Patent application number | Description | Published |
20140048847 | DIODE, SEMICONDUCTOR DEVICE, AND MOSFET - Disclosed is a technique capable of reducing loss at the time of switching in a diode. A diode disclosed in the present specification includes a cathode electrode, a cathode region made of a first conductivity type semiconductor, a drift region made of a low concentration first conductivity type semiconductor, an anode region made of a second conductivity type semiconductor, an anode electrode made of metal, a barrier region formed between the drift region and the anode region and made of a first conductivity type semiconductor having a concentration higher than that of the drift region, and a pillar region formed so as to connect the barrier region to the anode electrode and made of a first conductivity type semiconductor having a concentration higher than that of the barrier region. The pillar region and the anode are connected through a Schottky junction. | 02-20-2014 |
20140231867 | DIODE AND SEMICONDUCTOR DEVICE INCLUDING BUILT-IN DIODE - A diode is provided with a pillar region formed so as to extend between a barrier region and an anode electrode, contact the barrier region, and made of a first conductivity type semiconductor having a concentration higher than that of the barrier region; and a barrier height adjusting region formed so as to be located between the pillar region and the anode electrode, and contact the pillar region and the anode electrode. The barrier height adjusting region includes at least one component selected from the group consisting of a second conductivity type semiconductor having a concentration lower than that of an anode region, the first conductivity type semiconductor having a concentration lower than that of the pillar region, and an i-type semiconductor. The barrier height adjusting region and the anode electrode are connected through a Schottky junction. | 08-21-2014 |
20140252408 | REVERSE CONDUCTING IGBT - A reverse conducting IGBT that includes an insulated gate; a semiconductor layer having a first conductivity type drift region, a second conductivity type body region, a first conductivity type emitter region, and a second conductivity type intermediate region; and an emitter electrode provided on a surface of the semiconductor layer. The first conductivity type drift region of the semiconductor layer contacts the insulated gate. The second conductivity type body region of the semiconductor layer is provided on the drift region and contacts the insulated gate. The first conductivity type emitter region of the semiconductor layer is provided on the body region and contacts the insulated gate. The second conductivity type intermediate region of the semiconductor layer is provided on the emitter region and is interposed between the emitter region and the emitter electrode. | 09-11-2014 |
20150206960 | SEMICONDUCTOR DEVICE - A semiconductor device | 07-23-2015 |
20150214217 | SEMICONDUCTOR DEVICE - A semiconductor substrate comprises an IGBT region and a diode region. The IGBT region comprises: an n-type emitter region; a p-type IGBT body region; an n-type IGBT barrier region; an n-type IGBT drift region; a p-type collector region; a first trench; a first insulating layer; and a first gate electrode. The diode region comprises: a p-type diode top body region; an n-type diode barrier region; a p-type diode bottom body region; an n-type cathode region; a second trench; a second insulating layer; and a second gate electrode. An n-type impurity density of a specific part of the diode barrier region making contact with the second insulating layer is higher than an n-type impurity density of the IGBT barrier region. | 07-30-2015 |
20150249083 | A SEMICONDUCTOR DEVICE COMPRISING AN DIODE REGION AND AN IGBT REGION - A technology for inhibiting gate interference in an RC-IGBT employing a diode structure having Schottky connections is provided. A semiconductor device includes a semiconductor substrate including a diode region and an IGBT region. In this semiconductor device, the diode region includes: a p-type anode region connected to an anode electrode by an Ohmic contact; a plurality of n-type pillar regions connected to the anode electrode by Schottky contacts; an n-type barrier region; an n-type diode drift region; and an n-type cathode region. An on-resistance of a first pillar region with respect to the anode electrode is higher than an on-resistance of a second pillar region with respect to the anode electrode. The second pillar region is located at a position close to the IGBT region. | 09-03-2015 |