Mapper Lithography IP B.V. Patent applications |
Patent application number | Title | Published |
20150242563 | ENHANCED STITCHING BY OVERLAP DOSE AND FEATURE REDUCTION - A method for processing exposure data ( | 08-27-2015 |
20150155136 | METHOD FOR DETERMINING A BEAMLET POSITION AND METHOD FOR DETERMINING A DISTANCE BETWEEN TWO BEAMLETS IN A MULTI-BEAMLET EXPOSURE APPARATUS - The invention relates to a method for determining a beamlet position in a charged particle multi-beamlet exposure apparatus. The apparatus is provided with a sensor comprising a conversion element for converting charged particle energy into light and a light sensitive detector. The conversion element is provided with a sensor surface area provided with a 2D-pattern of beamlet blocking and non-blocking regions. The method comprises taking a plurality of measurements and determining the position of the beamlet with respect to the 2D-pattern on the basis of a 2D-image created by means of the measurements. Each measurement comprises exposing a feature onto a portion of the 2D-pattern with a beamlet, wherein the feature position differs for each measurement, receiving light transmitted through the non-blocking regions, converting the received light into a light intensity value, and assigning the light intensity value to the position at which the measurement was taken. | 06-04-2015 |
20150144789 | VACUUM CHAMBER WITH BASE PLATE - A target processing machine ( | 05-28-2015 |
20140197330 | VIBRATION ISOLATION MODULE AND SUBSTRATE PROCESSING SYSTEM - The invention relates to a vibration isolation module ( | 07-17-2014 |
20140061497 | CHARGED PARTICLE LITHOGRAPHY SYSTEM WITH INTERMEDIATE CHAMBER - A charged particle lithography system for transferring a pattern onto the surface of a target, comprising a source for generating a charged particle beam, a first chamber housing the source, a collimating system for collimating the charged particle beam, a second chamber housing the collimating system, and a first aperture array element for generating a plurality of charged particle subbeams from the collimated charged particle beam. | 03-06-2014 |
20140049276 | CAPACITIVE SENSING SYSTEM - The invention relates to a lithography system. The lithography system has a projection lens system and a capacitive sensing system. The projection lens system is provided with a final projection lens. The capacitive sensing system is arranged for making a measurement related to a distance between the final projection lens and a target. The capacitive sensing system includes at least one capacitive sensor. Additional, the capacitive sensing system is provided with a flexible printed circuit structure and at least one integrated flex print connector. The at least one sensor is located in the flexible printed circuit structure. The flexible printed circuit structure has a flexible base provided with conductive electrodes for the at least one sensor and conductive tracks. The conductive tracks extend from the electrodes along the at least one integrated flex print connector. | 02-20-2014 |
20130133752 | Method and System for Realizing a Vacuum in a Vacuum Chamber - The invention relates to a method for realizing a vacuum in at least one vacuum chamber. The method comprises providing an arrangement comprising a plurality of vacuum chambers, wherein each vacuum chamber is connected to a shared vacuum system. The shared vacuum system comprises a plurality of turbo molecular pumps, at least one common fore pump, and a piping system comprising one or more pipes for connecting the at least one common fore pump to each of the plurality of turbo molecular pumps. Each turbo molecular pump is separately connected to a corresponding vacuum chamber. The piping system further comprises flow regulators for controlling a flow within the piping system. The method further comprises selecting at least one vacuum chamber for pump-down, and separately pumping down the at least one selected vacuum chamber by means of the shared vacuum system. | 05-30-2013 |
20130120724 | Method for splitting a pattern for use in a multi-beamlet lithography apparatus - The invention relates to a method for splitting a pattern for use in a multi-beamlet lithography apparatus. The method comprises providing an input pattern to be exposed onto a target surface by means of a plurality of beamlets of the multi-beamlet lithography apparatus. Within the input pattern first and second regions are identified. A first region is a region that is exclusively exposable by a single beamlet of the plurality of beamlets. A second region is a region that is exposable by more than one beamlet of the plurality of beamlets. On the basis of an assessment of the first and second regions it is determined what portion of the pattern is to be exposed by each beamlet. | 05-16-2013 |
20130111485 | Network architecture and protocol for cluster of lithography machines | 05-02-2013 |
20130044305 | Apparatus for transferring a substrate in a lithography system - An apparatus for transferring substrates within a lithography system, the lithography system comprising a substrate preparation unit for clamping a substrate onto a substrate support structure to form a clamped substrate, and an interface with a substrate supply system for receiving unclamped substrates. The apparatus comprises a body provided with a first set of fingers for carrying an unclamped substrate and a second set of fingers for carrying a substrate support structure, and the first set of fingers is located below the second set of fingers, and fingers of the first set of fingers have a different shape than the fingers of the second set of fingers. | 02-21-2013 |
