ASSEMBLY WITH IMPEDANCE CONTROLLED WIREBOND AND REFERENCE WIREBOND - A microelectronic device, e.g., semiconductor chip, is connected with an interconnection element having signal contacts and reference contacts, the reference contacts being connectable to a reference potential such as ground or power. Signal conductors, e.g., signal wirebonds can be connected to device contacts of the microelectronic device, and at least one reference conductor, e.g., reference wirebond can be connected with two reference contacts. The reference wirebond can have a run extending at an at least substantially uniform spacing from an at least a substantial portion of a length of a signal conductor, e.g., signal wirebond. In such manner a desired impedance may be achieved for the signal conductor. | 06-06-2013 |
20130127062 | MULTIPLE DIE FACE-DOWN STACKING FOR TWO OR MORE DIE - A microelectronic assembly can include a substrate having first and second surfaces each extending in first and second transverse directions, a peripheral edge extending in the second direction, first and second openings extending between the first and second surfaces, and a peripheral region of the second surface extending between the peripheral edge and one of the openings. The assembly can also include a first microelectronic element having a front surface facing the first surface, a rear surface opposite therefrom, and an edge extending between the front and rear surfaces. The assembly can also include a second microelectronic element having a front surface facing the rear surface of the first microelectronic element and projecting beyond the edge of the first microelectronic element. The assembly can also include a plurality of terminals exposed at the second surface, at least one of the terminals being disposed at least partially within the peripheral region. | 05-23-2013 |
20130100616 | MULTIPLE DIE STACKING FOR TWO OR MORE DIE - A microelectronic package can include a substrate having first and second opposed surfaces, and first and second microelectronic elements having front surfaces facing the first surface. The substrate can have a plurality of substrate contacts at the first surface and a plurality of terminals at the second surface. Each microelectronic element can have a plurality of element contacts at the front surface thereof. The element contacts can be joined with corresponding ones of the substrate contacts. The front surface of the second microelectronic element can partially overlie a rear surface of the first microelectronic element and can be attached thereto. The element contacts of the first microelectronic element can be arranged in an area array and are flip-chip bonded with a first set of the substrate contacts. The element contacts of the second microelectronic element can be joined with a second set of the substrate contacts by conductive masses. | 04-25-2013 |
20130099376 | MICROELECTRONIC PACKAGES WITH DUAL OR MULTIPLE-ETCHED FLIP-CHIP CONNECTORS - A packaged microelectronic element includes a microelectronic element having a front surface and a plurality of first solid metal posts extending away from the front surface. A substrate has a major surface and a plurality of conductive elements exposed at the major surface and joined to the first solid metal posts. In particular examples, the conductive elements can be bond pads or can be second posts having top surfaces and edge surfaces extending at substantial angles away therefrom. Each first solid metal post includes a base region adjacent the microelectronic element and a tip region remote from the microelectronic element, the base region and tip region having respective concave circumferential surfaces. Each first solid metal post has a horizontal dimension which is a first function of vertical location in the base region and which is a second function of vertical location in the tip region. | 04-25-2013 |
20130056870 | FLIP-CHIP, FACE-UP AND FACE-DOWN WIREBOND COMBINATION PACKAGE - A microelectronic assembly can include a substrate having oppositely-facing first and second surfaces and a first aperture extending between the first and second surfaces, a first microelectronic element having a surface facing the first surface, a second microelectronic element having a front surface facing the first microelectronic element, signal leads connected to contacts of the second microelectronic element and extending through the first aperture to at least some of a plurality of electrically conductive elements on the substrate, and at least one power regulation component having active circuit elements therein disposed between the first surface of the substrate and the front surface of the second microelectronic element. The first microelectronic element can have another surface remote from the surface of the first microelectronic element, and an edge extending between the surfaces thereof. The contacts of the second microelectronic element can project beyond the edge of the first microelectronic element. | 03-07-2013 |
20130056241 | EMITTER WIRE WITH LAYERED CROSS-SECTION - By selecting different materials for each layer, a multi-layered electrode structure can be made with superior performance characteristics. For example, a multilayered electrode can include a high tensile strength tungsten core, a conductive intermediate palladium, palladium-nickel, or other platinum group metal layer for generating a corona discharge, and a hardened layer comprising rhodium or other platinum group metal or alloy of the same to resist frictional abrasion during removal of silica dendrites that accumulate on the electrode surface during operation. | 03-07-2013 |
20130049196 | THROUGH INTERPOSER WIRE BOND USING LOW CTE INTERPOSER WITH COARSE SLOT APERTURES - A microelectronic package includes a subassembly, a second substrate, and a monolithic encapsulant. The subassembly includes a first substrate that has at least one aperture, a coefficient of thermal expansion (CTE) of eight parts per million per degree Celsius or less, and first and second contacts arranged so as to have a pitch of 200 microns or less. First and second microelectronic elements are respectively electrically connected to the first and second contacts. Wire bonds may be used to connect the second element contacts with the second contacts. A second substrate may underlie either the first or the second microelectronic elements and be electrically interconnected with the first substrate. The second substrate may have terminals configured for electrical connection to a component external to the microelectronic package. A monolithic encapsulant may contact the first and second microelectronic elements and the first and second substrates. | 02-28-2013 |
20130049179 | LOW COST HYBRID HIGH DENSITY PACKAGE - A microelectronic assembly includes a substrate, a first and second microelectronic elements, a lead finger, electrical connections extending between contacts of the second microelectronic element and the lead fingers, and an encapsulant overlying at least portions of the first and second microelectronic elements, lead finger and electrical connections. The substrate has contacts at a first surface and terminals at an opposed second surface that are electrically connected with the substrate contacts. The first microelectronic element has contacts exposed at its front face. The front face of the first microelectronic element is joined to the substrate contacts. The second microelectronic element overlies the first microelectronic element and has contacts at a front face facing away from the substrate. The lead frame has lead fingers, wherein the second surface of the substrate and the lead fingers define a common interface for electrical interconnection to a component external to the microelectronic assembly. | 02-28-2013 |
20130043935 | POWER BOOSTING CIRCUIT FOR SEMICONDUCTOR PACKAGING - A microelectronic package includes a microelectronic element operable to output a discrete-value logic signal indicating an imminent increase in demand for current by at least some portion of the microelectronic element. An active power delivery element within the package is operable by the logic signal to increase current delivery to the microelectronic element. | 02-21-2013 |
20130043582 | MULTIPLE DIE IN A FACE DOWN PACKAGE - A microelectronic package includes a subassembly including a first substrate and first and second microelectronic elements having contact-bearing faces facing towards oppositely-facing first and second surfaces of the first substrate and each having contacts electrically connected with the first substrate. The contact-bearing faces of the first and second microelectronic elements at least partially overlie one another. Leads electrically connect the subassembly with a second substrate, at least portions of the leads being aligned with an aperture in the second substrate. The leads can include wire bonds extending through an aperture in the first substrate and joined to contacts of the first microelectronic element aligned with the first substrate aperture. In one example, the subassembly can be electrically connected with the second substrate using electrically conductive spacer elements. | 02-21-2013 |
20130037925 | AREA ARRAY QFN - A microelectronic assembly can include a microelectronic element and a lead frame having a first unit and a second unit overlying the first unit and assembled therewith. The first unit can have a first metal layer comprising a portion of the thickness of the lead frame and including terminals and first conductive elements extending away therefrom. The second unit can have a second metal layer comprising a portion of the thickness of the lead frame and including bond pads and second conductive elements extending away therefrom. The first and second units each can have an encapsulation supporting at least portions of the respective first and second conductive elements. At least some of the second conductive elements can overlie portions of corresponding ones of the first conductive elements and can be joined thereto. The microelectronic element can have contacts electrically connected with the bond pads of the lead frame. | 02-14-2013 |
20130032944 | MICROELECTRONIC PACKAGE WITH STACKED MICROELECTRONIC ELEMENTS AND METHOD FOR MANUFACTURE THEREOF - A microelectronic package may include a stacked microelectronic unit including at least first and second vertically stacked microelectronic elements each having a front face facing a top surface of the package. The front face of the first element may be adjacent the top surface, and the first element may overlie the front face of the second element such that at least a portion of the front face of the second element having an element contact thereon extends beyond an edge of the first element. A conductive structure may electrically connect a first terminal at the top surface to an element contact at the front face of the second element, and include a continuous monolithic metal feature extending along the top surface and through at least a portion of an encapsulant, which is between the top surface and the front face of the second element, towards the element contact. | 02-07-2013 |
20130032934 | PACKAGED MICROELECTRONIC ELEMENTS HAVING BLIND VIAS FOR HEAT DISSIPATION - System and method for thermal management in a multi-chip packaged device. A microelectronic unit is disclosed, and includes a semiconductor element having a top surface and a bottom surface remote from the top surface. A semiconductor device including active elements is located adjacent to the top surface. Operation of the semiconductor device generates heat. Additionally, one or more first blind vias extend from the bottom surface and partially into a thickness of the semiconductor element. In that manner, the blind via does not contact or extend to the semiconductor device (defined as active regions of the semiconductor element, and moreover, is electrically isolated from the semiconductor device. A thermally conductive material fills the one or more first blind vias for heat dissipation. Specifically, heat generated by the semiconductor device thermally conducts from the semiconductor element, and is further distributed, transferred and/or dissipated through the one or more first blind vias to other connecting components. | 02-07-2013 |
20130032387 | MICROELECTRONIC PACKAGE WITH TERMINALS ON DIELECTRIC MASS - A package for a microelectronic element, such as a semiconductor chip, has a dielectric mass overlying the package substrate and microelectronic element and has top terminals exposed at the top surface of the dielectric mass. Traces extending along edge surfaces of the dielectric mass desirably connect the top terminals to bottom terminals on the package substrate. The dielectric mass can be formed, for example, by molding or by application of a conformal layer. | 02-07-2013 |
20130027899 | EMBEDDED PASSIVE INTEGRATION - System and method for embedded passive integration relating to a multi-chip packaged device. The packaged device includes a capacitance layer that is configured for electrical coupling to a power supply and to a reference power supply. Further, the capacitance layer is configured for filtering the power supply and providing a filtered power supply. A semiconductor layer including a logic device is configured for electrical coupling to the filtered power supply. | 01-31-2013 |
