RAMBUS INC. Patent applications |
Patent application number | Title | Published |
20160079993 | INTEGRATED CIRCUIT HAVING A MULTIPLYING INJECTION-LOCKED OSCILLATOR - Methods and apparatuses featuring a multiplying injection-locked oscillator are described. Some embodiments include a pulse-generator-and-injector and one or more injection-locked oscillators. The outputs of the pulse-generator-and-injector can be injected into corresponding injection points of an injection-locked oscillator. In embodiments that include multiple injection-locked oscillators, the outputs of each injection-locked oscillator can be injected into the corresponding injection points of the next injection-locked oscillator. Some embodiments reduce deterministic jitter by dynamically modifying the loop length of an injection-locked oscillator, and/or by using a duty cycle corrector, and/or by multiplexing/blending the outputs from multiple delay elements of an injection-locked oscillator. | 03-17-2016 |
20160003994 | PHASE GRATINGS WITH ODD SYMMETRY FOR HIGH-RESOLUTION LENSLESS OPTICAL SENSING - Image-sensing devices include odd-symmetry gratings that cast interference patterns over a photodetector array. Grating features offer considerable insensitivity to the wavelength of incident light, and also to the manufactured distance between the grating and the photodetector array. Photographs and other image information can be extracted from interference patterns captured by the photodetector array. Images can be captured without a lens, and cameras can be made smaller than those that are reliant on lenses and ray-optical focusing. | 01-07-2016 |
20150378740 | SELECTIVELY PERFORMING A SINGLE CYCLE WRITE OPERATION WITH ECC IN A DATA PROCESSING SYSTEM - A method includes providing a data processor having an instruction pipeline, where the instruction pipeline has a plurality of instruction pipeline stages, and where the plurality of instruction pipeline stages includes a first instruction pipeline stage and a second instruction pipeline stage. The method further includes providing a data processor instruction that causes the data processor to perform a first set of computational operations during execution of the data processor instruction, performing the first set of computational operations in the first instruction pipeline stage if the data processor instruction is being executed and a first mode has been selected, and performing the first set of computational operations in the second instruction pipeline stage if the data processor instruction is being executed and a second mode has been selected. | 12-31-2015 |
20150363107 | MEMORY MODULE AND SYSTEM SUPPORTING PARALLEL AND SERIAL ACCESS MODES - A memory module can be programmed to deliver relatively wide, low-latency data in a first access mode, or to sacrifice some latency in return for a narrower data width, a narrower command width, or both, in a second access mode. The narrow, higher-latency mode requires fewer connections and traces. A controller can therefore support more modules, and thus increased system capacity. Programmable modules thus allow computer manufacturers to strike a desired balance between memory latency, capacity, and cost. | 12-17-2015 |
20150333760 | INTEGRATED CIRCUIT COMPRISING CIRCUITRY TO DETERMINE SETTINGS FOR AN INJECTION-LOCKED OSCILLATOR - Embodiments of an integrated circuit (IC) comprising circuitry to determine settings for an injection-locked oscillator (ILO) are described. In some embodiments, an injection signal is generated based on a first clock edge of a reference clock signal, and is injected into an ILO. Next, one or more output signals of the ILO are sampled based on a second clock edge of the reference clock signal, and settings for the ILO are determined based on the samples. In some embodiments, a sequence of two or more time-to-digital (TDC) codes is generated based on a reference clock signal and a free-running ILO. In some embodiments, the TDC circuitry that is already present in a delay-locked loop is reused for determining the sequence of two or more TDC codes. The ILO settings can then be determined based on the sequence of two or more TDC codes. | 11-19-2015 |
20150332746 | MEMORY DEVICE COMPRISING PROGRAMMABLE COMMAND-AND-ADDRESS AND/OR DATA INTERFACES - A memory device comprising a programmable command-and-address (CA) interface and/or a programmable data interface is described. In an operational mode, two or more CA interfaces may be active. In another operational mode, at least one, but not all, CA interfaces may be active. In an operational mode, all of the data interfaces may be active. In another operational mode, at least one, but not all, data interfaces may be active. The memory device can include circuitry to select: an operational mode; a sub-mode within an operational mode; one or more CA interfaces as the active CA interface(s); a main CA interface from multiple active CA interfaces; and/or one or more data interfaces as the active data interfaces. The circuitry may perform these selection(s) based on one or more bits in one or more registers and/or one or more signals received on one or more pins. | 11-19-2015 |
20150331732 | MEMORY DEVICE HAVING STORAGE FOR AN ERROR CODE CORRECTION EVENT COUNT - An integrated circuit memory device is disclosed. The memory device includes at least one group of storage cells. Logic derives a count of error code correction events for each of the at least one group of storage cells. Storage stores the count. A memory control interface selectively communicates the count to a memory controller. | 11-19-2015 |
20150305141 | STRUCTURE FOR DELIVERING POWER - A structure for delivering power is described. In some embodiments, the structure can include conductors disposed on two or more layers. Specifically, the structure can include a first set of interdigitated conductors disposed on a first layer and oriented substantially along an expected direction of current flow. At least one conductor in the first set of interdigitated conductors may be maintained at a first voltage, and at least one conductor in the first set of interdigitated conductors may be maintained at a second voltage, wherein the second voltage is different from the first voltage. The structure may further include a conducting structure disposed on a second layer, wherein the second layer is different from the first layer, and wherein at least one conductor in the conducting structure is maintained at the first voltage. | 10-22-2015 |
20150304141 | Adaptive Equalization Using Correlation of Edge Samples with Data Patterns - An integrated receiver supports adaptive receive equalization. An incoming bit stream is sampled using edge and data clock signals derived from a reference clock signal. A phase detector determines whether the edge and data clock signals are in phase with the incoming data, while some clock recovery circuitry adjusts the edge and data clock signals as required to match their phases to the incoming data. The receiver employs the edge and data samples used to recover the edge and data clock signals to note the locations of zero crossings for one or more selected data patterns. The pattern or patterns may be selected from among those apt to produce the greatest timing error. Equalization settings may then be adjusted to align the zero crossings of the selected data patterns with the recovered edge clock signal. | 10-22-2015 |
20150304136 | Partial Response Receiver And Related Method - A multi-phase partial response equalizer circuit includes sampler circuits that sample an input signal to generate sampled signals in response to sampling clock signals having different phases. A first multiplexer circuit selects one of the sampled signals as a first sampled bit to represent the input signal. A first storage circuit coupled to an output of the first multiplexer circuit stores the first sampled bit in response to a first clock signal. A second multiplexer circuit selects one of the sampled signals as a second sampled bit to represent the input signal based on the first sampled bit. A second storage circuit stores a sampled bit selected from the sampled signals in response to a second clock signal. A time period between the second storage circuit storing a sampled bit and the first storage circuit storing the first sampled bit is substantially greater than a unit interval in the input signal. | 10-22-2015 |
20150268862 | MULTIPLE MEMORY RANK SYSTEM AND SELECTION METHOD THEREOF - A multiple memory rank selection method and system assigns, based at least in part on decoding an assignment signal in a second command/address signal, a first terminal of a memory device to receive a first command/address signal and a second terminal of the memory device to receive the second command/address signal or assigns the first terminal of the memory device to receive the second command/address signal and the second terminal of the memory device to receive the first command/address signal. The multiple memory selection method and system decodes a selection signal encoded in the first command/address signal and enables the memory device based at least in part on the assignment signal and the selection signal. | 09-24-2015 |
20150255144 | METHOD AND APPARATUS FOR CALIBRATING WRITE TIMING IN A MEMORY SYSTEM - A system that calibrates timing relationships between signals involved in performing write operations is described. This system includes a memory controller which is coupled to a set of memory chips, wherein each memory chip includes a phase detector configured to calibrate a phase relationship between a data-strobe signal and a clock signal received at the memory chip from the memory controller during a write operation. Furthermore, the memory controller is configured to perform one or more write-read-validate operations to calibrate a clock-cycle relationship between the data-strobe signal and the clock signal, wherein the write-read-validate operations involve varying a delay on the data-strobe signal relative to the clock signal by a multiple of a clock period. | 09-10-2015 |
20150243343 | METHOD AND APPARATUS FOR CALIBRATING WRITE TIMING IN A MEMORY SYSTEM - A system that calibrates timing relationships between signals involved in performing write operations is described. This system includes a memory controller which is coupled to a set of memory chips, wherein each memory chip includes a phase detector configured to calibrate a phase relationship between a data-strobe signal and a clock signal received at the memory chip from the memory controller during a write operation. Furthermore, the memory controller is configured to perform one or more write-read-validate operations to calibrate a clock-cycle relationship between the data-strobe signal and the clock signal, wherein the write-read-validate operations involve varying a delay on the data-strobe signal relative to the clock signal by a multiple of a clock period. | 08-27-2015 |
20150234754 | Memory Systems with Multiple Modules Supporting Simultaneous Access Responsive to Common Memory Commands - Described are memory systems in which a memory controller issues commands and addresses to multiple memory modules that collectively support each read and write transactions. A common set of control signal lines from the controller communicates the same command and address signals to the modules. For write commands, the controller sends subsets of write data to each module over a respective subset of data lines. For read commands, each module responds with a subset of the requested data over the respective subset of data lines. The memory modules can be width configurable so that a single full-width module can connect to both subsets of data lines to convey full-width data, or two half-width modules can connect one each to the subsets of data lines. | 08-20-2015 |
20150179248 | OPTIMIZING POWER IN A MEMORY DEVICE - Embodiments generally relate to a memory device. In one embodiment, the memory device includes a clock receiver circuit that receives an external clock signal and provides an internal clock signal. The memory device also includes a delay-locked loop circuit (DLL) having an input, and a circuit that receives the internal clock signal. The circuit selects which pulses of the internal clock signal are applied to the input of the DLL, such that no more than two clock pulses selected from at least three consecutive pulses of the external clock signal are applied to the input of the DLL during a predetermined interval. In another embodiment, a method includes receiving an external clock signal at a clock receiver circuit, receiving an internal clock signal from the clock receiver circuit, and selecting which pulses of the internal clock signal are applied to an input of a DLL, where no more than two clock pulses selected from at least three consecutive pulses of the external clock signal are applied to the input of the DLL during a predetermined interval. | 06-25-2015 |
20150177815 | USING DYNAMIC BURSTS TO SUPPORT FREQUENCY-AGILE MEMORY INTERFACES - The disclosed embodiments relate to a system that supports dynamic bursts to facilitate frequency-agile communication between a START memory controller and a memory device. During operation, the system monitors a reference clock signal received at an interface between the memory device and the memory controller. Upon detecting a frequency change in the reference clock signal from a fullrate to a subrate, the interface operates in a burst mode, wherein data is communicated through bursts separated by intervening low-power intervals during which portions of the interface are powered down. | 06-25-2015 |
20150103605 | DRAM SENSE AMPLIFIER THAT SUPPORTS LOW MEMORY-CELL CAPACITANCE - The disclosed embodiments provide a sense amplifier for a dynamic random-access memory (DRAM). This sense amplifier includes a bit line to be coupled to a cell to be sensed in the DRAM, and a complement bit line which carries a complement of a signal on the bit line. The sense amplifier also includes a p-type field-effect transistor (PFET) pair comprising cross-coupled PFETs that selectively couple either the bit line or the complement bit line to a high bit-line voltage. The sense amplifier additionally includes an n-type field effect transistor (NFET) pair comprising cross-coupled NFETs that selectively couple either the bit line or the complement bit line to ground. This NFET pair is lightly doped to provide a low threshold-voltage mismatch between NFETs in the NFET pair. In one variation, the gate material for the NFETs is selected to have a work function that compensates for a negative threshold voltage in the NFETs which results from the light substrate doping. In another variation, the sense amplifier additionally includes a cross-coupled pair of latching NFETs. These latching NFETs are normally doped and are configured to latch the voltage on the bit line after the lightly doped NFETs finish sensing the voltage on the bit line. | 04-16-2015 |
20150078495 | Clock and Data Recovery Having Shared Clock Generator - This disclosure provides a clock recovery circuit for a multi-lane communication system. Local clocks are recovered from the input signals using respective local CDR circuits, and associated CDR error signals are aggregated or otherwise combined. A global recovered clock for shared use by the local CDR circuits is generated at a controllable oscillation frequency as a function of a combination of the error signals from the plurality of receivers. A voltage- or current-controlled delay line can also be used to phase adjust the global recovered clock to mitigate band-limited, lane-correlated, high frequency jitter. | 03-19-2015 |
20150049798 | RECEIVER WITH ENHANCED ISI MITIGATION - A receiver integrated circuit is disclosed that includes a filter and a linear equalization circuit. The filter has an input to receive a signal symbols a main tap and a pre-cursor tap to reduces a pre-cursor ISI acting on the data symbols. The linear equalization circuit couples to the output and cooperates with the filter to further reduce ISI. | 02-19-2015 |
20150019786 | METHOD AND SYSTEM FOR SYNCHRONIZING ADDRESS AND CONTROL SIGNALS IN THREADED MEMORY MODULES - A memory system includes a memory module which further includes a set of memory devices. The set of memory devices includes a first subset of memory devices and a second subset of memory devices. An address bus is disposed on the memory module, wherein the address bus includes a first segment coupled to the first subset and a second segment coupled to the second subset. An address signal traverses the set of memory devices in sequence. The memory system also includes a memory controller which is coupled to the memory module. The memory controller includes a first circuit to output a first control signal that controls the first subset, such that the first control signal and the address signal arrive at a memory device in the first subset at substantially the same time. The memory controller additionally includes a second circuit to output a second control signal that controls the second subset, such that the second control signal and the address signal arrive at a memory device in the second subset at substantially the same time. | 01-15-2015 |
20140376364 | TEMPORAL REDUNDANCY - A circuit is provided to facilitate temporal redundancy for inter-chip communication. When an inter-chip communication channel fails, data bits associated with the faulty channel are steered to a non-faulty channel and transmitted via the non-faulty channel together with data bits associated with the non-faulty channel at an increased data rate. | 12-25-2014 |
20140376324 | TESTING THROUGH-SILICON-VIAS - Embodiments generally relate to integrated circuit devices having through silicon vias (TSVs). In one embodiment, an integrated circuit (IC) device includes a field of TSVs and an address decoder that selectably couples at least one of the TSVs to at least one of a test input and a test evaluation circuit. In another embodiment, a method includes selecting one or more TSVs from a field of TSVs in at least one IC device, and coupling each selected TS V to at least one of a test input and a test evaluation circuit. | 12-25-2014 |
