Patent application number | Description | Published |
20080308725 | SEMICONDUCTOR DEVICE INSPECTION APPARATUS - A semiconductor device inspection apparatus having a noise subtraction function includes an electron gun, a stage for holding a sample, a main detector for detecting a signal discharged from the sample, and at least one or more sub detector for detecting noise generated from the sample or apparatus so that there can be obtained an image in which the noise caused by discharge generated on the sample or in the apparatus is removed from the signal. The noise subtraction function subtracts the noise detected by the sub detector from the signal detected by the main detector to remove or reduce the noise from the signal. | 12-18-2008 |
20090026369 | Electron Beam Inspection System and an Image Generation Method for an Electron Beam Inspection System - An object of the present invention is to provide an inspection system using a scanning electron microscope that detects a high-precision electron beam image and at the same time, removes restrictions for a low sampling rate, which presents a problem at this point, of an AD converter element and an inspection method. | 01-29-2009 |
20090208092 | APPERANCE INSPECTION APPARATUS WITH SCANNING ELECTRON MICROSCOPE AND IMAGE DATA PROCESSING METHOD USING SCANNING ELECTRON MICROSCOPE - The present invention provides an appearance inspection apparatus that allows a user to give precedence to either defect detection performance or throughput. The appearance inspection apparatus allows a user to select the frequency of a digital image signal or the ratio of the frequency of the digital image signal to a sampling rate. Further, a user is allowed to select either throughput improvement or S/N improvement to prioritize. | 08-20-2009 |
20100314542 | SEMICONDUCTOR DEVICE INSPECTION APPARATUS - A semiconductor device inspection apparatus having a noise subtraction function includes an electron gun, a stage for holding a sample, a main detector for detecting a signal discharged from the sample, and at least one or more sub detector for detecting noise generated from the sample or apparatus so that there can be obtained an image in which the noise caused by discharge generated on the sample or in the apparatus is removed from the signal. The noise subtraction function subtracts the noise detected by the sub detector from the signal detected by the main detector to remove or reduce the noise from the signal. | 12-16-2010 |
20110278452 | PATTERN CHECK DEVICE AND PATTERN CHECK METHOD - Provided is a pattern inspection apparatus including: a charge formation means which forms charge on a surface of a substrate ( | 11-17-2011 |
20120091339 | CHARGED-PARTICLE MICROSCOPE DEVICE, AND METHOD OF CONTROLLING CHARGED-PARTICLE BEAMS - A charged-particle microscope device and a method of controlling charged-particle beams are provided, which are capable of signal detection at the time when the charged state of an observation sample or a defect portion becomes optimum. Charge accumulation-waiting time T from an initial irradiation with an electron beam | 04-19-2012 |
20120292506 | SAMPLE OBSERVATION METHOD USING ELECTRON BEAMS AND ELECTRON MICROSCOPE - A disclosed method for observing the structure and characteristics of a specimen by an electron microscope realizes high-density charge accumulation on a specimen and improves the quality of voltage contrast images. For structural observation of a specimen and evaluation of its electrical characteristic using an electron beam, charging the specimen is performed. In this charging process, high-density charge accumulation on the specimen is achieved by irradiating the specimen with an electron beam set to have injection energy that falls within an injection energy band for which high charging efficiency is attained during electron beam irradiation and changing irradiation energy, while maintaining the injection energy. | 11-22-2012 |
20120305768 | Circuit-Pattern Inspection Device - Provided is a circuit-pattern inspection device which enables efficient inspection of a semiconductor wafer by selectively inspecting areas on the semiconductor wafer, such as boundaries between patterns thereon, where defects are likely to occur during the step of producing the semiconductor wafer while changing the beam scanning direction for each area. Two-dimensional beam-deflection control is employed for inspection operations in a continuous-stage-movement-type circuit-pattern inspection device in which only one-dimensional scanning has been employed conventionally. That is, by employing a combination of an electron-beam-deflection control in a first direction parallel to the stage-movement direction and an electron-beam-deflection control in a second direction intersecting the stage-movement direction, it is possible to obtain an image of any desired area for inspection that is set within a swath. The amplitude of deflection signals for the electron-beam-deflection and the rise and fall timings of the signals are suitably controlled according to inspection conditions. | 12-06-2012 |
20130313430 | CHARGED PARTICLE BEAM DEVICE - Provided is a charged particle beam device or charged particle microscope permitting observation of even a large-sized specimen in the air atmosphere or a gaseous atmosphere. | 11-28-2013 |