SANYO Semiconductor Co., Ltd. Patent applications |
Patent application number | Title | Published |
20140027894 | RESIN MOLDED SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - This invention is directed to provide a method of manufacturing a resin molded semiconductor device with high reliability by preventing a resin leakage portion from occurring due to burrs on a lead frame formed by punching. The method of manufacturing the resin molded semiconductor device according to the invention includes bonding a semiconductor die on an island in a lead frame, electrically connecting the semiconductor die with the lead frame, resin-molding the lead frame on which the semiconductor die is bonded, and applying prior to the resin-molding a compressive pressure that is higher than a clamping pressure applied in the resin-molding to a region of the lead frame being clamped by molds in the resin-molding of the lead frame. | 01-30-2014 |
20120007655 | INPUT/OUTPUT CIRCUIT - In some embodiments, an input/output (I/O) circuit sends and receives a high-level signal and a low-level signal via a coupling capacitance provided on a communication line. The I/O circuit includes a receiving portion including a first detection circuit arranged to detect one of the signals and a second detection circuit arranged to detect the other signal, a transmitting portion including a three-value output circuit configured to output one of signals consisting of a high-level signal, a low-level signal, and a high impedance signal, and a control circuit configured to control the receiving portion and the transmitting portion. The control circuit judges a level of an inputted signal depending on detection results of the first detection circuit and the second detection circuit in a receiving state and controls an output value of the three-value output circuit in a transmitting state. | 01-12-2012 |
20110260311 | RESIN MOLDED SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - This invention is directed to provide a method of manufacturing a resin molded semiconductor device with high reliability by preventing a resin leakage portion from occurring due to burrs on a lead frame formed by punching. The method of manufacturing the resin molded semiconductor device according to the invention includes bonding a semiconductor die on an island in a lead frame, electrically connecting the semiconductor die with the lead frame, resin-molding the lead frame on which the semiconductor die is bonded, and applying prior to the resin-molding a compressive pressure that is higher than a clamping pressure applied in the resin-molding to a region of the lead frame being clamped by molds in the resin-molding of the lead frame. | 10-27-2011 |
20110241025 | LIGHTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A lighting device including a metal substrate to prevent temperature rise of LED chip is offered. The lighting device includes the metal substrate, an anode or cathode electrode of the LED chip disposed on the metal substrate, brazing materials connecting the LED chip and the metal substrate, and a groove formed in the anode or cathode electrode. Forming the groove can prevent an occurrence of a crack in the brazing materials. | 10-06-2011 |
20110193977 | VIBRATION COMPENSATION CIRCUIT AND IMAGING DEVICE INCLUDING THE SAME - The present invention comprises: an analog/digital conversion means for converting vibration detection signals output from a vibration detection element that detects vibrations of an imaging device into digital signals; a gyro filter that obtains the amount of movement of the imaging device based on the vibration detection signals digitalized by the analog/digital conversion means; a rotation control means for generating an amount of rotary drive in a stepping motor based on both the current position and amount of movement of an optical component or an imaging element; and a stepping control means for generating and outputting pulse signals that drive the rotation of the stepping motor in each phase according to the amount of rotary drive, wherein the stepping control means enables pulse-width modulation of the ratio between the periods in which high-level pulse signals and low-level pulse signals are respectively applied to the same phase of the stepping motor. | 08-11-2011 |
20110188316 | SEMICONDUCTOR MEMORY DEVICE - This invention offers a semiconductor memory device, with which a resolution to read-out data is not reduced even at the time of verify and a stable read-out operation is possible even when a power supply voltage is reduced. A read-out circuit is provided with a current-voltage conversion circuit, that converts a cell current into a data voltage, and a sense amplifier that compares the data voltage with a reference voltage. The current-voltage conversion circuit is formed to include a variable load resistor that is connected to the memory cell through a bit line. The variable load resistor is formed to include P channel type MOS transistors that make load resistors and P channel type MOS transistors that constitute a switching circuit. | 08-04-2011 |
20110187935 | Video Information Processing Apparatus and Recording Medium Having Program Recorded Therein - A video-information-processing apparatus comprising: a smoothing unit to smooth input video information of a plurality of pixels and generate smoothed video information; a subtraction unit to calculate a gradation difference between the input and smoothed video information; a mixing unit to mix the input and smoothed video information at a ratio corresponding to the difference and generate mixed video information; a determination unit to determine whether or not a peripheral pixel region, including each pixel in the input video information and pixels located around the pixel, is a low-frequency region not including a gradation change greater than or equal to a predetermined gradation change; and an output-selection unit to output the mixed video information when the determination unit determines that the peripheral pixel region is the low-frequency region and output the input video information when the determination unit determines that the peripheral pixel region is not the low frequency region. | 08-04-2011 |
20110181214 | MOTOR DRIVE CIRCUIT - A motor drive circuit is configured to drive a motor based on first and second position detection signals opposite in phase to each other, the signals having a frequency corresponding to a rotational speed of the motor and indicating a rotational position of the motor. The circuit includes a first level-shift circuit, a second level-shift circuit, a timing detecting circuit, and an output circuit. The first level-shift circuit is configured to shift a level of at least either one of the first and second position detection signals so that a first period, during which a first output signal corresponding to the first position detection signal is higher in level than a second output signal corresponding to the second position detection signal, becomes longer than a second period, during which the second output signal is higher in level than the first output signal. | 07-28-2011 |
20110181211 | DRIVE CONTROL CIRCUIT FOR LINEAR VIBRATION MOTOR - A drive signal generating unit generates a drive signal used to alternately deliver a positive current and a negative current to a coil. The drive signal is such that nonconducting periods are set before and after a positive current conducting period and the nonconducting periods are set before and after a negative current conducting period. A driver unit generates the drive current in response to the drive signal generated by the drive signal generating unit and then supplies the drive current to the coil. The drive signal generating unit sets the width of a nonconducting period such that, after the drive start of the linear vibration motor, the width of a nonconducting period to be set before at least the first conducting period of the drive signal is shorter than the width of a nonconducting period to be set before each conducting period during steady operation of the linear vibration motor. | 07-28-2011 |
20110175449 | POWER SUPPLY CIRCUIT - A power supply circuit generates the internal power supply voltage intVCC from a first power supply capable of supplying a first power supply voltage V | 07-21-2011 |
20110159651 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - The invention provides a method of manufacturing a semiconductor device at low cost in which the gate insulation film having a trench structure is not damaged by arsenic ions when the emitter layer or the like is formed and the insulation breakdown voltage is enhanced. A gate electrode made of polysilicon formed in a trench is thermally oxidized in a high temperature furnace or the like to form a thick polysilicon thermal oxide film on the gate electrode. Impurity ions are then ion-implanted to form an N type semiconductor layer that is to be an emitter layer or the like. At this time, the polysilicon thermal oxide film is formed thicker than the projected range Rp of impurity ions in the silicon oxide film for forming the N type semiconductor layer as the emitter layer or the like by ion implantation. This prevents a gate insulation film between the gate electrode and the N type semiconductor layer from being damaged by the impurity ions. | 06-30-2011 |
20110156631 | MOTOR DRIVE CIRCUIT FOR ROTATING A ROTOR BY SUPPLYING THE CURRENTS TO TWO COILS - When a driver unit is in a high impedance state as viewed from a first coil or a second coil, an induced voltage detector detects the voltage across the first coil or that across the second coil so as to detect an induced voltage occurring in the first coil or the second coil. The induced voltage detector includes a differential amplifier circuit for differentially amplifying an electric potential across the first coil or that across the second coil, and an analog-to-digital converter circuit for converting an analog value outputted from the differential amplifier circuit into a digital value and outputting the converted digital value to a control unit. The control unit generates a drive signal based on an input signal set externally and adjusts the drive signal in accordance with the induced voltage detected by the induced voltage detector so as to set the adjusted drive signal in the driver unit. | 06-30-2011 |
20110156124 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - The invention enhances program performance by increasing a coupling ratio between an N+ type source layer and a floating gate and reduces a memory cell area. Trenches are formed on the both sides of an N+ type source layer. The sidewalls of the trench includes first and second trench sidewalls that are parallel to end surfaces of two element isolation layers, a third trench sidewall that is perpendicular to the STIs, and a fourth trench sidewall that is not parallel to the third trench sidewall. The N+ type source layer is formed so as to extend from the bottom surface of the trench to the fourth trench sidewall, largely overlapping a floating gate, by performing ion-implantation of arsenic ion or the like in a parallel direction to the third trench sidewall and in a perpendicular direction or at an angle to a P type well layer from above the trench having this structure. | 06-30-2011 |
20110150243 | CHARGING CIRCUIT AND AMPLIFIER - A charging circuit comprising:
| 06-23-2011 |
20110150239 | SIGNAL PROCESSING CIRCUIT - A signal processing circuit includes: an AD converter configured to quantize an input signal, whose amplitude changes in accordance with temperature, within a set voltage range and convert the quantized input signal into a digital signal; and a setting circuit configured to set the voltage range so as to be wider when the input signal is greater in amplitude in accordance with the temperature and so as to be narrower when the input signal is smaller in amplitude in accordance with the temperature. | 06-23-2011 |
20110150238 | RECEIVING APPARATUS - A receiving apparatus includes: a local oscillator to output first- and second-local-oscillator signals whose phases are orthogonal to each other; a mixer to output first- and second-intermediate-frequency signals; a first filter to allow a component from a desired signal to pass therethrough, and eliminate a component from an image signal having a frequency symmetrical with that of the desired signal, in the first- and second-intermediate-frequency signals; a second filter to allow a component from the image signal to pass therethrough, and eliminate a component from the desired signal, in the first- and second-intermediate-frequency signals; a comparator to compare levels between output signals of the first and second filters; and a control unit to switch a frequency of the first- and second-local-oscillator signals to a difference frequency between a frequency of the desired signal and the intermediate frequency or a sum frequency thereof, according to a comparison result of the comparator. | 06-23-2011 |
20110148439 | CAPACITANCE DISCRIMINATION CIRCUIT AND TOUCH SWITCH EQUIPPED WITH THE SAME - In some embodiments, a capacitance discrimination circuit includes first and second capacitors, a comparator configured to compare a first voltage of the first capacitor and a second voltage of the second capacitor, a counter circuit configured to perform a count operation based on a comparison result of the comparator, a charge circuit configured to charge the first and second capacitors, and a control circuit configured to control the charge circuit so as to charge either the first capacitor or the second capacitor based on the comparison result of the comparator. The capacitance discrimination of the first and second capacitors is performed based on count values of the counter circuit. The capacitance discrimination circuit preferably includes a discharge circuit to discharge electric charges stored in the first and second capacitors in accordance with a discharge signal from the control circuit. | 06-23-2011 |
20110148340 | Driving circuit of stepping motor - A shift register which receives a transmission clock signal, which is shifted according to the transmission clock signal, and which outputs a gate signal a predetermined time after reset; a reset circuit which outputs a reset signal for resetting the shift register when the reset circuit receives an input of a step signal for driving the stepping motor; and a switching element which receives the gate signal of the shift register and which is switched between a blocked state and a conductive state are provided in a driving circuit of a stepping motor. | 06-23-2011 |
20110138159 | MEMORY CONTROL APPARATUS - A memory control apparatus includes: a plurality of setting output units each configured to output setting information for setting operation of each of a plurality of memory cells; and a plurality of selection units each configured to select operation or stop of the operation of each of the plurality of memory cells in accordance with the setting information. | 06-09-2011 |
20110128657 | SEMICONDUCTOR APPARATUS - A semiconductor apparatus includes: first and second power-supply terminals; an internal circuit connected between the first and second power-supply terminals; and a protection circuit connected in parallel with the internal circuit between the first and second power-supply terminals, the protection circuit including: a series circuit that includes a resistor and a first capacitor, and is connected in parallel with the internal circuit between the first and second power-supply terminals; a first MOS transistor that is connected in parallel with the series circuit, and is controlled according to a voltage at a connection point between the resistor and the first capacitor; and a switch circuit that is connected in parallel with the resistor, is turned on in a delayed manner after a power-supply voltage is applied between the first and second power-supply terminals, and changes the voltage at the connection point so that the first MOS transistor is turned off. | 06-02-2011 |
20110127974 | SWITCHING CONTROL CIRCUIT AND POWER SUPPLY APPARATUS - A switching control circuit includes: a drive circuit configured to turn on/off a transistor according to a duty ratio of a drive signal so as to generate an output voltage of a target level from an input voltage, the transistor configured to be applied with the input voltage at an input electrode thereof; and a drive signal generation circuit configured to change the duty ratio of the drive signal based on a reference voltage and a feedback voltage corresponding to the output voltage, to generate the drive signal having the duty ratio which is changed so that the feedback voltage becomes equal in level to the reference voltage, and which is changed so that the output voltage is reduced with a rise in temperature. | 06-02-2011 |
20110122089 | SIGNAL PROCESSING CIRCUIT FOR ELECTROSTATIC CAPACITY TYPE TOUCH PANEL - This invention offers a signal processing circuit of an electrostatic capacity type touch panel which is capable of switching between a differential input mode and a single input mode and has an extended adjustable range of an offset in the single input mode. The signal processing circuit of this invention includes a first sensor circuit of a differential input type, a second sensor circuit of a single input type, a third and fourth electrostatic capacitors that are variable capacitors for calibration to adjust the offset in an output voltage of the first sensor circuit, and a switching control circuit to control so as to put in operation one of the first and second sensor circuits. The switching control circuit also controls so that the third and fourth electrostatic capacitors for calibration are connected in parallel to each other when the second sensor circuit is put in operation. | 05-26-2011 |
20110121335 | LIGHT EMITTING MODULE AND MANUFACTURING METHOD THEREOF - Provided are a light emitting module and a manufacturing method thereof, the light emitting module having improved heat radiation properties and improved adhesion between a sealing resin for sealing a light emitting element and other members. A light emitting module | 05-26-2011 |
20110109669 | DISPLAY DRIVING CIRCUIT AND DISPLAY DRIVING SYSTEM - A display driving circuit ( | 05-12-2011 |
20110109668 | DISPLAY DRIVING CIRCUIT AND DISPLAY DRIVING SYSTEM - A display driving device ( | 05-12-2011 |
20110109665 | DISPLAY DRIVING CIRCUIT AND DISPLAY DRIVING SYSTEM - A display driving circuit ( | 05-12-2011 |
