Institute of Physics, Chinese Academy of Sciences Patent applications |
Patent application number | Title | Published |
20150123754 | Nano-Patterned System And Magnetic-Field Applying Device Thereof - A nano-patterned system comprises a vacuum chamber, a sample stage and a magnetic-field applying device. The magnetic-field applying device comprises a power supply, magnetic poles, and a magnetic-field generation device having a magnetic conductive soft iron core and a coil connected to the power supply and wound on the soft iron core to generate a magnetic field. The soft iron core is a semi-closed frame structure and the magnetic poles are respectively disposed at the two ends of the semi-closed frame structure. The sample stage is inside the vacuum chamber. The magnetic poles are opposite one another inside the vacuum chamber with respect to the sample stage. The coil and soft iron core are outside the vacuum chamber. The soft iron core leads the magnetic field generated by the coil into the vacuum chamber. The magnetic poles locate a sample on the sample stage and apply a local magnetic field. | 05-07-2015 |
20150085349 | NONLINEAR OPTICAL DEVICE MANUFACTURED WITH 4H SILICON CARBIDE CRYSTAL - Provided is a nonlinear optical device manufactured with 4H silicon carbide crystal. The nonlinear optical crystal may be configured to alter at least a light beam ( | 03-26-2015 |
20150047371 | BONDED La(Fe,Si)13-BASED MAGNETOCALORIC MATERIAL AND PREPARATION AND USE THEREOF - Provided is a high-strength, bonded La(Fe, Si) | 02-19-2015 |
20140321199 | Nano Multilayer Film, Field Effect Tube, Sensor, Random Accessory Memory and Preparation Method - Disclosed are nano multilayer film of electrical field modulation type, a field effect transistor of electrical field modulation type, an electrical field sensor of switch type, and a random access memory of electrical field drive type, for obtaining an electro-resistance effect in an electrical field modulation multilayer film at room temperature. The nano multilayer film comprises in succession from bottom to top a bottom layer ( | 10-30-2014 |
20140290274 | First-order phase-transition La(Fe,Si)13-based magnetocaloric material showing small hysteresis loss and preparation and use thereof - The invention provides a first-order phase-transition La(Fe,Si) | 10-02-2014 |
20140247061 | MEASURING WHISPERING-GALLERY-MODE RESONATOR - A measuring whispering-gallery-mode resonator, comprising: a dielectric resonating body with a rotation axis; a superconducting sample under test, which is mounted to the resonating body; a coupling unit for coupling a measuring waveguide with the resonating body, wherein one side of the resonating body connected with the coupling unit is provided with a first endplate, wherein m coupling holes penetrate through the first endplate, and centers of the m coupling holes are arranged to be evenly spaced along a circle whose center is on the rotation axis; the coupling unit has a feeder line which is a coaxial waveguide, wherein an axis of the coaxial waveguide coincides with the rotation axis, and one end surface of the coaxial waveguide, which is perpendicular to the rotation axis, abuts to the first endplate; and the axial index of operated whispering gallery mode in the resonator is an integer multiple of the number m of the coupling holes. | 09-04-2014 |
20140179026 | METHOD FOR GENERATING QUANTIZED ANOMALOUS HALL EFFECT - A method for generating quantum anomalous Hall effect is provided. A topological insulator quantum well film in 3QL to 5QL is formed on an insulating substrate. The topological insulator quantum well film is doped with a first element and a second element to form the magnetically doped topological insulator quantum well film. The doping of the first element and the second element respectively introduce hole type charge carriers and electron type charge carriers in the magnetically doped topological insulator quantum well film, to decrease the carrier density of the magnetically doped topological insulator quantum well film to be smaller than or equal to 1×10 | 06-26-2014 |
