EUGENE TECHNOLOGY CO., LTD. Patent applications |
Patent application number | Title | Published |
20150380284 | APPARATUS FOR PROCESSING SUBSTRATE - Provided is a substrate processing apparatus. The substrate processing apparatus includes a process chamber having an inner space in which a substrate transferred from the outside is accommodated, and a process with respect to the substrate is performed, hot-wire heaters disposed in a sidewall of the process chamber, the hot-wire heaters being disposed around the inner space to heat the substrate, and a cooling tube in which a refrigerant supplied from the outside flows, the cooling tube being disposed between the hot-wire heaters along the sidewall of the process chamber. | 12-31-2015 |
20150369539 | APPARATUS FOR PROCESSING SUBSTRATE - Provided is a substrate processing apparatus. The substrate processing apparatus includes a process chamber having an inner space in which a substrate transferred from the outside is accommodated, and a process with respect to the substrate is performed and a tube type heater disposed around the inner space in a sidewall of the process chamber, the tube type heater having a passage through which a refrigerant supplied from the outside flows. | 12-24-2015 |
20150337460 | SUBSTRATE-PROCESSING DEVICE - Provided is a substrate processing apparatus. The substrate processing apparatus includes a process chamber in which a process with respect to a substrate is performed, a preliminary chamber connected to the process chamber, the preliminary chamber having a passage through which the substrate is accessed, a blocking plate partitioning the inside of the preliminary chamber into a holding region and a transfer region, a substrate holder on which at least one substrate is loaded, the substrate holder being switchable into a loading position in which the substrate holder is disposed on the holding region and a process position in which the substrate holder is disposed on the process chamber, a substrate transfer unit transferring the substrate holder from the loading position to the process position, the substrate transfer unit including a transfer arm connected to the substrate holder and a driver operating the transfer arm, a gas supply port supplying an inert gas into the preliminary chamber, and a lower exhaust port connected to the transfer region and disposed above the gas supply port to exhaust the inside of the preliminary chamber. The lower exhaust port is disposed closer to a bottom surface of the preliminary chamber than a top surface of the preliminary chamber. | 11-26-2015 |
20150299860 | SUBSTRATE TREATMENT APPARATUS, AND METHOD FOR CONTROLLING TEMPERATURE OF HEATER - According to an embodiment of the present invention, a substrate processing apparatus includes: a main chamber having a process space in which a process with respect to a substrate is performed; a heater disposed in the process space to heat the substrate placed on an upper portion thereof; and a cooling ring disposed around the heater, the cooling ring having a plurality of gas passages spaced apart at a predetermined distance around the heater to allow a refrigerant supplied from the outside to selectively flow therein. | 10-22-2015 |
20150267291 | PURGE CHAMBER, AND SUBSTRATE-PROCESSING APPARATUS INCLUDING SAME - Provided is a substrate processing apparatus including a process chamber in which a process for processing a substrate are processed, a purge chamber removing contaminants existing on the substrate, and a transfer chamber connected to a side surface of each of the process chamber and the purge chamber, the transfer chamber including a substrate handler transferring the substrate, on which the process is performed, into the purge chamber between the process chamber and the purge chamber, wherein the purge chamber includes a chamber having an inner space and a passage through which the substrate is taken in or out of the inner space, a substrate holder on which the substrate is placed, the substrate holder being disposed in the chamber, a gas supply port disposed on a side surface with respect to the passage to supply a gas toward the inner space, and an exhaust port disposed on a side opposite to the gas supply port to discharge the gas within the inner space. | 09-24-2015 |
20150252476 | SUBSTRATE PROCESSING APPARATUS - Provided is a substrate processing apparatus. The substrate processing apparatus in which a process with respect to a substrate is performed includes a main chamber having an opened upper portion, the main chamber having a passage that is defined in a sidewall thereof so that a substrate is accessible, a chamber cover disposed on the opened upper portion of the main chamber to provide a process space, which is sealed from the outside, in which the process is performed, a susceptor plate on which the substrate is placed, the susceptor plate having an inner space with an opened lower portion, and a main heater rotatably disposed in the inner space, the main heater being spaced apart from the susceptor plate to heat the susceptor plate. | 09-10-2015 |
