Patent application number | Description | Published |
20090148790 | RADIATION-SENSITIVE RESIN COMPOSITION - A radiation-sensitive resin composition suitable as a chemically-amplified resist useful for microfabrication utilizing various types of radiation such as deep ultraviolet rays represented by a KrF excimer laser or ArF excimer laser. The radiation-sensitive resin composition of the present invention comprises: (A) a resin comprising a recurring unit (1-1) shown by the following formula (I-1) and (B) a radiation-sensitive acid generator such as 1-(4-n-butoxynaphthyl)tetrahydrothiophenium nonafluoro-n-butanesulfonate. The radiation-sensitive resin composition may further comprise (C) an acid diffusion controller such as phenylbenzimidazole. | 06-11-2009 |
20090202945 | FLUORINE-CONTAINING POLYMER, PURIFICATION METHOD, AND RADIATION-SENSITIVE RESIN COMPOSITION - An object of the present invention is to provide a novel fluorine-containing polymer, a radiation-sensitive resin composition for liquid immersion lithography which contains the fluorine-containing polymer, which leads to a pattern having an excellent shape and excellent depth of focus, wherein the amount of an eluted component in a liquid for liquid immersion lithography such as water that comes in contact with the resist during exposure in liquid immersion lithography is little, and which provides a larger receding contact angle between the resist film and the liquid for liquid immersion lithography such as water, and a method for purifying the fluorine-containing polymer. The present resin composition comprises a novel fluorine-containing polymer (A) containing repeating units represented by the general formulae (1) and (2) and having Mw of 1,000-50,000, a resin (B) having an acid-unstable group, a radiation-sensitive acid generator (C), a nitrogen-containing compound (D) and a solvent (E). | 08-13-2009 |
20100003615 | UPPER LAYER-FORMING COMPOSITION AND PHOTORESIST PATTERNING METHOD - An upper layer-forming composition formed on a photoresist while causing almost no intermixing with the photoresist film and a photoresist patterning method are provided. The upper layer-forming composition is stably maintained without being eluted in a medium such as water during liquid immersion lithography and is easily dissolved in an alkaline developer. The upper layer-forming composition covers a photoresist film for forming a pattern by exposure to radiation. The composition comprises a resin dissolvable in a developer for the photoresist film and a solvent in which the resin is dissolved. The solvent has a viscosity of less than 5.2×10 | 01-07-2010 |
20100021852 | COMPOSITION FOR FORMATION OF UPPER LAYER FILM, AND METHOD FOR FORMATION OF PHOTORESIST PATTERN - A composition for formation of upper layer film, which is used for forming an upper layer film on the surface of a photoresist film and which comprises
| 01-28-2010 |
20100040974 | UPPER LAYER FILM FORMING COMPOSITION AND METHOD OF FORMING PHOTORESIST PATTERN - An upper layer film forming composition for forming an upper layer film on the surface of a photoresist film includes (A) a resin dissolvable in a developer for the photoresist film and (B) a compound having a sulfonic acid residue group, the composition forming an upper layer film with a receding contact angle to water of 70° or more. The upper layer film forming composition of the present invention can form an upper layer film which has a sufficient transparency and is stably maintained without eluting the components into a medium without being intermixed with a photoresist film, can form a resist pattern with high resolution while effectively suppressing a defect, and can suppress a blob defect. | 02-18-2010 |
20100068650 | POSITIVE-WORKING RADIATION-SENSITIVE COMPOSITION AND METHOD FOR RESIST PATTERN FORMATION USING THE COMPOSITION - A method of patterning using double exposure patterning in a liquid immersion lithographic process is provided. The patterning method comprises a step of forming a first pattern on a substrate using a first resist layer forming composition, a step of making the first pattern inactive, a step of forming a second pattern on a substrate on which a pattern has been formed using a second resist layer forming composition and exposing the second resist layer to radiation, and a step of developing the exposed resist layer to form a second pattern in the space area of the first pattern. The first resist layer forming composition contains a cross-linking agent which accelerates conversion of the first layer from positive-working to negative-working. | 03-18-2010 |
20100203447 | RADIATION-SENSITIVE RESIN COMPOSITION - A radiation-sensitive resin composition includes (A) an acid labile group-containing resin which becomes alkali-soluble by an action of an acid, (B) a radiation-sensitive acid generator, and (C) a solvent. The resin (A) includes repeating units shown by formulas (1) and (2), wherein R | 08-12-2010 |