20140351673 | DRAM METHOD, COMPONENTS, AND SYSTEM CONFIGURATIONS FOR ERROR MANAGEMENT - A memory device is disclosed that includes a row of storage locations to store a data word, and a spare row element. The data word is encoded via an error code for generating error information for correcting X bit errors or detecting Y bit errors, where Y is greater than X. The spare row element has substitute storage locations. The logic is responsive to detected errors to (1) enable correction of a data word based on the error information where there are no more than X bit errors, and (2) substitute the spare row element for a portion of the row where there are at least Y bit errors in the data word. | 11-27-2014 |
20140351629 | MEMORY REPAIR METHOD AND APPARATUS BASED ON ERROR CODE TRACKING - A memory module is disclosed that includes a substrate, a memory device that outputs read data, and a buffer. The buffer has a primary interface for transferring the read data to a memory controller and a secondary interface coupled to the memory device to receive the read data. The buffer includes error logic to identify an error in the received read data and to identify a storage cell location in the memory device associated with the error. Repair logic maps a replacement storage element as a substitute storage element for the storage cell location associated with the error. | 11-27-2014 |
20140341266 | METHODS AND CIRCUITS FOR ADAPTIVE EQUALIZATION - An integrated circuit equalizes a data signal expressed as a series of symbols. The symbols form data patterns with different frequency components. By considering these patterns, the integrated circuit can experiment with equalization settings specific to a subset of the frequency components, thereby finding an equalization control setting that optimizes equalization. Optimization can be accomplished by setting the equalizer to maximize symbol amplitude. | 11-20-2014 |
20140334238 | Low Power Memory Device - A method of operation within a memory device is disclosed. The method comprises receiving address information and corresponding enable information in association with a memory access request. The address information includes a row address that specifies a row of storage cells within a storage array of the memory device, and the enable information includes first and second enable values that correspond respectively to first and second storage locations within the row of storage cells. The method involves selectively transferring data between the first and second storage locations and sense amplifier circuitry according to states of the first and second enable values. This includes transferring data between the first storage location and the sense amplifier circuitry if the first enable value is in an enable state and transferring data between the second storage location and the sense amplifier circuitry if the second enable value is in the enable state. The states of the first and second enable values may be separately controlled. | 11-13-2014 |
20140333361 | EVENT-DRIVEN CLOCK DUTY CYCLE CONTROL - Duty cycle error vectors that indicate both the magnitude and direction of the duty cycle error relative to a desired duty cycle are generated within a duty cycle measurement circuit, enabling threshold-based determination of whether duty cycle adjustment is necessary, refraining from power-consuming adjustment and follow-up measurement in those cases where the duty cycle is within a target range. When duty cycle adjustment is deemed necessary, the magnitude of the duty cycle error indicated by the duty cycle error vector may be applied to effect proportional rather than incremental duty cycle adjustment, quickly returning the clock duty cycle to a target range. | 11-13-2014 |
20140333356 | Signal Distribution Networks and Related Methods - A signal distribution network has segments that each have a buffer circuit, a transmission line coupled to the buffer circuit, an inductor coupled to the buffer circuit through the transmission line, and a variable capacitance circuit coupled to the inductor and coupled to the buffer circuit through the transmission line. A capacitance of the variable capacitance circuit is set to determine a phase and an amplitude of a signal transmitted through the transmission line. A signal distribution network can include a phase detector, a loop filter circuit, and a resonant delay circuit. The phase detector compares a phase of a first periodic signal to a phase of a second periodic signal. The resonant delay circuit has a variable impedance circuit having an impedance that varies based on changes in an output signal of the loop filter circuit. | 11-13-2014 |
20140333341 | TESTING FUSE CONFIGURATIONS IN SEMICONDUCTOR DEVICES - Methods, systems, and apparatus for testing semiconductor devices. | 11-13-2014 |
20140329359 | PROCESS FOR MAKING A SEMICONDUCTOR SYSTEM - Multiple devices, including a first device and a second device, have operational circuitry and opposing first and second surfaces. First and second electrical contacts are formed at the first surface, while a third electrical contact is formed at the second surface opposite the first electrical contact. The first electrical contact is electrically connected to the operational circuitry, and the second electrical contact is electrically connected to the third electrical contact. The first device and the second device are subsequently stacked such that the first surface of the second device is located adjacent the second surface of the first device such that the first electrical contact of the second device is aligned with the third electrical contact of the first device. The first electrical contact of the second device is electrically connected to the third electrical contact of the first device. | 11-06-2014 |
20140323054 | COLLABORATIVE CHANNEL SOUNDING IN MULTI-ANTENNA SYSTEMS - The disclosed embodiments relate to a system that performs channel-sounding operations in a multi-antenna wireless communication system. During operation, the system first performs channel-sounding operations between a first client and a second client in a first frequency band. These channel-sounding operations involve transmitting a series of known tones between the first client and the second client and using signals received as a result of the transmissions to finds a strongest path between the first client and the second client. Next, the system uses the identified strongest path to improve channel-sounding operations in a second frequency band. | 10-30-2014 |
20140307833 | COMMUNICATION USING CONTINUOUS-PHASE MODULATED SIGNALS - Embodiments of a circuit are described. In this circuit, a modulation circuit provides a first modulated electrical signal and a second modulated electrical signal, where a given modulated electrical signal, which can be either the first modulated electrical signal or the second modulated electrical signal, includes minimum-shift keying (MSK) modulated data. Moreover, a first phase-adjustment element, which is coupled to the modulation circuit, sets a relative phase between the first modulated electrical signal and the second modulated electrical signal based on a phase value of the first phase-adjustment element. Additionally, an output interface, which is coupled to the first phase-adjustment element, is coupled to one or more antenna elements which output signals. These signals include a quadrature phase-shift-keying (QPSK) signal corresponding to the first modulated electrical signal and the second modulated electrical signal. | 10-16-2014 |
20140301151 | DISTRIBUTED SUB-PAGE SELECTION - Described are dynamic, random-access memories (DRAM) architectures and methods for subdividing memory activation into fractions of a page. Circuitry in support of sub-page activation is placed in the intersections of local wordline drivers and sense-amplifier stripes to allow independent control of adjacent arrays of memory cells without significant area overhead. | 10-09-2014 |
20140293710 | Data Transmission Using Delayed Timing Signals - An integrated circuit includes a delay circuit and first and second interface circuits. The delay circuit delays a first timing signal by an internal delay to generate an internal timing signal. The first interface circuit communicates data to an external device in response to the internal timing signal. The second interface circuit transmits an external timing signal for capturing the data in the external device. An external delay is added to the external timing signal in the external device to generate a delayed external timing signal. The delay circuit sets the internal delay based on a comparison between the delayed external timing signal and a calibration signal transmitted by the first interface circuit. | 10-02-2014 |
20140293671 | Configurable Width Memory Modules - Describes is a memory system that utilizes motherboard traces in a way that permits maximum utilization of system data lines while accommodating varying numbers of memory modules. It is possible in a system such as this to utilize all individual sets of point-to-point signaling lines, even when less than all of the available memory sockets are occupied. Memory modules with configurable data widths support a relatively wide mode in which one module utilizes all available system data lines, or a relatively narrow mode in which multiple, narrower modules split the available system data lines between them. | 10-02-2014 |
20140286450 | MULTI-ANTENNA TRANSMITTER FOR MULTI-TONE SIGNALING - Embodiments of a communication circuit are described. This communication circuit includes an input node to receive a set of data symbols and a partitioner coupled to the input node. This partitioner is to divide the set of data symbols into M irregular subgroups of data symbols, a given one of which includes non-consecutive data symbols in the set of data symbols. Moreover, this given irregular subgroup of data symbols includes at least two pairs of adjacent data symbols having different inter-data-symbol spacings in the set of data symbols. This communication circuit also includes M modulators coupled to the partitioner, where the given irregular subgroup of data symbols is coupled to a given modulator in the M modulators. Furthermore, the communication circuit includes M output nodes, where a given output node in the M output nodes is coupled to the given modulator and is to couple to an antenna element in M antenna elements. | 09-25-2014 |
20140286389 | Multiphase Receiver with Equalization Circuitry - An integrated circuit device includes a sense amplifier with an input to receive a present signal representing a present bit. The sense amplifier is to produce a decision regarding a logic level of the present bit. The integrated circuit device also includes a circuit to precharge the input of the sense amplifier by applying to the input of the sense amplifier a portion of a previous signal representing a previous bit. The integrated circuit device further includes a latch, coupled to the sense amplifier, to output the logic level. | 09-25-2014 |
20140286383 | Selectable-tap Equalizer - A signaling circuit having a selectable-tap equalizer. The signaling circuit includes a buffer, a select circuit and an equalizing circuit. The buffer is used to store a plurality of data values that correspond to data signals transmitted on a signaling path during a first time interval. The select circuit is coupled to the buffer to select a subset of data values from the plurality of data values according to a select value. The equalizing circuit is coupled to receive the subset of data values from the select circuit and is adapted to adjust, according to the subset of data values, a signal level that corresponds to a data signal transmitted on the signaling path during a second time interval. | 09-25-2014 |
20140285232 | Methods and Systems for Reducing Supply and Termination Noise - Described is a communication system in a first integrated circuit (IC) communicates with a second IC via single-ended communication channels. A bidirectional reference channel extends between the first and second ICs and is terminated on both ends. The termination impedances at each end of the reference channel support different modes for communicating signals in different directions. The termination impedances for the reference channel can be optimized for each signaling direction. | 09-25-2014 |
20140281205 | MEMORY CIRCUIT AND METHOD FOR ITS OPERATION - In an illustrative embodiment, the memory circuit includes first and second data paths on which data is transferred for read and write memory operations and first and second mixer circuits for adjusting the phase of clock signals applied to their inputs. The mixer circuits are cross-coupled so that the outputs of the first and second mixers are both available to both the first and second data paths. One mixer is used to provide a first phase adjusted clock signal for use by the operating circuit and the other mixer is used to provide a second phase adjusted clock signal for use by a following operation whatever that may be. | 09-18-2014 |
20140269006 | FAST READ SPEED MEMORY DEVICE - A memory device includes an array of resistive memory cells. Each resistive memory cell in the array includes a first resistive memory element, a second resistive memory element electrically coupled with the first resistive memory element at a common node between a first terminal of the first resistive memory element and a first terminal of the second resistive memory element, and a transistor comprising a gate electrically coupled with the common node. | 09-18-2014 |
20140258601 | Memory Controller Supporting Nonvolatile Physical Memory - A memory system includes nonvolatile physical memory, such as flash memory, that exhibits a wear mechanism asymmetrically associated with write operations. A relatively small cache of volatile memory reduces the number of writes, and wear-leveling memory access methods distribute writes evenly over the nonvolatile memory. | 09-11-2014 |
20140254294 | MEMORY CONTROLLER FOR STROBE-BASED MEMORY SYSTEMS - An integrated circuit (IC) memory controller is disclosed. The memory controller includes a receiver to receive a strobe signal and provide an internal strobe signal. An adjustable delay circuit delays an enable signal to generate a delayed enable signal. A gate circuit generates a gated strobe signal using the delayed enable signal that masks transitions of the internal strobe signal that occur prior to a valid region of the internal strobe signal. A sample circuit samples data using the gated strobe signal. | 09-11-2014 |
20140254286 | THERMAL ANNEAL USING WORD-LINE HEATING ELEMENT - In response to detecting an event during operation of an integrated-circuit memory device containing charge-storing memory cells, an electric current is enabled to flow through a word line coupled to the charge-storing memory cells for a brief interval to heat the charge-storing memory cells to an annealing temperature range. | 09-11-2014 |
20140253781 | Phase Gratings with Odd Symmetry for High-Resolution Lensed and Lensless Optical Sensing - A sensing device with an odd-symmetry grating projects near-field spatial modulations onto a closely spaced photodetector array. Due to physical properties of the grating, the spatial modulations are in focus for a range of wavelengths and spacings. The spatial modulations are captured by the array, and photographs and other image information can be extracted from the resultant data. Used in conjunction with a converging optical element, versions of these gratings provide depth information about objects in an imaged scene. This depth information can be computationally extracted to obtain a depth map of the scene. | 09-11-2014 |
20140253195 | OPEN-LOOP CORRECTION OF DUTY-CYCLE ERROR AND QUADRATURE PHASE ERROR - A Phase Interpolator (PI) may be employed as a precisely-controlled delay element in a transmit path, for example in clock forwarded serial links. Methods and circuits are disclosed for estimating a delay needed to correct duty-cycle/and or phase errors of the received clock. These corrections or delta values may be transmitted back to the transmitter side, preferably expressed directly in terms of PI phase codes, for convenient adjustment in the transmitter clock circuitry. Various techniques also are disclosed for measuring and mitigating the effects on PI integral non-linearity. | 09-11-2014 |
20140247911 | Partial Response Receiver And Related Method - A multi-phase partial response equalizer circuit includes sampler circuits that sample an input signal to generate sampled signals in response to sampling clock signals having different phases. A first multiplexer circuit selects one of the sampled signals as a first sampled bit to represent the input signal. A first storage circuit coupled to an output of the first multiplexer circuit stores the first sampled bit in response to a first clock signal. A second multiplexer circuit selects one of the sampled signals as a second sampled bit to represent the input signal based on the first sampled bit. A second storage circuit stores a sampled bit selected from the sampled signals in response to a second clock signal. A time period between the second storage circuit storing a sampled bit and the first storage circuit storing the first sampled bit is substantially greater than a unit interval in the input signal. | 09-04-2014 |
20140247678 | PROGRAMMABLE MEMORY REPAIR SCHEME - A controller including a non-volatile memory to store a repair address, and a memory control unit operatively coupled with the non-volatile memory. The memory control unit comprising a memory test function configured to detect a malfunctioning address of primary data storage elements within a memory device. The memory device being another semiconductor device separate from the controller. The memory test function configured to store the repair address in the non-volatile memory, the repair address indicating the malfunctioning address of the primary data storage element. | 09-04-2014 |
