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| 20120320329 | DISPLAY PANEL - A display panel that includes a flexible substrate is provided. The flexible substrate includes a first corner, and a plurality of display elements disposed on the first substrate. The flexible substrate also includes a first primary edge and a second primary edge which extend in different directions to meet at the first corner, and the first corner includes a first edge having a polygonal shape with n (n is a natural number of 2 or more) vertexes. | 12-20-2012 |
| 20130027642 | OPTICAL FILM, METHOD OF MANUFACTURING THE SAME, AND DISPLAY APPARATUS HAVING THE SAME - An optical film includes a base film, thin film patterns, and cholesteric liquid crystals. The thin film patterns are disposed on the base film to be spaced apart from each other and have a first property corresponding to one of a hydrophilic property and a hydrophobic property. The cholesteric liquid crystals have the first property and are disposed on the thin film patterns to transmit one of a right-circularly polarized light and a left-circularly polarized light and reflect the other one of the right-circularly polarized light and the left-circularly polarized light. A display apparatus includes a light source unit emitting a light, a display panel receiving the light and controlling a transmittance of the light to display an image, and an optical film disposed between the light source unit and the display panel. | 01-31-2013 |
| 20130182203 | DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - A display apparatus includes a base substrate, a pixel electrode, a plurality of capsular structures, a common electrode and a plurality of color filters. The base substrate includes a plurality of unit pixel regions. Each of the unit pixel regions has a plurality of sub pixel regions. A pixel electrode is formed in each of the sub pixel regions. A plurality of capsular structures is disposed on the base substrate. Each of the capsular structures is formed in each of the unit pixel regions and having a cavity. A common electrode is formed on the capsular structures. A plurality of color filters is formed on the capsular structures. Each of the color filters is formed in each of the sub pixel regions. An opening ratio of the sub pixel regions and light transmittance are relatively high. | 07-18-2013 |
| 20130293798 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - A display device includes a substrate including a pixel area, a thin-film transistor formed on the substrate, a pixel electrode connected to the thin-film transistor, a common electrode formed on the pixel electrode, a space formed between the pixel electrode and the common electrode, and a roof layer formed on the common electrode. The common electrode and the roof layer include a protrusion protruding from at least one of an upper edge and a lower edge of the pixel area. | 11-07-2013 |
| 20140146278 | NANO CRYSTAL DISPLAY DEVICE HAVING IMPROVED MICROCAVITY STRUCTURE - A display panel with microcavities each having ends of asymmetric cross-sectional area. An exemplary display panel has a substrate; an electrode disposed on the substrate; and a supporting member disposed on the electrode. The supporting member is shaped to form a cavity between the supporting member and the electrode. The cavity has a first opening at one end of the supporting member and a second opening at an opposite end of the supporting member, the first opening being positioned over the electrode. A cross-sectional area of the first opening is smaller than a cross-sectional area of the second opening. | 05-29-2014 |
| 20140198286 | NANO CRYSTAL DISPLAY DEVICE HAVING PATTERNED MICROCAVITY STRUCTURE - A display panel with microcavities each having ends of asymmetric cross-sectional area. An exemplary display panel has a substrate; a pixel electrode formed on the substrate; a first black matrix and a second black matrix each disposed on the substrate; and a supporting member disposed on the substrate over the pixel electrode and the black matrix, the supporting member shaped so as to form a microcavity between the pixel electrode and the supporting member, the microcavity having an upper surface proximate to the supporting member and a lower surface opposite the upper surface. The microcavity has one end positioned over the first black matrix, and another end opposite the first end and positioned over the second black matrix; the lower surface of the microcavity has first and second channels disposed therein, the first channel positioned over the first black matrix, and the second channel positioned over the second black matrix. | 07-17-2014 |
