OSRAM Opto Semiconductors GmbH Patent applications |
Patent application number | Title | Published |
20160141277 | ARRANGEMENT AND METHOD FOR GENERATING MIXED LIGHT - The invention relates to an arrangement for generating mixed light, which comprises three semiconductor chips, emitting in the blue spectral range, of three devices. Arranged in the light paths of the individual semiconductor chips are different conversion elements which are configured to convert primary radiation into secondary radiation. The total radiation (S1, S2, S3) exiting the respective devices ( | 05-19-2016 |
20160122636 | Method for Producing a Pulverulent Precursor Material, Pulverulent Precursor Material, and Use of Pulverulent Precursor Material - A method can be used for producing a powdery precursor material for an optoelectronic component having a first phase of the following general composition (Ca | 05-05-2016 |
20160118553 | OPTOELECTRONIC COMPONENT AND METHOD FOR THE PRODUCTION THEREOF - An optoelectronic component includes a housing having a first cavity open toward an upper side of the housing, and a second cavity open toward the upper side of the housing, wherein the first cavity and the second cavity connect by a connecting channel, an optoelectronic semiconductor chip is arranged in the first cavity, a potting material is arranged in a region of the first cavity enclosing the optoelectronic semiconductor chip, a bond wire is arranged between an electrical contact surface of the optoelectronic semiconductor chip and a bond surface of the housing, and the bond surface is arranged in the connecting channel. | 04-28-2016 |
20160104822 | METHOD FOR THE PRODUCTION OF A WAVELENGTH CONVERSION ELEMENT, WAVELENGTH CONVERSION ELEMENT, AND COMPONENT COMPRISING THE WAVELENGTH CONVERSION ELEMENT - Disclosed is a method for producing a wavelength conversion element ( | 04-14-2016 |
20160104819 | METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR CHIP - A method for producing an optoelectronic semiconductor chip comprises the following steps: providing a substrate, depositing a sacrificial layer, depositing a functional semiconductor layer sequence, laterally patterning the functional semiconductor layer sequence, and oxidizing the sacrificial layer in a wet thermal oxidation process. | 04-14-2016 |
20160093765 | Method for Producing a Nitride Compound Semiconductor Device - A method is provided for producing a nitride compound semiconductor device. A growth substrate has a silicon surface. A buffer layer, which comprises Al | 03-31-2016 |
20160060517 | Method for Producing a Powdery Precursor Material, Powdery Precursor Material and Use Thereof - A method can be used for producing a powdery precursor material of the following general composition I or II or III or IV: I: (Ca | 03-03-2016 |
20160056349 | ASSEMBLY THAT EMITS ELECTROMAGNETIC RADIATION AND METHOD OF PRODUCING AN ASSEMBLY THAT EMITS ELECTROMAGNETIC RADIATION - An electromagnetic radiation emitting assembly includes a carrier, an electromagnetic radiation emitting component arranged above the carrier, and a potting material at least partly surrounding the electromagnetic radiation emitting component and into which are embedded phosphor that converts the electromagnetic radiation and heat-conducting particles that conduct heat arising during operation of the electromagnetic radiation emitting assembly, wherein a phosphor concentration in the potting material near the electromagnetic radiation emitting component is greater than a particle concentration of the heat-conducting particles in the potting material near the electromagnetic radiation emitting component, and a particle concentration of the heat-conducting particles in the potting material near the electromagnetic radiation emitting component is greater than in the potting material remote from the electromagnetic radiation emitting component. | 02-25-2016 |
20160049556 | RADIATION-EMITTING SEMICONDUCTOR CHIP - A radiation-emitting semiconductor chip ( | 02-18-2016 |
20160036198 | Housing and Method for Producing a Housing - A housing for an optoelectronic semiconductor component includes a housing body having a mounting plane and a leadframe with a first connection conductor and a second connection conductor. The housing body deforms the leadframe in some regions. The leadframe has a main extension plane which extends obliquely or perpendicularly with respect to the mounting plane. A semiconductor component having such a housing and a semiconductor chip and a method for producing a housing are also disclosed. | 02-04-2016 |
20160027980 | Optoelectronic Semiconductor Chip and Optoelectronic Module - An optoelectronics semiconductor chip has a substrate and a semiconductor body arranged on the substrate and has a semiconductor layer sequence. The semiconductor layer sequence includes an active region arranged between a first semiconductor layer and a second semiconductor layer and is provided to generate or to receive radiation. The first semiconductor layer is electrically conductively connected to a first contact and to a second contact. The first contact is formed on a front side of the substrate, facing the semiconductor body. The second contact is formed on a rear side of the substrate, facing away from the semiconductor body. The first contact and the second contact are electrically conductively connected to each other. | 01-28-2016 |
20160027972 | METHOD OF ENCAPSULATING AN OPTOELECTRONIC DEVICE AND LIGHT-EMITTING DIODE CHIP - A method of encapsulating an optoelectronic device includes providing a surface intended to be encapsulated, the surface containing platinum, generating reactive oxygen groups and/or reactive hydroxyl groups on the surface, and depositing a passivation layer by atomic layer deposition on the surface. | 01-28-2016 |
20160027765 | Display Device - A display device includes at least one semiconductor body, which has a semiconductor layer sequence, which has an active region provided for producing radiation and forms a plurality of pixels. The device also includes a driver circuit that has a plurality of switches, which are each provided for controlling at least one pixel. A first metallization layer and/or the second metallization layer are electroconductively connected to at least one of the pixels. The first metallization layer and the second metallization layer are arranged overlapping one another in such a manner that, in a plan view onto the display device, the driver circuit is covered with at least one of the metallization layers at every point which overlaps with one of the pixels or is arranged between two adjacent pixels. | 01-28-2016 |
20160005930 | OPTOELECTRONIC SEMICONDUCTOR CHIP ENCAPSULATED WITH AN ALD LAYER AND CORRESPONDING METHOD OF PRODUCTION - An optoelectronic semiconductor chip includes a semiconductor body including n-conducting and p-conducting regions, an active region generating electromagnetic radiation, a mirror layer reflecting the electromagnetic radiation, and an encapsulating layer sequence formed with an insulating material, wherein the mirror layer is arranged at an underside of the p-conducting region, the active region is arranged at a side of the p-conducting region facing away from the mirror layer, the n-conducting region is arranged at a side of the active region facing away from the p-conducting region, the encapsulation layer sequence covers the semiconductor body at the outer surface thereof in places, the encapsulation layer sequence extends at the outer surface of the semiconductor body from the active region along the p-conducting region as far as below the mirror layer, and the encapsulation layer sequence includes at least one encapsulation layer which is an ALD layer or consists of an ALD layer. | 01-07-2016 |
20160005722 | Optoelectronic Semiconductor Component and Method for Producing Same - An optoelectronic semiconductor component includes an optoelectronic semiconductor chip with a first surface and a second surface. The component also includes a protective chip which has a protective diode, a first surface and a second surface. The semiconductor chip and the protective chip are embedded in a molded body. A first electrical contact and a second electrical contact are arranged on the first surface of the semiconductor chip. A third electrical contact and a fourth electrical contact are arranged on the first surface of the protective chip. The first electrical contact is electrically connected to the third electrical contact. In addition, the second electrical contact is electrically connected to the fourth electrical contact. | 01-07-2016 |
20160005720 | Method for Producing an Optoelectronic Device and Optoelectronic Device - A method for producing an optoelectronic device is specified. A housing base body is formed with a self-healing polymer material. A recess is found in the housing base body. The recess is confined by a bottom surface and at least one side wall which are formed at least in places by the plastic material of the base body. An optoelectronic semiconductor chip has a first main surface, a second main surface facing away from the first main surface and at least one side surface connecting the first main surface and the second main surface with each other. The optoelectronic semiconductor chip is placed in the recess, so that the first main surface is brought in contact with the bottom surface and the at least one side surface is brought in contact with the at least one side wall. | 01-07-2016 |
20160003436 | Optoelectronic Lighting Module, Optoelectronic Lighting Apparatus and Vehicle Headlamp - An optoelectronic lighting module ( | 01-07-2016 |
20150372054 | MONOLITHIC SEMICONDUCTOR CHIP ARRAY - A semiconductor chip ( | 12-24-2015 |
20150349222 | Reflector Trough for an Optoelectronic Semiconductor Component - An optoelectronic semiconductor component includes a lead frame with two lead frame parts and an optoelectronic semiconductor chip. The semiconductor chip is fitted to a first of the lead frame parts. A radiation-transmissive potting body of the semiconductor component mechanically connects the lead frame parts to one another. The potting body is set up for beam shaping. The first lead frame part has a reflector trough with a base surface on which the semiconductor chip is mounted. The reflector trough has a lateral surface with three sections. When seen in a plan view of the base surface, the sections revolve around the base surface and follow one another in a direction away from the base surface. In the first section, closest to the base surface, the lateral surface is oriented perpendicular to the base surface. | 12-03-2015 |
20150346397 | OPTOELECTRONIC DEVICE - The invention relates to an optoelectronic device ( | 12-03-2015 |
20150311471 | ELECTRONIC STRUCTURE HAVING AT LEAST ONE METAL GROWTH LAYER AND METHOD FOR PRODUCING AN ELECTRONIC STRUCTURE - Various embodiments may relate to an electronic structure, including at least one organic layer, at least one metal growth layer grown onto the organic layer, and at least one metal layer grown on the metal growth layer. The at least one metal growth layer contains germanium. Various embodiments further relate to a method for producing the electronic structure. | 10-29-2015 |
20150311407 | Optoelectronic Semiconductor Component and Method for Producing an Optoelectronic Semiconductor Component - An optoelectronic semiconductor component has a carrier and at least one semiconductor chip for emitting electromagnetic radiation. The semiconductor chip has two or more individually controllable elements. The semiconductor component additionally has a wavelength conversion element for at least partial conversion of the primary radiation emitted by the semiconductor chip into a secondary electromagnetic radiation. Each of the elements is suitable for generating primary radiation. The wavelength conversion element is structured into subregions. At least one individually controllable element of the semiconductor chip is associated with each subregion of the wavelength conversion element. | 10-29-2015 |
20150311404 | Optoelectronic Semiconductor Component - An optoelectronic semiconductor component is provided, having a connection carrier ( | 10-29-2015 |
20150301176 | OPTOELECTRONIC APPARATUS - The invention relates to an optoelectronic device ( | 10-22-2015 |
20150287880 | METHOD FOR SEPARATING REGIONS OF A SEMICONDUCTOR LAYER - The invention relates to a method for separating regions of a semiconductor layer and for introducing an outcoupling structure into an upper side of the semiconductor layer, the outcoupling structure being provided to couple light out of the semiconductor layer. The upper side of the semiconductor layer is covered by a mask having first openings for introducing the outcoupling structure and at least a second opening, which is provided to introduce a separating trench into the semiconductor layer. With the aid of an etching method, the outcoupling structure is introduced into the upper side of the semiconductor layer in the region of the first openings and simultaneously a separating trench passing through the semiconductor layer is introduced into the semiconductor layer via the second opening, and a region of the semiconductor layer is separated. | 10-08-2015 |
20150270459 | OPTOELECTRONIC SEMICONDUCTOR COMPONENT - The invention relates to an optoelectronic semiconductor component, which has a carrier element ( | 09-24-2015 |
20150255683 | Method for Fixing a Matrix-Free Electrophoretically Deposited Layer on a Semiconductor Chip for the Production of a Radiation-Emitting Semiconductor Component, and Radiation-Emitting Semiconductor Component - A method can be used for fixing a matrix-free electrophoretically deposited layer on a semiconductor chip. A semiconductor wafer has a carrier substrate-and at least one semiconductor chip. The at least one semiconductor chip has an active zone for generating electromagnetic radiation. At least one contact area is formed on a surface of the at least one semiconductor chip facing away from the carrier substrate. A material is electrophoretically deposited on the surface of the at least one semiconductor chip facing away from the carrier substrate in order to form the electrophoretically deposited layer. Deposition of the material on the at least one contact area is prevented. An inorganic matrix material is applied to at least one section of a surface of the semiconductor wafer facing away from the carrier substrate in order to fix the material on the at least one semiconductor chip. | 09-10-2015 |
