NICHIA CORPORATION Patent applications |
Patent application number | Title | Published |
20160141475 | COMPOSITE SUBSTRATE, LIGHT EMITTING DEVICE, AND METHOD OF MANUFACTURING THE LIGHT EMITTING DEVICE - A composite substrate includes a plate-like lead frame having a plurality of supporting leads and a plurality of element containers supported by the supporting leads. The plurality of element containers each has a first electrode lead, a second electrode lead, and a resin molded body integrated with the first electrode lead and the second electrode lead, and within the resin molded body, the first electrode lead, the second electrode lead, and the supporting lead are held spaced apart from one another. At least one of the plurality of element containers has a wire that connects the first electrode lead and the supporting lead and is covered with the resin molded body. | 05-19-2016 |
20160141447 | NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME - A method for producing a nitride semiconductor device. The method comprises providing a substrate made of a material other than a nitride semiconductor. The material has a hexagonal crystal structure. An upper face of the substrate has at least one flat section. The method further comprises growing a first nitride semiconductor layer on the upper face of the substrate. The first nitride semiconductor layer is made of monocrystalline AlN. The first nitride semiconductor layer has an upper face that is a +c plane. The first nitride semiconductor layer has a thickness in a range of 10 nm to 100 nm. The method further comprises growing a second nitride semiconductor layer on the upper face of the first nitride semiconductor layer. The second nitride semiconductor layer is made of In | 05-19-2016 |
20160133800 | LIGHT EMITTING APPARATUS AND PRODUCTION METHOD THEREOF - A light emitting apparatus includes an electrically insulating base member; a first electrically conductive pattern portion and a second electrically conductive pattern portion formed on an upper surface of the base member; a plurality of intermediate electrically conductive pattern portions arranged between the first and second electrically conductive pattern portions; at least one light emitting device mounted on at least one of the intermediate electrically conductive pattern portions; a protection element mounted on the first and second electrically conductive pattern portions; and a resin portion disposed around the at least one light emitting device such that (i) the first and second electrically conductive pattern portions are partially covered by the resin portion and partially exposed from the resin portion, and (ii) the protection element is covered by the resin portion. | 05-12-2016 |
20160133611 | LIGHT EMITTING DEVICE - A light emitting device includes a substrate, a first light emitting element, a second light emitting element, a first conductive pattern, and a second conductive pattern. The first conductive pattern is provided on the substrate and includes a first element mounting portion and a first wire connecting portion. The second conductive pattern is provided on the substrate to form a first wiring gap between the first conductive pattern and the second conductive pattern. A first recess is provided between the first element mounting portion and the first wire connecting portion and is in communication with the first wiring gap. At least a part of an outer shape of the first element mounting portion is defined by the first wiring gap and the first recess on a third side of the first element mounting portion adjacent to the second conductive pattern. | 05-12-2016 |
20160126435 | LIGHT EMITTING DEVICE - A light emitting device includes an electrically conductive member, a light emitting element, a wire, and a sealing member. The wire contains gold and silver and connects the electrically conductive member and the light emitting element. The wire includes a ball portion and a recrystallized region. The ball portion is provided on an electrode of the light emitting element. The recrystallized region is provided on the ball portion and has a length in a range of 50 μm to 90 μm. The sealing member has a lower surface and an upper surface opposite to the lower surface and covers the light emitting element and the wire so that the lower surface faces the electrically conductive member and the light emitting element and so that a distance from a top of the ball portion to the upper surface of the sealing member is 90 μm to 230 μm. | 05-05-2016 |
20160126428 | LIGHT EMITTING DEVICE - A light emitting device is provided which includes a light emitting element, a phosphor, and a sealing member. The light emitting element has a light emission peak wavelength in the range not shorter than 400 nm and not longer than 460 nm. The phosphor can be excited by light from the light emitting element, and emit luminescent radiation with a light emission peak wavelength in the range in not shorter than 600 nm and not longer than 700 nm. The sealing member includes a pigment for absorbing a part of the light from the light emitting element. X of the light emission chromaticity of the light emitting device falls within the range of x≧0.600 in the chromaticity coordinates in the CIE 1931 color space chromaticity diagram. | 05-05-2016 |
20160118558 | LIGHT EMITTING DEVICE, PACKAGE, AND METHODS OF MANUFACTURING THE SAME - A light emitting device includes a package including a resin member having an inner side surface defining a recess, and a lead frame supported by the resin member and arranged at a bottom surface of the recess; and a light emitting element electrically connected to the lead frame. An outer side surface of the resin member at a portion corresponding to the recess is at least partially covered with a reflective film. | 04-28-2016 |
20160118548 | LIGHT EMITTING DEVICE - A light emitting device has a plurality of light emitting elements that are arranged with gaps between the devices on a mounting board in a first direction, a wavelength-conversion member that covers the plurality of light emitting elements, a light reflective resin. Each light emitting element has an n-type semiconductor layer, an active layer provided in a part of the n-type semiconductor layer, and a p-type semiconductor layer provided on the active layer. In a second direction which is perpendicular to the first direction, an n-side electrodes are provided at least in regions at both ends of the n-type semiconductor layer, and a p-side electrode is provided on the surface of the p-type semiconductor layer, and wherein in the second direction, the wavelength-conversion member is positioned to approximately align both sides with both active layer side faces, or to dispose its sides outward of the active layer side faces. | 04-28-2016 |
20160111402 | LIGHT EMITTING DEVICE - There is presented a light emitting device, having plural light emitting elements disposed on a substrate, in which a protection element, such as a zener diode, can be disposed at an appropriate position. The light emitting device includes: a substrate; a light emitting section having plural light emitting elements disposed in a mounting area on the substrate; a positive electrode and negative electrode each having a pad section and wiring section to apply voltage to the light emitting section through the wiring sections; a protection element disposed at one of the positive electrode and negative electrode and electrically connected with the other one electrode; and a light reflecting resin formed on the substrate such as to cover at least the wiring sections and the protection element, wherein the wiring sections are formed along the periphery of the mounting area such that one end portions thereof are adjacent to each other. | 04-21-2016 |
20160109072 | LIGHT EMITTING DEVICE - A laser diode device includes a semiconductor laser element, a transmissive member, and phosphor-containing members. The transmissive member is disposed separately from the semiconductor laser element and includes a plurality of recessed portions on a side opposite to a side in which light from the semiconductor laser element enters and within a region that is irradiated with the light from the semiconductor laser element. The phosphor-containing members are disposed in the plurality of recessed portions. A portion of light enters and passes through the transmissive member between the phosphor-containing members and exits the transmissive member without passing through the phosphor-containing members. | 04-21-2016 |
20160104416 | LIGHT EMITTING APPARATUS, DISPLAY SECTION, AND CONTROLLER CIRCUIT - Second light emitting elements and third light emitting elements are disposed at common grid-points that are adjacent in four directions to each grid-point where a first light emitting element is disposed. The controller circuit samples input data at each grid-point to generate display data to illuminate each light emitting element; controls first light emitting element illumination based on first light emitting element color information contained in first display data, which are display data sampled at each grid-point where a first light emitting element is disposed; controls second light emitting element illumination based on second light emitting element color information contained in second display data, which are display data sampled at each grid-point where a second and third light emitting element is disposed; and controls third light emitting element illumination based on third light emitting element color information contained in the second display data. | 04-14-2016 |
20160097495 | LIGHT EMITTING DEVICE - A light emitting device includes a light emitting element adapted to emit a blue light, a sealing resin covering the light emitting element, and a sulfide phosphor-containing layer disposed at an outer side of a sealing resin. The sealing resin contains at least one of a KSF phosphor adapted to absorb a portion of the blue light emitted from the light emitting element to emit red light and a MGF phosphor adapted to absorb a portion of the blue light emitted from the light emitting element to emit red light. The sulfide phosphor-containing layer includes a sulfide phosphor adapted to absorb a portion of the blue light emitted from the light emitting element to emit red light and a MGF phosphor adapted to absorb a portion of the blue light emitted from the light emitting element to emit green light. | 04-07-2016 |
20160095184 | LIGHT-EMITTING DEVICE - A light-emitting device includes a base, a light-emitting element, a wavelength conversion member, and a light reflecting member. The base has a base upper surface. The light-emitting element is provided on the base and includes a semiconductor layer, a light transmissive substrate, and a recess. The semiconductor layer is provided on the base so that a semiconductor lower surface faces the base upper surface of the base. The light transmissive substrate has a substrate upper surface, a substrate lower surface opposite to the substrate upper surface, and a substrate side surface between the substrate upper surface and the substrate lower surface. The light transmissive substrate is provided on the semiconductor layer so that the substrate lower surface contacts a semiconductor upper surface of the semiconductor layer. The recess is provided on the substrate upper surface of the light transmissive substrate. The wavelength conversion member is provided in the recess. | 03-31-2016 |
20160093786 | LIGHT SOURCE, METHOD FOR MANUFACTURING THE LIGHT SOURCE, AND METHOD FOR MOUNTING THE LIGHT SOURCE - A light source includes a light emitting element configured to emit a light; a mounting substrate; and a ceramic substrate having a light emitting element mounted thereon and being bonded to the mounting substrate via a plurality of metal bumps made of gold, copper, a gold alloy, or a copper alloy. A method of manufacturing a light source includes forming a plurality of metal bumps on a mounting substrate; providing a ceramic substrate having at least one light emitting element mounted thereon; and bonding the mounting substrate and a ceramic substrate to each other via the metal bumps. | 03-31-2016 |
20160093780 | LIGHT EMITTING DEVICE AND METHOD FOR PRODUCING THE SAME - A light emitting device includes a semiconductor light emitting element; and a light reflective member having a multilayer structure and covering the side faces of the semiconductor light emitting element. The light reflective member includes: a first layer disposed on an inner, semiconductor light emitting element side, the first layer comprising a light-transmissive resin containing a light reflective substance, and a second layer disposed in contact with an outer side of the first layer, the second layer comprising a light-transmissive resin containing the light reflective substance at a lower content than that of the first layer. | 03-31-2016 |
20160093777 | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - The light emitting device includes a light emitting element, a wavelength converter, and a light guider. The light emitting element has an element upper surface, an element lower surface, and an element side surface. The wavelength converter has a converter lower surface. The wavelength is provided to be connected to the light emitting element. The converter lower surface has an exposed region that does not face the element upper surface. The light guider guides light from the light emitting element to the wavelength converter. The light guider covers the element side surface and the exposed region. The wavelength converter includes first and second wavelength converter parts. The first wavelength converter part faces the element upper surface and has a first thickness. The second wavelength converter part does not face the element upper surface and has a second thickness thinner than the first thickness. | 03-31-2016 |
20160093774 | LIGHT EMITTING ELEMENT - A light emitting element includes a semiconductor layer; an upper electrode disposed on an upper surface of the semiconductor layer; and a lower electrode disposed on a lower surface of the semiconductor later. In a plan view, the upper electrode includes a first extending portion extending in an approximately rectangular shape along an outer periphery of the semiconductor layer, a first pad portion connected to a first side among four sides of the first extending portion, a second pad portion connected to a second side that is opposite to the first side, among the four sides of the first extending portion, and a second extending portion and a third extending portion, each disposed in a region surrounded by the first extending portion, the second extending portion and the third extending portion each connecting the first pad portion and the second pad portion. | 03-31-2016 |
20160093773 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT - A semiconductor light-emitting element includes a first semiconductor layer of a first conductive type, a second semiconductor layer of a second conductive type, a light-emitting layer formed between the first semiconductor layer and the second semiconductor layer, a first electrode connected to the first semiconductor layer, and a second electrode connected to the second semiconductor layer. The second electrode includes an ohmic electrode contacting the second semiconductor layer, and a semiconductor electrode made of a semiconductor layer contacting the ohmic electrode. | 03-31-2016 |
20160093764 | METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR TEMPLATE - A method of manufacturing a nitride semiconductor template that includes a base substrate of a sapphire substrate and a nitride semiconductor layer represented by a general formula Al | 03-31-2016 |
20160093426 | BONDED MAGNET, BONDED MAGNET COMPONENT, AND BONDED MAGNET PRODUCTION METHOD - A bonded magnet is provided which includes first and second components. The first and second components have first and second non-action surfaces, and first and second action surfaces that intersect the first and second non-action surfaces, respectively. First and second flux groups curve inside the first and second components from the first and second non-action surfaces to the first and second action surfaces, respectively. The areas of the first and second non-action surfaces are greater than the first and second action surfaces, respectively. The flux densities on the first and second action surfaces are higher than the first and second non-action surfaces, respectively. The pole on the first non-action surface is opposite to the second non-action surface. The first and second non-action surfaces are coupled to each other. The first flux groups continuously extend from one to another. | 03-31-2016 |
20160091655 | BACKLIGHT DEVICE - A backlight device includes a light guide plate having an incident surface, a first side surface, and a second side surface. The first side surface extends from a first end of the incident surface and the second side surface extends from a second end of the incident surface. A green illuminant faces the incident surface and emits a green light toward the incident surface. A red illuminant faces the incident surface and emits a red light toward the incident surface. A white illuminant disposed on a side of at least one end of the first and second ends of the incident surface emits a white light toward the light guide plate. At least one of the emitted green light and the emitted red light includes a blue component having an emission peak wavelength in a range of 420 to 500 nm. | 03-31-2016 |
20160091180 | LIGHT EMITTING DEVICE, LIGHT EMITTING MODULE, AND METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE - A light emitting device includes a light emitting element, a first terminal, a second terminal, and a light reflecting member. The first terminal and the second terminal each have a substantially spherical shape and are electrically connected to the light emitting element. The light reflecting member holds the light emitting element, the first terminal, and the second terminal. The light reflecting member includes a bottom surface, an upper surface, a first side surface, a second side surface, a front surface, a back surface, a first terminal exposure surface, and a second terminal exposure surface. The light emitting device is to be placed via the bottom surface. The first terminal is exposed from the first terminal exposure surface to provide a first exposed portion. The second terminal is exposed from the second terminal exposure surface to provide a second exposed portion. | 03-31-2016 |
