Epistar Corporation Patent applications |
Patent application number | Title | Published |
20150348822 | SUSCEPTOR - A susceptor, comprises: a base part; multiple holders distributed on the base part for accommodating wafers; an inner ring connected to the base part; and an outer ring detachably connected to the base part and separated from the inner ring; wherein the inner ring and the outer ring separate the holders from one another. | 12-03-2015 |
20150325744 | METHOD OF MANUFACTURING OPTOELECTRONIC ELEMENT HAVING ROUGH SURFACE - A method of forming a rough surface includes: providing an article having a top surface, forming a plurality of agglomerated grains on the top surface by a deposition process, and patterning the top surface to form a rough surface by using the plurality of agglomerated grains as a mask. | 11-12-2015 |
20150311416 | LIGHT-EMITTING ELEMENT AND THE LIGHT-EMITTING ARRAY HAVING THE SAME - A light-emitting element includes a light-emitting structure, a plurality of first contact portions disposed separately on the light-emitting structure, and a plurality of reflective portions disposed separately among the first contact portions. | 10-29-2015 |
20150294799 | ELECTRODE FOR ENERGY STORAGE DEVICE AND ENERGY STORAGE DEVICE USING THE SAME - Disclosed are an electrode for an energy storage device and an energy storage device using the same. The electrode for an energy storage device comprises a porous electrical conductive material and a plurality of Co—Mn composite oxide nanowires on the porous electrical conductive material. The energy storage device comprises an anode comprising the aforementioned electrode; a cathode; and an electrolyte between the anode and the cathode. | 10-15-2015 |
20150270432 | LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a light-emitting device comprising the steps of: providing a substrate; forming a semiconductor epitaxial stack on the substrate; and forming multiple isolation trenches in the semiconductor epitaxial stack by using a laser beam irradiating the semiconductor epitaxial stack to define multiple light-emitting diode units wherein partial of the substrate is exposed by the isolation trenches. | 09-24-2015 |
20150259827 | SUSCEPTOR - A susceptor, comprises: a bottom structure comprising atop surface; and a top structure detachably attached to the bottom structure comprising: a central part; and a peripheral part surrounding the central part and comprising a lower surface facing the bottom structure, wherein an outermost part of the lower surface distal from the central part is exposed and a part of the lower surface between the outermost part of the lower surface and the central part is connected to the top surface. | 09-17-2015 |
20150243845 | LIGHT-EMITTING DEVICE - A light-emitting element comprises a light-emitting stacked structure. The light-emitting stacked structure comprises a first type semiconductor layer; an active layer on the first type semiconductor layer; a second type semiconductor layer on the active layer; and a superlattice structure between the active layer and the second type semiconductor layer, comprising a first doped nitride layer and a first undoped nitride layer on the first doped nitride layer. | 08-27-2015 |
20150236205 | LIGHT-EMITTING DEVICE - A light-emitting device comprises: a light-emitting stack comprising a first side, a second side opposite to the first side, and an upper surface between the first side and the second side; a first electrode pad formed on the upper surface; a second electrode pad formed on the upper surface, and the first electrode pad is closer to the first side than the second electrode pad; and a first extension electrode comprising a first section extended from the first electrode pad toward the second electrode pad, and a second section extended from the first electrode pad toward the first side. | 08-20-2015 |
20150236204 | LIGHT-EMITTING DEVICE - A light-emitting device comprises: a light-emitting semiconductor stack; and an electrode on the light-emitting semiconductor stack comprising a base material and a contact material different from the base material and capable of forming an ohmic contact with semiconductor material; wherein the contact material is distributed over a part of the light-emitting device and has a largest concentration in the electrode. | 08-20-2015 |
20150228861 | LIGHT EMITTING DEVICE - A method for manufacturing a light-emitting device, comprising steps of: providing a semiconductor stack; forming an first conductive oxide layer on the semiconductor stack, wherein first conductive oxide layer has a top surface opposite to the semiconductor stack, and the top surface comprises a first region and a second region; forming a first layer contacting the first region of the top surface, wherein the first layer comprises a metal material; providing a first solution; forming a second layer by a reaction between the first solution, the first layer and the first conductive oxide layer; and removing the second layer to reveal the first region. | 08-13-2015 |
20150222094 | LIGHT-EMITTING ARRAY - A light-emitting array comprises a plurality of light-emitting elements, wherein each of the plurality of light-emitting elements comprises a first semiconductor stack; and a plurality of bridge structures connected to the plurality of light-emitting elements, wherein the plurality of light-emitting elements are spaced apart by the plurality of bridge structures, wherein each of the plurality of bridge structures comprise a second semiconductor stack which has the same epitaxial stack as the first semiconductor stack. | 08-06-2015 |
20150207035 | Light-Emitting Element Having a Tunneling Structure - A light-emitting element includes a first light-emitting stacked structure including a first active layer; and a tunneling structure on the light-emitting stacked structure including a first doped semiconductor layer; a first undoped semiconductor layer on the first doped semiconductor layer; a second undoped semiconductor layer on the first undoped semiconductor layer; a third undoped semiconductor layer between the first undoped semiconductor layer and the second undoped semiconductor layer, wherein the third undoped semiconductor layer includes a material different from that of the first undoped semiconductor layer; and a second doped semiconductor layer on the second undoped semiconductor layer, having a different conductivity from that of the first doped semiconductor layer; wherein the tunneling structure has a polarization field enhanced by the third undoped semiconductor layer. | 07-23-2015 |
20150200331 | LIGHT-EMITTING DEVICE AND THE MANUFACTURING METHOD THEREOF - A manufacturing method of a light-emitting device is disclosed. The method provides for patterning a semiconductor stack on a first substrate in order to form multiple light-emitting mesas. A second substrate is then bonded to the multiple light-emitting mesas and a reflective structure is formed on the first substrate. A metal layer is then applied on the reflective structure and the metal layer is patterned to form multiple metal mesas corresponding to the multiple light-emitting mesas, with a portion of the reflective structure being exposed. | 07-16-2015 |
20150198323 | LIGHT-EMITTING DEVICE - Disclosed is a lighting-emitting device comprising a first light-emitting chip emitting a first light; a second light-emitting chip emitting a second light having a wavelength longer than that of the first light; and a heat sink nearer the second light-emitting chip than the first light-emitting chip, wherein the light-emitting device is operated from a cold state to a hot state, and a temperature of the second light-emitting chip is lower than that of the first light-emitting chip at the hot state. | 07-16-2015 |
20150155433 | LIGHT-EMITTING DEVICE - A light-emitting device includes: a Distributed Bragg reflector comprising alternate first semiconductor layers and second semiconductor layers, wherein each first semiconductor layer comprises a low-refractive-index part having a depth; and a light-emitting semiconductor stack associated with the Distributed Bragg reflector; wherein the depths of the low-refractive-index parts of the first semiconductor layers are gradually changed in a direction toward the light-emitting semiconductor stack. | 06-04-2015 |
20150144975 | LIGHT-EMITTING DEVICE - A light-emitting device comprises a substrate; and a semiconductor stack comprising a III-V group material formed on the substrate, wherein the substrate comprises a first amorphous portion adjacent to the semiconductor stack, and a portion having a material different from that of the first amorphous portion and away from the semiconductor stack, wherein the first amorphous portion has a first refractive index, the portion has a second refractive index, and the first refractive index is higher than the second refractive index and lower than a refractive index of the semiconductor stack. | 05-28-2015 |
20150137179 | POWER DEVICE - A power device disclosed herein comprises a substrate, a first semiconductor layer formed on the substrate, a second semiconductor layer formed on the first semiconductor layer and comprising a first element of group III, a third semiconductor layer formed on the second semiconductor layer and a plurality of first interlayers formed in the third semiconductor layer and comprising a second element of III group. The first element of III group and the second element of III group are the same. The second semiconductor layer and the plurality of first interlayers are doped with carbon. | 05-21-2015 |
20150060909 | LIGHT-EMITTING DEVICE AND THE MANUFACTURING METHOD THEREOF - A light-emitting device comprises: a first semiconductor layer; a transparent conductive oxide layer including a diffusion region having a first metal material and a non-diffusion region devoid of the first metal material, wherein the non-diffusion region is closer to the first semiconductor layer than the diffusion region; and a metal layer formed on the transparent conductive oxide layer, wherein the metal layer is pervious to a light emitted from the active layer and comprises a pattern. | 03-05-2015 |
20150054034 | HIGH ELECTRON MOBILITY TRANSISTOR - A high electron mobility transistor comprises a substrate, an epitaxial stack arranged above the substrate and having a first region and a second region surrounding the first region, a matrix electrode structure arranged in the first region, and a plurality of first bridges electrically connecting the plurality of second electrodes. The matrix electrode structure comprises a plurality of first electrodes arranged on the epitaxial stack and a plurality of second electrodes arranged on the epitaxial stack and adjacent to the plurality of first electrodes. One of the bridges is arranged between two of the second electrodes and crossed over one of the first electrodes. | 02-26-2015 |
20150048418 | SEMICONDUCTOR POWER DEVICE - A semiconductor power device, comprising: a substrate; a first semiconductor layer with a first lattice constant formed on the substrate, wherein the first semiconductor layer comprises a first group III element; a first grading layer formed on the first semiconductor layer and comprising a first portion; a second semiconductor layer with a second lattice constant formed on the first grading layer, wherein the second semiconductor layer comprises a second group III element; and a first interlayer formed in the first grading layer and adjacent to the first portion of the first grading layer, wherein a composition of the first interlayer is different from that of the first portion, and the first grading layer comprises the first group III element and the second group III element, and concentrations of both the first group III element and the second group III element in the first grading layer are gradually changed. | 02-19-2015 |
20150034996 | LIGHT-EMITTING DEVICE - A light-emitting device comprises a substrate; a first semiconductor stack formed on the substrate; a connecting part formed on the first semiconductor stack; and a plurality of droplets formed near the connecting part, wherein the plurality of droplets comprises a material same as that of the connecting part. | 02-05-2015 |
20150034155 | OPTOELECTRONIC DEVICE AND THE MANUFACTURING METHOD THEREOF - An optoelectronic device includes: a semiconductor stack including an upper surface and a side surface; a first electrode formed on the upper surface of the semiconductor stack; a first anti-reflection structure formed on the first electrode and the upper surface; and a second anti-reflection structure different from the first anti-reflection structure formed on the side surface. | 02-05-2015 |
20140367693 | LIGHT-EMITTING DEVICE AND THE MANUFACTURING METHOD THEREOF - A light-emitting device, comprising: a substrate comprising an upper surface; an ion implantation region in the substrate; a semiconductor layer formed on the upper surface; a light-emitting stack formed on the semiconductor layer; and multiple cavities formed between the semiconductor layer and the upper surface in accordance with the ion implantation region. | 12-18-2014 |
20140356993 | LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a light-emitting device, comprises the steps of: providing a carrier; performing a coating step comprises coating a film on the carrier; performing a baking step comprises baking the film at a first temperature; and forming a thick film by repeating the coating step and the baking step a predetermined number of times. | 12-04-2014 |
20140346544 | Light-Emitting Element Having a Reflective Structure with High Efficiency - A light-emitting element includes a reflective layer; a first transparent layer on the reflective layer; a light-emitting stack having an active layer on the first transparent layer; and a cavity formed in the first transparent layer. | 11-27-2014 |
20140319559 | LIGHT-EMITTING DEVICE AND THE MANUFACTURING METHOD THEREOF - A light-emitting device includes: a light-emitting stack having an upper surface having a first surface roughness less than 0.2 nm; and an as-cut wafer comprising an irregularly uneven surface facing the light-emitting stack and having a second surface roughness greater than 0.5 μm. | 10-30-2014 |
20140319558 | LIGHT EMITTING DEVICE - This disclosure discloses a light-emitting device. The light-emitting device comprise a light-emitting stack having a first-type semiconductor layer, a second-type semiconductor layer, and an active formed between the first-type semiconductor layer and the second-type semiconductor layer and emitting a light; and a reflective structure formed on the first-type semiconductor layer and having a first interface and a second interface; wherein the critical angle of the light at the first interface is larger than that at the second interface; and wherein the reflective structure ohmically contacts the first-type semiconductor layer at the first interface. | 10-30-2014 |
20140312370 | OPTOELECTRONIC DEVICE - An optoelectronic device comprising a first semiconductor layer having a first lattice constant; a second semiconductor layer having a second lattice constant, wherein the second lattice constant is smaller than the first lattice constant; and a first buffer layer formed between the first semiconductor layer and the second semiconductor layer, wherein a lattice constant of one side of the first buffer layer near the second semiconductor layer is smaller than the second lattice constant. | 10-23-2014 |
