Patent application number | Description | Published |
20120205707 | LIGHT-EMITTING DIODE PACKAGE - A light-emitting diode package includes: a frame unit, and at least one light-emitting diode chip including a chip body and a contact layer disposed between the chip body and the frame unit. One of the frame unit and the contact layer contains a magnetic material, and the other one of the frame unit and the contact layer contains a material capable of being magnetically attracted to the magnetic material. | 08-16-2012 |
20130056776 | PLATE - A plate including a substrate, a metal reflection layer and an oxidation protection layer is provided. The substrate has a first surface and a second surface opposite to the first surface. The metal reflection layer is disposed on the first surface of the substrate. The oxidation protection layer covers the metal reflection layer. The metal reflection layer is disposed between the oxidation protection layer and the first surface of the substrate. At least one light emitting diode chip is adapted to eutectic bonding on the plate. | 03-07-2013 |
20130134464 | LIGHT EMITTING DIODE DEVICE AND FLIP-CHIP PACKAGED LIGHT EMITTING DIODE DEVICE - The present invention relates to a light emitting diode (LED) and a flip-chip packaged LED device. The present invention provides an LED device. The LED device is flipped on and connected electrically with a packaging substrate and thus forming the flip-chip packaged LED device. The LED device mainly has an Ohmic-contact layer and a planarized buffer layer between a second-type doping layer and a reflection layer. The Ohmic-contact layer improves the Ohmic-contact characteristics between the second-type doping layer and the reflection layer without affecting the light emitting efficiency of the LED device and the flip-chip packaged LED device. The planarized buffer layer id disposed between the Ohmic-contact layer and the reflection layer for smoothening the Ohmic-contact layer and hence enabling the reflection layer to adhere to the planarized buffer layer smoothly. Thereby, the reflection layer can have the effect of mirror reflection and the scattering phenomenon on the reflected light can be reduced as well. | 05-30-2013 |
20130146912 | ELECTRONIC DEVICE - An electronic device including an insulating substrate, a plurality of conductive vias and a chip is provided. The insulating substrate has an upper surface and a lower surface opposite to each other. The conductive vias pass through the insulating substrate. The chip is disposed on the upper surface of the insulating substrate and includes a chip substrate, a semiconductor layer and a plurality of contacts. The semiconductor layer is located between the chip substrate and the contacts. The contacts are electrically connected to the conductive vias. The material of the insulating substrate and the material of the chip substrate are the same. | 06-13-2013 |
20130146913 | ELECTRONIC DEVICE - An electronic device including an insulating substrate, a chip and a patterned conductive layer is provided. The insulating substrate has an upper surface and a lower surface opposite to each other. The chip is disposed above the upper surface of the insulating substrate. The patterned conductive layer is disposed between the upper surface of the insulating substrate and the chip. The chip is electrically connected to an external circuit via the patterned conductive layer. Heat generated by the chip is transferred to external surroundings via the patterned conductive layer and the insulating substrate. | 06-13-2013 |
20130148344 | LIGHT EMITTING DEVICE - A light emitting device including an insulating substrate, a plurality of light emitting diode (LED) chips and a patterned conductive layer is provided. The insulating substrate has an upper surface. The LED chips are disposed on the insulating substrate and located on the upper surface. The dominant wavelengths of the LED chips are in a wavelength range of a specific color light and the dominant wavelengths of at least two of the LED chips are different. The patterned conductive layer is disposed between the insulating substrate and LED chips, and electrically connected to the LEDs chip. | 06-13-2013 |
20130240932 | SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor light-emitting device and a manufacturing method thereof are provided, wherein the semiconductor light-emitting device includes a substrate, a first type doped semiconductor layer, a light-emitting layer, a second type doped semiconductor layer and an optical micro-structure layer. The first type doped semiconductor layer is disposed on the substrate and includes a base portion and a mesa portion. The base portion has a top surface, and the mesa portion is disposed on the top surface of the base portion. The light-emitting layer is disposed on the first type doped semiconductor layer. The second type doped semiconductor layer is disposed on the light-emitting layer. The optical micro-structure layer is embedded in the first type doped semiconductor layer. | 09-19-2013 |
20130277641 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND FLIP CHIP PACKAGE DEVICE - A semiconductor light emitting device including a first type doped semiconductor layer, a light emitting layer, a second type doped semiconductor layer, and a reflection layer is provided. The first type doped semiconductor layer has a mesa portion and a depression portion. The light emitting layer is disposed on the mesa portion and has a first surface, a second surface and a first side surface connecting the first surface with the second surface. The second type doped semiconductor layer is disposed on the light emitting layer and has a third surface, a fourth surface and a second side surface connecting the third surface with the fourth surface. Observing from a viewing direction parallel to the light emitting layer, the reflection layer covers at least part of the first side surface and at least part of the second side surface. A flip chip package device is also provided. | 10-24-2013 |