20130043414 | SYSTEM FOR MAGNETIC SHIELDING - The invention relates to a system for magnetically shielding a charged particle lithography apparatus. The system comprises a first chamber, a second chamber and a set of two coils. The first chamber has walls comprising a magnetic shielding material, and, at least partially, encloses the charged particle lithography apparatus. The second chamber also has walls comprising a magnetic shielding material, and encloses the first chamber. The set of two coils is disposed in the second chamber on opposing sides of the first chamber. The two coils have a common axis. | 02-21-2013 |
20130043413 | Arrangement of optical fibers, and a method of forming such arrangement - A method of forming an optical fiber array. The method comprises providing a substrate having a first surface and an opposing second surface. The substrate is provided with a plurality of apertures extending through the substrate from the first surface to the second surface. Additionally, a plurality of fibers is provided. The fibers have fiber ends with a diameter smaller than the smallest diameter of the apertures. For each fiber, from the first surface side of the substrate, the fiber is inserted in a corresponding aperture such that the fiber end is positioned in close proximity of the second surface. Then the fiber is bent in a predetermined direction such that the fiber abuts a side wall of the aperture at a predetermined position. Finally, the bent fibers are bonded together using an adhesive material. | 02-21-2013 |
20130037730 | Network architecture for lithography machine cluster - The invention relates to a clustered substrate processing system comprising a plurality of lithography elements. Each lithography element is arranged for independent exposure of substrates according to pattern data, and comprises a plurality of lithography subsystems, a control network arranged for communication of control information between the lithography subsystems and at least one element control unit, the element control unit arranged to transmit commands to the lithography subsystems and the lithography subsystems arranged to transmit responses to the element control unit, and a data network arranged for communication of data logging information from the lithography subsystems to at least one data network hub, the lithography subsystems arranged to transmit data logging information to the data network hub and the data hub arranged for receiving and storing the data logging information. The system further comprises a cluster front-end for interface to an operator or host system. | 02-14-2013 |
20130034421 | Method of processing a substrate in a lithography system - A method of processing substrates in a lithography system unit, the lithography system unit comprising at least two substrate preparation units, a load lock unit comprising at least first and second substrate positions, and a substrate handling robot for transferring substrates between the substrate preparation units and the load lock unit. The method comprises providing a sequence of substrates to be exposed to the robot, including an Nth substrate, an N−1th substrate, and an N+1th substrate; transferring the Nth substrate to a first one of the substrate preparation units; clamping the Nth substrate on a first substrate support structure in the first substrate preparation unit to form a clamped Nth substrate; transferring the clamped Nth substrate from the first substrate preparation unit to an unoccupied one of the first and second positions in the load lock unit; and exposing the clamped Nth substrate in the lithography system unit. | 02-07-2013 |
20130009626 | CURRENT MEASUREMENT SYSTEM - A measurement system for measuring an input electrical current (Ics) from a current source (CS) and generating a current measurement signal, comprising a current measuring circuit ( | 01-10-2013 |
20130003034 | Active Shield for Capacitive Measurement System - A capacitive measurement system for generating a measurement signal representative of a measured position or distance to a target. The system has a first circuit comprising a thin film capacitive sensor ( | 01-03-2013 |
20120293810 | METHOD FOR DETERMINING A DISTANCE BETWEEN TWO BEAMLETS IN A MULTI-BEAMLET EXPOSURE APPARATUS - The invention relates to a method for determining a distance between charged particle beamlets in a multi-beamlet exposure apparatus. The apparatus is provided with a sensor comprising a converter element for converting charged particle energy into light and a light sensitive detector provided with a two-dimensional pattern of beamlet blocking and non-blocking regions. The method comprises scanning a first beamlet over the pattern, receiving light generated by the converter element, and converting the received light into a first signal. Then the two-dimensional pattern and the first beamlet are moved relatively with respect to each other over a predetermined distance. Subsequently, the method comprises scanning a second beamlet over the pattern, receiving light generated by the converter element, and converting the received light into a second signal. Finally, the distance between the first beamlet and second beamlet is determined based on the first signal, the second signal and the predetermined distance. | 11-22-2012 |