20160091151 | BACKLIGHT UNIT AND LIQUID CRYSTAL DISPLAY DEVICE - A backlight unit has a light-guide plate and a light source optically coupled with the light-guide plate, with which light is input from a plane of the light-guide plate and white-light is output from the first principal plane of the light-guide plate. The light source has a plurality of blue light emitting diodes, red phosphor material excited by light from the blue light emitting diodes and emits red light, and a plurality of green semiconductor lasers having emission peaks at green light wavelengths. | 03-31-2016 |
20160090528 | FLUORIDE FLUORESCENT MATERIAL, METHOD FOR PRODUCING THE SAME, AND LIGHT EMITTING DEVICE - A method for producing a fluoride fluorescent material including: preparing a first solution containing manganese, a second solution containing at least one cation selected from the group consisting of K | 03-31-2016 |
20160086927 | LIGHT EMITTING DEVICE - A light emitting device includes a base, a first light emitting element, a second light emitting element, and a sealing member. The first light emitting element has an active layer of a nitride semiconductor and has a first emission peak wavelength in a blue region. The second light emitting element has an active layer of a nitride semiconductor and has a second emission peak wavelength longer than the first emission peak wavelength of the first light emitting element. The sealing member includes a first region and a second region. The first region contains a phosphor to be excited by light from the first light emitting element. The first region is provided on an element mounting surface. A first upper surface of the first light emitting element is located in the first region. The second region does not substantially contain the phosphor and is provided on the first region. | 03-24-2016 |
20160079506 | WIRING SUBSTRATE AND LIGHT EMITTING DEVICE - A wiring substrate includes ceramic layers and a conductive member. The ceramic layers have an uppermost ceramic layer and a lowermost ceramic layer. The conductive member includes an upper conductive layer disposed on an upper surface of the uppermost ceramic layer, an internal conductive layer interposed between the ceramic layers, and a lower conductive layer disposed on a lower surface of the lowermost ceramic layer. The conductive member defines vias electrically connecting the upper conductive layer, the internal conductive layer, and the lower conductive layer. A total number of a first vias connected to the lower conductive layer is larger than a total number of a second vias connected to the upper conductive layer. | 03-17-2016 |
20160079505 | METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT HAVING THICK METAL BUMP - A manufacturing method of a flip-chip nitride semiconductor light emitting element includes a step of providing a nitride semiconductor light emitting element structure; a protective layer forming step; a first resist pattern forming step; a protective layer etching step; a first metal layer forming step; a first resist pattern removing step; a third metal layer forming step; a second resist pattern forming step; a second metal layer forming step; a second resist pattern removing step; and a third metal layer removing step. | 03-17-2016 |
20160079484 | LIGHT EMITTING DEVICE INCLUDING LIGHT EMITTING ELEMENT WITH PHOSPHOR - A light emitting device includes a light emitting element, a molded member, and a sealing member. The light emitting element is arranged on or above the molded member. The sealing member covers the light emitting element. The sealing member contains a phosphor, and a filler material. The phosphor can be excited by light of the light emitting element, and emit luminescent radiation. The filler material contains neodymium hydroxide, neodymium aluminate or neodymium silicate. The filler material absorbs a part of the spectrum of the mixed light of the light emitting element and the phosphor so that the other parts of the spectrum of this mixed light are extracted from the light emitting device. | 03-17-2016 |
20160072028 | PACKAGE AND LIGHT-EMITTING DEVICE - A package includes a resin molded body, a first lead electrode, a second lead electrode, and a recess portion. The recess portion is provided on a first side of the resin molded body and a light-emitting element is to be provided in the recess portion. The recess portion includes a bottom portion, a top portion, and a side wall. The bottom portion includes an element mount region and a wire connection region. An upper surface of the first lead electrode is exposed from the resin molded body in the element mount region and the element mount region has an outer peripheral shape in accordance with an outer peripheral shape of the light-emitting element when viewed in a height direction. The wire connection region is provided adjacent to the element mount region and is smaller than the element mount region. | 03-10-2016 |
20160064621 | METHOD OF MANUFACTURING LIGHT EMITTING DEVICE - A method of manufacturing a light emitting device includes providing a wafer having a substrate and a plurality of semiconductor stacked-layer bodies stacked on the substrate, an upper surface of the substrate being exposed at an outer peripheral region of each of the plurality of semiconductor stack bodies in a plan view, forming a separation layer integrally covering the upper surface of the substrate and an upper surface of the semiconductor stacked-layer body, the separation layer including a separation boundary, forming a support member on the separation layer, removing the substrate, forming a wavelength conversion layer on a side of the semiconductor stack body and the separation layer where the substrate is removed, the wavelength conversion layer made of a resin containing a wavelength conversion member, and removing the wavelength conversion layer located in the outer peripheral region by separating the separation layer at the separation boundary. | 03-03-2016 |
20160061419 | LIGHT EMITTING DEVICE - A light emitting device with improved safety in which leaking laser beam from a slit is converted into a visible light. A light emitting device includes a laser light source part and optical member that defines a slit. The optical member is disposed with the slit oriented on an optical path of the laser beam, while disposing a wavelength converting member on an inner wall defining the slit to convert a wavelength of the laser beam into a long-wavelength side visible light. | 03-03-2016 |
20160056357 | LIGHT EMITTING DEVICE, RESIN PACKAGE, RESIN-MOLDED BODY, AND METHODS FOR MANUFACTURING LIGHT EMITTING DEVICE, RESIN PACKAGE AND RESIN-MOLDED BODY - A method of manufacturing a light emitting device having a resin package which provides an optical reflectivity equal to or more than 70% at a wavelength between 350 nm and 800 nm after thermal curing, and in which a resin part and a lead are formed in a substantially same plane in an outer side surface, includes a step of sandwiching a lead frame provided with a notch part, by means of an upper mold and a lower mold, a step of transfer-molding a thermosetting resin containing a light reflecting material in a mold sandwiched by the upper mold and the lower mold to form a resin-molded body in the lead frame and a step of cutting the resin-molded body and the lead frame along the notch part. | 02-25-2016 |
20160053968 | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A light emitting device includes a light emitting element, a mounting surface, a first terminal, a second terminal, and a light reflecting member. The light emitting element includes a light emission surface to emit a light. The light emission surface of the light emitting element is inclined with respect to the mounting surface. The first terminal and the second terminal are electrically connected to the light emitting element. Each of the first terminal and the second terminal has a substantially spherical shape. The light reflecting member is to hold the light emitting element, the first terminal, and the second terminal. The light emission surface of the light emitting element is exposed from the light reflecting member. A portion of the first terminal and a portion of the second terminal are exposed from the light reflecting member so that each of the portion and the portion has a substantially circular shape. | 02-25-2016 |
20160049566 | LIGHT EMITTING DEVICE, RESIN PACKAGE, RESIN-MOLDED BODY, AND METHODS FOR MANUFACTURING LIGHT EMITTING DEVICE, RESIN PACKAGE AND RESIN-MOLDED BODY - A method of manufacturing a light emitting device having a resin package which provides an optical reflectivity equal to or more than 70% at a wavelength between 350 nm and 800 nm after thermal curing, and in which a resin part and a lead are formed in a substantially same plane in an outer side surface, includes a step of sandwiching a lead frame provided with a notch part, by means of an upper mold and a lower mold, a step of transfer-molding a thermosetting resin containing a light reflecting material in a mold sandwiched by the upper mold and the lower mold to form a resin-molded body in the lead frame and a step of cutting the resin-molded body and the lead frame along the notch part. | 02-18-2016 |
20160049388 | LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A light-emitting device may comprise a substrate, an electric wire fixed to the substrate, and a plurality of light-emitting diodes mounted to the electric wire. According to one embodiment, each of the plurality of light-emitting diodes is an LED chip, and the light-emitting diodes on the substrate are sealed individually or collectively by one or more sealing members. According to another embodiment, the substrate has a plurality of through holes, wherein a plurality of portions of the electric wire provided on a rear surface side of the substrate communicates with a front surface side of the substrate at the plurality of through holes of the substrate, and wherein the plurality of light-emitting diodes is respectively mounted to the respective portions of the electric wire that communicate with the front surface side of the substrate. Other embodiments relate to methods of manufacturing a light-emitting device. | 02-18-2016 |
20160043290 | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING LIGHT EMITTING DEVICE - A light emitting device includes a semiconductor light emitting element including a semiconductor stacked-layer body and an electrode disposed on a first surface of the semiconductor stacked-layer body; a resin member disposed on a first surface side of the semiconductor stacked-layer body; and a metal layer disposed in the resin member and electrically connected to the electrode. A recess is defined in an upper surface of the resin member. The metal layer is projected from the upper surface of the resin member, and is disposed to surround at least a portion of the recess. | 02-11-2016 |
20160035952 | LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE - A light emitting device ( | 02-04-2016 |
20160020369 | LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - Provided is a light emitting device that reduces color unevenness between a plurality of light emitting elements. A light emitting device | 01-21-2016 |
20160020363 | METHOD OF MANUFACTURING LIGHT EMITTING ELEMENT - A method of manufacturing a semiconductor light emitting element includes providing a semiconductor stacked layer body; forming an insulating layer on a portion of the semiconductor stacked layer body; forming a light-transmissive electrode covering an upper surface of the semiconductor stacked layer body and an upper surface of the insulating layer, and on a region at least partially overlapping a region for disposing an extending portion in a plan view; forming a light reflecting layer in each of the openings of the light-transmissive electrode; forming a protective layer on a main surface side of the semiconductor stacked layer body; forming a mask on an upper surface of the protective layer except for the region for forming the pad electrode; etching the protective layer to form an opening in the protective layer; and forming a pad electrode in the opening of the protective layer. | 01-21-2016 |
20160005942 | LIGHT EMITTING DEVICE HAVING DUAL SEALING RESINS - Provided is a light emitting device with improved light extracting efficiency and further higher heat releasing performance. A light emitting device includes a planar lead frame having a first lead and a second lead, and includes a light emitting element mounted on the first lead, a resin frame surrounding a periphery of the light emitting element, a first sealing resin filled in the inner side of the resin frame and sealing the light emitting element, and a second sealing resin covering the resin frame and the first sealing resin. Lower end of inner surface of the resin frame is arranged only on the first lead, and at an outside of the resin frame, and the second resin member covers at least a part of the first lead and the second lead. Of the back-surface of the first lead, a region directly under the blight emitting element is exposed. | 01-07-2016 |
20150379968 | DISPLAY APPARATUS - A display apparatus includes a plurality of light emitting elements, at least one common line, a power supply, a plurality of drive lines, and a controller. The at least one common line is connected to first ends of the plurality of light emitting elements. The plurality of drive lines are connected to second ends of the plurality of light emitting elements. The controller is to execute delay control on lighting possible periods in which the plurality of light emitting elements are to light in unit delay control periods so that an order of delaying the lighting possible periods in a single unit delay control period among the unit delay control periods is different from an order of delaying the lighting possible periods in any one of the unit delay control periods other than the single unit delay control period. | 12-31-2015 |
20150372188 | METHOD FOR PRODUCING SEMICONDUCTOR LIGHT EMITTING ELEMENT - A method for producing a semiconductor light emitting element includes a wafer preparation step, a first irradiation step, a second irradiation step, and a wafer division step. The wafer includes a semiconductor structure on a first main surface of a substrate. In the first irradiation step, a first light-condensing position in the thickness direction of the substrate is irradiated with a first laser beam from a second main surface of the substrate to form an altered area. The second main surface is opposite to the first main surface. In the second irradiation step, a second light-condensing position is irradiated with a second laser beam. The second light-condensing position is located at a position in the altered area different from the first light-condensing position. In the wafer division step, the wafer is divided into individual light emitting elements. | 12-24-2015 |
20150364643 | METHOD OF MANUFACTURING LIGHT EMITTING ELEMENT - A method of producing light emitting elements includes providing a wafer that includes a growth substrate and a semiconductor structure formed on the growth substrate, a lower side of the wafer being a growth substrate side, and an upper side of the wafer being a semiconductor structure side as an upper side; forming a separation groove in the wafer from the upper side of the wafer to demarcate portions of the semiconductor structure, the separation groove extending in a depth direction to a location in the wafer; forming a p-electrode and an n-electrode on an upper side of each of the demarcated portions of the semiconductor structure; forming a dielectric multilayer film at an upper side of the wafer, including portions defining the separation groove, by using an atomic layer deposition method; and separating the wafer into a plurality of light emitting elements by removing a portion of the wafer from a lower side of the wafer to at least the location to which the separation groove extends. | 12-17-2015 |
20150362135 | LIGHT SOURCE DEVICE AND PROJECTOR - A light source device includes a light-emitting element; a base that includes a plurality of segment regions and that is controllable so that light from the light-emitting element sequentially enters the respective segment regions; a fluorescent member that is provided in at least one of the segment regions and that includes a fluorescent material that is excitable by light from the light-emitting element and configured to emit light with a different wavelength from the light emitted from the light-emitting element; and a filter that is provided so as to correspond to at least one of the fluorescent members, which is configured to transmit at least a part of light from the fluorescent material, and which is configured to transmit a part of light that is transmitted through the fluorescent member among the light from the light-emitting element. | 12-17-2015 |
20150349336 | POSITIVE ELECTRODE ACTIVE MATERIAL FOR NONAQUEOUS SECONDARY BATTERY - The present invention provides a positive electrode active material for a non-aqueous secondary battery including: core particles including, as a main component, a lithium metal composite oxide represented by the following formula: Li | 12-03-2015 |
20150349213 | RED PHOSPHOR AND LIGHT EMITTING DEVICE INCLUDING THE SAME - A red phosphor including the composition represented by the following general formula. | 12-03-2015 |
20150349207 | LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A light-emitting device includes a semiconductor light-emitting element, a first resin layer, a first metallic layer, a second resin layer, and a second metallic layer. The semiconductor light-emitting element includes a semiconductor stacked body and an electrode provided on one side of the semiconductor stacked body. The second resin layer is provided on the first resin layer and has a lower surface in contact with the first resin layer and an upper surface opposite to the lower surface. The second metallic layer is provided in the second resin layer and has a metallic lower surface and a metallic upper surface opposite to the metallic lower surface. The metallic upper surface is exposed from the second resin layer. The metallic upper surface of the second metallic layer is at least partially lower in height from the semiconductor stacked body than the upper surface of the second resin layer. | 12-03-2015 |
