Stanley Electric Co., Ltd. Patent applications |
Patent application number | Title | Published |
20160119601 | VIDEO PROJECTION SYSTEM INCLUDING MULTIPLE LOCAL VIDEO PROJECTION UNITS - A video projection system includes: at least first and second local video projection units, and a video signal distributing unit adapted to distribute first and second luminance signals to the first and second local video projection units, respectively. The first local video projection unit projects a first view field along with a first maximum luminance, and the second local video projection unit projects a second view field larger than the first view field along with a second maximum luminance smaller than the first maximum luminance. A luminance resolution of the first luminance distribution is equal to a luminance resolution of the second luminance distribution. | 04-28-2016 |
20160119596 | VIDEO PROJECTION APPARATUS CAPABLE OF OPERATING AT OPTIMUM RESONANT FREQUENCY AND ITS CONTROLLING METHOD - A video projection apparatus includes: a light source; an optical deflector having a mirror for reflecting light to project a view field, an actuator for rocking the mirror with an axis of the mirror and a sensor provided in the vicinity of the actuator; and a control unit. The control unit generates a sine-wave voltage applied to the actuator and a cosine-wave voltage; calculates a first convolution between the sine-wave voltage and a sense voltage from the sensor; calculates a second convolution between the cosine-wave voltage and the sense voltage; converts an orthogonal coordinate formed by the first convolution and the second convolution into a polar coordinate formed by a radius component and an angle component; and sweeps the frequency of the first and second voltages so that the frequency is defined as a resonant frequency when the radius component is maximum. | 04-28-2016 |
20160118547 | LIGHT-EMITTING DEVICE AND METHOD OF PRODUCING THE SAME - A light-emitting device of the present invention includes a plurality of first mounting bonding layers that are formed of a metal on a mounting substrate and disposed separately from each other in an island shape, and a plurality of light-emitting elements that are provided on the first mounting bonding layers, respectively. Each of the light-emitting elements includes a columnar support that is mounted on the first mounting bonding layer, and a light-emitting unit that is located on the top face of the support. Each of the supports has a protrusion at a portion closer to the top face on a side face of the support. | 04-28-2016 |
20160118537 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT - A semiconductor light-emitting element comprises: a first semiconductor layer, an active layer having a multiple quantum well structure in which a plurality of well layers and a plurality of barrier layers are alternately layered, an electron block layer, and a second semiconductor layer. Among the barrier layers, an endmost barrier layer closest to the second semiconductor layer includes a first endmost barrier layer part and a second endmost barrier layer part formed on a side closer to the second semiconductor layer than the first endmost barrier layer part and having a larger band gap than that of the first endmost barrier layer part. The first endmost barrier layer part has a band gap that is larger than that of each of the well layers and is smaller than that of each barrier layer other than the endmost barrier layer. | 04-28-2016 |
20160116732 | PIEZOELECTRIC AND ELECTROMAGNETIC TYPE TWO-DIMENSIONAL OPTICAL DEFLECTOR AND ITS MANUFACTURING METHOD - In a two-dimensional optical deflector including: a mirror; two first torsion bars coupled to the mirror along a first axis; an inner frame surrounding the mirror; two piezoelectric actuators each coupled between the first torsion bars and supported by the inner frame; an outer frame surrounding the inner frame; and two second torsion bars coupled between the inner frame and the outer frame along a second axis; a first permanent magnet layer formed on at least a part of a rear-side surface of the inner frame. A base supports the outer frame. A coil is formed at the base. A magnetic flux generated from the coil interacts with a magnetic flux of the first permanent magnetic layer. | 04-28-2016 |
20160087149 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - A semiconductor light-emitting device includes a semiconductor laminate containing an n-type layer, a light-emitting layer, and a p-type layer, via holes penetrating the p-type and the light-emitting layers exposing the n-type layer, a p-side electrode extending on the p-type layer and having light reflectivity, which is separated from each of the boundary edges of the p-type layer and the plurality of via holes, an insulating layer which covers via hole side surfaces and extends on the p-type layer, and which extends on the boundary edge portion of the p-side electrode, and n-side electrodes which are electrically connected to the n-type layer at the bottoms of the via holes, which are led above the p-type layer and the p-side electrode with the insulating layer intervening therebetween, which overlap the p-side electrode without gaps, in a plan view, and which have light reflectivity. | 03-24-2016 |
20160087147 | SEMICONDUCTOR LIGHT EMITTING ELEMENT - A semiconductor light emitting element includes: a pit formation layer having a pyramidal pit caused by a threading dislocation generated in the first semiconductor layer; an active layer; and an electron blocking layer formed on the active layer to cover the recess portion. The active layer is formed on the pit formation layer and having an embedded portion formed so as to embed the pit and a recess portion formed on a surface of the embedded portion to correspond to the pit. The recess portion of the active layer has an apex formed at a position existing in a layered direction of the active layer within the active layer. | 03-24-2016 |
20160087146 | SEMICONDUCTOR LIGHT EMITTING ELEMENT - A semiconductor light emitting element includes: a pit formation layer formed on a first semiconductor layer and having a pyramidal pit; an active layer formed on the pit formation layer and having an embedded portion formed so as to embed the pit. The active layer has a multi-quantum well structure having at least one pair of well layer and barrier layer laminated alternately. The embedded portion has at least one embedded well portion corresponding to the well layer respectively and at least one embedded barrier portion corresponding to the barrier layer respectively. Each of the embedded well portion and the embedded barrier portion is configured such that a second apex angle of the embedded well portion is smaller than a first apex angle of the embedded barrier portion wherein the embedded well portion is subsequently formed on the embedded barrier portion. | 03-24-2016 |
20160087145 | SEMICONDUCTOR LIGHT EMITTING ELEMENT - A semiconductor light emitting element includes: a pit formation layer formed on the first semiconductor layer and having a pyramidal pit; and an active layer formed on the pit formation layer and having a flat portion and an embedded portion which is formed so as to embed the pit. The active layer has a multi-quantum well structure having a well layer and a barrier layer laminated alternately in which each well layer and each barrier layer lie one upon another. The flat portion has a flat well portion corresponding to the well layer. The embedded portion has an embedded well portion corresponding to the well layer. The embedded well portion has a ring portion which is formed in an interface with the flat well portion so as to surround the threading dislocation. The ring portion has a band gap smaller than that of the flat well portion. | 03-24-2016 |
20160027956 | METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING ELEMENT - Provided are a highly reliable semiconductor light-emitting element having uniform protrusions that are arranged regularly and have the same size and a method of producing the same. The method of producing a semiconductor light-emitting element according to the present invention includes: forming a mask layer having a plurality of openings that are arranged at equal intervals along a crystal axis of a semiconductor structure layer on the surface of the semiconductor structure layer; performing a plasma treatment on the surface of the semiconductor structure layer exposed from the openings in the mask layer; removing the mask layer; and wet-etching the surface of the semiconductor structure layer to form protrusions on the surface of the semiconductor structure layer. | 01-28-2016 |
20150362724 | OPTICAL DEFLECTOR APPARATUS CAPABLE OF INCREASING OFFSET DEFLECTING AMOUNT OF MIRROR - In an optical deflector apparatus including a mirror, an inner frame, an outer frame, an inner piezoelectric actuator adapted to flex the mirror around an axis of the mirror, an outer piezoelectric actuator adapted to flex the mirror around the axis of the mirror, and a driver adapted to generate an offset drive voltage and a rocking drive voltage. The offset drive voltage is applied to a first piezoelectric actuator selected from the inner piezoelectric actuator and the outer piezoelectric actuator. The rocking drive voltage is applied to a second piezoelectric actuator different from the first piezoelectric actuator. | 12-17-2015 |
20150349237 | DRIVER FOR OPTICAL DEFLECTOR USING COMBINED SAW-TOOTH DRIVE VOLTAGE AND METHOD FOR CONTROLLING THE SAME - In a driver for driving an optical deflector including a mirror, a piezoelectric actuator and a piezoelectric sensor adapted to sense vibrations of the piezoelectric actuator, a saw-tooth voltage generating unit; a combined saw-tooth voltage generating unit; and a control unit, the control unit applies a saw-tooth voltage and its inverted voltage to the piezoelectric actuator; performs a low-pass filtering process using a cut-off frequency upon a sense voltage; calculates a half period of fluctuations included in a low-pass-filtered saw-tooth voltage; combines the low-pass-filtered saw-tooth voltage with a delayed low-pass-filtered saw-tooth voltage; and to applies a combined saw-tooth voltage and its inverted voltage to the piezoelectric actuator. | 12-03-2015 |
20150338721 | LIGHTING APPARATUS - A lighting apparatus comprising a light source which emits light with predetermined light distribution in a fixed direction, and an optical element which is arranged in such a manner that at least part of light emitted from the light source inputs to the optical element, and can perform switching to a transmission state in which the light is transmitted, a first reflection state in which the light is reflected in a first direction, and a second reflection state in which the light is reflected in a second direction different from the first direction. | 11-26-2015 |
20150338694 | LIQUID CRYSTAL DISPLAY APPARATUS - There is provided a liquid crystal display apparatus in which a retardation Δnd of a liquid crystal layer is greater than 2 μm. Absorbing axes of the first polarizer and the second polarizer are in parallel to an alignment direction of the liquid crystal molecules on surfaces of the first substrate or the second substrate. A slow axis of the optical film and the absorbing axes of the first polarizer and the second polarizer are in parallel to each other or orthogonal to each other. An in-plane retardation of the optical film is from 300 nm to 430 nm. | 11-26-2015 |
20150338644 | TWO-DIMENSIONAL OPTICAL DEFLECTOR INCLUDING TWO SOI STRUCTURES AND ITS MANUFACTURING METHOD - A two-dimensional optical deflector includes a first SOI structure and a second SOI structure. A height of a monocrystalline silicon support layer of the first SOI structure is smaller than a height of a monocrystalline silicon support layer of the second SOI structure. A mirror includes a monocrystalline silicon active layer of the first SOI structure. An inner frame, an inner piezoelectric actuator and an outer frame include a monocrystalline silicon active layer of the first SOI structure and the monocrystalline silicon active layer of the second SOI structure. An outer piezoelectric actuator includes the monocrystalline silicon active layer of the first SOI structure. | 11-26-2015 |
20150295145 | LIGHT-EMITTING DEVICE AND METHOD OF PRODUCING THE SAME - A light-emitting device can prevent light from leaking through an unwanted area (or an unintended area) and can improve color unevenness and brightness unevenness. A method of producing such a light-emitting device, can include: disposing a plurality of light-emitting elements on a surface of a supporting substrate; forming a reflecting layer on the respective light-emitting elements along peripheries of the light-emitting elements facing an area between the light-emitting elements; forming a wavelength conversion layer so as to embed the plurality of light-emitting elements therein on the supporting substrate; and irradiating the wavelength conversion layer with laser beams to remove the wavelength conversion layer disposed at the area between the light-emitting elements. | 10-15-2015 |
20150295131 | SEMICONDUCTOR OPTICAL DEVICE AND ITS MANUFACTURE - The semiconductor optical device has a chip of semiconductor lamination having a first semiconductor layer of a first conductivity type having a first surface, a second semiconductor layer of a second conductivity type opposite to the first conductivity type having a second surface, and an active layer sandwiched between the first semiconductor layer and the second semiconductor layer, the chip having side surface including a first side surface which is contiguous to the second surface, forms an obtuse angle with the second surface, extends across the second semiconductor layer and the active layer, and enters the first semiconductor layer, and a cracked surface which is contiguous to the first side surface, a first conductivity type side electrode formed on the first surface, and a second conductivity type side electrode formed on the second surface, wherein in-plane size of the semiconductor lamination is 50 μm or less. | 10-15-2015 |
20150287794 | P-TYPE ZnO BASED COMPOUND SEMICONDUCTOR LAYER, A ZnO BASED COMPOUND SEMICONDUCTOR ELEMENT, AND AN N-TYPE ZnO BASED COMPOUND SEMICONDUCTOR LAMINATE STRUCTURE - A p-type ZnO based compound semiconductor single crystal layer, wherein the layer includes a p-type ZnO based compound semiconductor single crystal layer co-doped with (i) a Group 11 element which is Cu and/or Ag and (ii) at least one Group 13 element selected from the group consisting of B, Ga, Al, and In, and a concentration of the Group 11 element [11] and a concentration of the Group 13 element [13] fulfill the relation: 0.9≦[11]/[13]<100. | 10-08-2015 |
20150277108 | OPTICAL DEFLECTOR INCLUDING MEANDER-TYPE PIEZOELECTRIC ACTUATORS AND ILL-BALANCED MIRROR STRUCTURE - An optical deflector includes a mirror structure having a symmetrical axis on a plane of the mirror structure, an outer frame surrounding the mirror structure, and at least one meander-type piezoelectric actuator coupled between the mirror structure and the outer frame and having a plurality of piezoelectric cantilevers in parallel with the symmetrical axis folded at folded portions. The mirror structure is divided into a first half portion and a second half portion along the symmetrical axis. The first half portion is close to a closest one of the folded portions, and the second half portion is far from the closest one of the folded portions. A mass of the second half portion is larger than a mass of the first half portion. | 10-01-2015 |
20150277107 | OPTICAL DEFLECTOR INCLUDING INNER FRAME WITH CIRCUMFERENTIAL RIB AND BRANCH RIBS - An optical deflector includes a mirror, an inner frame surrounding the mirror, first and second torsion bars coupled between the mirror and the inner frame, first and second inner piezoelectric actuators coupled between the first and second torsion bars supported by first and second inner coupling portions to the inner frame, and an outer frame surrounding the inner frame. The inner frame is supported by first and second outer coupling portions to the outer frame. A circumferential rib is provided on a rear surface of the inner frame. A first branch rib is provided on a rear surface of the first outer coupling portion, and a second branch rib is provided on a rear surface of the second outer coupling portion. | 10-01-2015 |
20150267889 | LIGHTING FIXTURE - There is provided a lighting fixture including: a light source that emits a light beam; an electrodeposition device that includes multiple pixels of which a transparent state and a mirror state are switchable, independently, and that is disposed such that a normal direction of a pixel surface is not parallel to an optical axis direction of an incident light beam on an optical path of a light beam emitted from the light source; and an optical system that emits, as an illumination beam, both a light beam transmitted through the electrodeposition device and a light beam reflected from the pixel in the mirror state in the electrodeposition device. | 09-24-2015 |
20150263220 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a light-emitting element made of a GaN-based semiconductor with an MOCVD method includes the steps of: growing an n-type semiconductor layer; growing an active layer on the n-type semiconductor layer; and growing a p-type AlGaN-based semiconductor layer on the active layer while maintaining a concavo-convex surface with a depth of 1 to 5 nm. | 09-17-2015 |
20150262978 | SEMICONDUCTOR LIGHT-EMITTING DEVICE HAVING MATRIX-ARRANGED LIGHT-EMITTING ELEMENTS - In a semiconductor light-emitting device including a semiconductor body including light-emitting elements arranged in a matrix, and a support body adapted to support the semiconductor body, the semiconductor body further includes a plurality of optical shield layers each provided at one of a first side face of a first one of the light-emitting elements and a second side face of a second one of the light-emitting elements opposing the first side face of the first light-emitting element. | 09-17-2015 |
20150261049 | LIQUID CRYSTAL DISPLAY APPARATUS - To provide a technique that prevents electrode disconnection in a liquid crystal display apparatus comprising a plurality of openings in an electrode. The apparatus comprises a first substrate, a second substrate, a first electrode, a second electrode, and a liquid crystal layer. The first electrode comprises first openings and the second electrode comprises second openings. Each first opening is disposed forming columns so that the respective longitudinal directions align with a first direction, and comprises two short-side edges that obliquely cross the first direction at an angle other than orthogonal. Each opening is disposed forming columns so that the respective longitudinal directions align with the first direction, and comprises two short-side edges that obliquely cross the first direction at an angle other than orthogonal. The first openings and second openings are alternately disposed column by column along a second direction that crosses the first direction. | 09-17-2015 |
20150206922 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - A semiconductor light-emitting device comprises: a mounting substrate; a plurality of semiconductor light-emitting elements that are arranged on the mounting substrate; a light absorber that is formed so as to cover an entire region between the plurality of semiconductor light-emitting elements adjacent to each other on the mounting substrate; and a wiring group including a plurality of wirings wired to each of the plurality of semiconductor light-emitting elements. | 07-23-2015 |
20150192817 | LIQUID CRYSTAL DISPLAY APPARATUS - A liquid crystal display apparatus with electrodes comprising openings that is less susceptible to disturbance of the contour shape of the display part. The apparatus includes two substrates, a first electrode, a second electrode. A display part is demarcated in a region where the two electrodes overlap, and an offset region is set from the display part edge to the inside. The electrodes comprise first openings disposed in a non offset region, and second openings disposed in the offset region. First openings comprises a shape wherein a branch part disposed so that the longitudinal direction thereof extends along a first direction and a branch part disposed so that the longitudinal direction thereof extends along a second direction are connected. Second openings comprises openings disposed so that the longitudinal direction thereof extends along the first direction, and openings disposed so that the longitudinal direction thereof extends along the second direction. | 07-09-2015 |