| 20150042928 | DISPLAY DEVICE - The present invention relates to a display device with improved transparency and appearance, and the display device according to an example embodiment of the present invention includes: a substrate including a plurality of pixel areas having a transparent region and a liquid crystal driving region; a thin film transistor formed on the substrate; a pixel electrode connected to the thin film transistor; a common electrode formed in the liquid crystal driving region on the pixel electrode so as to be spaced apart from the pixel electrode with a microcavity therebetween; a roof layer formed on the common electrode; an injection hole formed in the common electrode and the roof layer so as to expose the microcavity; a liquid crystal layer filling the microcavity; and an overcoat formed on the roof layer so as to cover the liquid crystal injection hole to seal the microcavity, wherein the pixel electrode, the common electrode, the roof layer, and the liquid crystal layer are formed in the liquid crystal driving region. | 02-12-2015 |
| 20150109566 | LIQUID CRYSTAL DISPLAY AND MANUFACTURING METHOD THEREOF - A liquid crystal display is provided. The liquid crystal display includes a substrate including a reflective area and a transmissive area, a thin film transistor disposed on the substrate, a pixel electrode disposed on the thin film transistor, and a roof layer disposed facing the pixel electrode. The liquid crystal display further includes a plurality of microcavities formed between the pixel electrode and the roof layer, and a liquid crystal material disposed in the plurality of microcavities. The reflective area includes a first cell gap, and the transmissive area includes a second cell gap that is different from the first cell gap. | 04-23-2015 |
| 20150212351 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - Provided are a display device and a manufacturing method thereof capable of improving a viewing angle. The display device includes: a substrate; a switching element; a pixel electrode; a common electrode; a roof layer; a liquid crystal layer; and an encapsulation layer. The switching element is on the substrate. The pixel electrode is connected with the switching element. The common electrode is spaced apart from the pixel electrode on the pixel electrode with a plurality of microcavities comprising a microcavity therebetween. The roof layer is on the common electrode. The liquid crystal layer fills the microcavity. The encapsulation layer is on the roof layer to seal the microcavity, in which the common electrode includes a protrusion protruding upwards from a portion contacting an upper surface of the microcavity. | 07-30-2015 |
| 20150268497 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - A display device includes a substrate including a pixel area, a thin-film transistor formed on the substrate, a pixel electrode connected to the thin-film transistor, a common electrode formed on the pixel electrode, a space formed between the pixel electrode and the common electrode, and a roof layer formed on the common electrode. The common electrode and the roof layer include a protrusion protruding from at least one of an upper edge and a lower edge of the pixel area. | 09-24-2015 |
| 20160091766 | LIQUID CRYSTAL DISPLAY AND METHOD OF MANUFACTURING THE SAME - A liquid crystal display and a method of making it are provided. The liquid crystal display includes: a substrate; a thin film transistor disposed on the substrate; a pixel electrode connected to the thin film transistor; a roof layer disposed to be spaced from the pixel electrode; a liquid crystal layer between the pixel electrode and the roof layer; and a plurality of columns arranged along a gate line connected to the thin film transistor and supporting the roof layer, wherein the plurality of columns are formed of the same material as the roof layer. | 03-31-2016 |
| 20160103377 | LIQUID CRYSTAL DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - A liquid crystal display according to the present inventive concept includes: a substrate; a gate line and a data line crossing each other formed on the substrate; a thin film transistor connected to the gate line and the data line; a pixel electrode connected to the thin film transistor and having a slit at a center; a liquid crystal layer filling a plurality of microcavities positioned on the pixel electrode; a common electrode positioned on the liquid crystal layer; and a roof layer formed on the common electrode and having an oblique portion formed to be inclined at both outer sides of the microcavities. | 04-14-2016 |
| 20160111444 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - An exemplary embodiment of the present inventive concept provides a display device including: an insulation substrate; a thin film transistor disposed on the substrate; a common electrode and a pixel electrode disposed on the thin film transistor to overlap each other with an insulating layer therebetween; a roof layer formed to be spaced apart from the pixel electrode with a microcavity therebetween; and a liquid crystal layer filling the microcavity. A lower portion of the roof layer includes a valley where a thickness of the roof layer is increased and a peak where the thickness of the roof layer is reduced. | 04-21-2016 |