20150349203 | NITRIDE SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING THE SAME - A nitride semiconductor element includes a sapphire substrate including: a main surface extending in a c-plane of the sapphire substrate, and a plurality of projections disposed at the main surface, the plurality of projections including at least one projection having an elongated shape in a plan view; and a nitride semiconductor layer disposed on the main surface of the sapphire substrate. The at least one projection has an outer edge extending in a longitudinal direction of the elongated shape, the outer edge extending in a direction oriented at an angle in a range of −10° to +10° with respect to an a-plane of the sapphire substrate in the plan view. | 12-03-2015 |
20150342045 | SEMICONDUCTOR DEVICE MOUNTING STRUCTURE, BACKLIGHT DEVICE, AND MOUNTING SUBSTRATE - A semiconductor device mounting structure includes a semiconductor device and a mounting substrate. The semiconductor device includes a first external connection terminal and a device-side mounting insulating region. The first external connection terminal is provided at a first end and has a metal region on a semiconductor mounting surface of the semiconductor device. The device-side mounting insulating region is defined by the metal region on the semiconductor mounting surface. The semiconductor mounting surface faces a substrate mounting surface. The mounting substrate has on the substrate mounting surface a land pattern made of an electrically conductive material to be electrically connected to the first external connection terminal. The land pattern is provided in a first shape to surround the device-side mounting insulating region and includes a land-side insulating region which has a second shape to correspond to a periphery of the device-side mounting insulating region. | 11-26-2015 |
20150341992 | DISPLAY DEVICE - A display device includes a substrate, a mask, a case, and a sealing member. The mask has a mask surface and a side wall provided around a periphery of the mask surface and projecting backwardly from the mask surface. The mask is provided on a front surface of the substrate so that the mask surface faces the front surface of the substrate and the side wall surrounds a side surface of the substrate. The case is provided on a back surface of the substrate to sandwich the substrate between the mask and the case. The sealing member is provided in a first region, a second region, and a third region provided between the first region and the second region. The sealing member has a first protrusion which is in contact with a step end surface of the case in the third region. | 11-26-2015 |
20150340574 | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - The light emitting device is manufactured by processing that includes forming encapsulating member at least on the upper surface and upper surface perimeter of a light emitting element, removing at least the part of the encapsulating member that is on upper surface of the light emitting element and form a cavity with a perimeter that surrounds the light emitting element, and forming a wavelength-conversion layer inside the cavity to convert the wavelength of light emitted from the light emitting element. | 11-26-2015 |
20150340572 | MOLDED PACKAGE FOR LIGHT EMITTING DEVICE - The present invention provides a molded package for a light emitting device including a molded resin and first and second leads, the exposed surface of the first lead having a first and second edge portions opposed to each other so as to put a mounting area therebetween in a first direction, the first and second edge portions respectively having one first cutout and second cutouts, the mounting area having a size not less than a distance between the first and the second cutouts and less than a distance between the first the second edge portions in the first direction. | 11-26-2015 |
20150340567 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR PRODUCING THE SAME - A method for producing a semiconductor light emitting device includes a light-emitting-element provision step, a light-emitting-element placement step, and a light-reflection-layer coating step, in this order. In the light-emitting-element provision step, a light emitting element is prepared which includes a semiconductor layer structure on the lower-surface side of a substrate. In the light-emitting-element placement step, the light emitting element is placed on or above a supporting member from the semiconductor layer structure side. In the light-reflection-layer coating step, the surfaces of the substrate and the semiconductor layer structure is coated with a light reflection layer by using atomic layer deposition so as to expose at least a part of the upper surface or a part of side surface of the substrate as a light-extracting region. The intended functioning of the light reflection layer can be ensured. The highly reliable light reflection layer can make the device good quality. | 11-26-2015 |
20150338727 | LIGHT SOURCE DEVICE - Provided is a high-emission light source device which is capable of obtaining a desired color tone of red light and can be mounted on a small projector. | 11-26-2015 |
20150333236 | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - To provide a method of manufacturing at low cost a light emitting device that converts the wavelength of light radiated by a light emitting element and emits, the method includes: forming a phosphor layer on a translucent substrate; arranging a plurality of light emitting elements with a predetermined spacing, the light emitting elements having an electrode formed face provided with positive and negative electrodes respectively and arranged with the electrode formed faces on the top; embedding a resin containing phosphor particles so that an upper face of the embedded resin does not bulge over a plane containing the electrode formed faces; and curing the resin, and then cutting and dividing the cured resin, the phosphor layer and the translucent substrate into a plurality of light emitting devices each including one or more of the light emitting elements. | 11-19-2015 |
20150325760 | LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - A light emitting device includes a light emitting element, a terminal substrate and a fixing member. The light emitting element is a semiconductor laminate having a first semiconductor layer, a light emitting layer, and a second semiconductor layer that are laminated in that order, a first electrode connected to the first semiconductor layer, and a second electrode connected to the second semiconductor layer. The terminal substrate includes a pair of terminals connected to the first electrode and the second electrode, and an insulator layer that fixes the terminals. At least a part of the outer edges of the terminal substrate is disposed more to a center of the light emitting device than the outer edges of the semiconductor laminate. The fixing member fixes the light emitting element and the terminal substrate. | 11-12-2015 |
20150325751 | SEMICONDUCTOR LIGHT EMITTING ELEMENT - A semiconductor light emitting element includes a first conductive type semiconductor layer, a light emitting layer, and a second conductive type semiconductor layer disposed in this order. The semiconductor light emitting element includes first and second electrodes, a first insulating film and a translucent electrode. The first electrode is provided on the first conductive type semiconductor layer and includes a first pad portion and a first extending portion. The first insulating film covers the first extending portion. The translucent electrode is connected to an upper surface of the second conductive type semiconductor layer and extends over the first insulating film. The second electrode is connected to the translucent electrode at a position on the first insulating film. The second electrode includes a second pad portion and a second extending portion extending along the first extending portion so as to be superimposed over the first extending portion. | 11-12-2015 |
20150325489 | LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - The light-emitting device has a plurality of light-emitting elements that is mounted on one or more wiring patterns on a substrate. A new light-emitting element that replaces a defective element is mounted on the same wiring pattern on which the defective element is mounted. The defective element or a trace that remains alter removal of the defective element is sealed by a same sealing member by which the new light-emitting element is sealed. | 11-12-2015 |
20150322338 | METHOD OF MANUFACTURING FLUORIDE PHOSPHOR - A method of manufacturing a fluoride phosphor includes mixing a first solution which contains at least Mn and F, a second solution which contains at least K and F, and a third solution which contains at least Si and F to form phosphor cores whose composition is represented by a formula K | 11-12-2015 |
20150318458 | LIGHT EMITTING DEVICE MOUNT AND LIGHT EMITTING APPARATUS - A light emitting device mount includes a positive lead terminal, a negative lead terminal, and a resin portion. Each of the positive lead terminal and the negative lead terminal includes a first main surface, a second main surface opposite to the first main surface in a thickness direction of each of the positive lead terminal and the negative lead terminal, and an end surface which is provided between the first main surface and the second main surface and which includes a first recessed surface area and a second recessed surface area. The first recessed surface area extends from the first main surface. The second recessed surface area extends from the second main surface, includes a closest point closest to the first main surface, and includes an extension part that extends outward of the closest point and toward the second main surface. | 11-05-2015 |
20150311411 | LIGHT EMITTING DEVICE - A light emitting device includes a package that has an opening, a first outer side surface of a first resin and a second outer side surface of a second resin, the second resin having a reflectance higher than that of the first resin, and the second outer side surface being positioned below the first outer side surface; and a lead frame that is buried in the package such that a part of the lead frame is exposed at a bottom surface of the opening, and a part of the lead frame projects from the second outer side surface. | 10-29-2015 |
20150311410 | LIGHT EMITTING DEVICE - A light emitting device includes a semiconductor chip including a p-type semiconductor layer and an n-type semiconductor layer, the semiconductor chip being adapted to emit light between the p-type semiconductor layer and the n-type semiconductor layer; a p-side pad electrode disposed on an upper surface side of the semiconductor chip and over the p-type semiconductor layer; an n-side pad electrode disposed on an upper surface side of the semiconductor chip and over the n-type semiconductor layer; a resin layer disposed to cover the upper surface of the semiconductor chip; a p-side connection electrode and an n-side connection electrode disposed at an outer surface of the resin layer and positioned on the upper surface side of the semiconductor chip; and a metal wire disposed in the resin. The metal wire is adapted to make connection at least one of between the p-side pad electrode and the p-side connection electrode, and between the n-side pad electrode and the n-side connection electrode. | 10-29-2015 |
20150311395 | LIGHT EMITTING DEVICE - A light emitting element includes an insulating substrate; a semiconductor portion disposed on the substrate, the semiconductor portion having an n-type semiconductor layer and a p-type semiconductor layer in order from a substrate side; an n-side electrode electrically connected to the n-type semiconductor layer; and a p-side electrode electrically connected to the p-type semiconductor layer. The semiconductor portion includes a first through portion defined by a first inner surface formed at the semiconductor portion, the first through portion penetrating through the n-type semiconductor layer and the p-type semiconductor layer to expose the substrate. The p-side electrode includes: a p-side light-transmissive member that is connected to the p-type semiconductor layer and extends above the substrate in the first through portion, and a p-side pad portion that is disposed in the first through portion and that is connected to the p-side light-transmissive member above the substrate in the first through portion. | 10-29-2015 |
20150311388 | NITRIDE SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING THE SAME - A method of manufacturing a nitride semiconductor element includes dry etching a main surface of a sapphire substrate at a c-plane side thereof, using a mask provided on the main surface, to form a plurality of projections, each having a circular bottom surface; wet etching the sapphire substrate to form an upper part of each projection into a triangular pyramid shape while maintaining the circular bottom surface of the projection; and growing a semiconductor layer made of a nitride semiconductor on a dry etched surface and a wet etched surface of the sapphire substrate. | 10-29-2015 |
20150303648 | LIGHT EMITTING DEVICE - A light emitting device includes a base; a plurality of semiconductor laser elements that are disposed on the base and that are configured to emit light laterally from the plurality of semiconductor laser elements; a reflecting member that is disposed on the base and configured to reflect light from the plurality of semiconductor laser elements; a surrounding part that is disposed on the base and that surrounds the plurality of semiconductor laser elements and the reflecting member; a wiring part that is disposed on the base so as to extend to a location outside of the surrounding part, the wiring part being electrically connected to the plurality of semiconductor laser elements; a radiating body disposed on the surrounding part, the radiating body comprising at least one of a metal and a ceramic, and the radiating body having an opening; and a wavelength converting member that is located in the opening of the radiating body, the wavelength converting member being configured to convert a wavelength of light that is emitted from the plurality of semiconductor laser elements and reflected upward by the reflecting member. | 10-22-2015 |
20150303356 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor light emitting device that achieves miniaturization and high brightness is provided. The semiconductor light emitting device has a light extraction surface ( | 10-22-2015 |
20150295153 | SEMICONDUCTOR DEVICE - The present invention provides a semiconductor device in which wet-spreading of an adhesive member for bonding the semiconductor element on a base body is suppressed. | 10-15-2015 |
20150295152 | LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - A light emitting device includes a semiconductor light emitting element, a resin layer, and a metal wire. The semiconductor light emitting element includes a semiconductor stack and an electrode. The semiconductor stack has one surface. The metal wire has a first surface, a second surface opposite to the first surface, and an end surface between the first surface and the second surface. The metal wire is provided in the resin layer and electrically connected to an upper surface of the electrode via the first surface. The end surface of the metal wire is exposed from the resin layer. A lower end of the end surface closest to the first surface of the metal wire that is exposed from the resin layer is provided at an opposite side of the one surface of the semiconductor stack with respect to the upper surface of the electrode. | 10-15-2015 |
20150292687 | LIGHT EMITTING DEVICE - A light emitting device includes a semiconductor laser element; a cap defining a through-hole allowing light from the semiconductor laser element to pass therethrough; and a wavelength converting member disposed in the through-hole defined in the cap, the wavelength converting member being configured to emit light that has a wavelength different from a wavelength of light from the semiconductor laser element. The cap includes a first member made of a ceramic, and a second member made of a metal material. The through-hole includes a first through-hole penetrating the first member, and a second through-hole penetrating the second member. The wavelength converting member is disposed on the second member. | 10-15-2015 |
20150291878 | FLUORIDE FLUORESCENT MATERIAL AND METHOD FOR PRODUCING THE SAME - Provided are a red light emitting fluorescent material excellent in durability, and a method for producing the red light emitting fluorescent material. The present disclosure provides a method for producing a fluoride fluorescent material that includes subjecting a mixture that contains a fluoride in a liquid medium to a pressurization treatment and a heating treatment, the fluoride having a chemical composition represented by the following formula (I). The present disclosure also provides a fluoride fluorescent material that exhibits a rate of decrease in light-emitting energy efficiency is 5% or less after the fluoride fluorescent material is irradiated with laser light having a wavelength of 445 nm at an optical density of 3.5 W/cm | 10-15-2015 |
20150280082 | LIGHT EMITTING DEVICE - A light emitting device includes a base member, a light emitting element, and a sealing member. The substrate includes a wiring portion. The element is arranged on or above the substrate. The sealing member covers the element, and at least a part of the substrate. The sealing member includes a wavelength conversion member. The part of the substrate is divided into first and second sections by a straight line that passes through the center of the part as viewed in plan view. The wiring portion is arranged so that its area on the first section side is larger than on the second section side. The element is arranged so that its area in the second section is larger than the first section. The height of the sealing member on the second section side is greater than on the first section side. | 10-01-2015 |
