Zubkov
Leonid Zubkov, Philadelphia PA
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20110124987 | Methods for Measuring Changes in Optical Properties of Wound Tissue and Correlating Near Infrared Absorption (FNIR) and Diffuse Reflectance Spectroscopy Scattering (DRS) With Tissue Neovascularization and Collagen Concentration to Determine Whether Wound is Healing - Optical changes of tissue during wound healing measured by Near Infrared and Diffuse Reflectance Spectroscopy are shown to correlate with histologic changes. Near Infrared absorption coefficient correlated with blood vessel in-growth over time, while Diffuse Reflectance Spectroscopy (DRS) data correlated with collagen concentration. Changes of optical properties of wound tissue at greater depths are also quantified by Diffuse Photon Density Wave (DPDW) methodology at near infrared wavelengths. The diffusion equation for semi-infinite media is used to calculate the absorption and scattering coefficients based on measurements of phase and amplitude with a frequency domain or time domain device. An increase in the absorption and scattering coefficients and a decrease in blood saturation of the wounds compared to the non wounded sites was observed. The changes correlated with the healing stage of the wound. The methodologies used to collect information regarding the healing state of a wound may be used to clinically assess the efficacy of wound healing agents in a patient (e.g., a diabetic) and as a non-invasive method | 05-26-2011 |
Leonid Zubkov, Philadelphia, PA US
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20110208063 | NON-CONTACT FREQUENCY DOMAIN NEAR INFRARED ABSORPTION (fNIR) DEVICE FOR ASSESSING TISSUE DAMAGE - A device for measuring the progress of healing of a wound over time includes at least one diode laser source that provides respective input wavelengths into at least one source fiber, a first optical switch that sequentially switches wavelengths among the respective input wavelengths into the at least one source fiber, a probe that does not touch the wound dunng use, the probe including the at least one source fiber and at least two detectors spaced thereon, an optical system that provides source light from the at least one source fiber to the wound and that detects light scattered by the wound surface and provides the scattered light to the detectors, and a processing unit responsive to outputs of the detectors for providing at least four independent measurements for calculation of an absorption coefficient/Ia and a scattering coefficient/I's of the light by the wound | 08-25-2011 |
20150025342 | Methods for measuring changes in optical properties of wound tissue and correlating near infrared absorption(fNIR) and diffuse refelectance spectroscopy scattering (DRS) with tissue neovascularization and collagen concetration to determine whether wound is healing - Optical changes of tissue during wound healing measured by Near Infrared and Diffuse Reflectance Spectroscopy are shown to correlate with histologic changes. Near Infrared absorption coefficient correlated with blood vessel in-growth over time, while Diffuse Reflectance Spectroscopy (DRS) data correlated with collagen concentration. Changes of optical properties of wound tissue at greater depths are also quantified by Diffuse Photon Density Wave (DPDW) methodology at near infrared wavelengths. The diffusion equation for semi-infinite media is used to calculate the absorption and scattering coefficients based on measurements of phase and amplitude with a frequency domain or time domain device. An increase in the absorption and scattering coefficients and a decrease in blood saturation of the wounds compared to the non wounded sites was observed. The changes correlated with the healing stage of the wound. The methodologies used to collect information regarding the healing state of a wound may be used to clinically assess the efficacy of wound healing agents in a patient (e.g., a diabetic) and as a non-invasive method | 01-22-2015 |
Leonid Zubkov US
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20150209564 | ULTRASOUND DEVICE AND THERAPEUTIC METHODS - The present invention is directed to an ultrasound device for use in implementing therapeutic treatments and transdermal analyte delivery. The device includes a piezoelectric transducer that efficiently and safely converts electrical energy to ultrasonic waves, and has a unique structure including a piezoelectric element positioned between two opposing, flexible concave covers. The device may be used for various therapeutic purposes including wound healing, tissue stimulation and transdermal analyte delivery. The invention is further directed to a novel analyte delivery system including the ultrasound device and an encapsulated analyte. | 07-30-2015 |
Leonid Zubkov, Festerville, PA US
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20150209564 | ULTRASOUND DEVICE AND THERAPEUTIC METHODS - The present invention is directed to an ultrasound device for use in implementing therapeutic treatments and transdermal analyte delivery. The device includes a piezoelectric transducer that efficiently and safely converts electrical energy to ultrasonic waves, and has a unique structure including a piezoelectric element positioned between two opposing, flexible concave covers. The device may be used for various therapeutic purposes including wound healing, tissue stimulation and transdermal analyte delivery. The invention is further directed to a novel analyte delivery system including the ultrasound device and an encapsulated analyte. | 07-30-2015 |
