Patent application number | Description | Published |
20090148055 | IMAGE PROCESSING APPARATUS - An image processing apparatus for correcting a dislocation of image, pixels being arranged in a first and second directions perpendicular to each other, including: a section which breaks down a correction amount of the image of each pixel in the second direction into a first shift amount with a unit of a prescribed block, a second shift amount with a unit of the pixel, and a third shift amount less than the pixel size; a minimal shift section which shifts the image data by the third shift amount; a pixel unit shift section which shifts the image data by the second shift amount; and a block unit shift section which shifts the image data by the first shift amount, during compression and storage processing of the image data in the block unit, and executing arrangement of the image data after reading-out and expanding the compressed image data. | 06-11-2009 |
20100060949 | Pixel Interpolation Apparatus, Pixel Interpolation Method and Image Reading Apparatus - A pixel interpolation apparatus including an interpolation section for calculating an estimation density value of a missing pixel from densities of peripheral pixels of the missing pixel; and a correction section for calculating a first average value which being an average density value of pixels in a first two-dimensional area containing the missing pixel whose density value is assumed to be the estimation density value calculated by the interpolation section and a second average value which being an average density value of a second two-dimensional area, located in a peripheral of the missing pixel, not containing the missing pixel, and for correcting the estimation density value of the missing pixel in the first two-dimensional area so that a difference between the first average value and the second average value becomes zero or small. | 03-11-2010 |
20110064323 | IMAGE DECODING APPARATUS AND IMAGE DECODING METHOD - This invention realizes an image decoding apparatus and method capable of reducing block noise without difference in gradation being lost, wherein, an image is divided into a plurality of blocks containing a plurality of pixels and said pixels are encoded with label information corresponding to representative values which represent gradation of pixels in the block, and when the size in the dynamic range (distribution range of gradation) of a focused block is not less than a prescribed multiple times the size in the dynamic range in an adjacent block, a representative value, in the focused block, whose difference from the intermediate value of representative values of the adjacent block is not more than a threshold value, is assumed to be adjusted, and a variance is provided to the representative value in a decoding process. | 03-17-2011 |
20120076439 | IMAGE PROCESSING APPARATUS AND IMAGE PROCESSING METHOD - An image processing apparatus for scaling an image including: an operation position determining section for determining a pixel operation position, which is either a pixel inserting or deleting position, based on a scaling ratio; an inserting/deleting section for inserting/deleting a pixel to/from the pixel operation position determined by the operation position determining section; an error calculating section for calculating a density difference as an error between densities in a vicinity of the inserted/deleted pixel via the inserting/deleting section, before and after the insertion or deletion; and an error allocating section for allocating the error, calculated by the error calculating section, to the inserted pixel and pixels in a vicinity of the inserted or deleted pixel, so that a pixel value, after allocation, of a pixel of an allocation destination, falls within an allowable range estimated from a pixel value of a pixel near the pixel of allocation destination. | 03-29-2012 |
20150055146 | IMAGE VARIABLE MAGNIFICATION DEVICE AND IMAGE VARIABLE MAGNIFICATION METHOD - Disclosed is an image variable magnification device including: a first screen processing unit to carry out a first screen processing for the original image by applying a dither threshold on a position in a dither threshold matrix, which corresponds to a position obtained by adding the shift amount; a second screen processing unit to carry out a second screen processing for the original image by applying a dither threshold on a position in the dither threshold matrix, which corresponds to a position obtained by adding the shift amount and +1 or −1; and a variable magnification processing unit to shift each pixel in an image obtained by the first screen processing, in accordance with the shift amount, and to determine a gradation value of a pixel required to be inserted due to the shift, by adopting a processing result obtained by the second screen processing unit. | 02-26-2015 |