20140247656 | Pulse Control For NonVolatile Memory - A nonvolatile memory device that uses pulsed control and rest periods to mitigate the formation of defect precursors. A first embodiment uses pulsed bitline control, where the coupling between a memory cell channel and a reference voltage is pulsed when it is desired to change state in the associated memory cell. Each pulse may be chosen to be less than about 20 nanoseconds, while a “rest period” between pulses can be on the order of about a hundred nanoseconds or greater. Because bitline control is used, very short rise times can be enabled, enabling generation of pulse durations of 50 nanoseconds or less. In other embodiments, these methods may also be more generally applied to other conductors (e.g., wordline or substrate well, for program or erase operations); segmented wordlines or bitlines may also be used, to minimize RC loading and enable sufficiently short rise times to make pulses robust. | 09-04-2014 |
20140247637 | MULTI-DIE MEMORY DEVICE - A memory is disclosed that includes a logic die having first and second memory interface circuits. A first memory die is stacked with the logic die, and includes first and second memory arrays. The first memory array couples to the first memory interface circuit. The second memory array couples to the second interface circuit. A second memory die is stacked with the logic die and the first memory die. The second memory die includes third and fourth memory arrays. The third memory array couples to the first memory interface circuit. The fourth memory array couples to the second memory interface circuit. Accesses to the first and third memory arrays are carried out independently from accesses to the second and fourth memory arrays. | 09-04-2014 |
20140244923 | MEMORY CONTROLLER WITH CLOCK-TO-STROBE SKEW COMPENSATION - A clock signal is transmitted to first and second integrated circuit (IC) components via a clock signal line, the clock signal having a first arrival time at the first IC component and a second, later arrival time at the second IC component. A write command is transmitted to the first and second IC components to be sampled by those components at respective times corresponding to transitions of the clock signal, and write data is transmitted to the first and second IC components in association with the write command. First and second strobe signals are transmitted to the first and second IC components, respectively, to time reception of the first and second write data in those components. The first and second strobe signals are selected from a plurality of phase-offset timing signals to compensate for respective timing skews between the clock signal and the first and second strobe signals. | 08-28-2014 |
20140237261 | PROCESS AUTHENTICATED MEMORY PAGE ENCRYPTION - A memory controller encrypts contents of a page frame based at least in part on a frame key associated with the page frame. The memory controller generates a first encrypted version of the frame key based at least in part on a first process key associated with a first process, wherein the first encrypted version of the frame key is stored in a first memory table associated with the first process. The memory controller generates a second encrypted version of the frame key based at least in part on a second process key associated with a second process, wherein the second encrypted version of the frame key is stored in a second memory table associated with the second process, the first process and the second process sharing access to the page frame using the first encrypted version of the frame key and the second encrypted version of the frame key, respectively. | 08-21-2014 |
20140237152 | Folded Memory Modules - A memory module comprises a data interface including a plurality of data lines and a plurality of configurable switches coupled between the data interface and a data path to one or more memories. The effective width of the memory module can be configured by enabling or disabling different subsets of the configurable switches. The configurable switches may be controlled by manual switches, by a buffer on the memory module, by an external memory controller, or by the memories on the memory module. | 08-21-2014 |
20140233627 | Adaptive Equalization Using Correlation of Edge Samples with Data Patterns - An integrated receiver supports adaptive receive equalization. An incoming bit stream is sampled using edge and data clock signals derived from a reference clock signal. A phase detector determines whether the edge and data clock signals are in phase with the incoming data, while some clock recovery circuitry adjusts the edge and data clock signals as required to match their phases to the incoming data. The receiver employs the edge and data samples used to recover the edge and data clock signals to note the locations of zero crossings for one or more selected data patterns. The pattern or patterns may be selected from among those apt to produce the greatest timing error. Equalization settings may then be adjusted to align the zero crossings of the selected data patterns with the recovered edge clock signal. | 08-21-2014 |
20140233333 | METHODS AND APPARATUS FOR SYNCHRONIZING COMMUNICATION WITH A MEMORY CONTROLLER - A memory controller receives data and phase-providing signals from a memory device. The phase-providing signal is not a clock signal, but is used by the memory controller to phase align a local data-sampling signal with the incoming data. The memory controller samples the data signal with the data-sampling signal. The memory controller can perform maintenance operations to update the phase relationship between the phase-providing and data-sampling signals. | 08-21-2014 |
20140223269 | MEMORY CONTROLLER WITH WRITE DATA ERROR DETECTION AND REMEDIATION - A controller includes a link interface that is to couple to a first link to communicate bi-directional data and a second link to transmit unidirectional error-detection information. An encoder is to dynamically add first error-detection information to at least a portion of write data. A transmitter, coupled to the link interface, is to transmit the write data. A delay element is coupled to an output from the encoder. A receiver, coupled to the link interface, is to receive second error-detection information corresponding to at least the portion of the write data. Error-detection logic is coupled to an output from the delay element and an output from the receiver. The error-detection logic is to determine errors in at least the portion of the write data by comparing the first error-detection information and the second error-detection information, and, if an error is detected, is to assert an error condition. | 08-07-2014 |
20140223068 | Memory System Topologies Including A Buffer Device And An Integrated Circuit Memory Device - Systems, among other embodiments, include topologies (data and/or control/address information) between an integrated circuit buffer device (that may be coupled to a master, such as a memory controller) and a plurality of integrated circuit memory devices. For example, data may be provided between the plurality of integrated circuit memory devices and the integrated circuit buffer device using separate segmented (or point-to-point link) signal paths in response to control/address information provided from the integrated circuit buffer device to the plurality of integrated circuit buffer devices using a single fly-by (or bus) signal path. An integrated circuit buffer device enables configurable effective memory organization of the plurality of integrated circuit memory devices. The memory organization represented by the integrated circuit buffer device to a memory controller may be different than the actual memory organization behind or coupled to the integrated circuit buffer device. The buffer device segments and merges the data transferred between the memory controller that expects a particular memory organization and actual memory organization. | 08-07-2014 |
20140219008 | Semiconductor Memory Device with Hierarchical Bitlines - A dynamic random access memory (DRAM) device has a hierarchical bitline structure with local bitlines and global bitlines formed on different metal layers. The local bitlines are separated into a plurality of local bitline sections, and bitline isolation switches are configured to connect or disconnect the local bitline sections to or from the global bitlines. As a result, the local bitlines with higher per-length capacitance can be made shorter, since the global bitline with lower per-length capacitance is used to route the signal from the cell capacitances of the memory cells to the remote sense amplifiers. | 08-07-2014 |
20140218120 | ELECTRONIC CIRCUITS USING COUPLED MULTI-INDUCTORS - Coupled multi-inductors and their applications. An apparatus includes several circuit stages. Each circuit stage includes an inductive element that overlaps with the inductive elements of its adjacent circuit stages, forming a loop of coupled circuit stages. The apparatus may be, for example, a multi-phase oscillator with multiple oscillators that are magnetically coupled to each other for generating oscillation signals at different phases. The apparatus may also be, for example, a phase interpolator for combining input signals. | 08-07-2014 |
20140210683 | CALIBRATING A RETRO-DIRECTIVE ARRAY FOR AN ASYMMETRIC WIRELESS LINK - The disclosed embodiments relate to a technique for calibrating a retro-directive array. During the calibration process, the system measures a gain g | 07-31-2014 |
20140208188 | Variable Code Rate Transmission - An integrated circuit device includes an output buffer circuit that provides a first output having a first code rate. The first output is provided in response to a first indication of a change in a parameter that affects an error rate of the first output. The first output includes redundant information. The output buffer circuit provides a second output having a second code rate. The second output is provided in response to a second indication of the second output having an error rate that is different than the error rate of the first output. The second code rate of the second output is different than the first code rate. | 07-24-2014 |
20140201553 | MULTI-ELEMENT MEMORY DEVICE WITH POWER CONTROL FOR INDIVIDUAL ELEMENTS - A multi-element device includes a plurality of memory elements, each of which includes a memory array, access circuitry to control access to the memory array, and power control circuitry. The power control circuitry, which includes one or more control registers for storing first and second control values, controls distribution of power to the access circuitry in accordance with the first control value, and controls distribution of power to the memory array in accordance with the second control value. Each memory element also includes side-band circuitry for enabling a host system to set at least the first control value and the second control value in the one or more control registers. | 07-17-2014 |
20140201431 | DISTRIBUTED PROCEDURE EXECUTION AND FILE SYSTEMS ON A MEMORY INTERFACE - Nonvolatile memory (e.g., flash memory, solid-state disk) is included on memory modules that are on a DRAM memory channel. Nonvolatile memory residing on a DRAM memory channel may be integrated into the existing file system structures of operating systems. The nonvolatile memory residing on a DRAM memory channel may be presented as part or all of a distributed file system. Requests and/or remote procedure call (RPC) requests, or information associated with requests and/or RPCs, may be routed to the memory modules over the DRAM memory channel in order to service compute and/or distributed file system commands. | 07-17-2014 |
20140197409 | MULTI-CHIP PACKAGE AND INTERPOSER WITH SIGNAL LINE COMPRESSION - A multi-chip package with signal line compression for testing of the multi-chip package. The multi-chip package includes an interposer and two or more integrated circuits attached to the interposer. The interposer includes multiple data signal lines for data communications between the two integrated circuits. The data signal lines are also coupled to one or more test contacts through an interface circuit. The number of test contacts is smaller than the number of signal lines, which allows a large number of signal lines to be tested with a smaller number of test contacts. | 07-17-2014 |
20140192940 | COMMUNICATION CHANNEL CALIBRATION FOR DRIFT CONDITIONS - A method and system provides for execution of calibration cycles from time to time during normal operation of the communication channel. A calibration cycle includes de-coupling the normal data source from the transmitter and supplying a calibration pattern in its place. The calibration pattern is received from the communication link using the receiver on the second component. A calibrated value of a parameter of the communication channel is determined in response to the received calibration pattern. The steps involved in calibration cycles can be reordered to account for utilization patterns of the communication channel. For bidirectional links, calibration cycles are executed which include the step of storing received calibration patterns on the second component, and retransmitting such calibration patterns back to the first component for use in adjusting parameters of the channel at first component. | 07-10-2014 |
20140189466 | Memory Error Detection - Systems and methods are provided for detecting and correcting address errors in a memory system. In the memory system, a memory device generates an error-detection code based on an address transmitted via an address bus and transmits the error-detection code to a memory controller. The memory controller transmits an error indication to the memory device in response to the error-detection code. The error indication causes the memory device to remove the received address and prevent a memory operation | 07-03-2014 |
20140185725 | DRIFT TRACKING FEEDBACK FOR COMMUNICATION CHANNELS - A communication channel includes a first component having a transmitter coupled to a normal signal source, and a second component having a receiver coupled to a normal signal destination. A communication link couples the first and second components. Calibration logic provides for setting an operation value for a parameter of the communication channel, such as by executing an exhaustive calibration sequence at initialization of the link. A tracking circuit, including a monitoring function, tracks drift in the parameter by monitoring a feedback signal that has a characteristic that correlates with drift in the communication channel, and updates, or indicates the need for updating of, the operation value of the parameter in response to the monitoring function. | 07-03-2014 |
20140185362 | SYSTEM AND METHOD FOR PERFORMING MEMORY OPERATIONS ON RRAM CELLS - A resistive RAM (RRAM) device has a bit line, a word line, a source line carrying a bias voltage that is a substantially static and non-negative voltage, an RRAM cell, and a bit line control coupled to the bit line circuit. The RRAM cell includes a gate node coupled to the word line, a bias node coupled to the source line, and a bit line node coupled to the bit line. The bit line control circuit is configured to generate non-negative command voltages to perform respective memory operations on the RRAM cell. | 07-03-2014 |
20140181393 | Memory Systems and Methods for Dynamically Phase Adjusting a Write Strobe and Data to Account for Receive-Clock Drift - A memory system includes a memory controller that writes data to and reads data from a memory device. A write data strobe accompanying the write data indicates to the memory device when the write data is valid, whereas a read strobe accompanying data from the memory device indicates to the memory controller when the read data is valid. The memory controller adaptively controls the phase of the write data strobe to compensate for timing drift at the memory device. The memory controller uses read signals as a measure of the drift. | 06-26-2014 |
20140181331 | Reconfigurable Memory Controller - Embodiments of a memory controller are described. This memory controller includes signal connectors, which are electrically coupled to a communication path that includes multiple links, and an interface circuit, which is electrically coupled to the signal connectors. In a first operating mode, the interface circuit communicates with a first memory device via the communication path using spatial multiplexing, in which there are dedicated command/address links and dedicated data links in the communication path. Moreover, in a second operating mode, the interface circuit communicates with a second memory device via the communication path using time multiplexing, in which at least some of the links in the communication path time interleave command/address information and data. | 06-26-2014 |
20140175264 | Pixel Structure and Reset Scheme - An image sensor that includes a pixel array with image pixels with conditional reset circuitry. The pixels can be reset by a combination of row select and column reset signals, which implements the reset function while minimizing the number of extra signal lines. The pixels may also include pinned photodiodes. The manner in which the pinned photodiodes are used reduces noise and allows the quantization of the pixel circuits to be programmable. | 06-26-2014 |
20140173240 | MEMORY CONTROLLER WITH STAGGERED REQUEST SIGNAL OUTPUT - A memory controller having a time-staggered request signal output. A first timing signal is generated while a second timing signal is generated having a first phase difference relative to the first timing signal. An address value is transmitted in response to the first timing signal and a control value is transmitted in response to the second timing signal, the address value and control value constituting portions of a first memory access request. | 06-19-2014 |