20150280077 | Light Emitting Device that Includes Protective Film Having Uniform Thickness - A light emitting device includes an electrically conductive member provided with a reflective film; a light emitting element mounted on the reflective film; and a protective film continuously covering a surface of the light emitting element and a surface of the reflective film. A thickness of the protective film on the reflective film in a vicinity of the light emitting element is substantially equal to a thickness of the protective film on the reflective film in the region except for the vicinity of the light emitting element. | 10-01-2015 |
20150280055 | METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR ELEMENT - A first nitride semiconductor layer laminating step includes a first step and a second step. In the first step, an entire upper surface of the sapphire substrate is coated with a first nitride semiconductor layer, while supplying oxygen. In the second step, crystals of the first nitride semiconductor layer are grown by supplying oxygen at a smaller flow rate than that of oxygen supplied in the first step, or without supplying the oxygen. | 10-01-2015 |
20150276142 | DISPLAY SYSTEM - A display system includes a first display unit and a second display unit, each including a substrate having a plurality of light-emitting elements arranged in matrix, a mask disposed at a front side of the substrate, and a case having a main body supporting the substrate from its back side. The first display unit is arranged above the second display unit such that a gap is formed between the cases of the first display unit and the second display unit. The mask of the second display unit includes a plurality of canopy sections above and along each row of the plurality of light-emitting elements, except for an uppermost row. The main body of the case of the second display unit has a canopy section above and along the light-emitting elements in the uppermost row of the second display unit, at least partially covering the gap. | 10-01-2015 |
20150270456 | LIGHT EMITTING APPARATUS AND PRODUCTION METHOD THEREOF - A light emitting apparatus includes an electrically insulating base member having a longitudinal direction; a pair of electrically conductive pattern portions formed on an upper surface of the base member; at least one light emitting device that is electrically connected to the pair of electrically conductive pattern portions; and a resin portion that surrounds at least a side surface of the at least one light emitting device with at least an upper surface of the at least one light emitting device being exposed from the resin portion and partially covers the pair of electrically conductive pattern portions. Each of the pair of electrically conductive pattern portions extends toward a periphery of the base member from resin-covered parts of the electrically conductive pattern portions. Each of the electrically conductive pattern portions forms a narrower area and a wider area in the longitudinal direction. | 09-24-2015 |
20150270443 | SAPPHIRE SUBSTRATE AND SEMICONDUCTOR LIGHT EMITTING DEVICE - The sapphire substrate has a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device and comprising a plurality of projections of the principal surface, wherein an outer periphery of a bottom surface of each of the projections has at least one depression. This depression is in the horizontal direction. The plurality of projections are arranged so that a straight line passes through the inside of at least any one of projections when the straight line is drawn at any position in any direction in a plane including the bottom surfaces of the plurality of projections. | 09-24-2015 |
20150262988 | LIGHT EMITTING DEVICE FOR LINEAR LIGHT SOURCE - A light emitting device includes a substrate; a first metal film formed on the substrate; a plurality of light emitting elements arranged in a line, each comprising a second metal film on a lower face thereof, each having a quadrilateral outline; and a die bond placed between the first metal film and the second metal films to fix the second metal film on the first metal film. The substrate includes low wettability areas having wettability to the die bond lower than the first metal film. Each of the low wettability areas is disposed between two of the light emitting elements, and each of four sides of the quadrilateral outline is adjacent to the low wettability area different from the low wettability areas adjacent to one of the other three sides. | 09-17-2015 |
20150262979 | METHOD OF MANUFACTURING ILLUMINATION DEVICE, ILLUMINATION DEVICE, ILLUMINATION DEVICE MANUFACTURING SYSTEM, METHOD OF CLASSIFYING COLOR TONE OF LIGHT EMITTING DEVICES, AND METHOD OF CLASSIFYING LIGHT EMITTING DEVICES - In a method of manufacturing an illumination device, a color tone of each of a plurality of light emitting devices having different color tones is detected. In which region among a first region, a second region, a third region, a fourth region, a fifth region, and a sixth region on a chromaticity diagram the color tone of each of the plurality of light emitting devices is is determined based on the detected color tone. The chromaticity diagram has a first color tone area and a second color tone area in which the first color tone area is provided. The second color tone area is divided into the first region through the sixth region. The plurality of light emitting devices are classified into the first region through the sixth region based on the determined color tone. | 09-17-2015 |
20150249191 | METHOD OF MANUFACTURING LIGHT-EMITTING DEVICE AND WIRING SUBSTRATE FOR LIGHT-EMITTING ELEMENT - A method of manufacturing a light-emitting device includes flattening top portions of solder bumps disposed on a wiring substrate, disposing a light-emitting element on the solder bumps whose top portions are flattened, and heating the solder bumps to be melt and to be fused so as to provide an adhesive with which the light-emitting element is secured on the wiring substrate. | 09-03-2015 |
20150229105 | NITRIDE SEMICONDUCTOR LASER ELEMENT - A nitride semiconductor laser element includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer between the n-type semiconductor layer and the p-type semiconductor layer. The active layer includes well layers, and at least one barrier layer provided between the well layers. The barrier layer includes a barrier layer having band gap energy higher than that of an n-side optical guide layer. The p-type semiconductor layer includes an electron barrier layer having band gap energy higher than that of all barrier layers comprised in the active layer. A p-side optical guide layer includes a first region disposed on a side of a final well layer and having band gap energy lower than that of the n-side optical guide layer, and a second region disposed on a side of the electron barrier layer and having band gap energy higher than that of the n-side optical guide layer. | 08-13-2015 |
20150228875 | LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - A light-emitting device includes lead frames, a light-emitting element placed on a bottom of a recessed portion formed at one of the lead frames, and a light-transmitting resin covering the light-emitting element. The lead frames have a covered region which is covered with the light-transmitting resin and an exposed region exposed out of the light-transmitting resin. The light-emitting device has a gap between the lead frame and the light-transmitting resin at an inner side surface of the recessed portion, the gap having a width longer than a main wavelength of light from the light-emitting element. The lead frame is in close contact with the light-transmitting resin at an end of the covered region, which is located in a boundary with the exposed region or in the vicinity of the boundary within the covered region. | 08-13-2015 |
20150214444 | PHOSPHOR AND LIGHT EMITTING DEVICE USING THE SAME - A phosphor for absorbing light in a region from ultraviolet to visible light and emitting light whose emission peak wavelength being in a range of 600 nm to 650 nm, represented by general formula shown below, and having a difference between the emission peak wavelength and a half width being larger than 543 nm. | 07-30-2015 |
20150189703 | LIGHT EMITTING DEVICE - A light emitting device comprising: a base; a light emitting element arranged on a surface of the base; a first resin layer arranged to surround a side portion of the light emitting element and to be spaced apart from the side portion; and a second resin layer arranged on the surface of the base, the second resin layer being present at least on a top of the light emitting element, on a top of the first resin layer, and in an area between the light emitting element and the first resin layer, wherein the first resin layer comprises a light transmissive resin and a first fluorescent material, wherein the second resin layer comprises a light transmissive resin and a second fluorescent material, and wherein the second fluorescent material exhibits higher heat resistance than that of the first fluorescent material. | 07-02-2015 |
20150184067 | FLUORIDE FLUORESCENT MATERIAL AND METHOD FOR PRODUCING THE SAME - A fluoride fluorescent material, comprising:
| 07-02-2015 |
20150181711 | WIRING SUBSTRATE AND LIGHT EMITTING DEVICE - Discoloration is suppressed in a wiring substrate including a conductive member including silver. A wiring substrate includes a ceramic layer and a conductive member including a conductive layer disposed on an upper surface of the ceramic layer. The conductive member includes silver and at least a portion of an upper surface of the conductive layer is covered with a covering layer. The covering layer includes an inorganic reflecting layer and a glass layer stacked on the inorganic reflecting layer. | 06-25-2015 |
20150180026 | POSITIVE ELECTRODE ACTIVE MATERIAL FOR NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY AND METHOD FOR PRODUCING THE SAME - A positive electrode active material for a non-aqueous electrolyte secondary battery, the positive electrode active material including: core particles containing a lithium-transition metal composite oxide represented by the formula: Li | 06-25-2015 |
20150162509 | LIGHT EMITTING DEVICE - A light emitting device ( | 06-11-2015 |
20150155457 | METHOD OF MANUFACTURING LIGHT EMITTING DEVICE - A method of manufacturing a light emitting device includes providing an insulating substrate having an electrically conductive member on a surface of the insulating substrate; after providing the insulating substrate, covering the electrically conductive member with a reflecting member by using electrodeposition or electrostatic coating; after covering the electrically conductive member with the reflecting member, insulating a portion of the electrically conductive member to form an insulating member; and singulating the substrate by cutting the substrate to form a plurality of singulated substrates, wherein the substrate is singulated such that, in each singulated substrate, the electrically conductive member is spaced apart from end portions of the singulated substrate. | 06-04-2015 |
20150137152 | LIGHT EMITTING ELEMENT AND LIGHT EMITTING ELEMENT ARRAY - A light emitting element includes a semiconductor including an active layer, and a planar shape of the light emitting elements including a concave polygon. The planar shape of the concave polygon has interior angles including at least one acute angle. | 05-21-2015 |
20150131043 | METHOD OF MANUFACTURING IMAGE DISPLAY DEVICE AND METHOD OF SELECTING COLOR FILTER - A method of manufacturing an image display device which is configured to produce high luminance while maintaining color reproductivity and a method of efficiently selecting a combination of a light emitting device and a color filter. A method of manufacturing an image display device includes preparing a light emitting device which has a light source, a green fluorescent material and a red fluorescent material activated with tetravalent manganese ions, and configured to emit light which includes a visible light region, providing a color filter candidate which include red, green, and blue pixels in which the ratio of an integral value of the wavelength range of 560 to 640 nm with respect to the ratio of an integral value of the wavelength range of 460 to 640 nm in a spectral transmittance curve of the green pixel is 23% or greater, providing a color filter configured to satisfy a NTSC ratio of 65% or greater when the color filter candidate and the light emitting device are combined, and constructing an image display device with the use of the color filter, the light emitting device, and a controlling member for optical transmission. | 05-14-2015 |
20150129923 | OPTICAL-SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing an optical-semiconductor device, including forming a plurality of first and second electrically conductive members that are disposed separately from each other on a support substrate; providing a base member formed from a light blocking resin between the first and second electrically conductive members; mounting an optical-semiconductor element on the first and/or second electrically conductive member; covering the optical-semiconductor element by a sealing member formed from a translucent resin; and obtaining individual optical-semiconductor devices after removing the support substrate. | 05-14-2015 |
20150118775 | METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR ELEMENT - A method of manufacturing a nitride semiconductor element includes preparing a wafer having a nitride semiconductor layer which includes p-type dopants, forming an altered portion by condensing laser beam on the wafer, and after the forming an altered portion, forming a p-type nitride semiconductor layer by subjecting the wafer to annealing. | 04-30-2015 |
20150115294 | LIGHT EMITTING DEVICE INCLUDING RESIN-MOLDED BODY WITH WHITE PORTION AND BLACK PORTION - A light emitting device includes a resin-molded body including: a light emitting window, a white portion, and a black portion, wherein, in a top plan view of the light emitting device, the white portion surrounds the light emitting window, and the black portion surrounds the white portion; an electrode protruding from an outer surface of the resin-molded body; and
| 04-30-2015 |
20150108397 | POSITIVE ELECTRODE COMPOSITION FOR NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY, METHOD OF MANUFACTURING THEREOF, AND NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY - A positive electrode composition for a non-aqueous electrolyte secondary battery includes a lithium transition metal composite oxide represented by a formula Li | 04-23-2015 |
20150098248 | LIGHT EMITTING DEVICE MOUNTING STRUCTURAL BODY - A light emitting device mounting structural body includes a wiring substrate having wirings disposed on a base member and a light emitting device having a resin molded body mounted on the wiring substrate. The wiring substrate has a recess in its periphery. The resin molded body has a lower surface and a side surface. The lower surface has an arrangement portion and a projecting portion, the arrangement portion has an outer lead electrically connected to the wiring portion disposed beneath the arrangement portion, and the projecting portion is projected further downward relative to the arrangement portion. The side surface has an opening with a light emitting element mounted thereon, the opening is expanded in the projecting portion, and at least a portion of the opening is housed in the recess of the wiring substrate. | 04-09-2015 |
20150084532 | DISPLAY DEVICE - A display device includes a plurality of common lines, a plurality of driving lines, a plurality of light emitting elements, a source driver, a sink driver, discharge devices, discharge limiting devices, and rectifying devices. The discharge devices are connected to the common lines and configured to lower voltage at the connected common lines. The discharge limiting devices are connected to the common lines and to the discharge devices, and apply a limitation so that the voltage at the connected common lines is not lowered below a prescribed value by the discharge devices. The rectifying devices are connected between the discharge devices and the discharge limiting devices, and the common lines, and pass a current from the common lines toward the discharge devices and the discharge limiting devices but do not pass a current from the discharge devices and the discharge limiting devices toward the common lines. | 03-26-2015 |
20150055060 | FLUORIDE FLUORESCENT MATERIAL AND METHOD FOR PRODUCING THE SAME AS WELL AS LIGHT EMITTING DEVICE USING THE SAME - The present invention provides a method for producing a fluoride fluorescent material, the method comprising:
| 02-26-2015 |
20150035430 | FLUORIDE FLUORESCENT MATERIAL AND LIGHT EMITTING DEVICE USING THE SAME - The present invention provides a fluoride fluorescent material comprising a chemical composition represented by the following formula (I): | 02-05-2015 |
20150034992 | LIGHT EMITTING DEVICE - A light emitting device includes a substrate, metallization, a light emitting element, conducting wire, light reflective resin, and insulating material. The metallization is provided on a surface of the substrate that is made of insulating substance. The light emitting element is mounted on the substrate. The conducting wire electrically connects the metallization and the light emitting element. The light reflective resin is provided on the substrate to reflect light from the light emitting element. The insulating material covers at least part of metallization surfaces. The insulating material is established to come in contact with a side of the light emitting element. | 02-05-2015 |
20150021640 | LIGHT-EMITTING DEVICE - A light-emitting device includes a lead frame, a white resist, a light-emitting element, and a wire. The white resist is provided on the lead frame to be in contact with the lead frame. The white resist has an opening to expose the lead frame. The light-emitting element is disposed on the white resist and includes a transparent substrate and a semiconductor layer. The transparent substrate is bonded to the white resist via a bonding member. The semiconductor layer is provided on the transparent substrate. The wire connects the light-emitting element and the lead frame at the opening. | 01-22-2015 |
