LIGHTWIRE, INC. Patent applications |
Patent application number | Title | Published |
20120237160 | Enhanced Low Inductance Interconnections Between Electronic and Opto-Electronic Integrated Circuits - A configuration for routing electrical signals between a conventional electronic integrated circuit (IC) and an opto-electronic subassembly is formed as an array of signal paths carrying oppositely-signed signals on adjacent paths to lower the inductance associated with the connection between the IC and the opto-electronic subassembly. The array of signal paths can take the form of an array of wirebonds between the IC and the subassembly, an array of conductive traces formed on the opto-electronic subassembly, or both. | 09-20-2012 |
20120230626 | Optical Modulator Utilizing Unary Encoding And Auxiliary Modulator Section For Load Balancing - An optical modulator is configured to include multiple modulating sections formed along each arm and create a unary-encoded optical output signal by driving the number of sections required to represent the data value being transmitted (e.g., three sections driven to represent the data value “3”, four sections driven to represent the data value “4”). An auxiliary modulating section, isolated from the optical signal path, is included for creating a path for current flow in situations where only an odd number of modulating sections are required to represent the data. The activation of the auxiliary modulation section minimizes the current imbalance that would otherwise be present along a common node of the arrangement. | 09-13-2012 |
20120155799 | Silicon-Based Opto-Electronic Integrated Circuit With Reduced Polarization Dependent Loss - A silicon-based opto-electronic circuit is formed to exhibit reduced polarization-dependent loss by strategically placing the photodetecting device as close as possible to the entry point of the optical signal into the opto-electronic circuit arrangement. While the incoming optical signal will include both TE and TM modes, by minimizing the length of the optical waveguide path along which the signal must propagate before reaching a photodetector, the attenuation associated with TM mode signal will be negligible. | 06-21-2012 |
20110317958 | Vent Structures For Encapsulated Components On An SOI-Based Photonics Platform - An silicon-on-insulator (SOI)-based photonics platform is formed to including a venting structure for encapsulating the active and passive optical components formed on the SOI-based photonics platform. The venting structure is used to allow for the encapsulated components to “breathe” such that water vapor and gasses will pass through the package and not condensate on any of the encapsulated optical surfaces. The venting structure is configured to also to prevent dust, liquids and other particulate material from entering the package. | 12-29-2011 |
20110222813 | Optical Modulators With Controllable Chirp - A semiconductor-based optical modulator is presented that includes a separate phase control section to adjust the amount of chirp present in the modulated output signal. At least one section is added to the modulator configuration and driven to create a pure “phase” signal that will is added to the output signal and modify the e | 09-15-2011 |
20110222812 | Dopant Profile Control For High Speed Silicon-Based Optical Modulators - A high speed silicon-based optical modulator with control of the dopant profiles in the body and gate regions of the device reduces the series resistance of the structure without incurring substantial optical power loss. That is, the use of increased dopant values in areas beyond the active region will allow for the series resistance to be reduced (and thus increase the modulating speed of the device) without incurring too large a penalty in signal loss. The dopant profiles within the gate and body regions are tailored to exhibit an intermediate value between the high dopant concentration in the contact areas and the low dopant concentration in the carrier integration window area. | 09-15-2011 |
20110221019 | Silicon-Based Schottky Barrier Detector With Improved Responsivity - A planar, waveguide-based silicon Schottky barrier photodetector includes a third terminal in the form of a field plate to improve the responsivity of the detector. Preferably, a silicide used for the detection region is formed during a processing step where other silicide contact regions are being formed. The field plate is preferably formed as part of the first or second layer of CMOS metallization and is controlled by an applied voltage to modify the electric field in the vicinity of the detector's silicide layer. By modifying the electric field, the responsivity of the device is “tuned” so as to adjust the momentum of “hot” carriers (electrons or holes, depending on the conductivity of the silicon) with respect to the Schottky barrier of the device. The applied potential functions to align with the direction of momentum of the “hot” carriers in the preferred direction “normal” to the silicon-silicide interface, allowing for an increased number to move over the Schottky barrier and add to the generated photocurrent. | 09-15-2011 |
20110216997 | Sub-Micron Planar Lightwave Devices Formed on an SOI Optical Platform - A set of planar, two-dimensional optical devices is able to be created in a sub-micron surface layer of an SOI structure, or within a sub-micron thick combination of an SOI surface layer and an overlying polysilicon layer. Conventional masking/etching techniques may be used to form a variety of passive and optical devices in this SOI platform. Various regions of the devices may be doped to form the active device structures. Additionally, the polysilicon layer may be separately patterned to provide a region of effective mode index change for a propagating optical signal. | 09-08-2011 |
20110127633 | Slotted Configuration for Optimized Placement of Micro-Components using Adhesive Bonding - An arrangement for improving adhesive attachment of micro-components in an assembly utilizes a plurality of parallel-disposed slots formed in the top surface of the substrate used to support the micro-components. The slots are used to control the flow and “shape” of an adhesive “dot” so as to quickly and accurately attach a micro-component to the surface of a substrate. The slots are formed (preferably, etched) in the surface of the substrate in a manner that lends itself to reproducible accuracy from one substrate to another. Other slots (“channels”) may be formed in conjunction with the bonding slots so that extraneous adhesive material will flow into these channels and not spread into unwanted areas. | 06-02-2011 |