20130027056 | SYSTEM AND METHOD FOR TESTING FUSE BLOW RELIABILITY FOR INTEGRATED CIRCUITS - System and method for testing the reliability of a fuse blow condition. The fuse blow detection circuit includes a fuse circuit comprising a fuse having a first end coupled to ground. A common node is coupled to the second end of the fuse. A pre-charge circuit is coupled to the common node for pre-charging the common node to a pre-charged HIGH level. An inverter includes an inverter output and an inverter input, wherein the inverter input is coupled to the common node. A feedback latch is coupled between a voltage source and ground, and includes a latch input that is coupled to the inverter output and a latch output coupled to the common node. A test circuit is included that is coupled to the common node, wherein in a normal mode the test circuit adds strength to the feedback latch for purposes of maintaining the common node at the pre-charged HIGH level, such that in a test mode the feedback latch is weaker than in the normal mode for purposes of maintaining the common node at the pre-charged HIGH level. | 01-31-2013 |
20130026645 | LOW STRESS VIAS - A component can include a substrate having a front surface and a rear surface remote therefrom, an opening extending from the rear surface towards the front surface, and a conductive via extending within the opening. The substrate can have a CTE less than 10 ppm/° C. The opening can define an inner surface between the front and rear surfaces. The conductive via can include a first metal layer overlying the inner surface and a second metal region overlying the first metal layer and electrically coupled to the first metal layer. The second metal region can have a CTE greater than a CTE of the first metal layer. The conductive via can have an effective CTE across a diameter of the conductive via that is less than 80% of the CTE of the second metal region. | 01-31-2013 |
20130021715 | SYSTEM AND METHOD FOR IN-SITU CONDITIONING OF EMITTER ELECTRODE WITH SILVER - Cleaning and/or conditioning electrode surfaces can provide significant performance and operational benefits in EHD devices. In particular, conditioning of emitter electrode surfaces with silver (Ag), silver compositions or silver preparations applied in situ at successive times throughout the operating lifetime of an EHD air mover has been found to significantly reduce ozone production. Structures and techniques are described for in situ conditioning electrode surfaces and, in particular, emitter electrode surfaces of an EHD device such as an air mover or precipitator, with a conditioning material that includes silver. | 01-24-2013 |
20130015586 | DE-SKEWED MULTI-DIE PACKAGES - A microelectronic package may have a plurality of terminals disposed at a face thereof which are configured for connection to at least one external component. e.g., a circuit panel. First and second microelectronic elements can be affixed with packaging structure therein. A first electrical connection can extend from a respective terminal of the package to a corresponding contact on the first microelectronic element, and a second electrical connection can extend from the respective terminal to a corresponding contact on the second microelectronic element, the first and second connections being configured such that a respective signal carried by the first and second connections in each group is subject to propagation delay of the same duration between the respective terminal and each of the corresponding contacts coupled thereto. | 01-17-2013 |
20130014979 | Connector Structures and MethodsAANM Uzoh; CyprianAACI San JoseAAST CAAACO USAAGP Uzoh; Cyprian San Jose CA USAANM Mitchell; CraigAACI San JoseAAST CAAACO USAAGP Mitchell; Craig San Jose CA US - Electrical contacts comprising a surface with a plurality of cavities therein and their methods of manufacture and use. | 01-17-2013 |
20130014978 | Electrical Barrier LayersAANM Uzoh; CyprianAACI San JoseAAST CAAACO USAAGP Uzoh; Cyprian San Jose CA USAANM Oganesian; VageAACI Palo AltoAAST CAAACO USAAGP Oganesian; Vage Palo Alto CA USAANM Mohammed; IlyasAACI Santa ClaraAAST CAAACO USAAGP Mohammed; Ilyas Santa Clara CA USAANM Haba; BelgacemAACI SaratogaAAST CAAACO USAAGP Haba; Belgacem Saratoga CA USAANM Savalia; PiyushAACI Santa ClaraAAST CAAACO USAAGP Savalia; Piyush Santa Clara CA USAANM Mitchell; CraigAACI San JoseAAST CAAACO USAAGP Mitchell; Craig San Jose CA US - Barrier layers for use in electrical applications. In some embodiments the barrier layer is a laminated barrier layer. In some embodiments the barrier layer includes a graded barrier layer. | 01-17-2013 |
20130010441 | MICROELECTRONIC ELEMENTS WITH POST-ASSEMBLY PLANARIZATION - A microelectronic unit can include a carrier structure having a front surface, a rear surface remote from the front surface, and a recess having an opening at the front surface and an inner surface located below the front surface of the carrier structure. The microelectronic unit can also include a microelectronic element having a top surface adjacent the inner surface, a bottom surface remote from the top surface, and a plurality of contacts at the top surface. The microelectronic unit can also include terminals electrically connected with the contacts of the microelectronic element. The terminals can be electrically insulated from the carrier structure. The microelectronic unit can also include a dielectric region contacting at least the bottom surface of the microelectronic element. The dielectric region can define a planar surface located coplanar with or above the front surface of the carrier structure. | 01-10-2013 |
20130001757 | FLIP-CHIP QFN STRUCTURE USING ETCHED LEAD FRAME - A microelectronic unit can include a lead frame and a device chip. The lead frame can have a plurality of monolithic lead fingers extending in a plane of the lead frame. Each lead finger can have a fan-out portion and a chip connection portion extending in the lead frame plane. The fan-out portions can have first and second opposed surfaces and a first thickness in a first direction between the opposed surfaces. The chip connection portions can have a second thickness smaller than the first thickness. The chip connection portions can define a recess below the first surface. The device chip can have a plurality of at least one of passive devices or active devices. The device chip can have contacts thereon facing the chip connection portions and electrically coupled thereto. At least a portion of a thickness of the device chip can extend within the recess. | 01-03-2013 |
20120326326 | Systems and Methods for Producing Flat Surfaces in Interconnect Structures - Methods and apparatus for forming a semiconductor device are provided which may include any number of features. One feature is a method of forming an interconnect structure that results in the interconnect structure having a co-planar or flat top surface. Another feature is a method of forming an interconnect structure that results in the interconnect structure having a surface that is angled upwards greater than zero with respect to a top surface of the substrate. The interconnect structure can comprise a damascene structure, such as a single or dual damascene structure, or alternatively, can comprise a silicon-through via (TSV) structure. | 12-27-2012 |
20120326313 | SINGLE EXPOSURE IN MULTI-DAMASCENE PROCESS - Methods of fabricating a multi-layer semiconductor device such as a multi-layer damascene or inverted multi-layer damascene structure using only a single or reduced number of exposure steps. The method may include etching a precursor structure formed of materials with differential removal rates for a given removal condition. The method may include removing material from a multi-layer structure under different removal conditions. Further disclosed are multi-layer damascene structures having multiple cavities of different sizes. The cavities may have smooth inner wall surfaces. The layers of the structure may be in direct contact. The cavities may be filled with a conducting metal or an insulator. Multi-layer semiconductor devices using the methods and structures are further disclosed. | 12-27-2012 |
20120325517 | RELIABLE WIRE STRUCTURE AND METHOD - A wire structure, which may be configured for a semiconductor device, is disclosed. The wire may include an elongate flexible core formed of a conductor material and a cladding layer covering an outer surface of the core. The cladding layer may be a conductor. In various aspects the cladding layer and core have a different grain sizes. An average grain size of the core material may several orders of magnitude greater than an average grain size of the cladding layer material. The cladding layer may be an alloy having a varying concentration of a minor component across its thickness. Methods of forming a wire structure are also disclosed. | 12-27-2012 |
20120319282 | Reliable Packaging and Interconnect Structures - Methods and apparatus for forming a semiconductor device are provided which may include any number of features. One feature is a method of forming an interconnect structure that results in the interconnect structure having a top surface and portions of the side walls of the interconnect structure covered in a dissimilar material. In some embodiments, the dissimilar material can be a conductive material or a nano-alloy. The interconnect structure can be formed by removing a portion of the interconnect structure, and covering the interconnect structure with the dissimilar material. The interconnect structure can comprise a damascene structure, such as a single or dual damascene structure, or alternatively, can comprise a silicon-through via (TSV) structure. | 12-20-2012 |
20120314384 | LOW-STRESS TSV DESIGN USING CONDUCTIVE PARTICLES - A component can include a substrate having a first surface and a second surface remote therefrom, an opening extending in a direction between the first and second surfaces, and a conductive via extending within the opening. The substrate can have a CTE less than 10 ppm/° C. The conductive via can include a plurality of base particles each including a first region of a first metal substantially covered by a layer of a second metal different from the first metal. The base particles can be metallurgically joined together and the second metal layers of the particles can be at least partially diffused into the first regions. The conductive via can include voids interspersed between the joined base particles. The voids can occupy 10% or more of a volume of the conductive via. | 12-13-2012 |
20120314334 | EHD DEVICE IN-SITU AIRFLOW - An electrohydrodynamic (EHD) air mover is positionable within the enclosure to, when energized, motivate air flow through the enclosure along a flow path between the inlet and outlet ventilation boundaries. Ductwork within the enclosure has cross-sections substantially matched to a cross-section of the EHD air mover. A fan curve-type, pressure-air flow characteristic measured for the EHD air mover in open air substantially overstates mechanical impedance of the EHD air mover to air flow along the flow path between the inlet and outlet ventilation boundaries in that, when the EHD air mover is operably positioned within the enclosure appurtenant to the ductwork, no more than about 50% of the mechanical impedance of the EHD air mover indicated by the measured fan curve-type, pressure-air flow characteristic actually contributes to total mechanical impedance to air flow through the enclosure along the flow path between the inlet and outlet ventilation boundaries. | 12-13-2012 |
20120313242 | SUBSTRATE AND ASSEMBLY THEREOF WITH DIELECTRIC REMOVAL FOR INCREASED POST HEIGHT - An interconnection substrate includes a plurality of electrically conductive elements of at least one wiring layer defining first and second lateral directions. Electrically conductive projections for bonding to electrically conductive contacts of at least one component external to the substrate, extend from the conductive elements above the at least one wiring layer. The conductive projections have end portions remote from the conductive elements and neck portions between the conductive elements and the end portions. The end portions have lower surfaces extending outwardly from the neck portions in at least one of the lateral directions. The substrate further includes a dielectric layer overlying the conductive elements and extending upwardly along the neck portions at least to the lower surfaces. At least portions of the dielectric layer between the conductive projections are recessed below a height of the lower surfaces. | 12-13-2012 |
20120313239 | FLIP CHIP ASSEMBLY AND PROCESS WITH SINTERING MATERIAL ON METAL BUMPS - A microelectronic package includes a substrate overlying the front face of a microelectronic element. A plurality of metal bumps can project from conductive elements of the substrate towards the microelectronic element, the metal bumps having first ends extending from the conductive elements, second ends remote from the conductive elements, and lateral surfaces extending between the first and second ends. A conductive matrix material can contact the second ends and at least portions of the lateral surfaces of respective ones of the metal bumps and join the metal bumps with contacts of the microelectronic element. | 12-13-2012 |
20120313228 | IMPEDENCE CONTROLLED PACKAGES WITH METAL SHEET OR 2-LAYER RDL - A microelectronic assembly includes an interconnection element, a conductive plane, a microelectronic device, a plurality of traces, and first and second bond elements. The interconnection element includes a dielectric element, a plurality of element contacts, and at least one reference contact thereon. The microelectronic device includes a front surface with device contacts exposed thereat. The conductive plane overlies a portion of the front surface of the microelectronic device. Traces overlying a surface of the conductive plane are insulated therefrom and electrically connected with the element contacts. The traces also have substantial portions spaced a first height above and extending at least generally parallel to the conductive plane, such that a desired impedance is achieved for the traces. First bond element electrically connects the at least one conductive plane with the at least one reference contact. Second bond elements electrically connect device contacts with the traces. | 12-13-2012 |