20150177577 | LIQUID CRYSTAL DISPLAY DEVICE - To provide an IPS mode liquid crystal display device suitable for a segment display type that is easy to dispose each electrode and lead wirings on the same surface. The liquid crystal display device comprises first lead wirings each connected to one of the first electrodes, second lead wirings each connected to one of the second electrodes, a terminal part exposed on one edge of the first substrate without overlapping the second substrate, first external extraction electrode terminals, a detour wiring provided to the terminal part that connects several second lead wirings of the plurality of second lead wirings to each other, with each of first external extraction electrode terminals electrically insulated, second external extraction electrode terminals where each is connected to the second lead wirings connected to the detour wirings or the second lead wirings not connected to the detour wirings of the second lead wirings. | 06-25-2015 |
20150177576 | LIQUID CRYSTAL DISPLAY ELEMENT - Provided is a liquid crystal display element including: a first substrate which includes a first electrode; a second substrate which is disposed to oppose the first substrate and includes a second electrode; and a liquid crystal layer which is disposed between the first substrate and the second substrate, in which at least one of the first electrode and the second electrode includes a plurality of openings which are elongated in a first direction and are adjacent to each other along the first direction, and when two openings of the plurality of openings which are adjacent to each other along the first direction are viewed, one of opening widths of opposing portions is large and the other thereof is small. | 06-25-2015 |
20150153680 | APPARATUS FOR MEASURING DEPOSITED TONER AMOUNT COMMONLY FOR THICKNESS AND AREA DETERMINING REGIONS - In an apparatus for measuring a deposited toner amount of a toner patch formed on a toner carrier, an intersection between a light outgoing and incoming plane including an optical axis of the light emitting portion and light receiving portion of an optical sensor and a surface of the toner carrier is perpendicular to a direction of propagation thereof. The light outgoing and incoming plane is inclined at a mounting angle toward the direction of propagation of the toner carrier with respect to a plane including the intersection. A control unit calculates the deposited toner amount in accordance with one of a peak value and a bottom value of a sense voltage in a thickness determining region and calculates the deposited toner amount in accordance with the other of the peak value and the bottom value in an area determining region. | 06-04-2015 |
20150129922 | SEMICONDUCTOR LIGHT EMITTING DEVICE PROVIDING GRADED BRIGHTNESS - A semiconductor light emitting device includes a semiconductor lamination including a p-type semiconductor layer, an active semiconductor layer, and an n-type semiconductor layer; opposing electrode structure including a first electrode structure formed above the p-type semiconductor layer, and a second electrode structure formed above the n-type semiconductor layer; and brightness grade producing structure including a surface layer of at least one of the p-type semiconductor layer and the n-type semiconductor layer and producing brightness grade gradually changing from one edge to opposite edge of light output plane. | 05-14-2015 |
20150129835 | MULTIPLE QUANTUM WELL SEMICONDUCTOR LIGHT EMITTING ELEMENT - A semiconductor light emitting element includes: an n-type semiconductor layer; a super lattice structure layer formed on the n-type semiconductor layer and including repeatedly-formed first semiconductor layers and second semiconductor layers having a composition with a band gap greater than that of the first semiconductor layer; an electron injection control layer including a first control layer formed on the second semiconductor layer of super lattice structure layer and a second control layer formed on the first control layer; and an MQW light emitting layer formed on the second control layer and including repeatedly-formed barrier layers and quantum well layers. The first control layer has a composition with a band gap smaller than that of the second semiconductor layer of super lattice structure layer. The second control layer has a composition and a thickness same as or smaller than those of the quantum well layer of the MQW light emitting layer. | 05-14-2015 |
20150117041 | OPTICAL APPARATUS AND AUTOMOBILE LIGHTING - An optical apparatus includes first and second substrates disposed to oppose each other, the first substrate having a first electrode provided on a surface of the first substrate nearer to the second substrate, and the second substrate having a second electrode provided on a surface of the second substrate nearer to the first substrate, and an electrolyte layer sandwiched between the first and the second substrates, and containing electro-deposition material including silver, wherein when potential of the first electrode is used as reference, a first voltage of positive polarity is applied in a first period to the second electrode, and a second voltage of positive polarity lower than the first voltage is applied in a second period after the first period to the second electrode. | 04-30-2015 |
20150084082 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT - A semiconductor light-emitting element includes: an ohmic electrode layer formed on a surface of a semiconductor structure layer including a light-emitting layer; a reflective metal layer containing Ag formed so as to cover at least ends of the ohmic electrode layer; and a covering electrode layer formed so as to bury the reflective metal layer. | 03-26-2015 |
20150077824 | OPTICAL DEFLECTING MIRROR DEVICE HAVING FIGURE "8"-SHAPED RIB AND OPTICAL DEFLECTOR - An optical deflecting mirror device includes a circular or elliptical mirror with a reflective front surface, and a figure “8”-shaped reinforcement rib provided on a rear surface of the mirror symmetrically along a rocking axis of the mirror. The figure “8”-shaped reinforcement rib includes two ring-shaped reinforcement ribs coupled to each other along the rocking axis. | 03-19-2015 |
20150055678 | INFORMATION ACQUISITION DEVICE FOR OBJECT TO BE MEASURED - Provided is an information acquisition device for an object to be measured that smoothly acquires various types of information on an object to be measured even in the dark. The information acquisition device for an object to be measured includes: an imaging device which generates a pickup image regarding an image pickup range; a distance calculation unit which calculates a distance to the object to be measured based on the reflected light of modulated light emitted toward the image pickup range; a temperature detection device which detects a temperature of each image pickup section of the image pickup range corresponding to each image section of the pickup image; and an information acquisition unit which acquires information on the object to be measured based on the distance to the object to be measured and the temperature of each image pickup section detected by the temperature detection device. | 02-26-2015 |
20150055318 | STROBE LIGHT DEVICE - While maintaining weathering resistance, occurrence of whitening in the lens of the strobe light device is prevented and a color temperature of the emitted light required by the strobe light device is adjusted to fall into a preferable range. A lens of the strobe light device contains a base material and an ultraviolet absorber, and the base material is methacrylic resin. The ultraviolet absorber is contained at the rate of between or equal to 0.01 and 0.3 parts by mass, to 100 parts by mass of the base material. The lens may further contain a visible light absorber as a color temperature adjuster, and the visible light absorber preferably has a maximum absorption wavelength of between or equal to 380 nm and 495 nm. | 02-26-2015 |
20150055039 | LIQUID CRYSTAL ELEMENT AND LIQUID CRYSTAL DISPLAY APPARATUS - To provide a liquid crystal element with a high contrast ratio capable of achieving both optical control that utilizes a memory property and optical control capable of supporting moving image displays. The two substrates are disposed with an angle formed by the respective orientation processing directions from 0° to less than 40°. The liquid crystal layer includes chiral material capable of generating a second orientation state that includes a twist different from that of the first orientation state in the liquid crystal molecules of the layer. The liquid crystal layer transitions from the second orientation state to the first orientation state and vice versa by the application of an electric field, and returns to the second orientation state when an electric field is applied in the second orientation state, thereby generating an orientation change in accordance with the size of the electric field, and the electric field is subsequently released. | 02-26-2015 |
20140355088 | OPTICAL DEFLECTOR INCLUDING SEPARATED PIEZOELECTRIC PORTIONS ON PIEZOELECTRIC ACTUATORS AND ITS DESIGNING METHOD - In an optical deflector including a mirror, a frame, torsion bars, first and second piezoelectric actuators coupled to both of the torsion bars, and first and second coupling bars, each of the first and second piezoelectric actuators is divided into first, second and third areas in accordance with a polarization polarity distribution obtained by performing a simulation upon the optical deflector where piezoelectric portions with no slits are hypothetically provided in the first and second piezoelectric actuators while a predetermined rocking operation is performed upon the mirror. First piezoelectric portions are formed in the first and third areas of the first piezoelectric actuator, and second piezoelectric portions are formed in the first and third areas of said second piezoelectric actuator. A first drive voltage applied to the first piezoelectric portions is opposite in phase to a second drive voltage applied to the second piezoelectric portions. | 12-04-2014 |
20140354929 | LIQUID CRYSTAL DISPLAY APPARATUS - To improve the display quality of a vertical alignment liquid crystal display apparatus. The apparatus comprises two substrates, a first electrode extending in a first direction, a second electrode extending in a second direction intersecting the first direction, a crystal layer provided between the substrates, a pixel is configured where the two electrodes intersect, an electrode edge of the second electrode is of a shape that includes line segments obliquely crossed relative to the second direction and bend back, the pixel edges of the pixel are demarcated, including the line segments that are obliquely crossed, and the liquid crystal layer is disposed so that the angle of the alignment direction of the crystal molecules at the center and the direction perpendicular to the second direction is greater than 0°, and the alignment direction of the crystal molecules and the direction of obliquely crossed line segments don't become perpendicular. | 12-04-2014 |
20140354867 | LINEAR LIGHT SOURCE APPARATUS AND IMAGE READING APPARATUS - A linear light source apparatus is provided, being configured to convert light emitted from one light emitting element to light extended linearly, and output thus converted light. There is a lens that diffuses light flux within a predetermined region including the optical axis of the light emitting element, out of the light incident from the light emitting element, at a predetermined diffusion angle in the second direction (x-direction). The light is made to converge with respect to the first direction (y-direction). This converts the light from one light emitting element to light extended linearly and outputs the converted light. As for the second direction (x-direction), it is possible to make the light flux sparse in the predetermined region, and in the region outside thereof, the light flux is rendered to be dense. Therefore, a distribution of light quantity in the longitudinal direction (x-direction) is implemented by controlling the light flux density, upon employing the linear light source apparatus as a light source of the image reading apparatus. | 12-04-2014 |
20140347874 | LIGHT EMITTING DEVICE, VEHICLE LIGHT AND VEHICLE - Provided is a light emitting device used in a vehicle light, the light emitting device can include: an excitation light source that generates excitation light; a wavelength conversion member that absorbs the excitation light and that converts a wavelength of the excitation light to emit light in a predetermined wavelength region that can be different from the wavelength of the excitation light; and a first optical system that directs the excitation light from the excitation light source to the wavelength conversion member, wherein the wavelength conversion member includes at least a first surface, a second surface facing the first surface, and a peripheral end surface arranged between the first surface and the second surface. The first optical system is configured to direct the excitation light from the excitation light source to the first surface. At least part of the second surface is covered by a first light blocking structure. | 11-27-2014 |
20140346944 | LIGHT SOURCE DEVICE AND FILAMENT - A light source device comprising a filament showing high electric power-to-visible light conversion efficiency is provided. The light source device of the present invention comprises a translucent gastight container, a filament disposed in the translucent gastight container, and a lead wire for supplying an electric current to the filament. The filament comprises a substrate formed from a metal material and a visible light-absorbing film covering the substrate. The visible light-absorbing film is transparent to lights of infrared region. The reflectance of the substrate for visible lights is thereby made low, and the reflectance of the substrate for infrared lights is thereby made high. Therefore, radiation of infrared lights is suppressed, and visible luminous efficiency can be enhanced. | 11-27-2014 |
20140321147 | LAMP UNIT - A lamp unit for a vehicle lamp can include: a lens having an aspherical shape, including a first lens portion, and a second lens portion disposed adjacent to the first lens portion and forming a concave portion on at least a part of a rear side surface thereof; a first reflective surface disposed rearward of the first lens portion; a second reflective surface disposed rearward of the second lens portion; a first light source configured to emit light to be reflected by the first reflective surface, pass through the first lens portion and be emitted forward; and a second light source configured to emit light to be reflected by the second reflective surface, pass through the second lens portion and be emitted forward. A shape of a rear side surface of the second lens portion can be configured to diffuse the light from the second light source vertically and horizontally. | 10-30-2014 |
20140321145 | VEHICLE LIGHTING UNIT - A vehicle lighting unit can include at least one optical module including: first and second light sources; first and second optical member configured to control light from the first and second light sources, respectively; and an outer peripheral optical member configured to surround the first optical member. The first optical member can include an incident surface, and front and rear surfaces and receive light from the first light source through the incident surface and reflect the light by part of the front surface and then part of the rear surface to project the reflected light through part of the front surface. The second optical member is configured to guide the light from the second light source to the outer peripheral optical member so that the light exits through the outer peripheral optical member, and the second light source, and the second optical member are disposed behind the first optical member. | 10-30-2014 |
20140319534 | SEMICONDUCTOR LIGHT EMITTING ELEMENT - A semiconductor light emitting element comprises an optical semiconductor laminated layer providing vias, an electrode that is disposed on a surface of the optical semiconductor laminated layer and separated from the second semiconductor layer in a peripheral portion of the electrode, a first transparent insulating layer that is disposed between the peripheral portion of the electrode and the optical semiconductor laminated layer, and a second transparent insulating layer that is disposed to cover the electrode, that envelops the peripheral portion of the electrode together with the first transparent insulating layer. | 10-30-2014 |
20140319455 | SEMICONDUCTOR LIGHT EMITTING APPARATUS - A semiconductor light emitting apparatus includes semiconductor lamination of n-type layer, active layer, and p-type layer; recess penetrating the lamination from the p-type layer and exposing the n-type layer; n-side electrode formed on the n-type layer at the bottom of the recess and extending upward above the p-type layer; a p-side electrode formed on the p-type layer and having an opening surrounding the recess in plan view, the n-side electrode extending from inside to above the recess; and an insulating layer disposed between the p-side and the n-side electrodes on the p-type layer, the p-side electrode constituting a reflective electrode reflecting light incident from the active layer, the n-side electrode including a reflective electrode layer covering the opening in plan view and reflects light incident from the emission layer side, the reflective electrode layer having peripheral portion overlapping peripheral portion of the p-side electrode in plan view. | 10-30-2014 |
20140313762 | VEHICLE HEADLIGHT AND PROJECTION LENS - A vehicle headlight can form a predetermined high-beam light distribution pattern, while being capable of causing the chromaticity of the entire light distribution pattern to fall within a white range (JIS D5500). The vehicle headlight can include: a projection lens that can control light incident on its light incident surface at a first incident position near its optical axis to be directed in a direction not parallel to the optical axis, can control light incident at a second incident position away from the optical axis to be directed in a direction parallel to the optical axis, and can control light incident at an incident position between the first and second incident positions to be directed in a direction closer to the direction parallel to the optical axis as the light is incident at an incident position closer from the first incident position to the second incident position. | 10-23-2014 |
20140313758 | LIGHTING UNIT FOR VEHICLE LAMP - A lighting unit for a vehicle lamp, can include a lens body including an incident surface, a light exit surface, and a reflecting surface configured to internally reflect light having entered the lens body through the incident surface, toward the light exit surface; and a horizontally long light-emitting section disposed at or substantially near a rear focus of the lens body to emit light that enters an inside of the lens body through the incident surface and is internally reflected by the reflecting surface before exiting through the light exit surface. The reflecting surface has at least two V-grooves formed so as to extend along a plane including an optical axis of the horizontally long light-emitting section, the V-grooves being disposed adjacent to each other in a circumferential direction of the reflecting surface. The lighting unit can form horizontally long projected light source images regardless of light exit positions. | 10-23-2014 |