20120293780 | CHARGED PARTICLE LITHOGRAPHY SYSTEM WITH INTERMEDIATE CHAMBER - A charged particle lithography system for transferring a pattern onto the surface of a target, comprising a main vacuum chamber, a source chamber and an intermediate chamber, both located in the main vacuum chamber, a beam generator for generating a charged particle beam, the beam generator located in the source chamber, and a first aperture array element for generating a plurality of charged particle beamlets from the beam, the first aperture array element located in the intermediate chamber. The system is adapted for maintaining a first pressure in the main vacuum chamber, a second pressure in the intermediate chamber, and a third pressure in the source chamber, and wherein the first pressure is lower than an ambient pressure, the second pressure is lower than the first pressure, and the third pressure is lower than the second pressure. | 11-22-2012 |
20120292524 | CHARGED PARTICLE LITHOGRAPHY SYSTEM WITH APERTURE ARRAY COOLING - A charged particle lithography system for pattern transfer onto a target surface, comprising a beam generator for generating a plurality of beamlets, and a plurality of aperture array elements comprising a first aperture array, a blanker array, a beam stop array, and a projection lens array. Each aperture array element comprises a plurality of apertures arranged in a plurality of groups, wherein the aperture groups of each aperture array element form beam areas distinct and separate from non-beam areas formed between the beam areas and containing no apertures for beamlet passage. The beam areas are aligned to form beam shafts, each comprising a plurality of beamlets, and the non-beam areas are aligned to form non-beam shafts not having beamlets present therein. The first aperture array element is provided with cooling channels in the non-beam areas for transmission of a cooling medium for cooling the array element. | 11-22-2012 |
20120292491 | CHARGED PARTICLE BEAM MODULATOR - The invention relates to a charged particle lithography system comprising a beam generator for generating a plurality of charged particle beamlets, a beam stop array and a modulation device. The beam stop array has a surface for blocking beamlets from reaching a target surface and an aperture array in the surface for allowing beamlets to reach the target surface. The modulation device is arranged for modulating the beamlets by deflecting or not deflecting the beamlets so that the beamlets are blocked or not blocked by the beam stop array. A surface area of the modulation device comprises an elongated beam area comprising an array of apertures and associated modulators, and a power interface area for accommodating a power arrangement for powering elements within the modulation device. The power interface area is located alongside a long side of the elongated beam area and extending in a direction substantially parallel thereto. | 11-22-2012 |
20120287410 | DATA PATH FOR LITHOGRAPHY APPARATUS - The invention relates to a maskless lithography system for patterning a target using a plurality of charged particle beamlets. The system comprises an electron optical column including a blanker array for modulating the beamlets. The blanker array includes receivers for receiving data signals and blanker elements for modulating the beamlets in accordance with the data signals. The system further comprises a data path comprising a preprocessing system for processing pattern data and a plurality of transmission channels for transmitting processed pattern data to the blanker elements. The data path further comprises a pattern streaming system for receiving pattern data and generating data signals. First and second channel selectors connect a subset of selected transmission channels for pattern data transmission. The first channel selector is connected between the preprocessing system and the transmission channels. The second channel selector is connected between the channels and the blanker elements. | 11-15-2012 |
20120286173 | PATTERN DATA CONVERSION FOR LITHOGRAPHY SYSTEM - A method and system for exposing a target according to pattern data in a maskless lithography machine generating a plurality of exposure beamlets for exposing the target. The method comprises providing input pattern data in a vector format, rendering and quantizing the input pattern data to generate intermediate pattern data, and re-sampling and re-quantizing the intermediate pattern data to generate output pattern data. The output pattern data is supplied to the lithography machine, and the beamlets generated by the lithography machine are modulated on the basis of the output pattern data. | 11-15-2012 |
20120286170 | DUAL PASS SCANNING - A method for exposing a wafer using a plurality of charged particle beamlets. The method comprises identifying non-functional beamlets among the beamlets, allocating a first subset of the beamlets for exposing a first portion of the wafer, the first subset excluding the identified non-functional beamlets, performing a first scan for exposing the first portion of the wafer using the first subset of the beamlets, allocating a second subset of the beamlets for exposing a second portion of the wafer, the second subset also excluding the identified non-functional beamlets, and performing a second scan for exposing the second portion of the wafer using the second subset of the beamlets, wherein the first and second portions of the wafer do not overlap and together comprise the complete area of the wafer to be exposed. | 11-15-2012 |
