Patent application number | Description | Published |
20100024558 | METHOD OF EVALUATION USING ULTRASONIC WAVES - The intensity of first reflected ultrasonic waves reflected from an end of a first electrode tip is measured while the electrode tip is separated from a workpiece. The intensity of second reflected waves reflected from the end of the electrode tip is measured while the electrode tip contacts with the workpiece. Based on the above intensities, an intensity ratio (reflectance) and the fraction of the waves entering the workpiece are determined from the following equations. | 02-04-2010 |
20110180518 | RESISTANCE WELDING METHOD - A resistance welding method, which resistance-welds a pair of workpieces by gripping the workpieces with a pair of electrode tips under a prescribed welding pressure, and supplies a welding current through the electrode tips to the workpieces, includes the steps of detecting a change in an amount of expansion of a nugget produced in the workpieces, along a direction in which the electrode tips grip the workpieces therebetween, determining whether the detected change is smaller than a threshold value or not, and gradually increasing the welding current flowing through the workpieces after the detected change is judged as being smaller than the threshold value. | 07-28-2011 |
20110233174 | SPOT WELDING METHOD - For spot-welding a plurality of metal workpieces, the metal workpieces are gripped and pressed under a pressing force by a pair of electrode tips, thereby forming a contact interface between the metal workpieces. Then, an electric current is passed between the electrode tips, and it is determined whether the contact interface is melted or not. Simultaneously when it is judged that the contact interface is melted, the pressing force applied from the electrode tips to the metal workpieces is reduced to such a level that the electrode tips and the metal workpieces are kept in contact with each other, the metal workpieces are kept in contact with each other, and the electric current keeps flowing between the electrode tips. | 09-29-2011 |
20130153544 | WELDING METHOD AND WELDING DEVICE - A resistance welding device is provided with a lower tip and an upper tip that serve as welding tips, and pressing rods that serve as pressing members. The upper tip and the pressing rods press a stacked body, which is to be welded, from the metallic plate side, which is the outermost member of the stacked body. The lower tip presses the stacked body from the lowermost metallic plate side. In this state, and electric current is conducted from the upper tip to the lower tip. | 06-20-2013 |
Patent application number | Description | Published |
20150108600 | METHOD PROVIDING AN EPITAXIAL GROWTH HAVING A REDUCTION IN DEFECTS AND RESULTING STRUCTURE - Disclosed are methods and resulting structures which provide an opening for epitaxial growth, the opening having an associated projection for reducing the size of the contact area on a substrate at which growth begins. During growth, the epitaxial material grows vertically from the contact area and laterally over the projection. The projection provides a stress relaxation region for the lateral growth to reduce dislocation and stacking faults at the side edges of the grown epitaxial material. | 04-23-2015 |
20150325645 | METHOD PROVIDING AN EPITAXIAL GROWTH HAVING A REDUCTION IN DEFECTS AND RESULTING STRUCTURE - Disclosed are methods and resulting structures which provide an opening for epitaxial growth, the opening having an associated projection for reducing the size of the contact area on a substrate at which growth begins. During growth, the epitaxial material grows vertically from the contact area and laterally over the projection. The projection provides a stress relaxation region for the lateral growth to reduce dislocation and stacking faults at the side edges of the grown epitaxial material. | 11-12-2015 |
20150333143 | Memory Arrays - Some embodiments include a memory array which has a stack of alternating first and second levels. Channel material pillars extend through the stack, and vertically-stacked memory cell strings are along the channel material pillars. A common source is under the stack and electrically coupled to the channel material pillars. The common source has conductive protective material over and directly against metal silicide, with the conductive protective material being a composition other than metal silicide. Some embodiments include methods of fabricating integrated structures. | 11-19-2015 |