20140306253 | Light Emitting Device - This disclosure relates to a light-emitting apparatus comprising a submount, a chip carrier formed on the submount, a light-emitting chip formed on the chip carrier, a reflecting cup formed on the submount and enclosing the light-emitting chip and the chip carrier, and a transparent encapsulating material for encapsulating the light-emitting chip. | 10-16-2014 |
20140299901 | LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF - A light-emitting diode, comprising: a substrate, the substrate comprising an upper surface, a bottom surface opposite to the upper surface, and a side surface; a first type semiconductor layer on the upper surface, wherein the first type semiconductor layer comprises a first portion and a second portion, and the second portion comprises an edge surrounding the first portion; a light-emitting layer on the first portion; and a second type semiconductor layer on the light-emitting layer, wherein the second portion comprising a first surface and a second surface, and a first distance is between the first surface and the upper surface, and a second distance is between the second surface and the upper surface and is smaller than the first distance; wherein the first surface is rougher than the second surface, and the second surface is located at the edge. | 10-09-2014 |
20140295588 | METHOD OF FORMING LIGHT-EMITTING DIODE - A method of forming a light-emitting diode includes: providing a substrate having one or more first openings passing through the substrate; forming a sacrificial layer on the substrate; forming an epitaxial layer on the sacrificial layer; connecting a supporting substrate with the epitaxial layer; and separating the substrate from the epitaxial layer by selectively etching the sacrificial layer. | 10-02-2014 |
20140273320 | Semiconductor Light-Emitting Device with a Protection Layer and the Manufacturing Method Thereof - The present application discloses a method for making a light-emitting device comprising steps of: providing a light-emitting unit comprising an epitaxial structure; providing a protection layer; connecting the light-emitting unit with the protection layer by a second connecting layer; providing a heat dispersion substrate; and connecting the heat dispersion substrate with the protection layer by a first connecting layer. | 09-18-2014 |
20140264411 | LIGHT EMITTING DEVICE - This disclosure discloses a light-emitting chip comprises: a light-emitting stack, having a side wall, comprising an active layer emitting light; and a light-absorbing layer having a first portion surrounding the side wall and being configured to absorb 50% light toward the light-absorbing layer. | 09-18-2014 |
20140264390 | OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method of fabricating an epitaxial device, comprising: providing a substrate having a first surface and a normal direction; epitaxially forming a first transition layer in a first temperature on the first surface of the substrate and in-situ incorporating a porogen into the first transition layer; and adjusting the first temperature to a second temperature to burn out the porogen from the first transition layer to form a hollow component inside the first transition layer. | 09-18-2014 |
20140264326 | FIELD EFFECT TRANSISTOR - A FET disclosed herein comprises a substrate, a first semiconductor layer disposed over the substrate, a second semiconductor layer disposed over the first semiconductor layer, wherein an interface between the first semiconductor layer and the second semiconductor layer has a two-dimensional electron gas. The E-mode FET further comprises a p+ III-V semiconductor layer disposed over the second semiconductor layer and a depolarization layer disposed between the second semiconductor layer and the p+ III-V semiconductor layer. | 09-18-2014 |
20140234997 | Light-Emitting Device - This disclosure discloses a light-emitting device, comprising a substrate having a first major surface and a second major surface; a plurality of light-emitting stacks on the first major surface; and at least one electronic device on the second major surface, wherein the light-emitting stacks are electrically connected to each other in series via a first electrical connecting structure; the electronic device are electrically connected to the light-emitting stacks via a second electrical connecting structure. | 08-21-2014 |
20140217359 | Light-Emitting Apparatus - The present application discloses a light-emitting apparatus comprising a first light-emitting semiconductor stack, a first intermediate layer formed on the first light-emitting semiconductor stack and a second light-emitting semiconductor stack formed on the first intermediate layer. The first intermediate layer comprises a first conductive semiconductor layer, a second conductive semiconductor layer and an intermediate region. The intermediate region has a discontinuous structure located between the first conductive semiconductor layer and the second conductive semiconductor layer. | 08-07-2014 |
20140217358 | LIGHT-EMITTING DIODE AND THE MANUFACTURE METHOD OF THE SAME - This application discloses a light-emitting diode comprising a first semiconductor layer, an active layer on the first semiconductor layer, a second semiconductor layer on the active layer, and a semiconductor contact layer on the second semiconductor layer. The second semiconductor layer comprises a first sub-layer and a second sub-layer formed above the first sub-layer, wherein the material of the second sub-layer comprises Al | 08-07-2014 |
20140211475 | LIGHT BULB - A light bulb includes: a light-emitting module; a heat-dissipation carrier including a first surface and a second surface opposite to the first surface, disposed under the light-emitting module for conducting heat generated by the light-emitting module away from the light-emitting module; and a heat radiator disposed above the heat-dissipation carrier for radiating heat away from the heat-dissipation carrier. | 07-31-2014 |
20140209949 | LIGHT-EMITTING ELEMENT COMPRISING A REFLECTIVE STRUCTURE WITH HIGH EFFICIENCY - A light-emitting element, comprises: a substrate; a light-emitting semiconductor stack over the substrate and comprising an active layer; and a Distributed Bragg reflective unit under the substrate comprising a first Distributed Bragg reflective structure under the substrate and comprising a first number of pairs of alternately stacked first sub-layers and second sub-layers, and a second Distributed Bragg reflective structure under the first Distributed Bragg reflective structure and comprising a second number of pairs of alternately stacked third sub-layers and fourth sub-layers, wherein the first number is different from the second number. | 07-31-2014 |
20140206115 | OPTOELECTRONIC SEMICONDUCTOR DEVICE AND THE MANUFACTURING METHOD THEREOF - The present application provides a method of manufacturing an optoelectronic semiconductor device, comprising the steps of: providing a substrate; forming an optoelectronic system on the substrate; forming a barrier layer on the optoelectronic system; forming an electrode on the barrier layer; and annealing the optoelectronic semiconductor device; wherein the optoelectronic semiconductor device has a first forward voltage before the annealing step and has a second forward voltage after the annealing step, and a difference between the second forward voltage and the first forward voltage is smaller than 0.2 Volt. | 07-24-2014 |
20140203322 | Transparent Conductive Structure, Device comprising the same, and the Manufacturing Method thereof - An optical electrical device comprises a base and a transparent conductive structure on the base is disclosed. The base further comprises a light-emitting device and the transparent conductive structure comprises a transparent conductive oxide layer and a passivation layer on the transparent conductive oxide layer. The material of the transparent conductive oxide layer comprises transparent conductive metal oxide, such as ZnO. Furthermore, the transparent conductive metal oxide also comprises impurities, such as a carrier e.g. gallium. | 07-24-2014 |
20140202627 | CHIP SORTING APPARATUS - A method of chip sorting comprises providing a chip holder having a first surface; providing multiple chips on the first surface; providing a chip receiver having a second surface, wherein the second surface faces the first surface; attaching the multiple chips to the second surface; decreasing an adhesion between the multiple chips and the first surface; and separating the multiple chips from the first surface after the step of decreasing the adhesion between the multiple chips and the first surface. | 07-24-2014 |
20140199784 | Method and Apparatus for Making a Semiconductor Device - Disclosed is an apparatus and method for yield enhancement of making a semiconductor device. The apparatus for yield enhancement of making a semiconductor device comprises: a semiconductor device comprising an epitaxial layer in which a defect is included, and a photo-resistor on the epitaxial layer and covering the defect; an image recognition system to detect and identify a location of the defect; and an exposing module comprising a first light source to expose a part of the photo-resistor substantially corresponding to the detected defect identified by the image recognition system. | 07-17-2014 |
20140196782 | METHOD FOR MAKING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MADE THEREBY - Disclosed is a method for yield enhancement of making a semiconductor device. The method for yield enhancement of making a semiconductor device comprises the steps of: providing the semiconductor device comprising an epitaxial layer including a defect; forming a dielectric layer on the epitaxial layer; detecting and identifying a location of the defect; and etching the dielectric layer and leaving a part of the dielectric layer to cover an area substantially corresponding to the detected defect. The semiconductor device made by the method is also disclosed. | 07-17-2014 |
20140193932 | LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a light-emitting device comprises the steps of: providing a first substrate; forming a semiconductor structure on the first substrate, wherein the semiconductor structure comprises a first type semiconductor layer, a second type semiconductor layer, and an active layer between the first type semiconductor layer and the second type semiconductor layer; forming an isolation region through the second type semiconductor and the active layer to separate the semiconductor structure into a first part and a second part on the first substrate; and injecting an electrical current with a current density to the second part to make the second part to be permanently broken-down; wherein after the second part is permanently broken-down, the first part is capable of generating electromagnetic radiation and the second part is incapable of generating electromagnetic radiation. | 07-10-2014 |
20140193232 | APPARATUS FOR FLIPPING SEMICONDUCTOR DEVICE - An apparatus for flipping a semiconductor device comprises a platform comprising a carrier and a roller system, a positioning unit above the platform and comprising a circular opening, and an elevating unit connecting the platform and the positioning unit. | 07-10-2014 |
20140191277 | LIGHT-EMITTING DEVICE - A light-emitting device comprises: a light-emitting semiconductor stack comprising a recess and a mesa, wherein the recess comprises a bottom and the mesa comprises an upper surface; a first insulating layer in the recess and on a part of the upper surface of the mesa; and a first electrode comprising a first layer and a second layer, wherein the first layer comprises a first conductive material and is on another part of the upper surface of the mesa, and the second layer comprises a second conductive material and is on the first layer. | 07-10-2014 |
20140186979 | LIGHT EMITTING DEVICE AND MANUFACTURE METHOD THEREOF - The present disclosure provides a method for forming a light-emitting apparatus, comprising providing a first board having a plurality of first metal contacts, providing a substrate, forming a plurality of light-emitting stacks and trenches on the substrate, wherein the light-emitting stacks are apart from each other by the plurality of the trenches, bonding the light-emitting stacks to the first board, forming an encapsulating material commonly on the plurality of the light-emitting stacks, and cutting the first board and the encapsulating material to form a plurality of chip-scale LED units. | 07-03-2014 |
20140186976 | LIGHT EMITTING DEVICE WITH PLANAR CURRENT BLOCK STRUCTURE - The present disclosure discloses a method of manufacturing a light-emitting device comprising the steps of providing a light-emitting wafer having a semiconductor stacked structure and an alignment mark, sensing the alignment mark, and separating the light-emitting wafer into a plurality of light-emitting diodes and removing the alignment mark accordingly. | 07-03-2014 |
20140183583 | WAVELENGTH CONVERTING MATERIAL AND APPLICATION THEREOF - This disclosure discloses a wavelength converting material. The wavelength converting material comprises a plurality of wavelength converting particles, the wavelength converting particles having an average particle size greater than 5 μm, and wherein each of the wavelength converting particles has a particle size. 90% of the wavelength converting particles have the particle size smaller than a μm; 50% of the wavelength converting particles have the particle size smaller than b μm; and 10% of the wavelength converting particles have the particle size smaller than c μm; wherein (a−c)/b≦0.5. | 07-03-2014 |
20140183581 | LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - A light-emitting device comprises a substrate; a first semiconductor layer formed on the substrate; a light-emitting layer on the first semiconductor layer; and a second semiconductor layer having a rough surface formed on the light-emitting layer, wherein the rough surface comprises a plurality of cavities randomly distributed on the rough surface, and one of the plurality of cavities has a substantially hexagonal shape viewed from top and a curved sidewall viewed from cross-section. | 07-03-2014 |
20140178758 | DEVICE FOR PRODUCING AN ELECTRIC CURRENT AND METHOD FOR MAKING THE SAME - Disclosed is a device for producing an electric current and a method for making the same. The device for producing an electric current, comprising: an anode comprising a stack formed by alternately stacking of at least one Si layer and at least one carbon material layer, and a LiPON layer on the stack; a cathode; and an electrolyte between the anode and the cathode. | 06-26-2014 |
20140175517 | FIELD EFFECT TRANSISTOR - A field effect transistor (FET) disclosed herein comprising a substrate, a C-doped semiconductor layer disposed on the substrate, a channel layer disposed on the C-doped semiconductor layer, and an electron supply layer disposed on the channel layer. The FET further comprises a diffusion barrier layer disposed between the C-doped semiconductor layer and the channel layer, wherein the diffusion barrier layer contacts the channel layer directly. | 06-26-2014 |
20140175493 | Light-Emitting Device - A light-emitting device includes a semiconductor light-emitting stack; a current injected portion formed on the semiconductor light-emitting stack; an extension portion having a first branch radiating from the current injected portion and a second branch extending from the first branch; an electrical contact structure between the second branch and the semiconductor light-emitting stack and having a first width; and a current blocking structure located right beneath the electrical contact structure and having a second width larger than the first width. | 06-26-2014 |
