Patent application number | Description | Published |
20110050645 | ORGANIC LIGHT EMITTING DISPLAY DEVICE WITH TOUCH SCREEN FUNCTION - An organic light emitting display device with a touch screen function, the apparatus including a first substrate including a pixel region and a nonpixel region, a second substrate disposed above the first substrate so as to be spaced apart from the first substrate, a plurality of pixel units disposed in the pixel region, and a sensor unit disposed in the nonpixel region and detecting light, where each of the plurality of pixel units includes a red subpixel, a green subpixel and a blue subpixel, and the red subpixel is arranged so as not to be adjacent to the sensor unit. | 03-03-2011 |
20110095296 | THIN FILM TRANSISTOR AND ORGANIC LIGHT EMITTING DISPLAY DEVICE HAVING THE SAME - A thin film transistor (TFT) and an organic light emitting display device having the same are disclosed. In one embodiment, a TFT includes a gate electrode formed on a substrate. A gate insulating layer is formed on the substrate having the gate electrode. An active layer is formed on the gate insulating layer. A source electrode is formed over the active layer. A drain electrode is formed to substantially surround at least three surfaces of the source electrode on the active layer. | 04-28-2011 |
20110108840 | ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - An organic light emitting diode (OLED) display device and a method of fabricating the same are disclosed. The OLED display device includes a plurality of scan lines, a plurality of data lines, and a plurality of pixels disposed in a region in which the scan lines cross the data lines, where each pixel of the plurality of pixels includes: a switching transistor including a first gate electrode, a first semiconductor layer disposed over the first gate electrode, a first gate insulating layer interposed between the first gate electrode and the first semiconductor layer, a first source electrode and a first drain electrode, a driving transistor including a second semiconductor layer, a second gate electrode disposed over the second semiconductor layer, a second gate insulating layer interposed between the second gate electrode and the second semiconductor layer, a second source electrode and a second drain electrode, and an organic light emitting diode electrically connected with the second source and second drain electrodes of the driving transistor, where the first and second semiconductor layers are formed of the same material, and from the same processing. | 05-12-2011 |
20110169009 | ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD FOR MANUFACTURING THE SAME - In an organic light emitting diode (OLED) display and a manufacturing method thereof, the OLED display includes a substrate main body; an insulation layer pattern formed on the substrate main body, and including a first thickness layer and a second thickness layer thinner than the first thickness layer; a metal catalyst that is scattered on the first thickness layer of the insulation layer pattern; and a polycrystalline semiconductor layer formed on the insulation layer pattern, and divided into a first crystal area corresponding to the first thickness layer and to a portion of the second thickness layer adjacent to the first thickness layer and a second crystal area corresponding to the remaining part of the second thickness layer. The first crystal area of the polycrystalline semiconductor layer is crystallized through the metal catalyst, and the second crystal area of the polycrystalline semiconductor layer is solid phase crystallized. | 07-14-2011 |
20110169010 | Organic light emitting diode display device and method of fabricating the same - An organic light emitting diode display device and a method of manufacturing thereof, the device including a substrate, the substrate including a pixel part and a circuit part; a first semiconductor layer and a second semiconductor layer on the pixel part of the substrate; a gate insulating layer on an entire surface of the substrate; gate electrodes on the gate insulating layer, the gate electrodes corresponding to the first semiconductor layer and the second semiconductor layer, respectively; source/drain electrodes insulated from the gate electrodes, the source/drain electrodes being connected to the first and second semiconductor layers, respectively; a first electrode connected to the source/drain electrodes of the first semiconductor layer; an organic layer on the first electrode; a second layer on the organic layer; and a metal catalyst layer under the first semiconductor layer. | 07-14-2011 |
20110186842 | Thin film transistor and method of manufacturing the same - A method of manufacturing a thin film transistor and a thin film transistor, the method including sequentially forming a gate insulating layer, an amorphous silicon layer and an insulating layer on an entire top surface of a substrate having a gate electrode; patterning the insulating layer to form an etch stopper; and patterning the amorphous silicon layer to form a semiconductor layer. | 08-04-2011 |
20110248271 | THIN FILM TRANSISTOR AND DISPLAY DEVICE HAVING THE SAME - The described technology relates generally to a thin film transistor comprising a gate electrode, a semiconductor layer and source/drain electrode, wherein the source/drain electrode is disposed in a range of a region in which the semiconductor layer is formed. Therefore, the present embodiments can provide a thin film transistor in which reliability is excellent because a change amount of threshold voltage is small. | 10-13-2011 |
20110291122 | DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - A display device with the substrate divided into three areas. A semiconductor layer is formed in the first second areas and includes a channel area and source/drain areas; a gate insulating layer formed on the semiconductor layer in an area corresponding to the channel area; and a gate electrode formed on the gate insulating layer. The source/drain electrodes contact the source/drain areas, respectively; a pixel electrode is formed in the same layer but in a third area; an interlayer insulating layer is formed on a whole surface of the substrate including the formed structures; and a gate line is formed on the interlayer insulating layer and is electrically connected to a gate electrode of the first area through a via contact hole of the interlayer insulating layer. | 12-01-2011 |