20140286692 | PIVOT HOLDER STRUCTURE FOR VEHICLE LIGHTING UNIT - A vehicle lighting unit can have an aiming mechanism with a pivot holder structure such that a pivot attached to a reflector that holds a bulb is supported by a pivot holder integrally formed with a housing while the pivot is rotatable and an adjustment bolt is provided, so that the rotation of the adjustment bolt can achieve adjustment of an optical axis by inclining the reflector. The pivot holder can include a reception seat extending in a direction perpendicular to a direction in which the pivot is inserted and having an arc-like curved surface for receiving a ball of the pivot, and a pair of claws extending in the direction perpendicular to the direction in which the pivot is inserted so as to be parallel with each other and configured to support the ball, the pair of claws being coupled to each other by an arc-shaped bridge. | 09-25-2014 |
20140286033 | VEHICLE LIGHTING UNIT - A vehicle lighting unit forming low-beam and high-beam light distribution patterns can include: a light source having a substrate, and a first light-emitting section and a second light-emitting section arranged in two rows on a surface of the substrate; a first optical system configured to control light emitted from the first light-emitting section to form at least part of the low-beam light distribution pattern; a second optical system configured to control light emitted from the second light-emitting section to form at least part of the high-beam light distribution pattern; a light-shielding section disposed between the first light-emitting section and the second light-emitting section, the light-shielding section configured to shield part of the light from the first light-emitting section so as not to enter the second optical system; | 09-25-2014 |
20140285994 | LIGHT-EMITTING BODY AND MANUFACTURING METHOD THEREOF, AND LIGHT-EMITTING DEVICE INCLUDING THE SAME - A lighter and smaller light-emitting device (for use in a vehicle lighting unit) using a light-emitting body and a manufacturing method of the light-emitting body are provided. The light-emitting device can include a light source configured to emit light for excitation, and a light-emitting body configured to absorb excitation light to emit fluorescence light. The light-emitting body can include: a first light-transmitting member with a plate shape and having a first surface, a second surface opposite to the first surface, and an outer peripheral surface between the first surface and the second surface; a phosphor layer disposed on the outer peripheral surface of the first light-transmitting member; a second light transmitting member disposed on an outer peripheral surface of the phosphor layer; and a light-shielding member (such as a reflection film) configured to cover the first surface. In this light-emitting device, the light source can be disposed such that the excitation light therefrom can be incident on the second surface, pass through the first light-transmitting member, and reach the phosphor layer. | 09-25-2014 |
20140284644 | LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - The present invention is directed to reduction of angle dependence of chromaticity in a phosphor layer, without using a light scattering agent, the phosphor layer being made up of phosphor particles adhered tightly to one another via a binder according to the spray coating method. The phosphor layer contains phosphor particles laid along the top surface of the light emitting element and the binder embedded into a gap between the phosphor particles, and the phosphor layer does not contain the light scattering agent. The area of a region on the upper surface of the phosphor layer is between or equal to 3% and 10% with respect to the area of the top surface of the light emitting element, the region being positioned at the gap between the phosphor particles and allowing the light being outputted to pass through the binder and directly reach the upper surface of the phosphor layer. This configuration makes the asperities smaller on the surface of the phosphor layer and reduces the angular dependence of chromaticity. | 09-25-2014 |
20140284550 | LIGHT-EMITTING DEVICE - A light-emitting device including a GaN-based semiconductor has a structure in which sequentially deposited are an n-type semiconductor layer, a superlattice structure layer including at least one InGaN superlattice layer, an active layer, an AlGaN-based semiconductor layer, and a p-type semiconductor layer. A concavo-convex structure is formed on the interface of the AlGaN-based semiconductor layer with the p-type semiconductor layer. The active layer is an InGaN layer or an InGaN quantum well layer. The InGaN superlattice layer has an In composition that is greater than that of the active layer. | 09-25-2014 |
20140268856 | VEHICLE HEADLIGHT - Light emitted from a light source having an S/P ratio being 2.0 or more is projected to a peripheral area in front of a vehicle body, and thereby an earlier awareness with the peripheral vision under dark environment (e.g., during nighttime driving) can be facilitated. | 09-18-2014 |
20140268849 | VEHICLE LIGHTING UNIT - A vehicle lighting unit can be provided to maintain a basic design without design limitation and to show the color change of the reflector in a gradation manner, when the lighting unit is turned off, with a simple configuration. The vehicle lighting unit such as a positioning lamp can include a housing, an outer lens covering the opening section thereof, the outer lens defining a lighting chamber together with the housing; a light source (bulb); and a reflector having a dummy section where light from the light source does not reach, the light source and the reflector being housed in the lighting chamber. In this configuration, a plurality of slit-like holes are formed in the dummy section of the reflector at appropriate intervals in a direction of a vehicle width so as to have a size increased gradually as it is positioned more outward in the vehicle width direction. | 09-18-2014 |
20140268846 | VEHICLE HEADLIGHT - A vehicle headlight can be configured such that the size of the vehicle headlight which includes a semiconductor laser element employed as a light source is reduced. The vehicle headlight can includes: a projection lens disposed on an optical axis extending in a front-to-rear direction of a vehicle body; a light-emitting device including a semiconductor laser element configured to emit a laser beam and a light-transmitting member configured to absorb and convert the wavelength of at least part of the laser beam from the semiconductor laser element; and a first reflection surface configured to reflect the light from the light-emitting device so as to transmit and project forward the resulting light through the projection lens. The vehicle headlight can further include: a light detection unit configured to detect a light beam of a specific color, the light detection unit being disposed between the projection lens and the light-emitting device and below the optical axis; a second reflection surface configured to reflect the light beam from the light-emitting device toward the light detection unit, the second reflection surface being disposed ahead of the front end of the first reflection surface; and a control unit configured to control the semiconductor laser element in accordance with a detection result provided by the light detection unit so that the semiconductor laser element does not emit the laser beam. | 09-18-2014 |
20140268787 | LIGHT-EMITTING DEVICE - A light-emitting device can have high heat dissipation performance from a light-transmitting member and be capable of easily making alignment of the light-transmitting member and an incidence hole for light into the light-transmitting member. The light-emitting device can include: a base; a light-emitting element held by the base; a lens held by the base and disposed above the light-emitting element, configured to condense light emitted from the light-emitting element; a first tubular member disposed on the base; a second tubular member fitted into the first tubular member; a holder allowed to be inserted into the second tubular member and thereby fitted into the second tubular member and having a through hole through which light condensed by the lens passes; and a light-transmitting member formed on the holder so as to block the through hole. | 09-18-2014 |
20140268271 | OPTICAL DEFLECTOR INCLUDING MEANDER-TYPE PIEZOELECTRIC ACTUATORS COUPLED BY CROSSING BARS THEREBETWEEN - In an optical deflector including a mirror, a fixed frame surrounding the mirror, and first and second piezoelectric actuators of a meander-type provided opposite to each other with respect to the mirror, for rocking the mirror around an axis on a plane of the fixed frame, the first piezoelectric actuator includes a plurality of first piezoelectric cantilevers folded at first folded portions and coupled to the fixed frame, and the second piezoelectric actuator includes a plurality of second piezoelectric cantilevers folded at second folded portions and coupled to the fixed frame. The optical deflector further includes at least one first crossing bar coupled between one of the first folded portions and one of the second folded portions symmetrically located with respect to the mirror. | 09-18-2014 |
20140246686 | OPTICAL SEMICONDUCTOR DEVICE INCLUDING ANTIPARALLEL SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND SCHOTTKY DIODE ELEMENT - An optical semiconductor device includes a semiconductor support substrate of a conductivity type having a first resistivity, a semiconductor layer of the conductivity type formed on the semiconductor support substrate and having a second resistivity higher than the first resistivity, a first power supply terminal having a first metal in Schottky barrier contact with the semiconductor layer along with the semiconductor support substrate, so that a Schottky diode element is constructed by the first power supply terminal and the semiconductor layer along with the semiconductor support substrate, a second power supply terminal having a second metal in ohmic contact with the semiconductor support substrate, and a semiconductor light-emitting element connected between the first and second power supply terminals, the semiconductor light-emitting element being antiparallel with the Schottky diode with respect to the first and second power supply terminals. | 09-04-2014 |
20140233253 | VEHICLE HEADLIGHT - A vehicle headlight utilizes a rotationally asymmetric projection lens with its light emitting surface inclined with respect to the optical axis thereof, whereby the light emitted from the light source and projected forward through the light emitting surface of the projection lens is diffused substantially uniformly with respect to the optical axis of the projection lens, for example, uniform substantially in the right and left directions and/or the upper and lower directions. This can be achieved by designing the reflecting surface to have its optical axis inclined with respect to the optical axis of the projection lens by a predetermined angle so that light emitted from the light source and projected forward through the light emitting surface of the projection lens is made uniform with respect to the optical axis of the projection lens (for example, uniform substantially in the right and left directions and/or the upper and lower directions). | 08-21-2014 |
20140233210 | SEMICONDUCTOR LIGHT SOURCE APPARATUS - A semiconductor light source apparatus can emit various color lights having high brightness. The light source apparatus can include a phosphor layer directly disposed on a reflective layer and metallic bumps located between the reflective layer and a radiating substrate. The phosphor layer can be composed of at least one of a glass phosphor and a phosphor ceramic and can include at least one of a yellow phosphor, a red phosphor, a green phosphor and a blue phosphor. The light source can be located adjacent the phosphor layer so that light having high brightness emitted from the light source can be reflected on the reflective layer and heat of the phosphor layer can radiate from the radiating substrate via the metallic bumps. Thus, the disclosed subject matter can provide semiconductor light source apparatuses that can emit various color lights having high brightness, and which can be used for headlight, etc. | 08-21-2014 |
20140211493 | VEHICLE LIGHTING UNIT - A vehicle lighting unit includes LEDs mounted on a substrate, and an elongated inner lens configured to receive light from the LEDs and guide the light along its lengthwise direction so as to emit light from its front surface. The inner lens includes a first light guiding section extending in the left-to-right direction and a second light guiding section extending in the vertical direction, and a bending section between the first and second light guiding sections. The bending section includes a first reflection surface and a second reflection surface. The first and second reflection surfaces internally reflect light toward the first and second light guiding sections, respectively. The LEDs include a first LED and a second LED, disposed in the rear of the first reflection surface and the second reflection surface, respectively. | 07-31-2014 |
20140211115 | LIQUID CRYSTAL DISPLAY DEVICE AND EQUIPMENT MOUNTED WITH LIQUID CRYSTAL DISPAY DEVICE - A liquid crystal display device comprising:
| 07-31-2014 |
20140203306 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - A semiconductor light-emitting device can include a wavelength converting layer including a surrounding portion, which covers at least one semiconductor light-emitting chip in order to emit various colored lights including white light. The semiconductor light-emitting device can include a substrate, a frame located on the substrate, the chip mounted on the substrate, a transparent material layer located on the wavelength converting layer so as to reduce from the wavelength converting layer toward a light-emitting surface thereof, and a reflective material layer disposed at least between the frame and both side surfaces of the wavelength converting layer and the transparent material layer. The semiconductor light-emitting device can be configured to improve light-emitting efficiency and a color variation by using the surrounding portion and an inclined side surface of transparent material layer, and therefore can emit various colored lights including white light having a high light-emitting efficiency from a small light-emitting surface. | 07-24-2014 |
20140197445 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - A semiconductor light-emitting device including a favorable radiating structure can include a semiconductor light source sealed between a metallic cap having a light-emitting window and a metallic base attached on a heat sink plate. The semiconductor light-emitting device can also include a holder attaching the metallic base along the metallic cap between the holder and the heat sink plate to efficiently radiate heat generated from the light source, and a thermal interface material layer disposed between at least a top surface of the heat sink plate and an outer bottom surface of the holder so as to be able to enlarge each tolerance of parts composing the light-emitting device. Thus, the disclosed subject matter can provide semiconductor light-emitting devices including the favorable radiating structure, which can be employed for various lighting apparatuses including a headlight in a relatively small size by selecting the semiconductor light source incorporated in the devices. | 07-17-2014 |
20140183531 | METHOD FOR PRODUCING P-TYPE ZnO BASED COMPOUND SEMICONDUCTOR LAYER, METHOD FOR PRODUCING ZnO BASED COMPOUND SEMICONDUCTOR ELEMENT, AND AN N-TYPE ZnO BASED COMPOUND SEMICONDUCTOR LAMINATE STRUCTURE - A method for producing a p-type ZnO based compound semiconductor layer including the steps of (a) supplying (i) Zn, (ii) O, (iii) optional Mg, and (iv) a Group 11 element which is Cu and/or Ag to form a Mg | 07-03-2014 |
20140160782 | LIGHT EMITTING DEVICE AND VEHICLE LAMP - A light emitting device can include a head portion including a surface including a convex portion, a back surface on the opposite side, and a through hole penetrating a tip surface of the convex portion and the back surface; a light-transmitting member including a surface and a back surface on the opposite side, the back surface including a first recess to be fitted to the convex portion; an adhesive bonding part of the surface of the head portion around the convex portion to the back surface of the light-transmitting member while the convex portion is fitted to the first recess and the first recess covers the through hole; a semiconductor light emitting element that emits light passing through the through hole for irradiation of the light-transmitting member; and an optical system condensing the light from the semiconductor light emitting element and locally irradiates the light-transmitting member with the light. | 06-12-2014 |
20140160386 | LIQUID CRYSTAL ELEMENT AND LIQUID CRYSTAL DISPLAY APPARATUS - A liquid crystal element achieving both optical control utilizing a memory property and optical control capable of supporting moving image displays is disclosed. The first substrate and the second substrate of the element are set in an orientation process direction that ensures generation of a first orientation state, and a chiral material that generates a second orientation state is included in the liquid crystal layer. The layer transitions from the second orientation state to the first orientation state when an electric field of a layer thickness direction is applied. The layer transitions from the first orientation state to the second orientation state when an electric field of a direction perpendicular to the layer thickness direction is applied. And the layer returns to the second orientation state when an orientation change is generated according to the strength of the electric field when an electric field of the perpendicular direction is applied. | 06-12-2014 |
20140153276 | LIGHT EMITTING DEVICE AND VEHICLE LAMP - A light emitting device can include a base portion including a surface, a back surface, and a first through hole penetrating the surface and the back surface. A light-transmitting member can be fixed to the surface so as to cover the first through hole. A semiconductor light emitting element can emit light to pass through the first through hole and for irradiating the light-transmitting member. An optical system can be provided for condensing the light from the semiconductor light emitting element and locally irradiating the light-transmitting member with the light. A foil body can be provided and can include a second through hole for light emitted from the light-transmitting member to pass through and has elasticity. The light-transmitting member can be sandwiched between the foil body around the second through hole and the base portion with part of the light-transmitting member exposed from the second through hole. | 06-05-2014 |
20140131745 | SEMICONDUCTOR LIGHT EMITTING DEVICE - An LED device includes first and second LED elements containing a lower layer of first conductivity type, an active layer, and an upper layer of second conductivity type, wherein the second LED element has third and fourth electrodes on the lower layer, recessed portion having a side surface exposing the upper, active and lower layers, and reaching the third electrode, fifth electrode disposed on the upper layer extending on the side surface of the recessed portion, and connected with the third electrode, and groove extending from the upper layer and reaching the active layer between the third and fourth electrodes to electrically separate the third electrode from the fourth electrode. | 05-15-2014 |
20140110736 | SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD - A semiconductor light-emitting device and a method for manufacturing the same can include a wavelength converting layer located over a semiconductor epitaxial layer in order to emit various colored-lights including white light. The light-emitting device can include a semiconductor chip substrate configured not to transmit light emitted from the epitaxial layer and mounted on a mounting board, and a transparent resin layer located between the wavelength converting layer and the epitaxial layer mounted on the semiconductor chip substrate so as to extend from a side surface of the wavelength converting layer towards a substantially edge portion of the semiconductor chip substrate. The semiconductor light-emitting device can be configured to improve a color variability of a mixture light emitted from the device by using the transparent resin layer and the wavelength converting layer, and therefore can emit the mixture light having a substantially uniform color tone from a small light-emitting surface. | 04-24-2014 |