20110109251 | LIGHT-EMITTING ELEMENT DRIVING CIRCUIT SYSTEM - A light-emitting element driving circuit system is provided in which a plurality of current paths, in each of which a light-emitting element and a switching element which is controlled to be switched ON and OFF for causing light to be emitted from the light-emitting element are connected in series, are placed in parallel to each other, wherein an ON time of each switching element is adjusted based on a light-emission period which is a period in which the light-emitting elements are caused to emit light in a circulating manner, such that a number of switching operations of each switching element is reduced. | 05-12-2011 |
20110109240 | LIGHT-EMITTING ELEMENT DRIVE CIRCUIT SYSTEM, AND ELECTRONIC DEVICE - A light-emitting element drive circuit system for driving a light-emitting element includes a current circuit section that drives the light-emitting element at a preset drive current value, and a current value setting section. The current value setting section sets the drive current value so that the drive current value is changed during a preset transition period from a first current value to a second current value that is not equal to the first current value, and changed during a preset transition period from the second current value to a third current value that is not equal to both the first current value and the second current value. | 05-12-2011 |
20110097860 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - The invention provides a method of manufacturing a semiconductor device having a MOS transistor, a resistor element, etc on one semiconductor substrate, in which the number of masks and the number of manufacturing steps are decreased. In an NMOS formation region, a channel stopper layer is formed in a P type well by a first ion implantation process. Then a punch-through prevention layer is formed in the P type well by a second ion implantation process. On the other hand, in a first high resistor element formation region and a second high resistor element formation region, utilizing the first and second ion implantation processes, a resistor layer is formed in an N type well. | 04-28-2011 |
20110080210 | MICROCOMPUTER - A power consumption of a light-receiving device is reduced while a power consumption of a microcomputer that controls the light-receiving device is reduced as well. The microcomputer is structured to include a drive circuit, a sampling/detection circuit, a timer, a system clock generation circuit, a CPU, a ROM and a RAM. The CPU stops providing the light-receiving device with a power supply by turning off a P channel type MOS transistor with the drive circuit and sets the microcomputer in a standby state for a predetermined period of time. When the microcomputer is released from the standby state, the CPU starts providing the light receiving device with the power supply by turning the P channel type MOS transistor on with the drive circuit. | 04-07-2011 |
20110079880 | SEMICONDUCTOR DEVICE - A serially-connected diode pair made of diodes having a high withstand voltage and a low on-resistance is formed based on a high withstand voltage vertical PNP bipolar transistor process technology. Two of the diode pairs are connected in parallel to form a bridge so that there is formed a high-efficiency full-wave rectifier circuit that is free from a leakage current due to a parasitic transistor. The serially-connected diode pair is formed by connecting a diode composed of a P type semiconductor substrate, that makes an anode, and an N type buried layer, that makes a cathode, and a diode composed of a P+ type conductive layer, that makes an anode, and an N type epitaxial layer, that makes a cathode, in series with an electrode AC | 04-07-2011 |
20110074490 | INPUT/OUTPUT CIRCUIT - In some embodiments, an input/output (I/O) circuit sends and receives a high-level signal and a low-level signal via a coupling capacitance provided on a communication line. The I/O circuit includes a receiving portion including a first detection circuit arranged to detect one of the signals and a second detection circuit arranged to detect the other signal, a transmitting portion including a three-value output circuit configured to output one of signals consisting of a high-level signal, a low-level signal, and a high impedance signal, and a control circuit configured to control the receiving portion and the transmitting portion. The control circuit judges a level of an inputted signal depending on detection results of the first detection circuit and the second detection circuit in a receiving state and controls an output value of the three-value output circuit in a transmitting state. | 03-31-2011 |
20110068732 | DRIVER CIRCUIT - A stepping motor includes two coils. A driver circuit drives the stepping motor by setting dissimilar phases of supply currents to these two coils. One terminal of one coil is connected to ground and another terminal is set to a high impedance state, and an induced voltage generated at that coil is detected as a voltage with respect to ground. Then, in accordance with the state of the detected induced voltage, the magnitude of motor drive current supplied to the two coils is controlled. | 03-24-2011 |
20110062890 | DRIVE CIRCUIT - The invention is directed to testing breakdown voltage characteristics of a plurality of output transistors in a batch in a drive circuit instead of measurement using probe needles. A drive circuit includes output transistors made of high breakdown voltage P-channel type MOS transistors, switching control circuits, output terminals, diodes and a control terminal on a semiconductor die. The diodes are made of high breakdown voltage P-channel type MOS transistors in which the source and gate are connected. The anodes of the diodes are connected to the drains of the corresponding output terminals, respectively. The cathodes of the diodes are commonly connected to the control terminal through a wiring. | 03-17-2011 |
20110043646 | IMAGE STABILIZATION CONTROL CIRCUIT - The accuracy of servo control of a corrective lens in an image stabilization control circuit is prevented from decreasing due to non-linear characteristics of a position-detecting element. A signal representing a component of vibration of an image pickup apparatus is generated based on an angular velocity signal from a vibration-detecting element. A microcomputer corrects the vibration component signal according to a predetermined correction function and generates a target position signal representing a target position of the lens. A position-detection signal based on an output from the position-detecting element is compared with the target position signal, and the position of the lens is servo-controlled. The correction function is set so that the characteristics of variation of the target position signal relative to the target position will be the same as the characteristics of variation of the position-detection signal relative to the actual position of the lens. | 02-24-2011 |
20110033194 | REMOTE CONTROL SIGNAL RECEIVING CIRCUIT - The invention is directed to decreasing the power consumption of a remote control signal receiving circuit. A receiving circuit includes a timing signal generation circuit generating a timing signal, a power supply circuit intermittently operating a light receiving element receiving a remote control signal by supplying power to the light receiving element when the timing signal is at a first level and by halting supplying power to the light receiving element when the timing signal is at a second level, a sampling signal generation circuit generating a sampling signal during the operation of the light receiving element corresponding to the timing signal, a sampling circuit sampling an output signal from the light receiving element corresponding to the sampling signal, and a detection circuit detecting the output signal sent from the light receiving element and sampled by the sampling circuit. | 02-10-2011 |
20110025910 | FRAME RATE CONVERTER AND DISPLAY APPARATUS EQUIPPED THEREWITH - An input unit writes, into a memory unit, frames successively input from the outside. An interpolated frame generating unit reads multiple original frames from the memory unit, generates an interpolated frame between the original frames, and writes the interpolated frame into the memory unit. An output unit retrieves original frames and an interpolated frame from the memory unit and outputs to the outside the frames in the order in which the frames are to be displayed. The input unit, interpolated frame generating unit, and output unit operate in parallel to perform pipeline processing. Operation timing of each of the input unit and the interpolated frame generating unit is determined so that the timing at which the input unit writes an original frame into the memory unit differs from the timing at which the interpolated frame generating unit writes an interpolated frame into the memory unit. | 02-03-2011 |
20110025251 | MOTOR DRIVING DEVICE - A motor-driving device comprising: a switching element to control a current passed through a first coil of a stepping motor including the first and a second coils electromagnetically coupled; a rectifier element to be energized in a ground-side-to-second-coil direction; a coil-current-detection unit to detect a current passed through the first coil; a regeneration-current-detection unit to detect a current passed through the rectifier element; a control unit to turn off the switching element when the current passed through the first coil reaches a predetermined-set current based on a detection result of the coil-current-detection unit; and a negative-current-detection unit to detect whether a negative current greater in absolute value than a predetermined-set value is passed through the rectifier element based on a detection result of the regeneration-current-detection unit, the control unit keeping the switching element off when the negative current is not passed, based on a detection result of the negative-current-detection unit. | 02-03-2011 |
20110025234 | LIGHT-EMITTING-ELEMENT DRIVING CIRCUIT - A light-emitting-element driving circuit is provided which comprises a voltage boosting circuit unit which supplies a boosted voltage to a light-emitting element, a current circuit unit which drives the light-emitting element with a current, a normal feedback loop path through which a voltage of the light-emitting element is input as a feedback voltage to the voltage boosting circuit unit, a backup feedback loop path through which a voltage of the light-emitting element is input as the feedback voltage to the voltage boosting circuit unit, an abnormality detection circuit unit which compares the feedback voltage which is input through the normal feedback loop path to the voltage boosting circuit unit and a predetermined determination voltage, to detect abnormality, and a switching circuit which switches from the normal feedback loop path to the backup feedback loop path when the abnormality detection circuit unit has detected the abnormality. | 02-03-2011 |
20110025225 | Light-Emitting Diode Driver Circuit and Lighting Apparatus - A light-emitting diode driver circuit includes: a first-rectifier circuit to output a first-rectified voltage; a transformer including primary and secondary coils and an auxiliary coil inductively coupled to the primary or secondary coils, the primary coil being applied with the first-rectified voltage; a transistor connected in series to the primary coil; a second-rectifier circuit to output a second-rectified voltage obtained by rectifying a voltage generated in the auxiliary coil; a capacitor to be charged with the second-rectified voltage; and a control circuit to control on and off of the transistor based on a charging voltage of the capacitor so that the charging voltage becomes equal to a predetermined voltage, the secondary coil outputting a voltage that varies with a frequency corresponding to a frequency of the first-rectified voltage and that corresponds to a turns ratio between the primary and secondary coils, as a voltage for driving a light-emitting diode. | 02-03-2011 |
20110024883 | SEMICONDUCTOR DEVICE, SEMICONDUCTOR MODULE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND LEAD FRAME - To provide a semiconductor device and a semiconductor module in which breakage of a semiconductor element due to a pressing force given from the outside is prevented. A semiconductor device according to the present invention has a configuration mainly including an island, a semiconductor element mounted on a front surface of the island, a lead that functions as an external connection terminal, and a sealing resin that covers these components in an integrated manner and mechanically supports them. Further, a through-hole is provided so as to penetrate the sealing resin. A front surface of the sealing resin around the through-hole forms a flat part. The front surface of the sealing resin that overlaps the semiconductor element is depressed inward with respect to the flat part to form a depressed part. | 02-03-2011 |
20110018452 | LIGHT-EMITTING-ELEMENT DRIVING CIRCUIT - There is provided a light-emitting-element driving circuit which comprises a light-emitting circuit unit in which a plurality of current paths in each of which a light-emitting element and a first switching element are connected in series are placed in parallel with each other between a power supply terminal connected to an input power supply and a common terminal, a common circuit unit in which a second switching element and a constant current source which supplies a predetermined current which is defined in advance are connected in series and which is placed between the common terminal and a ground terminal which is grounded, and a plurality of third switching elements each of which is placed between an anode terminal of the respective light-emitting element of the light-emitting circuit unit and ground, wherein a switching control is applied for the first switching elements, the second switching element, and the third switching elements. | 01-27-2011 |
20110013899 | FOCUS CONTROL CIRCUIT FOR ADJUSTING THE FOCUS BY MOVING A LENS - A focus control circuit is installed in an image pickup apparatus including a lens, a driver element for adjusting the position of the lens, and a position detecting element for detecting the position of the lens. An equalizer included in the focus control circuit generates a drive signal used to adjust the position of the lens to a position to be set, based on a difference between the position of the lens identified by the position detecting element and the set position. When an instruction to vary a target position of the lens is received externally, a position setting unit included in the focus control circuit sets sequentially a plurality of positions in a range covering a new target position and a previous target position, to the equalizer before the new target position is reached from the previous target position. | 01-20-2011 |
20110006834 | SEMICONDUCTOR DEVICE AND METHOD OF MONITORING BLOWING OF FUSE IN SEMICONDUCTOR DEVICE - In some embodiments, a semiconductor device includes a fuse having a conductive portion configured to be blown when a current exceeding a rated value flows through the conductive portion, a first monitor wiring configured to monitor blowing of the conductive portion of the fuse, and a second monitor wiring configured to monitor blowing of the conductive portion of the fuse. The first monitor wiring and the second monitor wiring are connected to the conductive portion of the fuse so as to be away from a longitudinal center of the conductive portion. | 01-13-2011 |
20100322612 | FOCUS CONTROL CIRCUIT FOR ADJUSTING THE FOCUS BY MOVING A LENS - A focus control circuit is installed in an image pickup apparatus including a lens, a driver element for adjusting the position of the lens, and a position detecting element for detecting the position of the lens. A feedback equalizer included in the focus control circuit generates a drive signal used to adjust the position of the lens to a target position, based on a difference between the position of the lens identified by the output signal of the position detecting element and the target position of the lens set externally, and controls the driver element. | 12-23-2010 |
20100320985 | DRIVER CIRCUIT - A drive control signal is effectively obtained. An offset control circuit ( | 12-23-2010 |
20100320592 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device in which overall thickness is reduced by suppressing the rising of a metal thin line and connection reliability is enhanced at the joint of metal thin line and other member during resin sealing. A method for manufacturing such semiconductor device is also provided. The semiconductor device ( | 12-23-2010 |
20100320557 | SEMICONDUCTOR DEVICE - Provided is a semiconductor device having an anode of a Si-FRD and a cathode of a Si-SBD which are serially connected. The Si-SBD has a junction capacitance whose amount of accumulable charge is equal to or more than an amount of charge occurring at the time of reverse recovery of the Si-FRD, and has a lower breakdown voltage than the Si-FRD does. | 12-23-2010 |
20100315363 | SIGNAL PROCESSING CIRCUIT FOR ELECTROSTATIC CAPACITY TYPE TOUCH SENSOR - There is offered a signal processing circuit for an electrostatic capacity type touch sensor which can improve the noise tolerance and adjust an offset in the output voltage. The signal processing circuit for the touch sensor is structured to include an alternating current power supply providing an excitation pad with an alternating voltage, an electric charge amplifier generating an output voltage Vout corresponding to a difference between a capacitance of a first capacitor formed between a first touch pad and the excitation pad and a capacitance of a second capacitor formed between a second touch pad and the excitation pad, and an offset adjustment circuit to adjust an offset in the output voltage Vout of the electric charge amplifier. | 12-16-2010 |
20100309165 | SIGNAL PROCESSING CIRCUIT OF ELECTROSTATIC CAPACITY TYPE TOUCH PANEL - There is offered a signal processing circuit of the electrostatic capacity type touch panel which can eliminate duplication of components to reduce a cost of the components. A touch panel | 12-09-2010 |