20110297949 | Organic light emitting display and method of fabricating the same - An organic light emitting display and method of fabricating thereof, the display including a substrate including a first thin film transistor region and a second thin film transistor region; a buffer layer on the substrate; a first and a second semiconductor layer on the buffer layer; a gate insulating layer on the substrate; gate electrodes on the gate insulating layer and corresponding to the first semiconductor layer and the second semiconductor layer, respectively; source/drain electrodes insulated from the gate electrode and being connected to the first semiconductor layer and the second semiconductor layer, respectively; an insulating layer on the substrate; a first electrode connected to the source/drain electrode electrically connected to the first semiconductor layer; an organic layer on the first electrode; and a second electrode on the organic layer, wherein portions of the buffer layer corresponding to a source/drain region of the first semiconductor layer include a metal catalyst. | 12-08-2011 |
20110297951 | ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD FOR MANUFACTURING THE SAME - An organic light emitting diode (OLED) display and a manufacturing method thereof, the OLED display includes: a substrate main body; a polycrystalline silicon layer pattern including a polycrystalline active layer formed on the substrate main body and a first capacitor electrode; a gate insulating layer pattern formed on the polycrystalline silicon layer pattern; a first conductive layer pattern including a gate electrode and a second capacitor electrode that are formed on the gate insulating layer pattern; an interlayer insulating layer pattern formed on the first conductive layer pattern; and a second conductive layer pattern including a source electrode, a drain electrode and a pixel electrode that are formed on the interlayer insulating layer pattern. The gate insulating layer pattern is patterned at a same time with any one of the polycrystalline silicon layer pattern and the first conductive layer pattern. | 12-08-2011 |
20110303921 | DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A display device includes a substrate, a first conductive film pattern including a gate electrode and a first capacitor electrode on the substrate, a gate insulating layer pattern on the first conductive film pattern, a polycrystalline silicon film pattern including an active layer and a second capacitor electrode on the gate insulating layer pattern, an interlayer insulating layer on the polycrystalline silicon film pattern, a plurality of first contact holes through the gate insulating layer pattern and the interlayer insulating layer to expose a portion of the first conductive film pattern, a plurality of second contact holes through the interlayer insulating layer to expose a portion of the polycrystalline silicon film pattern, and a second conductive film pattern including a source electrode, a drain electrode, and a pixel electrode on the interlayer insulating layer. | 12-15-2011 |
20120001156 | ORGANIC LIGHT EMITTING DIODE DISPLAY - An organic light emitting diode display is disclosed. The organic light emitting diode display includes: a substrate including a first region and a second region, a first gate electrode formed over the first region, a second gate electrode formed over the second region, a first gate insulator formed on the first gate electrode, a second gate insulator formed on the second gate electrode, a first semiconductor layer formed on the first gate insulator, the first semiconductor layer including a first channel region, a second semiconductor layer formed on the second gate insulator, the second semiconductor layer including a second channel region, an interlayer insulator formed over the substrate and over at least part of the first and second semiconductor layers, a first etching stop layer formed over the first channel region and surrounded by the interlayer insulator, a second etching stop layer formed over the second channel region and surrounded by the interlayer insulator, a first source electrode and a first drain electrode contacting the first semiconductor layer through the interlayer insulator, and a second source electrode and a second drain electrode contacting the second semiconductor layer through the interlayer insulator. | 01-05-2012 |
20120104393 | Organic light emitting diode display device and manufacturing method thereof - An OLED display includes a first polysilicon layer pattern on a substrate having a first gate electrode, a second gate electrode, and a first capacitor electrode, a gate insulating layer pattern, a second polysilicon layer pattern including a first active layer, a second active layer, and a capacitor polycrystalline dummy layer, a third amorphous silicon layer pattern including first source and drain resistant contact layers on a predetermined region of the first active layer, second source and drain resistant contact layers on a predetermined region of the second active layer, and a capacitor amorphous dummy layer on the capacitor polycrystalline dummy layer, and a data metal layer pattern including first source/drain electrodes, second source/drain electrodes, and a second capacitor electrode. | 05-03-2012 |
20120267629 | Organic Light-Emitting Display Apparatus and Method of Manufacturing the Same - In an organic light-emitting display apparatus for improving image quality and a method of manufacturing the same, the organic light-emitting display apparatus comprises a substrate, a first electrode disposed on the substrate, an intermediate layer disposed on the first electrode and including an organic emission layer, a second electrode disposed on the intermediate layer, and a reflective unit disposed near the intermediate layer and reflecting visible light emitted from the intermediate layer. | 10-25-2012 |
20120301985 | METHOD OF ADJUSTING GAP BETWEEN BUMPS IN PIXEL REGION AND METHOD OF MANUFACTURING DISPLAY DEVICE USING THE METHOD - A method of manufacturing a display device includes forming a buffer layer on a top surface of a substrate, forming an amorphous silicon layer on a top surface of the buffer layer, and forming a polysilicon layer by irradiating the amorphous silicon layer with a laser beam. A plurality of first protrusions are formed on the top surface of the polysilicon layer, and a plurality of second protrusions are formed on a surface of the buffer layer by transferring the shape of the polysilicon layer to the buffer layer. A gate insulator on the buffer layer is then formed in the shape of bumps of the second protrusions. | 11-29-2012 |