| 20160124275 | LIQUID CRYSTAL DISPLAY HAVING IMPROVED TRANSMITTANCE - An exemplary embodiment of the present invention provides a liquid crystal display including: a first pixel, a second pixel, and a third pixel each configured to display a different color; and pixel electrodes disposed in each of the first pixel, the second pixel, and the third pixel, wherein each pixel electrode includes a plurality of branch electrodes, a width of a third branch electrode disposed in the third pixel is smaller than that of a second branch electrode disposed in the second pixel, and the third pixel is configured to display blue. | 05-05-2016 |
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| 20140062383 | BALANCING APPARATUS, BALANCING METHOD, AND BATTERY MODULE - According to an example embodiment, a balancing apparatus includes: bi-directional switches that are respectively connected to cells that are connected in series, a controller configured to measure voltages of the cells, and a multiwinding transformed connected to the bi-directional switches. The bi-directional switches are configured to control a flow of an electric current bi-directionally. The controller is configured to select a number of the cells for balancing based on the measured voltages of the cells. The controller is configured to turn on and turn off the bi-directional switches that are connected to selected cells based on the measured voltages. The multi-winding transformer is configured to transfer energy between the cells when the bi-directional switches connected to the selected cells are turned on. | 03-06-2014 |
| 20140084868 | BALANCING METHOD AND BATTERY SYSTEM - According to an example embodiment, a battery system includes: a plurality of modules, each including a plurality of cells connected to each other in series and a cell balancing circuit performing a balancing operation between the plurality of the cells based on voltages of the plurality of the cells; and a module balancing circuit performing a balancing operation between the modules based on voltages of the modules. | 03-27-2014 |
| 20140111166 | CIRCUITS FOR CHARGING BATTERIES AND BOOSTING VOLTAGES OF BATTERIES, AND METHODS OF CHARGING BATTERIES - A circuit may comprise a direct current (DC)/DC boost converter connected to a battery that includes a plurality of cells; a DC link connected between the DC/DC boost converter and an inverter; and/or a charging circuit connected between the battery and the DC link. The charging circuit may be connected to the DC/DC boost converter in parallel. A method of charging a battery using a regenerative energy of a motor may include storing the regenerative energy of the motor by using a converter with a multi-winding transformer, selecting a cell to be charged from among a plurality of cells included in the battery, and transferring the stored regenerative energy to the selected cell by using the converter. | 04-24-2014 |
| 20140239878 | BALANCING APPARATUSES FOR BALANCING CELLS INCLUDED IN BATTERIES AND BATTERY MODULES - An apparatus for performing balancing on cells connected in series and included in a module may comprise a first switching unit including first cell selection switches respectively connected to the cells, and configured to connect a first cell to be balanced to a balancing unit; a second switching unit including second cell selection switches respectively connected to the cells, and configured to connect a second cell to be balanced to the balancing unit; a controller configured to measure voltages of each cell, and controlling operations of the first switching unit, the second switching unit, and the balancing unit based on information on the first and second cells, wherein the first and second cells are selected by the controller using the measured voltages; and/or the balancing unit, connected to the first and second switching units, and configured to perform balancing between the first and second cells selected by the controller. | 08-28-2014 |
| 20150200661 | DRIVING METHOD AND DRIVING CIRCUIT FOR POWER SWITCHING DEVICE - According to example embodiments, a method of driving a power switch device includes applying a first voltage to a gate electrode of the power switch device, and applying a drive voltage to the gate electrode of the power switch device after applying the first voltage to the gate electrode of the power switch device. The first voltage is higher than the drive voltage of the power switch device in a turn-on state. | 07-16-2015 |
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| 20120280299 | Three-Dimensional Semiconductor Memory Devices and Method of Fabricating the Same - Provided are three-dimensional semiconductor memory devices and methods of fabricating the same. The device may include an electrode structure extending in a first direction and including electrodes and insulating patterns which are alternately and repeatedly stacked on a substrate, and vertical active patterns penetrating the electrode structure. At least an uppermost electrode of the electrodes is divided into a plurality of physically isolated segments arranged in the first direction. The segments of the uppermost electrode are electrically connected to each other. | 11-08-2012 |