20140178674 | TOPOLOGICAL INSULATOR STRUCTURE - A topological insulator structure includes an insulating substrate and a magnetically doped TI quantum well film located on the insulating substrate. A material of the magnetically doped TI quantum well film is represented by a chemical formula of Cr | 06-26-2014 |
20140175382 | ELECTRICAL DEVICE - An electrical device includes an insulating substrate and a magnetically doped TI quantum well film. The insulating substrate includes a first surface and a second surface. The magnetically doped topological insulator quantum well film is located on the first surface of the insulating substrate. A material of the magnetically doped topological insulator quantum well film is represented by a chemical formula of Cr | 06-26-2014 |
20140175373 | TOPOLOGICAL INSULATOR STRUCTURE - A topological insulator structure includes an insulating substrate and a magnetically doped TI quantum well film located on the insulating substrate. A material of the magnetically doped TI quantum well film is represented by a chemical formula of Cr | 06-26-2014 |
20140174343 | METHOD FOR MAKING TOPOLOGICAL INSULATOR STRUCTURE - A method for forming a topological insulator structure is provided. A strontium titanate substrate having a surface (111) is used. The surface (111) of the strontium titanate substrate is cleaned by heat-treating the strontium titanate substrate in the molecular beam epitaxy chamber. The strontium titanate substrate is heated and Bi beam, Sb beam, Cr beam, and Te beam are formed in the molecular beam epitaxy chamber in a controlled ratio achieved by controlling flow rates of the Bi beam, Sb beam, Cr beam, and Te beam. The magnetically doped topological insulator quantum well film is formed on the surface (111) of the strontium titanate substrate. The amount of the hole type charge carriers introduced by the doping with Cr is substantially equal to the amount of the electron type charge carriers introduced by the doping with Bi. | 06-26-2014 |
20140166159 | LA(FE,SI)13-BASED MAGNETIC REFRIGERATION MATERIAL PREPARED FROM INDUSTRIAL-PURE MISCHMETAL AS THE RAW MATERIAL AND PREPARATION AND USE THEREOF - The invention provides a La(Fe,Si) | 06-19-2014 |
20130313575 | SEMI-INSULATING SILICON CARBIDE MONOCRYSTAL AND METHOD OF GROWING THE SAME - A semi-insulating silicon carbide monocrystal and a method of growing the same are disclosed. The semi-insulating silicon carbide monocrystal comprises intrinsic impurities, deep energy level dopants and intrinsic point defects. The intrinsic impurities are introduced unintentionally during manufacture of the silicon carbide monocrystal, and the deep energy level dopants and the intrinsic point defects are doped or introduced intentionally to compensate for the intrinsic impurities. The intrinsic impurities include shallow energy level donor impurities and shallow energy level acceptor impurities. A sum of a concentration of the deep energy level dopants and a concentration of the intrinsic point defects is greater than a difference between a concentration of the shallow energy level donor impurities and a concentration of the shallow energy level acceptor impurities, and the concentration of the intrinsic point defects is less than the concentration of the deep energy level dopants. The semi-insulating SiC monocrystal has resistivity greater than 1×10 | 11-28-2013 |
20130269598 | PROCESS FOR GROWING SILICON CARBIDE SINGLE CRYSTAL BY PHYSICAL VAPOR TRANSPORT METHOD AND ANNEALING SILICON CARBIDE SINGLE CRYSTAL IN SITU - A technology for growing silicon carbide single crystals by PVT (Physical Vapor Transport) and a technology for in-situ annealing the crystals after growth is finished is provided. The technology can achieve real-time dynamic control of the temperature distribution of growth chamber by regulating the position of the insulation layer on the upper part of the graphite crucible, thus controlling the temperature distribution of growth chamber in real-time during the growth process according to the needs of the technology, which helps to significantly improve the crystal quality and production yield. After growth is finished, the inert gas pressure in growth chamber is raised and the temperature gradient of the growth chamber is reduced so that in-situ annealing the silicon carbide crystals can be carried out under a small one, which helps to reduce the stress between the crystal and the crucible lid as well as that in sublimation grown crystals to reduce the breakage ratio and improve the yield ratio during the subsequent fabrication process. | 10-17-2013 |