20160100078 | IMAGE DEFORMATION DEVICE - Disclosed is an image deformation device, including: a primary memory in which a positional correction amount data for each pixel, is stored; a reference memory having a smaller storing area than the primary memory; a transfer unit configured to transfer the positional correction amount data stored in the primary memory to the reference memory separately in multiple times; and a positional correction unit configured to carry out a positional correction process, wherein the transfer unit transfers the positional correction amount data according to the predetermined order and a progress of the positional correction process in the positional correction unit so that the positional correction amount data for one pixel has been already stored in the reference memory when the positional correction unit corrects the position of the one pixel. | 04-07-2016 |
Patent application number | Description | Published |
20100174472 | CONTROL APPARATUS FOR INTERNAL COMBUSTION ENGINE - A knock control apparatus includes: a knock sensor for detecting knock of an internal combustion engine; a signal processing section for calculating a knock intensity; and knock determination level setting sections: for calculating an average value of the knock intensity; for calculating, based on the average value, an overall variance of the knock intensity of an entirety of a frequency distribution, a higher variance of the knock intensity above the average value, and a lower variance of the knock intensity below the average value; for calculating a standard deviation of the knock intensity from the overall variance; for presetting a value allowing the frequency distribution of the knock intensity to be a predetermined confidence interval as a confidence coefficient; and for setting a sum of the average value and a value obtained by multiplying the standard deviation by the corrected confidence coefficient as a knock determination level. | 07-08-2010 |
20120073543 | KNOCK CONTROL APPARATUS FOR INTERNAL COMBUSTION ENGINE - A knock correction amount computation portion computes, on the basis of intensity of a knock in a case where the presence of an occurrence of the knock is determined, a knock correction amount by which to move a spark timing of the internal combustion engine to be on a retard side and returns the knock correction amount to be back on an advance side in a case where the absence of an occurrence of a knock is determined. In a case where a value of the knock correction amount to be on the retard side becomes equal to or exceeds a predetermined value, the knock correction amount computation portion limits and holds the knock correction amount at the predetermined value and returns the limited knock correction amount to be back on the advance side in a case where the absence of an occurrence of a knock is determined. | 03-29-2012 |
20120080008 | KNOCK CONTROL APPARATUS FOR INTERNAL COMBUSTION ENGINE - A knock control apparatus for internal combustion engine includes: a knock signal normalization unit that normalizes a knock signal extracted from an output signal of a knock sensor; a knock determination threshold setting unit that sets a knock determination threshold on the basis of the normalized knock signal; a knock intensity computation unit that calculates knock intensity on the basis of the normalized knock signal and the set knock determination threshold; a knock determination unit that determines a presence or absence of a knock on the basis of the calculated knock intensity; and a knock correction amount computation unit that calculates a knock correction amount to correct the calculated knock intensity in a case where an occurrence of a knock is determined. The knock signal normalization unit normalizes a standard deviation of the knock signal by dividing the knock signal by an average value of the knock signal. | 04-05-2012 |
20120192833 | INTERNAL COMBUSTION ENGINE CONTROL APPARATUS - An operation status value detection unit detects two or more operation status values indicating an operation status of an internal combustion engine. A filtering processing unit applies filtering processing to the detected operation status values, and an operation status value difference calculation unit calculates the difference between the filter-processed operation status value and the corresponding non-filter-processed operation status value so as to calculate two or more operation status value differences. An operation status value difference normalization unit normalizes the two or more operation status value differences, based on predetermined reference values for the two or more operation status values, so as to calculate two or more normalized operation status value differences; and a transient correction unit corrects a control amount for controlling output of the internal combustion engine, based thereon, when the engine is in a transient-operation mode. | 08-02-2012 |