20140167771 | METHOD AND APPARATUS FOR TESTING LIGHT-EMITTING DEVICE - Disclosed is a method for testing a light-emitting device comprising the steps of: providing a light-emitting device comprising a plurality of light-emitting diodes; driving the plurality of the light-emitting diodes with a current; generating an image of the light-emitting device; and determining a luminous intensity of each of the light-emitting diodes; wherein the magnitude of the current is determined such that the current density driving each of the light-emitting diodes is smaller than or equal to 300 mA/mm | 06-19-2014 |
20140167097 | OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method of fabricating an optoelectronic device comprising, providing a substrate, wherein the substrate comprises a first major surface and a second major surface opposite to the first major surface; forming a semiconductor epitaxial stack on the first major surface including a first conductive-type semiconductor layer having a first doping concentration, an active layer, and a second conductive-type semiconductor layer wherein the semiconductor epitaxial stack having four boundaries and a geometric center; and forming a plurality of the hollow components in the first conductive-type semiconductor layer wherein the plurality of the hollow components is formed from the boundary of the semiconductor epitaxial stack to the geometric center of the semiconductor epitaxial stack. | 06-19-2014 |
20140162386 | SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing semiconductor light-emitting devices comprising the steps of: providing a multi-layer semiconductor film comprising a surface; roughening the surface of the multi-layer semiconductor film to form a scattering surface; re-growing a semiconductor layer on the scattering surface; and roughening the semiconductor layer to form a sub-scattering portion on the scattering surface; wherein the sub-scattering portion is structurally smaller than the scattering surface. | 06-12-2014 |
20140159099 | Method of making a light emitting device and light emitting device made thereof - A method of manufacturing a light-emitting device comprises: providing a substrate, forming a light-emitting structure on the substrate, the light-emitting structure having an active layer; forming a protective layer on the light-emitting structure, the protective layer having a first thickness; etching the protective layer such that the protective layer has a second thickness less than the first thickness; and patterning the protective layer. | 06-12-2014 |
20140159091 | LIGHT-EMITTING ELEMENT - A light-emitting element comprises: a light-emitting semiconductor stack comprising a first semiconductor layer; a second semiconductor layer on the first semiconductor layer; and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrode on the first semiconductor layer; a first protection layer on the light-emitting semiconductor stack and comprising a first through hole; and a conductive contact layer on the first protection layer and electrically connected to the first electrode through the first through hole. | 06-12-2014 |
20140159090 | light emitting device - A light-emitting device is disclosed and comprises: a semiconductor stack; a transparent substrate comprising a first material; a bonding layer which bonds the semiconductor stack and the transparent substrate; and a medium in the transparent substrate, the medium comprising a second material different from the first material. | 06-12-2014 |
20140150858 | OPTOELECTRONIC DEVICE AND THE MANUFACTURING METHOD THEREOF - An optoelectronic device comprises an optoelectronic semiconductor stack layer; a conductive layer on the optoelectronic semiconductor stack layer, the conductive layer comprising a top surface, a bottom surface opposite to the top surface, and a side surface; a first barrier layer covering the top surface; a second barrier layer covering the bottom surface; and a first metal oxide layer, wherein the first metal oxide layer covers the side surface, the first barrier layer, and the second barrier layer. | 06-05-2014 |
20140145224 | OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method of fabricating an optoelectronic device, comprising: providing a first substrate; forming an epitaxial stack on the first substrate wherein the epitaxial stack comprising a first conductive-type semiconductor layer, an active layer and a second conductive-type semiconductor layer; etching an upper surface of the second conductive-type semiconductor layer and forming a first texture profile on the upper surface of the second conductive-type semiconductor layer; forming a passivation layer on the upper surface of the second conductive-type semiconductor layer; and etching an upper surface of the passivation layer forming a second texture profile on the upper surface of the passivation layer wherein the first texture profile is different from the second texture profile. | 05-29-2014 |
20140145222 | LED Array - An LED array includes: a first LED unit having a first active layer and a first side; a second LED unit having a second active layer and a second side facing the first side; a trench separating the first LED unit from the second LED unit; and a light-guiding structure formed between the first LED unit and the second LED unite for guiding the light emitted by the first active layer and the second active layer away from the LED array. | 05-29-2014 |
20140139138 | LIGHT EMITTING APPARATUS AND METHOD OF OPERATING THEREOF - A light emitting apparatus disclosed herein comprises a first control apparatus, a first light emitting device, a sense apparatus, a second control apparatus, a power source and a second light emitting device, wherein the second light emitting device is electrically connected to the power source which is not connected to the first light emitting device. The sense apparatus senses both temperature and current of the first light emitting device to generate a second driving signal. The second driving signal is then provided to control the second light emitting device to emit a light for compensating the CCT shift of the light emitted by the first light emitting device. | 05-22-2014 |
20140134783 | TANDEM SOLAR CELL - This application is related to a method of manufacturing a solar cell device comprising providing a substrate comprising Ge or GaAs; forming a first tunnel junction on the substrate, wherein the first tunnel junction comprises a first n-type layer comprising InGaP:Te, and a first alloy layer comprising AlxGa(1-x)As and having a lattice constant; adding a material into the first alloy layer to change the lattice constant; and forming a first p-n junction on the first tunnel junction. | 05-15-2014 |
20140131760 | LIGHT EMITTING DEVICE AND MANUFACTURE METHOD THEREOF - A flip-chip LED including a light emitting structure, a first dielectric layer, a first metal layer, a second metal layer, and a second dielectric layer is provided. The light emitting structure includes a first conductive layer, an active layer, and a second conductive layer. The active layer is disposed on the first conductive layer, and the second conductive layer is disposed on the active layer. The first metal layer is disposed on the light emitting structure and is contact with the first conductive layer, and part of the first metal layer is disposed on the first dielectric layer. The second metal layer is disposed on the light emitting structure and is in contact with the second conductive layer, and part of the second metal layer is disposed on the first dielectric layer. The second dielectric layer is disposed on the first dielectric layer. The first conductive layer includes a rough surface so as to improve a light extraction efficiency. | 05-15-2014 |
20140124819 | LIGHT-EMITTING DEVICE - A light-emitting device comprises a first semiconductor layer; and a transparent conductive oxide layer comprising a diffusion region having a first metal material and a non-diffusion region devoid of the first metal material, wherein the non-diffusion region is closer to the first semiconductor layer than the diffusion region. | 05-08-2014 |
20140124807 | Light Emitting Device - A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer. | 05-08-2014 |
20140124798 | LIGHT-EMITTING ELEMENT AND THE LIGHT-EMITTING ARRAY HAVING THE SAME - A light-emitting element includes: a light-emitting structure; a plurality of first contact portions separately on the light-emitting structure; and a plurality of reflective portions disposed separately among the plurality of first contact portions. | 05-08-2014 |
20140124734 | NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE - A nitride-based semiconductor light-emitting device includes: a light-emitting stack comprising a first semiconductor structure having a first conductivity, a second semiconductor structure having a second conductivity, and an active region interposed the first semiconductor structure and the second semiconductor structure; a semiconductor buffer structure formed under the first semiconductor structure; and an un-doped or unintentionally-doped AlGaN based layer formed between the first semiconductor structure and the semiconductor buffer structure. | 05-08-2014 |
20140117306 | Light Emitting Device - A light-emitting device comprises a first type semiconductor layer, a multi-quantum well structure on the first type semiconductor layer, and a second type semiconductor layer on the multi-quantum well structure, wherein the multi-quantum well structure comprises a first portion near the first type semiconductor layer, a second portion near the second type semiconductor layer, and a strain releasing layer between the first portion and the second portion and comprising a first layer including Indium, a second layer including Aluminum on the first layer, and a third layer including Indium on the second layer, wherein the Indium concentration of the third layer is higher than that of the first layer. | 05-01-2014 |
20140111996 | LAMP APPARATUSES - A lamp apparatus include a lamp body, at least an alternating current light-emitting diode and a plug. The alternating current light-emitting diode is disposed on a lamp body. The plug is electrically connected to the alternating current light-emitting diode. In lamp apparatuses utilizing AC LED, heat generated thereby is almost concentrated on chips. Compared with conventional lamp apparatuses utilizing DC LEDs, heat generated thereby is distributed on chips and outer rectifier. In lamp apparatuses utilizing AC LEDs, heat generated thereby is almost concentrated on chips because AC LEDs operate directly with AC electric power, omitting a rectifier and preventing power loss during operation of power rectification. Therefore, the heat accumulated on the chips of the AC LEDs is enough to be used to evaporate essential oil. In another embodiment, the invention utilizes low-resistance pure water surrounding the AC LED to dissipate its heat. | 04-24-2014 |
20140111104 | LIGHT-EMITTING DEVICE CIRCUIT AND METHOD OF OPERATING THEREOF - The light-emitting device disclosed herein comprises a step down circuit and a current limit device, wherein the step down circuit prevents the current signal provided to the light-emitting device larger than the rating current value of the light-emitting device. Moreover, the current limit device only limits current signal while the power supply surges. The two stages protect circuit turn less power to heat. | 04-24-2014 |
20140110632 | COMPOUND OF PHOSPHOR AND THE MANUFACTURING METHOD THEREOF - Provided is a metal oxonitridosilicate phosphor of a general formula M | 04-24-2014 |
20140103376 | LIGHT-EMITTING DEVICE HAVING A PATTERNED SURFACE - The disclosure provides a light-emitting device. The light-emitting device comprises: a substrate having a first patterned unit; and a light-emitting stack on the substrate and having an active layer with a first surface; wherein the first patterned unit, protruding in a direction from the substrate to the light-emitting stack, has side surfaces abutting with each other and substantially non-parallel to the first surface in cross-sectional view, and has a non-polygon shape in top view. | 04-17-2014 |
20140103290 | LIGHT-EMITTING DEVICE - A light-emitting device comprises a first semiconductor layer; a second semiconductor layer; a light-emitting layer formed between the first semiconductor layer and the second semiconductor layer; a first electron blocking layer formed between the first semiconductor layer and the light-emitting layer; and a second electron blocking layer formed between the second semiconductor layer and the light-emitting layer, wherein the thickness of the second electron blocking layer is not equal to that of the first electron blocking layer, and/or the band gap energy of the second electron blocking layer is not equal to that of the first electron blocking layer. | 04-17-2014 |
20140096901 | LIGHT EMITTING DEVICE AND METHOD OF FORMING THE SAME - A light-emitting device includes a transparent substrate, a transparent adhesive layer on the transparent substrate, a first transparent conductive layer on the transparent adhesive layer, a multi-layer epitaxial structure and a first electrode on the transparent conductive layer, and a second electrode on the multi-layer epitaxial structure. The multi-layer epitaxial structure includes a light-emitting layer. The transparent substrate has a first surface facing the transparent adhesive layer and a second surface opposite to the first surface, wherein the area of the second surface is larger than that of the light-emitting layer, and the area ratio thereof is not less than 1.6. | 04-10-2014 |
20140093991 | METHOD FOR MANUFACTURING HIGH EFFICIENCY LIGHT-EMITTING DIODES - A method of manufacturing a light-emitting device comprising the steps of cutting a substrate by a laser beam to form a cavity in the substrate and generate a by-product directly on the substrate by the cutting, and removing the by-product by a chemical solution containing an acid under a predetermined cleaning temperature. | 04-03-2014 |
20140084327 | LIGHT-EMITTING DEVICE - A light-emitting device comprises: a substrate having a first side and a second side opposite to the first side; a light-emitting stack disposed on the first side and emitting a light having a main wavelength of λ nm; wherein the substrate comprises a first surface on the first side, the first surface comprising a first pattern arranged with a first period, the first pattern comprising a second pattern arranged with a second period; and the first period is greater than 6λ, and the second period is smaller than λ nm. | 03-27-2014 |
20140084324 | LIGHT-EMITTING DEVICES - A light-emitting device of an embodiment of the present application comprises a semiconductor layer sequence provided with a first main side, a second main side, and an active layer; a beveled trench formed in the semiconductor layer sequence, having a top end close to the second main side, a bottom end, and an inner sidewall connecting the top end and the bottom end. In the embodiment, the inner sidewall is an inclined surface. The light-emitting device further comprises a dielectric layer disposed on the inner sidewall of the beveled trench and the second main side; a first metal layer formed on the dielectric layer; a carrier substrate; and a first connection layer connecting the carrier substrate and the semiconductor layer sequence. | 03-27-2014 |