20140173238 | Methods and Circuits for Securing Proprietary Memory Transactions - Described are systems and method for protecting data and instructions shared over a memory bus and stored in memory. Independent and separately timed stream ciphers for write and read channels allow timing variations between write and read transactions. Data and instructions can be separately encrypted prior to channel encryption to further secure the information. pad generators and related cryptographic circuits are shared for read and write data, and to secure addresses. The cryptographic circuits can support variable data widths, and in some embodiments memory devices incorporate security circuitry that can implement a shared-key algorithm using repurposed memory circuitry. | 06-19-2014 |
20140169438 | Receiver with Clock Recovery Circuit and Adaptive Sample and Equalizer Timing - A receiver is equipped with an adaptive phase-offset controller and associated timing-calibration circuitry that together shift the timing for a data sampler and a digital equalizer. The sample and equalizer timing is shifted to a position with less residual inter-symbol interference (ISI) energy relative to the current symbol. The shifted position may be calculated using a measure of signal quality, such as a receiver bit-error rate or a comparison of filter-tap values, to optimize the timing of data recovery. | 06-19-2014 |
20140164823 | Memory Disturbance Recovery Mechanism - Components of a memory system, such as a memory controller and memory device, which detect accumulated memory read disturbances and correct such disturbances before they reach a level that causes errors. The memory device includes a memory array and a disturbance control circuit. The memory array includes a plurality of memory rows. Each memory row is associated with a disturbance warning circuit having a state that corresponds to an accumulated disturbance in the memory row. The disturbance control circuit determines, responsive to an activation of a memory row of the plurality of memory rows specified by a row access command, whether the disturbance condition is present in the memory row based on the state of the disturbance warning circuit associated with the memory row. If a disturbance condition is present, the disturbance control circuit causes a recovery operation to be performed on the memory row to reduce the accumulated disturbances. | 06-12-2014 |
20140161166 | Margin Test Methods and Circuits - Described are methods and circuits for margin testing digital receivers. These methods and circuits prevent margins from collapsing in response to erroneously received data, and can thus be used in receivers that employ historical data to reduce intersymbol interference (ISI). Some embodiments detect receive errors for input data streams of unknown patterns, and can thus be used for in-system margin testing. Such systems can be adapted to dynamically alter system parameters during device operation to maintain adequate margins despite fluctuations in the system noise environment due to e.g. temperature and supply-voltage changes. Also described are methods of plotting and interpreting filtered and unfiltered error data generated by the disclosed methods and circuits. Some embodiments filter error data to facilitate pattern-specific margin testing. | 06-12-2014 |
20140159961 | LOW-COST TRACKING SYSTEM - A method of tracking a second electronic device with respect to a first electronic device is disclosed. The method includes transmitting a first waveform of a first frequency along a first fixed path associated with the first device. A second waveform having a frequency based on the first frequency is wirelessly transmitted from the first device to the second device along a first wireless path. The second waveform is wirelessly transmitted from the second device to the first device along a second wireless path. The first and second waveforms are received at the phase comparator circuit. A first phase relationship of the received first waveform is then compared to a second phase relationship of the received re-transmitted waveform. A coordinate of the second device is determined with respect to a reference coordinate based on the comparing. | 06-12-2014 |
20140158863 | High Fill-Factor Image Sensor Architecture - An image sensor architecture is implemented within an image sensor system. Image sensor pixels include pixel regions, and each pixel region includes a photosensor, a reset circuit, and a readout circuit. The readout circuit receives enable signals from an enable signal line, and outputs a pixel signal representative of light captured by the photosensor on a combination input/output line. The reset circuit resets the photosensor in response to receiving a first reset signal on a reset line and a second reset signal on the combination input/output line. | 06-12-2014 |
20140153310 | CONTENT ADDRESSABLE MEMORY - A content addressable memory can include an array of memory cells having multiple memory elements, such as RRAM elements, to store data based on a plurality resistive states. A common switching device, such as a transistor, can electrically couple a plurality of the multiple memory elements with a matchline during read, write, erase, and search operations. In search operations, the memory cells can receive a search word and selectively discharge a voltage level on the matchline based on the data stored by the memory elements and the search word provided to the memory elements. The voltage level of the matchline can indicate whether the search word matched the data stored in the memory cells. The content addressable memory can potentially have an effective memory cell sizing under 0.5F | 06-05-2014 |
20140152357 | METHODS AND CIRCUITS FOR REDUCING CLOCK JITTER - A communication system includes a continuous-time linear equalizer in the clock forward path. The equalizer may be adjusted to minimize clock jitter, including jitter associated with the first few clock edges after the clock signal is enabled. Reducing early-edge jitter reduces the power and circuit complexity otherwise needed to turn the system on quickly. | 06-05-2014 |
20140149654 | DATA INDEPENDENT PERIODIC CALIBRATION USING PER-PIN VREF CORRECTION TECHNIQUE FOR SINGLE-ENDED SIGNALING - A single-ended receiver includes an internal voltage generation circuit to set a first internal reference voltage (Vref). A model voltage generation circuit is configurable to receive an external reference voltage to be calibrated during an initial calibration. The model voltage generation circuit is configurable to track an offset value for voltage-temperature (VT) drift and the offset value is applied to the internal voltage generation circuit to calibrate the internal Vref during a periodic calibration of the single-ended receiver. | 05-29-2014 |
20140149618 | CALIBRATION PROTOCOL FOR COMMAND AND ADDRESS BUS VOLTAGE REFERENCE IN LOW-SWING SINGLE-ENDED SIGNALING - A single-ended receiver is coupled to an input-output (I/O) pin of a command and address (CA) bus. The receiver is configurable with dual-mode I/O support to operate the CA bus in a low-swing mode and a high-swing mode. The receiver is configurable to receive a first command on the I/O pin while in the high-swing mode, initiate calibration of the slave device to operate in the low-swing mode in response to the first command, switch the slave device to operate in the low-swing mode while the CA bus remains active, and to receive a second command on the I/O pin while in the low-swing mode. | 05-29-2014 |
20140145760 | High-Speed Low Power Stacked Transceiver - A transceiver includes a transmitter and receiver that form a series current path between two power-supply nodes. Powering both the transmitter and receiver with the same supply current saves power. The transmitter functions as a resistive load for the receiver, and thus performs useful work with power that would otherwise be dissipated as waste heat. | 05-29-2014 |
20140140419 | Configurable, Power Supply Voltage Referenced Single-Ended Signaling with ESD Protection - A single-ended data transmission system transmits a signal having a signal voltage that is referenced to a power supply voltage and that swings above and below the power supply voltage. The power supply voltage is coupled to a power supply rail that also serves as a signal return path. The signal voltage is derived from two signal supply voltages generated by a pair of charge pumps that draw substantially same amount of current from a power supply. | 05-22-2014 |
20140140389 | RECEIVER WITH DUOBINARY MODE OF OPERATION - An integrated circuit is disclosed that includes a receiver circuit to receive duobinary data symbols from a first signaling lane. The receiver circuit includes sampling circuitry to determine symbol state, and a duobinary decoder. The duobinary decoder is coupled to the sampling circuitry and converts the detected states to a PAM2 coded symbol stream. A decision-feedback equalizer (DFE) is provided that has inputs coupled to the sampling circuitry in parallel with the duobinary decoder. The DFE cooperates with the sampling circuitry to form a feedback path, such that the duobinary decoder is external to the feedback path. | 05-22-2014 |
20140140149 | Strobe Acquisition and Tracking - A memory controller includes an interface to receive a data strobe signal and corresponding read data. The data strobe signal and the read data correspond to a read command issued by the memory controller, and the read data is received in accordance with the data strobe signal and an enable signal. A circuit in the memory controller is to dynamically adjust a timing offset between the enable signal and the data strobe signal, and control logic is to issue a supplemental read command in accordance with a determination that a time interval since a last read command issued by the memory controller exceeds a predetermined value. | 05-22-2014 |
20140139261 | INTEGRATED CIRCUIT WITH CONFIGURABLE ON-DIE TERMINATION - Described are integrated-circuit die with differential receivers, the inputs of which are coupled to external signal pads. Termination legs coupled to the signal pads support multiple termination topologies. These termination legs can support adjustable impedances, capacitances, or both, which may be controlled using an integrated memory. | 05-22-2014 |
20140133536 | Periodic Calibration For Communication Channels By Drift Tracking - A method and system that provides for execution of a first calibration sequence, such as upon initialization of a system, to establish an operation value, which utilizes an algorithm intended to be exhaustive, and executing a second calibration sequence from time to time, to measure drift in the parameter, and to update the operation value in response to the measured drift. The second calibration sequence utilizes less resources of the communication channel than does the first calibration sequence. In one embodiment, the first calibration sequence for measurement and convergence on the operation value utilizes long calibration patterns, such as codes that are greater than 30 bytes, or pseudorandom bit sequences having lengths of 2 | 05-15-2014 |
20140133259 | MEMORY SYSTEM COMPONENTS THAT SUPPORT ERROR DETECTION AND CORRECTION - The disclosed embodiments relate to components of a memory system that support error detection and correction by means of storage and retrieval of error correcting codes. In specific embodiments, this memory system includes a memory device, which further contains a memory bank. During operation, the memory device receives a request to concurrently access a data word at a first row in a first storage region of the memory bank and error information associated with the data at a second row in a second storage region of the memory bank. Moreover, the memory request includes a first row address identifying the first row and a second row address identifying the second row. Next, the memory device routes the first row address and the second row address to a first row decoder and a second row decoder in the memory bank, respectively. Finally, the memory device uses the first row decoder to decode the first row address to access the first row and concurrently uses the second row decoder to decode the second row address to access the second row. | 05-15-2014 |
20140115296 | Remapping Memory Cells Based on Future Endurance Measurements - A method of operating a memory device that includes groups of memory cells is presented. The groups include a first group of memory cells. Each one of the groups has a respective physical address and is initially associated with a respective logical address. The device also includes an additional group of memory cells that has a physical address but is not initially associated with a logical address. In the method, a difference in the future endurance between the first group of memory cells and the additional group of memory cells is identified. When the difference in the future endurance between the first group and the additional group exceeds a predetermined threshold difference, the association between the first group and the logical address initially associated with the first group is ended and the additional group is associated with the logical address that was initially associated with the first group. | 04-24-2014 |
20140112089 | INTEGRATED CIRCUIT COMPRISING CIRCUITRY TO CHANGE A CLOCK SIGNAL FREQUENCY WHILE A DATA SIGNAL IS VALID - Methods and apparatuses for communicating information are described. In some embodiments, a first integrated circuit (IC) provides a clock signal and a data signal to a second IC, wherein the data bits of the data signal are timed according to the clock signal, and wherein the frequency of the clock signal is capable of being changed even when the data signal is valid. | 04-24-2014 |
20140112084 | On-Die Termination of Address and Command Signals - A memory controller is disclosed. The memory controller is configured to be connected to one or more memory devices via an address and control (RQ) bus. Each of the memory devices have on-die termination (ODT) circuitry connected to a subset of signal lines of the RQ bus, and the memory controller is operable to selectively disable the ODT circuitry in at least one memory device of the one or more memory devices. | 04-24-2014 |
20140108889 | MEMORY SYSTEM FOR ERROR DETECTION AND CORRECTION COVERAGE - A memory system supporting error detection and correction (EDC) coverage. The system includes a memory controller and a memory buffer. The memory buffer includes an interface to a first group of memory devices and an interface to a second group of memory devices. The memory buffer accesses data from the first group of memory devices and accesses first error information corresponding to the data from the second group of devices. The memory buffer also accesses additional data from the second group of memory devices and accesses second error information corresponding to the additional data from a device in the first group of memory devices. EDC coverage may also be configured by the memory controller so that some data accesses have EDC coverage and other data accesses do not have EDC coverage. | 04-17-2014 |
20140104935 | SEMICONDUCTOR MEMORY SYSTEMS WITH ON-DIE DATA BUFFERING - A semiconductor memory system includes a first semiconductor memory die and a second semiconductor memory die. The first semiconductor memory die includes a primary data interface to receive an input data stream during write operations and to deserialize the input data stream into a first plurality of data streams, and also includes a secondary data interface, coupled to the primary data interface, to transmit the first plurality of data streams. The second semiconductor memory die includes a secondary data interface, coupled to the secondary data interface of the first semiconductor memory die, to receive the first plurality of data streams. | 04-17-2014 |
20140101382 | DATA BUFFER WITH A STROBE-BASED PRIMARY INTERFACE AND A STROBE-LESS SECONDARY INTERFACE - A data buffer with a strobe-based primary interface and a strobe-less secondary interface used on a memory module is described. One memory module includes an address buffer, the data buffer and multiple dynamic random-access memory (DRAM) devices. The address buffer provides a timing reference to the data buffer and to the DRAM devices for one or more transactions between the data buffer and the DRAM devices via the strobe-less secondary interface. | 04-10-2014 |
20140098622 | Memory Controller That Enforces Strobe-To-Strobe Timing Offset - A memory controller outputs a clock signal to first and second DRAMs disposed on a memory module, the clock signal requiring respective first and second time intervals to propagate to the first and second DRAMs. The memory controller outputs a write command to be sampled by the first and second DRAMs at times indicated by the first clock signal and outputs, in association with the write command, first and second write data to the first and second DRAMs, respectively. The memory controller further outputs first and second strobe signals respectively to the first and second DRAMs, the first strobe signal to time reception of the first and second write data therein. The memory controller adjusts respective transmission times of the first and second strobe signals to be offset from one another by a time interval that corresponds to a difference between the first and second time intervals. | 04-10-2014 |
20140082234 | COMMUNICATION VIA A MEMORY INTERFACE - A memory space of a module connected to a memory controller via a memory interface may be used as a command buffer. Commands received by the module via the command buffer are executed by the module. The memory controller may write to the command buffer out-of-order. The memory controller may delay or eliminate writes to the command buffer. Tags associated with commands are used to specify the order commands are executed. A status buffer in the memory space of the module is used to communicate whether commands have been received or executed. Information received via the status buffer can be used as a basis for a determination to re-send commands to the command buffer. | 03-20-2014 |