| 20130032875 | SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME - One example embodiment of a semiconductor device includes a memory cell array formed on a substrate. The memory cell array includes a gate stack including alternating conductive and insulating layers. A first lower conductive layer in the gate stack has a portion disposed below a first upper conductive layer in the gate stack, and a first contact area of the first lower conductive layer is disposed higher than a second contact area of the first upper conductive layer. The semiconductor device further includes first and second contact plugs extending into the gate stack to contact the first and second contact areas, respectively. | 02-07-2013 |
| 20130092994 | THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device is provided including first and second cell strings formed on a substrate, the first and second cell strings jointly connected to a bit line, wherein each of the first and second cell strings includes a ground selection unit, a memory cell, and first and second string selection units sequentially formed on the substrate to be connected to each other, wherein the ground selection unit is connected to a ground selection line, the memory cell is connected to a word line, the first string selection unit is connected to a first string selection line, and the second string selection unit is connected to a second string selection line, and wherein the second string selection unit of the first cell string has a channel dopant region. | 04-18-2013 |
| 20130270624 | GATE STRUCTURE IN NON-VOLATILE MEMORY DEVICE - A gate structure of a non-volatile memory device and a method of forming the same including a tunnel oxide layer pattern, a charge trap layer pattern, a blocking dielectric layer pattern having the uppermost layer including a material having a first dielectric constant greater than that of a material included in the tunnel oxide layer pattern, and first and second conductive layer patterns. The gate structure includes a first spacer to cover at least the sidewall of the second conductive layer pattern. The gate structure includes a second spacer covering the sidewall of the first spacer and the sidewall of the first conductive layer pattern and including a material having a second dielectric constant equal to or greater than the first dielectric constant. In the non-volatile memory device including the gate structure, erase saturation caused by back tunneling is reduced. | 10-17-2013 |
| 20140159137 | GATE STRUCTURE IN NON-VOLATILE MEMORY DEVICE - A gate structure of a non-volatile memory device and a method of forming the same including a tunnel oxide layer pattern, a charge trap layer pattern, a blocking dielectric layer pattern having the uppermost layer including a material having a first dielectric constant greater than that of a material included in the tunnel oxide layer pattern, and first and second conductive layer patterns. The gate structure includes a first spacer to cover at least the sidewall of the second conductive layer pattern. The gate structure includes a second spacer covering the sidewall of the first spacer and the sidewall of the first conductive layer pattern and including a material having a second dielectric constant equal to or greater than the first dielectric constant. In the non-volatile memory device including the gate structure, erase saturation caused by back tunneling is reduced. | 06-12-2014 |
| 20140197542 | SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING SEMICONDUCTOR DEVICES - Semiconductor devices are provided. A semiconductor device may include a substrate and a plurality of lines on the substrate. The semiconductor device may include a dielectric layer on the substrate and adjacent the plurality of lines. The semiconductor device may include a connection element in the dielectric layer. In some embodiments, the semiconductor device may include a plurality of contacts on the connection element, and a conductive interconnection on one of the plurality of contacts that are on the connection element and on a contact that is spaced apart from the connection element. | 07-17-2014 |
| 20140203442 | WIRING STRUCTURES FOR THREE-DIMENSIONAL SEMICONDUCTOR DEVICES - Wiring structures of three-dimensional semiconductor devices and methods of forming the same are provided. The wiring structures may include an upper wordline and a lower wordline, each of which extends in a longitudinal direction. The upper wordline may include a recessed portion that extends for only a portion of the upper wordline in a transverse direction and the lower wordline may include a wiring area exposed by the recessed portion of the upper wordline. The wiring structures may also include an upper contact plug contacting the upper wordline and a lower contact plug contacting the wiring area. The upper and lower contact plugs may extend in a vertical direction. | 07-24-2014 |
