FEEI CHERNG ENTERPRISE CO., LTD. Patent applications |
Patent application number | Title | Published |
20130313019 | Casing for Network Transformers - The invention provides a casing for network transformers. The casing includes a base, pins and a cover plate. The base has two side plates, two end plates and a bottom plate. The pins are embedded in the side plates of the base. Each of the pins has a first soldering portion formed by protruding from the bottom plate, a connecting portion formed by protruding from a surface of the side plate away from the bottom plate and a second soldering portion formed by extending from the connecting portion and then being bent, in which the first soldering portion extends to form a soldering segment, and the second soldering portion has a soldering surface. The first soldering portion fits to the bottom plate so as to increase its anti-deformation capability. The soldering surface is a larger flat surface so as to increase the soldering accuracy and convenience. | 11-28-2013 |
20130256786 | TRENCH MOSFET WITH SHIELDED ELECTRODE AND AVALANCHE ENHANCEMENT REGION - A trench MOSFET with shielded electrode and improved avalanche enhancement region is disclosed. The inventive structure can achieve a better avalanche capability by applying an improved avalanche enhancement region having a same doping concentration as the epitaxial layer where said trench MOSFET is formed without increasing Rds. | 10-03-2013 |
20130168764 | TRENCH SEMICONDUCTOR POWER DEVICE HAVING ACTIVE CELLS UNDER GATE METAL PAD - A trench semiconductor power device having active cells under gate metal pad to increase total active area for lowering on-resistance is disclosed. The gate metal pad is not only for gate wire bonding but also for active cells disposition. Therefore, the device die can be shrunk so that the number of devices per wafer is increased for die cost reduction. Moreover, the device can be packaged into smaller type package for further cost reduction. | 07-04-2013 |
20130168761 | SEMICONDUCTOR POWER DEVICE HAVING IMPROVED TERMINATION STRUCTURE FOR MASK SAVING - A improved termination structure for semiconductor power devices is disclosed, comprising a trenched field plate formed not only along trench sidewall but also on trench bottom of the wide termination trench by doing poly-silicon CMP so that body ion implantation is blocked by the trenched field plate on the trench bottom to prevent a body region formation underneath the trench bottom of the wide termination trench, degrading avalanche voltage. | 07-04-2013 |
20130113038 | TRENCH MOSFET WITH SPLIT TRENCHED GATE STRUCTURES IN CELL CORNERS FOR GATE CHARGE REDUCTION - A trench MOSFET with closed cells having split trenched gates structure in trenched gates intersection area in cell corner is disclosed. The invented split trenched gates structure comprises an insulation layer between said split trenched gates with thick thermal oxide layer in center portion of the trenched gates intersection area, therefore further reducing Qgd of the trench MOSFET without increasing additional Rds. | 05-09-2013 |