20140085923 | LIGHT EMITTING DEVICE - A light emitting device can project high density laser light by collecting laser light to irradiate in a spotlight manner while remedying local brightness saturation and temperature quenching, and can suppress the lowering of efficiency due to such local brightness saturation and temperature quenching. The light emitting device can include an excitation light source for emitting excitation light; a wavelength conversion member including a diffusion layer and a wavelength conversion layer. The Device can include an optical system configured to collect the excitation light from the excitation light source to irradiate the first face with the collected excitation light in a spotlight manner. In the light emitting device, the diffusion layer can have a thickness that is set in such a manner that brightness distribution of the diffused light exiting through the second face does not include a local peak. | 03-27-2014 |
20140085584 | LIQUID CRYSTAL DISPLAY APPARATUS - The apparatus comprises a first and a second substrate disposed facing each other, a first electrode comprising first openings provided to the first substrate, a second electrode comprising second openings provided to the second substrate, and a liquid crystal layer disposed between the first and the second substrate. A display part is defined in a region where the first and the second electrode overlap, each of the first openings is formed into a rectangular shape in the planar view, each of the second openings is formed into a rectangular shape or cruciform shape in the planar view, the second electrode comprises rectangular regions cyclically disposed inside the display part in the planar view, the four sides that define each of the rectangular regions respectively contact any portion of the second openings, and each of the first openings is disposed overlapping any of the rectangular sections in the planar view. | 03-27-2014 |
20140085581 | CHARACTER TYPE VERTICAL ALIGNMENT MODE LIQUID CRYSTAL DISPLAY DEVICE WITH WALL LAYERS - In a character type vertical alignment type liquid crystal display device including first and second substrates opposing each other, a first electrode layer including a plurality of first electrodes provided at an inner side of the first substrate, a second electrode layer including a plurality of second electrodes provided at an inner side of the second substrate, and a vertical alignment mode liquid crystal layer provided between the first and second substrates, a wall structure is provided between the first and second substrates. | 03-27-2014 |
20140084786 | LIGHT SOURCE DEVICE - A filament of simple structure showing improved conversion efficiency is provided. There is provided a light source device comprising a light-transmitting gas-tight container, a filament disposed in the light-transmitting gas-tight container, and a lead wire for supplying an electric current to the filament, wherein the filament consists of a single crystal. Sum of concentration of lattice defects and impurity concentration of the filament consisting of a single crystal is preferably lower than 0.01%. | 03-27-2014 |
20140084785 | LIGHT SOURCE DEVICE, METHOD FOR MANUFACTURING THE SAME AND FILAMENT - A filament showing high radiation characteristics and hardly suffering from disconnection and film separation is provided by using a high melting point metal compound such as tantalum carbide. As the filament, a filament comprising a tungsten base material | 03-27-2014 |
20140084288 | ZnO BASED COMPOUND SEMICONDUCTOR ELEMENT, AND METHOD FOR PRODUCING THE SAME - A method for producing a ZnO based semiconductor element comprises the steps of (a) forming an n-type ZnO based semiconductor layer, (b) forming a ZnO based semiconductor active layer above the n-type ZnO based semiconductor layer, (c) forming a first p-type ZnO based semiconductor layer above the ZnO based semiconductor active layer, and (d) forming a second p-type ZnO based semiconductor layer above the first p-type ZnO based semiconductor layer, wherein the step (d) comprises the steps of (d1) forming an n-type Mg | 03-27-2014 |
20140078429 | VERTICAL ALIGNMENT TYPE LIQUID CRYSTAL DISPLAY APPARATUS HAVING IMPROVED DISPLAY UNIFORMITY - A mono domain vertical alignment type liquid crystal display apparatus to be multiplex driven is provided whose display uniformity at a large pretilt angle (near 90°) is improved. Waveform A is applied to a liquid crystal cell of a mono domain vertical alignment type, the waveform A having a duty not lower than 4 and a frame frequency of f. The frame frequency f is determined from a pretilt angle θp, and is a frequency not lower than 60 Hz at a pretilt angle of 88.5°≦θp<89.6° or a frequency not lower than [120×(θp−89.6)+60] Hz at a pretilt angle of 89.6°≦θp≦89.9°. | 03-20-2014 |
20140077237 | SEMICONDUCTOR LIGHT EMITTING APPARATUS - A light emitting apparatus with a combination of a plurality of LED chips and a phosphor layer is provided and can be configured to significantly reduce variations in chromaticity and luminance. The plurality of semiconductor light emitting devices (LED chips) are disposed with a gap therebetween, and the phosphor layer is formed on the upper surface thereof to bridge over the gaps between the LED chips. The phosphor layer may be uniform in thickness, but can be less in thickness over the gaps between the LED chips than on the upper surface of the LED chips. The phosphor layer can be continuously formed on the upper surface of the array of the chips with no phosphor layer present in between the chips. This configuration allows for reducing variations in luminance and chromaticity which may result from the gaps or the phosphor layer present in between the gaps. | 03-20-2014 |
20140071512 | OPTICAL DEFLECTOR INCLUDING MIRROR WITH RECESSED RIB ON ITS REAR SURFACE - In an optical deflector including a mirror, a rib formed at an outer circumference of the mirror, a support frame surrounding the mirror, at least one torsion bar arranged along an axis of the mirror and coupled between the support frame and the mirror, and a pair of actuators arranged between the support frame and the torsion bar, a recess opposing the torsion bar is formed within the rib. | 03-13-2014 |
20140071507 | OPTICAL DEFLECTOR INCLUDING NARROW PIEZOELECTRIC SENSOR ELEMENT BETWEEN TORSION BAR AND PIEZOELECTRIC ACTUATOR - In an optical deflector including a mirror, a support frame surrounding the mirror, at least one torsion bar arranged along an axis of the mirror having an end coupled to an outer circumference of the mirror, a pair of piezoelectric actuators arranged between the support frame and the torsion bar, and a piezoelectric sensor inserted between the torsion bar and one of the piezoelectric actuators, the piezoelectric sensor includes at least one piezoelectric sensor element having a width being smaller than two-fifths of a width of the one of the piezoelectric actuators and being arranged at a wide portion within two-fifths of the width from an inner end of the one of the piezoelectric actuators. | 03-13-2014 |
20140070254 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes a semiconductor lamination including a p-type semiconductor layer, an active semiconductor layer, and an n-type semiconductor layer; opposing electrode structure including a first electrode structure formed above the p-type semiconductor layer, and a second electrode structure formed above the n-type semiconductor layer; and brightness grade producing structure including a surface layer of at least one of the p-type semiconductor layer and the n-type semiconductor layer and producing brightness grade gradually changing from one edge to opposite edge of light output plane. | 03-13-2014 |
20140054621 | SEMICONDUCTOR LIGHT-EMITTING DEVICE INCLUDING TRANSPARENT PLATE WITH SLANTED SIDE SURFACE - In a semiconductor light-emitting device including a substrate, a semiconductor light-emitting element mounted on a top surface of the substrate, a transparent plate adapted to cover a top surface of the semiconductor light-emitting element, a wavelength-converting layer formed between a top surface of the semiconductor light-emitting element and a bottom surface of the transparent plate, and a reflective material layer surrounding all side surfaces of the semiconductor light-emitting element, the wavelength-converting layer and the transparent plate, at least one of the side surfaces of the transparent plate is slanted in an inward direction at the bottom surface of the transparent plate. | 02-27-2014 |
20140036526 | VEHICLE LIGHTING UNIT - A vehicle lighting unit can include a daytime running lamp (DRL) function and a light emission unit that can be miniaturized. The vehicle lighting unit can include a headlamp (HL) unit having a HL light guiding lens and a DRL unit. The HL light guiding lens can include a light incident surface in front of a light source LED for HL, a front reflection surface, a rear reflection surface, and a light-transmitting section. The front reflection surface can internally reflect light from the light incident surface obliquely rearward and downward. The rear reflection surface can internally reflect the light from the front reflection surface. The light-transmitting section is disposed between the front and rear reflection surfaces in terms of its vertical direction. The DRL unit can be disposed behind the light-transmitting section, so that light from the DRL unit can pass through the light-transmitting section and projected forward. | 02-06-2014 |
20140029287 | PROJECTOR TYPE HEADLIGHT - A projector type headlight can include a projection lens arranged on an optical axis extending in a longitudinal direction of a vehicle, and a light source unit arranged on a more rear side than a back side focal plane of the projection lens, the projection lens including resin lenses which are arranged on the optical axis. A resin lens out of the resin lenses arranged closer to the light source unit includes a diffraction grating provided on a lens face in a side opposite to a light source, the resin lens out of the resin lenses arranged closer to the light source unit has a lens face having a positive power, which is arranged in a light source side, and the diffraction grating is designed so as to cancel chromatic aberration of light emitted from the light source unit and emitted forward through the resin lenses. | 01-30-2014 |
20140027766 | METHOD FOR PRODUCING P-TYPE ZnO BASED COMPOUND SEMICONDUCTOR LAYER, METHOD FOR PRODUCING ZnO BASED COMPOUND SEMICONDUCTOR ELEMENT, P-TYPE ZnO BASED COMPOUND SEMICONDUCTOR SINGLE CRYSTAL LAYER, ZnO BASED COMPOUND SEMICONDUCTOR ELEMENT, AND N-TYPE ZnO BASED COMPOUND SEMICONDUCTOR LAMINATE STRUCTURE - A method for producing a p-type ZnO based compound semiconductor layer is provided. The method comprises the steps of (a) preparing an n-type single crystal ZnO based compound semiconductor structure containing a Group 11 element which is Cu and/or Ag and at least one Group 13 element selected from the group consisting of B, Ga, Al, and In, and (b) annealing the n-type single crystal ZnO based compound semiconductor structure to form the p-type ZnO based compound semiconductor layer co-doped with the Group 11 element and the Group 13 element. | 01-30-2014 |
20140022804 | VEHICLE LIGHTING UNIT - A vehicle lighting unit is capable of enhancing the light utilization efficiency by effectively utilizing the part of light emitted from the semiconductor light emitting element that typically does not enter the light guide lens while being reflected by the light incident surface of the lens. The vehicle lighting unit can include a light guide lens a first surface configured to be disposed on a front side of a vehicle body, a second surface configured to be disposed on a rear side thereof and a recessed portion including a third surface; and a light emitting element disposed substantially at a reference point of the light guide lens. The second surface can include a reflection area extending from the recessed portion. The third surface can surround the semiconductor light emitting element, so that the light emitted from the semiconductor light emitting element can be incident on the third surface. | 01-23-2014 |
20140004634 | METHOD FOR MANUFACTURING LIGHT EMITTING APPARATUS, LIGHT EMITTING APPARATUS, AND MOUNTING BASE THEREOF | 01-02-2014 |
20130314935 | VEHICLE LIGHTING UNIT - A vehicle lighting unit can include LEDs and at least two long light guide bodies arranged adjacent to each other. At least two light transmitting lenses can be disposed in front of the at least two light guide bodies. The at least two light guide bodies each can include a gap portion interposed therebetween. A first end portion of the light transmitting lens can be positioned at the gap portion so that the first end portions of the light transmitting lenses overlap with each other in a front-rear direction. The first end portions of the at least two light transmitting lenses can have a surface processed portion on its front surface. The surface processed portions can be configured to direct light exiting through the respective first end portions of the at least two light guide bodies forward. | 11-28-2013 |
20130300714 | OPTICAL TOUCH PANEL INCLUDING VERTICALLY-ARRANGED LIGHT EMITTING ELEMENT AND LIGHT RECEIVING ELEMENT - In an optical touch panel including a first group of light emitting and receiving packages and a second group of light emitting and receiving packages provided on a display surface at opposite sides to each other, each of the light emitting and receiving packages is formed by one light emitting element and one light receiving element vertically arranged above the display surface. The light emitting element of each light emitting and receiving package of the first group opposes the light receiving element of one light emitting and receiving package of the second group, and the light emitting element of each light emitting and receiving package of the second group opposes the light receiving element of one light emitting and receiving package of the first group. | 11-14-2013 |
20130258432 | OPTICAL DEFLECTOR - An optical deflector is provided which can effectively suppress occurrence of a ringing phenomenon when a piezoelectric actuator is driven with a voltage signal of a sawtooth waveform. An optical deflector A | 10-03-2013 |
20130250600 | VEHICLE LIGHTING UNIT - A vehicle lighting unit can be capable of illuminating pedestrians and the like present in lateral areas above a horizontal line while suppressing generation of glare to oncoming or preceding vehicles. A vehicle lighting unit can also be capable of forming both a basic light distribution pattern and an overhead light distribution pattern without invading an area for reflecting light for forming a basic light distribution pattern. The vehicle lighting unit can include a projector lens disposed on an optical axis, a light source disposed behind a rear-side focal point of the projector lens, a reflecting surface configured to reflect light emitted from the light source so that the light is directed toward the optical axis, and a shade disposed between the projector lens and the light source. The shade can be configured to shield part of light emitted from the light source and reflected by the reflecting surface. | 09-26-2013 |
20130250599 | VEHICLE HEADLIGHT - A vehicle headlight of a small projector type can provide a favorable light distribution for an overhead sign area along with a light distribution used as a low beam. The headlight can include a semiconductor light source and a projector lens including first, second and third light-emitting surfaces. The headlight can project light having high brightness underneath a horizontal cut-off line while projecting other light in the downward direction using the first and third light-emitting surfaces. Additionally, the headlight can be configured to illuminate light having small chromatic aberration toward the overhead sign area using the second light-emitting surface located between the first and third light-emitting surfaces. Thus, the headlight can provide a favorable light distribution pattern used as a low beam and a favorable light distribution pattern for the overhead sign area using the light that color separation is inhibited so as to conform to a vehicular standard. | 09-26-2013 |
20130250390 | OPTICAL DEFLECTOR INCLUDING FOUR COUPLING BARS BETWEEN SUPPORT BODY AND FRAME - In an optical deflector including a mirror, a movable ring-shaped frame surrounding the mirror, a pair of torsion bars connected between the mirror and the movable ring-shaped frame and oppositely arranged along a rocking direction of the mirror, a support body surrounding the movable ring-shaped frame, and piezoelectric actuators for rocking the mirror through the torsion bars along the rocking direction, first, second, third and fourth coupling bars are connected between the support body and the movable ring-shaped frame. The first and third coupling bars are oppositely arranged along a first direction obtained by inclining the rocking direction by a first predetermined angle between +30° and +45°, and the second and fourth coupling bars are oppositely arranged along a second direction obtained by inclining the rocking direction by a second predetermined angle between −30° and −60°. | 09-26-2013 |
20130250381 | LIGHTING OPTICAL SYSTEM - A lighting optical system is electrically (instead of mechanically) controlled in terms of light distribution, while miniaturization of the optical system can be achieved with suppressed production costs. The lighting optical system can include a light source which emits light beams, a holographic liquid crystal element which converts the light beams from the light source to regeneration light beams forming a prescribed light distribution pattern or alternatively which allows the light beams to pass therethrough as they are, in accordance with a voltage applied thereto, a phosphor plate which can be excited by the regeneration light beams from the holographic liquid crystal element and emit visible light beams, and a lens which projects the visible light beams from the phosphor plate. | 09-26-2013 |
20130249961 | NON-SPECTACLED STEREOSCOPIC DISPLAY APPARATUS CAPABLE OF IMPROVING OPTICAL CHARACTERISTICS - A non-spectacled stereoscopic display apparatus includes a light guide plate, first and second light sources, a single-face prism sheet, a transmissive display panel, a synchronous drive circuit adapted to synchronize the first and second light sources to display parallax images on the transmissive display panel, a phase difference plate, and an optically-modulating structure adapted to receive light emitted from the phase difference plate. The optically-modulating structure includes first and second transparent substrates, a prism array provided on the first transparent substrate, a first transparent electrode layer, a second transparent electrode layer, a liquid crystal layer, and first and second alignment layers for performing an aligning process upon liquid crystal molecules of the liquid crystal layer. The phase difference plate is adapted to rotate a main polarization angle of the single-face prism sheet by a predetermined angle to coincide with an aligning direction of the liquid crystal layer. | 09-26-2013 |
20130248918 | SEMICONDUCTOR LIGHT EMITTING ELEMENT - A semiconductor light emitting element has a cross-sectional structure comprising a support substrate, a semiconductor lamination located over the support substrate, and a joint layer located between the semiconductor lamination and the support substrate, containing a first jointing layer located on the semiconductor lamination side and a second jointing layer located on the support substrate side. In the plan view, the semiconductor lamination has corner portions and side portions along the periphery, the first jointing layer is encompassed by the second jointing layer, the second jointing layer is encompassed by the semiconductor lamination, and an annular region defined between outlines of the semiconductor lamination and of the first jointing layer has first portions corresponding to the corner portions of the semiconductor lamination and second portions corresponding to the side portions of the semiconductor lamination, widths of the first portions being narrower than widths of the second portions. | 09-26-2013 |