| 20150084204 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - Provided are a semiconductor device and a method of fabricating the same. The device may include a substrate including a cell array region and a peripheral circuit region, stacks on the cell array region of the substrate, the stacks having a first height and extending along a direction, a common source structure disposed between adjacent ones of the stacks, a peripheral logic structure disposed on the peripheral circuit region of the substrate and having a second height smaller than the first height, a plurality of upper interconnection lines disposed on the peripheral logic structure and extending parallel to each other, and a interconnection structure disposed between the peripheral logic structure and the upper interconnection lines, when viewed in vertical section, and electrically connected to at least two of the upper interconnection lines. | 03-26-2015 |
| 20150340366 | SEMICONDUCTOR DEVICES INCLUDING A PERIPHERAL CIRCUIT REGION AND FIRST AND SECOND MEMORY REGIONS, AND RELATED PROGRAMMING METHODS - Semiconductor devices are provided. A semiconductor device includes a peripheral circuit region and a first memory region that are side by side on a substrate. Moreover, the semiconductor device includes a second memory region that is on the peripheral circuit region and the first memory region. Related methods of programming semiconductor devices are also provided. | 11-26-2015 |
| 20150357339 | THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device is provided including first and second cell strings formed on a substrate, the first and second cell strings jointly connected to a bit line, wherein each of the first and second cell strings includes a ground selection unit, a memory cell, and first and second string selection units sequentially formed on the substrate to be connected to each other, wherein the ground selection unit is connected to a ground selection line, the memory cell is connected to a word line, the first string selection unit is connected to a first string selection line, and the second string selection unit is connected to a second string selection line, and wherein the second string selection unit of the first cell string has a channel dopant region. | 12-10-2015 |
| 20160111165 | METHODS OF OPERATING A NONVOLATILE MEMORY DEVICE - An operating method of a nonvolatile memory device is provided which sequentially performs a plurality of erase loops to erase at least one of a plurality of memory blocks. The operating method comprises performing at least one of the plurality of erase loops; performing a post-program operation on the at least one memory block after the at least one erase loop is executed; and performing remaining erase loops of the plurality of erase loops. The post-program operation is not performed when each of the remaining erase loops is executed. | 04-21-2016 |
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| 20130119438 | PIXEL FOR DEPTH SENSOR AND IMAGE SENSOR INCLUDING THE PIXEL - A unit pixel of a depth sensor including a light-intensity output circuit configured to output a pixel signal according to a control signal, the pixel signal corresponding to a first electric charge and a second electric charge, a first light-intensity extraction circuit configured to generate the first electric charge and transmit the first electric charge to the light-intensity output circuit, the first electric charge varying according to an amount of light reflected from a target object and a second light-intensity extraction circuit configured to generate the second electric charge and transmit the second electric charge to the light-intensity output circuit, the second electric charge varying according to the amount of reflected light. The light-intensity output circuit includes a first floating diffusion node. Accordingly, it is possible to minimize waste of a space, thereby manufacturing a small-sized pixel. | 05-16-2013 |
| 20140015932 | 3DIMENSION IMAGE SENSOR AND SYSTEM INCLUDING THE SAME - A 3D image sensor includes a first color filter configured to pass wavelengths of a first region of visible light and wavelengths of infrared light; a second color filter configured to pass wavelengths of a second region of visible light and the wavelengths of infrared light; and an infrared sensor configured to detect the wavelengths of infrared light passed through the first color filter. | 01-16-2014 |
| 20150115291 | Image Sensors Having Transfer Gate Electrodes in Trench - Provided is an image sensor including a semiconductor substrate having a trench and having a first conductivity type, a photoelectric conversion layer formed in the semiconductor substrate below the trench to have a second conductivity type, first and second transfer gate electrodes provided in the trench covered with a gate insulating layer, a first charge-detection layer formed in the semiconductor substrate adjacent to the first transfer gate electrode, and a second charge-detection layer formed in the semiconductor substrate adjacent to the second transfer gate electrode. | 04-30-2015 |