20120286169 | METHOD OF GENERATING A TWO-LEVEL PATTERN FOR LITHOGRAPHIC PROCESSING AND PATTERN GENERATOR USING THE SAME - The invention relates to a method of generating a two-level pattern for lithographic processing by multiple beamlets. In the method, first a pattern in vector format is provided. The vector format pattern is then converted into a pattern in pixmap format. Finally, a two-level pattern is formed by application of error diffusion on the pixmap format pattern. | 11-15-2012 |
20120286168 | DATA PATH FOR LITHOGRAPHY APPARATUS - A maskless charged particle lithography system comprises an electron-optical column and a data path. The column includes a blanker array including blanker elements. The data path comprises a preprocessing system, transmission channels, and a pattern streaming system. The lithography system is configured for exposing a target field in two passes by allocating a first beamlet subset for exposing a first field subset during a first pass and a second beamlet subset for exposing a second field subset during a second pass. A first beam selector selects a first pattern data subset containing exposure data for the first beamlet subset and a second pattern data subset containing exposure data for the second beamlet subset. Second beam selectors connect transmission channels assigned for transmitting the first pattern data subset to a first blanker elements subset, and transmission channels assigned for transmitting the second pattern data subset to a second blanker elements subset. | 11-15-2012 |
20120273658 | MODULATION DEVICE AND CHARGED PARTICLE MULTI-BEAMLET LITHOGRAPHY SYSTEM USING THE SAME - The invention relates to a charged-particle multi-beamlet lithography system. The system comprises a beam generator for generating a plurality of beamlets, a beamlet blanker array for patterning the plurality of beamlets, an optical fiber arrangement, and a projection system. The beamlet blanker array comprises a substrate provided with a first area comprising one or more modulators and a second area free of modulators. The beamlet blanker array comprises one or more light sensitive elements, electrically connected to the one or more modulators, and arranged to receive light beams carrying pattern data. The optical fiber arrangement comprises a plurality of optical fibers for guiding the light beams carrying pattern data towards the one or more light sensitive elements. The projection of the optical fiber arrangement onto a surface of the beamlet blanker array in a direction perpendicular to the surface falls entirely within the second area. | 11-01-2012 |
20120224155 | DIRECT WRITE LITHOGRAPHY SYSTEM - The invention pertains to a direct write lithography system comprising: A converter comprising an array of light controllable electron sources, each field emitter being arranged for converting light into an electron beam, the field emitters having an element distance between each two adjacent field emitters, each field emitter having an activation area; A plurality of individually controllable light sources, each light source arranged for activating one field emitter; Controller means for controlling each light source individually; Focusing means for focusing each electron beam from the field emitters with a diameter smaller than the diameter of a light source on an object plane. | 09-06-2012 |
20120175527 | LITHOGRAPHY SYSTEM AND METHOD OF PROCESSING SUBSTRATES IN SUCH A LITHOGRAPHY SYSTEM - The invention relates to a lithography system comprising a plurality of lithography system units. Each lithography system unit comprises a lithography apparatus arranged in a vacuum chamber for patterning a substrate; a load lock system for transferring substrates into and out of the vacuum chamber; and a door for enabling entry into the vacuum chamber for servicing purposes. The load lock system and the door of each lithography system unit are provided at the same side and face a free area at a side of the lithography system, in particular the service area. | 07-12-2012 |
20120145931 | LITHOGRAPHY SYSTEM, MODULATION DEVICE AND METHOD OF MANUFACTURING A FIBER FIXATION SUBSTRATE - The invention relates to a charged-particle multi-beamlet lithography system for transferring a pattern onto the surface of a target. The system comprises a beam generator for generating a plurality of charged particle beamlets, a beamlet blanker array for patterning the beamlets in accordance with a pattern, and a projection system for projecting the patterned beamlets onto the target surface. The blanker array comprises a plurality of modulators and a plurality of light sensitive elements. The light sensitive elements are arranged to receive pattern data carrying light beams and to convert the light beams into electrical signals. The light sensitive elements are electrically connected to one or more modulators for providing the received pattern data. The blanker array is coupled to a fiber fixation substrate which accommodates end sections of a plurality of fibers for providing pattern data carrying light beams as an assembled group with a fixed connection. | 06-14-2012 |