20150008463 | FLUORIDE PHOSPHOR AND LIGHT EMITTING DEVICE USING THE SAME AND METHOD OF MANUFACTURING THE FLUORIDE PHOSPHOR - A fluoride phosphor activated with tetravalent Mn can absorb blue light and emit red light, and is represented by the general formula: K | 01-08-2015 |
20140367797 | FIELD-EFFECT TRANSISTOR - A field-effect transistor includes a plurality of unit elements which include a semiconductor layer having a first surface, a plurality of gate electrodes, drain electrodes, and source electrodes. Each of the plurality of gate electrodes is provided to define a drain electrode formation region which is surrounded by each of the plurality of gate electrodes. Each of the source electrodes is disposed in a source electrode formation region surrounded by the plurality of gate electrodes of the plurality of unit elements which are adjacent to each other. A source-gate distance between the each of the source electrodes and the each of the plurality of gate electrodes of the plurality of unit elements is shorter than a drain-gate distance between each of the drain electrodes and the each of the plurality of gate electrodes. The source electrode formation region is smaller than the drain electrode formation region. | 12-18-2014 |
20140362570 | LIGHT EMITTING DEVICE - A light emitting device include a plurality of arrayed light emitting elements, each light emitting element including a plurality of side faces; at least one light reflecting member that covers the side faces of each of the light emitting elements; and at least one light blocking member disposed in between light emitting elements and disposed separated from the light emitting elements. | 12-11-2014 |
20140353736 | FIELD-EFFECT TRANSISTOR - A field-effect transistor includes a plurality of unit elements, an insulating film, and a wiring. The plurality of unit elements include a semiconductor layer having a first surface, a plurality of drain electrodes, gate electrodes, and a source electrode. The source electrode is electrically continuously provided across the plurality of unit elements outside the gate electrodes on the first surface and has narrow parts between the gate electrodes which are spaced apart from each other and which belong to adjacent unit elements among the plurality of unit elements. The narrow parts have a width narrower than a width of other parts of the source electrode. The insulating film has openings provided on the source electrode. The insulating film covers the source electrode across the plurality of unit elements. The openings are arranged at the other parts of the source electrode on both sides of each of the narrow parts. | 12-04-2014 |
20140339587 | SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME - A semiconductor light emitting element having: a semiconductor laminated body; a full surface electrode containing an Ag provided on an upper surface of the p-type semiconductor layer; a cover electrode that covers a surface of the full surface electrode, is provided to contact on the upper surface of the p-type semiconductor layer at an outer edge of the full surface electrode, and is made of an Al-based metal material; a p-side electrode that is provided on a portion of a surface of the cover electrode; a metal oxide film that covers other surfaces of the cover electrode and contains an oxide of a metal material forming the cover electrode; and an insulation film that is made of an oxide and covers a surface of the metal oxide film, is provided. | 11-20-2014 |
20140334164 | WIRING BOARD AND LIGHT EMITTING DEVICE USING SAME - A wiring board includes an insulated substrate, a wiring pattern and a folded part. The insulated substrate has an elongated shape with shorter sides extending along a width direction. The wiring pattern is provided on the substrate. The wiring pattern extends between both ends in the width direction of the substrate, and has an exposed part exposed at at least one of the ends of the substrate. In the folded part, the exposed part of the wiring pattern and the substrate are integrally folded up inwardly toward an upper face side of the substrate at each of the ends of the substrate. | 11-13-2014 |
20140334150 | LIGHT EMITTING DIODE TRAFFIC LIGHT - An LED (light emitting diode) traffic light includes a circuit board, a plurality of LEDs, and a masking plate. The masking plate has a plurality of through-holes. The masking plate is provided such that a back side of the masking plate faces a front side of the circuit board and the plurality of through-holes corresponds to the plurality of LEDs. The masking plate has a plurality of protruding ridges on a front side of the masking plate. Each of the plurality of protruding ridges has an upward facing inclined surface that slants downward at a first angle and a downward facing inclined surface that slants upward at a second angle larger than the first angle. The plurality of protruding ridges include a first ridge and a second ridge. The first angle of the first ridge is different from the first angle of the second ridge. | 11-13-2014 |
20140322844 | METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE - Provided is a method for manufacturing a light emitting device comprising a light emitting element and an optical part, the method comprising the steps of (i) forming a hydroxyl film on a bonding surface of each of the light emitting element and the optical part by an atomic layer deposition, and (ii) bonding the bonding surfaces of the light emitting element and the optical part with each other, each of the bonding surfaces having the hydroxyl film formed thereon, wherein a substep is repeated at least one time in the step (i), in which substep a first raw material gas and a second raw material gas are sequentially supplied onto the bonding surfaces of the light emitting element and the optical part, and wherein the bonding of the bonding surfaces in the step (ii) is performed without a heating treatment. | 10-30-2014 |
20140321491 | SEMICONDUCTOR LASER DEVICE AND MANUFACTURING METHOD THEREOF, AND SUBMOUNT MANUFACTURING METHOD - A semiconductor laser device can include an insulating single crystal SiC having a first surface, a second surface, and micropipes having openings in the first surface and the second surface. A conductive base can be provided on a side of the first surface of the single crystal SiC, and a semiconductor laser element can be provided on a side of the second surface of the single crystal SiC. An insulating member can be formed in the micropipes. | 10-30-2014 |
20140321099 | PHOSPHOR, LIGHT-EMITTING APPARATUS INCLUDING THE SAME, AND PHOSPHOR PRODUCTION METHOD - A phosphor is provided which is represented by the general formula M | 10-30-2014 |
20140319568 | PHOSPHOR, LIGHT-EMITTING APPARATUS INCLUDING THE SAME, AND PHOSPHOR PRODUCTION METHOD - A phosphor is provided which is represented by the general formula M | 10-30-2014 |
20140319567 | LIGHT EMITTING DEVICE - A provided light includes a semiconductor chip including a p-type semiconductor layer and an n-type semiconductor layer, the semiconductor chip being adapted to emit light between the p-type semiconductor layer and the n-type semiconductor layer; a p-side pad electrode disposed on an upper surface side of the semiconductor chip and over the p-type semiconductor layer; an n-side pad electrode disposed on an upper surface side of the semiconductor chip and over the n-type semiconductor layer; a resin layer disposed to cover the upper surface of the semiconductor chip; a p-side connection electrode and an n-side connection electrode disposed at an outer surface of the resin layer and positioned on the upper surface side of the semiconductor chip; and a metal wire disposed in the resin. The metal wire is adapted to make connection at least one of between the p-side pad electrode and the p-side connection electrode, and between the n-side pad electrode and the n-side connection electrode. | 10-30-2014 |
20140313715 | LIGHT SOURCE APPARATUS - A light source apparatus of the present invention has a plurality of semiconductor laser devices and a holding member; the semiconductor laser device includes: a semiconductor laser element; a placing body on which the semiconductor laser element is mounted; a substrate on which the placing body is biased to one side thereof; and a pair of terminals electrically connected to the semiconductor laser element, biased to the other side of the substrate and protruding from the substrate, and the holding member includes: holes aligned in at least a pair of rows; a thin-walled section on which the holes are arranged, the thin-walled section being formed by providing at least a pair of depressions on the other side; and a thick-walled section provided adjacent to the thin-walled section. The semiconductor laser device is mounted on one side of the holding member and the placing body of the semiconductor laser device is disposed on the thick-walled section, and the pair of terminals are exposed through the holes from the other side of the holding member. | 10-23-2014 |
20140312364 | PACKAGE FOR LIGHT EMITTING DEVICE, AND LIGHT EMITTING DEVICE - A package for a light emitting device includes: a resin portion having a sidewall thereof; a first lead having a reflective layer containing silver, the first lead being embedded in the resin portion such that the reflective layer is exposed inside the sidewall; and a second lead having at least a part of a surface thereof exposed inside the sidewall, the second lead being embedded in the resin portion while being isolated from the first lead, wherein in the first lead, the reflective layer is provided spaced inward apart from a boundary between the first lead and the resin portion, and wherein a separating surface exposed between the boundary and the reflective layer is formed of a surface of metal containing silver in a smaller amount than that of the reflective layer. | 10-23-2014 |
20140306245 | LIGHT EMITTING DEVICE - A light emitting device has: a first lead which is mounted a light emitting element, a second lead separated by an interval from the first lead, an insulating member configured to fix the first lead and the second lead, a wavelength conversion portion configured to cover the light emitting element, and a lens portion configured to cover the wavelength conversion portion, a thickness of the insulating member is equal to the thickness of the first lead and the second lead, a groove or a recessed portion is provided to retain the wavelength conversion portion in a specific region is formed in the first lead, and a lower surface of the first lead that forms an opposite side of a region formed on the wavelength conversion portion is not covered by the insulating member and is exposed to the outside. | 10-16-2014 |
20140294029 | NITRIDE SEMICONDUCTOR LASER ELEMENT - To realize a nitride semiconductor laser element having improved internal quantum efficiency. The nitride semiconductor laser element includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer between the n-type semiconductor layer and the p-type semiconductor layer; wherein the n-type semiconductor layer includes an n-side optical guide layer; wherein the active layer includes two or more well layers, and at least one barrier layer provided between the well layers; wherein the barrier layer includes a barrier layer having band gap energy higher than that of the n-side optical guide layer; wherein the p-type semiconductor layer includes: an electron barrier layer having band gap energy higher than that of all barrier layers included in the active layer, and a p-side optical guide layer provided between a final well layer, that is a well layer nearest to the p-type semiconductor layer of the two or more well layer, and the electron barrier layer; and wherein the p-side optical guide layer includes: a first region that is disposed on a side of the final well layer and has band gap energy lower than that of the n-side optical guide layer, and a second region that is disposed on a side of the electron barrier layer and has band gap energy higher than that of the n-side optical guide layer. | 10-02-2014 |
20140291716 | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided is a light emitting device with improved light extracting efficiency and further higher heat releasing performance. A light emitting device includes a planar lead frame having a first lead and a second lead, and includes a light emitting element mounted on the first lead, a resin frame surrounding a periphery of the light emitting element, a first sealing resin filled in the inner side of the resin frame and sealing the light emitting element, and a second sealing resin covering the resin frame and the first sealing resin. Lower end of inner surface of the resin frame is arranged only on the first lead, and at an outside of the resin frame, and the second resin member covers at least a part of the first lead and the second lead. Of the back-surface of the first lead, a region directly under the blight emitting element is exposed. | 10-02-2014 |
20140287557 | SEMICONDUCTOR DEVICE - In a semiconductor device including a semiconductor element and a wiring substrate on which the semiconductor element is mounted. The wiring substrate includes an insulating substrate and conductive wiring formed in the insulating substrate and electrically connected to the semiconductor element. The conductive wiring includes an underlying layer formed on the insulating substrate, a main conductive layer formed on the underlying layer, and an electrode layer covering side surfaces of the underlying layer and side surfaces and an upper surface of the main conductive layer. The underlying layer includes an adhesion layer being formed in contact with the insulating substrate and containing an alloy of Ti. | 09-25-2014 |
20140284652 | METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE, AND LIGHT EMITTING DEVICE - A method for manufacturing a light emitting device comprises a package preparation step of preparing a package having a recess in which a light emitting element is locatable, wherein the package includes a projection extending from an upper surface of the package, the projection at least partially surrounding the recess, a sealing resin forming step of filling said recess in which said light emitting element is located with a sealing resin, and providing said sealing resin higher than the height of said package, and a sealing resin cutting step of cutting the sealing resin such that an upper surface of the sealing resin is at a height that is substantially the same as a height of the upper surface of the package. | 09-25-2014 |
20140273289 | METHOD OF DETACHING SEALING MEMBER OF LIGHT EMITTING DEVICE - A method of detaching a sealing member of a light emitting device which has a substrate, a light emitting element mounted on the substrate and a sealing member that seals the light emitting element, wherein a release layer and/or an air layer is/are provided between the substrate and the sealing member; and the sealing member is detached from the substrate at the release layer and/or the air layer. | 09-18-2014 |
20140264426 | LIGHT EMITTING DEVICE MOUNT, LIGHT EMITTING APPARATUS INCLUDING THE SAME, AND LEADFRAME - A mount includes a terminal, and a resin portion. The terminal includes a first surface, a second surface, and an end surface having first and second recessed areas that are extend from the first and second surfaces, respectively. The resin portion is integrally formed with the terminal, and at least partially covers the end surface so that the first and second surfaces are at least partially exposed. The resin portion forms a recessed part to accommodate the light emitting device. The second recessed area includes a closest point that is positioned closest to the first surface, and an extension part that extends outward of the closest point and toward the second surface side. The extension part is formed at least on opposing end surfaces of the pair of positive and negative lead terminal. The first recessed area is arranged on the exterior side relative to the closest point. | 09-18-2014 |
20140254182 | LIGHT EMITTING DEVICE - A light emitting device which can prevent bending of the substrate member. The light emitting device includes a flexible substrate member, a plurality of light emitting elements, two first sealing members, and a second sealing member. The two first sealing members are disposed in-line on the substrate member and arranged in the longitudinal direction. The second sealing member is arranged extending in the longitudinal direction on the substrate member, and is offset in a lateral direction from the two first sealing members. The second sealing member is further arranged to extend across a first gap formed between the two first sealing members when viewed from a lateral direction, and overlap at least a portion of each of the two first sealing members. The second sealing member comprises a resin having transparency to light. | 09-11-2014 |
20140252582 | LEAD FRAME AND SEMICONDUCTOR DEVICE - A lead frame of high quality which can endure direct bonding to a semiconductor element, and a semiconductor device of high reliability which utilizing the lead frame. A lead frame includes a plurality of connected units, each unit including a pair of lead portions arranged spaced apart and opposite from each other, for mounting a semiconductor element and electrically connecting to a pair of electrodes of the semiconductor element respectively. The lead portions respectively include an element mounting region arranged on a surface thereof to mount the semiconductor element, and a groove extending from opposing end surfaces of each of the pair of lead portions, in a direction away from the end surfaces and bending in a surrounding manner along outer periphery of the element mounting region. | 09-11-2014 |
20140252574 | LEAD FRAME AND SEMICONDUCTOR DEVICE - A lead frame of high quality which can endure direct bonding to the electrodes of a semiconductor element and a metal member, and a semiconductor device of high reliability which utilizing the lead frame. The lead frame includes a pair of lead frame portions which are arranged spaced apart from and opposite to each other to be electrically connected to a pair of electrodes of a semiconductor element respectively, and a pair of support bars which are arranged spaced apart from the lead portions and extending from a side of either one of the lead portions to a side of the other lead portion. | 09-11-2014 |