20120192835 | KNOCK CONTROL DEVICE FOR ENGINE - A knock control device is provided in which erroneous knock detection can be reduced by suppressing sudden knock signal changes due to noise, without causing any increase in the number of matching steps, deterioration in the S/N in knock detection and decrease in detection performing frequency. In the knock control device, an open gain is applied to the detected signal only during a knock detection window set in advance by a knock window setting means. The window corresponds to a period in which vibration due to knock arises. During other periods, either a closed gain or an interpolated gain value is applied to the detected signal. | 08-02-2012 |
20130151128 | INTERNAL COMBUSTION ENGINE CONTROL APPARATUS - There are provided a combustion start determination unit that determines whether or not the inner-cylinder state of an internal combustion engine has changed from a non-combustion state to a combustion state; and a filter coefficient changing demand unit that outputs a filter coefficient changing demand until a predetermined filter coefficient changing period elapses from the time instant when the combustion start determination unit determines that the inner-cylinder state of the internal combustion engine has changed from the non-combustion state to the combustion state to the time instant. Based on the filter coefficient changing demand, at least one of a background level calculation unit and a standard deviation calculation unit changes the value of a filter coefficient utilized in a filtering operation to the one with which a filtering effect is weakened. | 06-13-2013 |
20130166183 | KNOCK CONTROL APPARATUS FOR INTERNAL COMBUSTION ENGINE - A knock control apparatus for an internal combustion engine includes a knock signal normalization portion that normalizes a knock signal using base statistics calculated on the basis of the knock signal. The knock signal normalization portion calculates base statistics on the basis of a last value and a current value of the knock signal and normalizes the knock signal using a base statistic interpolated according to an operating state. | 06-27-2013 |
20130192343 | KNOCK DETECTION DEVICE OF INTERNAL COMBUSTION ENGINE - In order to obtain a knock detection device of an internal combustion engine which satisfies two objects of following capability and separation from a continuous knock generation state, when a background level is calculated by ((current background level)=(filter coefficient)×(previous background level)+(1−filter coefficient)×(output signal from knock sensor)), updating quantity of the background level is limited by ((1−filter coefficient)×(value not lower than maximum value of output signal from knock sensor at time when knock is not generated)). | 08-01-2013 |
20130218443 | KNOCK CONTROL DEVICE OF INTERNAL COMBUSTION ENGINE - In a knock control device of an internal combustion engine equipped with a control unit which updates a background level based on an output signal from a knock sensor and detects the generation of a knock by comparing a variation of the background level with a knock determination value, a determination as to whether the knock is generated is performed by ((variation of first filter value of peak hold value)>((1−filter coefficient)/(1+filter coefficient)×(predetermined value larger than maximum value of variation of peak hold value in case where knock is not generated))). | 08-22-2013 |
20130245924 | INTERNAL COMBUSTION ENGINE KNOCK CONTROLLING APPARATUS - An internal combustion engine knock controlling apparatus is obtained that improves knock detection performance by making a correction period appropriate without performing matching, when calculating a transition correction factor for correcting a filter coefficient used for calculating a mean value and a standard deviation of a knock signal in a transitional operation state. A previous value of a filter coefficient for calculating a knock determination threshold value that has been corrected by a transition correction factor is used for a filter coefficient for calculating the transition correction factor so that the response characteristics are made equal between a filtering process used for calculating a transition correction factor for correcting a knock determination threshold value and a filtering process used for calculating the knock determination threshold value in a transition operation period. | 09-19-2013 |