20100203452 | RADIATION-SENSITIVE COMPOSITION - A radiation-sensitive composition includes a polymer (A) which includes a repeating unit (1) shown by the following formula (1) and a repeating unit (2) shown by the following formula (2), and a radiation-sensitive acid generator (B). | 08-12-2010 |
20100221664 | RADIATION-SENSITIVE COMPOSITION - A radiation-sensitive composition includes (A) a first polymer which becomes alkali-soluble by the action of an acid and does not contain a fluorine atom, (B) a second polymer having a repeating unit (b1) shown by the following formula (1) and a fluorine-containing repeating unit (b2), and (C) a radiation-sensitive acid generator, the content of the second polymer (B) in the composition being 0.1 to 20 parts by mass relative to 100 parts by mass of the first polymer (A). | 09-02-2010 |
20100255416 | COMPOSITION FOR FORMING UPPER LAYER FILM FOR IMMERSION EXPOSURE, UPPER LAYER FILM FOR IMMERSION EXPOSURE, AND METHOD OF FORMING PHOTORESIST PATTERN - The object of the invention is to provide a composition for forming an upper layer film for immersion exposure capable of forming an upper layer film effectively inhibited from developing defects through an immersion exposure process, such as a watermark defect and dissolution residue defect. Also provided are an upper layer film for immersion exposure and a method of forming a resist pattern. The composition for forming an upper layer film includes a resin ingredient and a solvent. The resin ingredient includes a resin (A) having at least one kind of repeating units selected among those represented by the formulae (1-1) to (1-3) and at least either of the two kinds of repeating units represented by the formulae (2-1) and (2-2). (1-1) (1-2) (1-3) (2-1) (2-2) [In the formulae, R | 10-07-2010 |
20110104611 | NOVEL COMPOUND, POLYMER, AND RADIATION-SENSITIVE COMPOSITION - A compound is shown by a following formula (1), | 05-05-2011 |
20110151378 | RADIATION-SENSITIVE RESIN COMPOSITION FOR LIQUID IMMERSION LITHOGRAPHY, POLYMER, AND RESIST PATTERN-FORMING METHOD - A radiation-sensitive resin composition for liquid immersion lithography includes a resin component, a photoacid generator and a solvent. The resin component includes an acid-dissociable group-containing resin in an amount of more than 50% by mass. The acid-dissociable group-containing resin includes a repeating unit that includes a fluorine atom and an acid-dissociable group in a side chain of the repeating unit. | 06-23-2011 |
20110212401 | RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST PATTERN FORMATION METHOD - A radiation-sensitive resin composition includes a resin, a photoacid generator, a fluorine-containing resin, and a lactone compound. The resin does not include a first fluorine-containing repeating unit. The resin includes a first repeating unit that becomes alkali-soluble due to an acid. The fluorine-containing resin includes a second fluorine-containing repeating unit and a second repeating unit that becomes alkali-soluble due to an acid. A content of the lactone compound in the radiation-sensitive resin composition is about 31 to about 200 parts by mass based on 100 parts by mass of the resin. | 09-01-2011 |
20110262865 | RADIATION-SENSITIVE RESIN COMPOSITION AND POLYMER - A radiation-sensitive resin composition includes a resin and a photoacid generator. The resin includes a polymer including a first repeating unit shown by a following formula (1) and an acid-dissociable group-containing repeating unit, | 10-27-2011 |
20120021359 | UPPER LAYER-FORMING COMPOSITION AND RESIST PATTERNING METHOD - A liquid immersion lithography upper-layer film-forming composition includes (A) a polymer that includes a structural unit (I) shown by the following formula (1), and (S) a solvent. R | 01-26-2012 |
20120028198 | UPPER LAYER-FORMING COMPOSITION AND PHOTORESIST PATTERNING METHOD - An upper layer-forming composition includes a resin, and a solvent. The resin is dissolvable in a developer for a photoresist film which is to be covered by the upper layer-forming composition to form a pattern by exposure to radiation. The solvent dissolves the resin in the solvent. The solvent includes a compound shown by a formula (1). Each of R | 02-02-2012 |
20120065291 | RADIATION-SENSITIVE RESIN COMPOSITION, POLYMER, AND COMPOUND - A radiation-sensitive resin composition includes a first polymer including a repeating unit represented by a following formula (I). X | 03-15-2012 |
20120100480 | COMPOUND, FLUORINE-CONTAINING POLYMER, RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD FOR PRODUCING COMPOUND - A compound has a following general formula (1). | 04-26-2012 |
