| Patent application number | Description | Published |
|---|
| 20090278126 | METAL LINE SUBSTRATE, THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF FORMING THE SAME - A metal line substrate and a method of fabricating thereof, the metal line substrate including an insulating layer and a capping layer disposed on an insulating substrate, a trench defined by the insulating layer and the capping layer disposed on the insulating substrate, a seed layer pattern disposed on the insulating substrate, and a low-resistive conductive layer pattern disposed in the trench and contacting the seed layer pattern. The capping layer pattern includes a protrusion region which is in contact with the low-resistive conductive layer pattern. | 11-12-2009 |
| 20100136775 | METHOD OF MANUFACTURING THIN-FILM TRANSISTOR SUBSTRATE - Provided is a method for manufacturing a thin-film transistor substrate, in which the etching characteristics of an insulating film and a passivation layer are enhanced. The insulating film and the passivation layer are deposited by low temperature chemical vapor deposition. The method includes disposing a gate wiring on an insulating substrate; disposing a gate insulating film on the gate wiring; disposing a data wiring on the gate insulating film; disposing a passivation layer on the data wiring; and forming a contact hole by etching at least one of the gate insulating film and the passivation layer, wherein at least one of the gate insulating film and the passivation layer is disposed at a temperature of about 280° C. or below, and the forming of the contact hole is performed at a pressure of about 60 mT or below. | 06-03-2010 |
| 20100148769 | NON-CONTACT PLASMA-MONITORING APPARATUS AND METHOD AND PLASMA PROCESSING APPARATUS - A non-contact plasma-monitoring apparatus and a non-contact plasma-monitoring method are provided. The non-contact plasma-monitoring apparatus is installed in a plasma processing apparatus including a processing chamber and a power supply unit and measures at least one of an electric field and a magnetic field, which are created around power supply wiring connecting the process chamber to the power supply unit, without physically contacting the power supply wiring. | 06-17-2010 |
| 20100163862 | THIN FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD OF FABRICATING THE SAME - A method of fabricating a thin film transistor array substrate is presented. The method entails forming a gate interconnection line on an insulating substrate, forming a gate insulating layer on the gate interconnection line, forming a semiconductor layer and a data interconnection line on the semiconductor layer, sequentially forming multiple passivation layers, etching the passivation layers down to a drain electrode that is an extension of the data interconnection line. The portion of the drain electrode that is exposed at this stage is a part of the drain electrode-pixel electrode contact portion. A pixel electrode is formed connected to the drain electrode. Two of the passivation layers have the same composition but are processed at different temperatures. A thin film transistor prepared in the above manner is also presented. | 07-01-2010 |
| 20100230679 | CONTACT PORTION OF WIRE AND MANUFACTURING METHOD THEREOF - A contact portion of wiring and a method of manufacturing the same are disclosed. A contact portion of wiring according to an embodiment includes: a substrate; a conductive layer disposed on the substrate; an interlayer insulating layer disposed on the conductive layer and having a contact hole; a metal layer disposed on the conductive layer and filling the contact hole; and a transparent electrode disposed on the interlayer insulating layer and connected to the metal layer, wherein the interlayer insulating layer includes a lower insulating layer and an upper insulating layer disposed on the lower insulating layer, the lower insulating layer is undercut at the contact hole, and the metal layer fills in the portion where the lower insulating layer is undercut. | 09-16-2010 |
| 20110216276 | LIQUID CRYSTAL DISPLAY - A liquid crystal display according to an exemplary embodiment of the present invention includes: a first substrate; a first signal line disposed on the first substrate, a thin film transistor connected with the first signal line, a first color filter and a second color filter disposed on the first substrate; a colored member disposed on the first color filter and the second color filter; and a pixel electrode disposed on the first color filter and the second color filter and the colored member, wherein the first color filter and the second color filter are partially overlapped with each other and the height of the colored member disposed at the overlap between the first color filter and the second color filter is greater than the height of the colored member disposed not at the overlap. | 09-08-2011 |
| 20110234536 | TOUCH SCREEN SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - In a touch screen substrate and a method of manufacturing the same, the touch screen substrate includes a base substrate, a light blocking pattern, a first sensing element and a first switching element. The light blocking pattern includes an inorganic layer formed on the base substrate and a light blocking layer formed on the inorganic layer, the light blocking layer transmitting an infrared light and absorbing a visible light. The first sensing element is formed on the light blocking pattern and senses the infrared light. The first switching element is electrically connected to the first sensing element. Thus, an undercut may be prevented from being formed at a lower portion of the light blocking pattern, and an adhesive strength between the light blocking pattern and the base substrate may be enhanced. | 09-29-2011 |
| 20110297931 | METHOD OF FABRICATING A THIN FILM TRANSISTOR ARRAY SUBSTRATE - A method of fabricating a thin film transistor array substrate is presented. The method entails forming a gate interconnection line on an insulating substrate, forming a gate insulating layer on the gate interconnection line, forming a semiconductor layer and a data interconnection line on the semiconductor layer, sequentially forming multiple passivation layers, etching the passivation layers down to a drain electrode that is an extension of the data interconnection line. The portion of the drain electrode that is exposed at this stage is a part of the drain electrode-pixel electrode contact portion. A pixel electrode is formed connected to the drain electrode. Two of the passivation layers have the same composition but are processed at different temperatures. A thin film transistor prepared in the above manner is also presented. | 12-08-2011 |