20150249073 | Optoelectronic Semiconductor Apparatus and Carrier Assembly - A semiconductor apparatus with an optoelectronic device and a further device is disclosed. Embodiments of the invention provide a semiconductor apparatus with an optoelectronic device and a further device, wherein the optoelectronic device and the further device are interconnected to one another in parallel when the semiconductor apparatus is in operation, wherein the optoelectronic device is connected to a first contact and a second contact, the first contact and the second contact being configured to externally contact the semiconductor apparatus, and wherein the further device is connected with at least one further contact of the semiconductor apparatus. | 09-03-2015 |
20150249072 | Optoelectronic Component and Method for Producing an Optoelectronic Component - An optoelectronic component includes an electrically insulating connection carrier constructed in a multipartite fashion. The connection carrier has at least one ceramic layer and a silicon layer. The silicon layer has an electrically conductive layer on the top side of the silicon layer facing away from the ceramic layer. A light-emitting diode is electrically conductively and mechanically connected to the connection carrier via the electrically conductive layer. A method for producing an optoelectronic component is furthermore specified. | 09-03-2015 |
20150245436 | Compensation of a Color Locus Shift - The present invention relates to an arrangement for emitting mixed light comprising at least three diodes, comprising a first drive circuit supplying the first diode with current via a first channel, wherein the first diode is of type A, wherein type A represents a diode configured to emit green and/or green-white light, wherein the drive circuit supplies the series-connected second and third diodes with current via a second channel, wherein the second diode is of type B, wherein type B represents a diode configured to emit red light, wherein the third diode is of type C, wherein type C represents a diode configured to emit blue and/or blue-white light, wherein the drive circuit is configured to change, depending on an operating parameter of at least one diode, the current supply for the first and/or second channel so as to counteract a colour locus shift of a diode. | 08-27-2015 |
20150243850 | Optoelectronic Semiconductor Component and Method for Producing a Mirror Region on a Semiconductor Body - A method for manufacturing an optoelectronic semiconductor component and an optoelectronic semiconductor component are disclosed. In an embodiment the component comprises a semiconductor body having a main surface and a mirror region adjoining the main surface of the semiconductor body at least regionally, wherein the minor region has a plurality of domains of a first material composition, the domains being spaced apart from one another and adjoining the main surface, wherein the mirror region comprises a continuous mirror layer of a second material composition, and wherein the mirror layer adjoins the main surface at least regionally between the domains. | 08-27-2015 |
20150241026 | Lighting Device, Backlighting for a Display or a Television, and Display or Television - A lighting device includes a first semiconductor body, which has an active zone that produces blue light having a first emission spectrum during operation, and a second semiconductor body, which has an active zone that produces green light having a second emission spectrum during operation. The lighting device also comprises a luminescent substance that is suitable for converting blue light of the first semiconductor body partially into red light having a third emission spectrum. The third emission spectrum has a peak in the red spectral range, the average half-width of which is no greater than 25 nm. The invention further relates to a backlighting device for a display or a television and to a display and a television. | 08-27-2015 |
20150228874 | Optoelectronic Component and Method for Producing an Optoelectronic Component - An optoelectronic component includes a substrate, a connecting element applied on the substrate and a layer sequence that emits electromagnetic radiation. The layer sequence is applied on the connecting element. The connecting element includes at least one connecting material that has an oriented molecular configuration. The connecting element has at least one parameter that is anisotropic. | 08-13-2015 |
20150228871 | Method for Producing a Laser Diode, Mount and Laser Diode - In a method for producing a laser diode, a number of laser diodes are produced on a wafer. The wafer is broken down into wafer pieces, each wafer piece having a plurality of laser diodes being arranged side by side. One wafer piece is inserted into a first mount that includes a first covering element overlapping a front face of the wafer piece and shadowing a bottom area of the front face of the wafer piece. A minor layer is deposited on an unshadowed upper area of the wafer piece's front face. The wafer piece is inserted into a second mount, which includes a second covering element that shadows the minor layer of the upper area of the front face. An electrically conductive contact layer is deposited on an unshadowed bottom area of the wafer piece's front face. The wafer piece is subsequently broken down into individual laser diodes. | 08-13-2015 |
20150228858 | OPTOELECTRONIC COMPONENT WITH A LAYER STRUCTURE - An optoelectronic component includes a layer structure which has a first gallium nitride layer and an aluminum-containing nitride intermediate layer. In this case, the aluminum-containing nitride intermediate layer adjoins the first gallium nitride layer. The layer structure has an undoped second gallium nitride layer which adjoins the aluminum-containing nitride intermediate layer. | 08-13-2015 |
20150226839 | OPTOELECTRONIC DEVICE - An optoelectronic device includes an optoelectronic component that generates or receives radiation, a frame and an optical element, wherein the frame extends in a vertical direction between a radiation passage side and a rear side; an opening, in which the component is arranged, is formed in the frame; the optical element covers the component in a plan view of the radiation passage side; and the optical element is a Fresnel lens or a Fresnel zone plate. | 08-13-2015 |
20150214696 | Laser Diode Assembly and Method for Producing a Laser Diode Assembly - A laser diode arrangement having at least one semiconductor substrate, having at least two laser stacks each having an active zone and having at least one intermediate layer. The laser stacks and the intermediate layer are grown monolithically on the semiconductor substrate. The intermediate layer is arranged between the laser stacks. The active zone of the first laser stack can be actuated separately from the active zone of the at least one further laser stack. | 07-30-2015 |
20150214447 | OPTOELECTRONIC COMPONENT COMPRISING A TRANSPARENT COUPLING-OUT ELEMENT - What is specified is an optoelectronic component comprising a layer sequence having an active layer, which emits primary electromagnetic radiation, and at least one transparent coupling-out element arranged in the beam path of the primary electromagnetic radiation. The at least one transparent coupling-out element comprises a hybrid material or is produced from a hybrid material. | 07-30-2015 |
20150211718 | FLEXIBLE PRINTED CIRCUIT BOARD FOR ELECTRICALLY CONTACTING AND MECHANICALLY FIXING A LAMP IN A LUMINAIRE - A printed circuit board which at least in sections is formed as a flexible printed circuit board may include: a first flat side at least one conductor track extending on the first flat side, and an electrically insulating cover layer partially coating the first flat side, wherein the at least one conductor track has an exposed contact section, for electrical contacting of the conductor track, wherein a through-hole, which extends fully through the printed circuit board in the thickness direction of the printed circuit board, and is formed in the printed circuit board, and wherein the exposed contact section of the conductor track is arranged next to the through-hole so that a mechanical fastening means, which has a shaft and a head, can be fitted with its shaft into the through-hole, the head directly contacting the exposed contact section. | 07-30-2015 |
20150207294 | Method for Producing a Radiation-Emitting Component and Radiation-Emitting Component - A method proposed for manufacturing a radiation-emitting component in which a field distribution of a near field in a direction perpendicular to a main emission axis of the component is specified. From the field distribution of the near field, an index of refraction profile along this direction is determined. A structure is determined for the component such that the component will have the previously determined index of refraction profile. The component is constructed according to the previously determined structure. A radiation-emitting component is also disclosed. | 07-23-2015 |
20150207044 | METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT - A method for producing a plurality of optoelectronic components ( | 07-23-2015 |
20150204718 | MEASUREMENT OF THE LIGHT RADIATION OF LIGHT-EMITTING DIODES - The invention relates to a method for measuring a light radiation ( | 07-23-2015 |
20150194788 | RIDGE LASER - In at least one embodiment, the bar laser ( | 07-09-2015 |
20150194411 | Optoelectronic Semiconductor Chip - An optoelectronic semiconductor chip includes an interconnection layer with a first electrically conductive contact layer, a second electrically conductive contact layer and an insulation layer, which is formed of an electrically insulating material. Further, the optoelectronic semiconductor chip includes two optoelectronic semiconductor bodies, each of which include an active region that is intended to generate radiation. The insulation layer is arranged on a top of the second electrically conductive contact layer facing the optoelectronic semiconductor bodies. The first electrically conductive contact layer is arranged on a top of the insulation layer remote from the second electrically conductive contact layer. The optoelectronic semiconductor bodies are interconnected electrically in parallel by the interconnection layer. | 07-09-2015 |
20150187985 | Method for Producing an Optoelectronic Semiconductor Chip and Optoelectronic Semiconductor Chip - In at least one embodiment, the method is designed to produce an optoelectronic semiconductor chip. The method includes at least the following steps in the stated sequence: A) providing a growth substrate with a growth side, B) depositing at least one nucleation layer based on Al | 07-02-2015 |
20150177366 | Optoelectronic Device and Apparatus Having Such a Device - An optoelectronic device has a first component provided to generate radiation, a second component provided to receive radiation, a connection board and a frame. The first component and the second component are arranged on the connection board. The frame is arranged on the connection board. The first component is arranged in a first opening in the frame. The second component is arranged in a second opening in the frame. The first opening and the second opening extend from a main face of the frame opposite the connection board in the direction of the connection board. The main face between the first opening and the second opening has an intermediate region, in which a reflection of radiation incident on the main face is reduced. | 06-25-2015 |
20150129901 | Optoelectronic Semiconductor Chip and Method for Producing an Optoelectronic Semiconductor Chip - An optoelectronic semiconductor chip and a method for producing an optoelectronic semiconductor chip are disclosed. In an embodiment an optoelectronic semiconductor chip includes a support having a support top side, a semiconductor layer sequence having an active layer for generating electromagnetic radiation, wherein the active layer is located between an n-type n-layer and a p-type p-layer of the semiconductor layer sequence, wherein the semiconductor layer sequence, as seen in a plan view of the support top side, is patterned into emitter regions arranged next to one another and electrical conductor tracks located on a side of the semiconductor layer sequence facing away from the support, where the electrical conductor tracks include contact surfaces. The chip further includes an n-contact point and a p-contact point for electrically contacting the semiconductor chip, wherein the emitter regions are electrically connected in series via the at least two conductor tracks. | 05-14-2015 |
20150122785 | PROCESS OF PRODUCING A COMPONENT AND APPARATUS THAT PRODUCES A COMPONENT - A process of producing a component includes providing a substrate having an electrically conductive surface in the form of an electrically conductive layer; subdividing the layer with the aid of a laser process into a first electrically autonomous region and a second electrically autonomous region, wherein an electrically insulating region is formed in the electrically conductive layer to electrically separate the electrically autonomous regions; forming an electrical potential difference between the first electrically autonomous region and the second electrically autonomous region; and applying an electrically charged substance or an electrically charged substance mixture onto the first electrically autonomous region and/or the second electrically autonomous region, wherein the electrically autonomous region and/or an amount of the applied electrically charged substance or of the electrically charged substance mixture are adjusted by the electrical potential difference. | 05-07-2015 |
20150108426 | METHOD FOR PRODUCING AN ACTIVE ZONE FOR AN OPTOELECTRONIC SEMICONDUCTOR CHIP AND OPTOELECTRONIC SEMICONDUCTOR CHIP - In at least one embodiment, the method is designed to produce an active zone for an optoelectronic semiconductor chip and comprises the following steps: growing a fourth barrier layer ( | 04-23-2015 |
20150102374 | OPTOELECTRONIC COMPONENT AND METHOD FOR PRODUCING IT - An optoelectronic component is specified. According to at least one embodiment of the invention, the optoelectronic component comprises a housing ( | 04-16-2015 |
20150097198 | Surface Light Source - In at least one embodiment, a surface light source includes one or a more optoelectronic semiconductor chips having a radiation main side for generating a primary radiation. A scattering body is disposed downstream of the radiation main side along a main emission direction of the semiconductor chips. The scatting body is designed for scattering the primary radiation. A main emission direction of the scattering body is oriented obliquely with respect to the main emission direction of the semiconductor chip. | 04-09-2015 |