20120306092 | CONDUCTIVE PADS DEFINED BY EMBEDDED TRACES - An assembly and method of making same are provided. The assembly can include a first component including a dielectric region having an exposed surface, a conductive pad at the surface defined by a conductive element having at least a portion extending in an oscillating or spiral path along the surface, and a an electrically conductive bonding material joined to the conductive pad and bridging an exposed portion of the dielectric surface between adjacent segments. The conductive pad can permit electrical interconnection of the first component with a second component having a terminal joined to the pad through the electrically conductive bonding material. The path of the conductive element may or may not overlap or cross itself. | 12-06-2012 |
20120280386 | PACKAGE-ON-PACKAGE ASSEMBLY WITH WIRE BONDS TO ENCAPSULATION SURFACE - A microelectronic assembly includes a substrate having a first surface and a second surface remote from the first surface. A microelectronic element overlies the first surface and first electrically conductive elements are exposed at one of the first surface and the second surface. Some of the first conductive elements are electrically connected to the microelectronic element. Wire bonds have bases joined to the conductive elements and end surfaces remote from the substrate and the bases, each wire bond defining an edge surface extending between the base and the end surface. An encapsulation layer extends from the first surface and fills spaces between the wire bonds such that the wire bonds are separated by the encapsulation layer. Unencapsulated portions of the wire bonds are defined by at least portions of the end surfaces of the wire bonds that are uncovered by the encapsulation layer. | 11-08-2012 |
20120268857 | ELECTROHYDRODYNAMIC (EHD) FLUID MOVER WITH FIELD SHAPING FEATURE AT LEADING EDGE OF COLLECTOR ELECTRODES - Small form-factor ion flow fluid movers that provide electrostatically operative surfaces in a flow channel adjacent to an emitter electrode, but upstream of a collector electrode or electrodes, can shape operative electric fields and influence ion flows in ways that accentuate downstream flow while minimizing upstream ion migration. In some cases, dielectric surfaces (or even electrically isolated conductive surfaces) along a flow channel adjacent to an emitter electrode can be configured to collect and retain an initial population of generated ions and thereafter electrostatically repel further ions. Depending on the configuration of such dielectric or electrically isolated conductive surfaces, these repelling electrostatic forces may dissuade ion migration or flow from sensitive but closely proximate components and/or may shape fields to enhance ion flows in a desired downstream direction. | 10-25-2012 |
20120267798 | MULTIPLE DIE FACE-DOWN STACKING FOR TWO OR MORE DIE - A microelectronic assembly is disclosed that comprises a substrate having first and second openings, a first microelectronic element and a second microelectronic element in a face-down position. The first element has an active surface facing the front surface of the substrate and bond pads aligned with the first opening, a rear surface remote therefrom, and an edge extending between the front and rear surfaces. The second microelectronic element has a front surface facing the first microelectronic element and projecting beyond an edge of the first microelectronic element, and bond pads at the front surface of the second microelectronic element aligned with the second opening. | 10-25-2012 |
20120267797 | FLIP-CHIP, FACE-UP AND FACE-DOWN WIREBOND COMBINATION PACKAGE - A microelectronic assembly can include a substrate having an aperture extending between first and second surfaces thereof, the substrate having substrate contacts at the first surface and terminals at the second surface. The microelectronic assembly can include a first microelectronic element having a front surface facing the first surface, a second microelectronic element having a front surface facing the first microelectronic element, and leads electrically connecting the contacts of the second microelectronic element with the terminals. The second microelectronic element can have contacts exposed at the front surface thereof beyond an edge of the first microelectronic element. The first microelectronic element can be configured to regenerate at least some signals received by the microelectronic assembly at the terminals and to transmit said signals to the second microelectronic element. The second microelectronic element can embody a greater number of active devices to provide memory storage array function than any other function. | 10-25-2012 |
20120267796 | FLIP-CHIP, FACE-UP AND FACE-DOWN CENTERBOND MEMORY WIREBOND ASSEMBLIES - A microelectronic assembly can include a substrate having first and second surfaces and an aperture extending therebetween, the substrate having terminals. The assembly can also include a first microelectronic element having a front surface facing the first surface of the substrate, a second microelectronic element having a front surface facing the first microelectronic element and projecting beyond an edge of the first microelectronic element, first and second leads electrically connecting contacts of the respective first and second microelectronic elements to the terminals, and third leads electrically interconnecting the contacts of the first and second microelectronic elements. The contacts of the first microelectronic element can be exposed at the front surface thereof adjacent the edge thereof. The contacts of the second microelectronic element can be disposed in a central region of the front surface thereof. The first, second, and third leads can have portions aligned with the aperture. | 10-25-2012 |
20120267771 | STACKED CHIP-ON-BOARD MODULE WITH EDGE CONNECTOR - A module can include a module card and first and second microelectronic elements having front surfaces facing a first surface of the module card. The module card can also have a second surface and a plurality of parallel exposed edge contacts adjacent an edge of at least one of the first and second surfaces for mating with corresponding contacts of a socket when the module is inserted in the socket. Each microelectronic element can be electrically connected to the module card. The front surface of the second microelectronic element can partially overlie a rear surface of the first microelectronic element and can be attached thereto. | 10-25-2012 |
20120241960 | SUBSTRATE FOR A MICROELECTRONIC PACKAGE AND METHOD OF FABRICATING THEREOF - Substrates having molded dielectric layers and methods of fabricating such substrates are disclosed. The substrates may advantageously be used in microelectronic assemblies having high routing density. | 09-27-2012 |
20120205079 | ELECTRONIC SYSTEM ADAPTED FOR PASSIVE CONVECTIVE COOLING AND STAGED USE OF ELECTROHYDRODYNAMIC (EHD) AND MECHANICAL AIR MOVERS FOR QUIET FORCED CONVECTION ASSIST - Flow paths, duct work, ventilation boundaries, and/or placement of EHD and mechanical air mover within a electronic device enclosure can all affect the efficacy of a thermal management solution that seeks to provide silent air cooling over a significant thermal operating envelope with staged introduction of electrohydrodynamic (EHD) and mechanical air mover devices. For electronic devices in which it is desirable to employ passive, unforced convective cooling over a portion of the thermal operating envelope, practical designs for consumer electronics form factors may be quite sensitive to flow path, duct work and ventilation boundary design as well as to the placement of EHD and mechanical air mover components relative thereto and to each other. A range of inventive solutions that have been developed to address some or all of these design challenges. | 08-16-2012 |
20120196650 | WEARABLE ULTRA-THIN MINIATURIZED MOBILE COMMUNICATIONS - A cellular telephone is provided with a wearable housing, desirably in a form which can be concealed in the user's clothing, wallet, or other place. The housing may be devoid of switches or buttons for controlling the cellular telephone, and control inputs can be provided through free space communications such as a short-range radio link. A module for use in portable communications devices includes chips superposed on one another on a stack, and incorporates an interposer for facilitating connections between the chips. | 08-02-2012 |
20120155055 | SEMICONDUCTOR CHIP ASSEMBLY AND METHOD FOR MAKING SAME - A microelectronic assembly may include a substrate including a rigid dielectric layer having electrically conductive elements, a microelectronic element having a plurality of contacts exposed at a face thereof, and conductive vias extending through a compliant dielectric layer overlying the rigid dielectric layer. The vias electrically connect the substrate contacts respectively to the conductive elements, and the substrate contacts are joined respectively to the contacts of the microelectronic element. The vias, compliant layer and substrate contacts are adapted to appreciably relieve stress at the substrate contacts associated with differential thermal contact and expansion of the assembly. | 06-21-2012 |
20120155042 | ENHANCED STACKED MICROELECTRONIC ASSEMBLIES WITH CENTRAL CONTACTS AND IMPROVED GROUND OR POWER DISTRIBUTION - A microelectronic assembly includes a dielectric element, first and second microelectronic elements, signal leads, and one or more jumper leads. The dielectric element has oppositely-facing first and second surfaces and first and second apertures extend between the surfaces. A plurality of electrically conductive elements are positioned thereon. Signal leads are connected to one or more of the microelectronic elements and extend through one or more of the first or second apertures to some of the conductive elements on the dielectric element. One or more jumper leads extend through the first aperture and are connected to a contact of the first microelectronic element. The one or more jumper leads span over the second aperture and are connected to a conductive element on the dielectric element. | 06-21-2012 |
20120153443 | PACKAGED SEMICONDUCTOR CHIPS WITH ARRAY - A chip-sized, wafer level packaged device including a portion of a semiconductor wafer including a device, at least one packaging layer containing silicon and formed over the device, a first ball grid array formed over a surface of the at least one packaging layer and being electrically connected to the device and a second ball grid array formed over a surface of the portion of the semiconductor wafer and being electrically connected to the device. | 06-21-2012 |
20120153435 | ENHANCED STACKED MICROELECTRONIC ASSEMBLIES WITH CENTRAL CONTACTS AND IMPROVED GROUND OR POWER DISTRIBUTION - A microelectronic assembly includes a dielectric element having at least one aperture and electrically conductive elements thereon including terminals exposed at the second surface of the dielectric element; a first microelectronic element having a rear surface and a front surface facing the dielectric element, the first microelectronic element having a plurality of contacts exposed at the front surface thereof; a second microelectronic element having a rear surface and a front surface facing the rear surface of the first microelectronic element, the second microelectronic element having a plurality of contacts exposed at the front surface and projecting beyond an edge of the first microelectronic element; and an electrically conductive plane attached to the dielectric element and at least partially positioned between the first and second apertures, the electrically conductive plane being electrically connected with one or more of the contacts of at least one of the first or second microelectronic elements. | 06-21-2012 |
20120133057 | EDGE CONNECT WAFER LEVEL STACKING - A stacked microelectronic assembly includes a first stacked subassembly and a second stacked subassembly overlying a portion of the first stacked subassembly. Each stacked subassembly includes at least a respective first microelectronic element having a face and a respective second microelectronic element having a face overlying and parallel to a face of the first microelectronic element. Each of the first and second microelectronic elements has edges extending away from the respective face. A plurality of traces at the respective face extend about at least one respective edge. Each of the first and second stacked subassemblies includes contacts connected to at least some of the plurality of traces. Bond wires conductively connect the contacts of the first stacked subassembly with the contacts of the second stacked subassembly. | 05-31-2012 |
20120126407 | WAFER LEVEL CHIP PACKAGE AND A METHOD OF FABRICATING THEREOF - Wafer level chip packages including risers having sloped sidewalls and methods of fabricating such chip packages are disclosed. The inventive wafer level chip packages may advantageously be used in various microelectronic assemblies. | 05-24-2012 |
20120121487 | ELECTRONIC SYSTEM WITH VENTILATION PATH THROUGH INLET-POSITIONED EHD AIR MOVER, OVER OZONE REDUCING SURFACES, AND OUT THROUGH OUTLET-POSITIONED HEAT EXCHANGER - An electronic system enclosure houses a plurality of electronic components together presenting one or more surfaces coated with ozone reducing material. An EHD air mover positioned remote from an outlet ventilation boundary of the enclosure motivates air flow through the enclosure along a flow path past the one or more surfaces coated with ozone destructive material over heat transfer surfaces and out through an outlet ventilation boundary of the enclosure. | 05-17-2012 |
