Patent application number | Description | Published |
20110124169 | METHODS OF SELECTIVELY DEPOSITING AN EPITAXIAL LAYER - Methods for selectively depositing an epitaxial layer are provided herein. In some embodiments, providing a substrate having a monocrystalline first surface and a non-monocrystalline second surface; exposing the substrate to a deposition gas to deposit a layer on the first and second surfaces, the layer comprising a first portion deposited on the first surfaces and a second portion deposited on the second surfaces; and exposing the substrate to an etching gas comprising a first gas comprising hydrogen and a halogen and a second gas comprising at least one of a Group III, IV, or V element to selectively etch the first portion of the layer at a slower rate than the second portion of the layer. In some embodiments, the etching gas comprises hydrogen chloride (HCl) and germane (GeH | 05-26-2011 |
20110209660 | METHODS AND APPARATUS FOR DEPOSITION PROCESSES - Methods and apparatus for deposition processes are provided herein. In some embodiments, an apparatus may include a substrate support comprising a susceptor plate having a pocket disposed in an upper surface of the susceptor plate and having a lip formed in the upper surface and circumscribing the pocket, the lip configured to support a substrate on the lip; and a plurality of vents extending from the pocket to the upper surface of the susceptor plate to exhaust gases trapped between the backside of the substrate and the pocket when a substrate is disposed on the lip. Methods of utilizing the inventive apparatus for depositing a layer on a substrate are also disclosed. | 09-01-2011 |
20110277934 | METHODS OF SELECTIVELY DEPOSITING AN EPITAXIAL LAYER - Apparatus for selectively depositing an epitaxial layer are provided herein. In some embodiments, an apparatus for processing a substrate may include a process chamber having a substrate support disposed therein; a deposition gas source coupled to the process chamber; an etching gas source coupled to the process chamber, the etching gas source including a hydrogen and halogen gas source and a germanium gas source; an energy control source to maintain the substrate at a temperature at up to 600 degrees Celsius; and an exhaust system coupled to the process chamber to control the pressure in the process chamber. | 11-17-2011 |
20110306186 | METHODS FOR LOW TEMPERATURE CONDITIONING OF PROCESS CHAMBERS - Methods for removing residue from interior surfaces of process chambers are provided herein. In some embodiments, a method of conditioning interior surfaces of a process chamber may include maintaining a process chamber at a first pressure and at a first temperature of less than about 800 degrees Celsius; providing a process gas to the process chamber at the first pressure and the first temperature, wherein the process gas comprises chlorine and nitrogen to remove residue disposed on interior surfaces of the process chamber; and increasing the pressure in the process chamber from the first pressure to a second pressure while continuing to provide the process gas to the process chamber. | 12-15-2011 |
20120103263 | PRE-HEAT RING DESIGNS TO INCREASE DEPOSITION UNIFORMITY AND SUBSTRATE THROUGHPUT - Embodiments of the present invention generally relates to apparatus for use in film depositions. The apparatus generally include pre-heat rings adapted to be positioned in a processing chamber. In one embodiment, a pre-heat ring includes a ring having an inner edge and an outer edge. The outer edge has a constant radius. The inner edge is oblong-shaped and may have a first portion having a constant radius measured from a center of a circle defined by an outer circumference of the ring. A second portion may have a constant radius measured from a location other than the center of the outer circumference. In another embodiment, a processing chamber includes a pre-heat ring positioned around the periphery of a substrate support. The pre-heat ring includes an inner edge having a first portion, a second portion, and one or more linear portions positioned between the first portion and the second portion. | 05-03-2012 |