20150228518 | FUME REMOVAL DEVICE AND SUBSTRATE TREATMENT DEVICE - Provided is a substrate processing apparatus. The substrate processing apparatus includes a process unit in which a process for processing substrates is performed, a loadport on which an accommodation container accommodating the substrates is disposed, a frame disposed between the process unit and the loadport to define an inner space, an internal container having an accommodation space communicating with the internal space and an inlet through which the substrates are loaded into or unloaded from the accommodation space, the internal container having a plurality of discharge holes in a rear surface facing the inlet, an external container disposed outside the internal container to define a discharge space communicating with the accommodation space through the discharge holes, an exhaust hole defined in the external container to communicate with the discharge space, and an exhaust line in which an exhaust pump forcibly exhausting the inside of the accommodation space is disposed, the exhaust line being connected to the exhaust hole. | 08-13-2015 |
20150211116 | SUBSTRATE PROCESSING DEVICE - Provided is a substrate processing apparatus. The substrate processing apparatus in which a process with respect to a substrate is performed includes a main chamber having an opened upper side, the main chamber including a passage defined in a side thereof so that the substrate is loaded or unloaded through the passage, a susceptor disposed within the main chamber to allow the substrate to be placed thereon, a chamber cover disposed on the opened upper side of the main chamber, the chamber cover including an upper installation space defined above the susceptor and a gas supply passage disposed outside the upper installation space, a heating block disposed in the upper installation space to heat the substrate, and a gas supply port connected to the gas supply passage to supply a process gas into the process space. | 07-30-2015 |
20150191821 | SUBSTRATE PROCESSING DEVICE - Provided is a substrate processing apparatus. The substrate processing apparatus in which a process with respect to a substrate is performed includes a chamber body having an opened upper side, the chamber body including a passage defined in a side thereof so that the substrate is loaded or unloaded through the passage, a chamber cover disposed on the chamber body to cover the opened upper side of the chamber body, the chamber cover providing a process space in which the process with respect to the substrate is performed, a susceptor disposed within the process space to heat the substrate, and a heating block disposed on an upper or lower portion of the passage to preliminarily heat the substrate loaded through the passage. | 07-09-2015 |
20150122177 | APPARATUS FOR PROCESSING SUBSTRATE - Provided is a substrate processing apparatus. The substrate processing apparatus includes a chamber having an opened upper side, the chamber having a passage, through which a substrate is accessible, in a side thereof, a chamber cover covering the opened upper side of the chamber to provide an inner space in which a process with respect to the substrate is performed, the chamber cover having a gas supply hole passing through a ceiling wall thereof, an upper antenna disposed on an upper central portion of the chamber cover to generate an electric field in a central portion of the inner space, the upper antenna generating plasma by using a source gas supplied into the inner space, a side antenna disposed to surround a side portion of the chamber cover to generate an electric field in an edge portion of the inner space, the side antenna generating plasma by using the source gas supplied into the inner space, and a gas supply tube connected to the gas supply hole to supply the source gas into the inner space. The gas supply hole is disposed outside the upper antenna. | 05-07-2015 |
20150044622 | HEATER MOVING TYPE SUBSTRATE PROCESSING APPARATUS - Provided is a substrate processing apparatus. The substrate processing apparatus includes a chamber providing an inner space in which a process with respect to a substrate is performed, a heating plate on which the substrate is placed, the heating plate being fixedly disposed within the chamber, a heater spaced from a lower portion of the heating plate to heat the heating plate, and a lift module lifting the heater. | 02-12-2015 |
20150013909 | SUBSTRATE PROCESSING APPARATUS INCLUDING AUXILIARY GAS SUPPLY PORT - Provided is a substrate processing apparatus. The substrate processing apparatus in which processes with respect to substrates are performed, the substrate processing apparatus includes a lower chamber having an opened upper side, the lower chamber including a passage allowing the substrates to pass therethrough in a side thereof, an external reaction tube closing the opened upper side of the lower chamber to provide a process space in which the processes are performed, an internal reaction tube disposed within the external reaction tube, the internal reaction tube being disposed around a substrate holder placed in the process position to define a reaction region with respect to the