20140071329 | RECONFIGURABLE OPTICAL DEVICE USING A TOTAL INTERNAL REFLECTION (TIR) OPTICAL SWITCH - An optical device having a total internal reflection (TIR) switch is able to switch to form two different optical imaging paths. Each optical imaging path has different optical characteristics that causes a detector to capture different imagery depending upon which optical imaging path is used. The TIR switch is switchable between a TIR state and a transmission state to control which optical imaging path is used by the device for imaging. | 03-13-2014 |
20140070854 | INTEGRATED CIRCUIT COMPRISING FREQUENCY CHANGE DETECTION CIRCUITRY - Embodiments of an integrated circuit (IC) comprising frequency change detection circuitry are described. Some embodiments include first circuitry to generate a second clock signal based on a first clock signal, wherein the first clock signal has a first clock frequency, and wherein the second clock signal has a second clock frequency that is an integral multiple of the first clock frequency. The embodiments further include second circuitry to obtain samples by oversampling the first clock signal using the second clock signal. Additionally, the embodiments include third circuitry to detect a change in the first clock frequency based on the samples. | 03-13-2014 |
20140068172 | SELECTIVE REFRESH WITH SOFTWARE COMPONENTS - A method of refreshing a memory is disclosed. The method includes accessing from active memory an active memory map. The active memory map is generated by software and identifies addresses corresponding to the active memory and associated refresh criteria for the addresses. The refresh criteria are evaluated for a portion of the active memory, and an operation initiated to refresh a portion of the active memory is based on the refresh criteria. | 03-06-2014 |
20140063887 | STACKED DRAM DEVICE AND METHOD OF MANUFACTURE - A memory stack includes a number of memory dies including a master die and one or more slave dies. The slave die can be converted to a master die by further processing. The slave die includes a memory core having memory cell arrays. The slave die also includes first and second metal layers that form first and second distribution lines in the memory core, respectively. An interface circuit in the slave die is decoupled from the first and second metal layers. | 03-06-2014 |
20140062549 | DIGITAL PLL WITH DYNAMIC LOOP GAIN CONTROL - The disclosed embodiments relate to a digital phase-locked loop (PLL) with dynamic gain control. This digital PLL includes a phase detector which receives a reference signal and a feedback signal as inputs and produces an output signal comprising up/down values. It also includes a digital loop filter which receives the phase-detector output signal as an input and produces an M-bit output signal. This digital loop filter is associated with a loop-parameter control unit (LPCU) which dynamically generates loop-filter parameters for the digital loop filter based on an observed pattern of up/down values from the phase-detector output over a specified period of time. A digitally controlled oscillator (DCO) receives the loop-filter output signal and produces a PLL output signal. Finally, a feedback path returns the PLL output signal to the phase detector. | 03-06-2014 |
20140054446 | Binary Pixel Circuit Architecture - An integrated-circuit image sensor that includes an array of pixel regions composed of binary pixel circuits. Each binary pixel circuit includes a binary amplifier having an input and an output. The binary amplifier generates a binary signal at the output in response to whether an input voltage at the input exceeds a switching threshold voltage level of the binary amplifier. A light-detecting element of the binary pixel circuit is coupled to the input of the binary amplifier. Initialization circuitry of the binary pixel circuit is coupled to the input of the binary amplifier. The initialization circuitry sets the input voltage to a level that is offset relative to the switching threshold voltage level of the binary amplifier by an offset voltage amount, the offset voltage amount representing a threshold amount of light incident on the light detecting element. | 02-27-2014 |
20140052934 | Memory with Alternative Command Interfaces - A memory device or module selects between alternative command ports. Memory systems with memory modules incorporating such memory devices support point-to-point connectivity and efficient interconnect usage for different numbers of modules. The memory devices and modules can be of programmable data widths. Devices on the same module can be configured select different command ports to facilitate memory threading. Modules can likewise be configured to select different command ports for the same purpose. | 02-20-2014 |
20140052906 | MEMORY CONTROLLER RESPONSIVE TO LATENCY-SENSITIVE APPLICATIONS AND MIXED-GRANULARITY ACCESS REQUESTS - A multi-channel memory controller ( | 02-20-2014 |
20140047306 | CONFIGURABLE, ERROR-TOLERANT MEMORY CONTROL - Configurable, error-tolerant communication of memory control information between components of a memory system. A controller component and memory component each have a variable-width command/address (CA) interface that operates in conjunction with an error detection/correction (EDC) channel to enable a variable level of error detection and correction with respect to command/address information conveyed between the two components as the widths of the CA interfaces are adjusted. | 02-13-2014 |
20140047155 | MEMORY MODULE THREADING WITH STAGGERED DATA TRANSFERS - A method of transferring data between a memory controller and at least one memory module via a primary data bus having a primary data bus width is disclosed. The method includes accessing a first one of a memory device group via a corresponding data bus path in response to a threaded memory request from the memory controller. The accessing results in data groups collectively forming a first data thread transferred across a corresponding secondary data bus path. Transfer of the first data thread across the primary data bus width is carried out over a first time interval, while using less than the primary data transfer continuous throughput during that first time interval. During the first time interval, at least one data group from a second data thread is transferred on the primary data bus. | 02-13-2014 |
20140043105 | INTEGRATED CIRCUIT HAVING A MULTIPLYING INJECTION-LOCKED OSCILLATOR - Methods and apparatuses featuring a multiplying injection-locked oscillator are described. Some embodiments include a pulse-generator-and-injector and one or more injection-locked oscillators. The outputs of the pulse-generator-and-injector can be injected into corresponding injection points of an injection-locked oscillator. In embodiments that include multiple injection-locked oscillators, the outputs of each injection-locked oscillator can be injected into the corresponding injection points of the next injection-locked oscillator. Some embodiments reduce deterministic jitter by dynamically modifying the loop length of an injection-locked oscillator, and/or by using a duty cycle corrector, and/or by multiplexing/blending the outputs from multiple delay elements of an injection-locked oscillator. | 02-13-2014 |
20140043069 | POWER SAVING DRIVER DESIGN - In an asymmetrically terminated communication system, the power consumed to transmit a particular bit value is adjusted based on whether the bit being output is the second, third, fourth, etc. consecutive bit with the same value after a transition to output the particular bit value. The adjustment of the power consumed to transmit the two or more consecutive bits with the same value may be made by adjusting the driver strength during the second, or subsequent, consecutive bits with the same value. The adjustment of the power consumed is performed on the bit value that consumes the most DC power and the other value is typically not adjusted. | 02-13-2014 |
20140034809 | IMAGE SENSOR WITH A SPLIT-COUNTER ARCHITECTURE - A split-counter architecture is implemented within an image sensor system. A first counter within an image sensor region counts image data from pixel regions within the image sensor region, and outputs the most significant bits of the image data to a second counter external to the image sensor region, reducing the bandwidth required between the image sensor region and the second counter, and reducing the size of the counters within the image sensor region. | 02-06-2014 |
20140032830 | Memory Component with Pattern Register Circuitry to Provide Data Patterns for Calibration - A memory component includes a memory core comprising dynamic random access memory (DRAM) storage cells and a first circuit to receive external commands. The external commands include a read command that specifies transmitting data accessed from the memory core. The memory component also includes a second circuit to transmit data onto an external bus in response to a read command and pattern register circuitry operable during calibration to provide at least a first data pattern and a second data pattern. During the calibration, a selected one of the first data pattern and the second data pattern is transmitted by the second circuit onto the external bus in response to a read command received during the calibration. | 01-30-2014 |
20140019792 | TIMING CALIBRATION FOR MULTIMODE I/O SYSTEMS - Integrated circuit devices that operate in different modes. In a low data rate mode, data is transferred between the integrated circuit devices at a low data rate, or no data is transferred at all. In a high data rate mode, data is transferred between integrated circuit devices at a high data rate. A transition mode facilitates the transition from the low data rate mode to the high data rate mode. During the transition mode data is transferred between the integrated circuit devices at an intermediate data rate greater than the low data rate but lower than the high data rate. Also during the transition mode, parameters affecting the transmission of data between the integrated circuit devices are calibrated at the high data rate. | 01-16-2014 |
20140016692 | EDGE BASED PARTIAL RESPONSE EQUALIZATION - A device implements data reception with edge-based partial response decision feedback equalization. In an example embodiment, the device implements a tap weight adapter circuit that sets the tap weights that are used for adjustment of a received data signal. The tap weight adapter circuit sets the tap weights based on previously determined data values and input from an edge analysis of the received data signal using a set of edge samplers. The edge analysis may include adjusting the sampled data signal by the tap weights determined by the tap weight adapter circuit. A clock generation circuit generates an edge clock signal to control the edge sampling performed by the set of edge samplers. The edge clock signal may be generated as a function of the signals of the edge samplers and prior data values determined by the equalizer. | 01-16-2014 |
20140003131 | MULTI-COLUMN ADDRESSING MODE MEMORY SYSTEM INCLUDING AN INTEGRATED CIRCUIT MEMORY DEVICE | 01-02-2014 |
20140002131 | ON-DIE TERMINATION | 01-02-2014 |
20130346822 | ERROR DETECTION AND OFFSET CANCELLATION DURING MULTI-WIRE COMMUNICATION - Embodiments of a circuit are described. In this circuit, a receive circuit includes M input nodes that receive a set of M symbols on M links during a time interval, where the set of M symbols are associated with a codeword. Moreover, the receive circuit includes a decoder, coupled to the M input nodes, that determines the codeword in a code space based on the set of M symbols and that decodes the codeword to a corresponding set of N decoded symbols. Additionally, the receive circuit may include a detector that detects an imbalance in a number of instances of a first value in the set of M symbols and a number of instances of a second value in the set of M symbols, and, if an imbalance is detected, that asserts an error condition. | 12-26-2013 |
20130346721 | MEMORY COMPONENTS AND CONTROLLERS THAT CALIBRATE MULTIPHASE SYNCHRONOUS TIMING REFERENCES - A first timing reference signal and a second timing reference signal are sent to a memory device. The second timing reference signal has approximately a quadrature phase relationship with respect to the first timing reference signal. A plurality of serial data patterns are received from the memory device. The transitions of the first timing reference and the second timing reference determining when transitions occur between the bits of the plurality of data patterns. Timing indicators associated with when received transitions occur between the bits of the plurality of data patterns are received from the memory device. The timing indicators are each measured using a single sampler. Based on the timing indicators, a first duty cycle adjustment for the first timing reference signal, a second duty cycle adjustment for the second timing reference signal, and a quadrature phase adjustment are determined and applied. | 12-26-2013 |
20130346685 | Memory Component with Pattern Register Circuitry to Provide Data Patterns for Calibration - A memory component includes a memory core comprising dynamic random access memory (DRAM) storage cells and a first circuit to receive external commands. The external commands include a read command that specifies transmitting data accessed from the memory core. The memory component also includes a second circuit to transmit data onto an external bus in response to a read command and pattern register circuitry operable during calibration to provide at least a first data pattern and a second data pattern. During the calibration, a selected one of the first data pattern and the second data pattern is transmitted by the second circuit onto the external bus in response to a read command received during the calibration. Further, at least one of the first and second data patterns is written to the pattern register circuitry in response to a write command received during the calibration. | 12-26-2013 |
20130346663 | Generating Interface Adjustment Signals in a Device-To-Device Interconnection System - Described are a system and method to control interface timing and/or voltage operations of signals transmitted between devices. A processor may be coupled through one or more bus interfaces of a bus to one or more corresponding interface timing and/or voltage comparison circuits and corresponding interface timing and/or voltage adjustment circuits. | 12-26-2013 |
20130343498 | ITERATIVE INTERFERENCE SUPPRESSION USING MIXED FEEDBACK WEIGHTS AND STABILIZING STEP SIZES - A receiver is configured for canceling intra-cell and inter-cell interference in coded, multiple-access, spread-spectrum transmissions that propagate through frequency-selective communication channels. The receiver employs iterative symbol-estimate weighting, subtractive cancellation with a stabilizing step-size, and mixed-decision symbol estimate. Receiver embodiments may be implemented explicitly in software of programmed hardware, or implicitly in standard Rake-based hardware either within the Rake (i.e., at the finger level) or outside the Rake (i.e., at the user of subchannel symbol level). | 12-26-2013 |
20130339775 | POWER-MANAGEMENT FOR INTEGRATED CIRCUITS - An integrated circuit includes a physical layer interface having a control timing domain and a data timing domain, and circuits that enable the control timing domain during a change in power conservation mode in response to a first event, and that enable the data timing domain in response to a second event. The control timing domain can include interface circuits coupled to a command and address path, and the data timing domain can include interface circuits coupled to a data path. | 12-19-2013 |
20130339631 | CROSS-THREADED MEMORY SYSTEM - In a data processing system, a buffer integrated-circuit (IC) device includes multiple control interfaces, multiple memory interfaces and switching circuitry to couple each of the control interfaces concurrently to a respective one of the memory interfaces in accordance with a path selection value. A plurality of requestor IC devices are coupled respectively to the control interfaces, and a plurality of memory IC devices are coupled respectively to the memory interfaces. | 12-19-2013 |
20130339464 | CONTACT AND IDENTITY MANAGEMENT IN A HETEROGENEOUS NETWORK WITH DISPARATE CLIENTS - The present disclosure describes one embodiment of an operating center server for managing contact information and user identifiers of users who communicate with others using a plurality of different communication platforms that operate on disparate networks (e.g., a cellular network or a wireless local area network). The operating center server converges cellular connectivity services (e.g., cellular calls or SMS messages) with internet protocol (IP) services (e.g., email or VOIP calls) and provides these services to terminal devices regardless of the specific network connectivity available to the devices. | 12-19-2013 |
20130336363 | ITERATIVE INTERFERENCE SUPPRESSION USING MIXED FEEDBACK WEIGHTS AND STABILIZING STEP SIZES - A receiver is configured for canceling intra-cell and inter-cell interference in coded, multiple-access, spread-spectrum transmissions that propagate through frequency-selective communication channels. The receiver employs iterative symbol-estimate weighting, subtractive cancellation with a stabilizing step-size, and mixed-decision symbol estimate. Receiver embodiments may be implemented explicitly in software of programmed hardware, or implicitly in standard Rake-based hardware either within the Rake (i.e., at the finger level) or outside the Rake (i.e., at the user of subchannel symbol level). | 12-19-2013 |