20150091435 | Organic Light-Emitting Diode and Device Comprising an Organic Light-Emitting Diode - In at least one embodiment, a light-emitting diode includes a carrier and an organic layer sequence with an active layer. A mirror layer and electrical contact regions are located on a connection side of the carrier. The contact regions are provided for electrically contacting the organic layer sequence. Electrical dummy regions are located on the connection side. The dummy regions are electrically insulated from the contact regions. The mirror layer is present in the dummy regions and in the contact regions. At least two of the dummy regions are arranged in such a way that base areas of these dummy regions cannot be congruently superimposed merely by arbitrary rotation of the carrier relative to a center axis of the carrier perpendicular to the connection side. | 04-02-2015 |
20150076507 | EPITAXY SUBSTRATE, METHOD FOR PRODUCING AN EPITAXY SUBSTRATE AND OPTOELECTRONIC SEMICONDUCTOR CHIP COMPRISING AN EPITAXY SUBSTRATE - An epitaxy substrate ( | 03-19-2015 |
20150060233 | ASSEMBLY FOR SORTING OPTOELECTRONIC DEVICES - An assembly for sorting optoelectronic devices ( | 03-05-2015 |
20150049502 | Optoelectronic Semiconductor Chip and Headlamp Having Such a Semiconductor Chip - In at least one embodiment, the optoelectronic semiconductor chip includes a semiconductor layer sequence having an active layer configured to generate a primary radiation having a main wavelength less than 500 nm. The semiconductor chip contains a first conversion element configured to generate a first secondary radiation and a second conversion element configured to generate a second secondary radiation. The semiconductor layer sequence is divided into segments that can be controlled electrically independently of each other and that are arranged laterally adjacent to each other. The conversion elements are attached to main radiation sides of the segments. The first secondary radiation is colored light and the second secondary radiation white light. | 02-19-2015 |
20150048337 | Organic Light-Emitting Component - An organic light-emitting component includes a first light-emitting layer sequence, which is designed to emit light in a first wavelength range during the operation of the component. A second light-emitting layer sequence which is designed to emit light in a second wavelength range during the operation of the component. A charge carrier generating layer sequence which is designed to output charge carriers to the first light-emitting layer sequence and to the second light-emitting layer sequence during the operation of the component. The first wavelength range differs from the second wavelength range. The charge carrier generating layer sequence is arranged between the first light-emitting layer sequence and the second light-emitting layer sequence in a stacking direction of the organic light-emitting component. | 02-19-2015 |
20150044798 | Method for Producing an Optoelectronic Component - A method for producing an optoelectronic component is provided. A transfer layer, containing In | 02-12-2015 |
20150041840 | Optoelectronic Semiconductor Component, and Method for the Manufacture of an Optoelectronic Semiconductor Component - In at least one embodiment, the semiconductor component includes a semiconductor layer sequence with an active layer for generating an electromagnetic radiation. The semiconductor component includes a radiation-permeable element and a connecting element. The connecting element is layered in form and connects the radiation-permeable element and the semiconductor layer sequence to another mechanically. The connecting element is designed to be passed through by at least one part of the radiation generated in the active layer. A refractive index of the connecting means deviates from a refractive index of the semiconductor layer sequence by a maximum of 25%. The connecting element includes at least two principal components, which are solids at a temperature of 300 K. At least one of the principal components has a melting temperature of no more than 750 K. | 02-12-2015 |
20150041832 | OPTOELECTRONIC SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING SUCH AN OPTOELECTRONIC SEMICONDUCTOR COMPONENT - In at least one embodiment of the optoelectronic semiconductor component ( | 02-12-2015 |
20150034930 | ORGANIC LIGHT-EMITTING DEVICE - An organic light-emitting component is specified, comprising a translucent substrate ( | 02-05-2015 |
20150028318 | Organic Optoelectronic Device and Method for Producing an Organic Optoelectronic Device - An organic optoelectronic device has a first substrate, on which a functional layer stack having at least one first electrode, thereabove an organic functional layer and thereabove a second electrode is arranged. A encapsulating arrangement includes a second substrate, on which a connecting material and at least one spacer facing the functional layer stack are applied. The connecting material is arranged between the first and second substrate and mechanically connects the first and second substrate together. The functional layer stack is enclosed by the connecting material in a frame-like manner. At least one of the first and second electrode includes at least one opening, above which the at least one spacer is arranged and which has a larger lateral dimension that the spacer. | 01-29-2015 |
20150027541 | ELECTRONIC COMPONENT WITH MOISTURE BARRIER LAYER - Various embodiments may relate to an electronic component including a layer to be protected against moisture, and a moisture barrier layer arranged at least partly on or above and/or below the layer to be protected. The moisture bather layer includes a plurality of layers composed of the same material having different stoichiometric compositions. | 01-29-2015 |
20150022762 | OPTOELECTRONIC SEMICONDUCTOR COMPONENT AND MODULE WITH A PLURALITY OF SUCH COMPONENTS - The invention relates to a semi-conductor component, comprising a semi-conductor chip ( | 01-22-2015 |
20150021636 | Optoelectronic Semiconductor Chip - An optoelectronic semiconductor chip includes a number active regions that are arranged at a distance from each other and a substrate that is arranged on an underside of the active regions. One of the active regions has a main extension direction. The active region has a core region that is formed using a first semiconductor material. The active region has an active layer that covers the core region at least in directions perpendicular to the main extension direction of the active region. The active region has a cover layer that is formed using a second semiconductor material and covers the active layer at least in directions perpendicular to the main extension direction of the active region. | 01-22-2015 |
20150014737 | Method for Producing an Optoelectronic Semiconductor Component, and Optoelectronic Semiconductor Component - In at least one embodiment, the semiconductor component includes at least one optoelectronic semiconductor chip having a radiation exit side. The surface-mountable semiconductor component comprises a shaped body that covers side surfaces of the semiconductor chip directly and in a positively locking manner. The shaped body and the semiconductor chip do not overlap, as seen in a plan view of the radiation exit side. | 01-15-2015 |
20150011037 | CONVERTER PLATE, A RADIATION-EMITTING DEVICE HAVING SUCH A CONVERTER PLATE AND A METHOD OF PRODUCING SUCH A CONVERTER PLATE - A converter plate adapted to be attached to a radiation-emitting semiconductor chip, the converter plate containing a base material made of glass in which a plurality of openings is arranged, in each of which a converter material is installed. | 01-08-2015 |
20140374729 | METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT, AND OPTOELECTRONIC COMPONENT - Various embodiments relate to a method for producing an optoelectronic component includes applying a planarization medium to a surface of a substrate, wherein the planarization medium comprises a material which absorbs electromagnetic radiation having wavelengths of a maximum of 600 nm, applying a first electrode on or above the material, forming an organic functional layer structure on or above the first electrode, and forming a second electrode on or above the organic functional layer structure. | 12-25-2014 |
20140361279 | ORGANIC LIGHT-EMITTING DIODE - In at least one embodiment, the organic light-emitting diode ( | 12-11-2014 |
20140354313 | Method for Temporary Electrical Contacting of a Component Arrangement and Apparatus Therefor - A method for temporary electrical contacting of a component arrangement with a plurality of contact surfaces is described. A connection support includes a plurality of connection surfaces, on which contact protrusions are disposed. The connection support and component arrangement are brought together in such a way that the connection surfaces and the associated contact surfaces overlap in a top view and the contact protrusions form an electrical contact with respect to the contact surfaces in order to achieve electrical contacting of the component arrangement. Subsequently the connection support and the component arrangement are separated from each other. | 12-04-2014 |
20140353710 | Method for Producing Optoelectronic Semiconductor Components, Leadframe Assemblage and Optoelectronic Semiconductor Component - A method serves to produce optoelectronic semiconductor components. A leadframe assemblage includes a number of leadframes. The leadframes each comprise at least two leadframe parts and are connected together at least in part via connecting webs. Electrical connections are attached between neighboring leadframes. A potting body connects the leadframes and the leadframe parts mechanically together. At least some of the connecting webs are removed and/or interrupted, the resulting structure is singulated into the semiconductor components. | 12-04-2014 |
20140353581 | LIGHT-EMITTING DIODE CHIP - A light-emitting diode chip comprising:—a semiconductor body ( | 12-04-2014 |
20140346541 | METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR CHIP AND OPTOELECTRONIC SEMICONDUCTOR CHIP - A method of producing an optoelectronic semiconductor chip includes providing a growth substrate, producing a III nitride nucleation layer on the growth substrate by sputtering, wherein a material of the growth substrate differs from a material of the nucleation layer, and growing a III nitride semiconductor layer sequence having an active layer onto the nucleation layer. | 11-27-2014 |
20140342484 | METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR CHIP AND CORRESPONDING OPTOELECTRONIC SEMICONDUCTOR CHIP - A method of producing a semiconductor chip includes providing a silicon growth substrate, producing a III nitride buffer layer on the growth substrate by sputtering, and growing a III nitride semiconductor layer sequence having an active layer above the buffer layer. | 11-20-2014 |
20140339577 | OPTOELECTRONIC SEMICONDUCTOR CHIP - An optoelectronic semiconductor chip includes a multiplicity of active regions, arranged at a distance from one another, and a reflective layer arranged at an underside of the multiplicity of active regions, wherein at least one of the active regions has a main extension direction, one of the active regions has a core region formed with a first semiconductor material, the active region has an active layer, covering the core region at least in directions transversely with respect to the main extension direction of the active region, the active region has a cover layer formed with a second semiconductor material and covers the active layer at least in directions transversely with respect to the main extension direction of the active region, and the reflective layer reflects electromagnetic radiation generated during operation in the active layer. | 11-20-2014 |
20140334508 | Semiconductor Laser Diode - A semiconductor laser diode is provided. A semiconductor layer sequence has semiconductor layers applied vertically one above the other. An active layer includes an active region having a width of greater than or equal to 30 μm emitting laser radiation during operation via a radiation coupling-out surface. The radiation coupling-out surface is formed by a lateral surface of the semiconductor layer sequence and forms, with an opposite rear surface, a resonator having lateral gain-guiding in a longitudinal direction. The semiconductor layer sequence is heated in a thermal region of influence by reason of the operation. A metallization layer is in direct contact with a top side of the semiconductor layer sequence | 11-13-2014 |
20140326948 | SEMICONDUCTOR LAYER SEQUENCE, OPTOELECTRONIC SEMICONDUCTOR CHIP AND METHOD FOR PRODUCING A SEMICONDUCTOR LAYER SEQUENCE - In at least one embodiment, the semiconductor layer sequence ( | 11-06-2014 |
20140319572 | CERAMIC CONVERSION ELEMENT, OPTOELECTRONIC COMPONENT COMPRISING A CERAMIC CONVERSION ELEMENT, AND METHODS FOR PRODUCING A CERAMIC CONVERSION ELEMENT - A ceramic conversion element includes a multiplicity of first regions and a multiplicity of second regions, wherein the first regions vitreous, ceramic or monocrystalline fashion, at least either the first regions or the second regions are columnar and have a preferred direction forming an angle of at most 45° with a normal to a main surface of the conversion element, the first regions convert electromagnetic radiation in a first wavelength range into electromagnetic radiation in a second wavelength range different from the first wavelength range, the second regions convert electromagnetic radiation in the first wavelength range into electromagnetic radiation in a third wavelength range different from the first and second wavelength ranges, wherein the second regions are formed by a resin into which phosphor particles are embedded. | 10-30-2014 |
20140319566 | LIGHT EMITTING DIODE CHIP - A light emitting diode chip includes a semiconductor layer sequence having an active layer that generates electromagnetic radiation, wherein the light emitting diode chip has a radiation exit area at a front side, the light emitting diode chip has a mirror layer at least in regions at a rear side situated opposite the radiation exit area, said mirror layer containing silver, a protective layer is arranged on the mirror layer, and the protective layer comprises a transparent conductive oxide. | 10-30-2014 |
20140319482 | LIGHT-EMITTING COMPONENT AND METHOD FOR PRODUCING A LIGHT-EMITTING COMPONENT - A light-emitting component may include: a first electrode; an organic electroluminescent layer structure on or above the first electrode; a second translucent electrode on or above the organic electroluminescent layer structure; an optically translucent layer structure on or above the second electrode, wherein the optically translucent layer structure includes photoluminescence material; and a mirror layer structure on or above the optically translucent layer structure. | 10-30-2014 |