20140041439 | KNOCK CONTROL APPARATUS FOR AN INTERNAL COMBUSTION ENGINE - A knock control apparatus for an internal combustion engine can remove regularly generated noise vibration in a simple and appropriate manner. The apparatus includes a knock sensor, a crank angle sensor, a vibration waveform detection unit that detects a vibration waveform of a knock natural frequency component, a vibration waveform average value calculation unit that calculates a vibration waveform average value corresponding to a noise vibration waveform by filtering the vibration waveform over a plurality of ignition cycles, a noise vibration waveform removal unit that removes the noise vibration waveform by subtracting the vibration waveform average value from the vibration waveform, a knock determination threshold value calculation unit that calculates a threshold value based on a peak value of the vibration waveform after removal of the noise vibration waveform, and a knock determination unit that determines whether a knock has occurred, by comparing the peak value with the threshold value. | 02-13-2014 |
20140116383 | CONTROL APPARATUS OF INTERNAL COMBUSTION ENGINE - A vibration waveform of a knock-specific frequency component of an internal combustion engine is calculated over a plurality of ignition cycles of the internal combustion engine according to an output of a knock sensor and an output of a crank angle sensor. An actual ignition timing is calculated by detecting a position corresponding to a crank angle at which a standard deviation of the vibration waveform exceeds a predetermined first determination level as a vibration position by combustion of the internal combustion engine. | 05-01-2014 |
20150114340 | INTERNAL COMBUSTION ENGINE CONTROL APPARATUS - When the starting timing of an NVO period exists at the delayed-angle side of the starting timing of a first NVO period, fuel injection into a cylinder is not started; when the starting timing of an NVO period exists between the starting timing of the first NVO period and the starting timing of the second NVO period, fuel injection into the cylinder is started at a given timing that includes the exhaust top death center; when the starting timing of an NVO period exists between the starting timing of the second NVO period and the starting timing of the third NVO period, fuel injection into the cylinder is started at a given timing that does not include the exhaust top death center, and that exists at both the advanced-angle and delayed-angle sides of the exhaust top death center. | 04-30-2015 |
20150136070 | CONTROL APPARATUS AND METHOD FOR INTERNAL COMBUSTION ENGINE - A control apparatus for an internal combustion engine is capable of switching a combustion mode between a spark ignition combustion mode for combusting a mixture formed in a combustion chamber with spark ignition and a compression ignition combustion mode for combusting the mixture with compression ignition. When the combustion mode is switched from the spark ignition combustion mode to the compression ignition combustion mode, in an internal EGR control for keeping a part of a burnt gas generated by the combustion remaining as an internal EGR in the combustion chamber, an internal EGR amount of the internal EGR is increased, an ignition timing is advanced, and a fuel injection amount is decreased so that an oxygen density contained in the internal EGR used to form the mixture increases. | 05-21-2015 |
Patent application number | Description | Published |
20100166663 | PROBE FOR A HAIR CELL, AND LABELLING METHOD FOR A HAIR CELL USING THE PROBE FOR A HAIR CELL - Provided are a novel probe for a hair cell for clearly identifying various conditions of a hair cell, and a labelling method for a hair cell using the probe for a hair cell, more particularly, a probe for a hair cell containing, as an active agent, at least one kind selected from staining compounds represented by one of the general formulae (I) and (II), and a labelling method for a hair cell using the probe for a hair cell. | 07-01-2010 |
20110182810 | CENTRAL NERVOUS SYSTEM LABELLING COMPOSITION FOR INTRANASAL ADMINISTRATION AND LABELLING METHOD AND SCREENING METHOD USING CENTRAL NERVOUS SYSTEM LABELLING COMPOSITION FOR INTRANASAL ADMINISTRATION - There is provided a central nervous system labelling composition for intranasal administration for the purpose of labelling the central nervous system from the olfactory epithelium by way of the olfactory bulb and by means of intranasal administration. Additionally, there is provided a method of non-invasively labelling the central nervous system by way of an administration route that entails little transferability to the entire body. Furthermore, there is provided a screening method using a central nervous system labelling composition for intranasal administration. A central nervous system labelling composition for intranasal administration is characterized by labelling the central nervous system from the olfactory epithelium by way of the olfactory bulb and by means of intranasal administration and by containing at least one compound expressed either by the general formula (1) or the general formula (2) shown below as effective component: | 07-28-2011 |