20160093688 | SOURCE-CHANNEL INTERACTION IN 3D CIRCUIT - A multilayer source provides charge carriers to a multitier channel connector. The source includes a metal silicide layer on a substrate and a metal nitride layer between the metal silicide layer and the channel. The metal silicide and the metal nitride are processed without an intervening oxide layer between them. In one embodiment, the source further includes a silicon layer between the metal nitride layer and the channel. The silicon layer can also be processed without an intervening oxide layer. Thus, the source does not have an intervening oxide layer from the substrate to the channel. | 03-31-2016 |
20160099252 | MEMORY HAVING A CONTINUOUS CHANNEL - The present disclosure includes memory having a continuous channel, and methods of processing the same. A number of embodiments include forming a vertical stack having memory cells connected in series between a source select gate and a drain select gate, wherein forming the vertical stack includes forming a continuous channel for the source select gate, the memory cells, and the drain select gate, and removing a portion of the continuous channel for the drain select gate such that the continuous channel is thinner for the drain select gate than for the memory cells and the source select gate. | 04-07-2016 |
Patent application number | Description | Published |
20120261837 | SEMICONDUCTOR DEVICE - A semiconductor device may include, but is not limited to: a wiring hoard; and first and second chips stacked over the wiring board. The wiring board includes a plurality of first data terminals and a plurality of second data terminals. One of the first and second chips is sandwiched between the wiring board and the other of the first and second chips. The first chip includes a plurality of first data pads. The second chip includes a plurality of second data pads and a plurality of third data pads. The first data terminals of the wiring board are electrically connected respectively to the first data pads of the first chip and further respectively to the second data pads of the second chip. The second data terminals are electrically connected respectively to the third data pads of the second chip and electrically disconnected from the first chip. | 10-18-2012 |
20130147042 | SEMICONDUCTOR DEVICE - A semiconductor device includes an insulating substrate including a first surface and an opposing second surface, and a semiconductor chip. The semiconductor chip is mounted over the first surface, includes signal electrodes, power-supply electrodes and ground electrodes, which connect to pads on the first surface of the insulating substrate. Lands provided on the second surface of the insulating substrate include signal lands, power-supply lands and ground lands through vias penetrate from the first surface to the second surface of the insulating substrate, and include signal vias electrically connected the signal connection pads to the signal lands, power-supply vias electrically connected the power-supply connection pads to the power-supply lands and ground vias electrically connected the ground connection pads to the ground lands. At least one of the signal vias are closer to the connection pads than immediately adjacent one of the power-supply vias or the ground vias. | 06-13-2013 |
20150091170 | SEMICONDUCTOR DEVICE - A semiconductor device includes an insulating substrate including a first surface and an opposing second surface, and a semiconductor chip. The semiconductor chip is mounted over the first surface, includes signal electrodes, power-supply electrodes and ground electrodes, which connect to pads on the first surface of the insulating substrate. Lands provided on the second surface of the insulating substrate include signal lands, power-supply lands and ground lands through vias penetrate from the first surface to the second surface of the insulating substrate, and include signal vias electrically connected the signal connection pads to the signal lands, power-supply vias electrically connected the power-supply connection pads to the power-supply lands and ground vias electrically connected the ground connection pads to the ground lands. At least one of the signal vias are closer to the connection pads than immediately adjacent one of the power-supply vias or the ground vias. | 04-02-2015 |
Patent application number | Description | Published |