20140084191 | DETECTION APPARATUS - A detection apparatus comprising a chuck, a probe device, a light-sensing device and a light-concentrating unit is disclosed. The chuck bears light-emitting diode chips. The probe device includes two probes and a power supply. The end point of the probes respectively electrically connects with one of the light-emitting diode chips and the power supply to make the light-emitting diode chip emits a plurality of light beams. The light-sensing device is disposed on one side of a light-emitting surface of the light-emitting diode chip so as to receive the light beams emitted by the light-emitting diode chip. The light-concentrating unit is disposed between the light-emitting diode chip and the light-sensing device to concentrate the light beams emitted by the light-emitting diode chip. | 03-27-2014 |
20140084931 | DETECTION APPARATUS FOR LIGHT-EMITTING DIODE CHIPS - A detection apparatus for light-emitting diode chips comprises a transparent chuck with the light-concentration capability, a probing device and a light-sensing device. The transparent chuck comprises a light-incident plane and a light-emitting plane. The light-incident plane is used to bear a plurality of light-emitting diode chips under detection. The probing device comprises two probe pins and a power supply. The two ends of each probe pin is electrically connected to one of the light-emitting diode chips and the power supply, respectively, to make the light-emitting diode chip emit a plurality of light beams. The light beams penetrate through the transparent chuck by emitting into the incident plane of the transparent chuck. The light-sensing device is disposed on one side of the light-emitting plane of the transparent chuck to receive the light beams which penetrate through the transparent chuck. | 03-27-2014 |
20140131751 | WAVELENGTH CONVERTING SUBSTANCE, WAVELENGTH CONVERTING GEL AND LIGHT EMITTING DEVICE - A wavelength converting substance is made of semiconductor material. The wavelength converting substance is suitable for absorbing an exciting light with the wavelength range falling between 300 nanometers and 490 nanometers and converting the exciting light to an emitted light with wavelength range falling between 450 nanometers and 750 nanometers. | 05-15-2014 |
20140159732 | DETECTION APPARATUS FOR LIGHT-EMITTING DIODE CHIP - A detection apparatus for light-emitting diode chip comprising a substrate with the function of photoelectric conversion and a probing device is disclosed. The substrate is designed to bear at least one light-emitting diode chip. The probing device comprises a power supply and at least two conductive elements. The two ends of the conductive elements are respectively electrically connected to the light-emitting diode chip and the power supply to enable the light-emitting diode chip to emit light beams. Some of the light beams are emitted from the light-emitting diode chip toward the substrate such that the light beams emitted by the light-emitting diode chip are converted into an electric signal by the substrate. | 06-12-2014 |
20140159733 | DETECTION APPARATUS FOR LIGHT-EMITTING DIODE CHIP - A detection apparatus for light-emitting diode chip comprising a light-collecting apparatus having an opening, a bracing component and a probing device is disclosed. The bracing component is designed to bear at least one light-emitting diode chip. The probing device comprises a power supply and at least two flexible current-transporting elements. The two ends of the current-transporting elements are respectively electrically connected to the light-emitting diode chip and the power supply to enable the light-emitting diode chip to emit light beams. Besides, the detection apparatus for light-emitting diode chip of the present invention further comprises a thimble to push the light-emitting diode chip into the inside of the light-collecting apparatus via the opening such that the light beams emitted by the light-emitting diode chip are collected by the light-collecting apparatus. | 06-12-2014 |
20140167077 | LIGHT SOURCE MODULE - A light source module includes a substrate, at least two light emitting diode (LED) chips and at least one dummy chip. The LED chips are disposed on the substrate. The dummy chip is disposed on the substrate and located between the LED chips. The LED chips, the dummy chip and the substrate are electrically connected to one another. The dummy chip is used to redirect a lateral light emitted from the LED chips. | 06-19-2014 |
20140268637 | WAVELENGTH CONVERTING STRUCTURE AND MANUFACTURING METHOD THEREOF - A wavelength converting structure suitable for covering a carrier carrying at least one light-emitting diode (LED) chip is provided. The wavelength converting structure includes a base film and a fluorescent layer. The base film has a first bending portion and a first flat portion connected to the first bending portion. The first flat portion is disposed on the carrier, and an accommodating space is defined by the first bending portion and the carrier. The LED chip is disposed in the accommodating space. The fluorescent layer is disposed on the base film and has a second bending portion and a second flat portion connected to the second bending portion. The second bending portion is conformal to the first bending portion, and the second flat portion is conformal to the first flat portion. | 09-18-2014 |
20140319562 | LIGHT-EMITTING DIODE PACKAGE STRUCTURE - An LED package structure of the invention includes a light-emitting device and a transparent molding compound. The light-emitting device has an upper surface. The transparent molding compound is disposed on the light-emitting device and covers the upper surface, in which the transparent molding compound has a top surface and a bottom surface opposite to each other and a first outside surface connecting the top surface and the bottom surface. A surface area of the first outside surface is greater than or equal to four times of a horizontal projection area of the upper surface. | 10-30-2014 |