substrates, the substrate holder on which the one or more substrates are vertically stacked, the substrate holder being movable between a stacking position in which the substrates are stacked within the substrate holder and a process position in which the processes with respect to the substrates are performed, at least one supply nozzle disposed along an inner wall of the external reaction tube, the at least one supply nozzle having a supply hole for discharging a reaction gas, and at least one exhaust nozzle disposed along the inner wall of the external reaction tube, the at least one exhaust nozzle having an exhaust hole for suctioning an non-reaction gas and byproducts within the process space. The lower chamber includes an auxiliary gas supply port connected to the stacking space defined inside the lower chamber. | 01-15-2015 |
20140348617 | SUBSTRATE PROCESSING APPARATUS INCLUDING HEAT-SHIELD PLATE - Provided is a substrate processing apparatus. The substrate processing apparatus in which processes with respect to substrates are performed includes a lower chamber having an opened upper side, the lower chamber including a passage allowing the substrates to pass therethrough in a side thereof, an external reaction tube closing the opened upper side of the lower chamber to provide a process space in which the processes are performed, an internal reaction tube disposed within the external reaction tube, the internal reaction tube being disposed around a substrate holder placed in the process position to define a reaction region with respect to the substrates, a heater disposed outside the external reaction tube to heat the process space, the substrate holder on which the one or more substrates are vertically stacked, the substrate holder being movable between a stacking position in which the substrates are stacked within the substrate holder and a process position in which the processes with respect to the substrates are performed, and a heat-shield plate disposed under the substrate holder to close an opened lower side of the internal reaction tube when the substrate holder is disposed at the process position. | 11-27-2014 |
20140345801 | APPARATUS FOR PROCESSING SUBSTRATE FOR SUPPLYING REACTION GAS HAVING PHASE DIFFERENCE - Provided is a substrate processing apparatus. The substrate processing apparatus in which processes with respect to substrates are performed includes a lower chamber having an opened upper side, the lower chamber including a passage allowing the substrates to pass therethrough in a side thereof, an external reaction tube closing the opened upper side of the lower chamber to provide a process space in which the processes are performed, a substrate holder on which the one ore more substrates are vertically stacked, the substrate holder being movable between a stacking position in which the substrates are stacked within the substrate holder and a process position in which the processes with respect to the substrates are performed, and a gas supply unit disposed inside the external reaction tube to supply a reaction gas into the process space, the gas supply unit forming a flow of the reaction gas having different phase differences in a vertical direction. | 11-27-2014 |
20140345528 | SUBSTRATE PROCESSING APPARATUS INCLUDING PROCESSING UNIT - Provided is a substrate processing apparatus. The substrate processing apparatus in which a process with respect to substrates is performed includes a lower chamber having an opened upper portion, the lower chamber having a passage, through which the substrates are accessible, in a side thereof, an external reaction tube closing the opened upper portion of the lower chamber to provide a process space in which the process is performed, a substrate holder on which the one or more substrates are vertically stacked, the substrate holder being movable between a stacking position at which the substrates are stacked within the substrate holder and a process position at which the process with respect to the substrates is performed, a gas supply unit supplying a reaction gas into the process space, and a processing unit disposed outside the external reaction tube to activate the reaction gas, thereby performing the process with respect to the substrates. | 11-27-2014 |
20140341682 | SUBSTRATE PROCESSING MODULE AND SUBSTRATE PROCESSING APPARATUS INCLUDING THE SAME - Provided is a substrate processing module. The substrate processing module includes a lower chamber having an opened upper portion, the lower chamber having a passage, through which a substrate is accessible, in a side thereof, a plurality of susceptors on which the substrate is placed on each of top surfaces thereof, the plurality of susceptors being disposed within the lower chamber and fixedly disposed around a preset center of the lower chamber, a rotation member disposed on the preset center of the lower chamber, the rotation member being rotatable with respect to the preset center, a plurality of holders connected to the rotation member and rotated together with the rotation member, the plurality of holders having at least one seat surface on which the substrate is placed, and a driving module connected to the rotation member, the driving module moving one of the holders to a transfer position corresponding to the passage by driving the rotation member. | 11-20-2014 |