20140313728 | Arrangement comprising a light emitting diode - An arrangement for generating light comprising a light emitting diode, comprising a conversion element, is proposed, wherein the conversion element is arranged above the light emitting diode and is provided for at least partly changing the wavelength of the electromagnetic radiation emitted by the light emitting diode, wherein the conversion element is designed in such a way that the light impinging on the conversion element from outside in a first color range is reflected, wherein the conversion element is surrounded by an edge region, wherein the edge region is designed in such a way that light impinging on the edge region in a second color range is reflected, wherein the second color range at least partly has a color range complementary to the first color range. | 10-23-2014 |
20140312375 | Method for producing an optoelectronic assembly and optoelectronic assembly - A method for producing an optoelectronic assembly ( | 10-23-2014 |
20140307755 | RADIATION-EMITTING COMPONENT - A radiation-emitting component is specified, having a metallic carrier body ( | 10-16-2014 |
20140295589 | OPTOELECTRONIC COMPONENT AND METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT - An optoelectronic component includes a semiconductor layer sequence having an optoelectronically active region; a dielectric layer on the semiconductor layer sequence; and a metal layer on the dielectric layer, wherein an adhesion layer is arranged between the dielectric layer and the metal layer, the adhesion layer being covalently bonded to the dielectric layer and to the metal layer. | 10-02-2014 |
20140293604 | LIGHT-EMITTING MEANS AND USE - A light emitter with a radiation exit surface including a housing part with a receptacle, at least one organic optoelectronic device, arranged in the receptacle, and at least one cover part joined to the housing part, wherein the device is mounted between the cover part and the housing part. | 10-02-2014 |
20140291658 | OPTOELECTRONIC COMPONENT - An optoelectronic component having an outer surface facing the environment of the optoelectronic component and which is formed by a hydrophobic layer applied at least partly on a surface of the optoelectronic component. | 10-02-2014 |
20140286369 | OPTOELECTRONIC COMPONENT - An optoelectronic device having an active layer that includes a multiplicity of structural elements spaced apart from one another laterally, wherein the structural elements each have a quantum well structure including at least one barrier layer composed of In | 09-25-2014 |
20140283903 | Photovoltaic Semiconductor Chip - A photovoltaic semiconductor chip comprising a semiconductor body which comprises a semiconductor layer sequence with an active region provided to generate electrical energy. The active region is formed between a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type different from the first conductivity type. The semiconductor body is disposed on a carrier body. The first semiconductor layer is disposed on the side of the second semiconductor layer facing away from the carrier body. The semiconductor body comprises a recess which extends from the carrier body through the second semiconductor layer. A first connection structure is disposed between the carrier body and the semiconductor body and is connected in an electrically conductive manner in the recess to the first semiconductor layer. | 09-25-2014 |
20140264422 | Optoelectronic Semiconductor Component and Conversion Element - In at least one embodiment, an optoelectronic semiconductor component includes an optoelectronic semiconductor chip. The semiconductor component includes a conversion element that is arranged to convert at least some radiation emitted by the semiconductor chip into radiation of a different wavelength. The conversion element comprises at least one luminescent substance and scattering particles and also at least one matrix material. The scattering particles are embedded in the matrix material. A difference in the refractive index between the matrix material and a material of the scattering particles at a temperature of 300 K is at the most 0.15. The difference in the refractive index between the matrix material and the material of the scattering particles at a temperature of 380 K is greater than at a temperature of 300 K. | 09-18-2014 |
20140264316 | Organic Light-Emitting Device - An organic light-emitting device includes a substrate, on which a transparent electrode and a further electrode are applied. An organic light-emitting layer is arranged between the electrodes. At least one optical scattering layer is arranged on a side of the transparent electrode facing away from the organic light-emitting layer. | 09-18-2014 |
20140264313 | Organic Electronic Component with Dopant, Use of a Dopant and Method for the Production of the Dopant - An organic electronic component includes an organic functional layer having a p-dopant. The p-dopant includes a copper complex having at least one ligand containing an aryloxy group and an iminium group. Additionally specified are the use of a copper complex as a p-dopant and a process for producing a p-dopant. | 09-18-2014 |
20140264311 | LIGHT-EMITTING COMPONENT AND METHOD FOR PRODUCING A LIGHT-EMITTING COMPONENT - A light-emitting component may include: an electrically active region, including a first electrode, a second electrode, an organic functional layer structure between the first electrode and the second electrode, a cover arranged above the electrically active region, and a layer structure arranged between the cover and the electrically active region. The component may have at least one layer having a refractive index which is less than the refractive index of the cover. | 09-18-2014 |
20140252406 | ENCAPSULATION STRUCTURE FOR AN OPTO-ELECTRONIC COMPONENT, AND METHOD FOR ENCAPSULATING AN OPTOELECTRONIC COMPONENT - An encapsulation structure for an optoelectronic component, may include: a thin-film encapsulation for protecting the optoelectronic component against chemical impurities; an adhesive layer formed on the thin-film encapsulation; and a cover layer formed on the adhesive layer and serving for protecting the thin-film encapsulation and/or the optoelectronic component against mechanical damage, wherein the adhesive layer is formed such that particle impurities situated at the surface of the thin-film encapsulation are at least partly enclosed by the adhesive layer. | 09-11-2014 |
20140246692 | PHOSPHOR MIXTURE, OPTOELECTRONIC COMPONENT COMPRISING A PHOSPHOR MIXTURE, AND STREET LAMP COMPRISING A PHOSPHOR MIXTURE - A phosphor mixture includes a first phosphor and a second phosphor, wherein an emission spectrum of the first phosphor has a relative intensity maximum in a yellow spectral range and an emission spectrum of the second phosphor has a relative intensity maximum in a red spectral range, the first phosphor corresponds to the following chemical formula: (Lu | 09-04-2014 |
20140246665 | Encapsulation for an Organic Electronic Device - An organic electronic device and a method of making an organic electronic device are provided. An embodiment of an electronic device includes a substrate, an active layer disposed on the substrate and a thin-layer encapsulation disposed on the active layer. The device further includes a first adhesive layer disposed on the thin-layer encapsulation, wherein the first adhesive layer comprises a getter material and a covering layer disposed on the first adhesive layer. | 09-04-2014 |
20140239253 | Optoelectronic Semiconductor Chip and Method for Producing the Latter - A semiconductor chip with a layer stack includes a first semiconductor layer sequence and a second semiconductor layer sequence. The first semiconductor layer sequence includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type and an active zone arranged therebetween. The second semiconductor layer sequence includes the second semiconductor region of the second conductivity type, a third semiconductor region of the first conductivity type and a second active zone arranged therebetween. | 08-28-2014 |
20140233227 | HOLDER ELEMENT FOR HOLDING AT LEAST ONE FLAT SURFACE-LIGHT LAMP, SET OF A PLURALITY OF LAMPHOLDERS AND A PLURALITY OF ELONGATE HOLDING BODIES AND LUMINAIRE - A holder element for holding at least one flat surface-light lamp includes: an elongate, flat plate body having an upper plate side and a lower plate side arranged opposite the upper plate side, and one or more lampholders, which can be fitted on the plate body, for mechanically holding and making electrical contact with a flat surface-light lamp, wherein an engagement portion is formed on each of the two longitudinal ends of the plate body and is formed by a cutout, which extends, in plan view, from the respective longitudinal end of the plate body over the entire width of the plate body in the direction toward the longitudinal center, such that the plate body can be connected at each of its two longitudinal ends to another, identically formed plate body so as to form a form-fitting connection formed by the engagement portions of the adjacent plate bodies. | 08-21-2014 |
20140231856 | Method for Producing at Least One Radiation-Emitting and/or -Receiving Semiconductor Component, and Semiconductor Component - A method for producing a radiation-emitting or radiation-receiving semiconductor component is specified. In a method step, a carrier body having a mounting surface is provided. In a further method step, a barrier frame is formed on the mounting surface, in such a way that the barrier frame laterally encloses a mounting region of the mounting surface. In a further method step, a radiation-emitting or radiation-receiving semiconductor chip is mounted within the mounting region on the mounting surface. The semiconductor chip is potted with a liquid lens material, wherein the lens material is applied to the mounting surface within the mounting region. The lens material is cured. The mounting surface, the barrier frame and the lens material are adapted to one another. | 08-21-2014 |
20140231855 | METHOD FOR PRODUCING A LIGHT-EMITTING DIODE AND LIGHT-EMITTING DIODE - A method of producing a light-emitting diode includes providing at least one light-emitting diode chip, providing a suspension comprising a solvent and particles of at least one luminescent material, arranging the at least one light-emitting diode chip in the suspension, electrophoretically depositing the particles on an outer face of the at least one light-emitting diode chip, and completing the light-emitting diode. | 08-21-2014 |
20140217460 | Optoelectronic Semiconductor Chip - An optoelectronic semiconductor chip includes a semiconductor layer sequence having at least one active layer. Furthermore, the semiconductor chip has a top-side contact structure on a radiation main side of the semiconductor layer sequence and an underside contact structure on an underside situated opposite to the radiation main side. Furthermore, the semiconductor chip includes at last two trenches that extend from the radiation main side towards the underside. As seen in a plan view of the radiation main side, the top-side contact structure and the underside contact structure are arranged in a manner spaced apart from one another. Likewise as seen in a plan view of the radiation main side, the trenches are located between the top-side contact structure and the underside contact structure. | 08-07-2014 |
20140217454 | LIGHT SOURCE COMPRISING A LUMINESCENT SUBSTANCE AND ASSOCIATED ILLUMINATION UNIT - A light source includes a primary radiation source, which emits radiation in the shortwave range of the optical spectral range, wherein this radiation is converted at least by means of a first luminescent substance entirely or partially into secondary longer-wave radiation in the visible spectral range, wherein the first luminescent substance originates from the class of nitridic modified orthosilicates (NOS), wherein the luminescent substance has as a component M predominantly the group EA=Sr, Ba, Ca, or Mg alone or in combination, wherein the activating dopant D is composed at least of Eu and replaces a proportion of M, and wherein a proportion of SiO2 is introduced in deficiency, so that a modified sub-stoichiometric orthosilicate is provided, wherein the orthosilicate is an orthosilicate stabilized with RE and N, where RE=rare earth metal. | 08-07-2014 |
20140217444 | OPTOELECTRONIC SEMICONDUCTOR COMPONENT AND METHOD FOR THE PRODUCTION THEREOF - An optoelectronic semiconductor device including a carrier substrate and at least one semiconductor chip arranged thereon, wherein the semiconductor chip includes an active layer that generates radiation, conductor tracks electrically contacting the semiconductor chip arranged on the carrier substrate, the semiconductor chip is enclosed in a potting material, and the potting material includes at least a first potting layer, a second potting layer and a third potting layer, which differ from one another in at least one of: their material composition, their optical properties and their chemical properties. | 08-07-2014 |
20140217430 | OPTOELECTRONIC SEMICONDUCTOR UNIT AND MODULE COMPRISING A PLURALITY OF SUCH UNITS - A semiconductor unit ( | 08-07-2014 |
20140217425 | Radiation-Emitting Semiconductor Component - A radiation-emitting semiconductor component includes a semiconductor body. The semiconductor body has a semiconductor layer sequence having an active region provided for generating radiation. The semiconductor component has a waveguide, which is provided for laterally guiding the radiation generated in the active region and which extends between a mirror surface and a coupling-out surface. The waveguide meets the mirror surface perpendicularly and forms an acute angle with a normal to the coupling-out surface. | 08-07-2014 |
20140211821 | Edge-Emitting Semiconductor Laser - An edge emitting semiconductor laser comprising an active, radiation-generating zone ( | 07-31-2014 |
20140210348 | Optoelectronic Semiconductor Chip, Display Comprising a Semiconductor Chip of this Type, and Use of a Semiconductor Chip of this Type or of a Display - An optoelectronic semiconductor chip includes a semiconductor layer sequence having an active layer provided for generating radiation. The semiconductor chip can be operated in a first operating mode and in a second operating mode. The semiconductor layer sequence emits radiation in the first operating mode, while the semiconductor layer sequence emits no radiation in the second operating mode. The semiconductor layer sequence is operated in the forward direction in the first operating mode and in the reverse direction in the second operating mode. A display including a number of semiconductor chips of this type and a use as a motor vehicle headlight are furthermore specified. | 07-31-2014 |