20140084238 | NANO-PATTERNED SUBSTRATE AND EPITAXIAL STRUCTURE CROSS-REFERENCE TO RELATED APPLICATION - A nano-patterned substrate includes a substrate and a plurality of nano-structures. The substrate has an upper surface and each of the plurality of nano-structures comprises a semiconductor buffer region and a buffer region formed on the upper surface of the substrate, wherein one of the pluralities of nano-structures has a ratio of height to diameter greater than 1, and an arc-shaped top surface. | 03-27-2014 |
20140084188 | APPARATUS FOR MEASURING THE OPTOELECTRONIC CHARACTERISTICS OF LIGHT-EMITTING DIODE - An apparatus for measuring the optoelectronic characteristics of a light-emitting diode includes: a container including a light input port and a light output port; a measurement module connected to the light output port of the container; a sample holder under the container for holding a light-emitting diode under test, wherein a surface of the measurement module reflects more than 50% of the luminous flux generated by the light-emitting diode under test; and a light gathering unit between the container and the sample holder, wherein an interior wall of the light gathering unit reflects more than 50% of the luminous flux generated by the light-emitting diode under test. | 03-27-2014 |
20140078131 | ALTERNATING CURRENT LIGHT EMITTING DEVICE - An alternating current (AC) light emitting device includes an AC light emitting diode (LED) module and a waveform modulation unit. The AC LED module includes at least two sets of micro-diodes. The waveform modulation unit coupled between the AC LED module and an AC voltage source modulates a waveform of the AC voltage source. | 03-20-2014 |
20140077238 | LIGHT-EMITTING DEVICE AND THE MANUFACTURING METHOD THEREOF - A light-emitting device includes: a carrier; a light-emitting structure formed on the carrier, wherein the light-emitting structure has a first surface facing the carrier, a second surface opposite to the first surface, and an active layer between the first surface and the second surface; a plurality of first trenches extended from the first surface and passing through the active layer so a plurality of light-emitting units is defined; and a plurality of second trenches extended from the second surface and passing through the active layer of each of the plurality of light-emitting units. | 03-20-2014 |
20140061708 | LIGHT-EMITTING DEVICE - A light-emitting device includes a first electrode; a light-emitting stacked layer on the first electrode; a first contact layer on the light-emitting stacked layer, wherein the first contact layer includes a first contact link and a plurality of first contact lines connected to the first contact link; a first conductive post in the light-emitting stacked layer and electrically connecting the first electrode and the first contact layer; and a passivation layer between the first conductive post and the light-emitting stacked layer. | 03-06-2014 |
20140055980 | Light-Emitting Device - An embodiment of the present invention discloses a light-emitting device including a first light source, a second light source, and an optical element. The first light source is configured to emit a first light at a first low temperature and a first high temperature, and has a first hot/cold factor. The second light source is configured to emit a second light at the first low temperature and the first high temperature, and has a second hot/cold factor. The optical element is configured to generate a third light by the excitation of the first light, and reach a second high temperature higher than the first high temperature under the irradiation of the first light. | 02-27-2014 |
20140054631 | LED ARRAY - An LED array having N light-emitting diode units (N≧3) comprises a permanent substrate, a bonding layer on the permanent substrate, a second conductive layer on the bonding layer, a second isolation layer on the second conductive layer, a crossover metal layer on the second isolation layer, a first isolation layer on the crossover metal layer, a conductive connecting layer on the first isolation layer, an epitaxial structure on the conductive connecting layer, and a first electrode layer on the epitaxial structure. The light-emitting diode units are electrically connected with each other by the crossover metal layer. | 02-27-2014 |
20140048836 | LIGHTING EMITTING DEVICE WITH ALIGNED-BONDING AND THE MANUFACTURING METHOD THEREOF - A light-emitting device comprises a semiconductor light-emitting stacked layer having a first connecting surface, wherein the semiconductor light-emitting stacked layer comprises a first alignment pattern on the first connecting surface, and a substrate under the semiconductor light-emitting stacked layer, wherein the substrate has a second connecting surface being operable for connecting with the first connecting surface, wherein the substrate comprises a second alignment pattern on the second connecting surface, and the second alignment pattern is corresponding to the first alignment pattern. | 02-20-2014 |
20140048833 | LIGHT-EMITTING DEVICE WITH NARROW DOMINANT WAVELENGTH DISTRIBUTION AND METHOD OF MAKING THE SAME - This application discloses a light-emitting device with narrow dominant wavelength distribution and a method of making the same. The light-emitting device with narrow dominant wavelength distribution at least includes a substrate, a plurality of light-emitting stacked layers on the substrate, and a plurality of wavelength transforming layers on the light-emitting stacked layers, wherein the light-emitting stacked layer emits a first light with a first dominant wavelength variation; the wavelength transforming layer absorbs the first light and converts the first light into the second light with a second dominant wavelength variation; and the first dominant wavelength variation is larger than the second dominant wavelength variation. | 02-20-2014 |
20140048830 | LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - A method of fabricating a light-emitting device comprising steps of: providing a substrate, an active layer, and a first semiconductor layer between the substrate and the active layer; removing part of the active layer; and forming a rough structure in the first semiconductor layer while keeping the active layer attached to the substrate. | 02-20-2014 |
20140048825 | LIGHT-EMITTING DEVICE - This disclosure discloses a light-emitting display module display. The light-emitting display module comprises: a board; and a plurality of light-emitting diode modules arranged in an array configuration on the board; wherein one of the light-emitting diode modules comprises a plurality of encapsulated light-emitting units spaced apart from each other; and one of the encapsulated light-emitting units comprises a plurality of optoelectronic units, a first supporting, and a fence; and wherein the plurality of optoelectronic units are covered by the first supporting structure, and the fence surrounds the first supporting structure and the plurality of optoelectronic units. | 02-20-2014 |
20140048824 | LIGHT-EMITTING DEVICE - A light-emitting device of an embodiment of the present application comprises optoelectronic units; a transparent structure having cavities configured to accommodate at least one of the optoelectronic units; and a conductive element connecting at least two of the optoelectronic units. | 02-20-2014 |
20140042470 | METHOD OF MAKING LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE MADE THEREOF - This disclosure discloses a method of making a light-emitting device. The method comprises forming a plurality of light-emitting chips, each of the light-emitting chips comprising an epitaxial structure and an electrode formed on the epitaxial structure; forming a protection layer on the electrode in each of the light-emitting chips; forming a plurality of light-emitting groups by collecting the light-emitting chips, wherein each of the light-emitting groups having substantially the same opto-electrical characteristics; forming a wavelength converted layer in each of the light-emitting groups to cover the epitaxial structure and the protection layer; and removing the wavelength converted layer on the protection layer to expose the protection layer. | 02-13-2014 |
20140034988 | MANUFACTURING METHOD OF LIGHT-EMITTING DEVICE AND LIGHT MIXING DEVICE - Disclosed is a light-emitting device comprising: a carrier; a light-emitting element disposed on the carrier; a first light guide layer covering the light-emitting element; a second light guide layer covering the first light guide layer; a low refractive index layer between the first light guide layer and the second light guide layer to reflect the light from the second light guide layer; and a wavelength conversion layer covering the second light guide layer; wherein the low refractive index layer has a refractive index smaller than one of the refractive indices of first light guide layer and the second light guide layer. | 02-06-2014 |
20140034981 | LIGHT EMITTING DIODE STRUCTURE - A light-emitting diode structure has: a substrate; a light-emitting semiconductor stack on the substrate, wherein the light-emitting semiconductor stack comprises a first semiconductor layer, a second semiconductor layer with electrical polarity different from that of the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrode electrically connected to the first semiconductor layer; and a second electrode electrically connected to the second semiconductor layer, wherein the first electrode comprises a contact area and an extension area, and the contact area has a first surface corresponding to the first semiconductor layer and the extension area has a second surface corresponding to the first semiconductor layer, wherein a roughness of the first surface is different from that of the second surface, and the reflectivity of the first surface is smaller than that of the second surface. | 02-06-2014 |
20140034977 | LIGHT-EMITTING DIODE ARRAY - The application provides a light-emitting diode array, including: a first light-emitting diode including a first area; a second area; a first isolation path between the first area and the second area, and the first isolation path including an electrode isolation layer; and an electrode contact layer covering the first area; a second light-emitting diode including a semiconductor stack layer; and a second electrical bonding pad on the semiconductor stack layer; and a second isolation path between the first light-emitting diode and the second light-emitting diode, wherein the second isolation path includes an electrical connecting structure electrically connected to the first light-emitting diode and the second light-emitting diode. | 02-06-2014 |
20140034974 | LIGHT-EMITTING DEVICE - A light-emitting diode device is disclosed, which includes a substrate; a plurality of light-emitting diode units, each of the light-emitting diode units being an equilateral polygon with more than four sides, are disposed on the substrate; wherein each of the light-emitting diode units includes a first electrical connecting area disposed along a first side of the light-emitting diode unit, a second electrical connecting area disposed along a second side of the light-emitting diode unit, and a conductive connecting structure disposed on each of the electrical connecting areas; wherein each of the electrical connecting area electrically connects to one another light-emitting diode unit through the conductive connecting structure. | 02-06-2014 |
20140034900 | WAVELENGTH CONVERTING MATERIAL - A wavelength converting material comprising a phosphate compound have a chemical formula of AB | 02-06-2014 |
20140027786 | HIGH EFFICIENCY LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME - A high efficiency light-emitting diode and a method for manufacturing the same are described. The high efficiency light-emitting diode comprises: a permanent substrate; a first contact metal layer and a second contact metal layer respectively deposed on two opposite surfaces of the permanent substrate; a bonding layer deposed on the second contact metal layer; a diffusion barrier layer deposed on the bonding layer, wherein the permanent substrate, the bonding layer and the diffusion barrier layer are electrically conductive; a reflective metal layer deposed on the diffusion barrier layer; a transparent conductive oxide layer deposed on the reflective metal layer; an illuminant epitaxial structure deposed on the transparent conductive oxide layer, wherein the illuminant epitaxial structure includes a first surface and a second surface opposite to the first surface; and a second conductivity type compound electrode pad deposed on the second surface of the illuminant epitaxial structure. | 01-30-2014 |
20140021505 | LIGHT-EMITTING DEVICE - This disclosure discloses a light-emitting device. The light-emitting device comprises: a substrate; an intermediate layer formed on the substrate; a transparent bonding layer; a first semiconductor window layer bonded to the semiconductor layer through the transparent bonding layer; and a light-emitting stack formed on the first semiconductor window layer. The intermediate layer has a refractive index between the refractive index of the substrate and the refractive index of the first semiconductor window layer. | 01-23-2014 |
20140017840 | NITRIDE-BASED LIGHT-EMITTING DEVICE - A nitride-based light-emitting device includes a substrate and a plurality of layers formed over the substrate in the following sequence: a nitride-based buffer layer formed by nitrogen, a first group III element, and optionally, a second group III element, a first nitride-based semiconductor layer, a light-emitting layer, and a second nitride-based semiconductor layer. | 01-16-2014 |
20140014974 | LIGHT-EMITTING DEVICE HAVING PATTERNED SUBSTRATE AND METHOD OF MANUFACTURING THEREOF - A light-emitting device disclosed herein comprises a patterned substrate having a plurality of cones, wherein a space is between two adjacent cones. A light-emitting stack formed on the cones. Furthermore, the cones comprise an area ratio of a top area of the cone and a bottom area of the cone which is less than 0.0064. | 01-16-2014 |
20140001509 | OPTOELECTRONIC SEMICONDUCTOR DEVICE AND THE MANUFACTURING METHOD THEREOF | 01-02-2014 |
20130341667 | LIGHT-EMITTING DEVICE - A light-emitting device includes a semiconductor light-emitting stack; a current injected portion formed on the semiconductor light-emitting stack; an extension portion having a first branch radiating from the current injected portion and a second branch extending from the first branch; an electrical contact structure between the second branch and the semiconductor light-emitting stack and having a first width; and a current blocking structure located right beneath the electrical contact structure and having a second width larger than the first width. | 12-26-2013 |
20130337591 | LIGHT-EMITTING DEVICE - A method of manufacturing a light-emitting device includes forming a first optical element on a first carrier, wherein the first optical element comprises an opening; forming a light-emitting element in the opening; forming a second carrier on the first optical element; removing the first carrier after forming the second carrier on the first optical element; and forming a conductive structure under the first optical element. | 12-19-2013 |