20140331933 | APPARATUS FOR PROCESSING APPARATUS HAVING SIDE PUMPING TYPE - Provided is a substrate processing apparatus. The substrate processing apparatus includes a chamber body having an opened upper side, the chamber body providing an inner space in which a process with respect to a substrate is performed, a chamber lid disposed on an upper portion of the chamber body to close the opened upper side of the chamber body, and a showerhead disposed on a lower portion of the chamber lid to supply a process gas toward the inner space. The chamber body includes at least one convergent port disposed along the inside of a sidewall of the chamber body to allow the process gas within the inner space to converge, a plurality of inner exhaust holes defined in along the sidewall of the chamber body to communicate with the convergent port and the inner space, and a plurality of inner exhaust ports connected to the convergent port. | 11-13-2014 |
20140315375 | SUBSTRATE PROCESSING APPARATUS INCLUDING EXHAUST PORTS AND SUBSTRATE PROCESSING METHOD - Provided is a substrate processing apparatus. The substrate processing apparatus in which processes with respect to substrates are performed includes a lower chamber having an opened upper side, the lower chamber including a passage allowing the substrates to pass therethrough in a side thereof, an external reaction tube closing the opened upper side of the lower chamber to provide a process space in which the processes are performed, a substrate holder on which the one or more substrates are vertically stacked, the substrate holder being movable between a stacking position in which the substrates are stacked within the substrate holder and a process position in which the processes with respect to the substrates are performed, at least one supply nozzle disposed along an inner wall of the external reaction tube, the at least one supply nozzle having a supply hole for discharging a reaction gas, at least one exhaust nozzle disposed along the inner wall of the external reaction tube, the at least one exhaust nozzle having an exhaust hole for suctioning an non-reaction gas and byproducts within the process space, and a rear exhaust line connected to the exhaust nozzle to discharge the non-reaction gas and the byproducts which are suctioned through the exhaust hole. The lower chamber includes an exhaust port connecting the exhaust nozzle to the rear exhaust line and an auxiliary exhaust port connecting a stacking space defined within the lower chamber to the rear exhaust line. | 10-23-2014 |
20140311411 | SHOWERHEAD HAVING COOLING SYSTEM AND SUBSTRATE PROCESSING APPARATUS INCLUDING THE SHOWERHEAD - Provided is a substrate processing apparatus. The substrate processing apparatus includes a chamber body having an opened upper side, the chamber body providing an inner space in which processes with respect to a substrate are performed, a chamber lid disposed on an upper portion of the chamber body to close the opened upper side of the chamber body, and a showerhead disposed on a lower portion of the chamber lid to supply a reaction gas into the inner space. The showerhead includes a flange contacting the chamber lid, the flange having a passage recessed from a top surface of the flange to allow a refrigerant to flow therein, and a flat plate disposed inside the flange, the flat plate having at least one injection hole for injecting the reaction gas in a thickness direction thereof. | 10-23-2014 |
20140261186 | METHOD AND APPARATUS FOR MANUFACTURING THREE-DIMENSIONAL-STRUCTURE MEMORY DEVICE - Provided is a method of manufacturing a memory device having a 3-dimensional structure, which includes alternately stacking one or more dielectric layers and one or more sacrificial layers on a substrate, forming a through hole passing through the dielectric layers and the sacrificial layers, forming a pattern filling the through hole, forming an opening passing through the dielectric layers and the sacrificial layers, and supplying an etchant through the opening to remove the sacrificial layers. The stacking of the dielectric layers includes supplying the substrate with one or more gases selected from the group consisting of SiH | 09-18-2014 |
20140209024 | EQUIPMENT FOR MANUFACTURING SEMICONDUCTOR - Provided is an equipment for manufacturing a semiconductor. The equipment for manufacturing a semiconductor includes a cleaning chamber in which a cleaning process is performed on substrates, an epitaxial chamber in which an epitaxial process for forming an epitaxial layer on each of the substrates is performed, a buffer chamber having a storage space for storing the substrates, and a transfer chamber to which the cleaning chamber, the buffer chamber, and the epitaxial chamber are connected to side surfaces thereof, the transfer chamber comprising a substrate handler for transferring the substrates between the cleaning chamber, the buffer chamber, and the epitaxial chamber. The substrate handler successively transfers the substrates, on which the cleaning process is completed, into the buffer chamber, transfers the substrates stacked within the buffer chamber the epitaxial chamber, and successively transfers the substrates, on which the epitaxial layers are respectively formed, into the buffer chamber. | 07-31-2014 |