20140210339 | Phosphorescent Metal Complex Compound Radiation Emitting Component Comprising a Phosphorescent Metal Complex Compound and Method for Production of a Phosphorescent Metal Complex Compound - A phosphorescent metal complex is provided, which comprises a metallic central atom M and at least one ligand coordinated by the metallic central atom M, wherein the one metallic central atom M and the ligand form a six-membered metallacyclic ring. Additionally specified are a radiation-emitting component comprising a metal complex, and a process for preparing the metal complex. | 07-31-2014 |
20140210112 | ENCAPSULATION STRUCTURE FOR AN OPTOELECTRONIC COMPONENT AND METHOD FOR ENCAPSULATING AN OPTOELECTRONIC COMPONENT - An encapsulation structure for an optoelectronic component may include: a barrier thin-film layer for protecting an optoelectronic component against chemical impurities; a cover layer applied above the barrier thin-film layer and serving for protecting the barrier thin-film layer against mechanical damage; and an intermediate layer applied on the barrier thin-film layer between barrier thin-film layer and cover layer and including a curable material designed such that when the non-cured intermediate layer is applied to the barrier thin-film layer, particle impurities at the surface of the barrier thin-film layer are enclosed by the intermediate layer and the applied intermediate layer has a substantially planar surface, and that after the intermediate layer has been cured, mechanical loads on the barrier thin-film layer as a result of particle impurities during the application of the cover layer are reduced by the intermediate layer. | 07-31-2014 |
20140203413 | Composite Substrate, Semiconductor Chip Having a Composite Substrate and Method for Producing Composite Substrates and Semiconductor Chips - A composite substrate has a carrier and a utility layer. The utility layer is attached to the carrier by means of a dielectric bonding layer and the carrier contains a radiation conversion material. Other embodiments relate to a semiconductor chip having such a composite substrate, a method for producing a composite substrate and a method for producing a semiconductor chip with a composite substrate. | 07-24-2014 |
20140203253 | Organic Light Emitting Diode, Method for Producing an Organic Light Emitting Diode and Module Comprising at Least Two Organic Light Emitting Diodes - An organic light emitting diode includes a substrate and an organic layer sequence, which generates electromagnetic radiation during operation. The organic layer sequence is arranged in a central region of the substrate A metallization is arranged in an edge region of the substrate and is designed for making electrical contact with the organic layer sequence. A separately produced metallic contact structure is cohesively and electrically conductively connected to the metallization by a joining process based on ultrasonic technology. | 07-24-2014 |
20140197435 | Optoelectronic Semiconductor Chip - An optoelectronic semiconductor chip includes a semiconductor body of semiconductor material, a p-contact layer and an n-contact layer. The semiconductor body includes an active layer intended for generating radiation. The semiconductor body includes a p-side and an n-side, between which the active layer is arranged. The p-contact layer is intended for electrical contacting the p-side. The n-contact layer is intended for electrical contacting the n-side | 07-17-2014 |
20140197429 | METHOD OF ARRANGING A MULTIPLICITY OF LEDS IN PACKAGING UNITS, AND PACKAGING UNIT COMPRISING A MULTIPLICITY OF LEDS - A method of arranging a multiplicity of LEDs in packaging units includes defining a desired range for at least one photometric measurement variable for each of the packaging units; selecting an LED from the multiplicity of LEDs not yet arranged in one of the packaging units; measuring the at least one photometric measurement variable for the selected LED; equipping one of the packaging units containing fewer than N−1 LEDs with the selected LED; storing a measured value and a position of the selected LED in the packaging unit in a memory; repeating until the packaging units are equipped with N−1 LEDs; repeating and calculating the average value of the photometric measurement variable, equipping a packaging unit for which the calculated average value of the variable lies in a defined range with the selected LED; and storing the measured value and the position of the selected LED. | 07-17-2014 |
20140191272 | Optoelectronic Component and Method for Producing an Optoelectronic Component - An optoelectronic component includes a substrate, on which a semiconductor chip and a wettable attractor element are arranged. A medium including pigments at least regionally covers the exposed region of the substrate that is not covered by the semiconductor chip and the attractor element. The medium at least partly wets the semiconductor chip and the attractor element. | 07-10-2014 |
20140191253 | OPTOELECTRONIC DEVICE AND METHOD FOR PRODUCING OPTOELECTRONIC DEVICES - An optoelectronic device includes an optoelectronic component that receives or generates radiation, a frame having a cavity, the optoelectronic component being arranged in said cavity, a connection carrier to which the optoelectronic component is fixed, and a cover covering the cavity and forming a radiation passage area for the radiation, wherein a beam path from the optoelectronic component to the radiation passage area is free of an encapsulation material for the optoelectronic component. | 07-10-2014 |
20140183594 | RADIATION-EMITTING SEMICONDUCTOR CHIP HAVING INTEGRATED ESD PROTECTION - A radiation-emitting semiconductor chip having a semiconductor layer sequence based on a nitride compound semiconductor material and having a pn junction includes a first protective layer having deliberately introduced crystal defects, a second protective layer having a higher doping than the first protective layer, wherein the first protective layer protects the semiconductor chip against electrostatic discharge pulses, an active zone that generates radiation disposed downstream of the first protective layer in a growth direction, wherein during operation of the semiconductor chip, a breakdown behavior of the semiconductor layer sequence in a reverse direction in regions having crystal defects differs from regions without crystal defects, and wherein in the event of electrostatic discharge pulses, electrical charge is dissipated in a homogeneously distributed manner via the regions having crystal defects. | 07-03-2014 |
20140183488 | ORGANIC ELECTROLUMINESCENT COMPONENT - The invention relates to an organic electroluminescent component having a first organic functional stack ( | 07-03-2014 |
20140175500 | OPTOELECTRONIC SEMICONDUCTOR COMPONENT - An optoelectronic semiconductor component includes at least one radiation-emitting semiconductor chip including a radiation-outcoupling face through which at least some of electromagnetic radiation generated in the semiconductor chip leaves the semiconductor chip; and at least one radiation-transmissive body arranged at least in places downstream of the semiconductor chip on its radiation-outcoupling face, which body is in at least indirect contact with the semiconductor chip, wherein the radiation-transmissive body is formed with at least one polymer or contains at least one polymer, and one monomer of the polymer is formed with at least one silazane. | 06-26-2014 |
20140175478 | OPTOELECTRONIC SEMICONDUCTOR COMPONENT AND SCATTERING BODY - An optoelectronic semiconductor component includes one or a plurality of optoelectonic semiconductor chips, and at least one scattering body including a radiation-transmissive matrix material and embedded therein scattering particles composed of a particle material and which is disposed downstream of at least one of the semiconductor chips, wherein, in the event of a temperature change, a difference in refractive index between the matrix material and the particle material changes, and the difference in refractive index between the matrix material and the particle material at a temperature of 300 K is at most 0.15. | 06-26-2014 |
20140175462 | Method for Producing a Plurality of Optoelectronic Semiconductor Components in Combination, Semiconductor Component Produced in Such a Way, and Use of Said Semiconductor Component - A method for producing a plurality of optoelectronic semiconductor components in combination is specified. A plurality of radiation-emitting and radiation-detecting semiconductor chips are applied on a carrier substrate. The semiconductor chips are potted with a respective potting compound. The potting compounds are subsequently severed by sawing between adjacent semiconductor chips. A common frame is subsequently applied to the carrier substrate The common frame has a plurality of chambers open toward the top. The frame is arranged in such a way that a respective semiconductor chip is arranged in a respective chamber of the frame. A semiconductor component produced in such a way and the use of the semiconductor component are furthermore specified. | 06-26-2014 |
20140168988 | OPTICAL ELEMENT, OPTOELECTRONIC COMPONENT AND METHOD FOR THE PRODUCTION THEREOF - An optical element for light outcoupling and/or conversion of light includes a light-emitting semiconductor chip with at least one layer selected from a wavelength conversion layer, a scattering layer, a light outcoupling layer and a lens layer, which each includes a plastics material processable in a compression molding method. | 06-19-2014 |
20140168964 | Lighting Device - A lighting device has a carrier with a mounting face. A number of light-emitting diodes include at least two of the light-emitting diodes suitable for emitting light of different colors during operation. At least one color sensor, during operation, detects the light of at least one of the light-emitting diodes. At least one light-measuring face is illuminated by light of at least one of the light-emitting diodes and reflects and/or scatters at least a portion of this light. The light-emitting diodes and the at least one color sensor are arranged on the mounting surface, the at least one light-measuring face is arranged at a distance from the carrier, and the at least one color sensor; detects for the most part light reflected by the at least one light-measuring face from at least one of the multiplicity of light-emitting diodes. | 06-19-2014 |
20140167303 | PRESSING TOOL AND METHOD FOR PRODUCING A SILICONE ELEMENT - A pressing tool for pressing a silicone element may include: an upper pressing tool half and a lower pressing tool half, which in the closed state of the pressing tool form a cavity for pressing a silicone element, and a carrier foil, which bears on one of the pressing tool halves, for the silicone element to be pressed, wherein at least the upper pressing tool half or the lower pressing tool half has at least one clamping element for aligning the two pressing tool halves with respect to one another, and wherein the clamping element is arranged between the pressing tool halves and outside the region covered by the carrier foil. | 06-19-2014 |
20140167092 | OPTOELECTRONIC ASSEMBLY AND METHOD FOR PRODUCING AN OPTOELECTRONIC ASSEMBLY - An optoelectronic assembly includes a carrier, an optoelectronic component arranged on the carrier, wherein the optoelectronic component includes a substrate and a light-emitting layer arranged on the substrate, and a light-reflecting first encapsulation at least locally covers a region of the carrier surrounding the optoelectronic component and side surfaces of the optoelectronic component. | 06-19-2014 |
20140167019 | LIGHT-EMITTING COMPONENT AND METHOD FOR PRODUCING A LIGHT-EMITTING COMPONENT - A light-emitting component may include: an electrically active region, including: a first electrode; a second electrode; and an organic functional layer structure between the first electrode and the second electrode; and a thermotropic layer, which is arranged outside the electrically active region. | 06-19-2014 |
20140159101 | STRUCTURAL COMPONENT AND METHOD FOR PRODUCING A STRUCTURAL COMPONENT - The invention relates to a structural component which comprises a support ( | 06-12-2014 |
20140159093 | Carrier, Optoelectronic Unit Comprising a Carrier and Methods for the Production of Both - A carrier for an optoelectronic unit has a carrier material which includes polyethylene terephthalate which contains reflector particles and a further filler. Methods for the production of the optoelectronic unit and the carrier are also disclosed. | 06-12-2014 |
20140158875 | OPTOELECTRONIC APPARATUS - An optoelectronic apparatus includes an optical device with an optical structure including a plurality of optical elements and a concentrator which is a hollow body having a reflective inner area, and a radiation-emitting or radiation-receiving semiconductor chip with a contact structure including a plurality of contact elements that make electrical contact with the semiconductor chip and are spaced apart vertically from the optical structure, wherein the contact elements are arranged in interspaces between the optical elements upon projection of the contact structure into a plane of the optical structure, wherein the concentrator has an aperture on a side facing the semiconductor chip that is smaller than a side facing away from the semiconductor chip, and the optical structure is arranged on a side of the concentrator facing the semiconductor chip. | 06-12-2014 |
20140151724 | Method for Producing an Optoelectronic Semiconductor Component and Such a Semiconductor Component - A method for producing a semiconductor component is disclosed. A carrier substrate includes a mounting region and an opening, which is formed in the mounting region of the carrier substrate. After mounting a semiconductor chip, an electrically insulating layer is applied to the carrier substrate in such a way that the electrically insulating layer completely fills the first opening in the carrier substrate. A second opening is formed in the electrically insulating layer. An electrically conductive layer is then applied to the electrically insulating layer in such a way that the second opening is filled with the electrically conductive layer in the form of a via. A semiconductor component produced in this way is also provided. | 06-05-2014 |
20140145610 | LIGHT-EMITTING DIODE ARRANGEMENT HAVING A PIEZO TRANSFORMER - A light-emitting diode arrangement has a frame-shaped piezo transformer having at least one output-side connection, and having a light-emitting diode module that generates electromagnetic radiation, which module is disposed within the frame-shaped piezo transformer and electrically connects to the output-side connection of the piezo transformer by at least one output-side electrical conductor, wherein radiation emitted by the light-emitting diode module in the direction of the piezo transformer is reflected, at the latter. | 05-29-2014 |