20140252401 | LEAD FRAME AND LIGHT EMITTING DEVICE - A lead frame of high quality which can endure direct bonding to a light emitting element, and a light emitting device of high reliability which utilizing the lead frame. A lead frame includes a clad material which is a stacked layer of at least a first metal layer and a second metal layer, the second metal layer made of a metal which is different from the metal of the first metal layer, and a through portion. In the through-portion, an end surface of the first metal layer and an end surface of the second metal layer are covered with a plated layer. The end surface of either the first metal layer or the second metal layer protrudes farther into the through-portion than the end surface of the other metal layer. | 09-11-2014 |
20140247621 | LIGHT EMITTING DEVICE - To provide a light emitting device that makes it possible to form a surface light emitting apparatus of less unevenness in luminance. | 09-04-2014 |
20140239341 | SEMICONDUCTOR LIGHT EMITTING ELEMENT - The light emitting element including: a semiconductor laminate including a first layer, an active layer and a second layer; a first electrode including protrusions that penetrate the second layer and the active layer, the first electrode connected to the first layer via the protrusions; a second electrode connected to the second layer on an lower face of the second layer; and an insulation film between the protrusions and the semiconductor laminate, wherein the protrusions each include a protrusion body covered with the insulation film and a protrusion tip, an upper face and a side face of the protrusion tip being exposed from the insulation film, the first layer includes recesses arranged on an upper face of the first layer so as to sandwich first areas located above the respective the protrusions, and a distance between the recesses sandwiching the first area is larger than a width of the protrusion tip. | 08-28-2014 |
20140239332 | LIGHT EMITTING DEVICE AND LIGHTING DEVICE INCLUDING SAME - A light emitting device includes a base that has an element mounting surface, a light emitting element that is mounted on the element mounting surface and that has maximum light intensity in a directly upward direction, and a coating member that contains a fluorescent body that is excited by light from the light emitting element, and that is constituted by a single layer that coats an upper part of the light emitting element. The fluorescent body exists at a position other than directly above the light emitting element. | 08-28-2014 |
20140239331 | LIGHT EMITTING DEVICE, LIGHT EMITTING ELEMENT MOUNTING METHOD, AND LIGHT EMITTING ELEMENT MOUNTER - Disclosed is a light emitting device including: a light emitting element including an LED chip and a phosphor layer provided at the light emitting side of the LED chip; and a substrate on which the light emitting element is bonded by an adhesive material. The adhesive material is an anisotropic conductive material. | 08-28-2014 |
20140239320 | LIGHT EMITTING APPARATUS AND PRODUCTION METHOD THEREOF - A light emitting apparatus comprises an electrically insulating base member; a pair of electrically conductive pattern portions formed on an upper surface of the base member; at least one light emitting device that is electrically connected to the pair of electrically conductive pattern portions; and a resin portion that surrounds at least a side surface of the at least one light emitting device and partially covers the pair of electrically conductive pattern portions. Each of the pair of electrically conductive pattern portions extends toward a periphery of the base member from resin-covered parts of the electrically conductive pattern portions. At least the resin-covered parts of each of the electrically conductive pattern portions has at least one elongated through hole extending in a direction in which the electrically conductive pattern portions extend from the resin-covered parts, wherein the resin portion contacts the base member via the through holes. | 08-28-2014 |
20140239318 | LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - The light emitting device including: a flexible substrate having a negative lead electrode and a positive lead electrode formed on an upper surface thereof; a light emitting element having a negative electrode and a positive electrode formed on an upper surface thereof; an insulating film formed on a side surface of the light emitting element; a wiring formed in contact with the insulating film for connecting between the negative electrode and the negative lead electrode, or between the positive electrode and the positive lead electrode. | 08-28-2014 |
20140234994 | INSPECTION METHOD FOR SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD FOR SEMICONDUCTOR LIGHT-EMITTING DEVICE - An inspection method for a semiconductor light-emitting device includes an image capturing step for capturing an image of photoluminescence released from the active layer, an inspection region extracting step for extracting an inspection region from the captured image; a luminance average determination step for, determining the semiconductor light emitting device as defective when a luminance average is smaller than a predetermined threshold, a luminance variance determination step for determining the semiconductor light emitting device as defective when a luminance variance is larger than a predetermined threshold, a color determination step for determining the semiconductor light-emitting device as defective when a pixel in which a color component indicating a photoluminescence intensity of light released from the active layer and having a wavelength shorter than the original emitting wavelength, and a total determination step for totally determining the semiconductor light-emitting device as defective when determined in at least one of these determination results within the inspection region. | 08-21-2014 |
20140231835 | STACKED ASSEMBLY OF LIGHT EMITTING DEVICES - A stacked assembly of light emitting devices includes a first light emitting device, a second light emitting device and a sealing member. The first light emitting device includes a first substrate member extending in a longitudinal direction and defining a plurality of through-holes, and a plurality of first light emitting elements arranged on the first substrate member. The second light emitting device is arranged to overlap with the first light emitting device. The second light emitting device includes a second substrate member extending in the longitudinal direction, and a plurality of second light emitting elements arranged on the second substrate and exposed respectively through the through-holes. The sealing member seals the first light emitting elements and the second light emitting elements. | 08-21-2014 |
20140217558 | SEMICONDUCTOR ELEMENT - A semiconductor element includes a substrate and a semiconductor layer. The substrate has a first main face and a second main face. The semiconductor layer is formed on a side of one of the first main face and the second main face of the substrate. The substrate has a plurality of isolated processed portions and an irregularity face that runs from the processed portions at least to the first main face of the substrate and links adjacent ones of the processed portions. | 08-07-2014 |
20140210995 | INSPECTION METHOD FOR SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD FOR SEMICONDUCTOR LIGHT-EMITTING DEVICE - An inspection method for a semiconductor light-emitting device includes an image capturing step for irradiating light to the semiconductor light emitting device so as to excite an active layer and capturing an image of photoluminescence released from the active layer, an inspection region extracting step for extracting an inspection region of the captured image, a luminance average determination step for, determining as defective when a luminance average is smaller than a predetermined threshold, a luminance variance determination step for determining as defective when a luminance variance is larger than a predetermined threshold, and a total determination step for totally determining the semiconductor light-emitting device as defective when determined the semiconductor light emitting device as defective in at least one of the two determination results. | 07-31-2014 |
20140209953 | SUPPORTING MEMBER AND LIGHT EMITTING DEVICE USING THE SUPPORTING MEMBER - A light emitting device includes a support member having a mounting surface. The support member includes an insulating member having top surface and a plurality of side surfaces, a first metal pattern disposed on the top surface of the insulating member, and a second metal pattern disposed on the side surface of the insulating member such that a side surface of the second metal pattern is continuous with a top surface of the first metal pattern. The light emitting device further includes a light emitting element mounted on the mounting surface at a location of the first metal pattern, and a bonding member that bonds the light emitting element to the mounting surface. The bonding member covers at least a portion of the first metal pattern and at least a portion of the second metal pattern. | 07-31-2014 |
20140209938 | SEMICONDUCTOR LIGHT EMITTING ELEMENT - A semiconductor light emitting element includes: an insulating substrate having a plurality of convex portions on a surface thereof; a plurality of light emitting element components having semiconductor laminated bodies that are laminated on the insulating substrate and are separated from one another by a groove that exposes the convex portions; and a connector connecting between the light emitting element components. The light emitting element components include a first light emitting element component and a second light emitting element component. The first light emitting element component is separated from the second light emitting element component with the groove in between, and has a first protrusion that protrudes toward the second light emitting element component. The connector includes a first connector having a shape that straddles the groove and that follows the convex portions, and has a straight section. | 07-31-2014 |
20140203305 | LIGHT EMITTING DEVICE AND ITS METHOD OF MANUFACTURE - The light emitting device is provided with a substrate, semiconductor light emitting elements mounted on the substrate, a mold frame that surrounds the periphery of the light emitting elements on the substrate, and resin layers that fill the inside of the mold frame. The mold frame includes a first mold frame, and a second mold frame formed on top of the first mold frame. The resin layers include a first resin layer that embeds the light emitting elements in resin and is formed with a height approximately equal to the height of the top of the first mold frame, and a second resin layer on top of the first resin layer that is formed with a height approximately equal to the height of the top of the second mold frame. At least one of the resin layers (which are the first resin layer and the second resin layer) includes wavelength-shifting material to change the wavelength of light emitted from the semiconductor light emitting elements. | 07-24-2014 |
20140203242 | NITRIDE SEMICONDUCTOR DEVICE - In the nitride semiconductor device of the present invention, an active layer | 07-24-2014 |
20140191278 | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE LIGHT EMITTING DEVICE - A light emitting device includes a base body forming a recess defined by a bottom surface and a side wall thereof, a conductive member whose upper surface being exposed in the recess and whose lower surface forming an outer surface, a protruding portion disposed in the recess, a light emitting element mounted in the recess and electrically connected to the conductive member, and a sealing member disposed in the recess to cover the light emitting element. The base body has a bottom portion and a side wall portion integrally formed of a resin, an inner surface of the side wall portion is the side wall defining the recess and has a curved portion, and the protruding portion is disposed in close vicinity to the curved surface. With this arrangement, a thin and small-sized light emitting device excellent in light extraction efficiency and reliability can be obtained. | 07-10-2014 |
20140186980 | METHOD OF MANUFACTURING LIGHT EMITTING DEVICE AND SPRAY COATING MACHINE - A method of manufacturing a light emitting device, using a spray coating method, a fluorescent material can be easily adhered on corner portions and side surfaces of an LED chip, a lens-shaped light transmissive resin member surface, an optical lens surface, etc., and a spray coating machine used in the method. The method includes mounting an LED chip on a substrate member, applying a spray coating to a coating object including the LED chip by spraying a powder-containing solution. The applying a spray coating is performed such that a powder-containing solution is sprayed through a solution nozzle arranged above the coating object, as a spray direction of the powder-containing solution indicating a central axis, while using at least one gas nozzle arranged in a surrounding relationship to the central axis, spraying a gas toward the central axis to alter the direction of the spray made of the powder-containing solution. | 07-03-2014 |
20140185296 | LIGHT EMITTING DEVICE - A light emitting device with good handling performance for storage, transportation, or in use, which can prevent stress from concentrating on the light emitting elements. The substrate member includes a first end portion, a middle portion, and a second end portion. The first end portion defines a locking hole for insertion of a locking bar. A plurality of light emitting elements are disposed on the middle portion. On the second end portion, an electronic member such as a Zener Diode, a Bridge Diode, a connector, a fuse, a resistance etc., is disposed. | 07-03-2014 |
20140185294 | LIGHT EMITTING DEVICE - In a light emitting device, one of at least one reinforcing portion is disposed on a site for joining regions of two wiring portions. The site for joining regions is provided for at least a first joining region where the first groove portion and the third groove portion join, and a second joining region where the second groove portion and the third groove portion join. A light emitting element is disposed over the third groove portion. In a plan view of the substrate member, the reinforcing portion surrounds the light emitting element. The upper surface of the reinforcing portion is lower than the upper surface of the light emitting element. | 07-03-2014 |
20140183575 | LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - The light-emitting device has a plurality of light-emitting elements that is mounted on one or more wiring patterns on a substrate. A new light-emitting element that replaces a defective element is mounted on the same wiring pattern on which the defective element is mounted. The defective element or a trace that remains after removal of the defective element is sealed by a same sealing member by which the new light-emitting element is sealed. | 07-03-2014 |
20140183574 | LIGHT EMITTING DEVICE PACKAGE, LIGHT EMITTING DEVICE USING THAT PACKAGE, AND ILLUMINATION DEVICE USING THE LIGHT EMITTING DEVICES - The light emitting device package of the present invention has a longitudinal direction (as viewed from above) and a transverse direction perpendicular to the longitudinal direction, and is provided with a first and second lead-frame lined-up in the longitudinal direction and molded resin holds the first and second lead-frames integrally. The package is characterized in that the first lead-frame has a main body and an extension that extends from the main body with a narrowed width towards the second lead-frame. Further, a recess is established in the bottom surface of the first lead-frame, and at least part of the exposed region of the bottom surface of the extension is separated from the exposed region of the bottom surface of the main body by the molded resin that fills the recess. | 07-03-2014 |
20140183564 | LIGHT EMITTING ELEMENT - A light emitting element includes a first conductivity-type semiconductor layer, a first electrode, a second conductivity-type semiconductor layer and a second electrode. The second conductivity-type semiconductor layer has a square peripheral shape. The first electrode includes a first connecting portion on a first diagonal line and a first extending portion extending from the first connecting portion onto the first diagonal line. The second electrode includes a second connecting portion on the first diagonal line facing the first connecting portion via the first extending portion. Two second extending portions extend from the second connecting portion and having a first portion and a second portion respectively. The first connecting portion includes an end portion closer to the second connecting portion than a straight line intersecting the tip ends of the two second extending portions, and a center portion at a side father from the second connecting portion than the second diagonal line. | 07-03-2014 |
20140177220 | LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - A light-emitting device includes a first substrate having a through-hole, a plurality of first light-emitting elements that are arranged on the first substrate, a second substrate that is attached to the first substrate to cover the through-hole of the first substrate, and a second light-emitting element arranged on the second substrate, and electrically connected to wiring of the first substrate. | 06-26-2014 |
20140175595 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - The present invention relates to a semiconductor device, including: a substrate; a plurality of first semiconductor elements and a second semiconductor element arranged on a mount area of the substrate; an external electrode to supply electricity to the first and second semiconductor elements; and a frame of reflective material formed at a periphery of the mount area. Extensions of the first external electrodes are formed at the inner side of the plurality of wirings, and the first external electrodes are formed along the periphery of the mount area at the outer side of at least one of the second external electrodes or the wiring connected to the second external electrodes, and electrodes of the plurality of first semiconductor elements are electrically connected to the pair of first external electrodes by a bonding wire that bridges across at least one of the pair of the second external electrodes or the wiring electrically connected to the pair of second external electrodes with intervening a part of the frame therebetween. | 06-26-2014 |