| 20150116565 | IMAGE SENSOR AND DEVICES HAVING THE SAME - An image sensor according to an example embodiment of includes a first pixel and a second pixel in a first row. The first pixel includes a first photoelectric conversion element at a first depth in a semiconductor substrate and the first photoelectric conversion element is configured to convert a first visible light spectrum into a first photo charge, and the second pixel includes a second photoelectric conversion element at a second depth from the first depth in the semiconductor substrate, the second photoelectric conversion element is at least partially overlapped by the first photoelectric conversion element in a vertical direction, and the second photoelectric conversion element is configured to convert a second visible light spectrum into a second photo charge. | 04-30-2015 |
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| 20150286059 | IMAGE SENSOR HAVING IMPROVED LIGHT UTILIZATION EFFICIENCY - At least one example embodiment discloses an image sensor with an improved light utilization efficiency based on reflective color filters. Since the image sensors may use most of an incident light for forming an image by using reflective color filters, light loss due to light absorption may be reduced. Therefore, light utilization efficiency of the image sensors may be improved while embodying color purity. | 10-08-2015 |
| 20150318318 | IMAGE SENSOR HAVING IMPROVED LIGHT UTILIZATION EFFICIENCY - An image sensor includes a first pixel row including a plurality of first pixels configured to sense first wavelength light, the first wavelength light having a first wavelength, a second pixel row adjacent to the first pixel row, the second pixel row including a plurality of second pixels configured to sense second wavelength light and a plurality of third pixels configured to sense third wavelength light, the plurality of second pixels and the plurality of third pixels being alternately arranged, the second wavelength light having a second wavelength and the third wavelength light having a third wavelength and a plurality of first color separation elements in the plurality of second pixels, respectively, the plurality of separation elements configured to change a spectrum distribution of incident light. | 11-05-2015 |
| 20150323800 | COLOR SEPARATION DEVICES AND IMAGE SENSORS INCLUDING THE SAME - Color separation devices, and image sensors including the color separation devices and color filters, include at least two transparent bars that face each other with a gap therebetween. Mutually-facing surfaces of the at least two transparent bars are separated from each other by the gap such that the at least two transparent bars allow diffraction of visible light passing therebetween. The at least two transparent bars have a refractive index greater than a refractive index of a surrounding medium. | 11-12-2015 |
| 20150364521 | STACKED TYPE IMAGE SENSOR INCLUDING COLOR SEPARATION ELEMENT AND IMAGE PICKUP APPARATUS INCLUDING THE STACKED TYPE IMAGE SENSOR - A stacked type image sensor with improved optical characteristics, which may result from a color separation element, and an image pickup apparatus including this image sensor. The stacked type image sensor includes first and second light sensing layers arranged in a stacked manner, and color separation elements positioned between the first and second light sensing layers. Accordingly, the first light sensing layer absorbs and detects light of a first wavelength band, and the second light sensing layer detects light of second and third wavelength bands separated by the color separation elements. | 12-17-2015 |
| 20150365640 | COLOR SEPARATION ELEMENT ARRAY, IMAGE SENSOR INCLUDING THE COLOR SEPARATION ELEMENT ARRAY, AND IMAGE PICKUP APPARATUS INCLUDING THE COLOR SEPARATION ELEMENT ARRAY - A color separation element array includes a plurality of color separation elements arranged in two dimensions and separating an incident light according to a wavelength such that, of the incident light, a light of a first wavelength is directed to a first direction and a light of a second wavelength that is different from the first wavelength is directed to a second direction that is different from the first direction, in which each of the plurality of color separation elements includes a first element and a second element that are sequentially arranged according to a traveling direction of the incident light, and the first element and the second element of at least one of the plurality of color separation elements are shifted with respect to each other. | 12-17-2015 |