20140202388 | SHOWER HEAD UNIT AND CHEMICAL VAPOR DEPOSITION APPARATUS - A chemical vapor deposition apparatus comprises a chamber, a chamber lead having a gas in port configured to receive a reaction gas, the chamber lead connected to a top surface of the chamber to seal up the chamber, a shower head connected to the chamber lead, the shower head having a plurality of spray holes separated from each other for spraying the reaction gas onto the surface of a wafer in the chamber, and a protrusion surrounding the spray holes on the bottom surface of the shower head so that an induction groove is provided inside the protrusion, wherein the plurality of spray holes have a plurality of main holes and a plurality of supplementary holes, each of the main holes is uniformly arranged in each corner of a square-grid pattern across the shower head and each of the supplementary holes is disposed at each centerpoint of the square-grid pattern. | 07-24-2014 |
20140190410 | EQUIPMENT FOR MANUFACTURING SEMICONDUCTOR - Provided is an equipment for manufacturing a semiconductor. The equipment for manufacturing a semiconductor includes a cleaning chamber in which a cleaning process is performed on substrates, an epitaxial chamber in which an epitaxial process for forming an epitaxial layer on each of the substrates is performed, and a transfer chamber to which the cleaning chamber and the epitaxial chamber are connected to sides surfaces thereof, the transfer chamber including a substrate handler for transferring the substrates, on which the cleaning process is completed, into the epitaxial chamber. | 07-10-2014 |
20140174357 | EQUIPMENT FOR MANUFACTURING SEMICONDUCTOR - Provided is an equipment for manufacturing a semiconductor. The equipment for manufacturing a semiconductor includes a cleaning chamber in which a cleaning process is performed on substrates, an epitaxial chamber in which an epitaxial process for forming an epitaxial layer on each of the substrates is performed, and a transfer chamber to which the cleaning chamber and the epitaxial chamber are connected to sides surfaces thereof, the transfer chamber including a substrate handler for transferring the substrates, on which the cleaning process is completed, into the epitaxial chamber. The cleaning chamber is performed in a batch type with respect to the plurality of substrates. | 06-26-2014 |
20140174356 | SUBSTRATE SUPPORTING UNIT AND SUBSTRATE PROCESSING APPARATUS MANUFACTURING METHOD OF THE SUBSTRATE SUPPORTING UNIT - Provided are a substrate supporting unit and a substrate processing apparatus, and a method of manufacturing the substrate supporting unit. The substrate supporting unit includes a susceptor on which a substrate is placed on a top surface thereof, one or more heat absorbing members which are capable of being converted between a mounted position at which the heat absorbing member is disposed on an upper portion of the susceptor to thermally contact the susceptor and a released position at which the heat absorbing member is separated from the upper portion of the susceptor, the one or more heat absorbing members absorbing heat of the susceptor at the mounted position, and an edge ring having a plurality of fixing slots in which the heat absorbing members are selectively inserted and fixed. | 06-26-2014 |
20140144375 | EQUIPMENT FOR MANUFACTURING SEMICONDUCTOR - Provided is an equipment for manufacturing a semiconductor. The equipment for manufacturing a semiconductor includes a cleaning chamber in which a cleaning process is performed on substrates, an epitaxial chamber in which an epitaxial process for forming an epitaxial layer on each of the substrates is performed, and a transfer chamber to which the cleaning chamber and the epitaxial chamber are connected to sides surfaces thereof, the transfer chamber including a substrate handler for transferring the substrates, on which the cleaning process is completed, into the epitaxial chamber. The cleaning chamber includes a reaction chamber connected to a side surface of the transfer chamber to perform a reaction process on the substrates and a heating chamber connected to a side surface of the transfer chamber to perform a heating process on the substrates. The reaction chamber and the heating chamber are vertically stacked on each other. | 05-29-2014 |
20130186337 | SUBSTRATE PROCESSING DEVICE FOR SUPPLYING REACTION GAS THROUGH SYMMETRY-TYPE INLET AND OUTLET - Provided is a substrate processing apparatus. The substrate processing apparatus includes a chamber where processes with respect to a substrate are carried out, a substrate support on which the substrate is placed, the substrate support being disposed within the chamber, and a showerhead in which an inlet for supplying reaction gas into the chamber and an outlet for discharging the reaction gas supplied into the chamber are symmetrically disposed. The reaction gas flows within the chamber in a direction roughly parallel to that of the substrate. | 07-25-2013 |