20130164872 | METHOD OF FABRICATING ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE - An organic light emitting diode display device and a method of manufacturing thereof, the device including a substrate, the substrate including a pixel part and a circuit part; a first semiconductor layer and a second semiconductor layer on the pixel part of the substrate; a gate insulating layer on an entire surface of the substrate; gate electrodes on the gate insulating layer, the gate electrodes corresponding to the first semiconductor layer and the second semiconductor layer, respectively; source/drain electrodes insulated from the gate electrodes, the source/drain electrodes being connected to the first and second semiconductor layers, respectively; a first electrode connected to the source/drain electrodes of the first semiconductor layer; an organic layer on the first electrode; a second layer on the organic layer; and a metal catalyst layer under the first semiconductor layer. | 06-27-2013 |
20130302928 | ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - An organic light emitting diode (OLED) display device and a method of fabricating the same are disclosed. The OLED display device includes a plurality of scan lines, a plurality of data lines, and a plurality of pixels disposed in a region in which the scan lines cross the data lines, where each pixel of the plurality of pixels includes: a switching transistor including a first gate electrode, a first semiconductor layer disposed over the first gate electrode, a first gate insulating layer interposed between the first gate electrode and the first semiconductor layer, a first source electrode and a first drain electrode, a driving transistor including a second semiconductor layer, a second gate electrode disposed over the second semiconductor layer, a second gate insulating layer interposed between the second gate electrode and the second semiconductor layer, a second source electrode and a second drain electrode, and an organic light emitting diode electrically connected with the second source and second drain electrodes of the driving transistor, where the first and second semiconductor layers are formed of the same material, and from the same processing. | 11-14-2013 |
20140038333 | DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A display device includes a substrate, a first conductive film pattern including a gate electrode and a first capacitor electrode on the substrate, a gate insulating layer pattern on the first conductive film pattern, a polycrystalline silicon film pattern including an active layer and a second capacitor electrode on the gate insulating layer pattern, an interlayer insulating layer on the polycrystalline silicon film pattern, a plurality of first contact holes through the gate insulating layer pattern and the interlayer insulating layer to expose a portion of the first conductive film pattern, a plurality of second contact holes through the interlayer insulating layer to expose a portion of the polycrystalline silicon film pattern, and a second conductive film pattern including a source electrode, a drain electrode, and a pixel electrode on the interlayer insulating layer. | 02-06-2014 |
20140051218 | THIN FILM SEMICONDUCTOR DEVICE COMPRISING A POLYCRYSTALLINE SEMICONDUCTOR LAYER FORMED ON AN INSULATION LAYER HAVING DIFFERENT THICKNESS - In an organic light emitting diode (OLED) display and a manufacturing method thereof, the OLED display includes a substrate main body; an insulation layer pattern formed on the substrate main body, and including a first thickness layer and a second thickness layer thinner than the first thickness layer; a metal catalyst that is scattered on the first thickness layer of the insulation layer pattern; and a polycrystalline semiconductor layer formed on the insulation layer pattern, and divided into a first crystal area corresponding to the first thickness layer and to a portion of the second thickness layer adjacent to the first thickness layer and a second crystal area corresponding to the remaining part of the second thickness layer. The first crystal area of the polycrystalline semiconductor layer is crystallized through the metal catalyst, and the second crystal area of the polycrystalline semiconductor layer is solid phase crystallized. | 02-20-2014 |
20140179044 | METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DIODE DISPLAY - An OLED display includes a first polysilicon layer pattern on a substrate having a first gate electrode, a second gate electrode, and a first capacitor electrode, a gate insulating layer pattern, a second polysilicon layer pattern including a first active layer, a second active layer, and a capacitor polycrystalline dummy layer, a third amorphous silicon layer pattern including first source and drain resistant contact layers on a predetermined region of the first active layer, second source and drain resistant contact layers on a predetermined region of the second active layer, and a capacitor amorphous dummy layer on the capacitor polycrystalline dummy layer, and a data metal layer pattern including first source/drain electrodes, second source/drain electrodes, and a second capacitor electrode. | 06-26-2014 |
20140199794 | ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD FOR MANUFACTURING THE SAME - An organic light emitting diode (OLED) display and a manufacturing method thereof, the OLED display includes: a substrate main body; a polycrystalline silicon layer pattern including a polycrystalline active layer formed on the substrate main body and a first capacitor electrode; a gate insulating layer pattern formed on the polycrystalline silicon layer pattern; a first conductive layer pattern including a gate electrode and a second capacitor electrode that are formed on the gate insulating layer pattern; an interlayer insulating layer pattern formed on the first conductive layer pattern; and a second conductive layer pattern including a source electrode, a drain electrode and a pixel electrode that are formed on the interlayer insulating layer pattern. The gate insulating layer pattern is patterned at a same time with any one of the polycrystalline silicon layer pattern and the first conductive layer pattern. | 07-17-2014 |