20120145916 | PROJECTION LENS ARRANGEMENT - The invention relates to a charged particle multi-beamlet lithographic system for exposing a target using a plurality of beamlets. The system comprises a beamlet generator for generating a plurality of beamlets, a beamlet blanker for controllably blanking beamlets, and an array of projection lens systems for projecting unblanked beamlets on to the surface of the target. The beamlet generator comprises at least one charged particle source for generating a charged particle beam, a sub-beam generator for defining a plurality of sub-beams from the charged particle beam, a sub-beam manipulator array for influencing the sub-beams, and an aperture array for defining beamlets from the sub-beams. | 06-14-2012 |
20120145915 | Lithography system and method of refracting - A charged particle lithography system for transferring a pattern onto the surface of a target, such as a wafer, comprising a charged particle source adapted for generating a diverging charged particle beam, a converging means for refracting said diverging charged particle beam, the converging means comprising a first electrode, and an aperture array element comprising a plurality of apertures, the aperture array element forming a second electrode, wherein the system is adapted for creating an electric field between the first electrode and the second electrode. | 06-14-2012 |
20120091358 | PROJECTION LENS ARRANGEMENT - The invention relates to a charged particle multi-beamlet system for exposing a target using a plurality of beamlets. The system has a charged particle source, an aperture array, a beamlet manipulator, a beamlet blanker, and an array of projection lens systems. The charged particle source is configured to generate a charged particle beam. The aperture array is configured to define separate beamlets from the generated beam. The beamlet manipulator is configured to converge groups of the beamlets towards a common point of convergence for each group. The beamlet blanker is configured to controllably blank beamlets in the groups of beamlets. Finally, the array of projection lens systems is configured to project unblanked beamlets of the groups of beamlets on to the surface of the target. The beamlet manipulator is further adapted to converge each of the groups of beamlets towards a point corresponding to one of the projection lens systems. | 04-19-2012 |
20120091318 | BEAMLET BLANKER ARRANGEMENT - The invention relates to a charged particle multi-beamlet lithography system for exposing a target using a plurality of beamlets. The system has a beam generator, a beamlet blanker, and a beamlet projector. The beam generator is configured to generate a plurality of charged particle beamlets. The beamlet blanker is configured to pattern the beamlets. The beamlet projector is configured to project the patterned beamlets onto the target surface. The system further has a deflection device. The deflection device has a plurality of memory cells. Each memory cell is provided with a storage element and is connected to a switching electrode of a deflector. | 04-19-2012 |
20120061583 | PROJECTION LENS ARRANGEMENT - The invention relates to a charged particle optical system comprising a beamlet generator for generating a plurality of charged particle beamlets, an electrostatic deflection system for deflecting the beamlets, and a projection lens system for directing the beamlets from the beamlet generator towards the target. The electrostatic deflection system comprises a first electrostatic deflector and a second electrostatic deflector for scanning charged particle beamlets over the target. The second electrostatic deflector is located behind the first electrostatic deflector so that, during operation of the system, a beamlet generated by the beamlet generator passes both of the electrostatic deflectors. During operation of the first and second electrostatic deflectors the system is adapted to apply voltages on the first electrostatic deflector and the second electrostatic deflector of opposite sign. | 03-15-2012 |
20120043438 | SUBSTRATE SUPPORT STRUCTURE, CLAMP PREPARATION UNIT, AND LITHOGRAPHY SYSTEM - A substrate support structure for clamping a substrate on a surface by means of a capillary layer of a liquid. The surface has an outer edge and includes one or more substrate supporting elements for receiving the substrate to be clamped, wherein the one or more substrate supporting elements are arranged to provide support for the substrate at a plurality of support locations. The substrate support structure further includes a sealing structure circumscribing the surface and having a top surface or edge forming a sealing rim. A distance between the outer edge of the surface and an outermost of the support locations is greater than a distance between the outer edge and the sealing rim. | 02-23-2012 |
