20140353684 | SILICON CARBIDE EPITAXIAL WAFER AND METHOD FOR FABRICATING THE SAME - A method for fabricating a silicon carbide epitaxial wafer according to the embodiment includes introducing a carbon source and a silicon source into a reactor in which a silicon carbide wafer is provided; heating the reactor; and adjusting an amount of the silicon source or the carbon source introduced into the reactor. A silicon carbide epitaxial wafer according to the embodiment includes a silicon carbide epitaxial layer having a surface roughness of 0.3 nm or less. | 12-04-2014 |