| 20160006995 | IMAGE SENSOR INCLUDING COLOR SEPARATION ELEMENT AND IMAGE PICKUP APPARATUS INCLUDING THE IMAGE SENSOR - An image sensor includes a pixel array having a Bayer pattern structure including a first pixel row in which first pixels and second pixels are alternately provided and a second pixel row in which additional ones of the second pixels and third pixels are alternately provided, a first element to control light of a first wavelength band to travel in directions toward left and right sides of the first element and to control light of a second wavelength band of the incident light to travel in a direction directly under the first element, and a second element to control light of a third wavelength band to travel in the directions toward the left and right sides of the second element and to control the light of the second wavelength band to travel in a direction directly under the second element. | 01-07-2016 |
| 20160047690 | IMAGE SENSOR INCLUDING COLOR FILTER ISOLATION LAYER AND METHOD OF MANUFACTURING THE SAME - An image sensor including a color filter isolation layer and a method of manufacturing the image sensor. The image sensor includes a plurality of color filters that transmit light of a predetermined wavelength band to a light sensing layer. The image sensor also includes an isolation layer disposed between adjacent ones of the plurality of color filters. The isolation layer is formed of a material having a lower refractive index than a refractive index of the color filters, thus totally internally reflecting light incident on the isolation layer from one of the plurality of color filters. | 02-18-2016 |
| 20160054172 | IMAGE SENSOR FOR PRODUCING VIVID COLORS AND METHOD OF MANUFACTURING THE SAME - An image sensor and a method of manufacturing the same are provided. The image sensor includes a photoelectric conversion layer; a color filter disposed on the photoelectric conversion layer; a low refractive index layer disposed on the color filter; a beam splitter disposed within the low refractive index layer; and a lens layer disposed on the low refractive index layer and covering the beam splitter. The beam splitter extends in a diagonal direction of a pixel area of the color filter, in a plan view. | 02-25-2016 |
| 20160069747 | THERMAL RADIATION SENSOR AND THERMAL IMAGE CAPTURING DEVICE INCLUDING SAME - A thermal radiation sensor may include a thermal absorption layer, an optical resonator surrounding the thermal absorption layer, and a plasmonic absorber provided on the thermal absorption layer, and thus, the thermal radiation sensor may have high sensitivity and may be miniaturized. | 03-10-2016 |
| 20160118430 | STACKED TYPE IMAGE SENSOR INCLUDING COLOR SEPARATION ELEMENT AND IMAGE PICKUP APPARATUS INCLUDING STACKED TYPE IMAGE SENSOR - A stacked type image sensor including color separation elements, and an image pickup apparatus including the stacked type image sensor, are provided. The stacked type image sensor includes a first light sensing layer including first pixels configured to absorb and detect light of a first wavelength band and transmit light of a second wavelength band and a third wavelength band, and a second light sensing layer disposed to face the first light sensing layer, the second light sensing layer including second pixels configured to detect light of the second wavelength band and third pixels configured to detect light of the third wavelength band. The color separation elements are disposed between the first light sensing layer and the second light sensing layer, and are configured to direct the light of the second wavelength band toward the second pixels, and direct the light of the third wavelength band toward the third pixels. | 04-28-2016 |
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| 20140240191 | 2-PORT ANTENNA HAVING OPTIMUM IMPEDANCES OF A TRANSMITTER AND A RECEIVER - An antenna is described including a slot formed in a cavity, a substrate configured to cover a portion of the cavity and the slot, and a first port and a second port configured to supply power to the antenna using a first feeding line and a second feeding line. Each of the feeding line and the second feeding line is connected to the slot in a vertical direction and disposed to be separate from one another. A first input impedance of the antenna from the first port differs from a second input impedance of the antenna from the second port. | 08-28-2014 |
| 20150207514 | DIGITAL PHASE-LOCKED LOOP (DPLL), METHOD OF CONTROLLING DPLL, AND ULTRA LOW POWER (ULP) TRANSCEIVER USING DPLL - A phase-locked loop (PLL) includes a counter configured to measure voltage-controlled oscillator (VCO) information of an oscillator during a mask time, and a frequency tuner configured to tune a frequency of the oscillator to a target frequency, based on a comparison result obtained by comparing the VCO information to target frequency information. | 07-23-2015 |
| 20150207530 | SUPER-REGENERATIVE RECEIVER (SRR) AND SUPER-REGENERATIVE RECEPTION METHOD WITH INCREASED CHANNEL SELECTIVITY - A super-regenerative receiver (SRR) includes a super-regenerative oscillator (SRO), and an active channel filter disposed at a front end of the SRO, and configured to filter out an interferer in a signal received by the SRR. | 07-23-2015 |