20120129352 | SILICON-CONTAINING FILM, RESIN COMPOSITION, AND PATTERN FORMATION METHOD - A pattern-forming method includes forming a silicon-containing film on a substrate, the silicon-containing film having a mass ratio of silicon atoms to carbon atoms of 2 to 12. A shape transfer target layer is formed on the silicon-containing film. A fine pattern is transferred to the shape transfer target layer using a stamper that has a fine pattern to form a resist pattern. The silicon-containing film and the substrate are dry-etched using the resist pattern as a mask to form a pattern on the substrate in nanoimprint lithography. According to another aspect of the invention, a silicon-containing film includes silicon atoms and carbon atoms. A mass ratio of silicon atoms to carbon atoms is 2 to 12. The silicon-containing film is used for a pattern-forming method employed in nanoimprint lithography. | 05-24-2012 |
20120164586 | PATERN FORMING METHOD - A pattern forming method includes forming a photoresist film on a substrate using a radiation-sensitive composition. An immersion liquid protecting film insoluble in an immersion liquid is formed on the photoresist film. The photoresist film is exposed to radiation through a mask having a predetermined pattern and through the immersion liquid. The exposed photoresist film is developed to form a photoresist pattern. The radiation-sensitive composition includes a polymer and a radiation-sensitive acid generator. The polymer includes a repeating unit (1) shown by a following formula (1) and a repeating unit (2) shown by a following formula (2). R | 06-28-2012 |
20120282553 | IMMERSION UPPER LAYER FILM FORMING COMPOSITION AND METHOD OF FORMING PHOTORESIST PATTERN - An immersion upper layer film composition includes a resin and a solvent. The resin forms a water-stable film during irradiation and is dissolved in a subsequent developer. The solvent contains a monovalent alcohol having 6 or less carbon atoms. The composition is to be applied to form a coat on a photoresist film in an immersion exposure process in which the photoresist film is irradiated through water provided between a lens and the photoresist film. | 11-08-2012 |
20120295197 | RADIATION-SENSITIVE RESIN COMPOSITION, POLYMER AND METHOD FOR FORMING A RESIST PATTERN - A radiation-sensitive resin composition includes a first polymer, a second polymer and a radiation-sensitive acid generator. The first polymer has a structure unit represented by a following formula (1-1), a structure unit represented by a following formula (1-2), or both thereof, and has a content of fluorine atoms of no less than 5% by mass to a total mass of the first polymer. The second polymer has an acid-dissociable group, and has a content of fluorine atoms of less than 5% by mass to a total mass of the second polymer. | 11-22-2012 |
20130164695 | METHOD FOR FORMING PATTERN - A method for forming a pattern includes providing a first positive-working radiation-sensitive resin composition on a substrate to form a first resist layer. The first positive-working radiation-sensitive resin composition includes a crosslinking agent, a polymer containing an acid-unstable group and not containing a crosslinking group, a radiation-sensitive acid generator, and a solvent. The first resist layer is exposed selectively to radiation, and developed to form a first resist pattern. The first resist pattern is made inactive to radiation, or insolubilized in an alkaline developer or in a second positive-working radiation-sensitive resin composition. The second positive-working radiation-sensitive resin composition is provided on the substrate to form a second resist layer. The second resist layer is exposed selectively to radiation, and developed to form a second resist pattern in the space area of the first resist pattern. | 06-27-2013 |
20130216961 | COMPOSITION FOR FORMING UPPER LAYER FILM FOR IMMERSION EXPOSURE, UPPER LAYER FILM FOR IMMERSION EXPOSURE, AND METHOD OF FORMING PHOTORESIST PATTERN - A composition for forming an upper layer film includes a solvent and a resin component including a first resin having a first repeating unit and a second repeating unit. The first repeating unit is a repeating unit represented by a formula (1-1), a repeating unit represented by a formula (1-2), a repeating unit represented by a formula (1-3), or a combination thereof. The second repeating unit is a repeating unit represented by a formula (2-1), a repeating unit represented by a formula (2-2), or both thereof. The composition is to be used for forming the upper layer film in liquid immersion lithography. | 08-22-2013 |
20140162190 | FLUORINE-CONTAINING POLYMER, PURIFICATION METHOD, AND RADIATION-SENSITIVE RESIN COMPOSITION - A fluorine-containing polymer for use in a radiation-sensitive resin composition is used for forming a photoresist film in a process of forming a resist pattern, including a liquid immersion lithographic process in which radiation is emitted through a liquid having a refractive index larger than the refractive index of air at a wavelength of 193 nm, and being present between a lens and the photoresist film. The fluorine-containing polymer has a weight average molecular weight determined by gel permeation chromatography in the range from 1,000 to 50,000 and a receding contact angle with water and the photoresist film formed therefrom is 70° or more. | 06-12-2014 |