20140145391 | COMPONENT CARRIER ASSEMBLY HAVING A TRENCH STRUCTURE WHICH SEPARATES COMPONENT CARRIER REGIONS, AND METHOD FOR PRODUCING A PLURALITY OF COMPONENT CARRIER REGIONS - A component carrier assembly ( | 05-29-2014 |
20140145231 | CONVERSION ELEMENT FOR LIGHT-EMITTING DIODES AND PRODUCTION METHOD - A method of producing a conversion element includes forming a preform from a glass, reshaping the preform into a structured glass fiber using a structuring element, and dividing the glass fiber into conversion elements. | 05-29-2014 |
20140145228 | OPTOELECTRONIC SEMICONDUCTOR CHIP, METHOD OF FABRICATION AND APPLICATION IN AN OPTOELECTRONIC COMPONENT - An optoelectronic semiconductor chip includes an active layer with a first and a second major face, including a semiconductor material which emits or receives radiation when the semiconductor chip is in operation; a patterned layer including three-dimensional patterns for outcoupling or incoupling radiation and arranged on the first major face in a beam path of the radiation, wherein the patterned layer includes an inorganic-organic hybrid material. | 05-29-2014 |
20140145227 | LIGHT-EMITTING DIODE CHIP - A light-emitting diode chip includes a semiconductor body including a radiation-generating active region, at least two contact locations electrically contacting the active region, a carrier and a connecting medium arranged between the carrier and the semiconductor body, wherein the semiconductor body includes roughening on outer surfaces facing the carrier, the semiconductor body mechanically connects to the carrier by the connecting medium, the connecting medium locally directly contacts the semiconductor body and the carrier, and the at least two contact locations are arranged on the upper side of the semiconductor body facing away from the carrier. | 05-29-2014 |
20140145226 | POLYMER COMPOSITE, USE OF THE POLYMER COMPOSITE AND OPTOELECTRONIC COMPONENT CONTAINING THE POLYMER COMPOSITE - A polymer composite includes a polymer matrix and ZnO particles distributed in the polymer matrix, wherein the polymer composite is a barrier for compounds containing sulfur. | 05-29-2014 |
20140141549 | Method for Producing an Electronic Component and Electronic Component - A method for producing an electronic component comprising barrier layers for the encapsulation of the component comprises, in particular, the following steps: providing a substrate with at least one functional layer, applying at least one first barrier layer on the functional layer via plasma enhanced atomic layer deposition (PEALD), and applying at least one second barrier layer on the functional layer by means of plasma-enhanced chemical vapor deposition (PECVD), where the at least one first barrier layer is applied at a temperature of less than 100° C. | 05-22-2014 |
20140139136 | LIGHTING DEVICE AND CONTROL DEVICE FOR CONTROLLING A PLURALITY OF LIGHT-EMITTING DIODES IN AN OPEN-LOOP AND/OR CLOSED-LOOP MANNER - The invention relates to a lighting device having at least one light-emitting diode module ( | 05-22-2014 |
20140138730 | Method of Producing a Plurality of Optoelectronic Semiconductor Chips - A method of producing a plurality of optoelectronic semiconductor chips is provided. At least one trench is incorporated into the semiconductor body by means of at least one structuring process. The trench breaks through the active zone in a vertical direction. At least one cleaning process is performed at least on exposed locations of the semiconductor body in the region of the trench. The cleaning process includes at least one plasma cleaning process, and the plasma cleaning process at least reduces a number and/or a spatial expansion of structuring residues at exposed locations of the semiconductor body at least in the region of the trench. At least one passivation layer is applied at least to exposed locations of the semiconductor body in the region of the trench. | 05-22-2014 |
20140138703 | Optoelectronic Semiconductor Body and Method for Producing an Optoelectronic Semiconductor Body - An optoelectronic semiconductor body has a substrate that includes a strained layer that is applied to the substrate in a first epitaxy step. The strained layer includes at least one recess formed vertically in the strained layer. In a second epitaxy step, a further layer applied to the strained layer. The further layer fills the at least one recess and covers the strained layer at least in some areas. | 05-22-2014 |
20140138662 | LIGHT-EMITTING COMPONENTS AND METHOD FOR PRODUCING A LIGHT-EMITTING COMPONENT - A light-emitting component may include: a first electrode; an organic electroluminescent layer structure on or over the first electrode; a second translucent electrode on or over the organic electroluminescent layer structure; and a mirror layer structure on or over the second electrode, wherein the mirror layer structure has a lateral thermal conductance of at least 1*10 | 05-22-2014 |
20140133505 | Edge-Emitting Semiconductor Laser - An edge-emitting semiconductor laser includes a first waveguide layer, into which an active layer that generates laser radiation is embedded. The laser also includes a second waveguide layer, into which no active layer is embedded. The laser radiation generated in the active layer forms a standing wave, which has respective intensity maxima in the first waveguide layer and corresponding intensity minima in the second waveguide layer and respective intensity minima in the first waveguide layer and corresponding intensity maxima in the second waveguide layer at periodic intervals in a beam direction of the semiconductor laser. An at least regionally periodic contact structure is arranged at a surface of the edge-emitting semiconductor laser. A period length of the contact structure is equal to a period length of the standing wave, such that the semiconductor laser has an emission wavelength that is set by the period length of the contact structure. | 05-15-2014 |
20140131754 | Semiconductor Chip that Emits Polarized Radiation - A semiconductor chip that emits radiation includes a semiconductor body having an active zone, which emits unpolarized radiation having a first radiation component of a first polarization and having a second radiation component of a second polarization. A lattice structure acts as a waveplate or polarization filter and causes an increase in one radiation component relative to the other radiation component in the radiation emitted by the semiconductor chip through an output side. Therefore, the semiconductor chip emits polarized radiation, which has the polarization of the amplified radiation component. The attenuated radiation component remains in the semiconductor chip an optical structure, which converts the polarization of at least part of the attenuated radiation component remaining in the semiconductor chip to the polarization of the amplified radiation component, and a reflective rear side opposite the output side. | 05-15-2014 |
20140131739 | METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR COMPONENT - A method of producing a component including providing a carrier having a top, an underside, and at least one connection area, applying an optoelectronic component to the top, wherein the optoelectronic component has a contact area facing away from the carrier, applying insulating material to the contact and connection areas, wherein the insulating material is free of foreign particles, applying an insulating layer to exposed places of the insulating material, optoelectronic component and carrier, wherein the insulating layer includes foreign particles in a predefinable concentration, removing the insulating layer in a region above the contact and/or connection areas, to produce openings, removing the insulating material in a region above the contact and connection areas, thereby producing at least two openings in the insulating material, and arranging conductive material on the insulating layer and at least in places in the openings, wherein conductive material conductively connects the contact and connection areas. | 05-15-2014 |
20140126204 | RADIATION-EMITTING APPARATUS AND USE OF AN APPARATUS OF THIS KIND - The invention specifies a radiation-emitting apparatus ( | 05-08-2014 |
20140117569 | DEVICE COMPRISING AN ENCAPSULATION UNIT - A device that includes a component and an encapsulation arrangement for the encapsulation of the component with respect to moisture and/or oxygen, wherein the encapsulation arrangement has a first layer and thereabove a second layer on at least one surface of the component, the first layer and the second layer each comprise an inorganic material, and the second layer is arranged directly on the first layer. | 05-01-2014 |
20140117396 | OPTOELECTRONIC SEMICONDUCTOR CHIP, OPTOELECTRONIC SEMICONDUCTOR COMPONENT, AND A METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR COMPONENT - An optoelectronic semiconductor chip includes a semiconductor body that emits primary light, and a luminescence conversion element that emits secondary light by wavelength conversion of at least part of the primary light, wherein the luminescence conversion element has a first lamina fixed to a first partial region of an outer surface of the semiconductor body, the outer surface emitting primary light, and leaves free a second partial region of the outer surface, the luminescence conversion element has a second lamina fixed to a surface of the first lamina facing away from the semiconductor body and spaced apart from the semiconductor body, the first lamina is at least partly transmissive to the primary radiation, a section of the second lamina covers at least the second partial region, and at least the section of the second lamina is designed to be absorbent and/or reflective and/or scattering for the primary radiation. | 05-01-2014 |
20140110865 | OPTOELECTRONIC DEVICE AND METHOD FOR THE PRODUCTION THEREOF - An optoelectronic component includes a first substrate on which are arranged an active region and a first contact region, and a first contact layer arranged in the first contact region. The second component includes a second substrate on which is arranged at least one second contact layer arranged in a second contact region. The first contact layer connects electrically conductively with the active region and additionally is bonded to the second contact layer by an adhesive layer. The adhesive layer includes an electrically conductive adhesive. The first contact layer and/or the second contact layer are patterned at least in part. | 04-24-2014 |
20140103377 | OPTOELECTRONIC COMPONENT AND METHOD FOR ITS MANUFACTURING - An optoelectronic component, including a housing including a thermosetting plastic including at least one material selected from the group consisting of aminoplastic thermosetting plastic, urea thermosetting plastic, melamine-formaldehyde thermosetting plastic, wet polyester thermosetting plastics, bulk molding compounds, polyester resin, phenolic resin and vinyl ester resin, a recess in the housing, and a radiation-emitting component, arranged in the recess, wherein the optoelectronic component includes a gate mark. | 04-17-2014 |
20140098556 | Optoelectronic Semiconductor Module and Display Having a Plurality of Such Modules - An optoelectronic semiconductor module includes a plurality of light-emitting areas, which emit light when in operation. At least two abutting lateral edges of at least one light-emitting area are arranged at an angle of more than 0 degrees and less than 90 degrees to each other. Further embodiments relate to a display having a plurality of such modules. | 04-10-2014 |
20140092931 | Laser Diode Assembly - A laser diode assembly includes a housing having a housing part and a mounting part that is connected to the housing part and that extends away from the housing part along an extension direction. A laser diode chip is disposed on the mounting part. The laser diode chip has, on a substrate, semiconductor layers with an active layer for emitting light. The housing part and the mounting part have a main body composed of copper and at least the housing part is steel-sheathed. A first solder layer having a thickness of greater than or equal to 3 μm is arranged between the laser diode chip and the mounting part. | 04-03-2014 |
20140085169 | Display Device - A display device includes a multiplicity of pixels, at least one connection carrier, and a multiplicity of inorganic light-emitting diode chips. The connection carrier includes a multiplicity of switches. Each pixel contains at least one light-emitting diode chip. Each light-emitting diode chip is mechanically fixed and electrically connected to the connection carrier. Each switch is designed for driving at least one light-emitting diode chip and the light-emitting diode chips are imaging elements of the display device. | 03-27-2014 |
20140084307 | OPTOELECTRONIC DEVICE - An optoelectronic device having an optoelectronic component that receives or generates radiation and has a main radiation passage surface, wherein the component is assigned an aperture which defines a radiation cone for radiation passing through the main radiation passage surface, and the aperture has an inner surface having a region inclined away from the main radiation passage surface. | 03-27-2014 |
20140080287 | METHOD FOR SINGULATING A COMPONENT COMPOSITE ASSEMBLY - A method relates to separating a component composite into a plurality of component regions, wherein the component composite is provided having a semiconductor layer sequence comprising a region for generating or for receiving electromagnetic radiation. The component composite is mounted on a rigid subcarrier. The component composite is separated into the plurality of component regions, wherein one semiconductor body is produced from the semiconductor layer sequence for each component region. The component regions are removed from the subcarrier. | 03-20-2014 |
20140080286 | METHOD FOR PRODUCING A SEMICONDUCTOR BODY - A method of producing a semiconductor body includes providing a semiconductor wafer having at least two chip regions and at least one separating region arranged between the chip regions, wherein the semiconductor wafer includes a layer sequence, an outermost layer of which has, at least within the separating region a transmissive layer transmissive to electromagnetic radiation, carrying out at least one of: removing the transmissive layer within the separating region, applying an absorbent layer within the separating region, increasing the absorption coefficient of the transmissive layer within the separating region, and separating the chip regions along the separating regions by a laser. | 03-20-2014 |