20120120543 | ION PROTECTION TECHNIQUE FOR ELECTRONIC SYSTEM WITH FLOW BETWEEN INTERNAL AIR PLENUM AND AN EHD DEVICE - Techniques are described for integration of EHD-type air movers with electronic systems, and in particular, for limiting infiltration of ions and/or charged particulates into an internal air plenum. In some designs, it may be desirable to allow or even encourage EHD motivated air flow (whether drawn or forced) through the internal air plenum while providing a barrier to transit of ions and/or charged particulates that may be generated during EHD operation. Such a barrier may employ electrostatic forces to impede transit of ions and/or charged particulate across a vent positioned to allow air flow from or into the internal air plenum. In some cases, an electrostatic barrier may include a fluid permeable mesh or grill that spans a substantial cross-section of the vent. | 05-17-2012 |
20120120542 | ELECTRONIC SYSTEM CHANGEABLE TO ACCOMMODATE AN EHD AIR MOVER OR MECHANICAL AIR MOVER - An electronic system is configurable to accommodate either of a mechanical air mover and an EHD air mover within an enclosure. At least one of a plurality of electronic components is selectively configurable to alternately accommodate the mechanical air mover or the EHD air mover within the enclosure. The mechanical fan or EHD is positioned to motivate air flow along a air flow path between inlet and outlet ventilation boundaries of the enclosure. A connector for a respective one of the electronic components allows for selective configuration in an alternate orientation of the respective one of the electronic components to accommodate a difference in geometry between the EHD air mover and the mechanical air mover. | 05-17-2012 |
20120119380 | MICROELECTRONIC PACKAGE WITH TERMINALS ON DIELECTRIC MASS - A package for a microelectronic element, such as a semiconductor chip, has a dielectric mass overlying the package substrate and microelectronic element and has top terminals exposed at the top surface of the dielectric mass. Traces extending along edge surfaces of the dielectric mass desirably connect the top terminals to bottom terminals on the package substrate. The dielectric mass can be formed, for example, by molding or by application of a conformal layer. | 05-17-2012 |
20120113590 | ELECTRONIC SYSTEM WITH EHD AIR MOVER VENTILATION PATH ISOLATED FROM INTERNAL AIR PLENUM - An electronic system including an enclosure and an internal air plenum within the enclosure. At least one component of the electronic system within the enclosure evolves heat and has a surface exposed to the internal air plenum. The enclosure has inlet and outlet ventilation boundaries together with an EHD air mover disposed therein to motivate airflow along a flow path between the inlet and outlet ventilation boundaries, wherein the flow path is substantially excluded from the internal air plenum by a barrier. | 05-10-2012 |
20120103568 | Layered Emitter Coating Structure for Crack Resistance with PDAG Coatings - A thermal management apparatus includes an electrohydrodynamic fluid accelerator in which an emitter electrode and another electrode are energizable to motivate fluid flow. The emitter electrode is a layered structure including an electrode core material and an outermost coating that is susceptible to micro-cracking or corona erosion. A barrier material is provided in a sublayer to protect the underlying electrode core material. An adhesion promoting layer may be used between the barrier material and the electrode core material or between other layers of the structure. solid solution. A method of making an EHD product includes positioning the layered electrode relative to another electrode to motivate fluid flow when energized. | 05-03-2012 |
20120103196 | Electrohydrodynamic Device Components Employing Solid Solutions - A thermal management apparatus includes an electrohydrodynamic fluid accelerator in which an emitter electrode and another electrode are energizable to motivate fluid flow. One of the electrodes includes a solid solution formed of a solvent metal having a first performance characteristic and a solute material having a second performance characteristic. The first and second performance characteristics are exhibited substantially independently in the electrode as the solvent metal and solute material remain substantially pure within the solid solution. A method of making an EHD product includes providing an electrode with such a solid solution and positioning the electrode relative to another electrode to motivate fluid flow when energized. | 05-03-2012 |
20120097028 | ELECTRODE CLEANING IN AN ELECTRO-KINETIC AIR MOVER - An electro-kinetic or electro-static apparatus for moving fluid includes an enlogated electrode energizable with respect to at least one other electrode to generate ions and thereby motivate fluid flow there between. A cleaning device is positioned to frictionally engage at least two opposing surfaces of the elongated electrode. The cleaning device is movable along a length of the elongated electrode to thereby remove detrimental material from the at least two opposing surfaces of the elongated electrode. The cleaning device can be substantially off-center relative to the elongated electrode to frictionally bind upon the elongated electrode during movement of the cleaning device. | 04-26-2012 |
20120091582 | MICROELECTRONIC ASSEMBLIES HAVING COMPLIANCY AND METHODS THEREFOR - A microelectronic assembly is disclosed that includes a semiconductor wafer with contacts, compliant bumps of dielectric material overlying the first surface of the semiconductor wafer, and a dielectric layer overlying the first surface of the semiconductor wafer and edges of the compliant bumps. The compliant bumps have planar top surfaces which are accessible through the dielectric layer. Conductive traces may be electrically connected with contacts and extend therefrom to overlie the planar top surfaces of the compliant bumps. Conductive elements may overlie the planar top surfaces in contact with the conductive traces. | 04-19-2012 |
20120080807 | OFF-CHIP VIAS IN STACKED CHIPS - A microelectronic assembly includes first and second stacked microelectronic elements, each having spaced apart traces extending along a front face and beyond at least a first edge thereof. An insulating region can contact the edges of each microelectronic element and at least portions of the traces of each microelectronic element extending beyond the respective first edges. The insulating region can define first and second side surfaces adjacent the first and second edges of the microelectronic elements. A plurality of spaced apart openings can extend along a side surface of the microelectronic assembly. Electrical conductors connected with respective traces can have portions disposed in respective openings and extending along the respective openings. The electrical conductors may extend to pads or solder balls overlying a face of one of the microelectronic elements. | 04-05-2012 |
20120056324 | SUBSTRATE FOR A MICROELECTRONIC PACKAGE AND METHOD OF FABRICATING THEREOF - Substrates having molded dielectric layers and methods of fabricating such substrates are disclosed. The substrates may advantageously be used in microelectronic assemblies having high routing density. | 03-08-2012 |
20120043891 | Electrostatic Fluid Accelerator for Controlling a Fluid Flow - An electrostatic fluid accelerator includes an electrode array comprising a corona discharge electrode and an array of accelerating electrodes for moving a fluid. A control circuit supplies power to the electrode array including control of a corona discharge voltage and a heating current to cause the corona discharge electrode to vibrate. The control circuit also controls heating of heating elements and can operate the electrostatic fluid accelerator in response to an detection of a constituent of the fluid. | 02-23-2012 |
20120032349 | METHOD OF FABRICATING STACKED ASSEMBLY INCLUDING PLURALITY OF STACKED MICROELECTRONIC ELEMENTS - A method is provided for fabricating a stacked microelectronic assembly by steps including stacking and joining first and second like microelectronic substrates, each including a plurality of like microelectronic elements attached together at dicing lanes. Each microelectronic element has boundaries defined by edges including a first edge and a second edge. The first and second microelectronic substrates can be joined in different orientations, such that first edges of microelectronic elements of the first microelectronic substrate are aligned with second edges of microelectronic elements of the second microelectronic substrate. After exposing traces at the first and second edges of the microelectronic elements of the stacked microelectronic substrates, first and second leads can be formed which are connected to the exposed traces of the first and second microelectronic substrates, respectively. The second leads can be electrically isolated from the first leads. | 02-09-2012 |
20120013028 | STACKED MICROELECTRONIC PACKAGES HAVING AT LEAST TWO STACKED MICROELECTRONIC ELEMENTS ADJACENT ONE ANOTHER - A microelectronic assembly includes first and second microelectronic elements. Each of the microelectronic elements has oppositely-facing first and second surfaces and edges bounding the surfaces. The first microelectronic element is disposed on the second microelectronic element with the second surface of the first microelectronic element facing toward the first surface of the second microelectronic element. The first microelectronic element preferably extends beyond at least one edge of the second microelectronic element and the second microelectronic element preferably extends beyond at least one edge of the first microelectronic element. A first edge of the first microelectronic element has a length that is smaller than a first edge of the second microelectronic element. A second edge of the first microelectronic element has a length that is greater than the second edge of the second microelectronic element. | 01-19-2012 |
20120000627 | ELECTROSTATIC PRECIPITATOR PRE-FILTER FOR ELECTROHYDRODYNAMIC FLUID MOVER - Electrostatic precipitation is performed upstream of collector electrode surfaces toward which a downstream EHD fluid mover accelerates fluid flow. In this way, the upstream electrostatic precipitator (ESP) acts as a pre-filter (with low flow-impedance) and can reduce accumulation of otherwise detrimental materials on downstream electrodes and/or arcing. In some cases, pre-filtering by an upstream electrostatic precipitator may also reduce accumulation of otherwise detrimental materials on downstream heat transfer surfaces and/or ozone catalytic or reactive surfaces/materials. In some embodiments, an EHD fluid mover with an ESP pre-filter is used in a thermal management system to dissipate heat generated by a thermal source. | 01-05-2012 |
20120000486 | EMITTER WIRE CLEANING DEVICE WITH WEAR-TOLERANT PROFILE - An apparatus for cleaning an emitter electrode in electrohydrodynamic fluid accelerator and precipitator devices via movement of a cleaning device including complementary contoured cleaning surfaces positioned to frictionally engage and elastically deform the emitter electrode. The opposing cleaning surfaces laterally distort an otherwise linear longitudinal extent of the electrode under tension. The opposing cleaning surfaces are subject to wear, but maintain frictional engagement despite wear depths that exceed a radius of the electrode due at least in part to the at least partially complementary surface contours engaging the electrode under tension. The cleaning device causes respective cleaning surfaces to travel along a longitudinal extent of the emitter electrode to remove detrimental material and optionally to condition the electrode to at least partially mitigate ozone, erosion, corrosion, oxidation, or dendrite formation on the electrode. | 01-05-2012 |
20110308775 | ELECTROHYDRODYNAMIC DEVICE WITH FLOW HEATED OZONE REDUCING MATERIAL - A thermal management apparatus includes an electrohydrodynamic fluid accelerator energizable to motivate fluid flow. Primary heat transfer surfaces are positioned to transfer heat into the fluid flow and an ozone reducing material is positioned downstream of the primary heat transfer surfaces. Heating of the ozone reducing material by the fluid flow increases the efficacy of the ozone reducing material. A method of making a product includes positioning an emitter electrode and at least one other electrode to motivate fluid flow along a flow path when the electrodes are energized. The method further includes positioning heat transfer surfaces in the flow path to transfer heat to the fluid flow and positioning ozone reducing material downstream of the heat transfer surfaces in the flow path, the ozone reducing material selected such that heating of the ozone reducing material by the fluid flow increases ozone reducing efficacy of the ozone reducing material. | 12-22-2011 |
20110308773 | GRANULAR ABRASIVE CLEANING OF AN EMITTER WIRE - An apparatus for cleaning an emitter electrode in electrohydrodynamic fluid accelerator and precipitator devices via movement of a cleaning device including granular abrasives positioned to frictionally engage the emitter electrode. The cleaning device causes the granular abrasives to travel along a longitudinal extent of the emitter electrode to remove detrimental material accumulated on the electrode. The granular abrasives can be retained in housing, on opposed cleaning surfaces, and can be compressed by the housing or an applied force to abrade detrimental material from the electrode surface. | 12-22-2011 |
