Patent application number | Description | Published |
20080211062 | NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device and a manufacturing method thereof are provided which enable reduction and enhanced stability of contact resistance between the back surface of a nitride substrate and an electrode formed thereover. A nitride semiconductor device includes an n-type GaN substrate ( | 09-04-2008 |
20080237639 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - The objective of the present invention is to provide a semiconductor device of a hetero-junction field effect transistor that is capable of obtaining a high output and a high breakdown voltage and a manufacturing method of the same. | 10-02-2008 |
20100129991 | NITRIDE SEMICONDUCTOR DEVICE HAVING A SILICON-CONTAINING LAYER AND MANUFACTURING METHOD THEREOF - A semiconductor device and a manufacturing method thereof are provided which enable reduction and enhanced stability of contact resistance between the back surface of a nitride substrate and an electrode formed thereover. A nitride semiconductor device includes an n-type Ga—N substrate ( | 05-27-2010 |
20100156405 | MAGNETIC FIELD DETECTION DEVICE - A magnetic field detection device including a magnetic body (magnetic flux guide) provided for adjusting a magnetic field to be applied to a magneto-resistance element. A shape of an on-substrate magnetic body in plan view is a tapered shape on one end portion side and a substantially funnel shape on another end portion side opposite the one end portion, the another end portion being larger in width than the one end portion, and a magneto-resistance element is disposed in front of an output-side end portion. In the on-substrate magnetic body, a contour of a tapered portion is not linear like a funnel, but has a curved shape in which a first curved portion protruding outward with a gentle curvature and a second curved portion protruding inward with a curvature similar to that of the first curved portion are continuously formed. | 06-24-2010 |
20110003079 | PROCESSES FOR PREPARING COATED PAPERS - An object of the present invention is to provide a process for preparing a high-quality coated paper with high runnability while preventing damage to the elastic roll surface of the soft calender encountered during high-speed operation. The present invention provides a process for preparing a coated paper, comprising the steps of: making a base paper; applying a coating solution containing a pigment and an adhesive on the base paper to form one or more pigment coating layers; and surface-treating the pigment coating layers by a soft calender, said papermaking and coating steps being performed at an operating speed of 1300 m/min; wherein said surface-treating step comprises treating the outermost one of the pigment coating layers using a soft calender comprising a metallic roll and an elastic roll with at least two or more nips and wherein the elastic roll has a Shore D hardness of 90-96 and the metallic roll surface temperature at the first nip is less than 130° C. | 01-06-2011 |
20110316047 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - The objective of the present invention is to provide a semiconductor device of a hetero-junction field effect transistor that is capable of obtaining a high output and a high breakdown voltage and a manufacturing method of the same. The present invention is a semiconductor device of a hetero junction field effect transistor provided with an Al | 12-29-2011 |
20130029176 | PROCESS FOR PRODUCING ENVIRONMENTALLY-FRIENDLY STEEL SHEET FOR CONTAINER MATERIAL, ENVIRONMENTALLY-FRIENDLY STEEL SHEET FOR CONTAINER MATERIAL, AND LAMINATED AND PRE-COATED STEEL SHEET FOR CONTAINER MATERIAL USING THE SAME - Disclosed is a method for the cathodic electrocoating of a tin-coated steel sheet in a treatment solution that does not contain any Cr compound, F or nitrite nitrogen. In the method, a tin oxide layer that is not subjected to a cathodic electrocoating treatment yet and is arranged on a tin-coated steel sheet is thinned to a specified thickness or less by a cathodic electrocoating treatment in an aqueous solution containing sodium carbonate or sodium hydrogen carbonate or a aqueous sulfuric acid solution immersion treatment, and the tin oxide layer is subjected to a cathodic electrocoating treatment in an aqueous solution of an alkaline metal sulfate containing a zirconium compound having a specified composition. In this manner, a coating film is formed on the tin oxide layer at a specific adhered amount in terms of Zr content. Also disclosed are: a process for producing a chromium-free steel sheet for a container material, which has excellent adhesion to an organic resin film and excellent iron elution resistance after dent impact; and a steel sheet for a container material, which is produced by the process. | 01-31-2013 |
20130126906 | SILICON CARBIDE EPITAXIAL WAFER AND MANUFACTURING METHOD THEREFOR, SILICON CARBIDE BULK SUBSTRATE FOR EPITAXIAL GROWTH AND MANUFACTURING METHOD THEREFOR AND HEAT TREATMENT APPARATUS - A method is provided in order to manufacture a silicon carbide epitaxial wafer whose surface flatness is very good and has a very low density of carrot defects and triangular defects arising after epitaxial growth. The silicon carbide epitaxial wafer is manufactured by a first step of annealing a silicon carbide bulk substrate that is tilted less than 5 degrees from <0001> face, in a reducing gas atmosphere at a first temperature T | 05-23-2013 |