20100308886 | OFFSET CANCELLING CIRCUIT - When a voltage is applied from outside such that a current flowing in a Hall element is switched, each of a plurality of capacitors is charged with an output voltage of the Hall element in each state. A dummy switching element is connected to a switching element which connects the plurality of capacitors in parallel to each other, the dummy switching element and the switching element being controlled to be switched ON and OFF exclusively with respect to each other. | 12-09-2010 |
20100308801 | OFFSET CANCELLING CIRCUIT - In an offset cancelling circuit of a Hall element, a voltage is applied from four directions and from outside such that a current flowing in the Hall element is switched by 90°, to set a first state through a fourth state, and output voltages of the Hall element in the first state through the fourth state are averaged. | 12-09-2010 |
20100307840 | SIGNAL PROCESSING CIRCUIT FOR ELECTROSTATIC CAPACITOR TYPE TOUCH SENSOR - The invention realizes certainly detecting two or more positions on a touch panel that are touched at the same time. A drive circuit selects one from X lines, and supplies an alternating drive voltage to the selected line. A multiplexer selects a first sense line and a second sense line from Y lines that extend to cross the X lines. A charge amplifier outputs an output voltage corresponding to a difference between a first capacitance between the first sense line and the X line selected by the drive circuit and a second capacitance between the second sense line and the X line selected by the drive circuit. A touch position is then detected based on the output voltage of the charge amplifier. | 12-09-2010 |
20100306439 | DATA CHECK CIRCUIT - A data check circuit comprising: a request signal output circuit configured to output a request signal for requesting occupation of a bus to an arbitration circuit configured to arbitrate the occupation of the bus, when a CPU connected, as a bus master, with the bus for accessing a memory outputs an instruction signal for providing an instruction for starting detection of whether or not data stored in the memory is correct; a data acquisition circuit configured to acquire data stored in the memory through the bus, when the arbitration circuit outputs a permission signal for permitting the occupation of the bus based on the request signal; and a data processing circuit configured to perform processing for detecting whether or not the acquired data is correct, the acquired data acquired by the data acquisition circuit. | 12-02-2010 |
20100305731 | DIGITAL DATA PROCESSING APPARATUS - A digital-data-processing apparatus comprising: an encoding unit to encode inputted digital data to generate encoded data with a predetermined bit rate including frames of first and second data sizes, and allow the encoded data to be sequentially stored in a memory; a frame-number-calculation unit to calculate at least either of the numbers of frames of the first and second data sizes, out of the frames, the number of which is n; and an address-calculation unit to calculate a second address of the memory based on a first address of the memory, the first and second data sizes, and a calculation result of the frame-number-calculation unit, the second address having beginning data stored therein of a frame stored in the memory subsequently to the n frames, the first address having beginning data stored therein indicating beginning of a frame stored in the memory the earliest in time among the n frames. | 12-02-2010 |
20100302698 | OVERCURRENT PROTECTION CIRCUIT AND METHOD OF PROTECTING POWER SUPPLY CIRCUIT - In some embodiments, an overcurrent protection circuit is configured to operate in accordance with operation modes including a first operation mode in which when the power supply circuit is activated, the capacitor is charged until the terminal voltage reaches a first voltage, a second operation mode in which depending on a time period in which a current flowing through an output transistor of the power supply circuit exceeds a predetermined value, the capacitor is charged so that the terminal voltage increases from the first voltage toward a second voltage, and the power supply circuit is shut down when the terminal voltage reaches the second voltage, and a third operation mode in which when the power supply circuit is shut down, the capacitor is discharged until the terminal voltage reaches a third voltage, and the shutdown of the power supply circuit is released when the terminal voltage reaches the third voltage. | 12-02-2010 |
20100301917 | LEVEL SHIFT CIRCUIT - The invention provides a level shift circuit that prevents an offset when the supply voltage changes. A level shift circuit has a differential amplification circuit, a current generation circuit, a capacitor and a holding circuit. An input signal from the optical pickup is inputted to the non-inversion input terminal of the differential amplification circuit. First, by turning on a first switch, a feedback loop is formed by the differential amplification circuit, the current generation circuit and the capacitor to perform a level shift, and the voltage charged in the capacitor is held by the holding circuit. Then by turning off the first switch and turning on a second switch, the voltage held by the holding circuit is applied to the non-inversion input terminal of the differential amplification circuit to perform a level shift. | 12-02-2010 |
20100301411 | SEMICONDUCTOR DEVICE - The invention prevents a source-drain breakdown voltage of a DMOS transistor from decreasing due to dielectric breakdown in a portion of a N type drift layer having high concentration formed in an active region near field oxide film corner portions surrounding an gate width end portion. The field oxide film corner portions are disposed on the outside of the gate width end portion so as to be further away from a P type body layer formed in the gate width end portion by forming the active region wider on the outside of the gate width end portion than in a gate width center portion. By this, the N type drift layer having high concentration near the field oxide film corner portions are disposed further away from the P type body layer without increasing the device area. | 12-02-2010 |
20100289540 | DELAY CIRCUIT - In a delay circuit for inputting square waves, fluctuations in the amount of delay brought about by noise pulses present in input signals are reduced. A switch (SW | 11-18-2010 |
20100289464 | POWER SUPPLY CIRCUIT - A power supply circuit comprises a power transistor, differential amplifier, an I/V converter circuit, and an inverting amplifier, wherein the differential amplifier comprises a first current path in which a first resistor element, a first current mirror transistor, and a first control transistor are connected in series, and a second current path in which a second resistor element, a second current mirror transistor, and a second control transistor are connected in series, and the power supply circuit comprises a phase compensating capacitor element connected in parallel with the inverting amplifier, and a ripple removal rate improving capacitor element which is connected between ground and a connection point between the first resistor element and the first current mirror transistor, or between the ground and a connection point between the second resistor element and the second current mirror transistor. | 11-18-2010 |
20100289444 | DRIVER CIRCUIT - A stepping motor includes two coils and has supply currents to the two coils with different phases so that a rotor is rotated by the two coils. During a period where one coil is in a high impedance state, an induced voltage generated at that coil is detected. An output control circuit controls the magnitude of motor drive current supplied to the two coils in accordance with the detected induced voltage state. Then, prior to entering the high impedance state from the drive state, a short-circuit period is provided for short circuiting both terminals of the coil. | 11-18-2010 |
20100285768 | RECEIVING APPARATUS - A receiving apparatus comprising: a frequency-fluctuation-detection unit to detect a frequency difference between a received and desired signals; a first-undesired-level-detection unit to output as a first-undesired level an amplitude-level-difference between the signals having passed through first-and-second-band-pass filters in the received signals; one or a plurality of second-undesired-level-detection units to output amplitude levels of signals having passed through third-and-fourth-band-pass filters in the received signals as second-and-third-undesired levels, respectively, and output a sum of the second-and-third-undesired levels as a fourth-undesired level; and a determination unit to determine whether an undesired state, where an adjacent-undesired signal is present, occurs according to the fourth-undesired level if an absolute value of the frequency difference is equal to or greater than a predetermined-reference value, and select any one of the first-to-third-undesired levels to be outputted according to at least one of the frequency difference and the fourth-undesired level if determining that the undesired state occurs. | 11-11-2010 |
20100284541 | RECEIVING APPARATUS - A receiving apparatus comprising: a frequency conversion unit configured to convert a received radio frequency signal to an intermediate frequency signal; an automatic gain control unit configured to control an amplitude level of at least either one of the radio frequency signal and the intermediate frequency signal according to a gain control signal; a demodulation unit configured to demodulate an audio signal from the intermediate frequency signal; a correction level output unit configured to output a correction level signal corresponding to a difference between a demodulation unit input level and a predetermined reference level, the demodulation unit input level being an amplitude level of the intermediate frequency signal inputted to the demodulation unit; and an addition unit configured to add the gain control signal and the correction level signal, to be outputted as a signal strength signal indicating received signal strength of the radio frequency signal. | 11-11-2010 |
20100284223 | NONVOLATILE SEMICONDUCTOR MEMORY - The invention decreases the number of writing processes of EEPROM. When a mode change signal is L level, a EEPROM is set to a bank mode. In this case, first and second memory banks are independently accessed by a control signal of a first port and a control signal of a second port, respectively. When the mode change signal is H level, the EEPROM is set to a combine mode. In this case, the first and second memory banks are combined into a 4k-bit memory bank, and accessed by the control signal of the first port. | 11-11-2010 |
20100284159 | CIRCUIT DEVICE - Provided is a circuit device capable of increasing the packaging density and preventing the thermal interference between circuit elements to be incorporated. In a hybrid integrated circuit device, a first circuit board and a second circuit board are fitted into a case member in a way that the first circuit board is overlaid with the second circuit board. A first circuit element is arranged on the upper surface of the first circuit board and a second circuit element is arranged on the upper surface of the second circuit board. Furthermore, inside the case member, provided is a hollow portion that is not filled with a sealing resin. Such a configuration prevents the second circuit element, which is a microcomputer, from operating unstably due to a heat generated in the first circuit element, which is a power transistor, for example. | 11-11-2010 |
20100279482 | Semiconductor Device and Method of Manufacturing the Same - In a semiconductor device according to the present invention, two epitaxial layers are formed on a P type substrate. In the substrate and the epitaxial layers, isolation regions are formed to divide the substrate and the epitaxial layers into a plurality of islands. Each of the isolation regions is formed by connecting first and second P type buried layers with a P type diffusion layer. By disposing the second P type buried layer between the first P type buried layer and the P type diffusion layer, a lateral diffusion width of the first P type buried layer is reduced. By use of this structure, a formation region of the isolation region is reduced in size. | 11-04-2010 |
20100274954 | PROGRAM UPDATE SYSTEM AND ELECTRONIC DEVICE WITH PROGRAM UPDATE FUNCTION - A manufacturing cost of an integrated circuit chip used in a program update system or in an electronic device with program update function is reduced. A first integrated circuit chip has a USB interface circuit, a compression decoder, a CPU and a mask ROM. The first integrated circuit chip is a single chip consolidating a microcomputer with a USB host function and the compression decoder. A second integrated circuit chip has a CPU and an FROM, and serves as a system microcomputer to control the whole system of a car audio. A control program stored in the mask ROM is updated using the FROM incorporated in the second integrated circuit chip. | 10-28-2010 |
20100271700 | METHOD FOR DRIVING PIEZOELECTRIC ACTUATOR, PIEZOELECTRIC-ACTUATOR CONTROL CIRCUIT, AND IMAGE-STABILIZATION CONTROL CIRCUIT - Abnormal noise generated while driving a piezoelectric actuator is prevented. A pulse-generation circuit is capable of selectively generating a displacement pulse and a stationary pulse as a drive pulse for application to a piezoelectric element, the displacement pulse having a duty ratio for causing a lens to be displaced by a predetermined step width, and the stationary pulse having a duty ratio for causing the lens to remain stationary in a current position. The pulse-generation circuit controls the production of the drive pulse continuously for a plurality of times within the servo control cycle, causes the displacement pulse to be produced when the remainder of a required amount of displacement is equal to or greater than a threshold value, and causes the stationary pulse to be continuously produced until the initiation of the next servo control cycle when the remainder is less than the threshold value. | 10-28-2010 |
20100265341 | IMAGE STABILIZATION CIRCUIT - A first high-pass filter comprising a low-pass filter which allows only a frequency component of an input signal less than or equal to a first frequency to pass, a latch unit which latches an output of a low-pass filter according to a control signal, and a calculating unit which outputs a difference between an input signal and an output of the latch unit are provided on an image stabilization circuit. When latching in the latch unit is released, a held value of the latch unit is stepwise changed to the output value of the low-pass filter. Such a first high-pass filter is used in a centering process of an optical element. | 10-21-2010 |
20100259181 | CONTROL CIRCUIT FOR LIGHT EMITTING DEVICE - A control circuit comprises a rectifier unit for performing full wave rectification on an AC power source, a switching element for switching a current flowing through a light emitting device which emits light in response to a voltage having been full wave rectified in the rectifier unit, a voltage dividing circuit for dividing the voltage having been full wave rectified in the rectifier unit to obtain a reference voltage Vref, a comparator for comparing a comparison voltage Vcmp corresponding to the current flowing through the light emitting device with the reference voltage Vref, and a control unit for controlling switching of the switching element based on a comparison result obtained in the comparator. | 10-14-2010 |
20100254549 | AMPLIFIER CIRCUIT OF CAPACITOR MICROPHONE - In an amplifier circuit of a capacitor microphone, when a too high input signal from the capacitor microphone is inputted, the levels of output signals of the amplifier circuit are limited. A first feedback capacitor of an operational amplifier is formed using a changeable capacitance type MOS capacitor element, and has a characteristic of increasing the capacitance value CAf | 10-07-2010 |
20100254544 | AMPLIFIER CIRCUIT OF CAPACITOR MICROPHONE - The invention provides an amplifier circuit of a capacitor microphone of which the noise resistance against noise of a supply voltage is enhanced. In an amplifier circuit of a capacitor microphone of the invention, while a noise component of a supply voltage is applied to one inversion input terminal of an operational amplifier of an amplification portion through a parasitic capacitor existing between an external power supply wiring and an external wiring that are adjacent to each other, the problem noise component of the supply voltage is applied to the other non-inversion input terminal by capacitive coupling to an internal power supply wiring. Therefore, the noise component is cancelled at the operational amplifier. | 10-07-2010 |
20100253388 | INTERFACE CIRCUIT - An interface circuit comprising: a first output circuit configured to allow an access signal to be input thereto and output the access signal to a storage circuit, the access signal capable of being changed to one logic level or the other logic level for accessing the storage circuit; a second output circuit configured to output the access signal outputted from the first output circuit; and a comparison circuit configured to compare the number of times a logic level of the access signal inputted to the first output circuit is changed and the number of times a logic level of the access signal outputted from the second output circuit is changed, and output a comparison signal indicating whether predetermined access has been performed based on the access signal inputted to the first output circuit, after at least a part of the access signal is inputted to the first output circuit. | 10-07-2010 |
20100252910 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - In a conventional semiconductor device, part of a dielectric film of a capacitive element is removed when photoresist is peeled off, and this causes problems of variation in capacitance value of the capacitive element and deterioration of breakdown voltage characteristics. In a semiconductor device according to the present invention, a silicon nitride film serving as a dielectric film is formed on the top face of a lower electrode of a capacitive element, and an upper electrode is formed on the top face of the silicon nitride film. The upper electrode is formed of a laminated structure having a silicon film and a polysilicon film protecting the silicon nitride film. This structure prevents part of the silicon nitride film from being removed when, for example, photoresist is peeled off, thereby preventing variation in capacitance value of the capacitive element and deterioration of the breakdown voltage characteristics. | 10-07-2010 |