20110266418 | Charged particle multi-beamlet lithography system, modulation device , and method of manufacturing thereof - The invention relates to a modulation device for use in a charged particle multi-beamlet lithography system. The device includes a body comprising an interconnect structure provided with a plurality of modulators and interconnects at different levels within the interconnect structure for enabling connection of the modulators to one or more pattern data receiving elements. A modulator includes a first electrode, a second electrode, and an aperture extending through the body. The electrodes are located on opposing sides of the aperture for generating an electric field across the aperture. At least one of the first electrode and the second electrode includes a first conductive element formed at a first level of the interconnect structure and a second conductive element formed at a second level of the interconnect structure. The first and second conductive elements are electrically connected with each other. | 11-03-2011 |
20110261344 | EXPOSURE METHOD - A method for exposing a surface of a target in a system comprising a set of sensors ( | 10-27-2011 |
20110261340 | Modulation device and charged particle multi-beamlet lithography system using the same - The invention relates to a charged-particle multi-beamlet lithography system for transferring a pattern onto the surface of a target using a plurality of charged particle beamlets. The system includes a beam generator, a beamlet blanker array, a shielding structure and a projection system. The beam generator is arranged for generating a plurality of charged particle beamlets. The beamlet blanker array is arranged for patterning the plurality of beamlets in accordance with a pattern. The beamlet blanker array comprises a plurality of modulators and a plurality of light sensitive elements, a light sensitive element being arranged to receive pattern data carrying light beams and to convert the light beams into electrical signals. The light sensitive elements are electrically connected to one or more modulators for providing the received pattern data. The shielding structure is of an electrically conductive material for substantially shielding electric fields generated in proximity of the light sensitive elements from the modulators, wherein the shielding structure is arranged to be set at a predetermined potential. The projection system is arranged for projecting the patterned beamlets onto the target surface. | 10-27-2011 |
20110260040 | Charged particle multi-beamlet lithography system with modulation device - A charged particle lithography system for transferring a pattern onto the surface of a target. The system comprises a beam generator for generating a plurality of charged particle beamlets, the plurality of beamlets defining a column, a beam stop array having a surface for blocking beamlets from reaching the target surface and an array of apertures in the surface for allowing the beamlets to reach the target surface, and a modulation device for modulating the beamlets to prevent one or more of the beamlets from reaching the target surface or allow one or more of the beamlets to reach the target surface, by deflecting or not deflecting the beamlets so that the beamlets are blocked or not blocked by the beam stop array. The modulation device comprises a plurality of apertures arranged in arrays for letting the beamlets pass through the modulation device, a plurality of modulators arranged in arrays, each modulator provided with electrodes extending on opposing sides of an aperture for generating a voltage difference across the aperture, and a plurality of light sensitive elements arranged in arrays, for receiving modulated light beams and converting the light beams into electric signals for actuating the modulators, wherein the light sensitive elements are located within the column, wherein the modulation device is subdivided into a plurality of alternating beam areas and non-beam areas, the arrays of modulators are located in the beam areas, and the arrays of light sensitive elements are located in the non-beam areas and are in communication with the modulators in an adjacent beam area. | 10-27-2011 |
20110254565 | CAPACITIVE SENSING SYSTEM WITH DIFFERENTIAL PAIRS - A capacitive sensing system comprising two or more capacitive sensors, one or more AC power sources for energizing the capacitive sensors, and a signal processing circuit for processing signals from the sensors. The sensors are arranged in pairs, wherein the one or more AC power sources are arranged to energize a first sensor of a pair of the sensors with an alternating current or voltage 180 degrees out of phase to a current or voltage for a second sensor of the pair of sensors, and wherein a pair of the sensors provides a measuring unit for a single measured distance value, the signal processing circuit receiving an output signal from each sensor of the pair and generating a measured value related to the average distance between the sensors of the pair and the target. | 10-20-2011 |
20110253900 | LITHOGRAPHY SYSTEM, SENSOR, CONVERTER ELEMENT AND METHOD OF MANUFACTURE - Charged particle beamlet lithography system for transferring a pattern to a surface of a target comprising a sensor for determining one or more characteristics of one or more charged particle beamlets. The sensor comprises a converter element for receiving charged particles and generating photons in response. The converter element comprises a surface for receiving one or more charged particle beamlets, the surface being provided with one or more cells for evaluating one or more individual beamlets. Each cell comprises a predetermined blocking pattern of one or more charged particle blocking structures forming multiple knife edges at transitions between blocking and non-blocking regions along a predetermined beamlet scan trajectory over the converter element surface. The converter element surface is covered with a coating layer substantially permeable for said charged particles and substantially impermeable for ambient light. An electrically conductive layer is located between the coating layer and the blocking structures. | 10-20-2011 |