20130334551 | LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A light-emitting device comprising: a substrate having a first surface and a second surface, wherein the second surface is opposite to the first surface; a semiconductor structure formed on the first surface of the substrate, comprising a first type semiconductor layer, an active layer and a second type semiconductor layer; and an isolation region separating at least the active layer into a first part and a second part, wherein the first part is capable of generating the electromagnetic radiation, and the second part comprises a breakdown diode. | 12-19-2013 |
20130328102 | OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME - An optoelectronic device comprising: a substrate; and an epitaxial stack including a first semiconductor layer having a first conductivity-type impurity, an active layer, and a second semiconductor layer having a second conductivity-type impurity formed in sequence on the substrate; a hollow component formed inside the active layer or the second semiconductor layer, wherein the layer with the hollow component is doped with an additional impurity. | 12-12-2013 |
20130328077 | LIGHT-EMITTING ELEMENT - A light-emitting element includes: a light-emitting stack including an uneven upper surface; a transparent conductive layer formed on the uneven upper surface; an insulating layer formed on the transparent conductive layer, and partial regions of the transparent conductive layer are exposed; a reflective layer formed on the transparent conductive layer and the insulating layer; and a contact interface including a current blocking area formed between the insulating layer and the reflective layer; and a plurality of first contact regions formed between the transparent conductive layer and the reflective layer. | 12-12-2013 |
20130320296 | LIGHT EMITTING DEVICE WITH QCSE-REVERSED AND QCSE-FREE MULTI QUANTUM WELL STRUCTURE - A light-emitting device comprises a semiconductor stacked structure, the semiconductor stacked structure comprising a p-type semiconductor layer, a n-type semiconductor layer and an multiple quantum well structure between the p-type semiconductor layer and the n-type semiconductor layer, wherein the multiple quantum well structure comprises a first multiple quantum well structure near the n-type semiconductor layer and a second multiple quantum well structure near the p-type semiconductor layer, wherein the first multiple quantum well structure has positive interface bound charge and the second multiple quantum well structure has zero interface bound charge. | 12-05-2013 |
20130319519 | CONCENTRATED PHOTOVOLTAIC CELL - A concentrated photovoltaic cell comprises a semiconductor stack comprising an upper surface and a lower surface opposite to the upper surface, wherein the upper surface is operable to absorb a light which comprises a light intensity distribution on the upper surface; and an upper electrode formed on the upper surface of the semiconductor stack and comprising an electrode pattern approximately corresponding to the light intensity distribution, wherein the light intensity distribution comprises a high light-concentrated area having a first light intensity and a low light-concentrated area having a second light intensity, wherein the second light intensity is lower than the first light intensity. | 12-05-2013 |
20130314001 | Light-Emitting Device with Temperature Compensation - The present application provides a light-emitting device comprising a first light-emitting diode group; a second light-emitting diode group electrically connected to the first light-emitting diode group in parallel; and a temperature compensation. element electrically connected to the second light-emitting diode group in series; and a first switch device connected between the second light-emitting diode group and the temperature compensation element. | 11-28-2013 |
20130313594 | OPTOELECTRONIC ELEMENT AND MANUFACTURING METHOD THEREOF - An optoelectronic element includes an optoelectronic unit having a first top surface; a first metal layer on the first top surface; a first transparent structure surrounding the optoelectronic unit and exposing the first top surface; and a first contact layer on the first transparent structure, including a connective part electrically connected with the first metal layer. | 11-28-2013 |
20130298972 | OPTOELECTRONIC DEVICE AND THE MANUFACTURING METHOD THEREOF - A method for manufacturing an optoelectronic device includes steps of: providing an optoelectronic structure; forming a first contact layer having a pattern on the upper surface of the optoelectronic structure; forming a dielectric layer on the first contact layer and the optoelectronic structure; removing the dielectric layer on the first contact layer; and forming an electrode structure on the first contact layer. | 11-14-2013 |
20130286664 | LED LIGHT BULB - LED light bulbs capable of providing even luminous intensity distribution are disclosed. An illustrative LED light bulb includes a base, a light transmissive cover and upstanding light bars. The base is capable of being in electrical communication with a power source and has a screw axis and a periphery. The light transmissive cover is substantially mounted on the periphery. The upstanding light bars are mounted radically around the screw axis and located between the screw axis and the periphery. The upstanding light bars are arranged to substantially shine inward to the screw axis. | 10-31-2013 |
20130286634 | METHOD FOR MANUFACTURING OPTOELECTRONIC DEVICES - A method for manufacturing optoelectronic devices comprising the steps of: providing a common growth substrate; forming a light-emitting epitaxy structure on the common growth substrate; forming a stripping layer on the light-emitting epitaxy structure; forming a solar cell epitaxy structure on the stripping layer; forming an adhesive layer on the solar cell epitaxy structure; proving a solar cell permanent substrate on the adhesive layer; and removing the stripping layer to form a light-emitting device and a solar cell device separately. | 10-31-2013 |
20130285075 | LIGHT-EMITTING DEVICE - A light-emitting device includes a support substrate; a light-emitting stacked layer; transparent-conductive bonding layer; and a semiconductor contact layer. The light-emitting stacked layer includes a first semiconductor layer; an active layer; and a second semiconductor layer, wherein a polarity of the first semiconductor layer is different from that of the semiconductor layer. A first pad is formed on an exposed portion of the first semiconductor layer and a second pad is formed on the semiconductor contact layer. A polarity of the semiconductor contact layer is different from that of the second semiconductor layer. | 10-31-2013 |
20130280832 | FABRCATION METHOD OF LIGHT-EMITTING DEVICE - A fabrication method of a light-emitting device comprises providing a growth substrate; forming a protective layer on a first surface of the growth substrate; and forming a first semiconductor layer on a second surface of the growth substrate opposite to the first surface, wherein the coefficient of thermal expansion of the growth substrate is smaller than that of the protective layer and the first semiconductor layer. | 10-24-2013 |
20130279164 | LED LIGHTING FIXTURES - LED lighting fixtures capable of providing even luminous intensity distribution are disclosed. An illustrative lighting fixture includes a base, a pedestal, a substrate, first and second LEDs, and light transmissive cover. The base is in electrical communication with a power source. The pedestal is on the base. Mounted on the pedestal is the backside of the substrate. The first and second LEDs are mounted on the front and back sides of the substrate, respectively. The light transmissive cover substantially encapsulates the substrate and the first and second LEDs. | 10-24-2013 |
20130273673 | METHOD FOR FORMING LIGHT-EMITTING DEVICE - A method for forming a light-emitting device of the present application comprises providing a wafer; forming a first plurality of light-emitting elements on the wafer; providing a first connection structure to connect each of the first plurality of light-emitting elements; and applying a current flow to one of the first plurality of light-emitting elements for testing at least one electrical property of the light-emitting element while no current flow is applied to the remaining of the first plurality of light-emitting elements. | 10-17-2013 |
20130256731 | LIGHT-EMITTING DEVICE - This disclosure discloses a light-emitting device. The light-emitting device comprises: a substrate; and a first light-emitting unit comprising a plurality of light-emitting diodes electrically connected to each other on the substrate. A first light-emitting diode in the first light-emitting unit comprises a first semiconductor layer with a first conductivity-type, a second semiconductor layer with a second conductivity-type, and a light-emitting stack formed between the first and second semiconductor layers. The first light-emitting diode in the first light-emitting unit further comprises a first connecting layer on the first semiconductor layer for electrically connecting to a second light-emitting diode in the first light-emitting unit; a second connecting layer, separated from the first connecting layer, formed on the first semiconductor layer; and a third connecting layer on the second semiconductor layer for electrically connecting to a third light-emitting diode in the first light-emitting unit. | 10-03-2013 |
20130256729 | LIGHT-EMITTING DEVICE - Disclosed is a light-emitting device comprising: a light-emitting stack with a length and a width comprising: a first conductivity type semiconductor layer; an active layer on the first conductivity type semiconductor layer; and a second conductivity type semiconductor layer on the active layer; a conductive layer with a width greater than the width of the first conductivity type semiconductor layer and under the first conductivity type semiconductor layer, the conductive layer comprising a first overlapping portion which overlaps the first conductivity type semiconductor layer and a first extending portion which does not overlap the first conductivity type semiconductor layer; a transparent conductive layer with a width greater than the width of the second conductivity type semiconductor layer over the second conductivity type semiconductor layer, the transparent conductive layer comprising a second overlapping portion which overlaps the second conductivity type semiconductor layer and a second extending portion which does not overlap the second conductivity type semiconductor layer; a first electrode substantially joined with only the first extending portion or a part of the first extending part; and a second electrode substantially joined with only the second extending portion or a part of the second extending portion. | 10-03-2013 |
20130241398 | Wavelength Conversion Structure, Manufacturing Methods Thereof, and Lighting Emitting Device including the Wavelength Conversion Structure - A wavelength conversion structure comprises a phosphor layer comprising a first part and a second part formed on the first part, wherein the first part and the second part have a plurality of pores, a first material layer formed in the plurality of pores of the first part, a second material layer formed in the plurality of pores of the second part and a plurality of phosphor particles, wherein the plurality of phosphor particles is distributed in the first material layer and the second material layer. | 09-19-2013 |
20130240924 | LIGHT-EMITTING DEVICE - A light-emitting device comprises a substrate; a semiconductor stack comprising a first type semiconductor layer, a second type semiconductor layer and an active layer formed between the first type semiconductor layer and the second type semiconductor layer; a bonding layer formed between the substrate and the semiconductor stack; and a plurality of buried electrodes physically buried in the first type semiconductor layer. | 09-19-2013 |
20130240923 | HIGH BRIGHTNESS LIGHT EMITTING DIODE STRUCTURE AND THE MANUFACTURING METHOD THEREOF - A light-emitting diode structure comprising: a substrate; a light-emitting semiconductor stack on the substrate, wherein the light-emitting semiconductor stack comprises a first semiconductor layer, a second semiconductor layer with different polarity from the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrical pad on the substrate, wherein the first electrical pad is apart from the light-emitting semiconductor stack and electrically connects to the first semiconductor layer; and a second electrical pad on the substrate, wherein the second electrical pad is apart from the light-emitting semiconductor stack and electrically connects to the second semiconductor layer, wherein the first electrical pad and the second electrical pad are not higher than the light-emitting semiconductor stack. | 09-19-2013 |
20130234172 | LIGHT-EMITTING DIODE DEVICE - A light-emitting diode device is disclosed, which comprises a substrate including a first surface; a plurality of light-emitting diode units formed on the first surface, each of the light-emitting diode units including a first semiconductor layer, a second semiconductor layer formed on the first semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; and a plurality of conductive connecting structures, spatially separated from each other, wherein one end of one of the plurality of conductive connecting structure is arranged on the second semiconductor layer, directly contacted with the second semiconductor layer, and electrically connected with each other through the second semiconductor layer; wherein another end of the one of the conductive connecting structures is arranged on another light-emitting diode unit, and directly contacted with one of the semiconductor layers of the another light-emitting diode unit. | 09-12-2013 |
20130228802 | LIGHT-EMITTING DIODE DEVICE - A two dimensional array light-emitting diode device is disclosed, which includes a transparent substrate including a first surface; a plurality of adjacent light-emitting diode units arranged on the first surface, wherein each of the light-emitting diode units including a plurality of sides and a circumference; and a plurality of conductive connecting structures arranged on the first surface, electrically connecting the plurality of light-emitting diode units mentioned above; wherein the sides of each of the light-emitting diode units have a plurality of vertical distances between the closest light-emitting diode units, and when the plurality of vertical distances larger than 50 μm, the sides are not near the closest light-emitting diode units; wherein the ratio of the total length of the sides not near the light-emitting diode units of each light-emitting diode unit and the circumference of the light-emitting diode unit is larger than 50%. | 09-05-2013 |
20130222731 | ARRAY-TYPE LIGHT-EMITTING DEVICE AND APPARATUS THEREOF - The application discloses an array-type light-emitting device comprising a substrate, a semiconductor light-emitting array formed on the substrate and emitting a first light with a first spectrum, wherein the semiconductor light-emitting array comprises a first light-emitting unit and a second light-emitting units, a first wavelength conversion layer formed on the first light-emitting unit for converting the first light into a third light with a third spectrum, and a circuit layer connecting the first light-emitting unit and the second light-emitting unit in a connection form to make the first light-emitting and the second light-emitting unit light alternately in accordance with a predetermined clock when driving by a power supply. | 08-29-2013 |