| 20120037912 | VISIBLE SENSING TRANSISTOR, DISPLAY PANEL AND MANUFACTURING METHOD THEREOF - A display device includes an infrared sensing transistor and a visible sensing transistor. The visible sensing transistor includes a semiconductor on a substrate; an ohmic contact on the semiconductor; an etch stopping layer on the ohmic contact; a source electrode and a drain electrode on the etch stopping layer; a passivation layer on the source electrode and the drain electrode; and a gate electrode on the passivation layer. The etch stopping layer may be composed of the same material as the source electrode and the drain electrode. The infrared sensing transistor is similar to the visible sensing transistor except the etch stopping layer is absent. | 02-16-2012 |
| 20120188204 | TOUCH SENSING SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A touch sensing substrate includes a substrate, a first light sensing element, a second light sensing element and a first bias line. The first light sensing element includes a first gate electrode, a first active pattern overlapping with the first gate electrode, a first source electrode partially overlapping with the first active pattern and a first drain electrode partially overlapping with the first active pattern. The second light sensing element includes a second gate electrode, a second active pattern overlapping with the second gate electrode, a second source electrode partially overlapping with the second active pattern and a second drain electrode partially overlapping with the second active pattern. The first bias line is connected to the first and second gate electrodes. | 07-26-2012 |
| 20120228505 | OPTICAL SENSOR - An optical sensor includes a visible light sensor includes a visible light sensing transistor and an infrared light sensor includes an infrared light sensing transistor, wherein the visible light sensing transistor receives a first driving voltage through a first driving voltage line, the infrared light sensing transistor receives a second driving voltage through a second driving voltage line, and the visible light sensing transistor and the infrared light sensing transistor receive a reference voltage through a reference voltage line. | 09-13-2012 |
| 20120248452 | OPTICAL SENSOR - An optical sensor preventing damage to a semiconductor layer, and preventing a disconnection and a short circuit of a source electrode and a drain electrode, and a manufacturing method of the optical sensor is provided. The optical sensor includes: a substrate; an infrared ray sensing thin film transistor including a first semiconductor layer disposed on the substrate; a visible ray sensing thin film transistor including a second semiconductor layer disposed on the substrate; a switching thin film transistor including a third semiconductor layer disposed on the substrate; and a semiconductor passivation layer enclosing an upper surface and a side surface of an end portion of at least one of the first semiconductor layer, the second semiconductor layer, and the third semiconductor layer. | 10-04-2012 |
| 20130146900 | DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A display substrate includes a base substrate, a switching element, a protecting layer, an organic layer, a first pixel electrode and a second pixel electrode. The switching element is on the base substrate, and includes a gate electrode, a source electrode and a drain electrode. The protecting layer is on the switching element, and includes a first hole exposing the drain electrode. The organic layer is on the protecting layer, and includes a second hole which exposes a side surface of the protecting layer which defines the first hole and exposes a top surface of the protecting layer which is adjacent to the side surface of the protecting layer. The first pixel electrode is on the organic layer. The second pixel electrode overlaps the first pixel electrode, and is electrically connected to the drain electrode via the first and second holes. | 06-13-2013 |
| 20130320328 | THIN FILM TRANSISTOR, THIN FILM TRANSISTOR ARRAY PANEL INCLUDING THE SAME, AND MANUFACTURING METHOD THEREOF - The present invention relates to a thin film transistor, a thin film transistor array panel, and a manufacturing method thereof. A thin film transistor according to an exemplary embodiments of the present invention includes: a gate electrode; a gate insulating layer positioned on or under the gate electrode; a channel region overlapping the gate electrode, the gate insulating layer interposed between the channel region and the gate electrode; and a source region and a drain region, facing each other with respect to the channel region, positioned in the same layer as the channel region, and connected to the channel region, wherein the channel region, the source region, and the drain region comprise an oxide semiconductor, and wherein a carrier concentration of the source region and the drain region is larger than a carrier concentration of the channel region. | 12-05-2013 |
| 20140175441 | THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF - A thin film transistor array panel includes a substrate, an insulation layer, a first semiconductor, and a second semiconductor. The insulation layer is disposed on the substrate and includes a stepped portion. The first semiconductor is disposed on the insulation layer. The second semiconductor is disposed on the insulation layer and includes a semiconductor material different than the first semiconductor. The stepped portion is spaced apart from an edge of the first semiconductor. | 06-26-2014 |
| 20140218644 | VISIBLE SENSING TRANSISTOR, DISPLAY PANEL AND MANUFACTURING METHOD THEREOF - A display device includes an infrared sensing transistor and a visible sensing transistor. The visible sensing transistor includes a semiconductor on a substrate; an ohmic contact on the semiconductor; an etch stopping layer on the ohmic contact; a source electrode and a drain electrode on the etch stopping layer; a passivation layer on the source electrode and the drain electrode; and a gate electrode on the passivation layer. The etch stopping layer may be composed of the same material as the source electrode and the drain electrode. The infrared sensing transistor is similar to the visible sensing transistor except the etch stopping layer is absent. | 08-07-2014 |