20100244210 | LEAD FRAME AND METHOD FOR MANUFACTURING CIRCUIT DEVICE USING THE SAME - Provided are: a lead frame enabling efficient manufacturing of multiple circuit devices; and a method for manufacturing a circuit device using the same. In the lead frame of the present invention, units are arranged and frame-shaped first and second supporters are provided around the units to mechanically support the units. Moreover, a half groove is provided in the first supporter at a portion on an extended line of a dividing line defined at a boundary between each adjacent two of the units. Furthermore, a penetration groove penetrating a part of the second supporter at a portion on an extended line of another dividing line is provided. | 09-30-2010 |
20100244209 | CIRCUIT DEVICE AND METHOD FOR MANUFACTURING THE SAME - Provided are: a circuit device demonstrating an improved connection reliability while being mounted; and a method for manufacturing the same. The circuit device of the present invention includes: an island; leads arranged around the island, each lead having a lower surface and a side surface exposed to the outside; and a semiconductor element mounted on the island and electrically connected to the leads through thin metal wires. Furthermore, the exposed end portion of the lead is formed to spread toward the outside. By forming the lead in this manner, the area where the lead comes into contact with a brazing filler material is increased, thus improving the connection strength therebetween. | 09-30-2010 |
20100244091 | INSULATED GATE BIPOLAR TRANSISTOR - In some embodiments, an insulated gate bipolar transistor includes a drift layer, insulation gates formed at a principle surface portion of the drift layer, base regions formed in a between-gate region, an emitter region formed in the base region so as to be adjacent to the insulation gate, an emitter electrode connected to the emitter region, a collector layer formed at the other side of the principle surface portion of the drift layer, and a collector electrode connected to the collector layer. The conductive type base regions are separated with each other by the drift layers, and the drift layer and the emitter electrode are insulated by an interlayer insulation film. | 09-30-2010 |
20100233988 | RECEIVING APPARATUS - A receiving apparatus includes an analog demodulation unit, a digital demodulation/decoding unit, a delay unit, a reception state detecting unit, first/second processing units, and a mixing processing unit. The analog demodulation unit demodulates a first audio signal. The digital demodulation/decoding unit demodulates and decodes a second audio signal. The delay unit delays at least one of the first and second audio signals, to be outputted as third and fourth audio signals. The reception state detecting unit outputs an analog reception state signal. The first/second audio processing units control at least one of volume and quality of the third/fourth audio signals, to be outputted as fifth and sixth audio signals. The mixing processing unit mixes the fifth and sixth audio signal at a predetermined ratio, outputted according to a reception state of at least one of a broadcast wave of analog broadcasting and the broadcast wave of digital broadcasting. | 09-16-2010 |
20100230631 | ETCHING LIQUID COMPOSITION - A metal film such as an aluminum film or an aluminum alloy film is etched with good controllability, preventing a resist from bleeding, to have a proper taper configuration and superior flatness. | 09-16-2010 |
20100219783 | MOTOR DRIVE CIRCUIT - This invention provides a motor drive circuit, which makes it possible to prevent braking when a power supply voltage is lower than a predetermined voltage while suppressing at a low cost a rise in a voltage on a power supply line when a kickback occurs. The motor drive circuit is formed to include first and second power supply lines connected with and shunted from a power supply, an H-bridge circuit, and a means to control the H-bridge circuit. The means controls the H-bridge circuit so that a regeneration path is not created in the H-bridge circuit when the power supply voltage is lower than a predetermined voltage. | 09-02-2010 |
20100219517 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE AND MOLDING DIE - Provided is a method for manufacturing a semiconductor device in which movement of an island in resin sealing is prevented. A molding die includes an upper die and a lower die. The upper and lower dies are fitted together to form cavities and runners. In the lower die, a pod is provided. After heating and melting of a tablet made of a solid resin and housed in the pod, the melted sealing resin is pressurized by a plunger, and is supplied to each of the cavities. Specifically, a liquid sealing resin is supplied from the pod to the cavities, sequentially, from the upstream of the flow of the sealing resin supplied from the pod. The cavities communicate with each other through the runners. Furthermore, the runners through which the cavities communicate are provided to be tilted with respect to a path for supplying the sealing resin. | 09-02-2010 |
20100216417 | Digital Data Processing Circuit - A digital data processing circuit includes: an output unit configured to output to an audio signal processing circuit change data for changing a receiving frequency of a FM receiving device as a first frequency to a second frequency in response to an instruction signal providing an instruction to change the receiving frequency to the second frequency, the audio signal processing circuit being a circuit configured to modulate a carrier wave having the first frequency corresponding to setting data with a modulation signal corresponding to an audio signal to be reproduced by the FM receiving device and to the change data, and transmit the modulated carrier wave to the FM receiving device; and a setting unit configured to set the setting data so as to change a frequency of the carrier wave to the second frequency after the output unit outputs the change data to the audio signal processing circuit. | 08-26-2010 |
20100216416 | Digital Data Processing Circuit - A digital data processing circuit comprising: a setting unit configured to set setting data on an audio signal processing circuit configured to generate an FM modulated signal based on the setting data, the FM modulated signal being a signal to be transmitted wirelessly to an FM radio receiver; and an output unit configured to output audio data for reproducing a predetermined audio signal while the setting unit sets the setting data on the audio signal processing circuit. | 08-26-2010 |
20100214035 | Reference Frequency Control Circuit - A reference frequency control circuit comprising: a frequency voltage converting circuit configured to receive an oscillation signal from an oscillator circuit, and output an output voltage corresponding to a frequency of the oscillation signal, the oscillator circuit being a circuit configured to oscillate at a frequency corresponding to a level of an input signal; and a control circuit configured to control a level of the input signal so that the output voltage is at a predetermined level. | 08-26-2010 |
20100207197 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - In the semiconductor device according to the present invention, a P type diffusion layer and an N type diffusion layer as a drain lead region are formed on an N type diffusion layer as a drain region. The P type diffusion layer is disposed between a source region and the drain region of the MOS transistor. When a positive ESD surge is applied to a drain electrode, causing an on-current of a parasite transistor to flow, this structure allows the on-current of the parasite transistor to take a path flowing through a deep portion of an epitaxial layer. Thus, the heat breakdown of the MOS transistor is prevented. | 08-19-2010 |
20100203857 | RADIO RECEIVER - Current position information is acquired based on input by an inputting unit. A broadcasting station memory stores, for each region and for each genre, data regarding a frequency of an existing broadcasting station. A reception frequency is determined based on the current position information and on the frequency of the broadcasting station for each genre at the current position acquired referring to the data of the broadcasting station memory. | 08-12-2010 |
20100203853 | USAGE FREQUENCY DETERMINING DEVICE AND TRANSMITTING DEVICE - Current position information is acquired based on input by an inputting device. An available frequency memory stores, for each region, data regarding an available frequency that is not used for broadcasting from a broadcasting station. A usage frequency is determined based on the current position information and on the available frequency at the current position acquired referring to the data of the available frequency memory. | 08-12-2010 |
20100201409 | Frequency Divider Circuit - A frequency divider circuit includes: a shift register capable of storing at least n-bit data configured to shift an input signal sequentially in synchronization with a clock signal; a pulse generating circuit configured to change the input signal into a pulse form in response to a change in logic level of an output signal from a stage of the shift register among n-bit output signals from the shift register, the stage corresponding to a bit resulting from shifting of the input signal by n bits; and a frequency dividing signal generating circuit configured to generate a frequency dividing signal whose logic level is inverted in response to a change in logic level of an output signal from any one stage of the shift register or logic level of the input signal, in order to divide the clock signal in frequency by a dividing ratio corresponding to the n bits. | 08-12-2010 |
20100194364 | Switching Power-Supply Control Circuit - A switching-power-supply control circuit comprising: a first control circuit to operate a first transistor applied with an input voltage at an input electrode thereof and a second transistor connected in series to the first transistor, based on a first feedback voltage and first reference voltage, the first feedback voltage corresponding to an output voltage obtained through a connection point between the first and second transistors; and a second control circuit to allow the first control circuit to turn on/off the first and second transistors in a complementary manner so that the first feedback voltage becomes equal to the first reference voltage, when a second feedback voltage rising with rise of the output voltage is lower than a second reference voltage, and allow the first control circuit to turn off the second transistor, when the second feedback voltage is higher than the second reference voltage, according to the output voltage. | 08-05-2010 |
20100193865 | DMOS TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - The invention provides a DMOS transistor in which a leakage current is decreased and the source-drain breakdown voltage of the transistor in the off state is enhanced when a body layer is formed by oblique ion implantation. After a photoresist layer | 08-05-2010 |
20100191528 | SPEECH SIGNAL PROCESSING APPARATUS - A speech signal processing apparatus comprising: a control signal output unit configured to receive as an input signal either one of a first speech signal corresponding to a sound uttered by a user and a second speech signal corresponding to a sound output from an eardrum of the user when the user utters a sound, and output a control signal corresponding to a noise level of the input signal; and a speech signal output unit configured to output either one of the first speech signal and the second speech signal according to the control signal. | 07-29-2010 |
20100188924 | DATA TRANSFER SYSTEM - The invention is directed to decreasing a circuit size of a system in which a plurality of devices or circuit blocks share and use one memory. A system is configured so that a memory block serves as a master and each of circuit blocks serves as a slave, and thus the slave side (the circuit blocks) receives necessary data from the memory block by only having decoders corresponding to addresses assigned thereto in advance and registers. In this case, since the registers have been also needed in a conventional system in order to hold data read out from a memory, the circuit size decreases in the whole system. Since this effect is enhanced in proportion to the number of the circuit blocks sharing the memory block, the effect is enhanced as the system size increases. | 07-29-2010 |
20100188157 | ELECTRONIC CIRCUIT - This invention makes it possible to reduce a power consumption of an electronic circuit (microcomputer, for example) while preventing malfunctioning of an oscillator by appropriately setting a power supply impedance of a low frequency oscillator corresponding to an operation mode. A high frequency oscillator, a medium frequency oscillator and a low frequency oscillator are provided as sources of system clocks. In addition, there is provided a quartz oscillator to generate a clock for a timepiece. When the high frequency oscillator is in operation, a power supply impedance of the quartz oscillator is reduced to improve a noise tolerance. In a waiting period during which the high frequency oscillator, the medium frequency oscillator and the low frequency oscillator are halted, on the other hand, the power supply impedance of the quartz oscillator is increased to suppress the power consumption. | 07-29-2010 |
20100188103 | PULSE PERIOD MEASUREMENT METHOD - The effect of chattering on the measurement of the pulse period is reduced. The pulse period representing the rise interval of target pulses appearing in a pulse signal PI is measured. The pulse signal PI is sampled in synchronization with a measurement clock CLK. Measurement of a designated inhibition period is started in synchronization with the fall of the signal PI. Measurement of the current pulse period is completed and measurement of a new pulse period is started if the inhibition period has elapsed at the rise of the signal PI. Counting of the current pulse period is continued if the inhibition period has not elapsed. | 07-29-2010 |
20100188032 | MOTOR SPEED CONTROLLER - A motor speed controller detects out-of-control reverse rotation of a motor even when the pulse signal obtained from the motor and synchronized with the rotation is of only one kind. A target instruction signal is generated on the basis of a target rotational speed ω | 07-29-2010 |
20100188030 | MOTOR SPEED CONTROLLER - In a motor speed controller, feedback control is implemented at a gain independent of the target rotational speed ω | 07-29-2010 |
20100187653 | SEMICONDUCTOR DEVICE - A conventional semiconductor device has a problem that an on-current of a parasitic transistor flows through a surface portion of a semiconductor layer and thus a semiconductor element undergoes thermal breakdown. In a semiconductor device according to the present invention, a protection element is formed with use of an isolation region and N type buried layers. A PN junction region in the protection element is formed on a P type buried layer of the isolation region. The PN junction region has a junction breakdown voltage lower than that of a PN junction region of a semiconductor element to be protected. This structure allows an on-current of a parasitic transistor to flow into the protection element, and thereby the semiconductor element is protected. In addition, the on-current of the parasitic transistor flows through a deep portion of the epitaxial layer, and thereby the protection element is prevented from thermal breakdown. | 07-29-2010 |
20100187640 | INSULATED GATE SEMICONDUCTOR DEVICE - A two-layer electrode structure is provided. A protection diode is provided not to overlap a gate pad portion. Cells and a first one of source electrode layers can be provided below the gate pad portion, so that the differences in resistance among various points in the source electrode layers can be decreased. In addition, the protection diode is positioned adjacent to a device region and at an end portion, of a chip, outward of the device region in such a way as to be in the closest proximity to the gate pad portion. A larger device region with efficient transistor operation can thus be secured, and the resistance of the first source electrode layer below a wiring portion can be reduced. | 07-29-2010 |
20100182066 | Clock Generating Circuit - A main (sub) clock circuit comprising a first (second) capacitor, a first (second) current-supply circuit to supply to the first (second) capacitor a first (third) current for charging at a predetermined-current value or a second (fourth) current for discharging at a predetermined-current value, a first (second) charge/discharge-control circuit to output a first (second) control signal for switching between the first (third) current and second (fourth) current which are supplied to the first (second) capacitor from the first (second) current-supply circuit when a voltage across the first (second) capacitor has reached a first (third) reference voltage or second (fourth) reference voltage higher than the first (third) reference voltage, and a first (second) output circuit to output a main (sub) clock according to the first (second) control signal, the first capacitor having one end connected to a first potential, the second capacitor having one end to which the main clock is input. | 07-22-2010 |
20100182054 | Triangle Wave Generating Circuit - A triangle wave generating circuit comprising: a pulse generating circuit configured to generate a plurality of pulse signals with the same period and with phases different from one another; and a plurality of charge/discharge circuits configured to be supplied with the plurality of pulse signals, respectively, the plurality of charge/discharge circuits each including: a current supply circuit configured to supply to a capacitor a first current for charging at a predetermined current value or a second current for discharging at a predetermined current value; and a charge/discharge control circuit configured to switch between the first current and the second current when the pulse signals are supplied thereto and when a voltage across the capacitor reaches a predetermined reference voltage, the first current and the second current supplied from the current supply circuit to the capacitor. | 07-22-2010 |