20130248895 | LIGHT EMITTING DEVICE - A light emitting device includes a substrate elongated in a lengthwise direction; a plurality of LED chips disposed on the substrate in an intermediate region in widthwise direction, and aligned along the lengthwise direction at a distance of 80 μm or less; and interconnection wirings formed on regions outside the intermediate region in the widthwise direction; wherein each of the LED chips has a p-side electrode disposed on the substrate, a p-type semiconductor layer disposed on the p-side electrode, an active layer formed on the p-type semiconductor layer, and an n-type semiconductor layer formed on the active layer, and has a region in which the n-type semiconductor layer, the active layer, and the p-type semiconductor layer are patterned, and an n-side electrode formed selectively on a surface of the n-type semiconductor layer and connected to the p-side electrode of an adjacent LED chip through the interconnection wiring. | 09-26-2013 |
20130244361 | METHOD OF MANUFACTURING SEMICONDUCTOR ELEMENT - A method of manufacturing a semiconductor element includes forming an element structure layer having a semiconductor layer, on a first substrate. The method also includes forming a first bonding layer on the element structure layer. The method also includes forming a second bonding layer on a second substrate. The method also includes performing heating pressure-bonding on the first and second bonding layers, with the first and second bonding layers facing each other. One of the first bonding layer and the second bonding layer is an AU layer, and the other is an AuSn layer. The AuSn layer has a surface layer having an Sn content of between 85 wt % (inclusive) and 95 wt % (inclusive). | 09-19-2013 |
20130242587 | OUTER CASING FOR VEHICLE LAMP, VEHICLE LAMP AND MANUFACTURING METHOD FOR THE SAME - An outer casing for vehicle lamps, a vehicle lamp and a manufacturing method for the outer casing and the vehicle lamp can include an outer lens having a rib located at a peripheral portion thereof and a casing having a supporting portion located so as to face the rib formed in a ring shape. The rib of the lens can include an end portion formed in a convex shape in a width direction thereof in accordance with a light energy distribution of a laser welder, and can be attached to the casing with confidence by utilizing the energy distribution. Thus, the vehicle lamp using the outer casing can incorporate various lamps with an airtight structure and an adequate mechanical strength while preventing misalignment between the outer lens and the casing, and the manufacturing method can provide the outer casing using similar manufacture equipment as compared with conventional methods. | 09-19-2013 |
20130242369 | ELECTROCHROMIC DISPLAY - There is provided an electrochromic display that includes a display substrate, which includes a display electrode on a first substrate and an insulating film on or above the display electrode; a counter substrate having a counter electrode on a second substrate, the counter substrate facing the display substrate; and a color-developing layer containing an electrochromic material disposed in a region surrounded by a sealing member between the display substrate and the counter substrate. The insulating film is disposed on or above the display electrode except for a display region of the display electrode in the region surrounded by the sealing member. | 09-19-2013 |
20130242100 | HEADLIGHT CONTROLLER, OPTICAL UNIT AND VEHICLE HEADLIGHT - A headlight controller, an optical unit and a vehicle headlight can include a headlight controller and an optical unit. The headlight controller can include a system controller and a camera photographing vehicles located in a forward direction thereof, and the system controller can be configured to output a control signal to provide various favorable light distribution patterns by using image data output from the camera in accordance with traffic conditions. The optical unit can be configured to emit beam lights each having a light-emitting angle using lights emitted from first and second white LEDs via a projector lens so that the beam lights can be used as a high and low beam without movable parts. Thus, the disclosed subject matter can include providing vehicle headlights that can form various favorable light distribution patterns by utilizing the characteristics of the controller and the optical unit in accordance with the traffic conditions. | 09-19-2013 |
20130229610 | LIQUID CRYSTAL DISPLAY - A liquid crystal display includes first and second substrates placed opposite each other, a common electrode on one side of the first substrate to substantially cover a whole surface, a segment electrode on one side of the second substrate, a routing wire on one side of the second substrate and connected to the segment electrode, a liquid-crystalline resin film without electrical conductivity on one side of the second substrate, and a liquid crystal film between the substrates. The liquid-crystalline resin film has refractive index anisotropy being substantially equal to that of a liquid crystal material of the liquid crystal film, has molecular alignment being substantially equal to that of the liquid crystal film, and is disposed to fill a space between the routing wire and the common electrode. The liquid crystal film is disposed to fill a space between the segment electrode and the common electrode. | 09-05-2013 |
20130229599 | LIQUID CRYSTAL DISPLAY - A liquid crystal display includes first and second substrates placed opposite each other, a common electrode on one side of the first substrate to substantially cover a whole surface, a segment electrode on one side of the second substrate, a routing wire on one side of the second substrate and connected to the segment electrode, a liquid-crystalline resin film without electrical conductivity on one side of the second substrate, and a liquid crystal film between the substrates, and being subject to twisted alignment between the substrates. The liquid-crystalline resin film has refractive index anisotropy being substantially equal to that of a liquid crystal material of the liquid crystal film, is subject to twisted alignment, and is disposed to fill a space between the routing wire and the common electrode. The liquid crystal film is disposed to fill a space between the segment electrode and the common electrode. | 09-05-2013 |
20130228744 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - The light-emitting device includes a groove passing through a second semiconductor layer and a light-emitting layer to reach a first semiconductor layer; a first ohmic electrode in contact with the first semiconductor layer within the groove; a connection electrode passing through the first semiconductor layer from the surface thereof and electrically connected to the first ohmic electrode; an insulating layer for covering the second semiconductor layer on a surface thereof opposing the first semiconductor layer, the insulating layer having an opening; a second ohmic electrode in contact with the second semiconductor layer in the opening; a metal layer formed over the insulating layer, and connected to the second ohmic electrode; and a support bonded to the metal layer. | 09-05-2013 |
20130221389 | LIGHT EMITTING DEVICE AND METHOD - A light emitting device and a method of manufacturing the same are capable of enhancing brightness and color distribution characteristics on a light-exiting surface. The light emitting device can include: a substrate; a light emitting stacked body composed of a semiconductor light emitting element disposed on the substrate, a wavelength conversion layer disposed on the semiconductor light emitting element and containing phosphor particles, and a light-transmitting plate member disposed on the wavelength conversion layer; and a light-transmitting scattering member containing a scattering material and disposed on the light-transmitting plate member. | 08-29-2013 |
20130221384 | SEMICONDUCTOR LIGHT EMITTING ELEMENT ARRAY - A semiconductor light emitting element array contains: a support substrate; a plurality of semiconductor light emitting elements disposed on said support substrate, a pair of adjacent semiconductor light emitting elements being separated by street, each of the semiconductor light emitting elements including; a first electrode formed on the support substrate, a semiconductor lamination formed on the first electrode and including a stack of a first semiconductor layer having a first conductivity type, an active layer formed on the first semiconductor layer, and a second semiconductor layer formed on the active layer, and having a second conductivity type different from the first conductivity type, and a second electrode selectively formed on the second semiconductor layer of the semiconductor lamination; and connection member having electrical insulating property and optically propagating property, disposed to cover at least part of the street between a pair of adjacent semiconductor laminations. | 08-29-2013 |
20130215592 | STROBE DEVICE - A strobe device | 08-22-2013 |
20130214321 | SEMICONDUCTOR LIGHT EMITTING ELEMENT, METHOD OF MANUFACTURING THE SAME, AND VEHICLE LIGHTING UNIT UTILIZING THE SAME - There is provided a highly reliable semiconductor light emitting element and vehicle lighting unit as well as associated methods. The semiconductor light emitting element can include a support substrate, a semiconductor stacked body including a first semiconductor layer of a first conductivity type, an active layer formed on the first semiconductor layer, and a second semiconductor layer of a second conductivity type formed on the active layer. The element can further include a bonding layer configured to bond the support substrate and the semiconductor stacked body, the bonding layer having a side surface that forms an angle exceeding 90° with a surface of the bonding layer on the side of the semiconductor stacked body, and an interconnection layer configured to extend from the upper surface of the semiconductor stacked body to cover the side surface of the bonding layer. | 08-22-2013 |
20130214292 | SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREOF - A manufacturing method of a semiconductor element which can improve productivity and reliability, comprises a step of forming a device structure layer including a semiconductor layer on a first substrate; a step of forming a first metal layer on the device structure layer; a step of forming a second metal layer made of the same material as the first metal layer on a second substrate; a first treatment step of heating and compressing together the first metal layer and the second metal layer placed opposite to each other, thereby bonding them with maintaining a junction interface between the first and second metal layers; and a second treatment step of heating the first and second metal layers to make the junction interface disappear. Either one of the first and second metal layers has a coarse surface having multiple pyramid-shaped protrusions formed at its surface. | 08-22-2013 |
20130213460 | POWER GENERATION DEVICE, THERMAL POWER GENERATION METHOD AND SOLAR POWER GENERATION METHOD - A small sized power generator is provided, being highly efficient in power generation. The power generator can include a heat-light conversion element for converting heat to infrared light and a semiconductor power generation cell for converting the infrared light to electrical energy. The heat-light conversion element can include a material in which reflectance is higher on a long wavelength side of a predetermined infrared wavelength, relative to reflectance on a short wavelength side thereof. The material can cause radiation of the infrared light upon being heated. Heat from a heat source is transferred to the heat-light conversion element, thereby radiating the infrared light. The semiconductor power generation cell converts this infrared light to electrical energy, thereby performing thermal power generation. In order to heat the heat-light conversion element, a light collection optical system can be provided for collecting sunlight toward the heat-light conversion element, enabling solar thermo-photovoltaic power generation. | 08-22-2013 |
20130200748 | PIEZOELECTRIC ACTUATOR INCLUDING Ti/TiOx ADHESIVE LAYER AND ITS MANUFACTURING METHOD - A piezoelectric actuator includes a substrate, an oxide layer formed on the substrate, a Ti0 | 08-08-2013 |
20130193458 | SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD - A semiconductor light-emitting device and a method for manufacturing the same can include a wavelength converting layer located on at least one semiconductor light-emitting chip in order to emit various colored lights including white light. The semiconductor light-emitting device can include a casing having a cavity and a mounting surface, the chip mounted on the mounting surface, a transparent plate mounted on the wavelength converting layer within a top surface of the chip and a reflective layer located in the cavity so as to surround the transparent plate, the wavelength converting layer and the chip. The semiconductor light-emitting device can be configured to improve light-colored variability and light-emitting efficiency of the chip by using the reflective layer as a reflector, and therefore can emit a wavelength-converted light having a substantially uniform color tone and a high light-emitting efficiency from a smaller light-emitting surface than the top surface of the chip. | 08-01-2013 |
20130188381 | SEMICONDUCTOR LIGHT-EMITTING DEVICE, MANUFACTURING METHOD FOR THE SAME AND VEHICLE HEADLIGHT - A semiconductor light-emitting device, a method for manufacturing the same and a vehicle headlight can include the light-emitting device, which is composed of a light-emitting structure including a transparent plate, at least one semiconductor light-emitting chip and a wavelength converting layer between the transparent plate and the light-emitting chip to emit various colored lights including white light. The light-emitting device can also include a mounting board mounting the light-emitting structure and a frame thereon, a reflective material disposed between the frame and the light-emitting structure and the transparent material located on the reflective material to prevent an occurrence of oil-bleeding phenomenon. Thus, the disclosed subject matter can provide the light-emitting device having a high reliability for the vehicle headlight and the like, which can be maintained at a high quality even when they have been used for a long time under harsh conditions, and methods of manufacturing such devices. | 07-25-2013 |
20130188380 | VEHICLE LIGHTING UNIT - A vehicle lighting unit is capable of improving the design freedom (such as that for forming a high-beam light distribution pattern) and to allow an observer to visually recognize the employed projection lens even when including a plurality of lens portions (including a plurality of rear-side focal points) as a single lens with high aesthetic feature. | 07-25-2013 |
20130188377 | VEHICLE LIGHTING UNIT AND LIGHT GUIDE LENS - A vehicle lighting unit serving as a vehicle headlight can form a light distribution pattern optimized according to the country or the area with a smaller number of parts when compared with the conventional vehicle headlights of this type. Further, there can be provided a light guide lens for use in such a vehicle lighting unit. | 07-25-2013 |
20130188376 | VEHICLE LIGHTING UNIT - A vehicle lighting unit can form a structure or mechanism for positioning and installing a light emitting device in a vehicle lighting unit main body. | 07-25-2013 |
20130187168 | GaN-CONTAINING SEMICONDUCTOR LIGHT EMITTING DEVICE - A GaN-containing semiconductor light emitting device includes: an n-type semiconductor layer formed of GaN-containing semiconductor, an active layer formed on the n-type semiconductor layer, formed of GaN-containing semiconductor, and having a multiple quantum well structure including a plurality of barrier layers and well layers stacked alternately, and a p-type semiconductor layer formed on the active layer and formed of GaN-containing semiconductor, wherein: the barrier layers comprise: a first barrier layer disposed nearest to the n-type semiconductor layer among the barrier layers and formed of a GaN/AlGaN layer, and second barrier layers disposed nearer to the p-type semiconductor layer than the first barrier layer and including an InGaN/GaN layer which has a layered structure of a InGaN sublayer and a GaN sublayer; and the well layers are each formed of an InGaN layer having a narrower band gap than that in the InGaN sublayer. | 07-25-2013 |
20130182206 | LIQUID CRYSTAL DISPLAY - A liquid crystal display includes: first and second substrates placed opposite each other; first and second electrodes each provided on one face of the first and second electrodes extending in first and second directions intersecting with each other; and a liquid crystal layer provided between the one face of the first substrate and the one face of the second substrate. A pixel is formed in a region where the first and second electrodes intersect, and a pixel edge of the pixel has a line segment which is oblique relative to the first direction. The first and second substrates are respectively subject to alignment treatment, and the liquid crystal layer is a substantial vertical alignment having a twisted structure, and an alignment direction of liquid crystal molecules at a substantial center in a layer thickness direction and the oblique line segment are not orthogonal. | 07-18-2013 |
20130169908 | LIQUID CRYSTAL DISPLAY DEVICE AND PROCESS FOR PRODUCING THE SAME - A liquid crystal display comprising: a vertically aligned liquid crystal layer located between a first and a second substrate, a first and a second polarizing layer, and an optical compensation plate having negative biaxial optical anisotropy; wherein at least either the first or the second substrate has protrusions having approximately the same first height and protruding into the liquid crystal layer, the protrusions being formed only inside of the sealing material, the liquid crystal layer in the protrusion-free position having a second height, and the area of the region in which the thickness of the liquid crystal layer is equal to the value obtained by subtracting the first height from the second height as a result of the existence of the protrusions accounting for a %, which belongs to 5% to 50%, of the area of the region where the liquid crystal layer exists on the substrate with protrusions. | 07-04-2013 |
20130161682 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT - There is provided a semiconductor light-emitting element which has an electrode structural body including a connection electrode and a wiring electrode connected to the connection electrode, the wiring electrode stretching along a surface of a semiconductor layered body while being in partial contact with the surface of the semiconductor layered body exposed from an opening formed on the insulation layer. The area of a contact region between the wiring electrode and the semiconductor layered body increases, from a connection end which is connected to the connection electrode, along a direction in which the wiring electrode stretches. | 06-27-2013 |
20130153951 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - A semiconductor light-emitting device includes a lamination of semiconductor layers including a first layer of a first conductivity type, an active layer, and a second layer of a second conductivity type; a transparent conductive film formed on a principal surface of the lamination and having an opening; a pad electrode formed on part the opening; and a wiring electrode connected with the pad electrode, formed on another part of the opening while partially overlapping the transparent conductive film; wherein contact resistance between the transparent conductive film and the lamination is larger than contact resistance between the wiring electrode and the lamination. Field concentration at the wiring electrode upon application of high voltage is mitigated by the overlapping transparent conductive film. | 06-20-2013 |