20130336080 | TIMING-DRIFT CALIBRATION - The disclosed embodiments relate to components of a memory system that support timing-drift calibration. In specific embodiments, this memory system contains a memory device (or multiple devices) which includes a clock distribution circuit and an oscillator circuit which can generate a frequency, wherein a change in the frequency is indicative of a timing drift of the clock distribution circuit. The memory device also includes a measurement circuit which is configured to measure the frequency of the oscillator circuit. Additionally, the memory system contains a memory controller which can transmit a request to the memory device to trigger the memory device to measure the frequency of the oscillator circuit. The memory controller is also configured to receive the measured frequency from the memory device and uses the measured frequency to determine the timing drift in the memory device. | 12-19-2013 |
20130336039 | MEMORY BANDWIDTH AGGREGATION USING SIMULTANEOUS ACCESS OF STACKED SEMICONDUCTOR MEMORY DIE - A packaged semiconductor device includes a data pin, a first memory die, and a second memory die stacked with the first memory die. The first memory die includes a first data interface coupled to the data pin and a first memory core having a plurality of banks. The second memory die includes a second memory core having a plurality of banks. A respective bank of the first memory core and a respective bank of the second memory core perform parallel row access operations in response to a first command signal and parallel column access operations in response to a second command signal. The first data interface of the first die provides aggregated data from the parallel column access operations in the first and second die to the data pin. | 12-19-2013 |
20130332668 | METHODS AND APPARATUSES FOR ADDRESSING MEMORY CACHES - A cache memory includes cache lines to store information. The stored information is associated with physical addresses that include first, second, and third distinct portions. The cache lines are indexed by the second portions of respective physical addresses associated with the stored information. The cache memory also includes one or more tables, each of which includes respective table entries that are indexed by the first portions of the respective physical addresses. The respective table entries in each of the one or more tables are to store indications of the second portions of respective physical addresses associated with the stored information. | 12-12-2013 |
20130322510 | SIGNAL LINE ROUTING TO REDUCE CROSSTALK EFFECTS - A signaling system is disclosed. The system includes a transmitter comprising an encoder to encode a data signal such that the encoded data signal has a balanced number of logical 1s and 0s. The system also includes a receiver having a decoder to decode the encoded data signal, and a link. The link is coupled between the transmitter and the receiver to route the encoded data signal. The link comprises three or more conductive lines that are routed along a path in parallel between the encoder and the decoder, and wherein the link comprises segments, each segment comprising a routing change to reorder proximity of at least one pair of lines relative to any adjacent segment, with a sufficient number of segments such that each line has each of the other lines of the link as a nearest neighbor over at least a portion of the path. | 12-05-2013 |
20130322506 | HIGH-SPEED SIGNALING SYSTEMS WITH ADAPTABLE PRE-EMPHASIS AND EQUALIZATION - A signaling system includes a pre-emphasizing transmitter and an equalizing receiver coupled to one another via a high-speed signal path. The receiver measures the quality of data conveyed from the transmitter. A controller uses this information and other information to adaptively establish appropriate transmit pre-emphasis and receive equalization settings, e.g. to select the lowest power setting for which the signaling system provides some minimum communication bandwidth without exceeding a desired bit-error rate. | 12-05-2013 |
20130321022 | METHODS AND APPARATUS FOR TESTING INACCESSIBLE INTERFACE CIRCUITS IN A SEMICONDUCTOR DEVICE - A semiconductor IC device comprises a timing circuit to transfer a timing signal, the timing circuit being configured to receive a first test signal and to effect a delay in the timing signal in response to the first test signal, the first test signal including a first timing event. The semiconductor IC device further comprises an interface circuit configured to transfer the data signal in response to the timing signal, the interface circuit being further configured to receive a second test signal and to effect a delay in the data signal in response to the second test signal, the second test signal including a second timing event that is related to the first timing event according to a test criterion. | 12-05-2013 |
20130320560 | DISTRIBUTED ON-CHIP DECOUPLING APPARATUS AND METHOD USING PACKAGE INTERCONNECT - An integrated circuit device is disclosed. The integrated circuit device includes a semiconductor die fabricated by a front-end semiconductor process and having oppositely disposed planar surfaces. The semiconductor die is formed with semiconductor devices, power supply circuitry coupled to the semiconductor devices, decoupling capacitance circuitry, and through-vias. The through-vias include a first group of vias coupled to the power supply circuitry and a second group of vias coupled to the decoupling capacitance circuitry. Conductors are formed in a first metal layer disposed on the semiconductor die in accordance with a back-end semiconductor process. The conductors are configured to couple to the first and second groups of through-vias to establish conductive paths from the power supply circuitry to the decoupling capacitance circuitry. | 12-05-2013 |
20130315290 | METHODS AND CIRCUITS FOR ADAPTIVE EQUALIZATION - An integrated circuit equalizes a data signal expressed as a series of symbols. The symbols form data patterns with different frequency components. By considering these patterns, the integrated circuit can experiment with equalization settings specific to a subset of the frequency components, thereby finding an equalization control setting that optimizes equalization. Optimization can be accomplished by setting the equalizer to maximize symbol amplitude. | 11-28-2013 |
20130314102 | DELAY FAULT TESTING FOR CHIP I/O - An integrated circuit (IC) chip is provided. The IC chip includes a signal output via which an outgoing signal is transmitted, and a signal input via which an incoming data signal is received. Also included on the IC ship is a pass circuit to couple the signal output to the signal input during testing of the IC chip. Furthermore, a delay circuit produces a first timing signal and a second timing signal during testing of the IC chip. The second timing signal is delayed from the first timing signal according to a test parameter. The first timing signal triggers transmission of a test signal via the signal output, and the second timing signal triggers sampling of the received test signal via the signal input. | 11-28-2013 |
20130308383 | HYBRID VOLATILE AND NON-VOLATILE MEMORY DEVICE - A composite, hybrid memory device including a first storage die having an array of volatile storage cells and a second storage die having an array of non-volatile storage cells disposed within an integrated circuit package. The hybrid memory device includes a shared interface circuit to receive memory access commands directed to the first storage die and the second storage die and to convey read and write data between an external data path and the first and second storage dice. | 11-21-2013 |
20130307607 | SIMULTANEOUS SWITCHING NOISE CANCELLATION BY ADJUSTING REFERENCE VOLTAGE AND SAMPLING CLOCK PHASE - A data signal is transmitted from a first circuit to a second circuit, with noise and/or jitter added to the data signal by supply noise in the power distribution network in the first circuit and/or a second circuit being effectively canceled out by adjustment of the reference voltage and/or the phase of the sampling clock used for sampling of the data signal in a manner that effectively mimics such noise and/or jitter added to the data signal. The second circuit uses a filter that has the impedance profile and/or the jitter profile of such power distribution network. The bus weight and/or the number of switching bits in the data pattern transmitted from the first circuit to the second circuit is applied to the filter to determine the adjustment to be made to the reference voltage or the phase of the sampling clock. | 11-21-2013 |
20130307584 | MULTI-VALUED ON-DIE TERMINATION - An integrated circuit memory device stores a plurality of digital values that specify respective termination impedances. The memory device switchably couples respective sets of load elements to a data input/output (I/O) to apply the termination impedances specified by the digital values, including, applying a first termination impedance to the data I/O during an idle state of the memory device, applying a first one of two non-equal termination impedances to the data I/O while the memory device receives write data in a memory write operation and applying a second one of the two non-equal termination impedances to the data I/O while another memory device receives write data in a memory write operation. When outputting read data via the data I/O in a memory read operation, the memory device switchably couples to the data I/O at least a portion of the load elements included in the sets of load elements. | 11-21-2013 |
20130305074 | PROTOCOL FOR MEMORY POWER-MODE CONTROL - In one embodiment, a memory device includes a memory core and input receivers to receive commands and data. The memory device also includes a register to store a value that indicates whether a subset of the input receivers are powered down in response to a control signal. A memory controller transmits commands and data to the memory device. The memory controller also transmits the value to indicate whether a subset of the input receivers of the memory device are powered down in response to the control signal. In addition, in response to a self-fresh command, the memory device defers entry into a self-refresh operation until receipt of the control signal that is received after receiving the self-refresh command. | 11-14-2013 |
20130301368 | Supporting Calibration For Sub-Rate Operation In Clocked Memory Systems - The disclosed embodiments related to a clocked memory system which performs a calibration operation at a full-rate frequency to determine a full-rate calibration state that specifies a delay between a clock signal and a corresponding data signal in the clocked memory system. Next, the clocked memory system uses the full-rate calibration state to calculate a sub-rate calibration state, which is associated with a sub-rate frequency (e.g., ½, ¼ or ⅛ of the full-rate frequency). The system then uses this sub-rate calibration state when the clocked memory system is operating at the sub-rate frequency. This calculation of the sub-rate state calibration states eliminates the need to perform an additional time-consuming calibration operation for each sub-rate. | 11-14-2013 |
20130294490 | RECEIVER CLOCK TEST CIRCUITRY AND RELATED METHODS AND APPARATUSES - An integrated circuit includes a plurality of receivers, each having a clock and data recovery circuit. A first local clock recovery circuit in a first receiver can be caused to produce a test clock which simulates a condition to be tested, and while a second receiver in the plurality of receivers that includes a second local clock recovery circuit is caused to use the test clock in place of the reference clock while receiving a test data sequence at its input. The clock and data recovery circuits in the receivers can include clock control loops responsive to loop control signals to modify the selected reference clock to generate the local clock in response to selective one of (i) a corresponding data signal for normal operation or during a test, and (ii) a test signal applied to the clock control loop in which case the test clock is produced. | 11-07-2013 |
20130290766 | Methods and Systems for Recovering Intermittent Timing-Reference Signals - A source-synchronous communication system in which a first integrated circuit (IC) conveys a data signal and concomitant strobe signal to a second IC. One or both ICs support hysteresis for the strobe channel that allows the second IC to distinguish between strobe preambles and noise, and thus prevent the false triggering of data capture. Hysteresis may also be employed to quickly settle the strobe channel to an inactive level after receipt of a strobe postamble. | 10-31-2013 |
20130290494 | SESSION MANAGEMENT FOR COMMUNICATION IN A HETEROGENEOUS NETWORK - The present disclosure describes one embodiment of an operating center server for managing communication sessions between terminal devices such as mobile phones, VOIP phones, and computers for example. The OC server creates and maintains sessions for one or more terminal devices that allow communication between these disparate devices on disparate communication networks through the OC server. | 10-31-2013 |
20130279280 | STACKED MEMORY DEVICE WITH REDUNDANT RESOURCES TO CORRECT DEFECTS - A memory device includes a stack of circuit layers, each circuit layer having formed thereon a memory circuit configured to store data and a redundant resources circuit configured to provide redundant circuitry to correct defective circuitry on at least one memory circuit formed on at least one layer in the stack. The redundant resources circuit includes a partial bank of redundant memory cells, wherein an aggregation of the partial bank of redundant memory cells in each of the circuit layers of the stack includes at least one full bank of redundant memory cells and wherein the redundant resources circuit is configured to replace at least one defective bank of memory cells formed on any of the circuit layers in the stack with at least a portion of the partial bank of redundant memory cells formed on any of the circuit layers in the stack. | 10-24-2013 |
20130278296 | Multi-Modal Communication Interface - An integrated circuit supports multiple communication modes using different input/output (IO) voltages. The IC includes a low-voltage communication circuit operating at a low IO voltage in a low-voltage mode, and a high-voltage communication circuit operating at a high IO voltage in a high-voltage mode. The low-voltage communication circuit includes low-voltage transistors in a critical path that exhibits sensitivity to a destructive voltage less than the high IO voltage. The low-voltage communication circuit is therefore provided with protection circuitry to protect the low-voltage transistors from the high 10 voltage. | 10-24-2013 |
20130271186 | Wide Range Frequency Synthesizer with Quadrature Generation and Spur Cancellation - A frequency synthesizer generates a wide range of frequencies from a single oscillator while achieving good noise performance. A cascaded phase-locked loop (PLL) circuit includes a first PLL circuit with an LC voltage controlled oscillator (VCO) and a second PLL circuit with a ring VCO. A feedforward path from the first PLL circuit to the second PLL circuit provides means and signal path for cancellation of phase noise, thereby reducing or eliminating spur and quantization effects. The frequency synthesizer can directly generate in-phase and quadrature phase output signals. A split-tuned ring-based VCO is controlled via a phase error detection loop to reduce or eliminate phase error between the quadrature signals. | 10-17-2013 |
20130262757 | MEMORY MODULE HAVING A WRITE-TIMING CALIBRATION MODE - In memory module populated by memory components having a write-timing calibration mode, control information that specifies a write operation is received via an address/control signal path and write data corresponding to the write operation is received via a data signal path. Each memory component receives multiple delayed versions of a timing signal used to indicate that the write data is valid, and outputs signals corresponding to the multiple delayed versions of the timing signal to enable determination, in a memory controller, of a delay interval between outputting the control information on the address/control signal path and outputting the write data on the data signal path. | 10-03-2013 |
20130258755 | INTEGRATED CIRCUIT DEVICE HAVING PROGRAMMABLE INPUT CAPACITANCE - An embodiment is directed to an integrated circuit device having programmable input capacitance. For example, a programmable register of a memory device may store a value representative of an adjustment to the input capacitance value of a control pin. An embodiment is directed to controlling the skew of a synchronous memory system by allowing programmability of the lighter loaded pins in order to increase their load to match the more heavily loaded pins. By matching lighter loaded pins to more heavily loaded pins, the system exhibits improved synchronization of propagation delays of the control and address pins. In addition, an embodiment provides the ability to vary the loading depending on how many ranks are on the device. | 10-03-2013 |
20130254585 | CLOCK GENERATION FOR TIMING COMMUNICATIONS WITH RANKS OF MEMORY DEVICES - A memory controller includes a clock generator to generate a first clock signal and a timing circuit to generate a second clock signal from the first clock signal. The second clock signal times communications with any of a plurality of memory devices in respective ranks, including a first memory device in a first rank and a second memory device in a second rank. The timing circuit is configured to adjust a phase of the first clock signal, when the memory controller is communicating with the second memory device, based on calibration data associated with the second memory device and timing adjustment data associated with feedback from at least the first memory device. | 09-26-2013 |
20130254475 | MEMORY REFRESH METHOD AND DEVICES - The present disclosure describes DRAM architectures and refresh controllers that allow for scheduling of an opportunistic refresh of a DRAM device concurrently with normal row activate command directed toward the DRAM device. Each activate command affords an “opportunity” to refresh another independent row (i.e., a wordline) within a memory device with no scheduling conflict. | 09-26-2013 |