20100181951 | MOTOR DRIVE CIRCUIT - The invention provides a motor with a low speed start function and a soft start function. The motor includes a first pulse generation circuit generating a first pulse signal of which a first duty ratio of one of logic levels is increased as a drive voltage corresponding the target rotation speed of the motor is increased, a second pulse generation circuit generating a second pulse signal of which a second duty ratio of one of logic levels is different from the first duty ratio, and a drive control circuit supplying a drive current to a motor coil at the second duty ratio in order to start the rotation of the motor that is stopping and supplying a drive current to the motor coil at the first duty ratio after a predetermined time passes from the start of the rotation of the motor in response to a rotation signal corresponding to the rotation of the motor. | 07-22-2010 |
20100176758 | Motor Driving Circuit - A motor-driving-circuit comprising: a first to-fourth-transistors; a drive-control-circuit to control a energization-state of a motor coil so as to be a driving-state where either one group of a groups of the first-and-fourth-transistors and the second-and-third-transistors is on and the other group is off, or so as to be a regeneration-state where the first-and-third-transistors are off and the second-and-fourth-transistors are on; a set-current-detection-circuit; an overcurrent-detection-circuit; and an overcurrent-protection-circuit to output a regeneration-instruction-signal for shifting the energization-state to the regeneration-state if an overcurrent-state does not occur and output a drive-stop-signal for stopping driving the coil if the overcurrent-state occurs, when a current amount flowing through the coil has reached a set-level in the driving-state, the drive-control-circuit shifting the energization-state to the regeneration-state to be maintained for a predetermined time period and thereafter returning the energization-state to the driving-state when the regeneration-instruction-signal is output, and turning off the first-to-fourth-transistors when the drive-stop-signal is output. | 07-15-2010 |
20100171723 | SIGNAL PROCESSING DEVICE OF TOUCH PANEL - There is offered a signal processing device of touch panel using an electrostatic capacity, which realizes improvement in noise tolerance and linear detection. An excitation pad, a first touch pad and a second touch pad are disposed on a substrate in a way that the excitation pad is interposed between the first and second touch pads. On the other hand, an alternating current power supply that provides the excitation pad with an alternating voltage through a wiring is provided on a sensor IC side of the signal processing device of touch panel. Also, there is provided an electric charge amplifier. The first touch pad is connected to a non-inverting input terminal (+) of the electric charge amplifier through an wiring, while the second touch pad is connected to an inverting input terminal (−) of the electric charge amplifier through a wiring. | 07-08-2010 |
20100164086 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - This invention is directed to offer a package type semiconductor device that can realize a smaller size device and its manufacturing method as well as a small stacked layer type semiconductor device and its manufacturing method. A device component | 07-01-2010 |
20100163922 | INSULATED GATE SEMICONDUCTOR DEVICE - By integrating a diode and a resistor connected in parallel into the same chip as an IGBT and connecting a cathode of the diode to a gate of the IGBT, the value of dv/dt can be limited to a predetermined range inside the chip of the IGBT without a deterioration in turn-on characteristics. Since the chip includes a resistor having such a resistance that a dv/dt breakdown of the IGBT can be prevented, the IGBT can be prevented from being broken by an increase in dv/dt at a site (user site) to which the chip is supplied. | 07-01-2010 |
20100159670 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - The invention enhances the accuracy of an end point detection when an insulation film formed on a semiconductor substrate is dry-etched. Gate layers made of polysilicon are formed, and an end point detection dummy layer made of polysilicon is formed on a LOCOS. After the gate layers and the dummy layer are formed, a TEOS film is formed on a silicon substrate so as to cover the gate layers and the dummy layer. The TEOS film, a thin gate oxide film and a thick gate oxide film are then dry-etched to form sidewalls on the sidewalls of the gate layers and also expose the front surface of the P well of the silicon substrate in a region surrounded by the LOCOS. The end point detection dummy layer helps the end point detection by being exposed during this dry-etching to enhance the accuracy of the end point detection. | 06-24-2010 |
20100156372 | SWITCHING CONTROL CIRCUIT - A switching control circuit includes an N-channel MOSFET having an input electrode applied with an input voltage and an output electrode connected to one end of an inductor and one end of a rectifying element. The other end of the inductor is connected to a first capacitor. A bootstrap circuit is configured to generate a bootstrap voltage on a second capacitor having one end connected to the output electrode of the N-channel MOSFET. The bootstrap voltage is required when the N-channel MOSFET is turned on. A driving circuit is configured to be applied with a driving voltage corresponding to the bootstrap voltage and turn on/off the N-channel MOSFET to generate an output voltage of a target level on the first capacitor. A clamping circuit is configured to clamp the driving voltage to be at a predetermined level or lower. | 06-24-2010 |
20100156317 | LIGHT-EMITTING ELEMENT DRIVING CIRCUIT - A light-emitting element driving circuit includes a PWM signal output circuit configured to output a plurality of PWM signals each having one logic level whose duty ratio corresponds to gradation data and each corresponding to each of a plurality of light-emitting elements, on the basis of the gradation data indicating brightness of each of the plurality of light-emitting elements. A driving signal output circuit is configured to change the duty ratio of each of the plurality of inputted PWM signals to output the plurality of changed PWM signals as a plurality of driving signals, on the basis of instruction data for changing the brightness of the plurality of light-emitting elements. A driving circuit is configured to drive the plurality of light-emitting elements on the basis of a duty ratio of each of the plurality of driving signals. | 06-24-2010 |
20100148268 | INSULATED-GATE SEMICONDUCTOR DEVICE - Channel regions continuous with transistor cells are disposed also below a gate pad electrode. The channel region below the gate pad electrode is fixed to a source potential. Thus, a predetermined reverse breakdown voltage between a drain and a source is secured without forming a p+ type impurity region below the entire lower surface of the gate pad electrode. Furthermore, a protection diode is formed in a conductive layer disposed at the outer periphery of an operation region. | 06-17-2010 |
20100141690 | LIGHT-EMITTING ELEMENT DRIVING CIRCUIT - A light-emitting element driving circuit comprising: an index data storage unit configured to store n-bit index data for each of a plurality of light-emitting elements included in a display device, the n-bit index data specifying a storage location of gradation data indicating brightness of a light-emitting element in the plurality of light-emitting elements: a gradation data storage unit configured to store the gradation data with m bits larger than n bits, corresponding to the index data; and a driving circuit configured to drive the light-emitting element on the basis of the gradation data corresponding to the index data so that the light-emitting element emits light at brightness according to the gradation data. | 06-10-2010 |
20100130000 | Method of manufacturing semiconductor device - When a bump electrode is formed on an opening formed in a semiconductor substrate, the invention prevents a void that is caused by gas trapped in the opening. A method of manufacturing a semiconductor device of the invention includes forming a first wiring on a main surface of a semiconductor substrate, forming an opening in the semiconductor substrate from the back surface to the main surface so as to expose the back surface of the first wiring, forming a second wiring connected to the back surface of the first wiring and extending from inside the opening onto the back surface of the semiconductor substrate, forming a solder layer connected to part of the second wiring on the bottom of the opening and extending from inside the opening onto the back surface of the semiconductor substrate, and forming a bump electrode on the opening by reflowing the solder layer. | 05-27-2010 |
20100128506 | MEMORY - A memory includes conductive layers provided to extend along the word lines, memory cells each including a diode having a cathode connected to the conductive layer and a source line reading data stored in the memory cells, wherein either the conductive layers or the bit lines are in floating states in a standby time. | 05-27-2010 |
20100124411 | Image stabilization control circuit and image-capturing device - An image stabilization control circuit of an image-capturing device prevents overflow of data in an integration process performed in a digital signal process on a signal outputted by a gyro-sensor. A gyro-filter receives, as an input, fixed-point format angular velocity data (D | 05-20-2010 |
20100111123 | DRIVER CIRCUIT OF LIGHT-EMITTING ELEMENT - A driver circuit is provided which comprises a series-connected unit having a light-emitting element and a current limiting inductor directly connected to the light-emitting element, a regenerative diode which is connected in parallel to the series-connected unit and which regenerates energy stored in the current limiting inductor, a transistor which controls a current flowing through the light-emitting element and the current limiting inductor, and a controller which controls an operation of the transistor, wherein the controller controls the transistor according to a voltage value of a power supply applied to the light-emitting element. | 05-06-2010 |
20100103157 | LIQUID CRYSTAL DISPLAY DRIVE CIRCUIT - A liquid crystal display drive circuit that suppresses a pulse noise in a liquid crystal display panel without increasing a mounting area is offered. A common signal COMi is varied in a staircase waveform with an increment of 1/3 VLCD in such a way that a high electric potential VLCD→a first intermediate electric potential VLCD | 04-29-2010 |
20100102886 | AMPLIFIER DEVICE - Provided is an amplifier device including a J-FET, a bipolar transistor, a first resistor and a second resistor. The amplifier device has a configuration in which a gate of the J-FET is connected to one end of an ECM and one end of the first resistor, a drain of the J-FET is connected to an input terminal of the bipolar transistor, a high-potential side of the bipolar transistor is connected to one end of a load resistor, the other end of the first resistor is grounded, a source of the J-FET and a low-potential side of the bipolar transistor are connected to one end of the second resistor, the other end of the second resistor is grounded, and an output voltage is drawn from the high-potential side of the bipolar transistor. | 04-29-2010 |
20100102460 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device and its manufacturing method are offered to increase the number of semiconductor devices obtained from a semiconductor wafer while simplifying a manufacturing process. After forming a plurality of pad electrodes in a predetermined region on a top surface of a semiconductor substrate, a supporter is bonded to the top surface of the semiconductor substrate through an adhesive layer. Next, an opening is formed in the semiconductor substrate in a region overlapping the predetermined region. A wiring layer electrically connected with each of the pad electrodes is formed in the opening. After that, a stacked layer structure including the semiconductor substrate and the supporter is cut by dicing along a dicing line that is outside the opening. | 04-29-2010 |
20100096659 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - The invention is directed to providing a smaller semiconductor device having a light emitting element with a low manufacturing cost and a method of manufacturing the same. An adhesive layer | 04-22-2010 |
20100094641 | AUDIO SIGNAL PROCESSING CIRCUIT - An audio signal processing circuit is provided which comprises an ADC which samples an audio signal at a predetermined sampling frequency, a high-band compensation processor which compensates a signal sampled by the ADC to a frequency band which is higher than a signal band sampled by the sampling frequency, and an encoding unit which encodes a signal processed by the high-band compensation processor. | 04-15-2010 |
20100090636 | MOTOR CONTROL CIRCUIT - A motor control circuit | 04-15-2010 |
20100090624 | MOTOR CONTROL CIRCUIT - In some preferred embodiments, a motor control circuit | 04-15-2010 |
20100090330 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided is a thin semiconductor device using a thin metal wire and having a low top portion. The semiconductor device of the present invention has a structure in which a bonding pad | 04-15-2010 |
20100081398 | AUDIO SIGNAL PROCESSING CIRCUIT - An audio signal processing circuit comprising: a modulation circuit configured to output a modulated signal of a frequency corresponding to an input audio signal; a drive circuit configured to generate a driving current for driving the modulation circuit based on a control signal; an audio detection circuit configured to detect presence or absence of the audio signal input to the modulation circuit; and a control signal generation circuit configured to generate the control signal for generating the driving current in the drive circuit when the presence of the audio signal is detected and generate the control signal for stopping generation of the driving current in the drive circuit when the absence of the audio signal is detected for a predetermined period, based on a detection result of the audio detection circuit. | 04-01-2010 |
20100079198 | Constant Current Circuit - A constant-current circuit comprising: a temperature-compensation circuit to output a temperature-compensated first current; and a current-supply circuit to supply a second current to the temperature-compensation circuit, the temperature-compensation circuit including a voltage-multiplication circuit including a first transistor to generate a base-collector voltage obtained by multiplying a base-emitter voltage by a predetermined ratio, a second transistor identical in conductivity type and substantially equal in base-emitter voltage to the first transistor, a first resistor having two ends connected to a first-transistor collector and second-transistor base, respectively, and a second resistor having two ends connected to first and second-transistor emitters, respectively, the first current being output according to a second-transistor collector current, the second current being supplied to a connection point between a second-transistor base and the first resistor, to generate between both ends of the first resistor a voltage varying substantially in proportion to temperature. | 04-01-2010 |
20100079082 | Light-Emitting Element Driving Control Circuit - A light-emitting-element-driving-control circuit comprising: a control circuit to turn on or off a transistor based on an input-control signal, the transistor being connected in series with a light-emitting element and an inductor connected in series and controlling increase and decrease of a driving current of the light-emitting element; a maximum-value-detection circuit to detect a maximum value of the driving current; and a control-signal-generation circuit to generate the control signal for turning on the transistor to increase the driving current at a speed corresponding to a level of a power-supply voltage when the driving current is smaller than the maximum value and turning off the transistor to be kept for a predetermined period to decrease the driving current at a speed corresponding to a level of a forward voltage of the light-emitting element when the driving current reaches the maximum value, based on a detection result of the maximum-value-detection circuit. | 04-01-2010 |
20100078833 | CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided are a thin circuit device with show-through of thin metal wires prevented and a method of manufacturing the circuit device. A circuit device mainly includes: a substrate including a first substrate and second substrates; pads formed respectively on upper surfaces of the second substrates; a semiconductor element fixed on an upper surface of the first substrate; thin metal wires each connecting the semiconductor elements and a corresponding one of the pads; and a sealing resin with which the semiconductor element and the thin metal wires are covered, and which thereby seals the circuit device with the semiconductor element and the thin metal wires disposed therein. Furthermore, filler particles located in the uppermost portion of the sealing resin are covered with a resin material constituting the sealing resin. | 04-01-2010 |
20100078709 | SEMICONDUCTOR DEVICE - In a conventional semiconductor device, protection of a to-be-protected element from a surge voltage is difficult because the to-be-protected element is turned on before a protection element due to variations in manufacturing conditions. In a semiconductor device of the present invention, a protection element and a MOS transistor have part of their structures formed under common conditions. N type diffusion layers of the protection element and the MOS transistor are formed in the same process, while the N type diffusion layer of the protection element has a larger diffusion width than the N type diffusion layer of the MOS transistor. With this structure, when a surge voltage is applied to an output terminal, the protection element is turned on before the MOS transistor, and thereby the MOS transistor is protected from an avalanche current. | 04-01-2010 |