20130146917 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes: a semiconductor lamination including a first semiconductor layer of a first conductivity type, an active layer formed on the first semiconductor layer, and a second semiconductor layer of a second conductivity type formed on the active layer; a rhodium (Rh) layer formed on one surface of the semiconductor lamination; a light reflecting layer containing Ag, formed on the Rh layer and having an area smaller than the Rh layer; and a cap layer covering the light reflecting layer. Migration of Ag is suppressed. | 06-13-2013 |
20130135885 | VEHICLE LIGHT - A vehicle light is capable of preventing gaps (areas darker than peripheral areas) from being formed in between a plurality of illumination areas that are independently controlled to be illuminated with light or not to be illuminated with light, or suppressing the generation of such gaps. The vehicle light can include a projection lens and a light source unit disposed behind the rear-side focal plane of the projection lens. The light source unit can include a plurality of tubular portions each having a reflective inner peripheral surface, and a plurality of semiconductor light emitting elements. Exit openings of the plurality of tubular portions can be arranged side by side in a substantial horizontal direction behind the rear-side focal plane of the projection lens. Adjacent ones of the plurality of exit openings of the tubular portions can be defined and partitioned by a common vertical edge. | 05-30-2013 |
20130128584 | LASER LIGHT SOURCE DEVICE - In an exemplary embodiment, a laser light source device includes a laser light source that emits laser light from a laser emission aperture. The laser light source device also includes a condenser lens disposed in front of the laser light source in a laser emission direction to collect the laser light. The laser light source device also includes a fluorescent member disposed in front of the condenser lens in the laser emission direction to receive the laser light collected by the condenser lens and to emit light of a different wavelength from that of the laser light. The laser light source device also includes a light guide that forms a light path of laser light from the laser light source to the condenser lens. | 05-23-2013 |
20130126926 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME - A semiconductor light emitting device which has a wavelength converting part on a semiconductor film and can eliminate unevenness in emission color without a reduction in light output. The semiconductor film includes a light emitting layer. The support substrate is bonded to the semiconductor film via a light-reflecting layer and has a support surface supporting the semiconductor film and edges located further out than the side surfaces of the semiconductor film. The light-shielding part covers the side surfaces of the semiconductor film and part of the support surface around the semiconductor film in plan view. The wavelength converting part contains a fluorescent substance and is provided over the support substrate to bury the semiconductor film and the light-shielding part therein. The wavelength converting part has a curved surface shape in which its thickness increases when going from the edges toward the center of the semiconductor film. | 05-23-2013 |
20130126925 | SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING DEVICE - A semiconductor light-emitting device, and a method for manufacturing the semiconductor light-emitting device, in which light propagating through a light-emitting layer and reaching an edge surface of a semiconductor film can be extracted to the exterior in an efficient manner. The semiconductor light-emitting device comprises a semiconductor film including a light-emitting layer made from a group III nitride semiconductor. The semiconductor film has a tapered edge surface inclined diagonally with respect to a light extraction surface. The light extraction surface has a relief structure comprising a plurality of protrusions having a shape originating from the crystal structure of the semiconductor film. The average size of the protrusions in a first region in the vicinity of an edge section of the light extraction surface is smaller than the average size of the protrusions in a second region. | 05-23-2013 |
20130121012 | VEHICLE HEADLIGHT - A vehicle headlight can facilitate an earlier awareness with peripheral vision under dark environment (such as during nighttime, tunnel, or adverse weather driving). The light source can include a plurality of white LEDs. The plurality of white LEDs include a first white LED and a second white LED. The first white LED has an S/P ratio, which is represented by (S(λ)*V′(λ))/(S(λ)*V(λ)) in which S(λ) is a spectrum of the first light source, V′(λ) is a relative luminosity factor in scotopic vision, and V(λ) is a relative luminosity factor in photopic vision, lower than that of the second white LED. | 05-16-2013 |
20130114283 | VEHICLE HEADLIGHT - Light emitted from a light source having an S/P ratio being 2.0 or more is projected to a peripheral area in front of a vehicle body, and thereby an earlier awareness with the peripheral vision under dark environment (e.g., during nighttime driving) can be facilitated. | 05-09-2013 |
20130100692 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND VEHICLE LAMP - A semiconductor light emitting device which produces mixed light of a desired emission color by a combination of a semiconductor light emitting element and a wavelength converting layer containing a fluorescent substance, and a vehicle lamp including the semiconductor light emitting device. The wavelength converting layer has different wavelength conversion characteristics respectively at its portion covering an area of relatively high current density at light emission operation of the semiconductor light emitting element and at its portion covering an area of relatively low current density so as to reduce chromaticity difference over the light extraction surface of the mixed light due to non-uniformity of current density in the light emitting layer at light emission operation. | 04-25-2013 |
20130094235 | VEHICLE LIGHTING UNIT - A vehicle lighting unit can reduce the load applied to the actuator for driving a reflecting member as well as can improve the durability of the actuator. The vehicle lighting unit can include a light source, a reflecting member configured to reflect light from the light source toward an illumination area, an actuator including inner piezoelectric actuators and outer piezoelectric actuators configured to cause the reflecting member to swing (turn) around X and Y axes simultaneously, to thereby scan the illumination area with the reflected light from the reflecting member horizontally and vertically, and a controller configured to control the inner piezoelectric actuators and the outer piezoelectric actuators such that a scanning frequency in the vertical direction of the reflected light is larger than a scanning frequency in the horizontal direction of the reflected light. | 04-18-2013 |
20130084661 | METHOD FOR MANUFACTURING OPTICAL DEFLECTOR FOR FORMING DICING STREET WITH DOUBLE ETCHING - A wafer-level optical deflector assembly is formed on a front surface side of a wafer. Then, the front surface side of the wafer is etched by using elements of the wafer-level optical deflector assembly, to form a front-side dicing street. Then, a transparent substrate with an inside cavity is adhered to the front surface side of the wafer. Then, a second etching mask is formed on a back surface side of the wafer. Then, the back surface side of the wafer is etched to create a back-side dicing street. Then, an adhesive sheet with a ring-shaped rim is adhered to the back surface side of the wafer. Then, the transparent substrate is removed. Finally, the ring-shaped rim is expanded to widen the front-side dicing street and the back-side dicing street to pick up optical deflectors one by one from the wafer. | 04-04-2013 |
20130083551 | INNER LENS FOR VEHICLE LIGHT AND VEHICLE LIGHT INCLUDING THE SAME - An inner lens for use in a vehicle light can be configured to sufficiently enhance aesthetic features, decorative features, unpredictable features, etc., without adversely affecting the formation of the main light distribution. The inner lens can include a main body portion having a main surface that faces towards the reflecting surface of the reflector, and a plurality of independent convex projections formed on the main surface of the main body portion at an area corresponding to the reflecting surface. The light emitted from the light source and that reaches the projections can enter the projections and the main body portion and then be reflected and/or refracted by the projections and the main body portion so as to be directed to a direction diagonally forward of the vehicle light as light that does not contribute to the formation of the main light distribution. | 04-04-2013 |
20130083381 | OPTICAL DEFLECTOR APPARATUS INCLUDING OPTICAL DEFLECTOR CHIP SANDWICHED BY TWO SUBSTRATES - In an optical deflector apparatus, an optical deflector chip includes a mirror, an actuator adapted to rock the mirror, and first pads on a front surface of the optical deflector chip and connected to the actuator. A first substrate includes second pads on a back surface of the first substrate, and an opening is formed in the first substrate. The front surface of the optical deflector chip is adhered to the back surface of the first substrate in such a way that the first pads of the optical deflector chip are in contact with respective ones of the second pads of the first substrate and the mirror opposes the opening. A back surface of said optical deflector chip is adhered to a front surface of a second substrate. | 04-04-2013 |
20130056757 | LED ARRAY CAPABLE OF REDUCING UNEVEN BRIGHTNESS DISTRIBUTION - A light emitting element in use for an LED array comprises an electrode layer, a semiconductor light emitting layer consisting of a p-type semiconductor layer, an active layer and an n-type semiconductor layer, a first wiring layer formed along and in parallel to one side of the semiconductor light emitting layer, and a plurality of second wiring layers extending from the first wiring layer to the semiconductor light emitting layer and electrically connected to the n-type semiconductor layer on a surface of the semiconductor light emitting layer, wherein a plane shape of the semiconductor light emitting layer comprises two short sides including a portion inclined from a line perpendicular to a upper and a lower sides, and a vertical line from a vertex where the upper side and the short side meet crosses the lower side of the adjacent light emitting element. | 03-07-2013 |
20130038943 | OPTICAL DEVICE - To realize a memory effect in an optical device using the electro wetting effect. An optical device includes: first and second substrates placed opposite each other; a partition provided therebetween; a first electrode provided on one side of the first substrate, at least a part thereof overlapping with a region surrounded by the partition in a plan view; second and third electrodes provided on one side of the second substrate and which are respectively placed opposite the first electrode across the region surrounded by the partition; a smoothing layer provided on one side of the second substrate and which covers the second and third electrodes; and first and second fluid, which are incompatible, disposed in the region surrounded by the partition. The first fluid is made of a liquid body possessing polarity or conductivity, and the second fluid is made of a liquid body containing a liquid-crystalline material. | 02-14-2013 |
20130021569 | LIQUID CRYSTAL DISPLAY - To improve the display uniformity in a vertical alignment liquid crystal display. A liquid crystal display includes: first and second substrates; first and second electrodes provided the substrates, respectively; first and second vertical alignment films provided on the substrates respectively; a plurality of columnar spacers disposed at least in a region where the first and second electrodes are superimposed, and provided between the first and second substrates; and a liquid crystal layer provided between the first and second substrates. The first vertical alignment film is subject to an alignment treatment in one direction. The liquid crystal layer has a pretilt angle during non-application of voltage. Each columnar spacer has a profile, in a planar view, which is not orthogonal to and which is not parallel with an alignment direction of liquid crystal molecules at substantially center of the liquid crystal layer in a layer thickness direction. | 01-24-2013 |
20130020552 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT - A semiconductor light-emitting element includes a support substrate, a semiconductor film including a light-emitting layer provided on the support substrate, a surface electrode provided on a light-extraction-surface-side surface of the semiconductor film, and a light-reflecting layer provided between the support substrate and the semiconductor film, forming a light-reflecting surface. The surface electrode includes a first electrode piece and a second electrode piece. The light-reflecting layer includes a reflection electrode including a third electrode piece and a fourth electrode piece. The first electrode piece and the third electrode piece are arranged so as to not overlap when projected onto a projection surface parallel to a principal surface of the semiconductor film, and the shortest distance between the first electrode piece and the fourth electrode piece, is greater than the shortest distance between the first electrode piece and the third electrode piece. | 01-24-2013 |
20120327677 | LAMP BODY AND VEHICLE LAMP BODY UNIT - In a lamp body, a second reflective surface, which reflects light reflected from a first reflective surface to a front side again so as to emit the light toward the front side, is formed on a back surface of a lens main body; fixing portions protrude outward from an outer peripheral portion of the lens main body and are fixed to a seating section; the first reflective surface is formed in a shape of a band which extends in one direction and of which both end portions reach the outer peripheral portion of the lens main body; constricted portions, which are recessed inward, are formed at the outer peripheral portion of the lens main body near at least one of the both end portions of the first reflective surface; and the fixing portions are disposed in the constricted portions. | 12-27-2012 |
20120306410 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND FLASH-LIGHT DEVICE - There is provided a light-emitting element which includes a first semiconductor layer, a second semiconductor layer having an electrical conductivity that is different from that of the first semiconductor layer and an active layer disposed between the first and second layers, and a first and second electrodes respectively disposed on surfaces of the first and second semiconductor layers. The first electrode comprises a plurality of electrode pieces separated from each other; and each of the electrode pieces comprises a power feed pad, and an extended portion connected to the pad and that extends in a direction away from the pad, and a terminal end portion of the extended portion of an electrode piece is opposed to a terminal end portion of the extended portion of the other electrode piece across a gap. | 12-06-2012 |
20120244683 | MANUFACTURING METHOD OF SEMICONDUCTOR ELEMENT - A manufacturing method of a semiconductor element comprises the steps of (a) preparing a growth substrate, (b) forming a semiconductor layer on the growth substrate, (c) dividing the semiconductor layer into a plurality of elements while leaving at least a part of the semiconductor layer between each element to form a sacrificial layer around each element, (d) forming a metal layer on the semiconductor layer, (e) bonding a supporting substrate to the semiconductor layer via the metal layer, and (f) removing the growth substrate from the semiconductor layer by irradiating a laser whose area of irradiation covers each element within an outline of the sacrificial layer of each element. | 09-27-2012 |
20120243203 | VEHICLE LIGHT - A vehicle light which uses a laser light source device and has a shorter dimension in an optical axis direction than conventional vehicle lights. The vehicle light comprises a laser light source device and an optical system configured so as to form a predetermined light distribution pattern. The laser light source device includes: a cylindrical light-guiding part having a diffusing surface set in a region other than a light-introducing surface; a phosphor arranged in a light-emitting region on an outer circumferential surface of the light-guiding part; a reflective film arranged in a region of the light-guiding part other than the light-introducing surface and the light-emitting region; and a laser light source that outputs a laser beam which is introduced into the light-guiding part from the light-introducing surface and enters the phosphor. The light-guiding part and the laser light source are arranged adjacent to each other. | 09-27-2012 |
20120243065 | TWO-DIMENSIONAL OPTICAL DEFLECTOR APPARATUS USING CURVED-TYPE SAW-TOOTH DRIVE VOLTAGES - In a two-dimensional optical deflector apparatus comprising an optical deflector and a driver for driving the optical deflector, the optical deflector includes a mirror, a first piezoelectric actuator for rocking the mirror with respect to a first axis of the mirror, and a second piezoelectric actuator of a meander type for rocking the mirror with respect to a second axis of the mirror perpendicular to the first axis. The driver generates a curved-type saw-tooth drive voltage and applies the curved-type saw-tooth drive voltage to the second piezoelectric actuator. | 09-27-2012 |
20120242191 | DRIVER FOR OPTICAL DEFLECTOR USING TWO MODIFIED SYNCRONOUS SAW-TOOTH DRIVE VOLTAGES AND METHOD FOR SETTING THE SAME - In an optical deflector including a mirror, a movable frame supporting the mirror, a support body surrounding the movable frame, and a first group of piezoelectric actuators and a second group of piezoelectric actuators alternating with the first group of piezoelectric actuators, a driver combines first and second original saw-tooth waves having the same waveform into first saw-tooth waves, and applies a first drive voltage having the first saw-tooth waves to the first group of piezoelectric actuators. The driver applies a second drive voltage having second saw-tooth waves opposite in phase with the first saw-tooth waves to the second group of piezoelectric actuators. | 09-27-2012 |
20120241805 | SEMICONDUCTOR LIGHT EMITTING ELEMENT AND MANUFACTURING METHOD THEREOF - A manufacturing method of a semiconductor light emitting element, includes forming sacrifice portions within the width of street portions in a semiconductor laminated body, and performing wet etching to remove the sacrifice portions together with their neighboring portions, thereby removing etching residuals in the streets. | 09-27-2012 |
20120231608 | PRODUCTION PROCESS FOR SEMICONDUCTOR DEVICE - (a) Forming on a growth substrate a void-containing layer that is made of a group III nitride compound semiconductor and contains voids. (b) Forming on the void-containing layer an n-type layer that is made of an n-type group III nitride compound semiconductor and serves to close the voids. (c) Forming on the n-type layer an active layer made of a group III nitride compound semiconductor. (d) Forming on the active layer a p-type layer made of a p-type group III nitride compound semiconductor. (e) Bonding a support substrate above the p-type layer. (f) Peeling off the growth substrate at the boundary where the void are produced. (g) Planarizing the n-type layer. Step (b) comprises (b1) forming part of the n-type layer under conditions where horizontal growth is relatively weak and (b2) forming the remaining part of the n-type layer under conditions where horizontal growth is relatively strong. | 09-13-2012 |