20110308768 | CLEANING MECHANISM WITH TANDEM MOVEMENT OVER EMITTER AND COLLECTOR SURFACES - An apparatus for tandem cleaning of an emitter electrode and collector electrode in electrohydrodynamic fluid accelerator and precipitator devices via movement of a cleaning mechanism including respective cleaning surfaces positioned to frictionally engage the emitter electrode and collector electrode. The cleaning mechanism causes the respective cleaning surfaces to travel along a longitudinal extent of the emitter electrode and, in tandem, over a major dimension of the collector electrode to remove detrimental material from respective electrode surfaces. Alternatively, the electrodes can be transited in tandem in frictional engagement with a fixed cleaning mechanism in the same or opposite directions. A conditioning material is optionally deposited on an electrode to at least partially mitigate ozone, erosion, corrosion, oxidation, or dendrite formation on the electrodes. The conditioning material can include an ozone reducer. | 12-22-2011 |
20110291297 | MICROELECTRONIC PACKAGES HAVING CAVITIES FOR RECEIVING MICROELECTRONIC ELEMENTS - Packaged microelectronic elements are provided which include a dielectric element, a cavity, a plurality of chip contacts and a plurality of package contacts, and microelectronic elements having a plurality of bond pads connected to the chip contacts. | 12-01-2011 |
20110291296 | PACKAGE STACKING THROUGH ROTATION - A packaged microelectronic element includes a package element that further includes a dielectric element having a bottom face and a top face, first and second bond windows extending between the top and bottom faces, a plurality of chip contacts disposed at the top face adjacent to the first and second bond windows, and first and second sets of package contacts exposed at diagonally opposite corner regions of the top face, wherein the first and second sets conductively connected to the chip contacts. There is also a microelectronic element adjacent to the bottom face of the dielectric element, as well as bond wires extending through the first and second bond windows to conductively connect the microelectronic element to the chip contacts. | 12-01-2011 |
20110286892 | ELECTRO-KINETIC AIR MOVER WITH UPSTREAM FOCUS ELECTRODE SURFACES - An electro-kinetic air mover for creating an airflow using no moving parts. The electro-kinetic air mover includes an ion generator that has an electrode assembly including a first array of emitter electrodes, a second array of collector electrodes, and a high voltage generator. Preferably, a third or leading or focus electrode is located upstream of the first array of emitter electrodes, and/or a trailing electrode is located downstream of the second array of collector electrodes. The device can also include an interstitial electrode located between collector electrodes, an enhanced collector electrode with an integrally formed trailing end, and an enhanced emitter electrode with an enhanced length in order to increase emissivity. | 11-24-2011 |
20110269272 | MICROELECTRONIC PACKAGES AND METHODS THEREFOR - A microelectronic package includes a microelectronic element having faces and contacts, the microelectronic element having an outer perimeter, and a substrate overlying and spaced from a first face of the microelectronic element, whereby an outer region of the substrate extends beyond the outer perimeter of the microelectronic element. The microelectronic package includes a plurality of etched conductive posts exposed at a surface of the substrate and being electrically interconnected with the microelectronic element, whereby at least one of the etched conductive posts is disposed in the outer region of the substrate. The package includes an encapsulating mold material in contact with the microelectronic element and overlying the outer region of the substrate, the encapsulating mold material extending outside of the etched conductive posts for defining an outermost edge of the microelectronic package. | 11-03-2011 |
20110266668 | MICROELECTRONIC ASSEMBLIES HAVING COMPLIANCY - A microelectronic assembly includes a microelectronic element, such as a semiconductor wafer or semiconductor chip, having a first surface and contacts accessible at the first surface, and a compliant layer overlying the first surface of the microelectronic element, the compliant layer having openings in substantial alignment with the contacts of the microelectronic element. The assembly desirably includes conductive posts overlying the compliant layer and projecting away from the first surface of the microelectronic element, the conductive posts being electrically interconnected with the contacts of the microelectronic element by elongated, electrically conductive elements extending between the contacts and the conductive posts. | 11-03-2011 |
20110265832 | ELECTRODE CONDITIONING IN AN ELECTROHYDRODYNAMIC FLUID ACCELERATOR DEVICE - Conditioning an electrode is performed with a cleaning device for removing detrimental material from forming electrode surfaces of an electrohydrodynamic device or other ion flow generating device. A conditioning material is deposited on the electrode to at least partially mitigate erosion, corrosion, oxidations, dendrite formation on the electrode or ozone production. The conditioning material can be deposited by a wearable portion of one or more cleaning blocks or wipers. The cleaning blocks may have a composition selected to be hard enough to remove detrimental material under a selected pressure, while soft enough to be wearable to deposit a conditioning layer on the electrode surface. The conditioning material can be applied as a solid or liquid. The applied conditioning material can include at least one of silver, palladium, platinum, manganese, nickel, zirconium, titanium, tungsten, aluminum, oxides or alloys thereof, carbon, and organometallic materials that decompose under plasma conditions. | 11-03-2011 |
20110260320 | METHOD OF MAKING A CONNECTION COMPONENT WITH POSTS AND PADS - A packaged microelectronic element includes connection component incorporating a dielectric layer ( | 10-27-2011 |
20110248410 | STACK PACKAGES USING RECONSTITUTED WAFERS - A stacked microelectronic unit is provided which has a top surface and a bottom surface remote from the top surface and a plurality of vertically stacked microelectronic elements therein, including at least one microelectronic element having a front face adjacent to the top surface and a rear face oriented towards the bottom surface. Each of the microelectronic elements has traces extending from contacts at the front face beyond edges of the microelectronic element. A dielectric layer contacts edges of the microelectronic elements and underlies the rear face of the at least one microelectronic element. Leads are connected to the traces extending along the dielectric layer. Unit contacts, exposed at the top surface, are connected to the leads. | 10-13-2011 |
20110230013 | STACKED PACKAGES WITH BRIDGING TRACES - A microelectronic assembly that includes a first microelectronic element having a first rear surface. The assembly further includes a second microelectronic element having a second rear surface. The second microelectronic element is attached to the first microelectronic element so as to form a stacked package. A bridging element electrically connects the first microelectronic element and the second microelectronic element. The first rear surface of the first microelectronic element faces toward the second rear surface of the second microelectronic element. | 09-22-2011 |
20110187007 | EDGE CONNECT WAFER LEVEL STACKING - A stacked microelectronic assembly includes a first stacked subassembly and a second stacked subassembly overlying a portion of the first stacked subassembly. Each stacked subassembly includes at least a respective first microelectronic element having a face and a respective second microelectronic element having a face overlying and parallel to a face of the first microelectronic element. Each of the first and second microelectronic elements has edges extending away from the respective face. A plurality of traces at the respective face extend about at least one respective edge. Each of the first and second stacked subassemblies includes contacts connected to at least some of the plurality of traces. Bond wires conductively connect the contacts of the first stacked subassembly with the contacts of the second stacked subassembly. | 08-04-2011 |
20110165733 | MICROELECTRONIC PACKAGES AND METHODS THEREFOR - A method of making a microelectronic assembly can include molding a dielectric material around at least two conductive elements which project above a height of a substrate having a microelectronic element mounted thereon, so that remote surfaces of the conductive elements remain accessible and exposed within openings extending from an exterior surface of the molded dielectric material. The remote surfaces can be disposed at heights from said surface of said substrate which are lower or higher than a height of the exterior surface of the molded dielectric material from the substrate surface. The conductive elements can be arranged to simultaneously carry first and second different electric potentials: e.g., power, ground or signal potentials. | 07-07-2011 |
20110139408 | COLLECTOR-RADIATOR STRUCTURE FOR AN ELECTROHYDRODYNAMIC COOLING SYSTEM - An electrohydrodynamic fluid accelerator includes an emitter electrode and leading surfaces of a collector electrode that are substantially exposed to ion bombardment. Heat transfer surfaces downstream of the emitter electrode along a fluid flow path include a first portion not substantially exposed to the ion bombardment that is conditioned with a first ozone reducing material. The leading surfaces of the collector electrode are not conditioned with the first ozone reducing material, but may include a different surface conditioning. The downstream heat transfer surfaces and the leading surfaces can be separately formed and joined to form the unitary structure or can be integrally formed. The electrohydrodynamic fluid accelerator can be used in a thermal management assembly of an electronic device with a heat dissipating device thermally coupled to the conditioned heat transfer surfaces. | 06-16-2011 |
20110095441 | MICROELECTRONIC ASSEMBLIES HAVING COMPLIANT LAYERS - A compliant semiconductor chip package assembly includes a semiconductor chip having a plurality of chip contacts, and a compliant layer having a top surface, a bottom surface and sloping peripheral edges, whereby the bottom surface of the compliant layer overlies a surface of the semiconductor chip. The assembly also includes a plurality of electrically conductive traces connected to the chip contacts of the semiconductor chip, the traces extending along the sloping edges to the top surface of the compliant layer. The assembly may include conductive terminals overlying the semiconductor chip, with the compliant layer supporting the conductive terminals over the semiconductor chip. The conductive traces have first ends electrically connected with the contacts of the semiconductor chip and second ends electrically connected with the conductive terminals. The conductive terminals are movable relative to the semiconductor chip. | 04-28-2011 |
20110074027 | FLIP CHIP INTERCONNECTION WITH DOUBLE POST - A microelectronic assembly includes a substrate having a first surface, a plurality of first conductive pads exposed thereon, and a plurality of first metal posts. Each metal post defines a base having an outer periphery and is connected to one of the conductive pads. Each metal post extends along a side wall from the base to ends remote from the conductive pad. The assembly further includes a dielectric material layer having a plurality of openings and extending along the first surface of the substrate. The first metal posts project through the openings such that the dielectric material layer contacts at least the outside peripheries thereof. Fusible metal masses contact the ends of some of first metal posts and extend along side walls towards the outer surface of the dielectric material layer. A microelectronic element is carried on the substrate and is electronically can be connected the conductive pads. | 03-31-2011 |
20110049696 | OFF-CHIP VIAS IN STACKED CHIPS - A microelectronic assembly includes first and second stacked microelectronic elements, each having spaced apart traces extending along a front face and beyond at least a first edge thereof. An insulating region can contact the edges of each microelectronic element and at least portions of the traces of each microelectronic element extending beyond the respective first edges. The insulating region can define first and second side surfaces adjacent the first and second edges of the microelectronic elements. A plurality of spaced apart openings can extend along a side surface of the microelectronic assembly. Electrical conductors connected with respective traces can have portions disposed in respective openings and extending along the respective openings. The electrical conductors may extend to pads or solder balls overlying a face of one of the microelectronic elements. | 03-03-2011 |
20110042810 | STACKED PACKAGING IMPROVEMENTS - A plurality of microelectronic assemblies are made by severing an in-process unit including an upper substrate and lower substrate with microelectronic elements disposed between the substrates. In a further embodiment, a lead frame is joined to a substrate so that the leads project from this substrate. Lead frame is joined to a further substrate with one or more microelectronic elements disposed between the substrates. | 02-24-2011 |
