LUMIGNTECH CO., LTD. Patent applications |
Patent application number | Title | Published |
20130178049 | METHOD OF MANUFACTURING SUBSTRATE - The present invention is directed to a method of manufacturing a substrate, which includes loading a base substrate into a reaction furnace; forming a buffer layer on the base substrate; forming a separation layer on the buffer layer; forming a semiconductor layer on the separation layer at least two; and separating the semiconductor layer from the base substrate via the separation layer through natural cooling by unloading the base substrate from the reaction furnace. | 07-11-2013 |
20110101307 | SUBSTRATE FOR SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - Provided are a semiconductor substrate including an uneven structure disposed on a surface of a substrate, a buffer layer disposed on the uneven structure, the buffer layer having an acicular structure, a compound semiconductor layer disposed on the buffer layer to planarize the uneven structure, and a plurality of voids defined between the substrate and the compound semiconductor layer, and a method for manufacturing the same. Thus, since the acicular structure disposed on the uneven structure of the substrate forms the voids on an interface between the substrate and the single crystal GaN layer to relax a stress due to a lattice mismatch and intercept propagation of a breakdown potential, a warpage characteristic of the grown single crystal GaN layer may be reduced, as well as, crystallinity may be improved. | 05-05-2011 |
20110024878 | SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME - Provided is a semiconductor substrate and a method for manufacturing the same. The semiconductor substrate includes a substrate, a discontinuously formed hemispheric metal layer on the substrate, and a semiconductor layer on the hemispheric metal layer. A plurality of voids on the interface of the substrate and discontinuous hemisphere are formed to absorb or relax the stain of interface. Accordingly, even if a subsequent layer is relatively thickly formed on the substrate, substrate bow or warpage can be minimized. | 02-03-2011 |