20130069182 | MAGNETORESISTIVE EFFECT ELEMENT, MAGNETIC MEMORY, AND MAGNETORESISTIVE EFFECT ELEMENT MANUFACTURING METHOD - According to one embodiment, a magnetoresistive effect element includes a first magnetic film having magnetic anisotropy and an invariable magnetization direction in a direction perpendicular to a film plane, a second magnetic film having magnetic anisotropy and a variable magnetization direction in the direction perpendicular to the film plane, and a nonmagnetic film between the first magnetic film and the second magnetic film. At least one of the first and second magnetic films includes a first magnetic layer. The first magnetic layer includes a rare earth metal, a transition metal, and boron. | 03-21-2013 |
20130249026 | MAGNETORESISTIVE ELEMENT AND MAGNETORESISTIVE MEMORY - According to one embodiment, a magnetoresistive element includes a first magnetic film having a variable magnetization direction, a second magnetic film having an invariable magnetization direction, and a magnesium oxide film provided between the first magnetic film and the second magnetic film and being in contact with both the first magnetic film and the second magnetic film, and doped with at least one element selected from a first group consisting of copper, silver, and gold. | 09-26-2013 |
20130307099 | MAGNETIC MEMORY ELEMENT AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a magnetic memory element includes a first magnetic layer having a first surface and a second surface being opposite to the first surface, a second magnetic layer, an intermediate layer which is provided between the first surface of the first magnetic layer and the second magnetic layer, a layer which is provided on the second surface of the first magnetic layer, the layer containing B and at least one element selected from Hf, Al, and Mg, and an insulating layer which is provided on a sidewall of the intermediate layer, the insulating layer containing at least one element selected from the Hf, Al, and Mg contained in the layer. | 11-21-2013 |
20140131649 | MAGNETORESISTANCE ELEMENT AND MAGNETIC MEMORY - According to one embodiment, a magnetoresistance element includes a first magnetic layer having first and second surfaces, a second magnetic layer, an intermediate layer provided between the first surface and the second magnetic layer, a first layer provided on the second surface, containing B and at least one element selected from Hf, Al, Mg, and Ti and having third and fourth surfaces, a second layer provided on the fourth surface and containing B and at least one element selected from Hf, Al, and Mg, and an insulating layer provided on a sidewall of the intermediate layer and containing at least one element selected from the Hf, Al, and Mg contained in the second layer. | 05-15-2014 |
Patent application number | Description | Published |
20130224834 | ANTI-ANDROGENIC AGENT, SEBUM SECRETION BLOCKER, HAIR GROWTH STIMULANT, AND FOOD OR BEVERAGE - Provision of an anti-androgenic agent which has a strong anti-androgenic action, is free of side effects and very safe, and a sebum secretion blocker and a hair growth stimulant containing the anti-androgenic agent as an active ingredient. Provided are the anti-androgenic agent comprising lactoferrin, the sebum secretion blocker containing the anti-androgenic agent as an active ingredient, the hair growth stimulant containing the anti-androgenic agent as an active ingredient, and a food or drink product comprising the anti-androgenic agent containing lactoferrin as an active ingredient. | 08-29-2013 |
20140057840 | ANTI-ANDROGENIC AGENT, SEBUM SECRETION BLOCKER, HAIR GROWTH STIMULANT, AND FOOD OR BEVERAGE - Provision of an anti-androgenic agent which has a strong anti-androgenic action, is free of side effects and very safe, and a sebum secretion blocker and a hair growth stimulant containing the anti-androgenic agent as an active ingredient. Provided are the anti-androgenic agent comprising lactoferrin, the sebum secretion blocker containing the anti-androgenic agent as an active ingredient, the hair growth stimulant containing the anti-androgenic agent as an active ingredient, and a food or drink product comprising the anti-androgenic agent containing lactoferrin as an active ingredient. | 02-27-2014 |
Patent application number | Description | Published |
20100036523 | VACUUM PROCESSING APPARATUS - A vacuum processing apparatus includes a vacuum chamber capable of keeping a first pressure lower than an atmospheric pressure, a driving source disposed in the vacuum chamber, an electric power supply mechanism including a primary side mechanism disposed outside the vacuum chamber for supplying electric power to the driving source and a secondary side mechanism disposed in the vacuum chamber for receiving the electric power from the primary side mechanism in a contactless relationship, and a vessel capable of accommodating airtightly the secondary side mechanism under a second pressure higher than the first pressure. | 02-11-2010 |