20110033979 | EDGE CONNECT WAFER LEVEL STACKING - A method of making a stacked microelectronic package by forming a microelectronic assembly by stacking a first subassembly including a plurality of microelectronic elements onto a second subassembly including a plurality of microelectronic elements, at least some of the plurality of microelectronic elements of said first subassembly and said second subassembly having traces that extend to respective edges of the microelectronic elements, then forming notches in the microelectronic assembly so as to expose the traces of at least some of the plurality of microelectronic elements, then forming leads at the side walls of the notches, the leads being in electrical communication with at least some of the traces and dicing the assembly into packages. Additional embodiments include methods for creating stacked packages using substrates and having additional traces that extend to both the top and bottom of the package. | 02-10-2011 |
20110031629 | EDGE CONNECT WAFER LEVEL STACKING - In accordance with an aspect of the invention, a stacked microelectronic package is provided which may include a plurality of subassemblies, e.g., a first subassembly and a second subassembly underlying the first subassembly. A front face of the second subassembly may confront the rear face of the first subassembly. Each of the first and second subassemblies may include a plurality of front contacts exposed at the front face, at least one edge and a plurality of front traces extending about the respective at least one edge. The second subassembly may have a plurality of rear contacts exposed at the rear face. The second subassembly may also have a plurality of rear traces extending from the rear contacts about the at least one edge. The rear traces may extend to at least some of the plurality of front contacts of at least one of the first or second subassemblies. | 02-10-2011 |
20110017704 | METHOD OF ELECTRICALLY CONNECTING A MICROELECTRONIC COMPONENT - A method of making a microelectronic connection component is disclosed. A plurality of portions of a conductive, etch-resistant material is provided on a surface of a metallic sheet. The sheet is etched from the surface to form posts extending generally parallel to one another aligned with the portions of the etch-resistant material. A microelectronic device is provided having one of a front face or a rear face overlying first ends of the posts. Second ends of the posts remote from the first ends face away from the microelectronic device as interconnection terminals for the connection component. At least some of the posts are electrically connected to the microelectronic device. | 01-27-2011 |
20110012259 | PACKAGED SEMICONDUCTOR CHIPS - A chip-sized wafer level packaged device including a portion of a semiconductor wafer including a device, a packaging layer formed over the portion of the semiconductor wafer, the packaging layer including a material having thermal expansion characteristics similar to those of the semiconductor wafer and a ball grid array formed over a surface of the packaging layer and being electrically connected to the device. | 01-20-2011 |
20110006432 | RECONSTITUTED WAFER STACK PACKAGING WITH AFTER-APPLIED PAD EXTENSIONS - A stacked microelectronic unit is provided which can include a plurality of vertically stacked microelectronic elements ( | 01-13-2011 |
20100273293 | SUBSTRATE FOR A MICROELECTRONIC PACKAGE AND METHOD OF FABRICATING THEREOF - Substrates having molded dielectric layers and methods of fabricating such substrates are disclosed. The substrates may advantageously be used in microelectronic assemblies having high routing density. | 10-28-2010 |
20100270679 | MICROELECTRONIC PACKAGES FABRICATED AT THE WAFER LEVEL AND METHODS THEREFOR - A method of making microelectronic packages includes making a subassembly by providing a plate having a top surface, a bottom surface and openings extending between the top and bottom surfaces, attaching a compliant layer to the top surface of the plate, the compliant layer having openings that are aligned with the openings extending through the plate, and providing electrically conductive features on the compliant layer. After making the subassembly, the bottom surface of the plate is attached with the top surface of a semiconductor wafer so that the openings extending through the plate are aligned with contacts on the wafer. At least some of the electrically conductive features on the compliant layer are electrically interconnected with the contacts on the semiconductor wafer. | 10-28-2010 |
20100258956 | MICROELECTRONIC PACKAGES AND METHODS THEREFOR - A microelectronic package includes a microelectronic element having faces and contacts, the microelectronic element having an outer perimeter, and a substrate overlying and spaced from a first face of the microelectronic element, whereby an outer region of the substrate extends beyond the outer perimeter of the microelectronic element. The microelectronic package includes a plurality of etched conductive posts exposed at a surface of the substrate and being electrically interconnected with the microelectronic element, whereby at least one of the etched conductive posts is disposed in the outer region of the substrate. The package includes an encapsulating mold material in contact with the microelectronic element and overlying the outer region of the substrate, the encapsulating mold material extending outside of the etched conductive posts for defining an outermost edge of the microelectronic package. | 10-14-2010 |
20100242269 | COMPACT LENS TURRET ASSEMBLY - An electronic camera module incorporates a sensor unit ( | 09-30-2010 |
20100232129 | MICROELECTRONIC PACKAGES AND METHODS THEREFOR - A method of making a microelectronic assembly includes providing a microelectronic package having a substrate, a microelectronic element overlying the substrate and at least two conductive elements projecting from a surface of the substrate, the at least two conductive elements having surfaces remote from the surface of the substrate. The method includes compressing the at least two conductive elements so that the remote surfaces thereof lie in a common plane, and after the compressing step, providing an encapsulant material around the at least two conductive elements for supporting the microelectronic package and so that the remote surfaces of the at least two conductive elements remain accessible at an exterior surface of the encapsulant material. | 09-16-2010 |
20100230812 | Microelectronic Assemblies Having Compliancy and Methods Therefor - A microelectronic assembly is disclosed that includes a semiconductor wafer with contacts, compliant bumps of dielectric material overlying the first surface of the semiconductor wafer, and a dielectric layer overlying the first surface of the semiconductor wafer and edges of the compliant bumps. The compliant bumps have planar top surfaces which are accessible through the dielectric layer. Conductive traces may be electrically connected with contacts and extend therefrom to overlie the planar top surfaces of the compliant bumps. Conductive elements may overlie the planar top surfaces in contact with the conductive traces. | 09-16-2010 |
20100225006 | CHIPS HAVING REAR CONTACTS CONNECTED BY THROUGH VIAS TO FRONT CONTACTS - A microelectronic unit is provided in which front and rear surfaces of a semiconductor element may define a thin region which has a first thickness and a thicker region having a thickness at least about twice the first thickness. A semiconductor device may be present at the front surface, with a plurality of first conductive contacts at the front surface connected to the device. A plurality of conductive vias may extend from the rear surface through the thin region of the semiconductor element to the first conductive contacts. A plurality of second conductive contacts can be exposed at an exterior of the semiconductor element. A plurality of conductive traces may connect the second conductive contacts to the conductive vias. | 09-09-2010 |
20100197081 | MICROELECTRONIC PACKAGE WITH THERMAL ACCESS - A method of forming a microelectronic package including the steps of providing a three-layer metal plate, having a first layer, a second layer and a third layer. A plurality of conductive elements is formed from the first layer of the metal plate. A dielectric sheet is attached to the first layer of the metal plate, such that the dielectric sheet is remote from the third layer. A plurality of conductive features is then formed from the third layer of the metal plate which are also remote from the dielectric sheet. A microelectronic element is next electrically conducted to the conductive elements and a heat spreader is thermally connected the microelectronic element. | 08-05-2010 |
20100193970 | MICRO PIN GRID ARRAY WITH PIN MOTION ISOLATION - A microelectronic package includes a microelectronic element having faces and contacts, a flexible substrate overlying and spaced from a first face of the microelectronic element, and a plurality of conductive terminals exposed at a surface of the flexible substrate. The conductive terminals are electrically interconnected with the microelectronic element and the flexible substrate includes a gap extending at least partially around at least one of the conductive terminals. In certain embodiments, the package includes a support layer, such as a compliant layer, disposed between the first face of the microelectronic element and the flexible substrate. In other embodiments, the support layer includes at least one opening that is at least partially aligned with one of the conductive terminals. | 08-05-2010 |
20100162894 | ELECTRO-KINETIC AIR MOVER WITH UPSTREAM FOCUS ELECTRODE SURFACES - An electro-kinetic air mover for creating an airflow using no moving parts. The electro-kinetic air mover includes an ion generator that has an electrode assembly including a first array of emitter electrodes, a second array of collector electrodes, and a high voltage generator. Preferably, a third or leading or focus electrode is located upstream of the first array of emitter electrodes, and/or a trailing electrode is located downstream of the second array of collector electrodes. The device can also include an interstitial electrode located between collector electrodes, an enhanced collector electrode with an integrally formed trailing end, and an enhanced emitter electrode with an enhanced length in order to increase emissivity. | 07-01-2010 |
20100155025 | COLLECTOR ELECTRODES AND ION COLLECTING SURFACES FOR ELECTROHYDRODYNAMIC FLUID ACCELERATORS - Embodiments of electrohydrodynamic (EHD) fluid accelerator devices utilize collector electrode structures that promote efficient fluid flow and reduce the probability of arcing by managing the strength of the electric field produced at the forward edges of the collector electrodes. In one application, the EHD devices dissipate heat generated by a thermal source in a thermal management system. | 06-24-2010 |
20100116469 | ELECTROHYDRODYNAMIC FLUID ACCELERATOR WITH HEAT TRANSFER SURFACES OPERABLE AS COLLECTOR ELECTRODE - In thermal management systems that employ EHD devices to motivate flow of air between ventilated boundary portions of an enclosure, it can be desirable to have some heat transfer surfaces participate in electrohydrodynamic acceleration of fluid flow while providing additional heat transfer surfaces that may not. In some embodiments, both collector electrodes and additional heat transfer surfaces are thermally coupled into a heat transfer path. Collector electrodes then contribute both to flow of cooling air and to heat transfer to the air flow so motivated. The collector electrodes and additional heat transfer surfaces may be parts of a unitary, or thermally coupled, structure that is introduced into a flow path at multiple positions therealong. In some embodiments, the collector electrodes and additional heat transfer surfaces may be proximate each other along the flow path. In some embodiments, the collector electrodes and additional heat transfer surfaces may be separate structures. | 05-13-2010 |
20100116464 | REVERSIBLE FLOW ELECTROHYDRODYNAMIC FLUID ACCELERATOR - Reversible flow may be provided in certain EHD device configurations that selectively energize corona discharge electrodes arranged to motivate flows in generally opposing directions. In some embodiments, a first set of one or more corona discharge electrodes is positioned, relative to a first array of collector electrode surfaces, to when energized, motivate flow in a first direction, while second set of one or more corona discharge electrodes is positioned, relative to a second array of collector electrode surfaces, to when energized, motivate flow in a second direction that opposes the first. In some embodiments, the first and second arrays of collector electrode surfaces are opposing surfaces of individual collector electrodes. In some embodiments, the first and second arrays of collector electrode surfaces are opposing surfaces of respective collector electrodes. | 05-13-2010 |
20100116460 | SPATIALLY DISTRIBUTED VENTILATION BOUNDARY USING ELECTROHYDRODYNAMIC FLUID ACCELERATORS - In thermal management systems that employ EHD devices to motivate flow of air through an enclosure, spatial distribution of a ventilation boundary may facilitate reductions in flow resistance by reducing average transit distance for cooling air from an inlet portion of the ventilation boundary to an outlet portion. Some thermal management systems described herein distribute a ventilation boundary over opposing surfaces, adjacent surfaces or even a single surface of an enclosure while providing a short, “U” shaped, “L” shaped or generally straight through flow path. In some cases, spatial distributions of the ventilation boundary facilitate or enable enclosure geometries for which conventional fan or blower ventilation would be impractical. In some cases, provision of multiple portions of the ventilation boundary may allow the thermal management system to tolerate blockage or occlusion of a subset of the inlet and/or outlet portions and, when at least some of such portions are non-contiguous spatially-distributed, tolerance to a single cause of blockage or occlusion is enhanced. | 05-13-2010 |