20120193623 | CARBON ADDITION FOR LOW RESISTIVITY IN SITU DOPED SILICON EPITAXY - Embodiments of the present invention generally relate to methods of forming epitaxial layers and devices having epitaxial layers. The methods generally include forming a first epitaxial layer including phosphorus and carbon on a substrate, and then forming a second epitaxial layer including phosphorus and carbon on the first epitaxial layer. The second epitaxial layer has a lower phosphorus concentration than the first epitaxial layer, which allows for selective etching of the second epitaxial layer and undesired amorphous silicon or polysilicon deposited during the depositions. The substrate is then exposed to an etchant to remove the second epitaxial layer and undesired amorphous silicon or polysilicon. The carbon present in the first and second epitaxial layers reduces phosphorus diffusion, which allows for higher phosphorus doping concentrations. The increased phosphorus concentrations reduce the resistivity of the final device. The devices include epitaxial layers having a resistivity of less than about 0.381 milliohm-centimeters. | 08-02-2012 |
20120202338 | EPITAXY OF HIGH TENSILE SILICON ALLOY FOR TENSILE STRAIN APPLICATIONS - Embodiments of the present invention generally relate to methods for forming silicon epitaxial layers on semiconductor devices. The methods include forming a silicon epitaxial layer on a substrate at increased pressure and reduced temperature. The silicon epitaxial layer has a phosphorus concentration of about 1×10 | 08-09-2012 |
20120272898 | METHOD AND APPARATUS FOR GAS DELIVERY - Methods and apparatus for gas delivery are disclosed herein. In some embodiments, a gas delivery system includes an ampoule for storing a precursor in solid or liquid form, a first conduit coupled to the ampoule and having a first end coupled to a first gas source to draw a vapor of the precursor from the ampoule into the first conduit, a second conduit coupled to the first conduit at a first junction located downstream of the ampoule and having a first end coupled to a second gas source and a second end coupled to a process chamber, and a heat source configured to heat the ampoule and at least a first portion of the first conduit from the ampoule to the second conduit and to heat only a second portion of the second conduit, wherein the second portion of the second conduit includes the first junction. | 11-01-2012 |
20120273052 | METHOD AND APPARATUS FOR GAS DELIVERY - Methods and apparatus for gas delivery are disclosed herein. In some embodiments, a gas delivery system includes an ampoule for storing a precursor in solid or liquid form, a first conduit coupled to the ampoule and having a first end coupled to a first gas source to draw a vapor of the precursor from the ampoule into the first conduit, a second conduit coupled to the first conduit at a first junction located downstream of the ampoule and having a first end coupled to a second gas source and a second end coupled to a process chamber, and a heat source configured to heat the ampoule and at least a first portion of the first conduit from the ampoule to the second conduit and to heat only a second portion of the second conduit, wherein the second portion of the second conduit includes the first junction. | 11-01-2012 |
20130255784 | GAS DELIVERY SYSTEMS AND METHODS OF USE THEREOF - Gas delivery systems and methods of use thereof is provided herein. In some embodiments, a gas delivery system may include a first gas supply to provide a first gas along a first flow path; a flow divider disposed in the first flow path to divide the first flow path into a plurality of second flow paths leading to a plurality of corresponding gas delivery zones; and a plurality of second gas supplies respectively coupled to corresponding ones of the second flow paths to independently provide a second gas to respective ones of the plurality of second flow paths. | 10-03-2013 |
20130256760 | METHOD FOR FORMING GROUP III/V CONFORMAL LAYERS ON SILICON SUBSTRATES - A method for forming a conformal group III/V layer on a silicon substrate and the resulting substrate with the group III/V layers formed thereon. The method includes removing the native oxide from the substrate, positioning a substrate within a processing chamber, heating the substrate to a first temperature, cooling the substrate to a second temperature, flowing a group III precursor into the processing chamber, maintaining the second temperature while flowing a group III precursor and a group V precursor into the processing chamber until a conformal layer is formed, heating the processing chamber to an annealing temperature, while stopping the flow of the group III precursor, and cooling the processing chamber to the second temperature. Deposition of the III/V layer may be made selective through the use of halide gas etching which preferentially etches dielectric regions. | 10-03-2013 |