20110216299 | ELECTROSTATIC LENS STRUCTURE - An electrostatic lens comprising a first conductive plate with a first aperture, a second conductive plate with a second aperture, the second aperture being substantially aligned with the first aperture, a voltage supply for supplying a first voltage to the first conductive plate and a second voltage to the second conductive plate, the first voltage being lower than the second voltage, and an insulating structure for separating the first conductive plate from the second conductive plate. The insulating structure comprises a first portion in contact with the first conductive plate and a second portion in contact with the second conductive plate, the first portion having an overhanging portion and the second portion having an indented portion at an edge of the insulating structure, so that a gap is formed between the overhanging portion and the second conductive plate. | 09-08-2011 |
20110193574 | CAPACITIVE SENSING SYSTEM - A capacitive sensing system, comprising a sensor having thin film structure, the thin film structure comprising a sensor having a first insulating layer and a first conductive film comprising a sensing electrode formed on a first surface of the first insulating layer and a second conductive film comprising a back guard electrode. The back guard electrode is formed in a single plane and comprises a peripheral portion in the same plane, and is disposed on a second surface of the first insulating layer and a first surface of a second insulating layer or protective layer. The peripheral portion of the back guard electrode extends beyond the sensing electrode to form a side guard electrode which substantially or completely surrounds the sensing electrode. | 08-11-2011 |
20110193573 | INTEGRATED SENSOR SYSTEM - An integrated sensor system for a lithography machine, the system comprising a projection lens system ( | 08-11-2011 |
20110079730 | IMAGING SYSTEM - A charged particle multi-beamlet system for exposing a target ( | 04-07-2011 |
20110073782 | METHOD OF AND SYSTEM FOR EXPOSING A TARGET - The invention relates to a method of exposing a target by means of a plurality of beamlets. First, a plurality of beamlets is provided. The beamlets are arranged in an array. Furthermore, a target to be exposed is provided. Subsequently, relative movement in a first direction between the plurality of beamlets and the target is created. Finally, the plurality of beamlets is moved in a second direction, such that each beamlet exposes a plurality of scan lines on the target. The relative movement in the first direction and the movement of the plurality of beamlets in the second direction are such that the distance between adjacent scan lines exposed by the plurality of beamlets is smaller than a projection pitch P | 03-31-2011 |
20110049393 | Lithography Machine and Substrate Handling Arrangement - An arrangement comprising a plurality of charged particle lithography apparatuses, each charged particle lithography apparatus having a vacuum chamber. The arrangement further comprises a common robot for conveying wafers to the plurality of lithography apparatuses, and a wafer load unit for each charged particle lithography apparatus arranged at a front side of each respective vacuum chamber. The plurality of lithography apparatuses are arranged in a row with the front side of the lithography apparatuses facing an aisle accommodating passage of the common robot for conveying wafers to each apparatus, and the rear side of each lithography apparatus faces an access corridor, and the back wall of each vacuum chamber is provided with an access door for access to the respective lithography apparatus. | 03-03-2011 |
20110042579 | CHARGED PARTICLE LITHOGRAPHY APPARATUS AND METHOD OF GENERATING VACUUM IN A VACUUM CHAMBER - The invention relates to a charged particle lithography apparatus with a charged particle source for creating one or more charged particle beams, a charged particle projector for projecting the beams onto a wafer; and a moveable wafer stage for carrying the wafer. The charged particle source, charged particle projector, and moveable wafer stage are disposed in a common vacuum chamber forming a vacuum environment. The vacuum chamber further has an opening for loading wafers into the chamber and a door. | 02-24-2011 |