20130180453 | SUBSTRATE PROCESSING DEVICE EQUIPPED WITH SEMICIRCLE SHAPED ANTENNA - Provided is a substrate processing apparatus. The substrate processing apparatus includes a chamber where processes with respect to a substrate are carried out, a substrate support on which the substrate is placed, the substrate support being disposed within the chamber, and an antenna disposed in an upper portion of the chamber to form an electric field within the chamber. The antenna includes a first antenna and a second antenna, which are disposed in rotational symmetry with respect to a preset center. The first antenna includes a first inner antenna and a first intermediate antenna which respectively have semi-circular shapes and first and second radii and are respectively disposed on one side and the other side with respect to the preset center line and a first connection antenna connecting the first inner antenna to the first intermediate antenna. The second antenna includes a second intermediate antenna and a second inner antenna which respectively have semi-circular shapes and have first and second radii and are respectively disposed on one side and the other side with respect to the center line and a second connection antenna connecting the second intermediate antenna to the second inner antenna. | 07-18-2013 |
20130178066 | METHOD AND APPARATUS FOR MANUFACTURING THREE-DIMENSIONAL-STRUCTURE MEMORY DEVICE - Provided is a method of manufacturing a memory device having a 3-dimensional structure, which includes alternately stacking one or more dielectric layers and one or more sacrificial layers on a substrate, forming a through hole passing through the dielectric layers and the sacrificial layers, forming a pattern filling the through hole, forming an opening passing through the dielectric layers and the sacrificial layers, and supplying an etchant through the opening to remove the sacrificial layers. The stacking of the dielectric layers includes supplying the substrate with one or more gases selected from the group consisting of SiH | 07-11-2013 |
20130171827 | METHOD AND APPARATUS FOR MANUFACTURING THREE-DIMENSIONAL-STRUCTURE MEMORY DEVICE - A method for manufacturing a memory device having a vertical structure according to one embodiment of the present invention comprises: a step for alternatingly laminating one or more insulation layers and one or more sacrificial layers on a substrate; a step for forming a penetration hole for penetrating the insulation layer and the sacrificial layer; a step for forming a pattern for filling up the penetration hole; a step for forming an opening for penetrating the insulation layer and the sacrificial layer; and a step for removing the sacrificial layer by supplying an etchant through the opening, wherein the step for laminating the insulation layer includes a step for depositing a first silicon oxide film by supplying to the substrate at least one gas selected from the group consisting of SiH | 07-04-2013 |
20130149078 | SUBSTRATE-PROCESSING APPARATUS AND SUBSTRATE-TRANSFERRING METHOD - According to one embodiment of the present invention, a substrate-processing apparatus includes: first and second chambers parallel to each other; a plurality of first lift pins disposed in the first chamber, and supporting a first substrate transferred to the first chamber; a plurality of second lift pins disposed in the second chamber, and supporting a second substrate transferred into the second chamber; and a transfer robot transferring the first and second substrates into the first and second chambers. The transfer robot includes first and second blades that simultaneously elevate to transfer the first and second substrates to the upper sides of the first and second lift pins, respectively. The first and second blades can move to: a moving position higher than the upper ends of the first and second lift pins; a first loading position in which the first blade is lower than the upper ends of the first lift pins and the second blade is higher than the upper ends of the second lift pins; and a second loading position in which the first and second blades are lower than the upper ends of the first and second lift pins. | 06-13-2013 |
20130130480 | METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE - Disclosed is a method for manufacturing a semiconductor device having a multilayer structure. The method for manufacturing a semiconductor device according to the present invention comprises the loading of a substrate into the chamber of a chemical vapor deposition apparatus and the forming of a multilayer structure in which a plurality of doped amorphous silicon layers and a plurality of insulation layers are alternately stacked. Said layers are stacked by alternately and repetitively forming the doped amorphous silicon layer on the substrate by supplying a conductive dopant and silicon precursor into the chamber where the substrate is loaded, and forming the insulation layer containing silicon on the substrate by introducing the silicon precursor and a reaction gas into the chamber where the substrate is loaded. | 05-23-2013 |