20130221395 | OPTOELECTRONIC DEVICE - A optoelectronic device comprises a semiconductor stack layer; a first transparent conductive oxide (abbreviate as “TCO” hereinafter) layer located on the semiconductor stack layer, wherein the first TCO layer has at least one opening; and a second TCO layer covering the first TCO layer, wherein the second TCO layer is filled into the opening of the first TCO layer and contacted with the semiconductor stack layer, and one of the first TCO layer and the second TCO layer forms an ohmic contact with the semiconductor stack layer. | 08-29-2013 |
20130221391 | LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - A light emitting device comprising: a substrate, wherein the substrate comprising a first major surface, a second major surface opposite to the first major surface, and a sidewall wherein at least partial of the sidewall is a substantially textured surface with a depth of 10˜150 μm; and a light emitting stack layer formed on the substrate. | 08-29-2013 |
20130214294 | LIGHT EMITTING DEVICE WITH PLANAR CURRENT BLOCK STRUCTURE - A light-emitting device comprises a support base having a planar surface, a semiconductor stacked structure disposed on the planar surface, the semiconductor stacked structure comprising a first semiconductor layer, an active layer, a second semiconductor layer, a current block region formed in one of the first semiconductor layer and the second semiconductor layer and physically contacts the planar surface and an electrode disposed on the semiconductor stacked structure. | 08-22-2013 |
20130210178 | LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A light-emitting device and method for manufacturing the same are described. A method for manufacturing a light-emitting device comprising the steps of: providing a substrate; forming a light-emitting structure on the substrate, wherein the light-emitting structure comprising a plurality of chip areas and a plurality of street areas; forming a conductive structure between the substrate and the light-emitting structure; removing a part of the light-emitting structure in the street areas to expose a sidewall in the chip areas; forming a first passivation layer on the light-emitting structure in the chip areas; and forming a second passivation layer in the street areas, the sidewalls of the light-emitting structure, and the sidewalls of the first passivation layer. | 08-15-2013 |
20130207135 | LIGHT EMITTING ELEMENT - A light emitting element is provided in this application, including a carrier; a conductive connecting structure disposed on the carrier and including a transparent conductive connecting layer; and an epitaxial stack structure disposed on the conductive connecting structure and including a plurality of electrically connected epitaxial light-emitting stacks, which substantially have the same width. | 08-15-2013 |
20130201321 | METHOD AND APPARATUS FOR TESTING LIGHT-EMITTING DEVICE - Disclosed is a method for testing a light-emitting device comprising the steps of: providing an integrating sphere comprising an inlet port and a first exit port; disposing the light-emitting device close to the inlet port of the integrating sphere; providing a current source to drive the light-emitting device to form an image of the light-emitting device in driven state; providing an image receiving device and to receive the image of the light-emitting device, wherein the image receiving device is connected to the first exit port of the integrating sphere; and determining a luminous intensity of the light-emitting device according to the image. An apparatus for testing a light-emitting device is also disclosed. The apparatus for testing a light-emitting device comprises: an integrating sphere comprising an inlet port and a first exit port, wherein the light-emitting device is disposed close to the inlet port of the integrating sphere; an image receiving device connected to the first exit port of the integrating sphere for receiving an image of the light-emitting device; and a processing unit coupled to image receiving device for determining a luminous intensity of the light-emitting device. | 08-08-2013 |
20130200423 | OPTOELECTRONIC SEMICONDUCTOR DEVICE AND THE MANUFACTURING METHOD THEREOF - The present application provides an optoelectronic semiconductor device, comprising: a substrate; an optoelectronic system on the substrate; a barrier layer on the optoelectronic system, wherein the barrier layer thickness is not smaller than 10 angstroms; and an electrode on the barrier layer. | 08-08-2013 |
20130200414 | LIGHT-EMITTING DIODE DEVICE - An encapsulated light-emitting diode device is disclosed. The encapsulated light-emitting diode device includes a circuit carrier including a surface; a light-emitting device including a transparent substrate, the transparent substrate including a first surface and a second surface; a light-emitting diode chip located on the first surface of the transparent substrate; and a first transparent glue covering the light-emitting diode chip and formed on the first surface; wherein the first surface and the surface comprise an included angle larger than zero; wherein the first transparent glue has a circular projection on the first surface and the light-emitting diode chip is substantially located at the center of the circular projection. | 08-08-2013 |
20130181245 | LIGHT-EMITTING DEVICE - A light-emitting device including: a light-emitting stacked layer having first conductivity type semiconductor layer, a light-emitting layer formed on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer formed on the light-emitting layer, wherein the upper surface of the second conductivity type semiconductor layer is a textured surface; a first planarization layer formed on a first part of the upper surface of the second conductivity type semiconductor layer; a first transparent conductive oxide layer formed on the first planarization layer and a second part of the second conductivity type semiconductor layer, including a first portion in contact with the first planarization layer and a second portion having a first plurality of cavities in contact with the second conductivity type semiconductor layer;; and a first electrode formed on the first portion of the first transparent conductive oxide layer. | 07-18-2013 |
20130164873 | Nitride-Based Light-Emitting Device - A nitride-based light-emitting device includes a substrate and a plurality of layers formed over the substrate in the following sequence: a nitride-based buffer layer formed by nitrogen, a first group III element, and optionally, a second group III element, a first nitride-based semiconductor layer, a light-emitting layer, and a second nitride-based semiconductor layer. | 06-27-2013 |
20130140590 | LIGHT-EMITTING DEVICE WITH TEMPERATURE COMPENSATION - The present application provides a light-emitting device comprising a first light-emitting diode group with a first hot/cold factor comprising a plurality of first light-emitting diode units electrically connected to one another; and a temperature compensation element electrically connected to the first light-emitting diode group, and comprising a first resistor and a second resistor; wherein the first resistor has a first temperature coefficient of resistance and the second resistor has a second temperature coefficient of resistance; and the absolute value of the first temperature coefficient of resistance is ten times greater than that of the second temperature coefficient of resistance. | 06-06-2013 |
20130140581 | OPTICAL DEVICE - An optical device is provided. Multi-layer structures are disposed on a substrate, wherein each of the multi-layer structures is consisting of at least two insulated layers with different refractive indexes formed alternately. A buffer layer covers the multi-layer structures, so that said multi-layer structures are disposed between the buffer layer and the substrate, wherein said buffer layer is an un-doped GaN based semiconductor layer. A first conductive semiconductor layer is disposed on the buffer layer. An active layer is disposed on said first conductive semiconductor layer. A second conductive semiconductor layer is disposed on said active layer and a transparent conductive layer is disposed on said second conductive semiconductor layer. | 06-06-2013 |
20130134457 | OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME - An optoelectronic device comprising, a substrate and a first transition stack formed on the substrate comprising a first transition layer formed on the substrate having a hollow component formed inside the first transition layer, a second transition layer formed on the first transition layer, and a reflector rod formed inside the second transition layer. | 05-30-2013 |
20130121002 | ILLUMINATION APPARATUS - This disclosure discloses an illumination apparatus. The illumination apparatus comprises a cover comprising a second portion and a first portion, and a light source disposed within the cover. An average thickness of the first portion is greater than that of the second portion. | 05-16-2013 |
20130120999 | ILLUMINATION APPARATUS - This disclosure discloses an illumination apparatus. The illumination apparatus comprises an inner cover comprising a top surface having a first length; a pedestal on which the inner cover is disposed comprising a top surface having a second length; and a holder supporting the pedestal; wherein the first length is greater than the second length. | 05-16-2013 |
20130119429 | LIGHT-EMITTING ELEMENT AND THE MANUFACTURING METHOD THEREOF - A light-emitting element includes a light-emitting stack includes: a first semiconductor layer; an active layer formed on the first semiconductor layer; and a second semiconductor layer formed on the active layer; a recess structure formed through the second semiconductor layer, the active layer, and extended in the first semiconductor layer, wherein the first semiconductor layer includes a contact region defined by the recess structure; a first electrode structure including a first contact portion on the contact region of the first semiconductor layer, and a second contact portion laterally extended from the first contact portion into the first semiconductor layer; and a dielectric layer formed on side surfaces of the second semiconductor layer and the active layer to insulate the second semiconductor layer and the active layer from the first contact portion. | 05-16-2013 |
20130115725 | LIGHT EMITTING DIODE HAVING A TRANSPARENT SUBSTRATE - A light emitting diode having a transparent substrate and a method for manufacturing the same. The light emitting diode is formed by creating two semiconductor multilayers and bonding them. The first semiconductor multilayer is formed on a non-transparent substrate. The second semiconductor multilayer is created by forming an amorphous interface layer on a transparent substrate. The two semiconductor multilayers are bonded and the non-transparent substrate is removed, leaving a semiconductor multilayer with a transparent substrate. | 05-09-2013 |
20130113014 | OPTOELECTRONIC DEVICE - The application provides an optoelectronic device structure, comprising a semiconductor stack, comprising a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; a first electrode electrically connecting with the first conductivity type semiconductor layer, and further comprising a first extension electrode; a second electrode electrically connecting with the second conductivity type semiconductor layer; and a plurality of electrical restraint contact areas between the semiconductor stack and the first extension electrode, wherein the plurality of electrical restraint contact areas is distributed in a variable interval. | 05-09-2013 |
20130099268 | WAFER-SCALED LIGHT-EMITTING STRUCTURE - This invention discloses a wafer-scaled light-emitting structure comprising a supportive substrate; an anti-deforming layer; a bonding layer; and a light-emitting stacked layer, wherein the anti-deforming layer reduces or removes the deformation like warp caused by thinning of the substrate. | 04-25-2013 |
20130092595 | WAFER CARRIER - A wafer carrier comprises a supporting body having a height and comprising an opening, wherein a bottom surface of the opening is a curved surface; and a plurality of supporting rods formed around a periphery of the supporting body. Another aspect of the present application provides a manufacturing method of the wafer carrier. The method comprises forming an epitaxial layer on a growth substrate to form a wafer structure; measuring a curvature radius of the wafer structure; and providing the wafer carrier described above in accordance with the curvature radius of the wafer structure. | 04-18-2013 |
20130082238 | LIGHT-EMITTING DEVICE - Disclosed is a light-emitting device, comprising: a first multi-quantum well structure comprising a plurality of first well layers and a first barrier layer stacked alternately, wherein the energy gap of the first barrier layer is larger than that of any one of the first well layers; a second multi-quantum well structure comprising a plurality of second well layers and a second barrier layer stacked alternately, wherein the energy gap of the second barrier layer is larger than that of any one of the second well layers; and a third barrier layer disposed between the first multi-quantum well structure and the second multi-quantum well structure, and the third barrier layer connected with the first well layer and the second well layer, wherein the energy gap of the third barrier layer is larger than that of any one of the first well layers and the second well layers, and the thickness of the third barrier layer is larger than that of any one of the first barrier layer and the second barrier layer. | 04-04-2013 |
20130081681 | PHOTOVOLTAIC DEVICE - This disclosure discloses a light-emitting device. The light-emitting device comprises a substrate; a first photovoltaic cell disposed over the substrate comprising a base layer having a first conductivity type; an emitter layer having a second conductivity type; a window layer having the second conductivity type; an intermediate structure between the emitter layer and the window layer having the second conductivity type, and comprising a first portion adjacent to the emitter layer and a second portion on the first portion. The first portion comprises a bandgap energy higher than that of the emitter layer and the intermediate structure is substantially lattice matched with the emitter layer. | 04-04-2013 |
20130075696 | LIGHT-EMITTING ELEMENT WITH MULTIPLE LIGHT-EMTTING STACKED LAYERS - A light-emitting device includes a first light-emitting element emitting a first light with a first dominant wavelength including a first MQW structure including a first number of MQW pairs; a second MQW structure on the first MQW structure, including a second number of MQW pairs; and a tunneling layer between the first MQW structure and the second MQW structure; and a second light-emitting element emitting a third light with a third dominant wavelength, wherein the first number is different from the second number. | 03-28-2013 |
20130075660 | PHOSPHOR AND METHOD FOR PREPARING THE SAME - Disclosed is a phosphor and a method for preparing the same. The phosphor comprises a material having a general composition formula expressed by M | 03-28-2013 |