20100204881 | DAMPING APPARATUS FOR REDUCING VIBRATION OF AUTOMOBILE BODY - A damping apparatus for an automobile is provided, capable of ensuring a high level of reliability while obtaining excellent damping effect with simple configuration. The damping apparatus for an automobile that reduces vibrations of an automobile body may include an actuator that is attached to the automobile body and drives an auxiliary mass; a current detector that detects a current flowing through an armature of the actuator; a section that detects a terminal voltage applied to the actuator; a calculation circuit that calculates an induced voltage of the actuator, and further calculates at least one of the relative velocity, relative displacement, and relative acceleration of the actuator, based on a current detected by the current detector and the terminal voltage; and a control circuit that drive-controls the actuator based on at least one of the relative velocity, relative displacement, and relative acceleration of the actuator calculated by the calculation circuit. | 08-12-2010 |
20120193847 | DAMPING APPARATUS FOR REDUCING VIBRATION OF AUTOMOBILE BODY - A damping apparatus for an automobile is provided, capable of ensuring a high level of reliability while obtaining excellent damping effect with simple configuration. The damping apparatus for an automobile that reduces vibrations of an automobile body may include an actuator that is attached to the automobile body and drives an auxiliary mass; a current detector that detects a current flowing through an armature of the actuator; a section that detects a terminal voltage applied to the actuator; a calculation circuit that calculates an induced voltage of the actuator, and further calculates at least one of the relative velocity, relative displacement, and relative acceleration of the actuator, based on a current detected by the current detector and the terminal voltage; and a control circuit that drive-controls the actuator based on at least one of the relative velocity, relative displacement, and relative acceleration of the actuator calculated by the calculation circuit. | 08-02-2012 |
20120197490 | DAMPING APPARATUS FOR REDUCING VIBRATION OF AUTOMOBILE BODY - A damping apparatus for an automobile is provided, capable of ensuring a high level of reliability while obtaining excellent damping effect with simple configuration. The damping apparatus for an automobile that reduces vibrations of an automobile body may include an actuator that is attached to the automobile body and drives an auxiliary mass; a current detector that detects a current flowing through an armature of the actuator; a section that detects a terminal voltage applied to the actuator; a calculation circuit that calculates an induced voltage of the actuator, and further calculates at least one of the relative velocity, relative displacement, and relative acceleration of the actuator, based on a current detected by the current detector and the terminal voltage; and a control circuit that drive-controls the actuator based on at least one of the relative velocity, relative displacement, and relative acceleration of the actuator calculated by the calculation circuit. | 08-02-2012 |
20120197491 | DAMPING APPARATUS FOR REDUCING VIBRATION OF AUTOMOBILE BODY - A damping apparatus for an automobile is provided, capable of ensuring a high level of reliability while obtaining excellent damping effect with simple configuration. The damping apparatus for an automobile that reduces vibrations of an automobile body may include an actuator that is attached to the automobile body and drives an auxiliary mass; a current detector that detects a current flowing through an armature of the actuator; a section that detects a terminal voltage applied to the actuator; a calculation circuit that calculates an induced voltage of the actuator, and further calculates at least one of the relative velocity, relative displacement, and relative acceleration of the actuator, based on a current detected by the current detector and the terminal voltage; and a control circuit that drive-controls the actuator based on at least one of the relative velocity, relative displacement, and relative acceleration of the actuator calculated by the calculation circuit. | 08-02-2012 |