20130251084 | LOW JITTER CLOCK RECOVERY CIRCUIT - A clock recovery circuit includes a first phase detector for measuring the phase difference between a first clock signal from a voltage controlled oscillator (VCO) and a data signal. A phase shifter responsive to a control signal based on this phase difference adjusts the phase of an incoming clock signal to yield a second clock signal. The phase difference between the first clock signal and the second clock signal is measured and the resulting signal is low-pass filtered to derive a control signal for controlling the VCO. The phase locked loop including the VCO filters out jitter. | 09-26-2013 |
20130250706 | MEMORY MODULE - A memory module having memory components, a termination structure, an address/control signal path, a clock signal path, multiple data signal paths and multiple strobe signal paths. The strobe signal paths and data signal paths are coupled to respective memory components, and the address/control signal path and clock signal path are coupled in common to all the memory components. The address/control signal path extends along the memory components to the termination structure such that control signals propagating toward the termination structure arrive at address/control inputs of respective memory components at progressively later times corresponding to relative positions of the memory components. | 09-26-2013 |
20130250657 | System and Method for Writing Data to an RRAM Cell - A resistive RAM device includes a bit line, a word line, an RRAM cell coupled to the word line and to the bit line, a write driver and a disable circuit. The write driver is coupled to the bit line. The disable circuit stops a write operation performed by the write driver on a respective RRAM cell when a predefined condition on the bit line is achieved. The predefined condition depends on a mode of operation of the RRAM cell. | 09-26-2013 |
20130249612 | METHOD AND APPARATUS FOR SOURCE-SYNCHRONOUS SIGNALING - A low-power, high-performance source-synchronous chip interface which provides rapid turn-on and facilitates high signaling rates between a transmitter and a receiver located on different chips is described in various embodiments. Some embodiments of the chip interface include, among others: a segmented “fast turn-on” bias circuit to reduce power supply ringing during the rapid power-on process; current mode logic clock buffers in a clock path of the chip interface to further reduce the effect of power supply ringing; a multiplying injection-locked oscillator (MILO) clock generator to generate higher frequency clock signals from a reference clock; a digitally controlled delay line which can be inserted in the clock path to mitigate deterministic jitter caused by the MILO clock generator; and circuits for periodically re-evaluating whether it is safe to retime transmit data signals in the reference clock domain directly with the faster clock signals. | 09-26-2013 |
20130246750 | CONFIGURABLE PIPELINE BASED ON ERROR DETECTION MODE IN A DATA PROCESSING SYSTEM - A method includes providing a data processor having an instruction pipeline, where the instruction pipeline has a plurality of instruction pipeline stages, and where the plurality of instruction pipeline stages includes a first instruction pipeline stage and a second instruction pipeline stage. The method further includes providing a data processor instruction that causes the data processor to perform a first set of computational operations during execution of the data processor instruction, performing the first set of computational operations in the first instruction pipeline stage if the data processor instruction is being executed and a first mode has been selected, and performing the first set of computational operations in the second instruction pipeline stage if the data processor instruction is being executed and a second mode has been selected. | 09-19-2013 |
20130241662 | INTEGRATED CIRCUIT DEVICE HAVING AN INJECTION-LOCKED OSCILLATOR - A variable injection-strength injection-locked oscillator (ILO) is described. The variable injection-strength ILO can output an output clock signal based on an input clock signal. The variable injection-strength ILO can pause, restart, slow down, or speed up the output clock signal synchronously with respect to the input clock signal in response to receiving power mode information. Specifically, the variable injection-strength ILO can be operated under relatively strong injection when the input clock signal is paused, restarted, slowed down, or sped up. | 09-19-2013 |
20130241622 | RECEIVER WITH TIME-VARYING THRESHOLD VOLTAGE - A system for communicating information between circuits is described. A transmit circuit provides pulse-amplitude-modulation (PAM) signals via a communication channel to a receiver. A circuit in the receiver determines digital values from the received signals using a time-varying threshold voltage, which varies during the bit-time. This approach may compensate for inter-symbol interference (ISI) to increase the voltage and timing margins of the system. | 09-19-2013 |
20130238848 | MECHANISM FOR ENABLING FULL DATA BUS UTILIZATION WITHOUT INCREASING DATA GRANULARITY - A memory is disclosed comprising a first memory portion, a second memory portion, and an interface, wherein the memory portions are electrically isolated from each other and the interface is capable of receiving a row command and a column command in the time it takes to cycle the memory once. By interleaving access requests (comprising row commands and column commands) to the different portions of the memory, and by properly timing these access requests, it is possible to achieve full data bus utilization in the memory without increasing data granularity. | 09-12-2013 |
20130235649 | DIRECT RELATIVE MEASUREMENT OF MEMORY DURABILITY - Disclosed is a memory including a plurality of resistive change memory cells, including at least a first group and a second group of the memory cells and a comparison circuit configured to conduct a direct relative comparison of a remaining endurance of the first group of memory cells to a remaining endurance of the second group of memory cells. | 09-12-2013 |
20130230122 | COMMUNICATION CHANNEL CALIBRATION FOR DRIFT CONDITIONS - A method and system provides for execution of calibration cycles from time to time during normal operation of the communication channel. A calibration cycle includes de-coupling the normal data source from the transmitter and supplying a calibration pattern in its place. The calibration pattern is received from the communication link using the receiver on the second component. A calibrated value of a parameter of the communication channel is determined in response to the received calibration pattern. The steps involved in calibration cycles can be reordered to account for utilization patterns of the communication channel. For bidirectional links, calibration cycles are executed which include the step of storing received calibration patterns on the second component, and retransmitting such calibration patterns back to the first component for use in adjusting parameters of the channel at first component. | 09-05-2013 |
20130227183 | MEMORY ACCESS DURING MEMORY CALIBRATION - A multi-rank memory system in which calibration operations are performed between a memory controller and one rank of memory while data is transferred between the controller and other ranks of memory. A memory controller performs a calibration operation that calibrates parameters pertaining to transmission of data via a first data bus between the memory controller and a memory device in a first rank of memory. While the controller performs the calibration operation, the controller also transfers data with a memory device in a second rank of memory via a second data bus. | 08-29-2013 |
20130215669 | RESISTANCE CHANGE MEMORY CELL CIRCUITS AND METHODS - The gate of the access transistor of a 1 transistor 1 resistor (1T1R) type RRAM cell is biased relative to the source of the access transistor using a current mirror. Under the influence of a voltage applied across the 1T1R cell (e.g., via the bit line), the RRAM memory element switches from a higher resistance to a lower resistance. As the RRAM memory element switches from the higher resistance to the lower resistance, the current through the RRAM cell switches from being substantially determined by the higher resistance of the RRAM device (while the access transistor is operating in the linear region) to being substantially determined by the saturation region operating point of the access transistor. | 08-22-2013 |
20130215122 | DISPLAY APPARATUS WITH LIGHT GUIDE BASED SOLAR CONCENTRATOR - A display apparatus includes a display, a primary light concentrator, a concentrator light guide, and a solar cell. The primary light concentrator is arranged in tandem with the display, and the primary light concentrator is configured to concentrate incident light into an array of output regions. The concentrator light guide receives light from the primary light concentrator. The concentrator light guide includes light redirecting elements aligned with the output regions of the primary light concentrator to redirect light from the primary light concentrator along the concentrator light guide toward an edge thereof. The solar cell is located adjacent the edge of the concentrator light guide. | 08-22-2013 |
20130212331 | Techniques for Storing Data and Tags in Different Memory Arrays - A memory controller includes logic circuitry to generate a first data address identifying a location in a first external memory array for storing first data, a first tag address identifying a location in a second external memory array for storing a first tag, a second data address identifying a location in the second external memory array for storing second data, and a second tag address identifying a location in the first external memory array for storing a second tag. The memory controller includes an interface that transfers the first data address and the first tag address for a first set of memory operations in the first and the second external memory arrays. The interface transfers the second data address and the second tag address for a second set of memory operations in the first and the second external memory arrays. | 08-15-2013 |
20130208818 | MEMORY COMPONENTS AND CONTROLLERS THAT UTILIZE MULTIPHASE SYNCHRONOUS TIMING REFERENCES - Multiple timing reference signals (e.g., clock signals) each cycling at the same frequency are distributed in a fly-by topology to a plurality of memory devices in various embodiments are presented. These multiple clock signals each have a different phase relationship to each other (e.g., quadrature). A first circuit receives a first of these clocks as a first timing reference signal. A second circuit receives a second of these clocks as a second timing reference signal. A plurality of receiver circuits receive signals synchronously with respect to the first timing reference signal and the second timing reference signal, such that a first signal value is resolved using the first timing reference signal and a second signal value is resolved using the second timing reference signal. | 08-15-2013 |
20130202061 | REFERENCE VOLTAGE GENERATION IN A SINGLE-ENDED RECEIVER - As single-ended signaling is implemented in higher-speed communications, accurate and consistent reading of the data signal becomes increasingly challenging. In particular, single-ended links can be limited by insufficient timing margins for sampling a received input signal. A single ended receiver provides for improved timing margins by adjusting a reference voltage used to sample the input signal. A calibration pattern is provided to the receiver as the input signal, and the reference voltage is adjusted toward a median value of the signal. As a result, the receiver provides for reading received single-ended data in a manner enabling accurate data transfer at higher speeds. | 08-08-2013 |
20130194879 | Early Read After Write Operation Memory Device, System And Method - A memory device, system and method for allowing an early read operation after one or more write operations is provided according to an embodiment of the present invention. The memory device comprises an interface for providing a first write address, a first write data, and a read address. A memory core is coupled to the interface and includes a first memory section having a first data path and a first address path and a second memory section having a second data path and a second address path. In an embodiment of the present invention, the first data and first address path is independent of the second data and second address path. The first write data is provided on the first data path responsive to the first write address being provided on the first address path while a read data is provided on the second data path responsive to the read address being provided on the second address path. | 08-01-2013 |
20130194854 | MEMORY DEVICE COMPRISING PROGRAMMABLE COMMAND-AND-ADDRESS AND/OR DATA INTERFACES - A memory device comprising a programmable command-and-address (CA) interface and/or a programmable data interface is described. In an operational mode, two or more CA interfaces may be active. In another operational mode, at least one, but not all, CA interfaces may be active. In an operational mode, all of the data interfaces may be active. In another operational mode, at least one, but not all, data interfaces may be active. The memory device can include circuitry to select: an operational mode; a sub-mode within an operational mode; one or more CA interfaces as the active CA interface(s); a main CA interface from multiple active CA interfaces; and/or one or more data interfaces as the active data interfaces. The circuitry may perform these selection(s) based on one or more bits in one or more registers and/or one or more signals received on one or more pins. | 08-01-2013 |
20130188436 | INTEGRATED CIRCUIT WITH ADAPTIVE POWER STATE MANAGEMENT - Methods and apparatuses that relate to an integrated circuit (IC) with adaptive power state management are described. The IC can be coupled with, and can control the operation of, a memory device. The IC and the memory device can be operated in multiple operational states, wherein each operational state may represent a tradeoff point between performance and power consumption. The IC may be capable of: ( | 07-25-2013 |
20130182457 | LIGHTING ASSEMBLY WITH STATIC AUTOSTEREOSCOPIC IMAGE OUTPUT - A lighting assembly includes a light guide in which light propagates by total internal reflection between opposed major surfaces. The light guide receives light generated by two light sources at opposed light input edges of the light guide. The light guide includes light extracting elements that respectively extract light to form a left eye image at a first region and a right eye image at a second region. The left eye and right eye images, when viewed by a viewer, form a static autostereoscopic image. | 07-18-2013 |
20130176800 | MEMORY CONTROLLER HAVING A WRITE-TIMING CALIBRATION MODE - A memory controller outputs address bits and a first timing signal to a DRAM, each address bit being associated with an edge of the first timing signal and the first timing signal requiring a first propagation delay time to propagate to the DRAM. The memory controller further outputs write data bits and a second timing signal to the DRAM in association with the address bits, each of the write data bits being associated with an edge of the second timing signal and the second timing signal requiring a second propagation delay time to propagate to the DRAM. The memory controller includes a plurality of series-coupled delay elements to provide respective, differently-delayed internal delayed timing signals and a multiplexer to select one of the delayed timing signals to be output as the second timing signal based on a difference between the first propagation delay time and the second propagation delay time. | 07-11-2013 |
20130176763 | STACKED MEMORY WITH REDUNDANCY - A stacked memory is disclosed including a first integrated circuit memory chip having first storage locations and stacked with a second integrated circuit memory chip. A redundant memory is shared by the first and second integrated circuit memory chips and has redundant storage locations that selectively replace corresponding storage locations in the first or second integrated circuit memory chips. The stacked memory also includes a pin interface for coupling to an external integrated circuit memory controller and respective first and second signal paths. The first signal path is formed through the first and second integrated circuit memory chips and is coupled to the redundant memory and to the pin interface. The second signal path is formed through the first and second integrated circuit memory chips and is coupled to the redundant memory and to the pin interface via the first signal path. | 07-11-2013 |
20130173871 | Memory Systems and Methods for Dividing Physical Memory Locations Into Temporal Memory Locations - Described are memory modules that support dynamic point-to-point extensibility using fixed-width memory die. The memory modules include data-width translators that allow the modules to vary the effective width of their external memory interfaces without varying the width of the internal memory interfaces extending between the translators and associated fixed-width dies. The data-width translators use a data-mask signal to selectively prevent memory accesses to subsets of physical addresses. This data masking divides the physical address locations into two or more temporal subsets of the physical address locations, effectively increasing the number of uniquely addressable locations in a given module. Reading temporal addresses in write order can introduce undesirable read latency. Some embodiments reorder read data to reduce this latency. | 07-04-2013 |