20130062561 | PHOSPHOR AND METHOD OF PREPARING THE SAME - A phosphor is represented by below formula: | 03-14-2013 |
20130045551 | LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A light-emitting device and method for manufacturing the same are described. A method for manufacturing a light-emitting device comprising steps of: providing a growth substrate, wherein the growth substrate has a first surface and a second surface; forming a light-absorbable layer on the first surface of the growth substrate; forming an illuminant epitaxial structure on the light absorbable layer; providing a laser beam and irradiating the second surface of the growth substrate, wherein the laser beam wavelength is greater than 1000 nm; and removing the growth substrate. | 02-21-2013 |
20130043786 | WAVELENGTH CONVERSION STRUCTURE, MANUFACTURING METHOD THEREOF, AND LIGHT-EMITTING DEVICE COMPRISING THE WAVELENGTH CONVERSION STRUCTURE - A wavelength conversion structure comprises a first phosphor layer and a second phosphor layer formed on the first phosphor layer, wherein the first phosphor layer comprises a plurality of first phosphor particles, and the second phosphor layer comprises a plurality of second phosphor particles. The average particle size of the second phosphor particles is not equal to that of the first phosphor particles. | 02-21-2013 |
20130032848 | OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME - An optoelectronic device comprises a semiconductor stack comprising a first semiconductor layer, an active layer and a second semiconductor layer, a first electrode electrically connecting with the first semiconductor layer, a second electrode electrically connecting with the second semiconductor layer, wherein there is a smallest distance D | 02-07-2013 |
20130029440 | METHOD FOR FABRICATING SEMICONDUCTOR LIGHT-EMITTING DEVICE - A semiconductor light-emitting device is disclosed. The semiconductor light-emitting device comprises a multilayer epitaxial structure disposed on a substrate. The substrate has a predetermined lattice direction perpendicular to an upper surface thereof, wherein the predetermined lattice direction is angled toward [0 | 01-31-2013 |
20130020609 | SEMICONDUCTOR LIGHT-EMITTING DEVICE HAVING STACKED TRANSPARENT ELECTRODES - This application is related to a semiconductor light-emitting device including a substrate, a semiconductor epitaxial layer over the substrate and having a first surface distant from the substrate, a first transparent conductive layer formed on the first surface, and a second transparent conductive layer formed on the first transparent conductive layer and having a second surface smaller than a first surface of the first transparent conductive layer. | 01-24-2013 |
20130015584 | OPTOELECTRONIC SEMICONDUCTOR DEVICE - An optoelectronic semiconductor device includes a substrate, a semiconductor system having an active layer formed on the substrate and an electrode structure formed on the semiconductor system, wherein the layout of the electrode structure having at least a first conductivity type contact zone or a first conductivity type bonding pad, a second conductivity type bonding pad, a first conductivity type extension electrode, and a second conductivity type extension electrode wherein the first conductivity type extension electrode and the second conductivity type extension electrode have three-dimensional crossover, and partial of the first conductivity type extension electrode and the first conductivity type contact zone or the first conductivity type bonding pad are on the opposite sides of the active layer. | 01-17-2013 |
20130015484 | LED LAMPS - A high power LED lamp has a GaN chip placed over an AlGaInP chip. A reflector is placed between the two chips. Each of the chips has trenches diverting light for output. The chip pair can be arranged to produce white light having a spectral distribution in the red to blue region that is close to that of daylight. Also, the chip pair can be used to provide an RGB lamp or a red-amber-green traffic lamp. The active regions of both chips can be less than 50 microns away from a heat sink. | 01-17-2013 |
20130011949 | METHOD FOR MANUFACTURING HIGH EFFICIENCY LIGHT-EMITTING DIODES - A method of manufacturing a light-emitting device comprising the steps of cutting a substrate by a laser beam to form a cavity in the substrate and generate a by-product directly on the substrate by the cutting, and removing the by-product by a chemical solution containing an acid under a predetermined cleaning temperature. | 01-10-2013 |
20130009186 | LED LAMPS - A high power LED lamp has a GaN chip placed over an AlGaInP chip. A reflector is placed between the two chips. Each of the chips has trenches diverting light for output. The chip pair can be arranged to produce white light having a spectral distribution in the red to blue region that is close to that of daylight. Also, the chip pair can be used to provide an RGB lamp or a red-amber-green traffic lamp. The active regions of both chips can be less than 50 microns away from a heat sink. | 01-10-2013 |
20130003344 | LIGHT-EMITTING DEVICE PACKAGE - A light-emitting diode device is disclosed. The light-emitting diode device includes a carrier including a platform; a transparent substrate formed on the platform including a first surface; a multi-LED structure including a first light-emitting structure formed on the first surface, the first light-emitting structure including a first first-type semiconductor layer, a first second-type semiconductor layer, and a first active layer formed between the first first-type semiconductor layer and the first second-type semiconductor layer; a second light-emitting structure formed on the first surface, the second light-emitting structure including a second first-type semiconductor layer, a second second-type semiconductor layer, and a second active layer formed between the second first-type semiconductor layer and the second second-type semiconductor layer; and a connecting layer formed between the first light-emitting structure and the second light-emitting structure; wherein an angle between the first surface of the transparent substrate and the platform is not equal to zero. | 01-03-2013 |
20120326185 | LIGHT EMITTING DEVICE - A light emitting device including a carrying element having two electric conductors connectable to a power source, a light emitting element disposed on the carrying element and electrically connected to the two electric conductors, and at least one correction element electrically connected to the light emitting element, wherein the light emitting element is adapted to provide a light source upon connection of the two electric conductors with the power source, and the at least one correction element allows the light emitting element to have functions of temperature compensation, voltage correction, or surge absorption. | 12-27-2012 |
20120322185 | LIGHT-EMITTING DEVICE HAVING A ROUGHENED SURFACE WITH DIFFERENT TOPOGRAPHIES - This invention provides an optoelectronic semiconductor device having a rough surface and the manufacturing method thereof. The optoelectronic semiconductor device comprises a semiconductor stack having a rough surface and an electrode layer overlaying the semiconductor stack. The rough surface comprises a first region having a first topography and a second region having a second topography. The method comprises the steps of forming a semiconductor stack on a substrate, forming an electrode layer on the semiconductor stack, thermal treating the semiconductor stack, and wet etching the surface of the semiconductor stack to form a rough surface. | 12-20-2012 |
20120305980 | LED LAMPS - A high power LED lamp has a GaN chip placed over an AlGaInP chip. A reflector is placed between the two chips. Each of the chips has trenches diverting light for output. The chip pair can be arranged to produce white light having a spectral distribution in the red to blue region that is close to that of daylight. Also, the chip pair can be used to provide an RGB lamp or a red-amber-green traffic lamp. The active regions of both chips can be less than 50 microns away from a heat sink. | 12-06-2012 |
20120305978 | LED LAMPS - A high power LED lamp has a GaN chip placed over an AlGaInP chip. A reflector is placed between the two chips. Each of the chips has trenches diverting light for output. The chip pair can be arranged to produce white light having a spectral distribution in the red to blue region that is close to that of daylight. Also, the chip pair can be used to provide an RGB lamp or a red-amber-green traffic lamp. The active regions of both chips can be less than 50 microns away from a heat sink. | 12-06-2012 |
20120241783 | LED ARRAY - An LED array having N light-emitting diode units (N≧3) comprises a permanent substrate, a bonding layer on the permanent substrate, a second conductive layer on the bonding layer, a second isolation layer on the second conductive layer, a crossover metal layer on the second isolation layer, a first isolation layer on the crossover metal layer, a conductive connecting layer on the first isolation layer, an epitaxial structure on the conductive connecting layer, and a first electrode layer on the epitaxial structure. The light-emitting diode units are electrically connected with each other by the crossover metal layer. | 09-27-2012 |
20120211794 | LIGHT-EMITTING DEVICE - This disclosure discloses a light-emitting device. The light-emitting device comprises: a light-emitting stack having an upper surface and a lower surface; a pad, arranged on the upper surface, comprising: a first bonding region; and a second bonding region physically connected to the first bonding region through a connecting region having a connecting width; a first electrode connected to the first bonding region; a second electrode connected to the second bonding region; and a third electrode extending from the pad and arranged between the first electrode and the second electrode. At least one of the first electrode, the second electrode, and the third electrode has a width smaller than the connecting width. | 08-23-2012 |
20120202303 | CUSTOMIZED MANUFACTURING METHOD FOR AN OPTOELECTIRCAL DEVICE - The disclosure provides a customized manufacturing method for an optoelectrical device. The customized manufacturing method comprises the steps of providing a manufacturing flow including a front-end flow, a customized module subsequent to the front-end flow, and a pause step between the front-end flow and the customized module, processing a predetermined amount of semi-manufactured products queued at the pause step, tuning the customized module in accordance with a customer's request, and processing the semi-manufactured products by the tuned customized module to fulfill the customer's request. | 08-09-2012 |
20120168799 | LED LAMPS - A high power LED lamp has a GaN chip placed over an AlGaInP chip. A reflector is placed between the two chips. Each of the chips has trenches diverting light for output. The chip pair can be arranged to produce white light having a spectral distribution in the red to blue region that is close to that of daylight. Also, the chip pair can be used to provide an RGB lamp or a red-amber-green traffic lamp. The active regions of both chips can be less than 50 microns away from a heat sink. | 07-05-2012 |
20120161193 | LED LAMPS - A high power LED lamp has a GaN chip placed over an AlGaInP chip. A reflector is placed between the two chips. Each of the chips has trenches diverting light for output. The chip pair can be arranged to produce white light having a spectral distribution in the red to blue region that is close to that of daylight. Also, the chip pair can be used to provide an RGB lamp or a red-amber-green traffic lamp. The active regions of both chips can be less than 50 microns away from a heat sink. | 06-28-2012 |
20120147605 | LIGHT-EMITTING DEVICE - Disclosed is a light-emitting element comprises a substrate; a light-emitting stack layer disposed on the substrate; wherein the light-emitting stack layer comprises a first semiconductor layer, a first active layer disposed on the first semiconductor layer, a magnetic film layer disposed on the first active layer, a second active layer disposed on the magnetic film layer, and a second semiconductor layer disposed on the second active layer. | 06-14-2012 |
20120146087 | LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A light-emitting device is disclosed. The light-emitting device comprises a substrate, an ion implanted layer on the substrate, a light-emitting stack layer disposed on the ion implanted layer, and an adhesive layer connecting the substrate with the light-emitting stack layer, wherein the adhesive layer comprises a thin silicon film disposed between the ion implanted layer and the light-emitting layer. This invention also discloses a method of manufacturing a light-emitting device comprising the steps of forming a light-emitting stack layer, forming a thin silicon film on the light-emitting stack layer, providing a substrate, forming an ion implanted layer on the substrate, and providing an electrode potential difference to form an oxide layer between the thin silicon film and the ion implanted layer. | 06-14-2012 |
20120138991 | HIGH-EFFICIENCY LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - This invention provides a high-efficiency light-emitting device and the manufacturing method thereof The high-efficiency light-emitting device includes a substrate; a reflective layer; a bonding layer; a first semiconductor layer; an active layer; and a second semiconductor layer formed on the active layer. The second semiconductor layer includes a first surface having a first lower region and a first higher region. | 06-07-2012 |
20120138980 | OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME - An optoelectronic device, comprising: a substrate; a plurality of the first semiconductor rods formed on the substrate, contacted with the substrate, and exposed partial of the first surface of the substrate; a first protection layer formed on the sidewall of the plurality of the first semiconductor rods and the exposed partial of the first surface of the substrate; a first buffer layer formed on the plurality of the first semiconductor rods wherein the first buffer layer having a first surface and a second surface opposite to the first surface, and the plurality of the first semiconductor rods directly contacted with the first surface; and at least one first hollow component formed among the first semiconductor rods, the first surface of the substrate, and the first surface of the first buffer layer and the ratio of the height and the width of the first hollow component is 1/5-3. | 06-07-2012 |
20120132944 | LIGHT-EMITTING DEVICE, LIGHT MIXING DEVICE AND MANUFACTURING METHODS THEREOF - Disclosed is a light-emitting device comprising: a carrier; a light-emitting element disposed on the carrier; a first light guide layer covering the light-emitting element, and disposed on the carrier; a wavelength conversion and light guide layer covering the first light guide layer and the light-emitting element, and disposed on the carrier; and a low refractive index layer disposed between the first light guide layer and the wavelength conversion and light guide layer; wherein the first light guide layer comprises a gradient refractive index, the wavelength conversion and light guide layer comprises a dome shape structure and is used to convert a wavelength of light emitted from the light-emitting element and transmit light, and the low refractive index layer is used to reflect light from the wavelength conversion and light guide layer. | 05-31-2012 |