20100078675 | CIRCUIT DEVICE - Provided is a circuit device having a configuration in which thermal interference between built-in elements is suppressed and being miniaturized in total size. A hybrid integrated circuit device of the present invention includes: a circuit substrate, a sealing resin and leads. The circuit substrate in its upper surface is incorporated with a hybrid integrated circuit formed of semiconductor elements and the like respectively fixed to heat spreaders. The sealing resin coats the circuit substrate and thus seals the hybrid integrated circuit. The leads each extend to the outside while being fixed to a pad formed of a conductive pattern. In this hybrid integrated circuit device, the semiconductor elements are mounted on the respective heat spreaders at positions offset from each other, and thereby are arranged to be spaced away from each other. | 04-01-2010 |
20100066390 | CAPACITANCE VARIATION DETECTION CIRCUIT AND SEMICONDUCTOR DEVICE - In a hybrid IC including, a semiconductor chip including a capacitance sensor and a semiconductor chip including a detection circuit for detecting a variation in capacitance, the number of bonding wires required between the chips is reduced. A rear surface of a sensor chip is connected to an electrode on a surface of a support substrate on which the sensor chip is mounted. A potential at one terminal of a capacitor of a sensor is set at a reference potential. A pad of another terminal is formed on a surface of the sensor chip. A detection circuit chip includes: a pad to serve as a connection terminal of the capacitor; a bias circuit connected to a terminal, for outputting a bias voltage to charge the capacitor; and a detection circuit connected to the terminal through a capacitor, for detecting a variation in potential of the terminal of the capacitor as an electrical signal. The chips are interconnected through a bonding wire between the pad of the terminal and the pad of the terminal. | 03-18-2010 |
20100066330 | SEMICONDUCTOR CIRCUIT - A semiconductor circuit ( | 03-18-2010 |
20100065945 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor integrated circuit is reduced in size by suppressing lateral extension of an isolation region when impurities are thermally diffused in a semiconductor substrate to form the isolation region. Boron ions (B+) are implanted into an epitaxial layer through a third opening K | 03-18-2010 |
20100060674 | LIGHT-EMITTING ELEMENT DRIVING CIRCUIT - A light-emitting element driving circuit ( | 03-11-2010 |
20100052732 | FREQUENCY DETECTION CIRCUIT - In some preferred embodiments, a switched capacitor circuit configured to change its equivalent resistance depending on the frequency of an input clock signal and a resistor element are connected in series. A power source voltage is divided by the equivalent resistance of the switched capacitor circuit and the resistance of the resistor element, and the divided voltage is inputted to a Schmitt circuit. The Schmitt circuit outputs a high-level signal when the inputted divided voltage is higher than a threshold voltage and a low-level signal when the inputted divided voltage is lower than a threshold voltage. Thus, depending on the frequency of the input clock signal, a high-level signal or a low-level signal is outputted. | 03-04-2010 |
20100052430 | NONCONTACT TRANSMISSION DEVICE - A noncontact transmission device ( | 03-04-2010 |
20100052138 | RESIN MOLDED SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - This invention is directed to provide a method of manufacturing a resin molded semiconductor device with high reliability by preventing a resin leakage portion from occurring due to burrs on a lead frame formed by punching. The method of manufacturing the resin molded semiconductor device according to the invention includes bonding a semiconductor die on an island in a lead frame, electrically connecting the semiconductor die with the lead frame, resin-molding the lead frame on which the semiconductor die is bonded, and applying prior to the resin-molding a compressive pressure that is higher than a clamping pressure applied in the resin-molding to a region of the lead frame being clamped by molds in the resin-molding of the lead frame. | 03-04-2010 |
20100052125 | RESIN SEALING TYPE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME, AND LEAD FRAME - The invention is directed to firm bonding between semiconductor dies etc bonded to a lead frame and wire-bonding portions of the lead frame by ultrasonic Al wire bonding, and the prevention of shortcircuit between the semiconductor dies etc due to a remaining portion of the outer frame of the lead frame after the outer frame is cut. By extending the wire-bonding portion etc on the lead frame in a wire-bonding direction and connecting the wire-bonding portion etc to the outer frame of the lead frame through a connection lead etc, the ultrasonic vibration force in the ultrasonic Al wire bonding is prevented from dispersing and the Al wire and the wire-bonding portion etc are firmly bonded. The outer frame is cut after a resin sealing process is completed. Even when a portion of the outer frame remains on the side surface of the resin package, connection between the connection lead etc and other hanging lead etc are prevented by providing a notch etc in the outer frame between the connection lead etc and the hanging lead etc. | 03-04-2010 |
20100052124 | RESIN SEALING TYPE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME, AND RESIN SEALING TYPE ELECTRONIC DEVICE - The invention provides a resin sealing type electronic device having high reliability by eliminating a solder burr formed when a tie bar is cut. The invention also prevents a welding failure between a lead of the resin sealing type electronic device and an external electrode, and provides a large area for bonding an electronic component to the lead to prevent a connection failure. In the method of manufacturing the resin sealing type semiconductor device of the invention, in a case that a tie bar is cut after a semiconductor die and so on are mounted on a lead frame and these are resin-sealed, the cutting of the tie bar is performed from the side of the lead frame where a lead burr is formed by presswork. Furthermore, in the resin sealing type electronic device of the invention, a die capacitor is bonded to burr formation surfaces of a lead and an island using conductive paste. Since the burr formation surface has a larger surface area than a rounded surface, a large bonding area is obtained. A welding surface of the lead to a control electrode is the rounded surface that is opposite to the burr formation surface. | 03-04-2010 |
20100052102 | SEMICONDUCTOR DEVICE - Emitter contact holes formed under emitter electrodes in a first layer and emitter through holes formed thereon are arranged so as not to overlap each other, and, for each emitter electrode, the multiple emitter contact holes and the multiple emitter through holes are provided so as to be separated from each other. Thereby, the top surface of an emitter electrode in a second layer is influenced by at most only a level difference of each emitter through hole formed in an insulating film having a larger thickness, and thus the flatness of the top surface of the emitter electrode in the second layer is improved. Accordingly, fixation failure of a metal plate can be avoided. | 03-04-2010 |
20100052101 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor integrated circuit is reduced in size by suppressing lateral extension of an impurity region when impurities in the impurity region are thermally diffused in a semiconductor substrate. A second photoresist is formed on an insulation film. The second photoresist is formed to have second openings K | 03-04-2010 |
20100052090 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - The invention is directed to reduction of a manufacturing cost and enhancement of a breakdown voltage of a PN junction portion abutting on a guard ring. An N− type semiconductor layer is formed on a front surface of a semiconductor substrate, and a P type semiconductor layer is formed thereon. An insulation film is formed on the P type semiconductor layer. Then, a plurality of grooves, i.e., a first groove, a second groove and a third groove are formed from the insulation film to the middle of the N− type semiconductor layer in the thickness direction thereof. The plurality of grooves is formed so that one of the two grooves next to each other among these, that is closer to an electronic device, i.e., to an anode electrode, is formed shallower than the other located on the outside of the one. Then, an insulating material is deposited in the first groove, the second groove and the third groove. The lamination body of the semiconductor substrate and the layers laminated thereon is then diced along dicing lines. | 03-04-2010 |
20100052012 | SEMICONDUCTOR DEVICE - The first base electrodes and the first emitter electrodes are all formed like strips, and are alternately arranged in parallel, and the area of the second emitter electrode is expanded to be larger than that of the second base electrode. With this, the number of current paths increases in each of which a current is pulled up almost straight from the emitter region to the second emitter electrode through the first emitter electrodes, thereby preventing the current densities of the entire chip from becoming uneven. | 03-04-2010 |
20100046580 | TEMPERATURE SENSOR CIRCUIT - A temperature sensor circuit includes a band-gap reference voltage circuit. The resistor and diode-connected bipolar transistor of the band-gap reference voltage circuit are separated into a transistor-resistor series circuit and a transistor-diode series circuit. The transistor-resistor series circuit is configured such that an emitter of the bipolar transistor Q | 02-25-2010 |
20100045367 | LOW-VOLTAGE OPERATION CONSTANT-VOLTAGE CIRCUIT - According to a preferred embodiment of the present invention, a low-voltage operation constant-voltage circuit includes a band-gap reference voltage circuit including a resistor-diode series circuit as a main component. A resistor and a diode-connected bipolar transistor are connected in series to create a constant current. It also includes an output circuit connected in parallel to the resistor-diode series circuit and formed so that the same constant current as the current flowing through the resistor-diode series circuit flows. The output circuit includes a diode-connected MOS transistor, and is configured to cancel the positive temperature coefficient of the current flowing through the output circuit by the MOS transistor. With this, a stable output low-voltage of, e.g., about 0.6 V, excellent in temperature characteristics can be obtained regardless of the ambient temperature changes. | 02-25-2010 |
20100045252 | POWER SUPPLY CIRCUIT - When an output of an overall output terminal ( | 02-25-2010 |
20100044873 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - When a thin semiconductor device is formed by grinding a wafer, it has been necessary to dice the wafer into dies and process the back surfaces of the dies separately. In the invention, a wafer | 02-25-2010 |
20100044821 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - This invention offers a semiconductor device to measure a luminance for the visible wavelength range of light components and its manufacturing method which reduce its manufacturing cost. A first light-receiving element and a second light-receiving element are formed in a semiconductor substrate. Then, there is formed an arithmetic circuit that calculates a difference between a value of an electric current corresponding to an amount of light detected by the first light-receiving element (that is, a value of an electric current representing a relative sensitivity against the light) and a value of an electric current corresponding to an amount of light detected by the second light-receiving element (that is, a value of an electric current representing a relative sensitivity against the light). Next, a first green pass filter permeable only to light in a green wavelength range and an infrared wavelength range is formed to cover the first light-receiving element, while a second green pass filter similar to the first green filter is formed to cover the second light-receiving element. In addition, a red pass filter permeable only to light in a red wavelength range and the infrared wavelength range is formed to cover the second light-receiving element. | 02-25-2010 |
20100038668 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - The invention is directed to providing a smaller semiconductor device with a lower manufacturing cost and higher reliability and a method of manufacturing the same. A light emitting element (a LED die | 02-18-2010 |
20100033118 | Motor Drive Circuit - A motor drive circuit includes a first amplifier circuit to amplify a difference between first and second position detection signals with a gain becoming smaller according to drop in power supply voltage, to output a first amplification signal, the first and second position detection signals being signals indicating a rotational position of a rotor in a motor, having a frequency corresponding to a rotation speed of the motor, and being opposite in phase to each other; a second amplifier circuit to amplify the difference between the first and second position detection signals with the gain, to output a second amplification signal opposite in phase to the first amplification signal; and a drive circuit to amplify the difference between the first amplification signal and the second amplification signal with a predetermined gain to be saturated at the power supply voltage, to output a driving voltage for driving the motor. | 02-11-2010 |
20100025828 | SEMICONDUCTOR DEVICE, SEMICONDUCTOR MODULE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND LEAD FRAME - To provide a semiconductor device and a semiconductor module in which breakage of a semiconductor element due to a pressing force given from the outside is prevented. A semiconductor device according to the present invention has a configuration mainly including an island, a semiconductor element mounted on a front surface of the island, a lead that functions as an external connection terminal, and a sealing resin that covers these components in an integrated manner and mechanically supports them. Further, a through-hole is provided so as to penetrate the sealing resin. A front surface of the sealing resin around the through-hole forms a flat part. The front surface of the sealing resin that overlaps the semiconductor element is depressed inward with respect to the flat part to form a depressed part. | 02-04-2010 |
20100013056 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - The invention prevents a fracture parallel to a cleavage plane of a supporting substrate along a groove formed in the supporting substrate before dicing. A supporting substrate is attached to a front surface of a semiconductor substrate formed with an electronic device with an adhesive layer being interposed therebetween. In this supporting substrate, dicing lines are not parallel with cleavage planes which are perpendicular to the front surface of supporting substrate, i.e., a fifth cleavage plane and a sixth cleavage plane crossing perpendicularly thereto. A groove is then formed in the supporting substrate from the front surface to the middle thereof in the direction perpendicular to the front surface, along the dicing lines inside an opening provided in the semiconductor substrate. This groove is not parallel with the fifth cleavage plane and the sixth cleavage plane. After given processes, dicing is performed to the layered body of layers from the semiconductor substrate to the supporting substrate along the dicing lines. | 01-21-2010 |
20100013008 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - The invention prevents a semiconductor device from warping due to heat when it is used. The invention also prevents a formation defect such as peeling of a resist layer used as a plating mask and a formation defect of a front surface electrode. A source pad electrode connected to a source region is formed on a front surface of a semiconductor substrate forming a vertical MOS transistor. A front surface electrode is formed on the source pad -electrode by a plating method using a resist layer having openings as a mask. The semiconductor substrate formed with the front surface electrode is thinned by back-grinding. A back surface electrode connected to a drain region is formed on the back surface of the semiconductor substrate. The front surface electrode and the back surface electrode are made of metals having the same coefficients of linear expansion, preferably copper. The front surface electrode and the back surface electrode preferably have the same thicknesses or almost the same thicknesses. | 01-21-2010 |
20100009647 | Receiving Apparatus - A receiving apparatus comprising: a first mixing unit to output first and second mixed signals each having a first frequency that is a frequency difference between a received signal and a first local oscillator signal, the first and second mixed signals having phases substantially orthogonal to each other; a phase control unit to output second and third local oscillator signals each having a second frequency, the second and third local oscillator signals having a phase difference from each other corresponding to a phase difference between the first and second mixed signals; and a second mixing unit to add a signal obtained by mixing the first mixed signal and the second local oscillator signal, and a signal obtained by mixing the second mixed signal and the third local oscillator signal, to output an intermediate frequency signal having an intermediate frequency that is a difference between the first and second frequencies. | 01-14-2010 |
20100007381 | DRIVE SIGNAL OUTPUT CIRCUIT AND MULTI-CHIP PACKAGE - Input signals from a signal input terminal are input to a logic circuit, and a control signal corresponding to states of the input signals is output. The control signal is supplied to an output circuit, a plurality of transistors are controlled, and a drive signal is output corresponding to states of the transistors. In the logic circuit, the logic is switched according to the polarity of the setting signal which is input to a logic setting terminal, and a control signal corresponding to the input signal is changed. | 01-14-2010 |
20100001847 | NONCONTACT TRANSMISSION DEVICE - A noncontact transmission device | 01-07-2010 |