20140078752 | LAMP HOUSING, LUMINAIRE ELEMENT AND LUMINAIRE - A luminaire includes a luminaire housing element for holding a lamp housing, and a lamp housing for accommodating a flat lamp, wherein the lamp housing has a laterally projecting connecting element, and wherein the luminaire housing element has a recess in which the connecting element engages in a form-fitting manner and is fixed when the mechanical connection has been produced. | 03-20-2014 |
20140077201 | OPTOELECTRONIC COMPONENT AND METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT - An optoelectronic component may include: at least one layer of the optoelectronic component; at least one adhesive on the layer of the optoelectronic component; and a cover on the at least one adhesive; wherein the at least one adhesive is cured only in a partial region above at least one of a substrate and the layer. | 03-20-2014 |
20140077070 | UNIT FOR DETERMINING THE TYPE OF A DOMINATING LIGHT SOURCE BY MEANS OF TWO PHOTODIODES - The invention relates to a unit ( | 03-20-2014 |
20140070246 | LIGHT-EMITTING SEMICONDUCTOR COMPONENT - The invention relates to a light-emitting semiconductor component, comprising—a first semiconductor body ( | 03-13-2014 |
20140064311 | Laser Light Source - A laser light source having a ridge waveguide structure includes a semi-conductor layer sequence having a number of functional layers and an active region that is suitable for generating laser light during operation At least one of the functional layers is designed as a ridge of the ridge waveguide structure The semiconductor layer sequence has a mode filter structure that is formed as part of the ridge and/or along a main extension plane of the functional layers next to the ridge and/or perpendicular to the main extension plane of the functional layers below the ridge. | 03-06-2014 |
20140061703 | OPTOELECTRONIC SEMICONDUCTOR CHIP - An optoelectronic semiconductor chip includes a carrier including a carrier element having a mounting side; one electrically conductive n-type wiring layer arranged at the mounting side; a structured, electrically conductive contact layer having a p-side and n-side contact region and arranged at a side of the n-type wiring layer facing away from the carrier element; at least one insulation region electrically insulating the p-side contact region from the n-side contact region; at least one electrically insulating spacer layer arranged at a side of the n-type wiring layer facing away from the carrier element in a vertical direction between the p-side contact region and the n-type wiring layer, wherein the n-side contact region and the n-type wiring layer electrically conductively connect to one another, and the p-side contact region and the spacer layer border the n-side contact region in a lateral direction; an optoelectronic structure connected to the carrier. | 03-06-2014 |
20140061702 | Optoelectronic Semiconductor Chip - An optoelectronic semiconductor chip includes a semiconductor layer sequence and a carrier substrate. A first and a second electrical contact layer are arranged at least regionally between the carrier substrate and the semiconductor layer sequence and are electrically insulated from each other by an electrically insulating layer. A minor layer is arranged between the semiconductor layer sequence and the carrier substrate. The semiconductor chip comprises a transparent encapsulation layer covering side surfaces of the semiconductor layer sequence, side surfaces of the minor layer and side surfaces of the electrically insulating layer facing towards the side surfaces of the semiconductor chip. | 03-06-2014 |
20140061694 | Method for Producing a Thin-Film Semiconductor Body and Thin-Film Semiconductor Body - A method for producing a thin-film semiconductor body is provided. A growth substrate is provided. A semiconductor layer with funnel-shaped and/or inverted pyramid-shaped recesses is epitaxially grown onto the growth substrate. The recesses are filled with a semiconductor material in such a way that pyramid-shaped outcoupling structures arise. A semiconductor layer sequence with an active layer is applied on the outcoupled structures. The active layer is suitable for generating electromagnetic radiation. A carrier is applied onto the semiconductor layer sequence. At least the semiconductor layer with the funnel-shaped and/or inverted pyramid-shaped recesses is detached, such that the pyramid-shaped outcoupling structures are configured as projections on a radiation exit face of the thin-film semiconductor body. | 03-06-2014 |
20140061676 | METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT AND COMPONENT PRODUCED IN SUCH MANNER - A method of producing an optoelectronic component includes providing a semiconductor chip having an active layer that generates radiation and is arranged on a carrier, applying a dispersed material including a matrix material and particles embedded therein to the semiconductor chip and/or the carrier at least in regions, wherein before the dispersed material is applied, at least one chip edge of the semiconductor chip facing away from the carrier is modified such that the dispersed material at least partly separates into its constituents during application at the chip edge. | 03-06-2014 |
20140061667 | SEMICONDUCTOR CHIP, DISPLAY COMPRISING A PLURALITY OF SEMICONDUCTOR CHIPS AND METHODS FOR THE PRODUCTION THEREOF - An optoelectronic semiconductor chip including a semiconductor body of semiconductor material, an outcoupling face arranged downstream of the semiconductor body in an emission direction and a mirror layer, wherein the semiconductor body includes an active layer that generates radiation, the mirror layer is arranged on the side of the semiconductor body remote from the outcoupling face, and a gap between the active layer and the mirror layer is set such that radiation emitted by the active layer towards the outcoupling face interferes with radiation reflected at the mirror layer such that the semiconductor chip features an emitted radiation pattern with a selected direction in the forward direction. | 03-06-2014 |
20140057417 | Method for Producing an Optoelectronic Semiconductor Chip - A method for producing an optoelectronic semiconductor chip is disclosed. A growth substrate is provided in an epitaxy installation. At least one intermediate layer is deposited by epitaxy on the growth substrate. A structured surface that faces away from the growth substrate is produced on the side of the intermediate layer facing away from the growth substrate. An active layer is deposited by epitaxy on the structured surface. The structured surface is produced in the epitaxy installation and the active layer follows the structuring of the structured surface at least in some regions in a conformal manner or at least in some sections essentially in a conformal manner. | 02-27-2014 |
20140054635 | CARRIER FOR AN OPTOELECTRONIC STRUCTURE AND OPTOELECTRONIC SEMICONDUCTOR CHIP COMPRISING SUCH A CARRIER - A carrier ( | 02-27-2014 |
20140051194 | METHOD OF PRODUCING AT LEAST ONE OPTOELECTRONIC SEMICONDUCTOR CHIP - A method of producing at least one optoelectronic semiconductor chip includes providing at least one optoelectronic structure, including a growth support and a semiconductor layer sequence with an active region, the semiconductor layer sequence being deposited epitaxially on the growth support, providing a carrier, applying the at least one optoelectronic structure onto the carrier with its side remote from the growth support, coating the at least one optoelectronic structure with a protective material, the protective material covering the outer face, remote from the carrier, of the growth support and side faces of the growth support and of the semiconductor layer sequence, and detaching the growth support from the semiconductor layer sequence of the at least one optoelectronic structure. | 02-20-2014 |
20140049943 | LIGHTING DEVICE - The invention relates to a lighting device ( | 02-20-2014 |
20140048785 | OPTOELECTRONIC COMPONENT AND USE OF A COPPER COMPLEX AS DOPANT FOR DOPING A LAYER - An optoelectronic component includes: a wet-chemically processed hole injection layer; and an additional layer doped with a dopant and adjacent to the wet-chemically processed hole injection layer, the dopant comprising a copper complex having at least one ligand with the chemical structure according to formula I in which E1 and E2 are each independently one of the following elements: sulfur, oxygen or selenium, and R is selected from the group of: hydrogen or substituted or unsubstituted, branched, linear or cyclic hydrocarbons. | 02-20-2014 |
20140048680 | OPTOELECTRONIC COMPONENT AND METHOD FOR OPERATING AN OPTOELECTRONIC COMPONENT - An optoelectronic component includes a carrier on which at least one first light-emitting semiconductor chip and one first light-absorbing semiconductor chip connected antiparallel to the at least one first light-emitting semiconductor chip, at least one second light-emitting semiconductor chip and one second light-absorbing semiconductor chip connected antiparallel to the at least one second light-emitting semiconductor chip, wherein the semiconductor chips are arranged on the carrier such that light from each light-emitting semiconductor chip falls on at least one of the light-absorbing semiconductor chips not connected to the respective light-emitting semiconductor chip, and the light-absorbing semiconductor chips are formed as protection diodes. | 02-20-2014 |
20140042466 | Method for Producing at Least One Optoelectronic Semiconductor Component - A method can be used to provide at least one optoelectronic semiconductor component, A carrier includes a first surface and a second surface opposite the first surface. At least one optoelectronic semiconductor chip is arranged on the first surface of the carrier. The optoelectronic semiconductor chip is formed with at least one n-side region and at least one p-side region, and is applied with the n-side region or the p-side region to the first surface. An electrically insulating enclosure is arranged on exposed points of the outer faces of the semiconductor chip and of the first surface of the carrier. The electrically insulating enclosure is partially removed. After removal at least one major face, remote from the carrier, of the optoelectronic semiconductor chip is free of the electrically insulating enclosure at least in places. | 02-13-2014 |
20140034983 | Method for Manufacturing at Least One Optoelectronic Semiconductor Device - A method for manufacturing at least one optoelectronic semiconductor device includes providing a substrate and applying a number of optoelectronic semiconductor chips, which are arranged spaced apart from one another in a lateral direction, on an upper face of the substrate. At least one reflective coating is applied to the exposed areas of the substrate and the lateral surfaces of the optoelectronic semiconductor chips. Openings are introduced into the reflective coating, which completely penetrate the reflective coating. Electrically conductive material is arranged on the reflective coating and at least on some parts of the openings. Radiation penetration surfaces of the optoelectronic semiconductor chips are free of the reflective coating and the reflective coating does not laterally extend beyond the optoelectronic semiconductor chips. | 02-06-2014 |
20140030829 | Optoelectronic Module Having a Carrier Substrate and a Plurality of Radiation-Emitting Semiconductor Components and Method for the Production Thereof - An optoelectronic module is described including a carrier substrate and a plurality of radiation-emitting semiconductor components. The carrier substrate includes structured conductor tracks. The semiconductor components each include an active layer for generating electromagnetic radiation, a first contact area and a second contact area. The first contact area is in each case arranged on that side of the semiconductor components that is remote from the carrier substrate. The semiconductor components are provided with an electrically insulating layer having a cutout in a region of the first contact area. Conductive structures are arranged in regions on the insulating layer. One of the conductive structures electrically conductively connects at least the first contact area of a semiconductor component to a further first contact area of a further semiconductor component or to a conductor track of the carrier substrate. A method for producing such a module is also described. | 01-30-2014 |
20140027921 | Connection Carrier for Semiconductor Chips and Semiconductor Component - A connection carrier for at least one semiconductor chip is disclosed. The connection carrier has a carrier body having a main surface. A first connection area and a second connection area at a distance from the first connection area are formed on the main surface. The connection carrier has a mechanical decoupling device which is intended to reduce transmission of mechanical forces from the carrier body to at least one region of the first connection area. A semiconductor component having such a connection carrier is also stated. | 01-30-2014 |
20140027805 | Optoelectronic Semiconductor Chip and Method for Producing an Optoelectronic Semiconductor Chip - An optoelectronic semiconductor chip has an epitaxial layer sequence. A doped epitaxial layer of the epitaxial layer sequence has a first region and a second region and a protected structure. The first region of the doped epitaxial layer completely covers the protected structure. The outer surface of the doped epitaxial layer has a first roughness in the first region and a second roughness in the second region. | 01-30-2014 |
20140021507 | Optoelectronic Semiconductor Chip and Method for Producing Optoelectronic Semiconductor Chips - An optoelectronic semiconductor chip has a semiconductor body and a substrate on which the semiconductor body is disposed. The semiconductor body has an active region disposed between a first semiconductor layer of a first conductor type and a second semiconductor layer of a second conductor type. The first semiconductor layer is disposed on the side of the active region facing the substrate. The first semiconductor layer is electrically conductively connected to a first termination layer that is disposed between the substrate and the semiconductor body. An encapsulation layer is disposed between the first termination layer and the substrate and, in plan view of the semiconductor chip, projects at least in some regions over a side face which delimits the semiconductor body. | 01-23-2014 |
