Patent application number | Description | Published |
20090066678 | D/A Conversion Circuit And Semiconductor Device - A D/A conversion circuit in accordance with the present invention, which is provided with a switch swD, allows a writing operation of a voltage (a true gradation voltage) to be performed at a higher speed by first applying a first voltage (a voltage close to the true gradation voltage), which is supplied without passing through a resistor element, to an output line and then applying a second voltage (the true gradation voltage), which is supplied via the resistor element, to the output line. Thus, the present invention can provide a D/A conversion circuit capable of writing display data to liquid crystal cells with higher precision at higher speed, and a semiconductor device utilizing such a D/A conversion circuit. | 03-12-2009 |
20090295704 | Shift Register Circuit, Driving Circuit of Display Device, and Display Device Using the Driving Circuit - There is provided a driving circuit which is simple and has a small occupied area. A shift register circuit of the present invention includes a plurality of register circuits. Each of the register circuits includes a clocked inverter circuit and an inverter circuit. Both are connected in series with each other so that an output signal of the clocked inverter circuit becomes an input signal of the inverter circuit. Further, the register circuit includes a signal line by which an output signal of the inverter circuit is transmitted. Since a number of elements are connected to the signal line and parasitic capacitance is large, it has a high load. The shift register circuit of the present invention uses the fact that since the parasitic capacitance of the signal line is large, it has a high load. | 12-03-2009 |
20100090994 | Image Display Device and Driving Method Thereof - An occupying area of a digital system signal line driver circuit in an image display device is large and this hinders the miniaturization of the display device. A memory circuit and a D/A converter circuit in the signal line driver circuit are commonly used for n (ānā is a natural number equal to or larger than 2) signal lines. One horizontal scanning period is divided into n periods and the memory circuit and the D/A converter circuit each perform processing for different signal lines during each of the divided periods. Thus, all the signal lines can be driven. Therefore, the number of memory circuits and the number of D/A converter circuits in the signal line driver circuit can be reduced to one n-th in a conventional case. | 04-15-2010 |
20100328128 | D/A Conversion Circuit and Semiconductor Device - A D/A conversion circuit in accordance with the present invention, which is provided with a switch swD, allows a writing operation of a voltage (a true gradation voltage) to be performed at a higher speed by first applying a first voltage (a voltage close to the true gradation voltage), which is supplied without passing through a resistor element, to an output line and then applying a second voltage (the true gradation voltage), which is supplied via the resistor element, to the output line. Thus, the present invention can provide a D/A conversion circuit capable of writing display data to liquid crystal cells with higher precision at higher speed, and a semiconductor device utilizing such a D/A conversion circuit. | 12-30-2010 |
20110095312 | Semiconductor Device and Method of Manufacturing the Same - An object of the present invention is to provide a semiconductor device having high operation characteristic and reliability. | 04-28-2011 |
20120001244 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREFOR - In an active matrix type liquid crystal display device, in which functional circuits such as a shift register circuit and a buffer circuit are incorporated on the same substrate, an optimal TFT structure is provided along with the aperture ratio of a pixel matrix circuit is increased. There is a structure in which an n-channel TFT, with a third impurity region which overlaps a gate electrode, is formed in a buffer circuit, etc., and an n-channel TFT, in which a fourth impurity region which does not overlap the gate electrode, is formed in a pixel matrix circuit. A storage capacitor formed in the pixel matrix circuit is formed by a light shielding film, a dielectric film formed on the light shielding film, and a pixel electrode. Al is especially used in the light shielding film, and the dielectric film is formed anodic oxidation process, using an Al oxide film. | 01-05-2012 |
20120098689 | D/A Conversion Circuit and Semiconductor Device - A D/A conversion circuit in accordance with the present invention, which is provided with a switch swD, allows a writing operation of a voltage (a true gradation voltage) to be performed at a higher speed by first applying a first voltage (a voltage close to the true gradation voltage), which is supplied without passing through a resistor element, to an output line and then applying a second voltage (the true gradation voltage), which is supplied via the resistor element, to the output line. Thus, the present invention can provide a D/A conversion circuit capable of writing display data to liquid crystal cells with higher precision at higher speed, and a semiconductor device utilizing such a D/A conversion circuit. | 04-26-2012 |
20120287096 | DRIVING METHOD OF AN ELECTRIC CIRCUIT - A variation in threshold may be suppressed by structuring an analog switch by a MOS transistor and forming a signal synchronized to a clock by making the clock which is a common signal in continuity or discontinuity. An object of the present invention is to reduce the variation in the signal synchronized to the clock by the variation in threshold of the MOS transistor in a circuit which is synchronized to the clock. | 11-15-2012 |
20130241813 | DRIVING METHOD OF AN ELECTRIC CIRCUIT - A variation in threshold may be suppressed by structuring an analog switch by a MOS transistor and forming a signal synchronized to a clock by making the clock which is a common signal in continuity or discontinuity. An object of the present invention is to reduce the variation in the signal synchronized to the clock by the variation in threshold of the MOS transistor in a circuit which is synchronized to the clock. | 09-19-2013 |
20130341626 | Semiconductor Device and Method of Manufacturing the Same - An object of the present invention is to provide a semiconductor device having high operation characteristic and reliability. The measures taken are: A pixel capacitor is formed between an electrode comprising anodic capable material over an organic resin film, an anodic oxide film of the electrode and a pixel electrode above. Since the anodic oxide film is anodically oxidized by applied voltage per unit time at 15 V/min, there is no wrap around on the electrode, and film peeling can be prevented. | 12-26-2013 |
20150014691 | SEMICONDUCTOR DEVICE COMPRISING A SECOND ORGANIC FILM OVER A THIRD INSULATING FILM WHEREIN THE SECOND ORGANIC FILM OVERLAPS WITH A CHANNEL FORMATION REGION AND A SECOND CONDUCTIVE FILM - In an active matrix type liquid crystal display device, in which functional circuits such as a shift register circuit and a buffer circuit are incorporated on the same substrate, an optimal TFT structure is provided along with the aperture ratio of a pixel matrix circuit is increased. There is a structure in which an n-channel TFT, with a third impurity region which overlaps a gate electrode, is formed in a buffer circuit, etc., and an n-channel TFT, in which a fourth impurity region which does not overlap the gate electrode, is formed in a pixel matrix circuit. A storage capacitor formed in the pixel matrix circuit is formed by a light shielding film, a dielectric film formed on the light shielding film, and a pixel electrode. Al is especially used in the light shielding film, and the dielectric film is formed anodic oxidation process, using an Al oxide film. | 01-15-2015 |