20130115783 | METHOD FOR DEPOSITING CYCLIC THIN FILM - Provided is a method of depositing a cyclic thin film that can provide excellent film properties and step coverage. The method comprises the steps of forming a silicon thin film by repeating a silicon deposition step for depositing silicon on a substrate by injecting a silicon precursor into a chamber into which the substrate is loaded and a first purge step for removing a non-reacted silicon precursor and a reacted byproduct from the chamber; and forming the insulating film including silicon from the silicon thin film by forming a plasma atmosphere into the chamber. | 05-09-2013 |
20130101752 | METHOD FOR DEPOSITING CYCLIC THIN FILM - Provided is a method of depositing a cyclic thin film that can provide excellent film properties and step coverage. The method includes the steps of depositing an insulating film by repeatedly performing a deposition step for depositing silicon on a substrate by injecting a silicon precursor into a chamber into which the substrate is loaded, a first purge step for removing a non-reacted silicon precursor and a reacted byproduct from the chamber, a reaction step for forming the deposited silicon as an insulating film including silicon by supplying a first reaction gas into the chamber and a second purge step for removing a non-reacted first reaction gas and a reacted byproduct from the chamber; and densifying the insulating film including silicon by supplying a plasma atmosphere into the chamber. | 04-25-2013 |
20110028001 | SUBSTRATE PROCESSING APPARATUS AND METHOD - Disclosed is a substrate processing apparatus and method. The substrate processing apparatus includes a process chamber ( | 02-03-2011 |
20110021034 | SUBSTRATE PROCESSING APPARATUS AND METHOD - Disclosed is a substrate processing apparatus and method. The substrate processing apparatus includes a chamber ( | 01-27-2011 |
20110014397 | APPARATUS AND METHOD FOR PROCESSING SUBSTRATE - A substrate processing apparatus includes a chamber defining a process space where a process is carried out with respect to a substrate, a first supply member configured to supply a first source gas toward the process space, a plasma source configured to generate an electric field in the process space to create radicals from the first source gas, and a second supply member located below the first supply member for supplying a second source gas toward the substrate. A support member is installed in the chamber. The second supply member has a supply nozzle disposed, such that a lower end of the supply nozzle corresponds to a center of the substrate placed on the support member, for supplying the second source gas toward the center of the substrate. | 01-20-2011 |
20110000618 | APPARATUS AND METHOD FOR PROCESSING SUBSTRATE - A substrate processing apparatus includes a chamber defining a creation space where radicals are created and a process space where a process is carried out with respect to a substrate, a first supply member configured to supply a first source gas into the creation space, an upper plasma source configured to generate an electric field in the creation space to create the radicals from the first source gas, a second supply member configured to supply a second source gas into the process space, and a lower plasma source configured to generate an electric field in the process space. The upper plasma source includes a first segment and a second segment configured to wrap a side of the chamber. The first and second segments are alternately disposed in the vertical direction of the chamber. | 01-06-2011 |
20100330301 | APPARATUS AND METHOD FOR PROCESSING SUBSTRATE - A substrate processing apparatus includes a chamber defining a process space where a process is carried out with respect to a substrate, a first supply member located above the process space for supplying a first source gas toward the process space, a plasma source configured to generate an electric field in the process space to create radicals from the first source gas, and a second supply member configured to supply a second source gas above the substrate. The chamber includes a lower chamber in which a support member configured to allow the substrate to be placed thereon is installed. The lower chamber is open at a top thereof. The second supply member is installed at an upper end of the lower chamber for supplying the second source gas in a direction generally parallel to the substrate placed on the support member. The second source gas may be a silicon-containing gas. | 12-30-2010 |
20100319855 | SUBSTRATE SUPPORTING UNIT, SUBSTRATE PROCESSING APPARATUS, AND METHOD OF MANUFACTURING SUBSTRATE SUPPORTING UNIT - Disclosed are a substrate supporting unit, a substrate processing apparatus, and a method of manufacturing the substrate supporting unit. The substrate supporting unit includes a susceptor ( | 12-23-2010 |