20130344688 | Atomic Layer Deposition with Rapid Thermal Treatment - Provided are methods and apparatus for atomic layer deposition of a film with rapid thermal treatment. Methods described can be used to convert an amorphous film to form an epitaxial film with rapid thermal treatment or to selectively deposit a film on a portion of a substrate. A thermal element in the apparatus is capable of globally or locally changing the temperature of the amorphous film or a portion of the amorphous film by temporarily rapidly raising the temperature of the amorphous film converting the film to an epitaxial film. | 12-26-2013 |
20140083450 | CHAMBER CLEAN WITH IN GAS HEATING SOURCE - Methods for conditioning interior surfaces of a process chamber are provided herein. In one embodiment a method of conditioning interior surfaces of a process chamber is provided. The method comprises maintaining a process chamber at a first pressure and at a first temperature of less than about 800 degrees Celsius, providing a process gas to the process chamber at the first pressure and the first temperature, wherein the process gas comprises chlorine (Cl | 03-27-2014 |
20140106547 | EPITAXY OF HIGH TENSILE SILICON ALLOY FOR TENSILE STRAIN APPLICATIONS - Embodiments of the present invention generally relate to methods for forming silicon epitaxial layers on semiconductor devices. The methods include forming a silicon epitaxial layer on a substrate at increased pressure and reduced temperature. The silicon epitaxial layer has a phosphorus concentration of about 1×10 | 04-17-2014 |
20140137801 | EPITAXIAL CHAMBER WITH CUSTOMIZABLE FLOW INJECTION - Apparatus for processing a substrate in a process chamber are provided here. In some embodiments, a gas injector for use in a process chamber includes a first set of outlet ports that provide an angled injection of a first process gas at an angle to a planar surface, and a second set of outlet ports proximate the first set of outlet ports that provide a pressurized laminar flow of a second process gas substantially along the planar surface, the planar surface extending normal to the second set of outlet ports. | 05-22-2014 |
20140159112 | METHOD FOR FORMING GROUP III/V CONFORMAL LAYERS ON SILICON SUBSTRATES - A method for forming a conformal group III/V layer on a silicon substrate and the resulting substrate with the group III/V layers formed thereon. The method includes removing the native oxide from the substrate, positioning a substrate within a processing chamber, heating the substrate to a first temperature, cooling the substrate to a second temperature, flowing a group III precursor into the processing chamber, maintaining the second temperature while flowing a group III precursor and a group V precursor into the processing chamber until a conformal layer is formed, heating the processing chamber to an annealing temperature, while stopping the flow of the group III precursor, and cooling the processing chamber to the second temperature. Deposition of the III/V layer may be made selective through the use of halide gas etching which preferentially etches dielectric regions. | 06-12-2014 |
20140329376 | STRUCTURE AND METHOD OF FORMING METAMORPHIC HETEROEPI MATERIALS AND III-V CHANNEL STRUCTURES ON SI - Embodiments described herein generally relate to a method of fabrication of a device structure comprising Group III-V elements on a substrate. A <111> surface may be formed on a substrate and a Group III-V material may be grown from the <111> surface to form a Group III-V device structure in a trench isolated between a dielectric layer. A final critical dimension of the device structure may be trimmed to achieve a suitably sized node structure. | 11-06-2014 |
20150020734 | STRUCTURE FOR IMPROVED GAS ACTIVATION FOR CROSS-FLOW TYPE THERMAL CVD CHAMBER - Embodiments described herein generally relate to a processing apparatus having a preheat ring for preheating the process gas. The preheat ring is disposed on a ring support. The preheat ring may have a segment adjacent a process gas inlet. The segment includes a top surface, and the top surface includes features to increase the surface area. In one embodiment, the feature is a plurality of protrusions. In another embodiment, the feature is a plurality of linear fins. In another embodiment, the preheat ring includes a first sub ring and a second sub ring disposed on the first sub ring, wherein the features are located on one segment of the second sub ring. | 01-22-2015 |