20120217108 | DAMPING APPARATUS FOR REDUCING VIBRATION OF AUTOMOBILE BODY - A damping apparatus for an automobile is provided, capable of ensuring a high level of reliability while obtaining excellent damping effect with simple configuration. The damping apparatus for an automobile that reduces vibrations of an automobile body may include an actuator that is attached to the automobile body and drives an auxiliary mass; a current detector that detects a current flowing through an armature of the actuator; a section that detects a terminal voltage applied to the actuator; a calculation circuit that calculates an induced voltage of the actuator, and further calculates at least one of the relative velocity, relative displacement, and relative acceleration of the actuator, based on a current detected by the current detector and the terminal voltage; and a control circuit that drive-controls the actuator based on at least one of the relative velocity, relative displacement, and relative acceleration of the actuator calculated by the calculation circuit. | 08-30-2012 |
20120222929 | VIBRATION DAMPING DEVICE, CONTROL METHOD FOR VIBRATION DAMPING DEVICE, OFFSET CORRECTION METHOD FOR VIBRATION DAMPING DEVICE, AND BLADE SPRING - An automobile vibration damping device for an automobile in which a power plant in which an engine, a transmission and the like are combined is supported by a vehicle body, including a vibrating means that generates vibration separate from vibration of the engine. Thereby, it is possible to reduce the vibration amplitude of a seat portion by the reaction force of the vibrating means. Also, if the vibration mode of the vehicle body is adjusted so as to become a node in the vicinity of the seat portion, the vibration amplitude decreases in the vicinity of the seat portion, and improves riding comfort. | 09-06-2012 |
20130306743 | ANTENNA FOR DIPOLE-TYPE IC TAG, ANTENNA ROLL, AND USAGE METHOD FOR IC TAG - To provide an antenna for dipole-type IC tag, which can conform to various IC chip specifications and communication frequencies in a wide area without causing an increase in the size of antenna, while advantageously suppressing a decrease in a communication distance caused by a defect part in an antenna pattern, in an antenna for dipole-type IC tag, an antenna radiation part is configured by extending an antenna wire in a radiation part extending direction, while repeatedly forming a pair of branch paths that branches in a direction intersecting with the radiation part extending direction, and a connection path which connects the pair of branch paths. The connection path is configured to extend in the radiation part extending direction from a junction of a pair of branch paths to a branch point of a next pair of branch paths. | 11-21-2013 |
Patent application number | Description | Published |
20120055903 | FLUX-CORED WELDING WIRE AND METHOD FOR ARC OVERLAY WELDING USING THE SAME - To provide a flux-cored welding wire and a method for arc overlay welding attaining excellent weldability and low dilution ratio and obtaining a weld bead excellent in corrosion resistance in overlay welding using the flux-cored welding wire having an advantage of high deposition rate and deposition efficiency. The flux-cored welding wire for gas shielded arc welding including flux filled up in an outer sheath and using pure Ar as a shielding gas contains, as percentage to the total mass of the flux-cored welding wire, C: 0.20 mass % or below, Si: 15.00 mass % or below, Mn: 20.00 mass % or below, P: 0.0500 mass % or below, S: 0.0500 mass % or below, and Cr: 15.0-50.0 mass %, with the remainder being Fe and inevitable impurities. | 03-08-2012 |
20120118936 | Ni BASE ALLOY SOLID WIRE FOR WELDING - An object of the present invention is to provide a Ni base alloy solid wire for welding, which has excellent cracking resistance to ductility dip cracking in weld metal, can increase the tensile strength of the weld metal to not less than the tensile strength of the base material, and has excellent weldability. The present invention provides a solid wire which has a composition containing Cr: 27.0 to 31.5 mass %, Ti: 0.50 to 0.90 mass %, Nb: 0.40 to 0.70 mass %, Ta: 0.10 to 0.30 mass %, C: 0.010 to 0.030 mass %, and Fe: 5.0 to 11.0 mass %, and is regulated to Al: 0.10 mass % or less, N: 0.020 mass % or less, Zr 0.005 mass % or less, P:0.010 mass % or less, S: 0.0050 mass % or less, Si: 0.50 mass % or less, and Mn: 1.00 mass % or less, with the balance including Ni and inevitable impurities. | 05-17-2012 |