20120231568 | SEMICONDUCTOR DEVICE PRODUCTION PROCESS - (a) On a growth substrate, a void-containing layer that is made of a group III nitride compound semiconductor and contains voids is formed. (b) On the void-containing layer, an n-type layer that is made of an n-type group III nitride compound semiconductor and serves to close the voids is formed. (c) On the n-type layer, an active layer made of a group III nitride compound semiconductor is formed. (d) On the active layer, a p-type layer made of a p-type group III nitride compound semiconductor is formed. (e) A support substrate is bonded above the p-type layer. (f) The growth substrate is peeled off at the boundary where the voids are produced. In the above step (a) or (b), the supply of at least part of the materials that form the layer is decreased, while heating, before the voids are closed. | 09-13-2012 |
20120228670 | OPTICAL SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD OF THE SAME - An optical semiconductor element and a manufacturing method thereof that can improve the light extraction efficiency with maintaining the yield. The manufacturing method includes forming a plurality of recesses arranged at equal intervals along a crystal axis of a semiconductor film in a surface of the semiconductor film; and performing an etching process on the surface of the semiconductor film, thereby forming a plurality of protrusions arranged according to the arrangement form of the plurality of recesses and deriving from the crystal structure of the semiconductor film in the surface of the semiconductor film. | 09-13-2012 |
20120228658 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING ELEMENT - There is provided a light-emitting element having a semiconductor film which includes a p-type current-spreading layer of GaInP or GaP; a first p-clad of AlInP; a second p-clad of AlGaInP; an active layer including of GaInP or AlGaInP; a first n-clad having a carrier density of 1×10 | 09-13-2012 |
20120226412 | HEADLIGHT CONTROL APPARATUS FOR VEHICLES, AND HEADLIGHT SYSTEM FOR VEHICLES - In controlling a vehicle headlight that has the ADB (Adaptive Driving Beam) function, low beams and high beams are appropriately controlled even when a vehicle ahead is making a turn. A vehicle headlight control device detects a turning motion in accordance with a change in an open angle of the vehicle ahead that can be obtained by monitoring lights of the vehicle ahead, and controls the headlight such that, before switched to high beams, the headlights continue a low-beam illumination for a prescribed delay time with respect to an area where the turning motion was detected immediately before the vehicle ahead went to a non-detected state. The vehicle headlight control device may be configured to determine the delay time based on an own vehicle speed and an open angle immediately before occurrence of the non-detected state. | 09-06-2012 |
20120224378 | WAVELENGTH CONVERTING MEMBER AND LIGHT SOURCE DEVICE - A wavelength converting member radiates light having a wavelength different from that of laser light introduced into the wavelength converting member. The wavelength converting member has a phosphor layer that contains a phosphor therein. The phosphor layer has a laser light incidence surface capable of receiving the laser light. The wavelength converting member also has a high-refractive layer that is bonded to an opposite surface of the phosphor layer to the laser light incidence surface thereof. A refractive index of the high-refractive layer is higher than a refractive index of the phosphor layer. The high-refractive layer has concaves on at least either the bonding surface where the high-refractive layer is bonded to the phosphor layer or a light extraction surface that is opposite the bonding surface. | 09-06-2012 |
20120224240 | DRIVER FOR OPTICAL DEFLECTOR USING COMPLEX-SINUSOIDAL-WAVE DRIVE VOLTAGES AND METHOD FOR SETTING THE SAME - A driver for driving an optical deflector includes a mirror, a movable frame for supporting the mirror, a support body surrounding the movable frame, and a first group of piezoelectric actuators and a second group of piezoelectric actuators alternating with the first group of piezoelectric actuators. A first drive voltage for the first group of piezoelectric actuators has first repeated waves each with a first rising period. A second drive voltage for the second group of piezoelectric actuators has second repeated waves each with a second falling period corresponding to the first rising period of the first drive voltage and a second rising period corresponding to the first falling period of the first drive voltage. Frequencies of the first and second repeated waves exclude natural frequencies of a mechanically-vibrating system of the mirror with respect to the axis thereof depending upon the piezoelectric actuators. | 09-06-2012 |
20120224239 | DRIVER FOR OPTICAL DEFLECTOR USING TWO ASYNCRONOUS SAW-TOOTH DRIVE VOLTAGES AND METHOD FOR SETTING THE SAME - An optical deflector includes a mirror, a movable frame for supporting the mirror, a support body surrounding the movable frame, and a first group of piezoelectric actuators and a second group of piezoelectric actuators alternating with the first group of piezoelectric actuators. A driver applies a first drive voltage having first saw-tooth waves to the first group of piezoelectric actuators, and applies a second drive voltage having second saw-tooth waves opposite in phase with the first saw-tooth waves to the second group of piezoelectric actuators. A difference in phase between the first and second saw-tooth waves is a predetermined value to suppress resonation of harmonic components of the drive voltages with a natural frequency of a mechanically-vibrating system of the mirror with respect to the axis thereof depending upon the piezoelectric actuators. | 09-06-2012 |
20120220060 | METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING APPARATUS - There is provided a method for manufacturing a light-emitting element comprising a semiconductor layered structure of Group III-V compound semiconductor layers; the manufacturing method including a step of forming a projection/depression structure on a light extraction surface of the semiconductor layered structure using as an etchant an aqueous solution containing hydrobromic acid. | 08-30-2012 |
20120218615 | LIGHT SCATTERING ELEMENT, OPTICAL SCANNING DEVICE, AND IMAGE DISPLAYING DEVICE - A light scattering element | 08-30-2012 |
20120217847 | PIEZOELECTRIC ACTUATOR INCLUDING DOUBLE PZT PIEZOELECTRIC LAYERS WITH DIFFERENT PERMITIVITIES AND ITS MANUFACTURING METHOD - In a piezoelectric actuator including a lower electrode layer, a first PZT piezoelectric layer having a first specific permittivity is formed on the lower electrode layer, and a second PZT piezoelectric layer having a second specific permittivity smaller than said first specific permittivity is formed on the first PZT piezoelectric layer. | 08-30-2012 |
20120214266 | MANUFACTURING METHOD OF NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENTS - A manufacturing method of nitride semiconductor light emitting elements, which can reliably form a mechanically stable wiring electrode leading from a light emitting element surface. A structure protective sacrifice layer is formed around a first electrode layer on a device structure layer beforehand, and after separation of the device structure layer into respective portions for the light emitting elements, the resultant is stuck to a support substrate. Subsequently, forward tapered grooves reaching the structure protective sacrifice layer are formed, and the inverse tapered portion formed outward of the forward tapered groove is lifted off in a lift-off step. Thus, an insulating layer is formed on the forward tapered side walls of the light emitting element, and a wiring electrode layer electrically connected to the second electrode layer on the principal surface of the light emitting element is formed on the insulating layer. | 08-23-2012 |
20120212108 | PIEZOELECTRIC ACTUATOR INCLUDING X-GRADED TiOX ADHESIVE LAYER AND ITS MANUFACTURING METHOD - In a piezoelectric actuator including a substrate, an insulating layer formed on the substrate, an adhesive layer formed on the insulating layer, a Pt lower electrode layer formed on the adhesive layer, and a PZT piezoelectric layer formed on the Pt lower electrode layer, the adhesive layer is made of TiO | 08-23-2012 |
20120205705 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A vertical semiconductor light emitting device which can alleviate a concentration of current inside a semiconductor film without impairing the electrical connection between an ohmic electrode and the semiconductor film. The semiconductor light emitting device includes the semiconductor film in contact with a support; a first electrode for partially covering the surface of the semiconductor film opposite to the contact surface with the support; and a second electrode provided on the contact surface side of the semiconductor film with the support. The second electrode includes first and second transparent electrodes made of the mutually same metal oxide transparent electrical conductor and electrically connected to each other, and the second transparent electrode is located to be opposed to the first electrode with the semiconductor film interposed therebetween and has a higher contact resistance with the semiconductor film than the first transparent electrode does. | 08-16-2012 |
20120168954 | SUBSTRATE BONDING METHOD AND SEMICONDUCTOR DEVICE - A first Sn absorption layer is formed on a principal surface of a first substrate, the first Sn absorption layer being made of metal absorbing Sn from AuSn alloy and lowering a relative proportion of Sn in the AuSn alloy. A second Sn absorption layer is formed on a principal surface of a second substrate, the second Sn absorption layer being made of metal absorbing Sn from AuSn alloy and lowering a relative proportion of Sn in the AuSn alloy. A solder layer made of AuSn alloy is formed at least on one Sn absorption layer of the first and second Sn absorption layers. The first and second substrates are bonded together by melting the solder layer in a state that the first and second substrates are in contact with each other, with the principal surfaces of the first and second substrates facing each other. | 07-05-2012 |
20120146086 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device having an n-electrode and a p-electrode provided on the same surface side of a semiconductor film, wherein current spread in the semiconductor film is promoted, so that the improvements in luminous efficiency and reliability, the emission intensity uniformalization across the surface, and a reduction in the forward voltage, can be achieved. The semiconductor light emitting device includes a semiconductor film including an n-type semiconductor layer, an active layer, and a p-type semiconductor layer; the n-electrode formed on an exposed surface of the n-type semiconductor layer exposed by removing parts of the p-type semiconductor layer, of the active layer, and of the n-type semiconductor layer with accessing from the surface side of the p-type semiconductor layer; and the p-electrode. A current guide portion having conductivity higher than that of the n-type semiconductor layer is provided on or in the n-type semiconductor layer over the p-type electrode. | 06-14-2012 |
20120140325 | DISPLAY DEVICE USING A DIHEDRAL CORNER REFLECTOR ARRAY OPTICAL ELEMENT - A display device includes a dihedral corner reflector array optical element composed of a substrate and a plurality of dihedral corner reflectors arranged regularly on one main surface of the substrate, the dihedral corner reflectors including orthogonal mirror planes perpendicular to each other and being perpendicular to the main surface of the substrate; and an object existing by the one surface of the substrate, the optical element forming a real image of the object by the other main surface of the substrate. The optical element includes a plurality of protrudent bodies integrally formed of a transparent material of the substrate, each of the protrudent bodies including two sides of orthogonal mirror planes perpendicular to each other as the dihedral corner reflector perpendicular to the main surface of the substrate. The optical element is disposed so that the protrudent bodies face toward a space in which the object exists. | 06-07-2012 |
20120140222 | LIGHT SCATTERING TYPE PARTICLE DETECTOR USING SCATTERED LIGHT OF SURFACE PLASMON RESONANCE PHOTONS - A particle detector comprises a light source, and a metal layer having an incident/reflective surface and a photoelectric surface opposing the incident/reflective surface. Incident light from the light source reaches the incident/reflective surface to excite near-field surface plasmon resonance photons at the photoelectronic surface. A particle deposited on the photoelectronic surface of the metal layer changes the near-field surface plasmon resonance photons to far-field scattered light. The particle detector further comprises a unit, provided above the photoelectric surface of the metal layer, for detecting the far-field scattered light. | 06-07-2012 |
20120105786 | LIQUID CRYSTAL DISPLAY - The liquid crystal display device comprises a first and a second substrate placed opposite each other, a first electrode provided on the first substrate extending in a first direction, a second electrode provided on the second substrate extending in a second direction that is orthogonal to the first direction, and a vertically-aligned liquid crystal layer provided between the two substrates. | 05-03-2012 |
20120105782 | LIQUID CRYSTAL DISPLAY ELEMENT - A liquid crystal display element comprises a pair of substrates facing each other with a predetermined gap, strips of first electrodes formed on one substrate, strips of second electrodes formed on another substrate and crossing the first electrodes, an alignment film formed on at least one of the substrates and treated with an alignment process in a direction not perpendicular to a longitudinal direction of the second electrodes, a vertical alignment mode liquid crystal layer placed between the substrates and having a pretilt angle, and a pair of polarizers sandwiching the substrates, wherein the fist and the second electrodes cross each other to form pixels, and non-uniform alignment regions where liquid crystal molecules in a center of a thickness of the liquid crystal layer are aligned in a different direction from the direction defined by the alignment process appear near an edge of each pixel. | 05-03-2012 |
20120091489 | SUBSTRATE FOR MOUNTING LIGHT-EMITTING ELEMENTS, LIGHT-EMITTING DEVICE, AND METHOD FOR MANUFACTURING SAME - A frame body surrounding a perimeter of each light-emitting element is provided one surface of a substrate. Glass films having apertures are formed on the substrate by glass printing to form the frame body. | 04-19-2012 |
20120091480 | LIGHT-EMITTING DEVICE - A light-emitting device includes a substrate, a plurality of light-emitting elements mounted on one surface of the substrate, a first glass film provided to one surface of the substrate and having a plurality of apertures that form a light-reflecting frame surrounding the perimeter of each the light-emitting elements, and a second glass film provided to the other surface of the substrate. A coefficient of thermal expansion of the second glass film is greater than that of the substrate when a coefficient of thermal expansion of the first glass film is greater than that of the substrate, and a coefficient of thermal expansion of the second glass film is less than that of the substrate when a coefficient of thermal expansion of the first glass film is less than that of the substrate. | 04-19-2012 |
20120086894 | LIQUID CRYSTAL DISPLAY ELEMENT - A liquid crystal display element comprises a first and a second substrates, a vertical alignment liquid crystal layer, and a first and a second polarizers arranged to cross approximately their absorption axes and an alignment direction of liquid crystal molecules when no voltage is applied at almost 45 degrees. At least one of the electrodes comprises a polyline extending to an extending direction as a whole and having no straight line in parallel to the extending direction along an electrode edge, and the polyline is formed along an edge of at least one of the first and the second electrodes where the alignment directions when a voltage is applied and when no voltage is applied are opposite to each other if the polyline is a straight line along the extending direction. | 04-12-2012 |
20120086880 | VERTICAL ALIGNMENT TYPE LIQUID CRYSTAL DISPLAY DEVICE WITH VIEWING ANGLE CHARACTERISTICS IMPROVED BY DISPOSING OPTICAL PLATES - First and second polarizers are disposed in cross-Nichol configuration. A liquid crystal cell is disposed between the two polarizers and establishes vertical alignment in a state of no voltage application. An even number of optical films having optical anisotropy and disposed between the liquid crystal cell and first polarizer. A retardation of the liquid crystal cell is in a range between 300 nm and 1500 nm; and each optical film satisfies nx>n≧z, an in-plane retardation is smaller than 300 nm, a thickness direction retardation is in a range between 50 nm and 300 nm, an angle between an in-plane slow axis of the optical film disposed nearest to the first polarizer and an absorption axis of the first polarizer is smaller than 45°, and the slow axes of mutually adjacent optical films are perpendicular to each other. | 04-12-2012 |
20120077298 | NITRIDE SEMICONDUCTOR CRYSTAL WITH SURFACE TEXTURE - A nitride semiconductor light emitting device is formed by: forming a resist pattern on a first nitride semiconductor layer formed on a substrate, the resist pattern having a region whose inclination angle relative to a substrate surface changes smoothly as viewed in a cross section perpendicular to the substrate surface; etching the substrate by using the resist pattern as a mask to transfer the resist pattern to the first nitride semiconductor layer; and forming an light emitting layer on the patterned first nitride semiconductor layer. The nitride semiconductor light emitting device can emit near-white light or have a wavelength range generally equivalent to or near visible light range. | 03-29-2012 |
20120075591 | LIGHT SOURCE UNIT AND PROJECTOR - A light source unit includes an excitation light source and a luminescent wheel on which luminescent light emitting areas including, on a reflecting surface, red and green luminescent materials which respectively emit light of red and green wavelength band, when receiving excitation light, and a diffuse transmission area which diffuses and transmits excitation light, are aligned end to end in a circumferential direction. An excitation light incident surface of a luminescent material layer of the luminescent wheel has a surface with a plurality of projecting bodies. Regular quadrangular pyramids are arranged thereon in a matrix with outer boundaries of bottom portions of adjacent regular quadrangular pyramids contacting each other. The pyramids rise at a rising angle of at least 30°, and a length of one side of an outer boundary of the bottom portion of the pyramid is between 10 and 100 μm. | 03-29-2012 |
20120075561 | LIQUID CRYSTAL DISPLAY - A liquid crystal display includes a first substrate having a first electrode on one surface side, a second substrate having second electrode on one surface side and placed opposite to the first substrate. A liquid crystal layer having a pretilt angle of 89.7° or more and less than 90° is disposed between the first and second electrodes. The first and second electrodes respectively form a pixel in opposing areas. The first electrode includes rectangularly shaped openings disposed with regularity in the pixel in a planar view. The openings include first and second openings with longitudinal directions respectively facing first and second directions, the second direction different from the first direction. The angle formed by the longitudinal directions of the first and second openings, and an alignment direction of liquid crystal molecules at the substantial center of the liquid crystal layer is 0° or more and less than 90°. | 03-29-2012 |