20140175491 | LIGHT EMITTING DEVICE - The light emitting device comprising a light emitting element; and a wavelength converting member having a first face and a second face, in which light emitted from the light emitting element enters in through the first face, and a part of the second face serves as a light emitting face, wherein the light emitting element further comprises a reflection control structure around the light emitting face of the second face, and the reflection control structure comprises a reflection film on the wavelength converting member and an anti-reflection film on the reflection film. | 06-26-2014 |
20140175455 | FIELD-EFFECT TRANSISTOR - The field-effect transistor comprising: a semiconductor laminated structure comprising a first layer of a first nitride semiconductor, a second layer of a second nitride semiconductor having a bandgap larger than that of the first nitride semiconductor, and a two-dimensional electron gas layer; a source electrode; a drain electrode; and a gate electrode disposed over the second layer, the gate electrode being adapted to control the flow of electrons passing through the two-dimensional electron gas layer; a third layer of a p-type nitride semiconductor containing p-type dopant between the gate electrode and the second layer; and a fourth layer of a nitride semiconductor between the third layer and the gate electrode, wherein the fourth layer is in contact with the gate electrode, and wherein the fourth layer is an undoped layer which has a larger bandgap than that of the third layer. | 06-26-2014 |
20140166980 | SEMICONDUCTOR LIGHT EMITTING ELEMENT - A semiconductor light emitting element includes an n-side semiconductor layer, an active layer, and a p-side semiconductor layer stacked in this order on a substrate. The active layer includes a multiple quantum well structure which includes a plurality of barrier layers and a plurality of well layers adjacent to the barrier layers. Among the barrier layers, a final barrier layer disposed closest to the p-side semiconductor layer and one or more barrier layers adjacent to the final barrier layer via the well layers respectively has a greater thickness than a thickness of a barrier layer on a side close to the n-side semiconductor layer. | 06-19-2014 |
20140161145 | SEMICONDUCTOR LASER ELEMENT - A semiconductor laser element includes: a light emitting layer of a nitride semiconductor that is placed above a substrate of GaN and has a refractive index higher than the substrate, wherein the semiconductor laser element further includes the following layers between the substrate and the light emitting layer in an order from the substrate: a first nitride semiconductor layer of AlGaN; a second nitride semiconductor layer of AlGaN having an Al ratio higher than the first nitride semiconductor layer; a third nitride semiconductor layer of an InGaN; and a fourth nitride semiconductor layer of AlGaN having an Al ratio higher than the first nitride semiconductor layer and having a thickness greater than the second nitride semiconductor layer. | 06-12-2014 |
20140160759 | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING LIGHT EMITTING DEVICE AND OPTICAL COMPONENT USED IN THE SAME - A light emitting device wherein discoloration of a reflective layer in an optical component can be prevented and a stable optical output power can be maintained, and a method of manufacturing an optical component used in the light emitting device. The optical component includes a supporting member defining a through-hole, a reflective layer formed on an inner wall defining the through-hole, a protective layer formed on the reflective layer, and a light transmissive member having a light incident surface, a light emitting surface, and an outer circumference side-surface, and disposed in the through hole. The light transmissive member is fixed in the through-hole with a joining portion where the outer circumference side-surface and the protective layer are joined, and an end portion at the light emitting side of the joining portion is covered with a second protective layer disposed continuously on the protective layer and the light transmissive member. | 06-12-2014 |
20140160714 | COMPONENT MOUNTING SUBSTRATE AND METHOD OF MANAGING COMPONENT MOUNTING SUBSTRATE - Provided is a method of managing a component mounting substrate that can be used in a roll-to-roll process, without breaking or deteriorating electronic components mounted thereon. In the method of winding, around a core, a flexible component mounting substrate on which a plurality of electronic components are mounted and managing the component mounting substrate as a roll, the roll is held such that the core of the roll is parallel to a vertical direction. | 06-12-2014 |
20140151737 | LIGHT EMITTING DEVICE - A light emitting device includes an electrically conductive member provided with a reflective film; a light emitting element mounted on the reflective film; and a protective film continuously covering a surface of the light emitting element and a surface of the reflective film. A thickness of the protective film on the reflective film in a vicinity of the light emitting element is substantially equal to a thickness of the protective film on the reflective film in the region except for the vicinity of the light emitting element. | 06-05-2014 |
20140141550 | SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREFOR - An object of the invention is to provide a method for producing a conductive member having low electrical resistance, and the conductive member is obtained using a low-cost stable conductive material composition that does not contain an adhesive. A method for producing a semiconductor device in which silver or silver oxide provided on a surface of a base and silver or silver oxide provided on a surface of a semiconductor element are bonded, includes the steps of arranging a semiconductor element on a base such that silver or silver oxide provided on a surface of the semiconductor element is in contact with silver or silver oxide provided on a surface of the base, and bonding the semiconductor element and the base by applying heat having a temperature of 200 to 900° C. to the semiconductor device and the base. | 05-22-2014 |
20140140362 | SEMICONDUCTOR LASER ELEMENT - To provide a ridge-type semiconductor laser element capable of preventing inclination at the time of junction-down bonding and having high heat dissipation, in a semiconductor laser element including a substrate, a semiconductor portion disposed on the substrate and having a ridge on a surface at an opposite side from the substrate, an electrode disposed on a ridge, an insulating layer disposed on the semiconductor portion at the both sides of the ridge and a pad electrode disposed on the electrode, in which, the pad electrode side is a mounting surface side, the pad electrode is disposed extending on the insulating layer, and a spacer is disposed between the semiconductor portion and the pad electrode at parts spaced apart from the ridge. | 05-22-2014 |
20140140079 | LIGHT EMITTING DEVICE - A light emitting device includes a substrate member and at least one light emitting element. The substrate member has a groove portion defined between two wiring portions spaced apart from each other. The groove portion includes a first groove portion, a second groove portion, and a third groove portion. The first groove portion extends in a direction that forms a slanted angle with respect to a first direction, the second groove portion is spaced apart from the first groove and extends in a direction that forms a slanted angle with respect to the first direction, and the third groove portion is interconnected with the first groove portion and the second groove portion. The light emitting element is disposed over the third groove portion. | 05-22-2014 |
20140133151 | LIGHT EMITTING DEVICE - A light emitting device includes a flexible substrate member having a base member and a plurality of wiring portions disposed on a surface of the base member, a plurality of light emitting elements arranged on the surface of the base member and electrically connected to the plurality of wiring portions, and a plurality of sealing members sealing corresponding parts of the substrate member and the light emitting elements respectively. The substrate is curved so that at least a part of periphery of the sealing member is arranged at a position lower than the position on which the light emitting element is disposed. | 05-15-2014 |
20140132492 | DISPLAY APPARATUS AND METHOD FOR CONTROLLING DISPLAY APPARATUS - A display device includes a plurality of common lines, a plurality of drive lines, a plurality of light emitting elements, a source driver, and a sink driver. At least one charging device is connected to at least one of the common lines and configured to increase a voltage of the common lines to a predetermined value when the voltage of the common lines is lower than the predetermined value during a period while the source driver does not apply the voltage. At least one discharging device is connected to at least one of the plurality of common lines and configured to decrease the voltage of the common lines to the predetermined value when the voltage of the common lines is higher than the predetermined value during the period while the source driver does not apply the voltage. | 05-15-2014 |
20140131753 | METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE - A manufacturing method of a light emitting device includes a light emitting element disposed over a substrate and a reflective resin disposed along the side surface of the light emitting element. The method includes disposing light emitting elements in a matrix over an aggregate substrate, and disposing a semiconductor element between the adjacent light emitting elements in one direction of column and row directions of the light emitting elements in the matrix. A reflective resin is disposed to cover the semiconductor elements along the side surfaces of the light emitting elements and the side surfaces of the phosphor layers. The reflective resin and the substrate disposed in between the adjacent light emitting elements is cut in the column or row direction and between the light emitting element and the adjacent semiconductor element in the other direction, to include a light emitting element or a semiconductor element. | 05-15-2014 |
20140124821 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT - A semiconductor light-emitting element capable of increasing a strength of adhesion between an electrode and a protection film. | 05-08-2014 |
20140124812 | LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - To provide a light emitting device having high light extraction efficiency, and a method for manufacturing the light emitting device. A method for manufacturing a light emitting device ( | 05-08-2014 |
20140124805 | METHOD FOR MANUFACTURING SUBSTRATE FOR SEMICONDUCTOR LIGHT EMITTING ELEMENT AND SEMICONDUCTOR LIGHT EMITTING ELEMENT USING THE SAME - A light emitting element having a recess-protrusion structure on a substrate is provided. A semiconductor light emitting element | 05-08-2014 |
20140117403 | LIGHT EMITTING DEVICE PACKAGE AND LIGHT EMITTING DEVICE - The light emitting device package has a lengthwise direction as viewed from above and a lateral or widthwise direction perpendicular to the lengthwise direction, and is provided with two lead-frames lined-up in the lengthwise direction and molded resin formed as a single unit with the two lead-frames. The package is characterized in that each of the two lead-frames has a first thin region that is thinned by establishing a recess in the lower surface and/or the upper surface of the lead-frame, and that recess is covered with molded resin. Further, each lead-frame has an extension that narrows as it extends towards the opposite lead-frame. Both extensions are entirely within first thin regions, and as viewed from above, at least parts of the opposing extensions are positioned opposite each other in the lateral direction. | 05-01-2014 |
20140110740 | SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREFOR - An object of the invention is to provide a method for producing a conductive member having low electrical resistance, and the conductive member is obtained using a low-cost stable conductive material composition that does not contain an adhesive. A method for producing a semiconductor device in which silver or silver oxide provided on a surface of a base and silver or silver oxide provided on a surface of a semiconductor element are bonded, includes the steps of arranging a semiconductor element on a base such that silver or silver oxide provided on a surface of the semiconductor element is in contact with silver or silver oxide provided on a surface of the base, temporarily bonding the semiconductor element and the base by applying a pressure or an ultrasonic vibration to the semiconductor element or the base, and permanently bonding the semiconductor element and the base by applying heat having a temperature of 150 to 900° C. to the semiconductor device and the base. | 04-24-2014 |
20140110737 | LIGHT EMITTING ELEMENT - To provide a semiconductor light emitting element with high luminous efficiency, the light emitting element includes: a substrate; a semiconductor laminate placed above the substrate, the semiconductor laminate comprising a second semiconductor layer, an active layer and a first semiconductor layer laminated in this order from the substrate; and a first electrode and a second electrode placed between the substrate and the semiconductor laminate, wherein the semiconductor laminate is divided in a plurality of semiconductor blocks by a groove, wherein the first electrode includes protrusions that are provided in each of the plurality of semiconductor blocks and that penetrate the second semiconductor layer and the active layer to be connected to the first semiconductor layer, and wherein the second electrode is connected to the second semiconductor layer in each of the plurality of semiconductor blocks and has an external connector that is exposed on the bottom of the groove. | 04-24-2014 |
20140103383 | LIGHT EMITTING DEVICE - A light emitting device is provided with a base member, an interconnect pattern disposed on an upper surface of the base member, a light reflecting layer comprising a first layer disposed on a part of the interconnect pattern and formed from a metal material, and a second layer made of a dielectric multilayer reflecting film made with stacked layers of dielectric films having different refractive indices and covering an upper surface and side surfaces of the first layer, a light emitting element chip fixed so as to face at least a part of the light reflecting layer, and a light transmissive sealing member sealing the light reflecting layer and the light emitting element chip. | 04-17-2014 |
20140103379 | SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - The invention provides semiconductor light-emitting devices which have a semiconductor layer on a principal surface of a translucent substrate and a reflective layer on a second principal surface opposite to the principal surface having the semiconductor layer, which enables that the peeling of the reflective layer from the translucent substrate is suppressed. A semiconductor light-emitting device includes a first metal layer disposed in contact with a second principal surface of a translucent substrate, a second metal layer disposed in contact with at least the second principal surface or a side surface of the translucent substrate around the first metal layer, and a third metal layer disposed on the second metal layer. The first metal layer has a reflectance with respect to a peak wavelength of light emitted from an emitting layer higher than the reflectance of the second metal layer. The second metal layer has an adhesion with respect to the translucent substrate higher than the adhesion between the first metal layer and the translucent substrate. | 04-17-2014 |
20140097462 | SEMICONDUCTOR LIGHT-EMITTING APPARATUS AND METHOD OF FABRICATING THE SAME - A light-emitting apparatus has a light-emitting device and a supporting board. The light-emitting device has a pair of n-electrodes with a p-electrode therebetween, on the same plane. The supporting board includes an insulating substrate on which positive and negative electrodes are formed, opposing to the p- and n-electrodes of the light-emitting device, respectively. Bonding members bond the p- and n-electrodes with the positive and negative electrodes, respectively. The positive electrode on the supporting board is formed within the width region of the p-electrode and narrower in width than the width of the p-electrode, in a cross-section along a line extending through the pair of n-electrodes. The negative electrodes oppose to the n-electrodes, respectively, with the same widths, or with that side face of each of the negative electrodes which faces the positive electrode being retracted outwardly from that side face of each of the n-electrodes which faces the p-electrode. | 04-10-2014 |
20140092597 | LIGHT EMITTING DEVICE - A light emitting device includes a substrate member having a flexible base member, a plurality of wiring portions disposed on the base member, and a covering layer covering the wiring portions and having openings exposing a part of wiring portions, a plurality of light emitting elements electrically connected to the wiring portions, and a plurality of sealing members sealing the plurality of light emitting elements, respectively. The light emitting device has a weight of 1 g/cm | 04-03-2014 |