20100276606 | Charged particle optical system comprising an electrostatic deflector - A charged particle optical system comprising a beamlet generator for generating a plurality of beamlets of charged particles and an electrostatic deflector for deflecting the beamlets. The electrostatic deflector comprises first and second electrodes adapted for connection to a voltage for generating an electric field between the electrodes for deflection of the beamlets, the electrodes being at least partially freestanding in an active area of the electrostatic deflector. The electrodes define at least one passing window for passage of at least a portion of the beamlets between the electrodes, the passing window having a length in a first direction and a width in a transverse direction. The system is adapted to arrange the beamlets in at least one row and to direct a single row of the beamlets through the passing window of the electrostatic deflector, the beamlets of the row extending in the first direction. A substantial part of the electrostatic deflector extends beyond the passing window in the first direction. | 11-04-2010 |
20100270299 | CHARGED PARTICLE LITHOGRAPHY APPARATUS AND METHOD OF GENERATING VACUUM IN A VACUUM CHAMBER - A vacuum chamber comprising a plurality of wall panels enclosing an interior space, in which the wall panels are removably attached to form the chamber using a plurality of connection members for locating the wall panels in a predetermined arrangement. The vacuum chamber further comprises one or more sealing members provided at the edges of the wall panels. The wall panels are arranged so that a vacuum tight seal is formed at the edges of the wall panels as a result of forming a vacuum in the interior space. | 10-28-2010 |
20100269911 | Method and Arrangement for Realizing a Vacuum in a Vacuum Chamber - The invention relates to a method of realizing a vacuum in a vacuum chamber. The vacuum chamber is connected to a pumping system shared by a plurality of vacuum chambers. The method includes separately pumping down each vacuum chamber. The invention further relates to n arrangement of a plurality of vacuum chambers connected to a pumping system. In this arrangement, the pumping system is arranged for pumping down each vacuum chamber separately. | 10-28-2010 |
20100265486 | METHOD OF CLAMPING A SUBSTRATE AND CLAMP PREPARATION UNIT - The invention relates to a method of clamping a substrate on a surface of a substrate support structure. First, a liquid is applied on a surface of the substrate support structure. The surface is provided with a plurality of contact elements. The liquid is applied such that the contact elements are fully covered by a liquid layer. Then the substrate is provided and placed onto the liquid layer. Finally, liquid underneath the substrate is removed such that the substrate rests on the plurality of contact elements and is clamped by means of a capillary clamping force exerted by a capillary layer of the liquid between the substrate and the surface of the substrate support structure. | 10-21-2010 |
20100238421 | Preparation Unit for Lithography Machine - A charged particle lithography system comprising a preparation unit. The preparation unit comprises a housing having a first load port for loading and/or unloading a substrate into or out of the housing, a substrate transfer unit for locating the substrate onto a substrate support structure within the housing, and a second load port for loading and/or unloading the substrate support structure supporting the substrate. | 09-23-2010 |
20100236476 | Substrate Support Structure, Clamp Preparation Unit, and Lithography System - A substrate support structure for clamping a substrate by means of a capillary force created by a liquid clamping layer having a lower pressure than its surroundings. The substrate support structure comprises a surface provided with a plurality of substrate supporting elements for holding the substrate, and the surface further comprises portions with different capillary potential for inducing, during clamping, a predetermined capillary flow within the liquid clamping layer. | 09-23-2010 |
20090261267 | PROJECTION LENS ARRANGEMENT - A projection lens arrangement for a charged particle multi-beamlet system, the projection lens arrangement including one or more plates and one or more arrays of projection lenses. Each plate has an array of apertures formed in it, with projection lenses formed at the locations of the apertures. The arrays of projection lenses form an array of projection lens systems, each projection lens system comprising one or more of the projection lenses formed at corresponding points of the one or more arrays of projection lenses. The projection lens systems are arranged at a pitch in the range of about 1 to 3 times the diameter of the plate apertures, and each projection lens system is for demagnifying and focusing one or more of the charged particle beamlets on to the target plane, each projection lens system has an effective focal length in the range of about 1 to 5 times the pitch, and demagnifies the charged particle beamlets by at least 25 times. | 10-22-2009 |
20090212229 | PROJECTION LENS ARRANGEMENT - A charged particle multi-beamlet system for exposing a target using a plurality of beamlets. The system comprises a first plate having a plurality of holes formed in it, with a plurality of electrostatic projection lens systems formed at the location of each hole so that each electron beamlet passes through a corresponding projection lens system. The holes have sufficiently uniform placement and dimensions to enable focusing of the beamlets onto the surface of the target using a common control voltage. Preferably the electrostatic projection lens systems are controlled by a common electrical signal to focus the electron beamlets on the surface without correction of the focus or path of individual electron beamlets. | 08-27-2009 |