20120075221 | TOUCHSCREEN PANEL INPUT DEVICE MANUFACTURING METHOD, PIEZOELECTRIC ELEMENT AND TOUCHSCREEN PANEL INPUT DEVICE - A touchscreen panel input device is manufactured by forming a first adhesion layer and a second adhesion layer on a growth substrate, removing only the second adhesion layer from a selected region by irradiating laser, forming a growth base layer on the selected region where the second adhesion layer is removed and on the second adhesion layer and an oxide thin film having piezoelectricity on the growth base layer, transferring the oxide thin film layer on the selected region to a second substrate having first transparent electrodes by peeling-off, and adhering the second substrate to a third substrate having second transparent electrodes by placing the transferred oxide thin film layer between them. The touchscreen panel input device detects a pushing pressure in addition to a touch position with proving a tactile feedback. | 03-29-2012 |
20120069278 | LIQUID CYRISTAL DISPLAY ELEMENT - A simple matrix type dot-matrix liquid crystal display element includes a first and a second transparent substrate disposed opposite to each other, first and second transparent electrodes disposed on the opposed face of the first and the second transparent substrate, respectively, a first and a second vertical alignment film disposed on the opposed side of the first and the second transparent substrate to cover the first and the second electrodes, respectively, a liquid crystal layer disposed between the opposed side of the first and the second transparent substrate and having Δ∈<0 and Δnd>450 nm, and a first and a second viewing angle compensation plate disposed on the unopposed side of the first and the second transparent substrate, respectively, wherein in the first transparent electrode, openings extending in a predefined direction are aligned. | 03-22-2012 |
20120063117 | LIGHT SOURCE APPARATUS - Provided is a light source apparatus having a phosphor layer | 03-15-2012 |
20120061715 | SEMICONDUCTOR LIGHT-EMITTING DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR LIGHT-EMITTING DEVICE - There is provided a semiconductor light-emitting device manufacturing method which includes the steps of forming a semiconductor growth film on a growth substrate; forming a metal film on the semiconductor growth film; forming a multilayer insulating film on the metal film, the multilayer insulating film having at least a first insulating layer and a second insulating layer adjacent to each other; and forming a support member on the multilayer insulating film. Pinholes present in the first insulating layer are discontinuous with pinholes present in the second insulating layer at an interface between the first and the second insulating layers. | 03-15-2012 |
20120061642 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor light emitting device which includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer provided between the n-type semiconductor layer and the p-type semiconductor layer. The semiconductor light emitting device comprises a first transparent electrode made of metal oxide transparent conductor provided on a surface of the p-type semiconductor layer; a second transparent electrode made of a metal oxide transparent conductor provided on the surface of the p-type semiconductor layer and electrically connected to the first transparent electrode; and a p-side electrode pad made of metal provided on a surface of the second transparent electrode. The second transparent electrode is higher in contact resistance with the p-type semiconductor layer than the first transparent electrode. | 03-15-2012 |
20120025251 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - A semiconductor light-emitting device includes a reflective electrode on a support; a first cladding layer; a light-emitting layer; a second cladding layer having a terrace structure formed of recesses and protrusions, a light-extracting structure having projections and depressions being formed on top surfaces of the protrusions and bottom surfaces of the recesses; and surface electrodes on the top surfaces of the protrusions. The second cladding layer has a stacked structure, which includes a first current-spreading layer, a first light-extracting layer on the first current-spreading layer and having the light-extracting structure on the bottom surfaces of the recesses, a second current-spreading layer on the first light-extracting layer, and a second light-extracting layer on the second current-spreading layer and having the light-extracting structure on the top surfaces of the protrusions, and the first and second light-extracting layer have lower light absorptance and higher resistance than the first and second current-spreading layer. | 02-02-2012 |
20120008069 | LIQUID CRYSTAL DISPLAY APPARATUS - A liquid crystal display apparatus includes a vertical alignment type liquid crystal cell including a first substrate formed with a first electrode, a second substrate formed with a second electrode, and a liquid crystal layer containing liquid crystal molecules given a pretilt angle. A pair of polarizer plates sandwiches the cell, and a driver device applies a voltage of a multiplex driving waveform across the first and second electrodes. In a display in-plane parallel to a surface of the first or second substrate, at least one of the first and second electrodes has a zigzag border alternately coupling a first border perpendicular to display in-plane components of directors of liquid crystal molecules in a middle area along a thickness direction of the liquid crystal layer in the absence of applied voltage and a second border extending along a direction crossing the first border. | 01-12-2012 |
20110304803 | LIQUID CRYSTAL DISPLAY - A vertical alignment type liquid crystal display, which has a liquid crystal layer whose retardation value is about 600 nm or more, can solve the viewing angle problems associated with the wider viewing angle. The liquid crystal display can include a vertical alignment liquid crystal cell, and first and second polarizing plates cross-Nicol disposed on respective sides of the liquid crystal cell. The liquid crystal cell has a liquid crystal layer with a retardation of about 600 nm or more. A C-plate and an A-plate are provided between the liquid crystal cell and the first polarizing plate, and two C-plates are provided between the liquid crystal cell and the second polarizing plate. | 12-15-2011 |
20110304802 | LIQUID CRYSTAL DISPLAY - A liquid crystal display includes a first substrate including a first electrode, a second substrate including a second electrode, and a liquid crystal layer provided between the first substrate and the second substrate which is controlled to a substantially vertical orientation having a pretilt angle smaller than 90 degrees. The first electrode includes a plurality of rectangular openings extending in a direction substantially perpendicular to the orientation direction of liquid crystal molecules at substantially a center of the liquid crystal layer. A plurality of first areas and a plurality of second areas disposed mutually alternately are set in an effective display area in which the first electrode and the second electrode overlap in a planar view. Relative positions of the openings are mutually unmatched relative to at least a part of the plurality of second areas, and the openings are not formed in the plurality of first areas. | 12-15-2011 |
20110285965 | DISPLAY DEVICE - A display device includes: a wall defining a viewer-side space; an observed object arranged in an object-side space partitioned off the viewer-side space by a portion of the wall; an imaging optical system of real specular image including a semitransparent substrate with a plane of symmetry for defining the viewer-side space and the object-side space as the portion of the wall to image a real image of the observed object in the viewer-side space with light passing through the substrate; a screen surface having a function of diffuse reflection and provided with the substrate so as to face the viewer-side space; and a projector optical system projecting an image on the screen surface in the viewer-side space. | 11-24-2011 |
20110284897 | SEMICONDUCTOR LIGHT EMITTING DEVICE - The device includes a first ceramic layer; a second ceramic layer on the first ceramic layer and having a light emitting element mounting area; a reflective layer so formed on a surface of the second ceramic layer that the reflective layer covers at least the mounting area; a protective layer which covers the reflective layer; a semiconductor light emitting element mounted on the protective layer positioned above the element mounting area; and at least one heat dissipation via passing through the first ceramic layer. The heat dissipation via is disposed in a position that does not overlap with the element mounting area in a direction in which the ceramic layers are stacked. | 11-24-2011 |
20110278602 | LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - A light emitting device includes a substrate having an element mounting area in a principal surface thereof. The light emitting device also includes at least one light emitting element mounted in the element mounting area of the substrate. The light emitting device also includes a heat transfer member provided on the substrate. The heat transfer member has a thermal conductivity different from thermal conductivity of the substrate so as to form uneven thermal resistance distribution in the element mounting area. Thermal resistance in a heat radiation path through the substrate for release of heat emitted from the light emitting element changes with the mounting position of the light emitting element. | 11-17-2011 |
20110234572 | LIGHT DEFLECTING APPARATUS - A light deflecting apparatus includes first and second light deflecting liquid crystal cells, each corresponding to each eye of a user and each comprising a liquid crystal layer including liquid crystal molecules with positive dielectric anisotropy and exhibiting a cholesteric blue phase when no voltage is applied, a pair of transparent substrates sandwiching the liquid crystal layer, a pair of transparent electrodes each being formed above each transparent substrate, a prism layer formed above one of the transparent substrates, and a driving device switching between a first state wherein the first and the second light deflecting liquid crystal cells are respectively in a homeotropic phase and a cholesteric blue phase, and a second state wherein the first and the second light deflecting liquid crystal cells are respectively in a cholesteric blue phase and a homeotropic phase. | 09-29-2011 |
20110233516 | OPTICAL SEMICONDUCTOR DEVICE INCLUDING PROTRUSION STRUCTURE OF PARALLELOGRAM CELLS AND ITS MANUFACTURING METHOD - In an optical semiconductor device including a support body, semiconductor layers made of (Al | 09-29-2011 |
20110227038 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND A PRODUCTION METHOD THEREOF - A semiconductor light emitting device comprising a semiconductor layer of (Al | 09-22-2011 |
20110217803 | PRODUCTION METHOD FOR SEMICONDUCTOR LIGHT EMITTING DEVICES - Producing a semiconductor film containing a first semiconductor layer, an active layer, and a second semiconductor layer, each represented as Al | 09-08-2011 |
20110201181 | APPARATUS AND METHOD FOR GROWING NITRIDE SEMICONDUCTOR CRYSTAL FILM - An apparatus for growing a nitride semiconductor crystal film, comprises a chamber that can control inside temperature and air pressure, a susceptor supported by a rotating shaft inside the chamber and on which a growth substrate is placed, a reactant gas supplier that emits reactant gas to the growth substrate in parallel to a surface of the growth substrate, a first subflow gas supplier that emits first subflow gas for pressing the reactant gas down to the surface of the growth substrate at an inclination angle of 45 to 90 degrees in a same in-plane direction as the reactant gas, a second subflow gas supplier that emits second subflow gas for removing the reactant gas from an periphery of the growth substrate to the surface at an inclination angle of 45 to 90 degrees, and an exhaust device that exhausts gas from the chamber. | 08-18-2011 |
20110198647 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device which can suppress the self-absorption of light propagating in a semiconductor film without hindering current spread therein. A reflecting film provided between a support substrate and the semiconductor film of the device includes reflecting electrodes that are in ohmic contact with the semiconductor film and that form current paths between the reflecting electrodes and surface electrodes in the semiconductor film. The reflecting electrodes are in contact with the semiconductor film at such positions that the surface electrodes, provided on the light-extraction-surface-side surface of the semiconductor film, are not over the reflecting electrodes along a direction of the thickness of the semiconductor film. The semiconductor film has reflecting-surface-side recesses made in regions containing regions directly under the surface electrodes and recessed toward the light-extraction-surface side, and reflecting-surface-side protrusions provided in regions containing parts of the semiconductor film in contact with the reflecting electrodes and bonded to the support substrate via the reflecting film. | 08-18-2011 |
20110198634 | SEMICONDUCTOR LIGHT-EMITTING APPARATUS AND METHOD OF MANUFACTURING THE SAME - A semiconductor light-emitting apparatus that has high luminous efficiency and a high breakdown voltage as well as reduced breakdown voltage variation among lots. The semiconductor light-emitting apparatus includes a first clad layer and a second clad layer. An average dopant concentration of the second clad layer is lower than that of the first clad layer. The light-emitting apparatus also includes an active layer having an average dopant concentration of 2×10 | 08-18-2011 |
20110193120 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - The device includes a support substrate, a reflective electrode on the support substrate; an AlGaInP-based semiconductor film including a light-emission layer and is provided on the reflective electrode, and a surface electrode provided on the semiconductor film. The surface electrode includes an ohmic electrode constituted by electrode pieces disposed on the semiconductor film in a distributed manner; the reflective electrode is constituted by a line electrode and dot electrodes provided on both sides of each of the electrode pieces, along the electrode pieces; the surface electrode and the reflective electrode are disposed so as to satisfy the following equations: | 08-11-2011 |
20110175105 | SEMICONDUCTOR LIGHT-EMITTING DEVICE AND FABRICATION METHOD THEREOF - A plurality of protrusions is formed on the C-plane substrate with a corundum structure. A base film made of a III-V compound semiconductor including Ga and N is formed on the surface of the substrate. The surface of the base film is flatter than the surface of the substrate. A light emitting structure including Ga and N is disposed on the base film. The protrusions are regularly arranged in a first direction that is tilted by less than 15 degrees with respect to the a-axis of the base film and in a second direction that is orthogonal to the first direction. Each protrusion has two first parallel sides tilted by less than 15 degrees relative to an m-axis and two second parallel sides tilted by less than 15 degrees relative to the a-axis. An interval between the two second sides is wider than an interval between the two first sides. | 07-21-2011 |
20110175057 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - The device including an active layer composed of AlGaInP, and an n-type clad layer and a p-type clad layer disposed so as to sandwich the active layer, the n-type clad layer and the p-type clad layer each having a bandgap greater than the bandgap of the active layer. The n-type clad layer includes a first n-type clad layer composed of AlGaInP and a second n-type clad layer composed of AlInP; and the second n-type clad layer has a thickness in the range from 40 nm to 200 nm. | 07-21-2011 |
20110162495 | METHOD FOR MANUFACTURING IMAGING ELEMENT - Provided is an accurately processed imaging element that can be readily manufactured for saving time and cost. A blade section | 07-07-2011 |
20110157909 | LAMP UNIT - A lamp unit is constructed of light sources, a reflector, a lamp housing that receives the light sources and the reflector therein, and a lamp lens that closes an opening of the lamp housing. The reflector has a through hole that is formed in a portion positioned above a first light source as a heat source, so that air warmed by heat of the first light source can be introduced into a rear side of the reflector via the through hole. The air introduced into the rear side of the reflector via the through hole and ascending therein can be lead by a first guide means to an air stagnating portion positioned in an end periphery of a hermetically-closed space that is defined by the lamp housing and the lamp lens. | 06-30-2011 |
20110104835 | METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENTS - A method of manufacturing semiconductor light emitting elements with improved yield and emission power uses laser lift-off and comprises the steps of forming a semiconductor grown layer formed of a first semiconductor layer, an active layer, and a second semiconductor layer on a first principal surface of a growth substrate; forming a plurality of junction electrodes apart on the second semiconductor layer and forming guide grooves arranged in a lattice to surround each of the junction electrodes in the second semiconductor layer; joining together a support and the semiconductor grown layer via the junction electrodes; projecting a laser to separate the growth substrate; dividing the semiconductor grown layer into respective element regions for the semiconductor light emitting elements; and cutting the support, thereby separating into the semiconductor light emitting elements. Removed regions include regions where the guide grooves are formed, and side walls of the second semiconductor layer formed by the guide grooves have a beveled shape at intersections of the guide grooves. | 05-05-2011 |
20110095330 | OPTICAL SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING OPTICAL SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING OPTICAL SEMICONDUCTOR APPARATUS - A method for manufacturing a high quality optical semiconductor device includes: (a) preparing a growth substrate; (b) forming a semiconductor layer on the growth substrate; (c) forming a metal support made of copper on the semiconductor layer by plating; (d) separating the growth substrate from the semiconductor layer to remove the growth substrate; and (e) carrying out a thermal treatment in order to even density distributions of crystal grains and voids in the copper forming the metal support. | 04-28-2011 |
20110089418 | ZINC OXIDE BASED COMPOUND SEMICONDUCTOR DEVICE - In a ZnO based compound semiconductor device, nitrogen (N) doped (Mg)ZnO:N layer is inserted as a diffusion barrier layer 9 between a ZnO based n-type layer 3 to which n-type dopants are doped and an active layer 4 or a p-type layer 5. The diffusion barrier layer 9 prevents diffusion of the n-type dopants to the active layer 4 or the p-type layer 5. Crystalline quality of the active layer 4 of the ZnO based compound semiconductor device is not deteriorated by the diffusion of the n-type dopants. | 04-21-2011 |
20110084275 | ZnO-CONTAINING SEMICONDUCTOR LAYER AND ZnO-CONTAINING SEMICONDUCTOR LIGHT EMITTING DEVICE - A ZnO-containing semiconductor layer contains Se added to ZnO and has an emission peak wavelength of ultraviolet light and an emission peak wavelength of visual light. By combining the ZnO-containing semiconductor layer with phosphor or a semiconductor which is excited by the emitted ultraviolet light and emits visual light, visual light at various wavelengths can be emitted. | 04-14-2011 |