Patent application number | Description | Published |
20140203360 | REDUCING CONTACT RESISTANCE BY DIRECT SELF-ASSEMBLING - As stated above, methods of forming a source/drain contact for a transistor are disclosed. In one embodiment, a transistor is formed on a semiconductor-on-insulator (SOI) substrate, which includes a semiconductor-on-insulator (SOI) layer, a buried insulator layer and a silicon substrate. This forming can include forming a gate and a source/drain region. A hardmask can then be formed over the transistor and a self-assembling (DSA) polymer can be directed to cover a portion of the source/drain region. A set of trenches can be formed through the hardmask and into the source/drain region using the DSA polymer as a mask. Then the polymer and the hardmask can be stripped, leaving the trenched source/drain region. | 07-24-2014 |
20140312249 | COLORIMETRIC RADIATION DOSIMETRY BASED ON FUNCTIONAL POLYMER AND NANOPARTICLE HYBRID - A method for colorimetric radiation dosimetry includes subjecting an aggregate including a polymeric matrix having uniformly dispersed nanoparticles therein to radiation. The aggregate is soaked in a solution selected to dissolve decomposed pieces of the polymeric matrix to release into the solution nanoparticles from the decomposed pieces. Color of the solution is compared to a reference to determine a dose of radiation based on number of liberated nanoparticles. | 10-23-2014 |
20140315316 | COLORIMETRIC RADIATION DOSIMETRY BASED ON FUNCTIONAL POLYMER AND NANOPARTICLE HYBRID - A method for colorimetric radiation dosimetry includes subjecting an aggregate including a polymeric matrix having uniformly dispersed nanoparticles therein to radiation. The aggregate is soaked in a solution selected to dissolve decomposed pieces of the polymeric matrix to release into the solution nanoparticles from the decomposed pieces. Color of the solution is compared to a reference to determine a dose of radiation based on number of liberated nanoparticles. | 10-23-2014 |
20140326047 | Techniques for Fabricating Janus Sensors - Electromechanical sensors that employ Janus micro/nano-components and techniques for the fabrication thereof are provided. In one aspect, a method of fabricating an electromechanical sensor includes the following steps. A back gate is formed on a substrate. A gate dielectric is deposited over the back gate. An intermediate layer is formed on the back gate having a micro-fluidic channel formed therein. Top electrodes are formed above the micro-fluidic channel. One or more Janus components are placed in the micro-fluidic channel, wherein each of the Janus components has a first portion having an electrically conductive material and a second portion having an electrically insulating material. The micro-fluidic channel is filled with a fluid. The electrically insulating material has a negative surface charge at a pH of the fluid and an isoelectric point at a pH less than the pH of the fluid. | 11-06-2014 |
20140326613 | Techniques for Fabricating Janus Sensors - Electromechanical sensors that employ Janus micro/nano-components and techniques for the fabrication thereof are provided. In one aspect, a method of fabricating an electromechanical sensor includes the following steps. A back gate is formed on a substrate. A gate dielectric is deposited over the back gate. An intermediate layer is formed on the back gate having a micro-fluidic channel formed therein. Top electrodes are formed above the micro-fluidic channel. One or more Janus components are placed in the micro-fluidic channel, wherein each of the Janus components has a first portion having an electrically conductive material and a second portion having an electrically insulating material. The micro-fluidic channel is filled with a fluid. The electrically insulating material has a negative surface charge at a pH of the fluid and an isoelectric point at a pH less than the pH of the fluid. | 11-06-2014 |
20140370671 | RELIABLE ELECTRICAL FUSE WITH LOCALIZED PROGRAMMING AND METHOD OF MAKING THE SAME - An electrical fuse has an anode contact on a surface of a semiconductor substrate. The electrical fuse has a cathode contact on the surface of the semiconductor substrate spaced from the anode contact. The electrical fuse has a link within the substrate electrically interconnecting the anode contact and the cathode contact. The link comprises a semiconductor layer and a silicide layer. The silicide layer extends beyond the anode contact. An opposite end of the silicide layer extends beyond the cathode contact. A silicon germanium region is embedded in the semiconductor layer under the silicide layer, between the anode contact and the cathode contact. | 12-18-2014 |
20150014755 | JANUS COMPLEMENTARY MEMS TRANSISTORS AND CIRCUITS - A method of fabricating an electromechanical device includes the following steps. A first and a second back gate are formed over a substrate. An etch stop layer is formed covering the first and second back gates. Electrodes are formed over the first and second back gates, wherein the electrodes include one or more gate, source, and drain electrodes, wherein gaps are present between the source and drain electrodes. One or more Janus components are placed the gaps, each of which includes a first portion having an electrically conductive material and a second portion having an electrically insulating material, and wherein i) the first or second portion of the Janus components placed in a first one of the gaps has a fixed positive surface charge and ii) the first or second portion of the Janus components placed in a second one of the gaps has a fixed negative surface charge. | 01-15-2015 |
20150255393 | ELECTRICAL FUSE WITH BOTTOM CONTACTS - A method including forming a fuse link after a first fuse contact and a second fuse contact. The fuse link is in direct contact with both the first fuse contact and the second fuse contact. Embodiments of the invention provide an e-fuse that is capable of being connected to a device either through back end of line or by a long contact allowing for sufficient separation between the e-fuse and the device. | 09-10-2015 |