20140091356 | LIGHT EMITTING DEVICE - A light emitting device includes a package constituted by a molded article having a light emitting face, a bottom face, and a rear face, and a pair of leads partially embedded in the molded article, protrude from the bottom face, and have ends that bend toward either the light emitting face or the rear face. The molded article has a front protruding part that protrudes from the bottom face and includes a surface continuous with the light emitting face, the front protruding part being spaced apart from the rear face, and a rear protruding part that protrudes from the bottom face and includes a surface continuous with the rear face, the rear protruding part being spaced apart from the light emitting face, between the leads on the bottom face, the front protruding part being spaced apart from the rear protruding part. | 04-03-2014 |
20140091335 | LIGHT EMITTING DEVICE - To provide a light emitting device that can maintain a desired light emission even when the tube is bent. | 04-03-2014 |
20140091333 | LIGHT EMITTING DEVICE EQUIPPED WITH PROTECTIVE MEMBER - A light emitting device includes a light emitting device body and a protective member. The light emitting device body has a flexible base member, at least one light emitting element arranged on the base member, and a sealing resin member sealing the light emitting element. The protective member is disposed adjacent to the sealing resin member on the base member. The protective member has a height greater than a height of the sealing resin member. | 04-03-2014 |
20140085885 | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING COVER USED IN THE SAME - An object of the present invention is to preventing the propagation of light to improve the display quality of the light emitting device. A light emitting device according to an embodiment has a case, a base member disposed at a front side of the case, a plurality of light emitting elements mounted at the front side of the base member, and a cover covering the light emitting elements. The cover has a light transmissive member integrally covering the plurality of light emitting elements, and a light-blocking member disposed at a front side of the light transmissive member and having openings anterior to the light emitting elements respectively. Further, the light transmissive member has, on its back surface, a back-side rough surface portion in a region different from the region facing the front surfaces of the light emitting elements. | 03-27-2014 |
20140084781 | LIGHT EMITTING DEVICE - A light emitting device includes a substrate including a base member, a plurality of wiring portions disposed on a surface of the base member, a covering portion having openings respectively exposing a part of the wiring portions, a plurality of light emitting elements respectively electrically connected to the wiring portions exposed from the covering portion, and sealing members respectively sealing the light emitting elements. At least a part of the covering portion contains a light-storing material. | 03-27-2014 |
20140084323 | LIGHT EMITTING DEVICE AND DISPLAY COMPRISING A PLURALITY OF LIGHT EMITTING COMPONENTS ON MOUNT - A light emitting device containing a semiconductor light emitting component and a phosphor, the phosphor is capable of absorbing a part of light emitted by the light emitting component and emitting light of a wavelength different from that of the absorbed light, is provided. A straight line connecting a point of chromaticity corresponding to a spectrum generated by the light emitting component and a point of chromaticity corresponding to a spectrum generated by the phosphor is substantially along a black body radiation locus in a chromaticity diagram. | 03-27-2014 |
20140084320 | LIGHT EMITTING DEVICE, RESIN PACKAGE, RESIN-MOLDED BODY, AND METHODS FOR MANUFACTURING LIGHT EMITTING DEVICE, RESIN PACKAGE AND RESIN-MOLDED BODY - A method of manufacturing a light emitting device having a resin package which provides an optical reflectivity equal to or more than 70% at a wavelength between 350 nm and 800 nm after thermal curing, and in which a resin part and a lead are formed in a substantially same plane in an outer side surface, includes a step of sandwiching a lead frame provided with a notch part, by means of an upper mold and a lower mold, a step of transfer-molding a thermosetting resin containing a light reflecting material in a mold sandwiched by the upper mold and the lower mold to form a resin-molded body in the lead frame and a step of cutting the resin-molded body and the lead frame along the notch part. | 03-27-2014 |
20140077236 | LIGHT EMITTING DEVICE - A light emitting device includes a flexible substrate including a flexible base member and a plurality of wiring portions disposed on one surface of the base member, at least one light emitting element arranged on a first surface of the flexible substrate and electrically connected to the respective wiring portions, a sealing resin sealing the light emitting element, and an adhesion layer arranged on a second surface of the flexible substrate. The adhesion layer has a portion corresponding at least to a region on the first surface where the at least one light emitting element is arranged. The portion has a thickness smaller than a thickness of regions other than the portion. | 03-20-2014 |
20140077157 | NITRIDE SEMICONDUCTOR DEVICE - A nitride semiconductor device used chiefly as an LD and an LED element. In order to improve the output and to decrease Vf, the device is given either a three-layer structure in which a nitride semiconductor layer doped with n-type impurities serving as an n-type contact layer where an n-electrode is formed is sandwiched between undoped nitride semiconductor layers; or a superlattice structure of nitride. The n-type contact layer has a carrier concentration exceeding 3×10 | 03-20-2014 |
20140070262 | LIGHT EMITTING DEVICE - A light emitting device includes a package equipped on a front face with a window for installing a light emitting element, and outer lead electrodes. The package has a back face opposed to the front face and a bottom face that is located between the back face and the front face. The bottom face is adjacent to the front face. The outer lead electrodes protrude from the bottom face of the package. An end of each of the outer lead electrodes branches in at least two distal end parts on the bottom face. One of the distal end parts of each of the outer lead electrodes extends toward one of side faces of the package and is bent along the side face, and other one of the distal end parts of each of the outer lead electrodes extends toward the back face of the package. | 03-13-2014 |
20140061704 | LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a light emitting device comprises (a) preparing a structure including a substrate, a semiconductor layer formed on the substrate, and a p-side electrode and an n-side electrode formed on the semiconductor layer; (b) preparing a support member including a p-side wiring and an n-side wiring on the same surface thereof; (c) electrically connecting the p-side electrode and the n-side electrode of the structure to the p-side wiring and the n-side wiring of the support member, respectively, using an anisotropic conductive material containing conductive particles and a first resin; and after step (c), (d) removing the substrate from the structure. | 03-06-2014 |
20140061684 | LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A light-emitting device may comprise a substrate, an electric wire fixed to the substrate, and a plurality of light-emitting diodes mounted to the electric wire. According to one embodiment, each of the plurality of light-emitting diodes is an LED chip, and the light-emitting diodes on the substrate are sealed individually or collectively by one or more sealing members. According to another embodiment, the substrate has a plurality of through holes, wherein a plurality of portions of the electric wire provided on a rear surface side of the substrate communicates with a front surface side of the substrate at the plurality of through holes of the substrate, and wherein the plurality of light-emitting diodes is respectively mounted to the respective portions of the electric wire that communicate with the front surface side of the substrate. Other embodiments relate to methods of manufacturing a light-emitting device. | 03-06-2014 |
20140048834 | METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE - A method for manufacturing a light emitting device that comprises a light emitting element and a phosphor layer to absorb at least a part of light emitted from the light emitting element to emit a light having a different wavelength from that of the absorbed light comprises a first resin layer forming step of forming a first resin layer with a first resin in which viscosity is adjusted to a first viscosity on a light emitting face of the light emitting element to define a predetermined shape of the phosphor layer; a second resin layer forming step of forming a second resin layer with a second resin containing a phosphor in which viscosity is adjusted to a second viscosity lower than the first viscosity on the first resin layer before curing the first resin layer; and a curing step of curing the first resin layer and the second resin layer. | 02-20-2014 |
20140042897 | LIGHT EMITTING DEVICE - A light emitting device includes a substrate, a light emitting element, a first resin member and a second resin member. The substrate includes a base member, a plurality of wiring portions disposed on a surface of the base member, and a covering layer covering the wiring portions with an opening formed in a part of the covering layer. The light emitting element is arranged on the substrate in the opening of the covering layer and having an upper surface at a position higher than the covering layer. The first resin member is arranged at least in the opening of the covering layer and at periphery of the light emitting element. The second resin member seals the substrate and the light emitting element. The second resin member is disposed in contact with the first resin member. | 02-13-2014 |
20140042488 | OPTICAL-SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing an optical-semiconductor device, including forming a plurality of first and second electrically conductive members that are disposed separately from each other on a support substrate; providing a base member formed from a light blocking resin between the first and second electrically conductive members; mounting an optical-semiconductor element on the first and/or second electrically conductive member; covering the optical-semiconductor element by a sealing member formed from a translucent resin; and obtaining individual optical-semiconductor devices after removing the support substrate. | 02-13-2014 |
20140038328 | Method for manufacturing semiconductor light emitting device - A semiconductor light emitting device having high reliability and excellent light distribution characteristics can be provided with an n-electrode arranged on a light extraction surface on the side opposite to the surface whereupon a semiconductor stack is mounted on a substrate. A plurality of convexes are arranged on a first convex region and a second convex region on the light extraction surface. The second convex region adjoins the interface between the n-electrode and the semiconductor stack, between the first convex region and the n-electrode. The base end of the first convex arranged in the first convex region is positioned closer to a light emitting layer than the interface between the n-electrode and the semiconductor stack, and the base end of the second convex arranged in the second convex region is positioned closer to the interface between the n-electrode and the semiconductor stack than the base end of the first convex. | 02-06-2014 |
20140038325 | LIGHT-EMITTING DEVICE MANUFACTURING METHOD - A method for manufacturing a light-emitting device comprises retaining a conductor wire so that a straight-line distance between adjacent mounting portions while the conductor is retained is less than a distance along the conductor wire between the adjacent mounting portions; mounting a plurality of light emitting diodes to respective ones of the mounting portions on the retained conductor wire; and after the mounting step, sealing the plurality of light-emitting diodes mounted on the conductor wire. | 02-06-2014 |
20140034992 | SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME | 02-06-2014 |
20140034973 | LIGHT-EMITTING DEVICE - A light-emitting device including: a base; light-emitting elements arranged on the base at intervals in an array along a predetermined direction of the base; and conductive-wiring parts formed on first and second sides of the array of the light-emitting elements on the base. The conductive-wiring parts are discretely formed along the predetermined direction of the base, each of the conductive-wiring parts relaying electricalconnection between the light-emitting elements, and the number of the conductive-wiring parts arranged per light-emitting element on each of the first and second sides of the array of the light-emitting elements is two or more. | 02-06-2014 |
20140027804 | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - To provide a method of manufacturing at low cost a light emitting device that converts the wavelength of light radiated by a light emitting element and emits, the method includes: forming a phosphor layer on a translucent substrate; arranging a plurality of light emitting elements with a predetermined spacing, the light emitting elements having an electrode formed face provided with positive and negative electrodes respectively and arranged with the electrode formed faces on the top; embedding a resin containing phosphor particles so that an upper face of the embedded resin does not bulge over a plane containing the electrode formed faces; and curing the resin, and then cutting and dividing the cured resin, the phosphor layer and the translucent substrate into a plurality of light emitting devices each including one or more of the light emitting elements. | 01-30-2014 |
20140027794 | LIGHT EMITTING DEVICE FOR LINEAR LIGHT SOURCE - A light emitting device includes: a substrate; a first metal film formed on the substrate; quadrilateral light emitting elements arranged in a line at an interval d | 01-30-2014 |
20140027780 | LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - Disclosed is a light-emitting device comprising a light-emitting element ( | 01-30-2014 |
20140021506 | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A light emitting device includes a support member, a light emitting element, and an underfill material. The support member includes an insulating member and positive and negative electrically conductive wirings arranged on the insulating member. The electrically conductive wirings are insulated and separated from each other by an insulating region arranged between the positive and negative electrically conductive wirings. The insulating separation region includes a first region disposed on an outer side with respect to the light emitting element and a second region disposed directly under the light emitting element. The first region includes an underfill arranging portion in which an interval between the electrically conductive wirings is wider than in the second region. The underfill material is arranged to extend from the underfill arranging portion to the second region in a space formed between the support member and the light emitting element. | 01-23-2014 |
20140017829 | LIGHT EMITTING DEVICE PROVIDED WITH LENS FOR CONTROLLING LIGHT DISTRIBUTION CHARACTERISTIC - The light emitting device comprises a substrate ( | 01-16-2014 |
20130344631 | METHOD OF MANUFACTURING LIGHT EMITTING DEVICE - A light emitting device is manufactured in which a cap having a frame portion is bonded to a package having a light emitting element mounted in a recess of the package to cover an opening of the recess. A method for manufacturing the light emitting device includes: partially disposing a metal bonding agent, having greater wettability to the frame portion than to the package, to one of the package and the frame portion; and bonding the package and the frame portion by extending the metal bonding agent along the frame portion so that ends of the metal bonding agent are joined to each other while defining a space at a joining portion where the ends of the metal bonding agent are joined. | 12-26-2013 |
20130343067 | LIGHT EMITTING DEVICE - A light emitting device includes a package and a light emitting element. The package includes a resin portion and at least one lead frame arranged in the resin portion. The at least one lead frame has at least one protrusion which is surrounded by the resin portion and which has an upper surface exposed from the resin portion. The light emitting element is mounted on the upper surface of the at least one protrusion and is electrically connected to the at least one lead frame. At least a half area of the upper surface is covered with the light emitting element. | 12-26-2013 |
20130334549 | LIGHT EMITTING DEVICE, METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE, AND PACKAGE ARRAY - In a light emitting device, a first lead has a first terminal part that is contiguous with a first connector. The first terminal part includes a first convex part that is exposed from a molded article at the inner peripheral face of a mounting recess, and a first concave part that is formed in the rear face of the first convex part. | 12-19-2013 |
20130322055 | LIGHT SOURCE DEVICE AND PROJECTOR - A light source device includes a first light source, a wavelength converter including a fluorescent material, a light-controller. The light-controller is disposed in a path of light propagating from the first light source toward the wavelength converter. The light-controller switches between transmission and reflection of light from the first light source. | 12-05-2013 |
20130316478 | LIGHT EMITTING DEVICE - A light emitting device capable of improving both color unevenness and emission output power is provided. The light emitting device includes a semiconductor light emitting element including a semiconductor layer that emits primary light; and a fluorescent material layer disposed on the light emitting side of the semiconductor light emitting element, that absorbs a part of the primary light and emits secondary light having a wavelength longer than that of the primary light; and emits light of blended color of the primary light and the secondary light of the light emitting element, and further includes a scattering layer in which particles having a mean particle size D that satisfies the inequality: 20 nm11-28-2013 | |