20100319621 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus includes a chamber providing an interior space where a process is performed upon a target; and a plasma generating unit generating an electric field in the interior space to generate plasma from a source gas supplied to the interior space. The plasma generating unit includes an upper source disposed substantially parallel to an upper surface of the chamber, an upper generator connected to the upper source to supply a first current to the upper source, a lateral source surrounding a lateral side of the chamber, and a lateral generator connected to the lateral source to supply a second current to the lateral source. The plasma generating unit further includes an upper matcher disposed between the upper generator and the upper source, and a lower matcher disposed between the lateral generator and the lateral source. | 12-23-2010 |
20100276393 | PLASMA PROCESSING APPARATUS AND METHOD - A plasma processing apparatus includes a chamber to provide an inner area in which a process is performed upon an object, and a plasma source to generate an electric field in the inner area and thereby to generate plasma from a source gas supplied in the inner area, wherein the plasma source comprises a top source provided in the top of the chamber, and a side source encompassing the side of the chamber and allowing current to flow from the one side of the chamber to the other side thereof. | 11-04-2010 |
20100206231 | EXHAUST UNIT, EXHAUST METHOD USING THE EXHAUST UNIT, AND SUBSTRATE PROCESSING APPARATUS INCLUDING THE EXHAUST UNIT - A substrate processing apparatus includes a chamber having an inner space where a process is carried out with respect to a substrate and an exhaust unit for exhausting substance in the inner space to the outside. The exhaust unit includes a first exhaust plate located at an upstream of an exhaust path of the substance, the first exhaust plate having first exhaust holes, and a second exhaust plate located at a downstream of the exhaust path, the first exhaust plate having second exhaust holes. The first exhaust plate is disposed outside a support member, and the second exhaust plate is disposed below the first exhaust plate generally in parallel to the first exhaust plate. The exhaust unit further includes first covers for selectively opening and closing the first exhaust holes and second covers for selectively opening and closing the second exhaust holes. | 08-19-2010 |
20100196625 | SHOWERHEAD, SUBSTRATE PROCESSING APPARATUS INCLUDING THE SHOWERHEAD, AND PLASMA SUPPLYING METHOD USING THE SHOWERHEAD - A showerhead includes a first ring having an inner spray port formed therein, a second ring configured to surround the first ring, the second ring being disposed outside the first ring such that the second ring is spaced apart from the first ring, and a connection member for interconnecting the first ring and the second ring. An outer spray port is formed between the first ring and the second ring. The showerhead further includes a third ring disposed in the inner spray port formed in the first ring and a fourth ring disposed in the outer spray port formed between the first ring and the second ring. The third ring has an innermost spray port formed therein, and the fourth ring has an outermost spray port formed at the outside thereof. | 08-05-2010 |
20100175622 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus includes a chamber defining an inner space where a process is carried out with respect to a substrate, a support member disposed in the chamber for supporting the substrate, and a guide tube disposed above the support member for guiding plasma generated in the inner space to the substrate on the support member. The guide tube is configured in the shape of a cylinder having a sectional shape substantially corresponding to the shape of the substrate, and the guide tube discharges the plasma introduced through one end thereof to the support member through the other end thereof. The chamber includes a process chamber in which the support member is disposed and a generation chamber disposed above the process chamber. The process is carried out by the plasma in the process chamber, and the plasma is generated by a coil in the generation chamber. | 07-15-2010 |
20100035417 | METHOD OF FABRICATING POLYCRYSTALLINE SILICON THIN FILM - The present invention relates to a method of depositing a polycrystalline silicon thin film within a single chamber through a chemical vapor deposition (CVD) process employing a single wafer technique. Particularly, a fine crystalline structure of the polycrystalline silicon thin film is formed in a columnar shape by using SiH | 02-11-2010 |
20090218331 | PARTITION-TYPE HEATING APPARATUS - A partition-type heating apparatus has advantageous effects in that a material to be heated, i.e., a reaction gas used in a chemical vapor deposition (CVD) process, is pre-heated and the pre-heated reaction gas flows through a flow channel defined by the vertical and horizontal partitions so that the flowing reaction gas is heated by the transfer of heat generated from a hot wire during the flow of the reaction gas, thereby securing heating performance required for a small-sized heating apparatus. | 09-03-2009 |