| Patent application number | Description | Published |
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| 20130058024 | FORMED ARTICLE, METHOD FOR PRODUCING THE SAME, ELECTRONIC DEVICE MEMBER, AND ELECTRONIC DEVICE - Provided is a formed article comprising at least a gas barrier layer, the gas barrier layer being formed of a material that includes silicon atoms, oxygen atoms, and carbon atoms, a carbon atom content, a silicon atom content, and an oxygen atom content in a surface layer part of the gas barrier layer determined by XPS elemental analysis being 10.0 to 28.0%, 18.0 to 28.0%, and 48.0 to 66.0%, respectively, based on a total content (=100 atom %) of silicon atoms, oxygen atoms, and carbon atoms, and the formed article having a water vapor transmission rate at a temperature of 40° C. and a relative humidity of 90% of 5.3 g/m | 03-07-2013 |
| 20130224503 | FORMED BODY, PRODUCTION METHOD THEREOF, ELECTRONIC DEVICE MEMBER AND ELECTRONIC DEVICE - The present invention is a formed article sequentially including a base layer, a primer layer, and a gas barrier layer, the primer layer being formed of a material that includes at least a carbon atom, an oxygen atom, and a silicon atom, and is characterized in that a peak position of binding energy of 2p electrons of the silicon atom as determined by X-ray photoelectron spectroscopy (XPS) is 101.5 to 104 eV, and the gas barrier layer (I) being a layer obtained by implanting ions into a polymer layer that includes at least one compound selected from a group consisting of a polysilazane compound, a polyorganosiloxane compound, a polycarbosilane compound, and a polysilane compound, or (II) being formed of a material that includes at least an oxygen atom and a silicon atom, a surface layer part of the gas barrier layer having an oxygen atom content rate of 60 to 75%, a nitrogen atom content rate of 0 to 10%, and a silicon atom content rate of 25 to 35%, based on a total content rate of oxygen atoms, nitrogen atoms, and silicon atoms, and the surface layer part of the gas barrier layer having a film density of 2.4 to 4.0 g/cm | 08-29-2013 |
| 20130230730 | TRANSPARENT CONDUCTIVE FILM, PRODUCTION METHOD THEREFOR, MATERIAL FOR ELECTRONIC DEVICE, AND ELECTRONIC DEVICE - The present invention provides a transparent conductive film including a base layer, a gas barrier layer, and a transparent conductive layer, the gas barrier layer being formed of a material that includes at least oxygen atoms, carbon atoms, and silicon atoms, the gas barrier layer including an area (A) in which an oxygen atom content rate gradually decreases, and a carbon atom content rate gradually increases from a surface in a depth direction, the area (A) including a partial area (A1) and a partial area (A2), the partial area (A1) having an oxygen atom content rate of 20 to 55%, a carbon atom content rate of 25 to 70%, and a silicon atom content rate of 5 to 20%, based on a total content rate of oxygen atoms, carbon atoms, and silicon atoms, and the partial area (A2) having an oxygen atom content rate of 1 to 15%, a carbon atom content rate of 72 to 87%, and a silicon atom content rate of 7 to 18%, based on a total content rate of oxygen atoms, carbon atoms, and silicon atoms. | 09-05-2013 |
| 20130244044 | GAS-BARRIER FILM, PROCESS FOR PRODUCING SAME, MEMBER FOR ELECTRONIC DEVICE, AND ELECTRONIC DEVICE - The present invention provides a gas barrier film including a base layer, and a gas barrier layer that is provided on at least one side of the base layer, the base layer including a resin having a glass transition temperature (Tg) of more than 130° C., the gas barrier layer being formed of a material that includes at least an oxygen atom and a silicon atom, a surface layer part of the gas barrier layer having an oxygen atom content rate of 60 to 75%, a nitrogen atom content rate of 0 to 10%, and a silicon atom content rate of 25 to 35%, based on a total content rate of oxygen atoms, nitrogen atoms, and silicon atoms, and the surface layer part of the gas barrier layer having a film density of 2.4 to 4.0 g/cm | 09-19-2013 |