20110189096 | CENTRAL NERVOUS SYSTEM TISSUE-LABELING COMPOSITION, METHOD FOR LABELING CENTRAL NERVOUS SYSTEM TISSUE, AND SCREENING METHOD USING CENTRAL NERVOUS SYSTEM TISSUE-LABELING COMPOSITION - To provide a central nervous system tissue-labeling composition labeling the central nervous tissue system. Also, another object of the present invention is to provide a method for non-invasively labeling the central nervous tissue system. Further, another object of the present invention is to provide a screening method using the above central nervous system tissue-labeling composition. A central nervous system tissue-labeling composition containing, as an active ingredient, at least one of compounds represented by the general formula (1) or (7). | 08-04-2011 |
20110236310 | LABELING COMPOSITION FOR INTRAOCULAR TISSUE, LABELING METHOD OF INTRAOCULAR TISSUE, AND SCREENING METHOD - The invention provides a labeling composition for an intraocular tissue of a living individual, which specifically labels the intraocular tissue without need of an invasive operation such as exposure of an ocular tissue or injection of a staining agent into the ocular tissue or a nerve tissue linking to the ocular tissue, a method of noninvasively labeling an intraocular tissue of a living individual, and a screening method using the labeling composition for the intraocular tissues. The composition contains a compound capable of labeling at least a photoreceptor cell layer of a retina, wherein the compound is a staining compound having a particular structure as a partial structure thereof. | 09-29-2011 |
20110243850 | PROBE FOR A BIOLOGICAL SPECIMEN AND LABELLING METHOD AND SCREENING METHOD USING THE PROBE - Provided is a novel probe for a biological specimen for labelling by itself and clearly visualizing one of a specific cell and a specific cell organ in a living body, the probe having excellent spectral characteristics and exhibiting excellent storage stability. The probe for a biological specimen contains, as an active agent, at least one kind of compound represented by a general formula (I). | 10-06-2011 |
20120207683 | EVALUATION PROBE FOR CENTRAL NERVOUS SYSTEM PERMEABILITY, EVALUATION METHOD FOR CENTRAL NERVOUS SYSTEM PERMEABILITY, AND SCREENING METHOD USING AN EVALUATION PROBE FOR CENTRAL NERVOUS SYSTEM PERMEABILITY - Provided is an evaluation probe capable of optically evaluating permeability of a substance through a central nervous system tissue. Also provided is an evaluation method for permeability of a substance through a central nervous system tissue using an evaluation probe for central nervous system permeability. Also provided is a screening method using an evaluation probe for central nervous system permeability. The evaluation probe for central nervous system permeability includes, as an active ingredient, at least one kind of compound represented by the following general formula (1). | 08-16-2012 |
20130219529 | PROBE FOR A HAIR CELL, AND LABELLING METHOD FOR A HAIR CELL USING THE PROBE FOR A HAIR CELL - Provided are a novel probe for a hair cell for clearly identifying various conditions of a hair cell, and a labelling method for a hair cell using the probe for a hair cell, more particularly, a probe for a hair cell containing, as an active agent, at least one kind selected from staining compounds represented by one of the general formulae (I) and (II), and a labelling method for a hair cell using the probe for a hair cell. | 08-22-2013 |
20130280169 | CENTRAL NERVOUS SYSTEM TISSUE-LABELING COMPOSITION, METHOD FOR LABELING CENTRAL NERVOUS SYSTEM TISSUE, AND SCREENING METHOD USING CENTRAL NERVOUS SYSTEM TISSUE-LABELING COMPOSITION - To provide a central nervous system tissue-labeling composition labeling the central nervous tissue system. Also, another object of the present invention is to provide a method for non-invasively labeling the central nervous tissue system. Further, another object of the present invention is to provide a screening method using the above central nervous system tissue-labeling composition. A central nervous system tissue-labeling composition containing, as an active ingredient, at least one of compounds represented by the general formula (1) or (7). | 10-24-2013 |