20100053407 | Wafer level compliant packages for rear-face illuminated solid state image sensors - A solid state image sensor includes a microelectronic element having a front face and a rear face remote from the front face, the rear face having a recess extending towards the front surface. A plurality of light sensing elements may be disposed adjacent to the front face so as to receive light through the part of the rear face within the recess. A solid state image sensor can include a microelectronic element, e.g., a semiconductor chip, having a front face and a rear face remote from the front face, a plurality of light sensing elements disposed adjacent to the front face, the light sensing elements being arranged to receive light through the rear face. A packaging structure, which can include a compliant layer, can be attached to a front surface of the microelectronic element. Electrically conductive package contacts may directly overlie the light sensing elements and the front face and be connected to chip contacts at the front face through openings in an insulating packaging layer overlying the front face. | 03-04-2010 |
20100052540 | ELECTROHYDRODYNAMIC FLUID ACCELERATOR DEVICE WITH COLLECTOR ELECTRODE EXHIBITING CURVED LEADING EDGE PROFILE - Performance of an electrohydrodynamic fluid accelerator device may be improved and adverse events such as sparking or arcing may be reduced based, amongst other things, on electrode geometries and/or positional interrelationships of the electrodes. For example, in a class of EHD devices that employ a longitudinally elongated corona discharge electrode (often, but not necessarily, a wire), a plurality of generally planar, collector electrodes may be positioned so as to present respective leading surfaces toward the corona discharge electrode. The generally planar collector electrodes may be oriented so that their major surfaces are generally orthogonal to the longitudinal extent of the corona discharge electrode. In such EHD devices, a high intensity electric field can be established in the “gap” between the corona discharge electrode and leading surfaces of the collector electrodes. | 03-04-2010 |
20100035382 | Methods of making compliant semiconductor chip packages - A method of making a semiconductor chip package is provided in which a compliant layer is provided over a contact bearing face of a semiconductor chip. The compliant layer can have a bottom surface adjacent to the chip face, a top surface facing away from the bottom surface, and at least one sloping surface between the top and bottom surfaces. The compliant layer can be disposed remote in a lateral direction along the contact bearing face from at least one contact adjacent to the sloping surface. Bond ribbons can be formed atop the compliant layer, wherein each bond ribbon electrically connects one of the contacts to an associated conductive terminal at the top surface of the compliant layer. The compliant layer can provide stress relief to the bond ribbons, such as during handling and affixing the assembly to an external substrate. A bond ribbon can include a strip extending along the sloping surface of the compliant layer, the strip having a substantially constant thickness in a direction extending away from the sloping surface. | 02-11-2010 |
20100013108 | STACKED PACKAGES AND MICROELECTRONIC ASSEMBLIES INCORPORATING THE SAME - A microelectronic assembly includes units superposed on one another to form at least one stack having a vertical direction. Each unit includes one or more microelectronic devices and has top and bottom surfaces. Top unit terminals are exposed at the top surfaces and bottom unit terminals are exposed at the bottom surfaces. The top and bottom unit terminals are provided at a set of ordered column positions. Each top unit terminal of the set, except the top unit terminals at the highest ordered column position, is connected to a respective bottom unit terminal of the same unit at a next higher ordered column position. Each bottom unit terminal of the set, except the bottom unit terminals of the lowest unit in the stack, is connected to a respective upper unit terminal of the next lower unit in the stack at the same column position. | 01-21-2010 |
20100009554 | Microelectronic interconnect element with decreased conductor spacing - A microelectronic interconnect element can include a plurality of first metal lines and a plurality of second metal lines interleaved with the first metal lines. Each of the first and second metal lines has a surface extending within the same reference plane. The first metal lines have surfaces above the reference plane and remote therefrom and the second metal lines have surfaces below the reference plane and remote therefrom. A dielectric layer can separate a metal line of the first metal lines from an adjacent metal line of the second metal lines. | 01-14-2010 |
20090321056 | MULTI-STAGE ELECTROHYDRODYNAMIC FLUID ACCELERATOR APPARATUS - Multi-stage electrohydrodynamic (MHD) fluid flow acceleration is described. In some embodiments, an EHD fluid accelerator apparatus includes a substrate for thermal conduction and a plurality of electrode structures for thermal conduction therethrough, wherein each electrode structure has a collector electrode portion and a corona discharge electrode portion. | 12-31-2009 |
20090236406 | Method of electrically connecting a microelectronic component - A method of treating a component can include providing a component including a plurality of metallic posts extending generally parallel to one another. The providing step can be performed so that the posts have solder on the tips of the posts but not covering other portions of the posts. The method can include reflowing the solder provided on the posts so that the solder coats the posts. The providing step may be performed so that, prior to the reflowing step, the solder covers only the tips of the posts. The providing step can include depositing portions of the solder on a surface of a metallic sheet and etching the sheet from the surface. The plurality of posts may comprise elongated posts. | 09-24-2009 |
20090212381 | WAFER LEVEL PACKAGES FOR REAR-FACE ILLUMINATED SOLID STATE IMAGE SENSORS - A solid state image sensor includes a microelectronic element having a front face and a rear face remote from the front face, the rear face having a recess extending towards the front surface. A plurality of light sensing elements may be disposed adjacent to the front face so as to receive light through the part of the rear face within the recess. A solid state image sensor can include a microelectronic element having a front face and a rear face remote from the front face, a plurality of light sensing elements disposed adjacent to the front face, the light sensing elements being arranged to receive light through the rear face. Electrically conductive package contacts may directly overlie the light sensing elements and the front face and be connected to chip contacts at the front face through openings in an insulating packaging layer overlying the front face. | 08-27-2009 |
20090200655 | Method of electrically connecting a microelectronic component - A microelectronic unit can include a support structure including a dielectric having oppositely-directed first and second surfaces. A plurality of substantially rigid posts can protrude parallel to one another in a direction beyond the first surface of the support structure. Each post may have a top surface remote from the support structure, and the top surfaces can be substantially coplanar with one another. A microelectronic device having a surface with bond pads can overlie the second surface of the support structure with the bond pad-bearing surface of the microelectronic device facing toward the support structure. Connections can electrically connect the posts with the bond pads. | 08-13-2009 |
20090200654 | Method of electrically connecting a microelectronic component - A microelectronic assembly is provided which can include an element including a first dielectric layer and a second dielectric layer overlying the first dielectric layer, the second dielectric layer having an exposed surface defining an exposed major surface of the element. A plurality of substantially rigid metal posts can project beyond the exposed surface, the metal posts having ends remote from the exposed surface. The microelectronic assembly can include a microelectronic device which has bond pads and overlies the element. The microelectronic device can have a major surface which confronts the posts. Connections electrically connect the ends of the metal posts with the bond pads of the microelectronic device. | 08-13-2009 |
20090162975 | Method of forming a wafer level package - A method is provided for forming a microelectronic package at a wafer level. Such method can include providing a semiconductor wafer having a surface with a pattern of electrical contacts thereon. An interposer component can be provided which has a compliant dielectric layer bonded to a conductive layer. A pattern of holes can be formed through the compliant dielectric layer and the conductive layer which corresponds to the pattern of electrical contacts. The compliant dielectric layer can be contacted with the semiconductor wafer surface so that the pattern of holes is in an aligned position with the pattern of contacts and the compliant dielectric layer and the semiconductor wafer surface then bonded in the aligned position to unite the semiconductor wafer and the interposer component to form a wafer level semiconductor package. The wafer level semiconductor package can be diced to form individual semiconductor chip packages. | 06-25-2009 |
20090160065 | Reconstituted Wafer Level Stacking - A stacked microelectronic assembly is fabricated from a structure which includes a plurality of first microelectronic elements having front faces bonded to a carrier. Each first microelectronic element may have a first edge and a plurality of first traces extending along the front face towards the first edge. After exposing at least a portion of the first traces, a dielectric layer is formed over the plurality of first microelectronic elements. After thinning the dielectric layer, a plurality of second microelectronic elements are aligned and joined with the structure such that front faces of the second microelectronic elements are facing the rear faces of the plurality of first microelectronic elements. Processing is repeated to form the desirable number of layers of microelectronic elements. In one embodiment, the stacked layers of microelectronic elements may be notched at dicing lines to expose edges of traces, which may then be electrically connected to leads formed in the notches. Individual stacked microelectronic units may be separated from the stacked microelectronic assembly by any suitable dicing, sawing or breaking technique. | 06-25-2009 |
20090148594 | Interconnection element with plated posts formed on mandrel - An interconnection element can be formed by plating a metal layer within holes in an essentially non-metallic layer of a mandrel, wherein posts can be plated onto a metal layer exposed within the holes, e.g., a metal layer covering the holes in the non-metallic layer. The tips of the posts can be formed adjacent to ends or bottoms of the blind holes. Terminals can be formed in conductive communication with the conductive posts. The terminals can be connected through a dielectric layer to the conductive posts. At least a portion of the mandrel can then be removed from at least ends of the holes. In this way, the tips of the conductive posts can become raised above a major surface of the interconnection element such that at least the tips of the posts project beyond the major surface. | 06-11-2009 |
20090146303 | Flip Chip Interconnection with double post - A packaged microelectronic assembly includes a microelectronic element having a front surface and a plurality of first solid metal posts extending away from the front surface. Each of the first posts has a width in a direction of the front surface and a height extending from the front surface, wherein the height is at least half of the width. There is also a substrate having a top surface and a plurality of second solid metal posts extending from the top surface and joined to the first solid metal posts. | 06-11-2009 |
20090145645 | Interconnection element with posts formed by plating - An interconnection element is provided for conductive interconnection with another element having at least one of microelectronic devices or wiring thereon. The interconnection element includes a dielectric element having a major surface. A plated metal layer including a plurality of exposed metal posts can project outwardly beyond the major surface of the dielectric element. Some of the metal posts can be electrically insulated from each other by the dielectric element. The interconnection element typically includes a plurality of terminals in conductive communication with the metal posts. The terminals can be connected through the dielectric element to the metal posts. The posts may be defined by plating a metal onto exposed co-planar surfaces of a mandrel and interior surfaces of openings in a mandrel, after which the mandrel can be removed. | 06-11-2009 |
20090133254 | Components with posts and pads - A packaged microelectronic element includes connection component incorporating a dielectric layer ( | 05-28-2009 |
20090115047 | Robust multi-layer wiring elements and assemblies with embedded microelectronic elements - An interconnect element | 05-07-2009 |