20100001695 | Charging Control Apparatus and Charging Apparatus - A charging control apparatus comprising: a voltage control unit in a charging apparatus configured to control generation of an output voltage and a power supply voltage, the charging apparatus being an apparatus configured to generate, from a voltage of an input power supply applied through a relay, the output voltage for charging a battery and the power supply voltage for control; and a relay control unit operated by the power supply voltage, the relay control unit configured to drive the relay so as to stop applying the voltage of the input power supply to the charging apparatus, when detecting a standby state in which the battery is not being charged, and drive the relay so as to increase the power supply voltage by applying the voltage of the input power supply to the charging apparatus, when the power supply voltage decreases below a predetermined level. | 01-07-2010 |
20090325485 | COMMUNICATION SYSTEM AND RECEIVER USED IN COMMUNICATION SYSTEM - A communication system is provided comprising an environment-side electrode and a living body-side electrode sandwiching an insulating layer and electrically insulated from each other, a grounding electrode which is electrically connected to the environment-side electrode, and a reception amplifier which amplifies a potential difference between the environment-side electrode and the living body-side electrode, wherein the grounding electrode has a side surface section which extends along a vertical direction. | 12-31-2009 |
20090322302 | Power Supply Circuit and Electronic Equipment - A power supply circuit comprising: a voltage generating circuit configured to generate an output voltage of a target level from an input voltage; an overcurrent protection circuit configured to control the voltage generating circuit so as to stop an output current, when a level of the output current generated at a time of generating the output voltage is greater than a reference level; and a reference-level change circuit configured to change the reference level in the overcurrent protection circuit to be at a second level higher than a first level from the first level for a predetermined period, when the overcurrent protection circuit detects that the level of the output current is greater than the reference level. | 12-31-2009 |
20090321903 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - This invention is directed to offer a semiconductor device in which a cavity space is easily provided in a specific region when a supporting member is bonded to a semiconductor substrate through an adhesive layer, and its manufacturing method. A resist layer is applied to an entire top surface of the semiconductor substrate | 12-31-2009 |
20090315618 | CURRENT MIRROR CIRCUIT - A current mirror circuit includes a first transistor, a plurality of second transistors whose bases are connected to a base of the first transistor, and a compensation transistor having a gate connected to a collector of the first transistor, a source and a back gate connected to the base of the first transistor and the bases of the plurality of second transistors, and a drain connected to a power source. The first transistor and the plurality of second transistors are bipolar transistors. The compensation transistor is a MOS-type transistor. A current corresponding to a current flowing in the first transistor is permitted to flow in the plurality of second transistors. | 12-24-2009 |
20090310426 | SEMICONDUCTOR MEMORY DEVICE - There is offered a semiconductor memory device that has reduced number of high withstand voltage transistors so as to suppress an increase in a die size. A second transistor of N channel type is connected between a word line and a decoder circuit. A control signal from a control circuit is applied to a gate of the second transistor. When an output of the decoder circuit is at a low level, the word line is in a non-selected state, and a high voltage from a switching circuit is not outputted to the word line. Instead, the word line is provided with the ground voltage (=non-erasing voltage) from the decoder circuit through the second transistor. | 12-17-2009 |
20090309708 | COMMUNICATION SYSTEM AND RECEIVER USED IN COMMUNICATION SYSTEM - A communication system is provided comprising a living body-side electrode which primarily capacitively couples with a living body, an environment-side electrode which primarily capacitively couples with an external environment, and a circuit board on which a circuit which processes a signal which is output from at least one of the living body-side electrode and the environment-side electrode is mounted, wherein the circuit board is not placed between the living body-side electrode and the environment-side electrode. | 12-17-2009 |
20090309630 | TERNARY VALVE INPUT CIRCUIT - A pull-up switching device for controlling connection and non-connection of an input terminal IN and a first supply VDD and a pull-down switching device for controlling connection and non-connection of the input terminal IN and a second supply VSS are provided. The pull-up switching device and the pull-down switching device are operated exclusively on and off in time division to hold and output the state of the input terminal during each operating state from the two output terminals. | 12-17-2009 |
20090309194 | MESA TYPE SEMICONDUCTOR DEVICE AND MAUFACTURING METHOD THEREOF - This invention is directed to solving problems with a mesa type semiconductor device, which are deterioration in a withstand voltage and occurrence of a leakage current caused by reduced thickness of a second insulation film on an inner wall of a mesa groove corresponding to a PN junction, and offers a mesa type semiconductor device of high withstand voltage and high reliability and its manufacturing method. After the mesa groove is formed by dry-etching, wet-etching with an etching solution including hydrofluoric acid and nitric acid is further applied to a sidewall of the mesa groove to form an overhang made of the first insulation film above an upper portion of the mesa groove. The overhang serves as a barrier to prevent the second insulation film formed in the mesa groove and on the first insulation film around the mesa groove beyond an area of the overhang from flowing toward a bottom of the mesa groove due to an increased fluidity resulting from a subsequent thermal treatment. As a result, the inner wall of the mesa groove corresponding to the PN junction is covered with the second insulation film thick enough to secure a desired withstand voltage and to reduce a leakage current. | 12-17-2009 |
20090309193 | MESA TYPE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - Problems with a conventional mesa type semiconductor device, which are deterioration in a withstand voltage and occurrence of a leakage current caused by reduced thickness of an insulation film on an inner wall of a mesa groove corresponding to a PN junction, are solved using an inexpensive material, and a mesa type semiconductor device of high withstand voltage and high reliability is offered together with its manufacturing method. A stable protection film made of a thermal oxide film is formed on the inner wall of the mesa groove in the mesa type semiconductor device to cover and protect the PN junction, and an insulation film having negative electric charges is formed to fill a space in the mesa groove covered with the thermal oxide film so that an electron accumulation layer is not easily formed at an interface between an N | 12-17-2009 |
20090303800 | NON-VOLATILE MEMORY CONTROL CIRCUIT - An efficient erasure is performed. The voltage of a source line SL is manipulated in units of a sector comprising a plurality of memory cells. An erase command is received for the desired memory cells to be erased in a plurality of word line WL units arranged within a sector and all data within the sector, which includes the desired memory cells to be erased, is saved in a separate memory. Erasure is then performed for the entire sector, and among the saved data the data outside the desired memory cells to be erased is returned to the memory cells. | 12-10-2009 |
20090302329 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - The invention is directed to providing a smaller semiconductor device formed as an optical sensor including a light receiving portion and a light emitting portion. A light receiving portion and a light emitting portion are disposed on a front surface of a semiconductor substrate for forming a semiconductor die, and a supporting body is attached to these so as to face these with an adhesive being interposed therebetween. A first opening exposing the light receiving portion from the front side of the supporting body is provided, and in a separated position therefrom, a second opening exposing the light emitting portion from the front side of the supporting body is provided. A first electrode and a second electrode are further disposed on the front surface of the semiconductor substrate, and bump electrodes electrically connected to these are disposed on the back surface of the semiconductor substrate. | 12-10-2009 |
20090284886 | POWER AMPLIFIER - A power amplifier for driving a load connected to an output terminal having an output transistor connected in parallel with a corresponding current detection path between the output terminal and a power supply. The detection path includes a switching device and a resistor connected in series, the switching device is turned on only during an on-state period of the corresponding output transistor, and the presence or absence of over-current generation is detected at the output transistors on the basis of a sensing signal obtained from a point connecting the switching device and the resistor. When over-current is detected, the operation of the output transistors is stopped to protect the amplifier. | 11-19-2009 |
20090278200 | TRANSISTOR, SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - An ON resistance of a trench gate type transistor and a withstand voltage of a planar type transistor are optimized at the same time. Each of first and second regions of a semiconductor layer is formed by epitaxial growth on each of first and second regions of a semiconductor substrate, respectively. A first buried layer is formed between the first region of the semiconductor substrate and the first region of the semiconductor layer, while a second buried layer is formed between the second region of the semiconductor substrate and the second region of the semiconductor layer. The first buried layer is formed of an N | 11-12-2009 |
20090261418 | INSULATED GATE SEMICONDUCTOR DEVICE - A protection diode group includes multiple protection diodes connected to each other in parallel. A total junction area average of the protection diode group is set to a value large enough to guarantee a desired electrostatic discharge tolerance. By setting the total junction area average to be equal to a junction area average of a conventional structure, the occupation area of the protection diode group on the chip is reduced while the ESD tolerance is made equal to a conventional ESD tolerance. | 10-22-2009 |
20090261410 | DMOS TRANSISTOR - This invention provides a DMOS transistor that has a reduced ON resistance and is prevented from deterioration in strength against an electrostatic discharge. An edge portion of a source layer of the DMOS transistor is disposed so as to recede from an inner corner portion of a gate electrode. A silicide layer is structured so as not to extend out of the edge portion of the source layer. That is, although the silicide layer is formed on a surface of the source layer, the silicide layer is not formed on a surface of a portion of a body layer, which is exposed between the source layer and the inner corner portion of the gate electrode. As a result, the strength against the electrostatic discharge can be improved, because an electric current flows almost uniformly through whole of the DMOS transistor without converging. | 10-22-2009 |
20090254727 | Digital Data Reproducing Apparatus and Recording Medium - A digital data reproducing apparatus comprising: a reading unit configured to read digital data stored in a recording medium at a speed higher than a reproduction speed to store the digital data into a first memory; an encoding unit configured to store encoded data obtained by encoding the digital data read by the reading unit into a second memory; a reproducing unit configured to reproduce the digital data stored in the first memory at the reproduction speed; and a transferring unit configured to transfer the encoded data stored in the second memory into a third memory different from the second memory. | 10-08-2009 |
20090250759 | SEMICONDUCTOR DEVICE - A breakdown voltage of a clamp diode can be reduced while a leakage current is suppressed. A P | 10-08-2009 |
20090245543 | AMPLIFYING ELEMENT AND MANUFACTURING METHOD THEREOF - An amplifier integrated circuit element or J-FET is used for impedance conversion and amplification of ECM. The amplifier integrated circuit element has advantages of allowing an appropriate gain to be set by adjusting a circuit constant, and of producing a higher gain than the J-FET; but also has a problem of having a complicated circuit configuration and requiring high costs. Using only the J-FET has also problems of outputting a voltage insufficiently amplified and producing a low gain. Against this background, provided is a discrete element in which: a J-FET and a bipolar transistor are integrated on one chip; a source region of the J-FET is connected to a base region of the bipolar transistor; and a drain region of the J-FET is connected to a collector region of the bipolar transistor. Accordingly, an ECM amplifying element with high input impedance and low output impedance can be achieved. | 10-01-2009 |
20090243906 | DIFFERENTIAL COMPARATOR, AND PIPELINE TYPE A/D CONVERTER EQUIPPED WITH THE SAME - In some examples, a differential comparator includes a differential amplifier configured to output differential output signals, a first switch portion configured to input the differential output signals from the differential amplifier and output the differential output signals from output terminals while alternatively changing over the output terminals, a latch portion configured to update and latch the differential output signals from the output terminals of the first switch portion, and a second switch portion configured to input output signals from the latch portion and output the latched output signals. The first switch portion and the second switch portion are changed over complementarily so that the differential output signals from the differential amplifier are always outputted from the same first and second output terminals of the second switch portion respectively. | 10-01-2009 |
20090243755 | NOISE FILTER AND NOISE-FILTER-INCORPORATED AMPLIFIER CIRCUIT - A ladder LPF includes a first capacitor formed of a transistor in which two terminals out of three are diode-connected, and a second capacitor formed by connecting a pn junction capacitor and an insulating capacitor in parallel. In the second capacitor, the pn junction capacitor formed in a semiconductor layer and the insulating capacitor formed in a surface of the semiconductor layer are connected to each other in parallel so as to almost overlap each other. Accordingly, the area in the LPF occupied by the second capacitor can be prevented from increasing even when its capacitance value is increased. Moreover, having the snap-back characteristics, the first capacitor can protect the second capacitor having the insulating capacitor from ESD. As a result, what can be obtained is a compact noise filter having high RFI removal characteristics and accomplishing high resistance to ESD. | 10-01-2009 |
20090243557 | Phase Synchronization Circuit - A phase synchronization circuit comprising: a charging/discharging-circuit to charge/discharge a capacitor in accordance with a drive-signal, charging and/or discharging current-values of the capacitor being settable; an oscillation-circuit to output an oscillation-signal having a frequency corresponding to a charging-voltage; a drive-circuit to output as the drive-signal a first drive-signal for matching charging and discharging periods when a phase-difference and the oscillation-signal is smaller than a predetermined phase-difference and reducing the phase-difference when the phase-difference is greater than the predetermined phase-difference; and a setting-circuit to receive setting-data for setting the charging and/or discharging current-values, hold the setting-data, and set the charging and/or discharging current-values, based on the setting-data, the drive-circuit outputting as the drive-signal a second drive-signal for matching charging and discharging periods, when receiving an adjustment-instruction-signal, the setting-circuit holding the setting-data for rendering at a constant level the charging-voltage of the capacitor charged/discharged in accordance with the second drive-signal. | 10-01-2009 |
20090243534 | Motor Drive Circuit - A motor drive circuit comprising: a triangle wave generation circuit configured to charge/discharge a capacitor with a charging/discharging current having a current amount corresponding to an amplitude control voltage for controlling an amplitude of an oscillation voltage that varies in a triangle wave shape, and to output a charging voltage of the capacitor as the oscillation voltage; a pulse signal generation circuit configured to generate a pulse signal having a duty ratio corresponding to a level of a speed control voltage for controlling a rotational speed of a motor, based on a comparison result between the speed control voltage and the oscillation voltage output from the triangle wave generation circuit; and a drive circuit configured to intermittently drive a motor coil based on the pulse signal. | 10-01-2009 |
20090238382 | AUDIO REPRODUCTION SYSTEM - The audio reproduction system amplifies and reproduces both a digital audio signal and an analog audio signal. After delta sigma modulation by a ΔΣ modulator, the digital audio signal is pulse width modulated by a first PWM converter and supplied to a selector. The analog audio signal is compared with a PWM carrier signal by a second PWM converter, converted to a PWM signal, and supplied to the selector. A signal selected by the selector is then amplified by a class D amplifier. | 09-24-2009 |