20140112869 | CENTRAL NERVOUS SYSTEM LABELLING COMPOSITION FOR INTRANASAL ADMINISTRATION AND LABELLING METHOD AND SCREENING METHOD USING CENTRAL NERVOUS SYSTEM LABELLING COMPOSITION FOR INTRANASAL ADMINISTRATION - There is provided a central nervous system labelling composition for intranasal administration for the purpose of labelling the central nervous system from the olfactory epithelium by way of the olfactory bulb and by means of intranasal administration. Additionally, there is provided a method of non-invasively labelling the central nervous system by way of an administration route that entails little transferability to the entire body. Furthermore, there is provided a screening method using a central nervous system labelling composition for intranasal administration. A central nervous system labelling composition for intranasal administration is characterized by labelling the central nervous system from the olfactory epithelium by way of the olfactory bulb and by means of intranasal administration and by containing at least one compound expressed either by the general formula (1) or the general formula (2) shown below as effective component: | 04-24-2014 |
20150139908 | LABELING COMPOSITION FOR INTRAOCULAR TISSUE, LABELING METHOD OF INTRAOCULAR TISSUE, AND SCREENING METHOD - The invention provides a labeling composition for an intraocular tissue of a living individual, which specifically labels the intraocular tissue without need of an invasive operation such as exposure of an ocular tissue or injection of a staining agent into the ocular tissue or a nerve tissue linking to the ocular tissue, a method of noninvasively labeling an intraocular tissue of a living individual, and a screening method using the labeling composition for the intraocular tissues. The composition contains a compound capable of labeling at least a photoreceptor cell layer of a retina, wherein the compound is a staining compound having a particular structure as a partial structure thereof. | 05-21-2015 |
20150157745 | PROBE FOR A BIOLOGICAL SPECIMEN AND LABELLING METHOD AND SCREENING METHOD USING THE PROBE - Provided is a novel probe for a biological specimen for labelling by itself and clearly visualizing one of a specific cell and a specific cell organ in a living body, the probe having excellent spectral characteristics and exhibiting excellent storage stability. The probe for a biological specimen contains, as an active agent, at least one kind of compound represented by a general formula (I). | 06-11-2015 |
20150182518 | CANCER CELL INHIBITORY DRUG AND CANCER STEM-CELL DETECTION PROBE - An object of the present invention is to provide a cancer cell inhibitory drug, particularly a cancer stem-cell inhibitory drug, or a cancer stem-cell detection probe. The present invention provides a cancer cell inhibitory drug comprising at least one compound represented by general formula (1) as an active ingredient. | 07-02-2015 |
20150274715 | CANCER CELL INHIBITORY DRUG AND CANCER STEM-CELL DETECTION PROBE - An object of the present invention is to provide a cancer cell inhibitory drug, particularly a cancer stem-cell inhibitory drug, or a cancer stem-cell detection probe. A cancer cell inhibitory drug containing at least a compound represented by general formula (1). | 10-01-2015 |
Patent application number | Description | Published |
20090231520 | LAMINATED POLARIZING FILM, PHASE RETARDATION FILM, AND LIQUID CRYSTAL DISPLAY DEVICE - A laminated polarizing film that is capable of enhancing a viewing angle of a liquid crystal display device, particularly in an IPS mode, is provided. The laminated polarizing film can be obtained by adhering a phase retardation film and a polarizing film by a roll-to-roll process. Specifically, the laminated polarizing film contains a negative substantially uniaxial optical film containing a thermoplastic polymer having a negative molecular polarizability anisotropy, a positive optical film containing a thermoplastic polymer having a positive molecular polarizability anisotropy, and a polarizing film, that are laminated at least in this order, a slow axis within a film plane of the negative substantially uniaxial optical film and a slow axis within a film plane of the positive optical film are substantially in parallel to each other, and each are substantially perpendicular to an absorption axis of the polarizing film, a positional relationship between a principal orientation direction of polymer main chains of the negative substantially uniaxial optical film and the absorption axis of the polarizing film is substantially in parallel, and a positional relationship between a principal orientation direction of polymer main chains of the positive optical film and the absorption axis of the polarizing film is substantially perpendicular. | 09-17-2009 |
20090237789 | TRANSPARENT SHEET - The transparent sheet of the invention is used in a display device which comprises at least one transparent body and a retardation film, where reflection of display light from the display light source onto the transparent sheet forms an image of the display light in the forward field of vision of the observer and renders it visible to the observer, the retardation film being positioned with specified conditions. It is thereby possible to obtain a display device with high display quality and minimal double images. The display device used may be, for example, a HUD for display of information in the forward field of vision of a vehicle, ship or the like. | 09-24-2009 |