20120276384 | NI-BASE ALLOY WELD METAL AND NI-BASE ALLOY COVERED ELECTRODE - The contents of Cr, Fe, Mn, Ti, Si, Cu, N, Al, C, Mg, Mo, B, Zr, and Nb+Ta in a Ni-base alloy weld metal are properly specified and the contents of Co, P, and S in incidental impurities are controlled. In particular, a weld metal having high cracking resistance is formed by specifying the Mn content in a proper range and restricting the contents of B and Zr at low levels. Regarding a Ni-base alloy covered electrode, by specifying the contents of a slag-forming agent, a metal fluoride, and a carbonate serving as flux components in proper ranges and controlling the contents of Mn, Nb+Ta, and Fe in a flux, good welding workability is achieved and a weld metal having good bead appearance is formed. | 11-01-2012 |
20130306602 | NI-BASE ALLOY WELD METAL, STRIP ELECTRODE, AND WELDING METHOD - A weld metal contains Cr: 28.0% to 31.5% by mass, Fe: 7.0% to 11.0% by mass, Nb and Ta: 1.5% to 2.5% by mass in total, C: 0.015% to 0.040% by mass, Mn: 0.5% to 4.0% by mass, N: 0.005% to 0.080% by mass, Si: 0.70% by mass or less (and more than 0%), Al: 0.50% by mass or less, Ti: 0.50% by mass or less, Mo: 0.50% by mass or less, Cu: 0.50% by mass or less, B: 0.0010% by mass or less, Zr: 0.0010% by mass or less, Co: 0.10% by mass or less, P: 0.015% by mass or less, and S: 0.015% by mass or less, the remainder being Ni and incidental impurities. | 11-21-2013 |
Patent application number | Description | Published |
20100002524 | FLOTOX-TYPE EEPROM - In designing a FLOTOX EEPROM of a dual cell type, a consideration should be given to the layout of cells for microminiaturization of the FLOTOX EEPROM. The FLOTOX EEPROM of the dual cell type includes two paired floating gates ( | 01-07-2010 |
20100084699 | FLOTOX-TYPE EEPROM AND METHOD FOR MANUFACTURING THE SAME - A FLOTOX-TYPE EEPROM of the invention has a configuration wherein an N region | 04-08-2010 |
20100133603 | EEPROM - An EEPROM according to the present invention includes: a semiconductor layer of a first conductive type; and a first insulating film formed on the semiconductor layer. A first impurity region, a second impurity region, a third impurity region, a fourth impurity region, and a fifth impurity region of a second conductive type are formed in top layer portions of the semiconductor layer. On the first insulating film, a select gate, a first floating gate, and a second floating gate are respectively disposed opposite a region between the first impurity region and the second impurity region, a region between the second impurity region and the third impurity region, and a region between the third impurity region and the fourth impurity region. In the first insulating film, a first tunnel window and a second tunnel window are respectively formed at portions in contact with the first floating gate and the second floating gate. A sixth impurity region of the second conductive type, which is connected to the second impurity region, is formed in a portion of the top layer portion of the semiconductor layer that opposes the second tunnel window. | 06-03-2010 |
20100149878 | FLOTOX TYPE EEPROM - A FLOTOX EEPROM of the invention includes: a plurality of floating gates | 06-17-2010 |
20120001251 | EEPROM - An EEPROM includes: a semiconductor layer of a first conductive type; and a first insulating film formed on the semiconductor layer. First through fifth impurity regions are formed in top layer portions of the semiconductor layer. On the first insulating film, a select gate, and first and second floating gates are respectively disposed opposite a region between the first impurity region and the second impurity region, a region between the second impurity region and the third impurity region, and a region between the third impurity region and the fourth impurity region. In the first insulating film, first and second tunnel windows are respectively formed at portions in contact with the first and second floating gates. A sixth impurity region of the second conductive type, which is connected to the second impurity region, is formed in the top layer portion of the semiconductor layer that opposes the second tunnel window. | 01-05-2012 |