20090104736 | Stacked Packaging Improvements - A plurality of microelectronic assemblies ( | 04-23-2009 |
20090071707 | Multilayer substrate with interconnection vias and method of manufacturing the same - A method is provided for manufacturing a multilayer substrate. An insulating layer can have a hole overlying a patterned second metal layer. In turn, the second metal layer can overlie a first metal layer. A third metal layer can be electroplated onto the patterned second metal layer within the hole, the third metal layer extending from the second metal layer onto a wall of the hole. When plating the third metal layer, the first and second metal layers can function as a conductive commoning element. | 03-19-2009 |
20090071000 | Formation of circuitry with modification of feature height - A connection component for mounting a chip or other microelectronic element is formed from a starting unit including posts projecting from a dielectric element by crushing or otherwise reducing the height of at least some of the posts. | 03-19-2009 |
20090065907 | Semiconductor packaging process using through silicon vias - A microelectronic unit | 03-12-2009 |
20090045524 | Microelectronic package - A microelectronic package includes a lower unit having a lower unit substrate with conductive features and a top and bottom surface. The lower unit includes one or more lower unit chips overly/ing the top surface of the lower unit substrate that are electrically connected to the conductive features of the lower unit substrate. The microelectronic package also includes an upper unit including an upper unit substrate having conductive features, top and bottom surfaces and a hole extending between such top and bottom surfaces. The upper unit further includes one or more upper unit chips overlying the top surface of the upper unit substrate and electrically connected to the conductive features of the upper unit substrate by connections extending within the hole. The upper unit may include an upper unit encapsulant that covers the connections of the upper unit and the one or more upper unit chips. | 02-19-2009 |
20090039528 | Wafer level stacked packages with individual chip selection - A method is provided for fabricating a stacked microelectronic assembly by steps including stacking and joining first and second like microelectronic substrates, each including a plurality of like microelectronic elements attached together at dicing lanes. Each microelectronic element has boundaries defined by edges including a first edge and a second edge. The first and second microelectronic substrates can be joined in different orientations, such that first edges of microelectronic elements of the first microelectronic substrate are aligned with second edges of microelectronic elements of the second microelectronic substrate. After exposing traces at the first and second edges of the microelectronic elements of the stacked microelectronic substrates, first and second leads can be formed which are connected to the exposed traces of the first and second microelectronic substrates, respectively. The second leads can be electrically isolated from the first leads. | 02-12-2009 |
20090032913 | Component and assemblies with ends offset downwardly - A stackable microelectronic component includes a dielectric layer having an attachment portion. The dielectric layer has a first side, a second side, and outer ends lying outwardly of the attachment portion. The outer ends are offset from the attachment portion. A semiconductor chip is assembled to the second side of the dielectric layer at the attachment portion. First terminal structures are carried by the outer ends of the dielectric layer for connecting the semiconductor chip with external circuitry located above the first side of the dielectric layer. Second terminal structures are carried by the outer ends of the dielectric layer for connecting the semiconductor chip with external circuitry located below the second side of the dielectric layer. | 02-05-2009 |
20090023249 | Wire bonded wafer level cavity package - A microelectronic device includes a chip having a front surface and a rear surface, the front surface having an active region and a plurality of contacts exposed at the front surface outside of the active region. The device further includes a lid overlying the front surface. The lid has edges bounding the lid, at least one of the edges including one or more outer portions and one or more recesses extending laterally inwardly from the outer portions, with the contacts being aligned with the recesses and exposed through them. | 01-22-2009 |
20090014861 | Microelectronic package element and method of fabricating thereof - Microelectronic package elements and packages having dielectric layers and methods of fabricating such elements packages are disclosed. The elements and packages may advantageously be used in microelectronic assemblies having high routing density. | 01-15-2009 |
20090008795 | Stackable microelectronic device carriers, stacked device carriers and methods of making the same - A method of manufacturing a microelectronic package. The method includes the steps of attaching at least one microelectronic element to a tape having upper terminals projecting upwardly from an upper surface of a dielectric layer, so that top surfaces of the terminals are disposed coplanar with or above a top surface of the microelectronic element after the attaching step, electrically connecting the microelectronic element to at least some of the upper terminals; and further includes the step of applying an encapsulant to cover at least a portion of the upper surface of the dielectric layer, leaving the upper terminals surfaces of the terminals exposed. | 01-08-2009 |
20090002964 | Multilayer wiring element having pin interface - A method of forming contacts for an interconnection element, includes (a) joining a conductive element to an interconnection element having multiple wiring layers, (b) patterning the conductive element to form conductive pins, and (c) electrically interconnecting the conductive pins with conductive features of the interconnection element. A multiple wiring layer interconnection element having an exposed pin interface, includes an interconnection element having multiple wiring layers separated by at least one dielectric layer, the wiring layers including a plurality of conductive features exposed at a first face of the interconnection element, a plurality of conductive pins protruding in a direction away from the first face, and metal features electrically interconnecting the conductive features with the conductive pins. | 01-01-2009 |
20080315977 | Low loss RF transmission lines - A transmission structure having high propagation velocity and a low effective dielectric loss. The structure comprises a dielectric, a first reference conductor disposed below the dielectric, a signal conductor disposed above the dielectric, and a second reference conductor disposed over the signal conductor. The second reference conductor has a recess portion facing the signal conductor, the recess portion defining a gap between the second reference conductor and the signal conductor. The gap may be filled with air which has a relative dielectric constant approximately equal to one (1). Because of the physical and dielectric constant characteristics of the gap, the structure concentrates an electric field in the gap resulting in an effective dielectric constant approximately (approaching) one (1) and an effective dielectric loss approximately equal to zero (0). Thus, the structure exhibits a propagation velocity approximately equal to the speed of light. | 12-25-2008 |
20080303132 | Semiconductor chip packages having cavities - Packaged microelectronic elements are provided which include a dielectric element, a cavity, a plurality of chip contacts and a plurality of package contacts, and microelectronic elements having a plurality of bond pads connected to the chip contacts. | 12-11-2008 |
20080296749 | Package stacking through rotation - A packaged microelectronic element includes a package element that further includes a dielectric element having a bottom face and a top face, first and second bond windows extending between the top and bottom faces, a plurality of chip contacts disposed at the top face adjacent to the first and second bond windows, and first and second sets of package contacts exposed at diagonally opposite corner regions of the top face, wherein the first and second sets conductively connected to the chip contacts. There is also a microelectronic element adjacent to the bottom face of the dielectric element, as well as bond wires extending through the first and second bond windows to conductively connect the microelectronic element to the chip contacts. | 12-04-2008 |
20080296748 | Transmission line stacking - A microelectronic unit has a structure including a microelectronic element such as a semiconductor chip with a first contact disposed remote from the periphery of the structure. The unit further includes first and second redistribution conductive pads disposed near a periphery of the structure and a conductive path incorporating first and second conductors extending toward the first contact, these conductors being connected to one another adjacent the first contact. The conductive path is connected to the first contact, and can provide signal routing from the periphery of the unit to the contact without the need for long stubs. A package may include a plurality of such units, which may be stacked on one another with the redistribution conductive pads of the various units connected to one another. | 12-04-2008 |
20080296717 | Packages and assemblies including lidded chips - A lidded chip is provided which includes a chip having a major surface and a plurality of first chip contacts exposed at the major surface. A lid overlies the major surface. A chip carrier is disposed between the chip and the lid, the chip carrier having an inner surface confronting the major surface and an outer surface confronting the lid. A plurality of first carrier contacts of the chip carrier are conductively connected to the first chip contacts. A plurality of second carrier contacts extend upwardly at least partially through the openings in the lid. | 12-04-2008 |
20080296709 | Chip assembly - The present invention provides an integrated circuit chip assembly and a method of manufacturing the same. The assembly includes a package element having a top surface and an integrated circuit chip having a top surface, a bottom surface, edge surface between the top and bottom surfaces, and contacts exposed at the top surface. The package element is disposed below the chip with the top surface of the package element facing toward the bottom surface of the chip. At least one spacer element resides between the top surface of the package element and the bottom surface of the chip. According to one embodiment, the at least one spacer element may form a substantially closed cavity between the package element and the integrated circuit chip. According to another embodiment, first conductive features may extend from the contacts of the chip along the top surface, and at least some of said first conductive features extend along at least one of the edge surfaces of the chip. | 12-04-2008 |
20080277775 | Ultra-thin near-hermetic package based on rainier - A microelectronic package including a dielectric layer having top and bottom surfaces, the dielectric layer having terminals exposed at the bottom surface; a metallic wall bonded to the dielectric layer and projecting upwardly from the top surface of the dielectric layer and surrounding a region of the top surface; a metallic lid bonded to the wall and extending over the region of the top surface so that the lid, the wall and the dielectric layer cooperatively define an enclosed space; and a microelectronic element disposed within the space and electrically connected to the terminals. | 11-13-2008 |
20080254825 | Wearable ultra-thin miniaturized mobile communications - A cellular telephone is provided with a wearable housing, desirably in a form which can be concealed in the user's clothing, wallet, or other place. The housing may be devoid of switches or buttons for controlling the cellular telephone, and control inputs can be provided through free space communications such as a short-range radio link. A module for use in portable communications devices includes chips superposed on one another on a stack, and incorporates an interposer for facilitating connections between the chips. | 10-16-2008 |
20080246136 | Chips having rear contacts connected by through vias to front contacts - A microelectronic unit is provided in which front and rear surfaces of a semiconductor element may define a thin region which has a first thickness and a thicker region having a thickness at least about twice the first thickness. A semiconductor device may be present at the front surface, with a plurality of first conductive contacts at the front surface connected to the device. A plurality of conductive vias may extend from the rear surface through the thin region of the semiconductor element to the first conductive contacts. A plurality of second conductive contacts can be exposed at an exterior of the semiconductor element. A plurality of conductive traces may connect the second conductive contacts to the conductive vias. | 10-09-2008 |
20080217144 | Impact sensing switch - An impact switch includes a housing having a wall including at least two electrically conductive contact elements spaced apart from one another. The switch includes an inertial body having a conductive surface disposed in a tapered aperture and electrically connecting the contact elements to one another in a switch closed condition. An impact switch for rapidly firing an explosive device is provided. | 09-11-2008 |