Vladimir Zubkov, Mountain View, CA US
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20080213997 | SELECTIVE COPPER-SILICON-NITRIDE LAYER FORMATION FOR AN IMPROVED DIELECTRIC FILM/COPPER LINE INTERFACE - A process to form a copper-silicon-nitride layer on a copper surface on a semiconductor wafer is described. The process may include the step of exposing the wafer to a first plasma made from helium. The process may also include exposing the wafer to a second plasma made from a reducing gas, where the second plasma removes copper oxide from the copper surface, and exposing the wafer to silane, where the silane reacts with the copper surface to selectively form copper silicide. The process may further include exposing the wafer to a third plasma made from ammonia and molecular nitrogen to form the copper silicon nitride layer. | 09-04-2008 |
20100096687 | NON-VOLATILE MEMORY HAVING SILICON NITRIDE CHARGE TRAP LAYER - A flash memory device and methods of forming a flash memory device are provided. The flash memory device includes a doped silicon nitride layer having a dopant comprising carbon, boron or oxygen. The doped silicon nitride layer generates a higher number and higher concentration of nitrogen and silicon dangling bonds in the layer and provides an increase in charge holding capacity and charge retention time of the unit cell of a non-volatile memory device. | 04-22-2010 |
20100096688 | NON-VOLATILE MEMORY HAVING CHARGE TRAP LAYER WITH COMPOSITIONAL GRADIENT - A flash memory device and method of forming a flash memory device are provided. The flash memory device includes a silicon nitride layer having a compositional gradient in which the ratio of silicon to nitrogen varies through the thickness of the layer. The silicon nitride layer having a compositional gradient of silicon and nitrogen provides an increase in charge holding capacity and charge retention time of the unit cell of a non-volatile memory device. | 04-22-2010 |
20100099247 | FLASH MEMORY WITH TREATED CHARGE TRAP LAYER - A methods of forming a flash memory device are provided. The flash memory device comprises a silicon dioxide layer on a substrate and a silicon nitride layer that is formed on the silicon dioxide layer. The properties of the silicon nitride layer can be modified by any of: exposing the silicon nitride layer to ultraviolet radiation, exposing the silicon nitride layer to an electron beam, and by plasma treating the silicon nitride layer. A dielectric material is deposited on the silicon nitride layer and a conductive date is formed over the dielectric material. The flash memory device with modified silicon nitride layer provides an increase in charge holding capacity and charge retention time of the unit cell of a non-volatile memory device. | 04-22-2010 |
20110298099 | SILICON DIOXIDE LAYER DEPOSITED WITH BDEAS - A silicon dioxide layer is deposited onto a substrate using a process gas comprising BDEAS and an oxygen-containing gas such as ozone. The silicon dioxide layer can be part of an etch-resistant stack that includes a resist layer. In another version, the silicon dioxide layer is deposited into through holes to form an oxide liner for through-silicon vias. | 12-08-2011 |
20120196452 | METHOD TO INCREASE TENSILE STRESS OF SILICON NITRIDE FILMS USING A POST PECVD DEPOSITION UV CURE - High tensile stress in a deposited layer, such as a silicon nitride layer, may be achieved utilizing one or more techniques employed either alone or in combination. In one embodiment, a silicon nitride film having high tensile stress may be formed by depositing the silicon nitride film in the presence of a porogen. The deposited silicon nitride film may be exposed to at least one treatment selected from a plasma or ultraviolet radiation to liberate the porogen. The silicon nitride film may be densified such that a pore resulting from liberation of the porogen is reduced in size, and Si—N bonds in the silicon nitride film are strained to impart a tensile stress in the silicon nitride film. In another embodiment, tensile stress in a silicon nitride film may be enhanced by depositing a silicon nitride film in the presence of a nitrogen-containing plasma at a temperature of less than about 400° C., and exposing the deposited silicon nitride film to ultraviolet radiation. | 08-02-2012 |
20120202357 | In Situ Vapor Phase Surface Activation Of SiO2 - Methods for preparing a substrate for a subsequent film formation process are described. Methods for preparing a substrate for a subsequent film formation process, without immersion in an aqueous solution, are also described. A process is described that includes disposing a substrate into a process chamber, the substrate having a thermal oxide surface with substantially no reactive surface terminations. The thermal oxide surface is exposed to a partial pressure of water above the saturated vapor pressure at a temperature of the substrate to convert the dense thermal oxide with substantially no reactive surface terminations to a surface with hydroxyl surface terminations. This can occur in the presence of a Lewis base such as ammonia. | 08-09-2012 |