| 20150288368 | METHOD AND APPARATUS FOR CALIBRATING OUTPUT FREQUENCY OF OSCILLATOR - Provided is a method and an apparatus to calibrate an output of an oscillator. The method includes calibrating the output frequency of the oscillator to be a predetermined frequency. The method also generates a differential signal corresponding to the calibrated frequency, and operates the oscillator in response to the differential signal. The oscillator is controlled by the differential signal to remove common mode noise. | 10-08-2015 |
| 20150288396 | RECEPTION APPARATUS HAVING DUAL RECEPTION STRUCTURE, AND METHOD OF RECEIVING SIGNAL USING DUAL RECEPTION STRUCTURE - A reception apparatus having a dual reception structure includes a first receiver having a first quality (Q) factor and configured to receive a signal in a predetermined band in response to the first receiver being selected by a reception controller; a second receiver having a second Q factor greater than the first Q factor and configured to receive the signal in the predetermined band in response to the second receiver being selected by the reception controller; and a reception controller configured to select one of the first receiver and the second receiver based on interference information associated with an adjacent band adjacent to the predetermined band. | 10-08-2015 |
| 20160065256 | SLIDING INTERMEDIATE FREQUENCY (IF) RECEIVER WITH ADJUSTABLE DIVISION RATIO AND SLIDING IF RECEPTION METHOD - A sliding intermediate frequency (IF) receiver and a sliding IF reception method are provided. A first local oscillation signal and a second local oscillation signal may be generated, based on a division ratio of a frequency of the first local oscillation signal to a frequency of the second local oscillation signal that is determined in advance so that an amount of power to be consumed or an error rate of the sliding IF receiver is optimized. A received input signal may be converted to a first IF signal, based on the first local oscillation signal, and the first IF signal may be converted to a second IF signal, based on the second local oscillation signal. | 03-03-2016 |
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| 20150242005 | Touch Panel having Overcoating Layer for Reducing Moire Pattern, Liquid Crystal Display Device Including Touch Panel and Method of Forming Touch Panel - A touch panel, a liquid crystal display device including the touch panel, and a method of forming the touch panel may be provided, wherein the touch panel includes an electrode layer having an electrode pattern for touch sensing; and an overcoating layer formed on an upper portion of the electrode layer and having a pattern forming a predetermined intersection angle with respect to the electrode pattern, and the liquid crystal display device includes the touch panel attached to an upper portion of the liquid crystal display device or formed within the liquid crystal display device. | 08-27-2015 |
| 20150242016 | Matrix Switching Type Touch Panel - Provided is a matrix switching type touch panel including a plurality of touch pads disposed in a visible area on a substrate in a dot matrix format, the touch pads spaced from one another, and a plurality of signal lines disposed in a space between the touch pads, each connecting a touch pad and a touch driving circuit of an invisible area. The panel comprises: unit electrodes made of a transparent electroconductive material and disposed within the visible area; touch pad areas each determined in an area corresponding to each touch pad; signal line areas each determined in an area corresponding to each signal line; and bridges electrically connecting the plurality of unit electrodes disposed in each touch pad area and each signal line area. The unit electrodes are arranged in a zigzag format with respect to a first axis parallel to the signal lines. | 08-27-2015 |
| 20150303314 | Reflective Type Display Device Including Multifunctional Electrode and Method of Manufacturing the Same - A reflective type display device may include: in each of the unit pixel regions of a lower substrate, a gate electrode connected to a gate line; a first insulating layer formed on the gate electrode; a semiconductor layer planarly overlapped with the gate electrode, with the first insulating layer interposed therebetween; a source electrode having one side connected to a data line and the other side formed to be overlapped with a portion of the semiconductor layer; a second insulating layer formed on the semiconductor layer and the source electrode; a contact hole formed by removing a portion of the second insulating layer so as to expose a partial region of the semiconductor layer; and a multifunction electrode formed on an upper portion of the second insulating layer and directly connected to the semiconductor layer through the contact hole. | 10-22-2015 |