20120119245 | LIGHT-EMITTING DEVICE - Disclosed is a light-emitting device comprising: a carrier comprising: a first side and a second side; a semiconductor light-emitting stack layer on the first side of the carrier, the semiconductor light-emitting stack layer comprising a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer ; and a first electrode structure electrically coupled to the second conductivity type semiconductor layer, the first electrode structure comprising: a main electrode surrounding the semiconductor light-emitting stack layer; an extending electrode extending from the main electrode onto the second conductivity type semiconductor layer; and an electrode pad coupling to the main electrode. | 05-17-2012 |
20120080697 | LIGHT-EMITTING ELEMENT HAVING A PLURALITY OF CONTACT PARTS - A light-emitting element includes a supportive substrate; a reflective layer formed on the supportive substrate; a transparent layer formed on the reflective layer; a light-emitting stacked layer formed on the transparent layer; an etching-stop layer formed between the transparent layer and the reflective layer; and a plurality of contact parts formed between the light-emitting stacked layer and the transparent layer. | 04-05-2012 |
20120074379 | LIGHT-EMITTING ELEMENT AND THE MANUFACTURING METHOD THEREOF - A light-emitting element includes: a substrate being a monocrystalline structure, comprising a plurality of recesses; and a plurality of first light-emitting stacks formed in the recesses respectively. | 03-29-2012 |
20120068214 | OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME - An optoelectronic device is provided that includes a substrate having a surface and a normal direction perpendicular to the surface, a first semiconductor layer formed on the surface, and at least one hollow component formed between the first semiconductor layer and the surface. A method of fabricating an optoelectronic device is also provided that includes providing a substrate having a surface and a normal direction perpendicular to the surface, forming a first semiconductor layer on the surface, patterning the first semiconductor layer, forming a second semiconductor layer on the substrate and cover the patterned first semiconductor layer, and forming at least one hollow component formed between the first semiconductor layer and the surface. A height of the hollow component varies along with a first direction perpendicular to the normal direction and/or a width of the hollow component varies along with a second direction parallel with the normal direction. | 03-22-2012 |
20120061694 | LIGHT-EMITTING STRUCTURE - An embodiment of the present application discloses a light-emitting structure, comprising a first unit; a second unit; a trench formed between the first unit and the second unit, and having a less steep sidewall and a steeper sidewall steeper than the less steep sidewall; and an electrical connection arranged on the less steep sidewall. | 03-15-2012 |
20120056229 | LIGHT EMITTING STRUCTURE AND MANUFACTURING METHOD THEREOF - A light-emitting structure comprises a semiconductor light-emitting element which includes a first connection point and a second connection point. The light-emitting structure further includes a first electrode electrically connected to the first connection point, and a second electrode electrically connected the second connection point. The first electrode and the second electrode can form a concave on which the semiconductor light-emitting element is located. | 03-08-2012 |
20120056212 | LIGHT-EMITTING DEVICE AND THE MANUFACTURING METHOD THEREOF - A light-emitting device includes: a carrier; a light-emitting structure formed on the carrier, wherein the light-emitting structure has a first surface facing the carrier, a second surface opposite to the first surface, and an active layer between the first surface and the second surface; a plurality of first trenches extended from the first surface and passing through the active layer so a plurality of light-emitting units is defined; and a plurality of second trenches extended from the second surface and passing through the active layer of each of the plurality of light-emitting units. | 03-08-2012 |
20120055532 | SEMICONDUCTOR OPTOELECTRONIC DEVICE - A semiconductor optoelectronic device comprises a growth substrate; a semiconductor epitaxial stack formed on the growth substrate comprising a sacrificial layer with electrical conductivity formed on the growth substrate; a first semiconductor material layer having a first electrical conductivity formed on the sacrificial layer, and a second semiconductor material layer having a second electrical conductivity formed on the first semiconductor material layer; and a first electrode directly formed on the growth substrate and electrically connected to the semiconductor epitaxial stack via the growth substrate. | 03-08-2012 |
20120037886 | LIGHT-EMITTING DIODE DEVICE - A light-emitting diode device is disclosed. The light-emitting diode device includes a carrier including a platform; a transparent substrate formed on the platform including a first surface; a multi-LED structure including a first light-emitting structure formed on the first surface, the first light-emitting structure including a first first-type semiconductor layer, a first second-type semiconductor layer, and a first active layer formed between the first first-type semiconductor layer and the first second-type semiconductor layer; a second light-emitting structure formed on the first surface, the second light-emitting structure including a second first-type semiconductor layer, a second second-type semiconductor layer, and a second active layer formed between the second first-type semiconductor layer and the second second-type semiconductor layer; and a connecting layer formed between the first light-emitting structure and the second light-emitting structure; wherein an angle between the first surface of the transparent substrate and the platform is not equal to zero. | 02-16-2012 |
20120025250 | SEMICONDUCTOR LIGHT-EMITTING DEVICE AND THE MANUFACTURING METHOD THEREOF - This application provides a semiconductor light-emitting device and the manufacturing method thereof. The semiconductor light-emitting device comprises a semiconductor light-emitting structure and a thinned substrate. The semiconductor light-emitting structure comprises a plurality of semiconductor layers and a plurality of first channels, wherein a plurality of first channels has a predetermined depth that penetrating at least two layers of the plurality of semiconductor layers. | 02-02-2012 |
20120018745 | INTEGRATED LIGHTING APPARATUS AND METHOD OF MANUFACTURING THE SAME - An integrated lighting apparatus includes at least a lighting device, a control device comprising an integrated circuit, and a connector that is used to electrically connect the lighting device and the control device. With the combination, the integrated circuit drives the lighting device in accordance with its various designed functionality, thus expands applications of the integrated lighting apparatus. | 01-26-2012 |
20120012867 | MULTI-DIMENSIONAL LIGHT-EMITTING DEVICE - The present application provides a multi-dimensional light-emitting device electrically connected to a power supply system. The multi-dimensional light-emitting device comprises a substrate, a blue light-emitting diode array and one or more phosphor layers. The blue light-emitting diode array, disposed on the substrate, comprises a plurality of blue light-emitting diode chips which are electrically connected. The multi-dimensional light-emitting device comprises a central area and a plurality of peripheral areas, which are arranged around the central area. The phosphor layer covers the central area. When the power supply system provides a high voltage, the central area and the peripheral areas of the multi-dimensional light-emitting device provide a first light and a plurality of second lights, respectively. The first light and the second lights are blended into a mixed light. | 01-19-2012 |
20120007042 | LIGHT EMITTING DEVICE WITH A SINGLE QUANTUM WELL ROD - A light emitting device comprising a first semiconductor layer, a second semiconductor layer and a quantum well layer, wherein the first semiconductor layer and the second semiconductor layer are disposed on the opposite sides of the quantum well layer, the quantum well layer comprising a plurality of quantum well rods which are separated from each other, and each of the quantum well rods has only one quantum well. | 01-12-2012 |
20120000509 | MULTI-DIRECTIONAL SOLAR ENERGY COLLECTOR SYSTEM - The present disclosure provides a multi-directional solar energy collector system. It comprises a light concentration device which includes one or plural light concentration lens and one or plural chambers. By means of the light concentration device, the incoming light can be concentrated once or multiple time, then is guided to the solar cell. The system is able to collect incoming light from various directions without consuming additional power. | 01-05-2012 |
20110316023 | Light-Emitting Device Having A Ramp - A light-emitting device includes a light-emitting stacked layer having an active layer, and a composite substrate located under the light-emitting stacked layer. The composite substrate includes a supportive substrate having a top surface and a bottom surface non-parallel to the active layer; a metal substrate located under the supportive substrate; and a reflective layer located between the supportive substrate and the metal substrate. | 12-29-2011 |
20110312113 | LIGHT-EMITTING DIODE STRUCTURE WITH ELECTRODE PADS OF SIMILAR SURFACE ROUGHNESS AND METHOD FOR MANUFACTURING THE SAME - A light-emitting diode (LED) structure and a method for manufacturing the LED structure are disclosed for promoting the recognition rate of LED chips, wherein a roughness degree of the surface under a first electrode pad of a first conductivity type is made similar to that of the surface under a second electrode pad of a second conductivity type, so that the luster shown from the first electrode pad can be similar to that from the second electrode pad, thus resolving the poor recognition problem of wire-bonding machines caused by different lusters from the first and second electrode pads. | 12-22-2011 |
20110291145 | OPTOELECTRONIC ELEMENT AND MANUFACTURING METHOD THEREOF - An optoelectronic element includes an optoelectronic unit having a first top surface, a first bottom surface opposite to the first top surface, and a lateral surface between the first top surface and the first bottom surface; a first transparent structure covering the lateral surface and exposing the first top surface of the optoelectronic unit; a first insulating layer on the first top surface and the first transparent structure; a second insulating layer on the first insulating layer; a first opening through the first insulating layer and the second insulating layer; and a first conductive layer on the second insulating layer and electrically connecting to the optoelectronic unit via the first opening. | 12-01-2011 |
20110281383 | METHOD FOR MANUFACTURING HIGH EFFICIENCY LIGHT-EMITTING DIODES - A method for manufacturing a light-emitting device comprising the steps of: providing a substrate comprising a first surface and a second surface; forming a plurality of cutting lines on the substrate by a laser beam; cleaning the substrate by a chemical solution; and forming a light-emitting stack on an first surface of the substrate after cleaning the substrate. | 11-17-2011 |
20110272727 | LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME - A light-emitting diode and method for manufacturing the same are described. The light-emitting diode comprises: a conductive substrate including a first surface and a second surface opposite to the first surface; a reflector structure comprising a conductive reflector layer bonding to the first surface of the conductive substrate and a conductive distributed Bragg reflector (DBR) structure stacked on the conductive reflector layer; an illuminant epitaxial structure disposed on the reflector structure; a first electrode disposed on a portion of the illuminant epitaxial structure; and a second electrode bonded to the second surface of the conductive substrate. | 11-10-2011 |
20110266581 | LIGHT-EMITTING DEVICE CONTAINING A COMPOSITE ELECTROPLATED SUBSTRATE - The application is related to a method of forming a substrate of a light-emitting diode by composite electroplating. The application illustrates a light-emitting diode comprising the following elements: a light-emitting epitaxy structure, a reflective layer disposed on the light-emitting epitaxy structure, a seed layer disposed on the reflective layer, a composite electroplating substrate disposed on the seed layer by composite electroplating, and a protection layer disposed on the composite electroplating substrate. | 11-03-2011 |
20110254046 | LIGHT-EMITTING DEVICE - The present invention is related to a light-emitting device. The present invention illustrates a vertical light-emitting device in one embodiment, comprising the following elements: a conductive substrate includes a through-hole, a patterned semiconductor structure disposed on a first surface of the substrate, a first bonding pad and a second bonding pad disposed on a second surface of the substrate, a conductive line passing through the through-hole connecting electrically the semiconductor structure layer, and an insulation layer on at least one sidewall of the through-hole insulates the conductive line form the substrate. The present invention illustrates a horizontal light-emitting device in another embodiment, comprising the following elements: a substrate includes a first tilted sidewall, a patterned semiconductor structure disposed on a first surface of the substrate, a first conductive line is disposed on at least the first tilted sidewall of the substrate and connecting electrically the patterned semiconductor structure. | 10-20-2011 |
20110253979 | LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A light-emitting device and the method for making the same is disclosed. The light-emitting device is a semiconductor device, comprising a growth substrate, an n-type semiconductor layer, a quantum well active layer and a p-type semiconductor layer. It combines the holographic and the quantum well interdiffusion (QWI) to form a photonic crystal light-emitting device having a dielectric constant of two-dimensional periodic variation or a material composition of two-dimensional periodic variation in the quantum well active layer. The photonic crystal light-emitting devices can enhance the internal efficiency and light extraction efficiency. | 10-20-2011 |
20110220873 | LIGHT EMITTING DIODE HAVING A TRANSPARENT SUBSTRATE - A light emitting diode having a transparent substrate and a method for manufacturing the same. The light emitting diode is formed by creating two semiconductor multilayers and bonding them. The first semiconductor multilayer is formed on a non-transparent substrate. The second semiconductor multilayer is created by forming an amorphous interface layer on a transparent substrate. The two semiconductor multilayers are bonded and the non-transparent substrate is removed, leaving a semiconductor multilayer with a transparent substrate. | 09-15-2011 |