20140048876 | SEMICONDUCTOR DEVICE INCLUDING A HIGH BREAKDOWN VOLTAGE DMOS AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes a high breakdown voltage DMOS transistor formed on a first conductivity type semiconductor substrate. The semiconductor device includes: a DMOS second conductivity type well; a DMOS first conductivity body region; a DMOS second conductivity type source region; a DMOS second conductivity type drain region; a LOCOS oxide film formed between the DMOS second conductivity type drain region and the DMOS first conductivity type body region; and a DMOS gate insulating film formed in succession to the LOCOS oxide film to cover a DMOS channel region between the DMOS second conductivity type source region and the DMOS second conductivity type well, wherein the DMOS gate insulating film includes a first insulating film which is disposed outside the DMOS channel region and a second insulating film which is disposed in the DMOS channel region and is thinner than the first insulating film. | 02-20-2014 |
Patent application number | Description | Published |
20140093791 | AIR ELECTRODE FOR METAL AIR BATTERY - The invention provides a metal air battery with a discharge capacity higher than a conventional one. This is achieved by an air electrode for a metal air battery provided with a layered body including a first layer containing a carbon material, a second layer containing a carbon material, and an intermediate layer containing a solid electrolyte and being positioned between the first layer and the second layer. | 04-03-2014 |
20140099531 | SULFIDE-BASED SOLID CELL MODULE - An object of the present invention is to provide a sulfide-based solid cell module which prevents a deterioration in negative electrode caused by hydrogen sulfide. | 04-10-2014 |
20140134466 | SOLID BATTERY - Provided is a solid battery which can inhibit degradation. The present invention is a solid battery including an electrode body having a pair of electrode layers and a solid electrolyte layer disposed between the pair of electrode layers and an exterior body which houses the electrode body, wherein a water absorbent is provided inside the exterior body, and a heat insulating material is disposed between the water absorbent and the electrode body. | 05-15-2014 |
20140212767 | SOLID BATTERY AND METHOD FOR MANUFACTURING THE SAME - Provided is a solid battery which can improve output power and a method for manufacturing the solid battery, the present invention is a solid battery including an electrode body having a cathode layer, an anode layer, and a solid electrolyte layer disposed between the cathode layer and the anode layer and containing a sulfide-based solid electrolyte, wherein the cathode layer and the anode layer are connected via a removable conductive member, and a method for manufacturing the solid battery including the steps of: producing the electrode body; and connecting the cathode layer and the anode layer via the removable conductive member. | 07-31-2014 |
20140212772 | ELECTROLYTE SOLUTION FOR LITHIUM-AIR BATTERY - Provided is an electrolyte solution capable of further increasing the output of a lithium air battery, the electrolyte solution for a lithium air battery having a total bonding strength between Li | 07-31-2014 |
20140370399 | METAL-AIR BATTERY - A metal-air battery with a high discharge capacity is provided. Discharge capacity can be increased by a metal-air battery that includes an air electrode, a negative electrode and an electrolyte layer, where the electrolyte layer includes a porous separator, and a liquid electrolyte infiltrated in the separator, and a contact angle between the liquid electrolyte and a negative electrode side-face of the separator is smaller than that between the liquid electrolyte and an air electrode side-face of the separator. | 12-18-2014 |
Patent application number | Description | Published |
20140213360 | TERMINAL DISPLAY CONTROL METHOD, TERMINAL DISPLAY SYSTEM AND SERVER APPARATUS - According to one embodiment, a terminal display control method for using as a controller of a game a terminal device including a touch panel, which is configured to be integral with a display, includes selecting a controller image which is used in the game; setting at least one of a presence/absence of a function, a number, a size, a shape and a position of disposition, with respect to an operation element in the controller image; and making variable, in accordance with a content of the setting, a state of the controller image displayed on the display, and an operation standard of the operation element corresponding to an input on the touch panel. | 07-31-2014 |
20140235337 | RANKING LIST DISPLAY METHOD IN GAME SYSTEM, AND SYSTEM FOR EXECUTING THE METHOD - A ranking list display method in a game system, which can easily execute ranking confirmation of a user, who is a ranking confirmation target, such as the user himself/herself, a friend or a rival, is provided. | 08-21-2014 |