ESPROS Photonics AG Patent applications |
Patent application number | Title | Published |
20140160459 | TOF DISTANCE SENSOR AND METHOD FOR OPERATION THEREOF - A TOF distance sensor is proposed, for measuring a distance from an object, comprising an electronics apparatus for generating a modulation signal and for generating four correlation signals, which are phase shifted with respect to one another and which have the same period as the modulation signal; a radiation source for emitting radiation, which is modulated by the modulation signal; a reception apparatus, which has a predetermined spatial relationship with respect to the radiation source, for receiving radiation reflected by the object; a correlation apparatus for correlating the received radiation or a corresponding variable with respectively one of the four correlation signals in order to form four corresponding correlation values; a difference-forming apparatus for forming two difference correlation values from the difference between respectively two of the correlation values; a calculation apparatus embodied to calculate the distance with a predetermined linear dependence on the two difference correlation values. | 06-12-2014 |
20130187031 | SENSOR APPARATUS, PRODUCTION METHOD AND DETECTION APPARATUS - A sensor apparatus including at least one analog and one digital circuit component and an analog/digital converter for converting analog signals of the analog circuit component into digital signals for the digital circuit component, and vice versa, wherein the analog circuit component and the digital circuit components include at least one module for electronically implementing a function, and wherein one of the modules of the analog circuit component is embodied as a sensor device for detecting optical radiation and one of the modules of the digital circuit component is embodied as a signal processing device for processing digital signals. In order to enable improved integration into application-based sensor devices, the circuit components including the analog/digital converter are integrated as an integrated circuit in a chip and the chip is manufactured as a semiconductor structure using 1-poly technology. | 07-25-2013 |
20130037899 | SEMICONDUCTOR STRUCTURE FOR PHOTON DETECTION - A semiconductor structure for photon detection, comprising a substrate composed of a semiconductor material having a first doping, a contact region fitted at the frontside of the substrate, a bias layer composed of a semiconductor material having a second doping, which is arranged on the backside of the substrate at a distance from the contact region, wherein the contact region at least partly lies opposite the bias layer, such that an overlap region is present in a lateral direction, a guard ring, which is arranged at the frontside of the substrate and surrounds the contact region, wherein a reverse voltage can be applied between the contact region and the guard ring. In order to enable more cost-effective production, the overlap region has a lateral extent amounting to at least one quarter of the distance between contact region and bias layer. | 02-14-2013 |