20140014995 | OPTOELECTRONIC COMPONENT AND METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT - An optoelectronic component includes a substrate, a semiconductor chip arranged on the substrate, and a light-transmissive cover, wherein the light-transmissive cover covers at least an area of the semiconductor chip facing away from the substrate, the light-transmissive cover has a hardness greater than that of silicone, and a connecting material is arranged as a potting material between the light-transmissive cover and the substrate such that those areas of the semiconductor chip not covered by the substrate are surrounded by the connecting material, and the connecting material forms a cavity seal. | 01-16-2014 |
20140014989 | Optoelectronic Semiconductor Chip and a Method for the Production Thereof - An optoelectronic semiconductor chip includes a semiconductor layer stack and a mirror. The semiconductor layer stack has an active layer for generating electromagnetic radiation. The mirror is arranged on an underside of the semiconductor layer stack. The mirror has a first region and a second region, the first region containing silver and the second region containing gold. A method of producing such a semiconductor chip is also defined. | 01-16-2014 |
20140014984 | LIGHTING MODULE FOR EMITTING MIXED LIGHT - A lighting module for emitting mixed light comprises at least one first semiconductor element which emits unconverted red light, at least one second semiconductor element which emits converted greenish white light having a first conversion percentage, at least one third semiconductor element which emits greenish white light having a second conversion percentage that is smaller than the first conversion percentage, and at least one resistor element having a temperature-dependent electric resistance, the second semiconductor element being connected in parallel to the third semiconductor element. | 01-16-2014 |
20140014977 | OPTOELECTRONIC SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR DEVICE - An optoelectronic semiconductor device includes an optoelectronic semiconductor layer sequence on a metal carrier element, which includes as a first component silver and as a second component a material having a lower coefficient of thermal expansion than silver, wherein the first and second components are intermixed in the metal carrier element. | 01-16-2014 |
20140014931 | RADIATION-EMITTING ORGANIC-ELECTRONIC DEVICE AND METHOD FOR THE PRODUCTION THEREOF - A process of producing a radiation-emitting organic-electronic device having a first and a second electrode layer and an emitter layer includes: A) providing a phosphorescent emitter with an anisotropic molecule structure and a matrix material, B) applying the first electrode layer to a substrate, C) applying the emitter layer under thermodynamic control, with vaporization of the phosphorescent emitter and of the matrix material under reduced pressure and deposition thereof on the first electrode layer such that molecules of the phosphorescent emitter are in anisotropic alignment, and D) applying the second electrode layer on the emitter layer. | 01-16-2014 |
20140008623 | Optoelectronic Component and Use of a Copper Complex in a Charge Generation Layer Sequence - Different embodiments of the optoelectronic component have an organic layer structure for isolating charge carriers of a first charge carrier type and charge carriers of a second charge carrier type. The organic layer structure comprises a copper complex which has at least one ligand with the chemical structure as per a formula (I). In this formula, E1 and E2 are each one of the following elements independently of one another: oxygen, sulphur or selenium. R is chosen from the group comprising: hydrogen or substituted or unsubstituted, branched, linear or cyclic hydrocarbons. | 01-09-2014 |
20140001507 | Optical Element and Radiation-Emitting Device Comprising Such an Optical Element | 01-02-2014 |
20140001503 | Conversion Component | 01-02-2014 |
20130343419 | Laser Diode Assembly - A laser diode assembly includes a housing having a housing part and a mounting part, which is connected to the housing part and which extends away from the housing part along an extension direction. A laser diode chip is disposed on the mounting part. The laser diode chip has, on a substrate, semiconductor layers with an active layer for emitting light. The housing part and the mounting part have a main body composed of copper and at least the housing part is steel-sheathed. A first solder layer having a thickness of greater than or equal to 2 μm is arranged between the laser diode chip and the mounting part. The laser diode chip has a radiation coupling-out area, on which a crystalline protective layer is applied. | 12-26-2013 |
20130341655 | METHOD FOR PRODUCING AN ELECTRICAL TERMINAL SUPPORT - The invention relates to a method for producing an electrical terminal support for an optoelectronic semiconductor body, comprising the following steps: providing a carrier assembly ( | 12-26-2013 |
20130337593 | METHOD FOR PRODUCING A PLURALITY OF SEMICONDUCTOR COMPONENTS - A method for producing a plurality of radiation-emitting semiconductor components ( | 12-19-2013 |
20130334558 | METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT, AND OPTOELECTRONIC COMPONENT - A method of producing an optoelectronic component includes providing a cavity; introducing a liquid matrix material with phosphor particles distributed therein into the cavity; introducing a semiconductor chip into the matrix material; sedimenting the phosphor particles in the matrix material; and curing the matrix material, wherein a conversion layer including phosphor particles is produced, said conversion layer being arranged on the semiconductor chip. | 12-19-2013 |
20130334544 | OPTOELECTRONIC SEMICONDUCTOR COMPONENT, METHOD FOR PRODUCING SAME AND USE OF SUCH A COMPONENT - An opto-electronic component includes a housing, a radiation-emitting semiconductor chip and a radiation-detecting semiconductor chip. A first cavity and a second cavity are formed in the housing, wherein the radiation-emitting semiconductor chip is arranged in the first cavity and is cast by means of a first casting compound. The radiation-detecting semiconductor chip is arranged in the second cavity and cast by means of a second casting compound, wherein absorber particles are embedded in the second casting compound which are suitable for at least partially absorbing the radiation emitted by the radiation-emitting semiconductor chip. | 12-19-2013 |
20130334519 | Organic Light-Emitting Component and Use of a Copper Complex in a Charge Transport Layer - An organic light-emitting component has an active layer for emitting electromagnetic radiation. It also has an anode and an organic charge transport layer, arranged between the active layer and the anode, for transporting charge carriers from the anode to the active layer. The anode can be used to decouple electromagnetic radiation emitted by the active layer from the organic light-emitting component. The organic charge transport layer comprises a copper complex which has at least one ligand with the chemical structure as per a formula I. | 12-19-2013 |
20130328101 | METHOD OF PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR CHIP, AND SUCH A SEMICONDUCTOR CHIP - A method of producing an optoelectronic semiconductor chip having a semiconductor layer stack based on a material system AlInGaP includes preparing a growth substrate having a silicon surface, arranging a compressively relaxed buffer layer stack on the growth substrate, and metamorphically, epitaxially growing the semiconductor layer stack on the buffer layer stack, the semiconductor layer stack having an active layer that generates radiation. | 12-12-2013 |
20130328066 | OPTOELECTRONIC SEMICONDUCTOR CHIP AND METHOD FOR THE PRODUCTION THEREOF - An optoelectronic semiconductor chip includes a semiconductor layer stack having an active layer that generates radiation, and a radiation emission side, and a conversion layer disposed on the radiation emission side of the semiconductor layer stack, wherein the conversion layer converts at least a portion of the radiation, which is emitted by the active layer, into radiation of a different wavelength, the radiation emission side of the semiconductor layer stack has a first nanostructuring, and the conversion layer is disposed in this first nanostructuring. | 12-12-2013 |
20130320385 | Method for Producing a Radiation Conversion Element, Radiation Conversion Element and Optoelectronic Component Containing a Radiation Conversion Element - A method for producing a radiation conversion element is provided, in which a solution is applied to a substrate, a gel is formed from the solution and the gel is thermally treated. A radiation conversion element is also provided which is produced according to the method. An optoelectronic component is also provided which contains a radiation conversion element. | 12-05-2013 |
20130320384 | CERAMIC CONVERSION ELEMENT, SEMICONDUCTOR CHIP COMPRISING A CERAMIC CONVERSION ELEMENT AND METHOD FOR PRODUCING A CERAMIC CONVERSION ELEMENT - A ceramic conversion element includes an active ceramic layer that converts electromagnetic radiation in a first wavelength range into electromagnetic radiation in a second wavelength range, which is different from the first wavelength range, and a carrier layer transmissive to radiation in the first wavelength range and/or radiation in the second wavelength range, wherein an inhibitor layer is arranged between the active layer and the carrier layer, the inhibitor layer reducing diffusion of activator ions from the active layer into the carrier layer. | 12-05-2013 |
20130320369 | OPTOELECTRONIC SEMICONDUCTOR DEVICE - An optoelectronic semiconductor device includes a first light source that emits green, white or white-green light and includes a semiconductor chip that emits in the blue spectral range, and a first conversion element attached directly to the semiconductor chip, a second light source that emits red light, having a semiconductor chip, that emits in a blue spectral range, and having a second conversion element attached directly to the semiconductor chip, and/or having a semiconductor chip that emits in a red spectral range, a third light source that emits blue light and has a semiconductor chip emitting in the blue spectral range, and a filler body having a matrix material into which a conversion agent is embedded, wherein the filler body is disposed downstream of the light sources collectively. | 12-05-2013 |
20130313604 | Method for Producing a Light-Emitting Semiconductor Component and Light-Emitting Semiconductor Component - A method for producing a light-emitting semiconductor component is specified. A light-emitting semiconductor chip is arranged on a mounting area of a carrier. The semiconductor chip is electrically connected to electrical contact regions on the mounting area. An encapsulation layer is applied to the semiconductor chip by means of atomic layer deposition. All surfaces of the semiconductor chip which are free after mounting and electrical connection are covered with an encapsulation layer. Furthermore, a light-emitting semiconductor component is specified. | 11-28-2013 |
20130313584 | LED illumination device having a first LED chip and a second LED chip, and a method for the production thereof - An LED illumination device ( | 11-28-2013 |
20130313540 | METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT AND OPTOELECTRONIC COMPONENT - A method for producing an optoelectronic component includes: providing a substrate, applying a solution to a main side of the substrate, applying a standing ultrasonic field to the substrate and to the solution, curing and drying the solution to form a layer having a wavy top side facing away from the substrate, and applying a layer stack on the top side of the wavy layer, said layer stack being designed to generate light during the operation of the finished component. | 11-28-2013 |
20130309788 | Leadframe for Optoelectronic Components and Method for Producing Optoelectronic Components - A leadframe for producing a number of optoelectronic components is specified. At least one mounting region includes a number of chip mounting areas for a number of semiconductor chips. Alongside the mounting region at at least one main area of the leadframe one or more of grooves for reducing mechanical stresses in the leadframe are formed. The groove(s) do not completely penetrate through the leadframe. A method for producing a number of optoelectronic components on a leadframe of this type is furthermore specified. | 11-21-2013 |
20130307015 | Optoelectronic Semiconductor Device - An optoelectronic semiconductor device has a carrier foil that includes a first surface and a second surface opposite the first surface. At least one electrically conductive contact layer is arranged on the first surface and covers the first surface in places and contains at least one metal. At least one radiation-emitting optoelectronic semiconductor component is arranged on an outer face, remote from the carrier foil, of the electrically conductive contact layer. The radiation-emitting, optoelectronic semiconductor component is electrically conductively connected to the at least one electrically conductive contact layer. The carrier foil is formed with at least one polymer or contains at least one polymer. At least one monomer of the polymer is formed with at least one C-F bond, with C denoting carbon and F fluorine. | 11-21-2013 |
20130307004 | OPTOELECTRONIC COMPONENT AND METHOD FOR PRODUCING IT - An optoelectronic component includes a carrier having a first connection region and a second connection region, a radiation-emitting semiconductor chip having a base surface and a radiation exit surface opposite the base surface, wherein the semiconductor chip is arranged by the base surface on the carrier, a housing having a lower housing part arranged on the carrier and adjoining side flanks of the semiconductor chip, and an upper housing part arranged on the lower housing part and shaped as a reflector for radiation emitted by the semiconductor chip, and an electrical connection layer which leads from the radiation exit surface of the semiconductor chip via a part of the interface between the lower and the upper housing part and through the lower housing part to the first connection region on the carrier. | 11-21-2013 |
20130299867 | LIGHT-EMITTING DIODE CHIP - A light-emitting diode chip includes at least two semiconductor bodies, each semiconductor body including at least one active area that generates radiation, a carrier having a top side and an underside facing away from the top side, and an electrically insulating connector arranged at the top side of the carrier, wherein the electrically insulating connector is arranged between the semiconductor bodies and the top side of the carrier, the electrically insulating connector imparts a mechanical contact between the semiconductor bodies and the carrier, and at least some of the semiconductor bodies electrically connect in series with one another. | 11-14-2013 |