20130168674 | Methods and Systems for Repairing Interior Device Layers in Three-Dimensional Integrated Circuits - A three-dimensional integrated circuit (3D-IC) includes a stack of semiconductor wafers, each of which includes a substrate and a device layer. Programmable components, such as memory arrays or logic circuits, are formed within the device layers. Some of the programmable components are redundant, and can be substituted for defective components by programming passive memory elements in a separate conductive layer provided for this purpose. The separate conductive layer is devoid of active devices, and is therefore relatively reliable and inexpensive. | 07-04-2013 |
20130162460 | HIGH-ACCURACY DETECTION IN COLLABORATIVE TRACKING SYSTEMS - An electronic device for wirelessly tracking the position of a second electronic device is disclosed. The electronic device includes transceiver circuitry and processing circuitry. The transceiver circuitry includes a beacon generator to generate a beacon at a particular frequency and direction. An antenna array transmits the beacon, and receives at least one modulated reflected beacon from the second electronic device. The transceiver circuitry also includes a discriminator to discriminate between received modulated reflected beacons and received reflected interfering beacons. The processing circuitry couples to the transceiver circuitry and tracks the position of the second device based on the modulated reflected beacons. | 06-27-2013 |
20130159657 | MEMORY CONTROLLER WITH FAST REACQUISITION OF READ TIMING TO SUPPORT RANK SWITCHING - Techniques for performing fast timing reacquisition of read timing in a memory controller to support rank switching device are described. During operation, a memory controller receives read data for a read operation, wherein the read data includes a calibration preamble. The memory controller uses the calibration preamble to perform a fast timing reacquisition operation to compensate for a timing drift between a clock path and a data path for the read data. In particular, the memory controller performs the fast timing reacquisition by adjusting a data delay line coupled to a clock path associated with a control loop, wherein the control loop controls a data clock which is used to receive read data at the memory controller. | 06-20-2013 |
20130148437 | THERMAL ANNEAL USING WORD-LINE HEATING ELEMENT - In response to detecting an event during operation of an integrated-circuit memory device containing charge-storing memory cells, an electric current is enabled to flow through a word line coupled to the charge-storing memory cells for a brief interval to heat the charge-storing memory cells to an annealing temperature range. | 06-13-2013 |
20130138911 | MEMORY CONTROLLER WITH RECONFIGURABLE HARDWARE - Memory controller concepts are disclosed in which hardware resources of a memory controller can be re-used or re-configured to accommodate various different memory configurations. The memory configuration may be stored in mode register bits ( | 05-30-2013 |
20130132704 | MEMORY CONTROLLER AND METHOD FOR TUNED ADDRESS MAPPING - A memory system maps physical addresses to device addresses in a way that reduces power consumption. The system includes circuitry for deriving efficiency measures for memory usage and selects from among various address-mapping schemes to improve efficiency. The address-mapping schemes can be tailored for a given memory configuration or a specific mixture of active applications or application threads. Schemes tailored for a given mixture of applications or application threads can be applied each time the given mixture is executing, and can be updated for further optimization. Some embodiments mimic the presence of an interfering thread to spread memory addresses across available banks, and thereby reduce the likelihood of interference by later- introduced threads. | 05-23-2013 |
20130132685 | MEMORY CONTROLLER AND MEMORY DEVICE COMMAND PROTOCOL - Embodiments generally relate to a command protocol and/or related circuits and apparatus for communication between a memory device and a memory controller. In one embodiment, the memory controller includes an interface for transmitting commands to the memory device, wherein the memory device includes bitline multiplexers, and accessing of memory cells within the memory device is carried out by a command protocol sequence that includes a wordline selection, followed by bitline selections by the bitline multiplexers. In another embodiment, a memory device includes bitline multiplexers and further includes an interface for receiving a command protocol sequence that specifies a wordline selection followed by bitline selections by the bitline multiplexers. | 05-23-2013 |
20130121094 | INTEGRATED CIRCUIT COMPRISING A DELAY-LOCKED LOOP - Embodiments of an integrated circuit (IC) comprising a delay-locked loop (DLL) are described. Some embodiments include first circuitry to generate a first clock signal by delaying an input clock signal by a first delay, second circuitry to determine a code based on the input clock signal and the first clock signal, and third circuitry to produce an output clock signal based on the input clock signal and the code. In some embodiments, the power consumption of the DLL circuitry is reduced by powering down at least some parts of the DLL circuitry for most of the time. In some embodiments, the clock signal that is used to clock the command-and-address circuitry of a memory device is used to clock the on-die-termination latency counter circuitry. | 05-16-2013 |
20130114363 | MULTI-MODAL MEMORY INTERFACE - A multi-modal memory interface that supports each of current-mode and voltage-mode signaling by a memory controller with a memory which includes one or more memory devices. In a first type of system, the memory interface is configured to provide differential current-mode signaling from the memory controller to a first type of memory, and differential voltage-mode signaling from the memory to the memory controller. In contrast, in a second type of system, the memory interface is configured to provide single-ended voltage-mode signaling from the memory controller to the memory, and single-ended voltage-mode signaling from a second type of memory to the memory controller. To support these different types of systems, the memory controller couples different types of drivers to each I/O pad. The resulting capacitance is reduced by sharing components between these drivers. Moreover, in some embodiments, the memory interface is implemented using “near-ground” current-mode and voltage-mode signaling techniques. | 05-09-2013 |
20130114353 | MEMORY METHODS AND SYSTEMS WITH ADIABATIC SWITCHING - A memory system includes wordlines and pairs of complementary bitlines that provide access to memory storage elements. Capacitive and resistive loads associated with wordlines and bitlines are driven relatively slowly between voltage levels to reduce peak current, and thus power dissipation. Power dissipation is further reduced by charging complementary bitlines at substantially different rates. | 05-09-2013 |
20130111256 | DRIFT DETECTION IN TIMING SIGNAL FORWARDED FROM MEMORY CONTROLLER TO MEMORY DEVICE | 05-02-2013 |
20130111176 | MEMORY CONTROLLER WITH STAGGERED REQUEST SIGNAL OUTPUT | 05-02-2013 |
20130111132 | Cache Memory That Supports Tagless Addressing | 05-02-2013 |
20130101005 | Methods and Systems for Near-Field MIMO Communications - A near-field communication (NFC) system supports increased data rates using a multiple-input-multiple-output (MIMO) interface. Multiple receive antennas are positioned within the near field of multiple transmit antennas. The NFC system uses a combination of antenna spacing and polarizations to reduce correlation between channels, and thus improves performance by creating closer to ideal MIMO operation. Such system can also be operated as parallel SISO links with reduced cross-channel interference resulting in low power consumption. | 04-25-2013 |
20130097403 | Address Mapping in Memory Systems - A memory system includes an address mapping circuit. The address mapping circuit receives an input memory address having a first set of address bits. The address mapping circuit applies a logic function to the input memory address to generate a mapped memory address. The logic function uses at least a subset of the first set of address bits in two separate operations that respectively determine two portions of the mapped memory address. | 04-18-2013 |
20130094310 | METHODS AND APPARATUS FOR SYNCHRONIZING COMMUNICATION WITH A MEMORY CONTROLLER - A memory controller receives data and phase-providing signals from a memory device. The phase-providing signal is not a clock signal, but is used by the memory controller to phase align a local data-sampling signal with the incoming data. The memory controller samples the data signal with the data-sampling signal. The memory controller can perform maintenance operations to update the phase relationship between the phase-providing and data-sampling signals. | 04-18-2013 |
20130093433 | Integrated Circuit Having Receiver Jitter Tolerance ("JTOL") Measurement - An integrated circuit capable of on-chip jitter tolerance measurement includes a jitter generator circuit to produce a controlled amount of jitter that is injected into at least one clock signal, and a receive circuit to sample an input signal according to the at least one clock signal. The sampled data values output from the receiver are used to evaluate the integrated circuit's jitter tolerance. | 04-18-2013 |
20130086449 | Sharing a Check Bit Memory Device Between Groups of Memory Devices - A memory system that supports error detection and correction (EDC) coverage. The memory system includes a memory module with at least two groups of memory devices that store data and another memory device that stores error checking information (e.g., Error Correcting Code) for both groups of memory devices. The memory module also includes a memory buffer that determines an address for accessing the error checking information based on whether data is transferred with the first group of memory devices or the second group of memory devices. Alternatively, the memory controller may determine the address for accessing the error checking information to reduce or eliminate the need for a memory buffer. | 04-04-2013 |
20130072171 | ENHANCING MOBILE DEVICE COVERAGE - Embodiments of methods, apparatuses and systems for operating a mobile device are disclosed. One method includes receiving at the mobile device, a call initiated by an endpoint device. Upon determining that an identifier of the call is not associated with at least one preferred operating center, the call is redirected to the at least one preferred operating center. After the redirecting, the redirected call is received by the mobile device from the at least one preferred operating center. | 03-21-2013 |
20130064023 | Memory Systems and Methods for Dynamically Phase Adjusting A Write Strobe and Data to Account for Receive-Clock Drift - A memory system includes a memory controller that writes data to and reads data from a memory device. A write data strobe accompanying the write data indicates to the memory device when the write data is valid, whereas a read strobe accompanying data from the memory device indicates to the memory controller when the read data is valid. The memory controller adaptively controls the phase of the write data strobe to compensate for timing drift at the memory device. The memory controller uses read signals as a measure of the drift. | 03-14-2013 |
20130063191 | Methods and Circuits for Duty-Cycle Correction - A duty-cycle correction circuit calibrates the duty cycle of a periodic input signal. The correction circuit includes a state machine that samples the input signal using a sample signal of a sample period. The sample period is selected to scan a period of the input signal over a number of sample periods. The resultant difference between the number of high and low samples provides a measure of the duty cycle deviation from e.g. 50%. An adjustable delay circuit adjusts the relative timing of the rising and falling edges of the input signal, and thus the duty cycle, responsive to the measure of duty cycle. | 03-14-2013 |
20130051162 | CODED DIFFERENTIAL INTERSYMBOL INTERFERENCE REDUCTION - Encoder and decoder circuits that encode and decode a series of data words to/from a series of code words. The data words include L symbols. The code words include M symbols, where M is larger than L. A set of tightly coupled M links to convey respective symbols in each of the series of code words. The code words are selected such that between every two consecutive code words in a series of code words, an equal number of transitions from low to high and high to low occur on a subset of the M-links. | 02-28-2013 |
20130044552 | STROBE-OFFSET CONTROL CIRCUIT - A method of operation in a memory controller is disclosed. The method includes receiving a strobe signal having a first phase relationship with respect to first data propagating on a first data line, and a second phase relationship with respect to second data propagating on a second data line. A first sample signal is generated based on the first phase relationship and a second sample signal is generated based on the second phase relationship. The first data signal is received using a first receiver clocked by the first sample signal. The second data signal is received using a second receiver clocked by the second sample signal. | 02-21-2013 |
20130039396 | Locked Loop Circuit With Clock Hold Function - A locked loop circuit having a clock hold function. The locked loop circuit includes a select circuit, phase mixing circuit, hold signal generator and latch circuit. The select circuit selects one of a plurality of phase values in response to a select signal, and the phase mixing circuit generates a first clock signal having a phase angle according to the selected phase value. The hold signal generator asserts a hold signal in response to a transition of the select signal, and the latch circuit latches the state of the first clock signal in response to assertion of the hold signal. | 02-14-2013 |
20130038195 | LIGHT BULB WITH THERMAL FEATURES - A light bulb includes a light guide, light source, and housing. The light guide is configured as an open-ended hollow body surrounding an internal volume and defining a longitudinal axis. The light guide has inner and outer major surfaces. The light source is configured to edge light the light guide. The housing is at one end of the light guide. In one embodiment, fins extend from the housing adjacent the outer major surface, each fin separated from the outer major surface by an air gap to allow air flow between the fin and outer major surface. In another embodiment, a heat sink is disposed in the internal volume and configured as a hollow body with a branched cross section. Each branch extends outward from a common center and defines an air flow channel that terminates in an orifice aligned with a respective through-slot of the light guide. | 02-14-2013 |
20130036273 | Memory Signal Buffers and Modules Supporting Variable Access Granularity - Described are memory modules that include a configurable signal buffer that manages communication between memory devices and a memory controller. The buffer can be configured to support threading to reduce access granularity, the frequency of row-activation, or both. The buffer can translate controller commands to access information of a specified granularity into subcommands seeking to access information of reduced granularity. The reduced-granularity information can then be combined, as by concatenation, and conveyed to the memory controller as information of the specified granularity. | 02-07-2013 |
20130034134 | Adjusting Clock Error Across A Circuit Interface - A system is provided with clock skew measurement and correction technology. A first circuit or memory controller | 02-07-2013 |
20130033954 | Memory Buffers and Modules Supporting Dynamic Point-to-Point Connections - A memory module comprises a module interface having module data-group ports to communicate data as respective data groups, a command port to receive memory-access commands, a first memory device including a first device data-group port, a second memory device including a second device data-group port, and a signal buffer coupled between the module interface and each of the first and second devices. In a first mode, in response to the memory-access commands, the signal buffer communicates the data group associated with each of the first and second device data-group ports via a respective one of the module data-group ports. In a second mode, in response to the memory-access commands, the signal buffer alternatively communicates the data group associated with the first device data-group port or the data group associated with the second device data-group port via the same one of the module data-group ports. | 02-07-2013 |
20130033946 | FREQUENCY-AGILE STROBE WINDOW GENERATION - The disclosed embodiments relate to components of a memory system that support frequency-agile strobe enable window generation during read accesses. In specific embodiments, this memory system contains a memory controller which includes a timing circuit to synchronize a timing-enable signal with a timing signal returned from a read path, wherein the timing signal includes a delay from the read path. In some embodiments, the timing circuit further comprises two calibration loops. The first calibration loop tracks the timing-enable signal with respect to a cycle-dependent delay in the delay, wherein the cycle-dependent delay depends on a frequency of the strobe signal. The second calibration loop tracks the timing-enable signal with respect to a cycle-independent delay in the delay, wherein the cycle-independent delay does not depend on the frequency of the strobe signal. In some embodiments, the first calibration loop and the second calibration loop are cascaded. | 02-07-2013 |