Patent application number | Description | Published |
20120217505 | SEMICONDUCTOR DEVICE - A semiconductor device including a field effect transistor having a buffer layer subjected to lattice relaxation, a channel layer, and an electron supply layer formed in this order with group-III nitride semiconductors respectively in a growth mode parallel with a [0001] or [000-1] crystallographic axis over a substrate and having a source electrode and a drain electrode, those being coupled electrically to the channel layer, and a gate electrode formed over the electron supply layer, in which, in the buffer layer and the electron supply layer, a layer existing on the group-III atomic plane side of the channel layer has an A-axis length larger than a layer existing on the group-V atomic plane side of the channel layer; and the electron supply layer has a bandgap larger than the channel layer. | 08-30-2012 |
20120257790 | IMAGE PROCESSING APPARATUS, IMAGE PROCESSING METHOD, AND PROGRAM - There is provided an image processing apparatus that includes a move detecting unit that detects a move of a subject contained in a moving image from plural frame images, based on an image signal that indicates the moving image including the frame image and delay time information that indicates a delay time of an image pickup, and a correcting unit that corrects the image signal, based on the image signal and move information that indicates a move of a detected subject. | 10-11-2012 |
20130101043 | ENCODING APPARATUS, ENCODING METHOD AND PROGRAM - There is provided an encoding apparatus, including an intra-block determination section which determines that a prediction mode of a block is a forced intra-prediction mode, by a frequency based on a priority of each block of an image to be encoded, an encoding section which encodes the block, to which the prediction mode has been determined to be an intra-prediction mode by the intra-block determination section, with the intra-prediction mode, and a transmission section which transmits an encoded result of the image to be encoded obtained by the encoding section, and the prediction mode of the image. | 04-25-2013 |
20130148944 | IMAGE PROCESSING DEVICE AND IMAGE PROCESSING METHOD - The present technology is related to an image processing device and image processing method that enables the generating of 3D images that can be viewed safely and comfortably. | 06-13-2013 |
20130292690 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - In a high electron mobility transistor, with a normally-off operation maintained, on-resistance can be sufficiently reduced, so that the performance of a semiconductor device including the high electron mobility transistor is improved. Between a channel layer and an electron supply layer, a spacer layer whose band gap is larger than the band gap of the electron supply layer is provided. Thereby, due to the fact that the band gap of the spacer layer is large, a high potential barrier (electron barrier) is formed in the vicinity of an interface between the channel and the electron supply layer. | 11-07-2013 |
20140084300 | SEMICONDUCTOR DEVICE - A field effect transistor includes a substrate and a semiconductor layer provided on the substrate, wherein the semiconductor layer includes a lower barrier layer provided on the substrate, Ga-face grown, lattice relaxed, and having a composition In | 03-27-2014 |
20140099039 | IMAGE PROCESSING DEVICE, IMAGE PROCESSING METHOD, AND IMAGE PROCESSING SYSTEM - There is provided an image processing device including a converter configured to obtain, prior to performing an encoding process, image drawing information of an image capable of using upon encoding and to convert the obtained image drawing information into a parameter for encoding, and an encoding processor configured to perform the encoding process by changing contents of the encoding process according to the parameter for encoding converted by the converter. | 04-10-2014 |
20140209922 | SEMICONDUCTOR DEVICE - A high electron mobility transistor having a channel layer, electron supply layer, source electrode, and drain electrode is included so as to have a cap layer formed on the electron supply layer between the source and drain electrodes and having an inclined side surface, an insulating film having an opening portion on the upper surface of the cap layer and covering the side surface thereof, and a gate electrode is formed in the opening portion and extending, via the insulating film, over the side surface of the cap layer on the drain electrode side. The gate electrode having an overhang on the drain electrode side can reduce the peak electric field. | 07-31-2014 |
20140334537 | IMAGE PROCESSING DEVICE AND IMAGE PROCESSING METHOD - The present technology is related to an image processing device and image processing method that enables the generating of 3D images that can be viewed safely and comfortably. | 11-13-2014 |
20150030235 | IMAGE PROCESSING DEVICE, IMAGE PROCESSING METHOD, AND COMPUTER PROGRAM - Provided is an image processing device including a disparity detector configured to receive a plurality of 3D images and detect disparity of each of the 3D images, a disparity analyzer configured to generate statistical information about disparity of each 3D image using the disparity of each 3D image detected by the disparity detector, and a disparity controller configured to convert the disparity using the statistical information about disparity of each 3D image generated by the disparity analyzer in such a manner that the 3D images are not overlapped so that a range of the disparity is within a predetermined range. | 01-29-2015 |
20150036003 | IMAGING CONTROL DEVICE, IMAGE PROCESSING DEVICE, IMAGING CONTROLLING METHOD, AND IMAGE PROCESSING METHOD - Provided is an imaging control device including a result receiving unit configured to receive an example image selected by an image processing device used for image processing using image information, the image information being information regarding an image captured by an imaging unit used for image capturing, a selection result transmitting unit configured to transmit information regarding the example image received by the result receiving unit to the image processing device, a setting receiving unit configured to receive setting information generated by the image processing device based on the example image transmitted from the selection result transmitting unit, the setting information indicating a setting condition when image capturing is performed like the example image, and a setting change unit configured to change an imaging setting of the imaging unit using the setting information received by the setting receiving unit. | 02-05-2015 |
20150076511 | SEMICONDUCTOR DEVICE - A field effect transistor includes a substrate and a semiconductor layer provided on the substrate, wherein the semiconductor layer includes a lower barrier layer provided on the substrate, Ga-face grown, lattice relaxed, and having a composition In | 03-19-2015 |
20150084104 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND THE SEMICONDUCTOR DEVICE - Characteristics of a high electron mobility transistor are improved. A stack having an n-type contact layer (n-type AlGaN layer), an electron supply layer (undoped AlGaN layer), and a channel layer (undoped GaN layer) is formed in a growth mode over a Ga plane parallel with a [0001] crystal axis direction. Then, after turning the stack upside down so that the n-type contact layer (n-type AlGaN layer) is situated to the upper surface and forming a trench, a gate electrode is formed by way of a gate insulation film. By stacking the channel layer (undoped GaN layer) and the electron supply layer (undoped AlGaN layer) successively in a [000-1] direction, (1) normally off operation and (2) increase of withstanding voltage can easily be compatible with each other. | 03-26-2015 |