20130200293 | LA(FE,SI)13-BASED MULTI-INTERSTITIAL ATOM HYDRIDE MAGNETIC REFRIGERATION MATERIAL WITH HIGH TEMPERATURE STABILITY AND LARGE MAGNETIC ENTROPY CHANGE AND PREPARATION METHOD THEREOF - The invention discloses a La(Fe,Si) | 08-08-2013 |
20130099780 | MAGNETIC NANO-MULTILAYERS FOR MAGNETIC SENSORS AND MANUFACTURING METHOD THEREOF - The invention discloses a magnetic nano-multilayers structure and the method for making it. The multilayer film includes—sequentially from one end to the other end—a substrate, a bottom layer, a magnetic reference layer, a space layer, a magnetic detecting layer and a cap layer. The, up-stated structure is for convert the information of the rotation of the magnetic moment of the magnetic detecting layer into electrical signals. The magnetic detecting layer is of a pinning structure to react to the magnetic field under detection. On the other hand, the invention sandwiches an intervening layer between the AFM and the FM to mitigate the pinning effect from the exchange bias. Moreover, the thickness of the intervening layer is adjustable to control the pinning effect from the exchange bias. The controllability ensures that the magnetic moments of the magnetic reference layer and the magnetic detecting layer remain at right angles to each other when the external field is zero. The invention achieves a GMR or TMR magnetic sensor exhibiting a linear response and by tuning the thickness of the non-magnetic metallic layer, the sensitivity as well as the detecting range of the devices can be tuned easily. | 04-25-2013 |
20090273972 | MAGNETIC LOGIC ELEMENT WITH TOROIDAL MULTIPLE MAGNETIC FILMS AND A METHOD OF LOGIC TREATMENT USING THE SAME - A magnetic logic element with toroidal magnetic multilayers ( | 11-05-2009 |
20090152513 | POLAR MOLECULE DOMINATED ELECTRORHEOLOGICAL FLUID - Polar molecules dominated electrorheological fluids mainly comprising a mixture of dispersed phase of solid particles and/or dispersing liquid medium. The dispersed phase solid particles, on the surface, or the liquid dispersing medium contain polar molecules or polar groups, the dipole moment of which is 0.5-10 deb and the size is between 0.1 nm and 0.8 nm. Dispersed phase solid particles are spherical or nearly spherical, of which the size is 10-300 nm and dielectric constant is higher than 50. The conductance rate of the liquid dispersing medium is lower than 10 | 06-18-2009 |
20090136394 | SURFACE MODIFIED ELECTRODES FOR ER FLUIDS - The invention relates to modified electrodes for ER fluids prepared by adding a rough, wear-resisting, and low conductive modified layer on the surface of metallic electrodes. The material for the modified layer can be at least one from diamond, alumina, titanium dioxide, carborundum, titanium nitride, nylon, polytetrafluoroethylene, adhesive, and adhesive film. Through the addition of the modified layer, the adhesion of the ER fluid to electrodes is increased so that the shear stress measured near the plates is close to the intrinsic value, which makes the ER fluid applicable, while reducing the leakage current and increasing the breakdown voltage of the ER fluid equipment. | 05-28-2009 |
20080246023 | Transistor Based on Resonant Tunneling Effect of Double Barrier Tunneling Junctions - The present invention relates to a transistor based on resonant tunneling effect of double barrier tunneling junctions comprising: a substrate, an emitter, a base, a collector and a first and a second tunneling barrier layers; wherein the first tunneling barrier layer is located between the emitter and the base, and the second tunneling barrier layer is located between the base and the collector; furthermore, the junction areas of the tunneling junctions which are formed between the emitter and the base and between the base and collector respectively are 1 μm | 10-09-2008 |