Roth & Rau AG Patent applications |
Patent application number | Title | Published |
20150101659 | HETERO-CONTACT SOLAR CELL AND METHOD FOR THE PRODUCTION THEREOF - A hetero-contact solar cell has a front side provided for an incidence of solar radiation. The solar cell has an absorber of a crystalline semiconductor material of a first conductivity type, an amorphous semiconductor layer of the first conductivity type doped more highly than the absorber and an electrically conductive, transparent front side conduction layer provided on the amorphous semiconductor layer. A front side contact is provided on the solar cell and has spaced-apart contact structures. An emitter of a second conductivity type opposite to the first conductivity type is provided on a back side. A back side contact is arranged on the back side. The emitter-related absorption losses of the solar cells can be eliminated by the back side contact having a back side contact layer extending over the surface of the back side, and the front side conduction layer containing a specific resistance from 7×10 | 04-16-2015 |
20130243966 | METHOD AND DEVICE FOR ION IMPLANTATION - In an ion implantation device and a method for the ion implantation of a substrate, a plasma having an ion density of at least 10 | 09-19-2013 |
20120304933 | PARALLEL PLATE REACTOR FOR UNIFORM THIN FILM DEPOSITION WITH REDUCED TOOL FOOT-PRINT - A capacitive-coupled parallel plate plasma enhanced chemical vapor deposition reactor includes a gas distribution unit that is integrated in an RF electrode and is formed with a gas outlet. The parallel plate reactor is configured so that layers with high thickness homogeneity and quality can be produced. The capacitively coupled parallel plate plasma enhanced vapor deposition reactor has gas distribution unit with a multiple-stage showerhead constructed in such a way that it provides an independent adjustment of gas distribution and gas emission profile of the gas distribution unit. | 12-06-2012 |
20120279448 | DEVICE FOR GENERATING PLASMA BY MEANS OF MICROWAVES - A device is provided for generating plasma by microwaves for CVD coating a substrate having a vacuum container into which a reaction gas can be fed and an electrical conductor arranged therein which is connected on each of both ends thereof to a device for coupling microwaves and to a voltage source with which a difference of potential can generated between the electrical conductor and the surrounding vacuum container. The electrical conductor is electrically insulated from the devices for coupling microwaves. The electrical conductor has a rod-shaped design or a curved run. The electrical conductor is connected to the voltage source via a feedthrough filter. The device for coupling microwaves expands in a funnel shape toward the electrical conductor and is partially or completely filled by a dielectric material. The device for coupling microwaves has groove-shaped recesses running along a circumference. | 11-08-2012 |
20110124144 | SUBSTRATE PROCESSING SYSTEM AND SUBSTRATE PROCESSING METHOD - A substrate processing apparatus includes an evacuatable process chamber configured to receive a substrate carrier having at least one substrate, a plasma generating module, a gas feed, a gas discharge and a vapor etching module provided in the process chamber. A substrate processing method includes introducing a substrate carrier including at least one substrate into an evacuatable process chamber, generating a plasma in a plasma process using a plasma generating module in a gas or a gas mixture, performing a vapor etching of the at least one substrate before, after or alternatingly with the plasma process and performing at least one of a coating, etching, surface modification and cleaning of the substrate. | 05-26-2011 |
20090242131 | ECR PLASMA SOURCE - The invention relates to an ECR plasma source comprising a coaxial microwave supply line with an internal conductor and an external conductor, wherein the internal conductor with one end as the antenna passes through a vacuum flange in insulated fashion, which vacuum flange closes off an opening in the wall to the plasma space. A multipole magnet arrangement is provided coaxially with respect to the microwave supply line and its magnetic fields pass through the vacuum flange and form an annular-gap magnetic field in the plasma space coaxially with respect to the antenna. The antenna protrudes directly into the plasma space and, in comparison with the internal conductor, it has a radially larger antenna head at which an underside is provided parallel to the vacuum flange in such a way that an annular gap is formed between the vacuum flange and the underside and that the plasma space is delimited coaxially with respect to the antenna and radially outside the annular-gap magnetic field by means of a shield, whose end side facing away from the vacuum flange defines the plasma outlet opening. | 10-01-2009 |