20090237159 | OUTPUT STAGE CIRCUIT - A PWM signal drives a pair of output transistors connected in series between a supply line and ground so that a push-pull current is output toward a speaker via a coil from a point connecting both output transistors. A current limiting resistor has one end connected to the supply line and between the other end and ground is provided a control transistor. Furthermore, a comparator compares the supply line voltage and a reference voltage and turns on the control transistor when the supply line voltage is higher than the reference voltage in the comparison result thereof. | 09-24-2009 |
20090231258 | Liquid Crystal Driving Device - A liquid crystal driving device comprising: a scanning line driving circuit including, for each of scanning lines, a first series circuit having a 1st-PMOSFET/1st-NMOSFET connected in series, both ends thereof connected respectively to points of 1st-potential/2nd-potential, configured to receive at a 1st-PMOSFET's gate a binary signal having two levels not higher than 1st-potential's level and higher than 2nd-potential's level, a second series circuit having a 2nd-PMOSFET/2nd-NMOSFET connected in series, both ends thereof connected respectively to points of 3rd-potential (>1st-potential)/2nd-potential, a 2nd-NMOSFET's gate connected to a connection point of the 1st-PMOSFET/1st-NMOSFET, and an output buffer circuit configured to buffer and output a voltage of a connection point of the 2nd-PMOSFET/2nd-NMOSFET, a 1st-NMOSFET's gate applied with a 1st-bias-voltage adapted such that the 2nd-NMOSFET is turned ON-or-OFF in response to the binary signal's level, a 2nd-PMOSFET's gate applied with a 2nd-bias-voltage adapted such that the 2nd-PMOSFET becomes higher in on-resistance than the 2nd-NMOSFET. | 09-17-2009 |
20090230515 | INSULATED GATE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A well region in which an insulated gate semiconductor element is formed is a diffusion region, and an impurity concentration of the well region is lower toward its bottom portion. This leads to a problem of increased resistance. Therefore, particularly, an insulated gate semiconductor element having an up-drain structure has a problem of increased on-resistance. A p type well region is formed by stacking two p type impurity regions on one another. The p type impurity regions are allowed to serve as the p type well region by sequentially stacking n type semiconductor layers, on one another, having p type impurities implanted into their surfaces and simultaneously diffusing the impurities by heat treatment. In this way, it is possible to obtain the p type well region in which an impurity concentration sufficient to secure a desired breakdown voltage is maintained approximately uniform up to a desired depth. | 09-17-2009 |
20090230393 | DIODE - In a pn junction diode having a conductivity modulating element provided on a first principal surface of a semiconductor substrate, when an impurity concentration of a p type impurity region is lowered to shorten a reverse recovery time, hole injection is suppressed, thereby causing a problem that a forward voltage value is increased at a certain current point. Moreover, introduction of a life time killer to shorten the reverse recovery time leads to a problem of increased leak current. On an n− type semiconductor layer that is a single crystal silicon layer, a p type polycrystalline silicon layer (p type polysilicon layer) is provided. Since the polysilicon layer has more grain boundaries than the single crystal silicon layer, an amount of holes injected into the n− type semiconductor layer from the p type polysilicon layer in forward voltage application can be suppressed. Moreover, a natural oxide film formed between the n− type semiconductor layer and the p type polysilicon layer in formation of the p type polysilicon layer can also reduce the amount of holes injected into the n− type semiconductor layer. Thus, a time to extract the holes in reverse voltage application, that is, a reverse recovery time can be shortened without using a life time killer. | 09-17-2009 |
20090224373 | Integrated circuit and method for manufacturing same - When an integrated circuit having an interlayer insulation film built up on top of a wiring layer is subjected to a heat treatment, it is unlikely that a void formed in the interlayer insulation film will rupture in a portion wherein are connected a narrow gap between wirings and a wide open part contiguous therewith. A corner part of a wiring positioned at a portion where a gap and an open part are connected is chamfered, and an end part of the gap is shaped so as to widen toward the open part. Providing the widening end part in the gap thus mitigates any discontinuity in the built up interlayer insulation film between the gap and the open part. As a result, the interlayer insulation film does not readily seal off an end of a void formed in the gap. | 09-10-2009 |
20090218542 | ANISOTROPIC SILICON ETCHANT COMPOSITION - An etchant composition contains (a) an alkaline compound mixture of an organic alkaline compound and inorganic alkaline compound and (b) a silicon-containing compound. The organic alkaline compound is composed of one or more ingredients from quaternary ammonium hydroxide and ethylenediamine. The inorganic alkaline compound is composed of one or more ingredients from sodium hydroxide, potassium hydroxide, ammonia and hydrazine. The silicon-containing inorganic compound is composed of one or more ingredients from metal silicon, fumed silica, colloidal silica, silica gel, silica sol, diatomaceous earth, acid clay and activated clay, and the silicon-containing organic compound is composed of one or more ingredients from quaternary ammonium salts of alkyl silicate and quaternary ammonium salts of alkyl silicic acid. | 09-03-2009 |
20090212426 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - In a semiconductor device, a region under a pad electrode with a bump can be utilized efficiently and a large amount of force is prevented from applying locally to a semiconductor substrate under the bump when the semiconductor device is mounted. A first layer metal wiring is formed on the semiconductor substrate. A pad electrode is formed on the first layer metal wiring through an interlayer insulation film. The pad electrode is connected with the first layer metal wiring through a via hole that is formed in the interlayer insulation film. A protection film is formed on the pad electrode. The protection film has an opening to expose the pad electrode and an island-shaped protection film formed in the opening. An Au bump connected with the pad electrode through the opening in the protection film is formed on the pad electrode. The via hole is formed under the island-shaped protection film, and incompletely filled with a portion of the pad electrode. | 08-27-2009 |
20090206376 | SEMICONDUCTOR DEVICE - A conventional semiconductor device has a problem that, when a vertical PNP transistor as a power semiconductor element is used in a saturation region, a leakage current into a substrate is generated. In a semiconductor device of the present invention, two P type diffusion layers as a collector region are formed around an N type diffusion layer as a base region. One of the P type diffusion layers is formed to have a lower impurity concentration and a narrower diffusion width than the other P type diffusion layer. In this structure, when a vertical PNP transistor is turned on, a region where the former P type diffusion layer is formed mainly serves as a parasite current path. Thus, a parasitic transistor constituted of a substrate, an N type buried layer and a P type buried layer is prevented from turning on, and a leakage current into the substrate is prevented. | 08-20-2009 |
20090200973 | Motor drive circuit - A motor-drive circuit comprising: a current-passage-control circuit to perform ON/OFF control of a drive transistor connected to a motor coil to pass current through the motor coil; an overcurrent-state-detection circuit to detect whether current passing through the drive transistor is in an overcurrent state where the current exceeds a predetermined threshold value; a charging and discharging circuit to start charging a capacitor in response to detecting the overcurrent state by the overcurrent-state-detection circuit and subsequently discharge the capacitor in response to not detecting the overcurrent state; and an overcurrent-protection-control circuit to stop the ON/OFF control to turn off the drive transistor, for an elapsed charging period for a charging voltage of the capacitor at a predetermined voltage to exceed a threshold voltage, and determine whether to perform such an overcurrent-protection-control as to turn off the drive transistor by detection of the overcurrent state, after the charging period has elapsed. | 08-13-2009 |
20090197378 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE - A method of fabricating a semiconductor device includes a first step of forming a defect suppression film suppressing increase in a defect due to implantation of an impurity on a semiconductor substrate, a second step of forming an active region on a surface of the semiconductor substrate by implanting the impurity through the defect suppression film, a third step of removing the defect suppression film and a fourth step of forming an interface state suppression film suppressing increase in an interface state density of the active region on the active region. | 08-06-2009 |
20090189257 | MESA TYPE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A mesa type semiconductor device and its manufacturing method are offered to increase a withstand voltage as well as reducing a leakage current. An N | 07-30-2009 |
20090184716 | Battery Voltage Detection Circuit - A battery-voltage detection circuit comprising: a first-capacitor; an operational-amplifier; a second-capacitor; a voltage-application-circuit to sequentially apply one and the other-battery-terminal-voltages to the other-first-capacitor-end; a discharge circuit to allow the second-capacitor to discharge before the other-battery-terminal-voltage is applied to the other-first-capacitor-end; a constant current circuit to output a constant-current causing predetermined-speed-discharge of electric charge accumulated in the second-capacitor in response to a discharge-start-signal input after voltage is applied to the other-first-capacitor-end; a comparator; and a measurement-circuit to measure a time-period from a time when the discharge-start-signal is input until a time when an comparator-output-signal changes to one logic level as a time-period corresponding to a battery-voltage, at least one of the operational-amplifier and the comparator being provided with an offset so that the comparator-output-signal changes to the one logic level when voltage applied to the other operational-amplifier input terminal is at a predetermined level lower than a reference-voltage level. | 07-23-2009 |
20090174066 | SEMICONDUCTOR DEVICE - In a multi-chip package semiconductor device, a drive chip having an analog circuit and a logic chip having a digital circuit are mounted within the same package. The driver chip includes a logic-chip power-supply circuit that makes up a logic-chip power supply for the logic chip and a group of operational amplifiers that amplify detection signals from a plurality of sensors. The driver chip has the shape of a square as a whole, and the plurality of operational amplifiers and the logic-chip power-supply circuit are disposed in diagonally opposed positions. | 07-09-2009 |
20090167219 | Motor Drive Circuit, Fan Motor, Electronic Device, and Notebook Personal Computer - A motor drive circuit includes: a pulse generation circuit configured to generate a pulse signal whose duty ratio of one logic level is increased as a drive voltage is increased in accordance with a target rotation speed of a motor; and a drive control circuit that configured to drive the motor with the drive voltage using a duty ratio higher than the duty ratio of the pulse signal when the motor starts rotating from the stopped state, and configured to drive the motor with the drive voltage during a period when the pulse signal is at the one logic level after the motor starts rotating, based on a rotation signal corresponding to the rotation of the motor. | 07-02-2009 |
20090166895 | CIRCUIT SUBSTRATE, CIRCUIT DEVICE AND MANUFACTURING PROCESS THEREOF - A semiconductor device that includes a metal substrate including a top surface, a bottom surface and four side surfaces, a conductive pattern insulated from the metal substrate, and a semiconductor element mounted on and electrically connected to the conductive pattern. The top surface is insulated. Each of the side surfaces of the metal substrate includes a first inclining side surface and a second inclining side surface so as to form a convex shape protruding outwardly between the top surface and the bottom surface of the metal substrate, and the first inclining side surfaces of a pair of two opposing side surfaces are smaller than corresponding first inclining side surfaces of another pair of two opposing side surfaces. | 07-02-2009 |
20090161237 | Image stabilization control circuit - A image stabilization control circuit for an image capturing device, wherein a gyro-equalizer ( | 06-25-2009 |
20090160962 | VIBRATION PREVENTION CONTROL CIRCUIT OF IMAGING DEVICE - A vibration prevention control circuit is provided that comprises at least one analog-to-digital converter circuit which samples and converts an output signal of a vibration detection element which detects vibration of an imaging device and an output signal of a position detection element which detects a position of an optical component, into digital signals, a vibration component processor that processes the output signal of the vibration detection element which is digitized by the analog-to-digital converter circuit, a down-sampling unit that down-samples the output signal of the vibration detection element which is processed by the vibration component processor, and a servo circuit that generates a control signal which drives the optical component, based on the output signal of the vibration detection element which is output from the down-sampling unit and the output signal of the position detection element which is digitized by the analog-to-digital converter circuit. | 06-25-2009 |
20090160961 | AMPLIFIER CIRCUIT - In a first operational amplifier, an input signal is input to the negative input terminal, a reference voltage is input to the positive input terminal, a feedback path from the output terminal to the negative input terminal is formed, and the input signal is amplified by a predetermined amplification factor. In a second operational amplifier, an output from the first operational amplifier is input to the positive input terminal, the reference voltage is input to the negative input terminal, and a pair of outputs having opposite polarities to each other and used for performing BTL drive of a load are obtained at the output terminal. Using the above arrangement, a low-frequency signal can be amplified. | 06-25-2009 |
20090160960 | IMAGE STABILIZATION CONTROL CIRCUIT FOR IMAGING APPARATUS - A vibration control equalizer for generating a vibration signal for determining a driving amount for an optical component on the basis of an output signal of a vibration detector for detecting vibration of an imaging apparatus, a position control equalizer for calculating a position signal for determining a driving amount for the optical component on the basis of an output signal of a position detector for detecting position of the optical component, and an internal CPU for controlling the vibration control equalizer and the position control equalizer are provided, and compensation for the output signal of the position detector is performed by the internal CPU. | 06-25-2009 |
20090160958 | IMAGE STABILIZATION CONTROL CIRCUIT AND IMAGING DEVICE HAVING IMAGE STABILIZATION CONTROL CIRCUIT - A image stabilization control circuit is provided that comprises at least one analog-to-digital converter circuit that converts an output signal of a vibration detection element which detects vibration of an imaging device, and an output signal of a position detection element which detects a position of an optical component or an imaging element, into digital signals, and a logic circuit that generates a control signal which drives the optical component or the imaging element, based on the output signal of the vibration detection element which is digitized by the analog-to-digital converter circuit and the output signal of the position detection element which is digitized by the analog-to-digital converter circuit, wherein an offset value and an amplitude for the output signal of the position detection element are adjusted. | 06-25-2009 |
20090160955 | VIBRATION PREVENTION CONTROL CIRCUIT OF IMAGING DEVICE - A vibration prevention control circuit is provided, comprising at least one analog-to-digital converter circuit that converts an output signal of a vibration detection element which detects vibration of an imaging device, and an output signal of a position detection element which detects a position of an optical component, into digital signals, and a logic circuit that generates a control signal which drives the optical component, based on the output signal of the vibration detection element which is digitized by the analog-to-digital converter circuit and the output signal of the position detection element which is digitized by the analog-to-digital converter circuit, wherein a phase delay circuit (all-pass filter) is provided that delays a phase of the output signal of the vibration detection element without changing an intensity in a predetermined frequency band and outputs the processed signal. | 06-25-2009 |
20090160954 | IMAGE STABILIZATION CONTROL CIRCUIT AND IMAGING DEVICE HAVING IMAGE STABILIZATION CONTROL CIRCUIT - A image stabilization control circuit is provided which comprises at least one analog-to-digital converter circuit which converts an output signal of a vibration detection element which detects vibration of an imaging device and an output signal of a position detection element which detects a position of an optical component, into digital signals, and a logic circuit which generates a control signal which drives the optical component based on the output signal of the vibration detection element which is digitized by the analog-to-digital converter circuit and the output signal of the position detection element which is digitized by the analog-to-digital converter circuit, wherein an abnormality of the vibration detection element is judged based on an amplitude of the output signal from the vibration detection element which is converted into the digital signal by the analog-to-digital converter circuit. | 06-25-2009 |