20090252897 | POLARIZING PLATE AND METHOD FOR PRODUCING THE SAME - The present invention is to provide a polarizing plate having a retardation function while having excellent environmental resistance. The invention is concerned with a polarizing plate including a polarizer having, on at least one surface thereof, a protective film having a function as a retardation film via an adhesive layer, wherein the adhesive layer is formed of an adhesive containing a polyurethane; and the protective film is composed of a polycarbonate based resin or an amorphous polyolefin resin having a glass transition temperature in the range of from 100° C. to 180° C., which is a copolymer containing an ethylene unit represented by the following formula (E) and a cyclic olefin unit represented by the following formula (F): | 10-08-2009 |
20100283949 | RETARDATION FILM, LAMINATED POLARIZING FILM, AND LIQUID CRYSTAL DISPLAY - The present invention provides a retardation film which can remarkably improve the controllability of retardation, and can also sufficiently control the wavelength dependency of retardation. The retardation film of the present invention can achieve a widening of the viewing angle at a high degree, when it is applied to a liquid crystal display device. Further, the present invention provides a laminated polarizing which comprises the retardation film and enables widening the viewing angle. Furthermore, the present invention provides a liquid crystal display device having high performance, especially a widened viewing angle. The retardation film of the present invention comprises a structural body which simultaneously has form birefringence and molecular-orientation birefringence. Specifically, the retardation film comprises a periodic structure ( | 11-11-2010 |
20130178567 | STEREOCOMPLEX POLYLACTIC ACID FILM AND RESIN COMPOSITION - A stereocomplex polylactic acid resin composition containing an amide compound represented by the following general formula (1) and a film composed thereof. A stereocomplex polylactic acid excellent in transparency and a resin composition can be provided. | 07-11-2013 |
20140030499 | ORIENTED LAMINATED FILM - Provided is an oriented laminated film, characterized in that the film is obtained by alternately laminating Layer A and Layer B such that reflection is generated by optical interference due to a difference in refractive indices of Layer A and Layer B, wherein Layer A includes an aromatic polyester containing trimethylene-2,6-naphthalenedicarboxylate as a main repeating unit and has a layer thickness in a range of 0.05 to 0.5 μm and Layer B includes a polylactic acid composition and has a layer thickness in a range of 0.05 to 0.5 μm, and a reflectivity curve thereof for light in a wavelength range of 400 to 1,600 nm has a reflection peak having a maximum reflectivity which is at least 20% higher than the reflectivity baseline. The present invention can provide a laminated film having high reflectivity with improved thickness variation associated with stretching treatment and improved hue irregularity attributable to a state of lamination. | 01-30-2014 |
Patent application number | Description | Published |
20120153275 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - To manufacture a transistor whose threshold voltage is controlled without using a backgate electrode, a circuit for controlling the threshold voltage, and an impurity introduction method. To manufacture a semiconductor device having favorable electrical characteristics, high reliability, and low power consumption using the transistor. A gate electrode including a tungsten oxide film whose composition is controlled is used. The composition or the like is adjusted by a film formation method of the tungsten oxide film, whereby the work function can be controlled. By using the tungsten oxide film whose work function is controlled as part of the gate electrode, the threshold of the transistor can be controlled. Using the transistor whose threshold voltage is controlled, a semiconductor device having favorable electrical characteristics, high reliability, and low power consumption can be manufactured. | 06-21-2012 |
20120231580 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - In a manufacturing process of a transistor including an oxide semiconductor film, oxygen doping treatment is performed on the oxide semiconductor film, and then heat treatment is performed on the oxide semiconductor film and an aluminum oxide film provided over the oxide semiconductor film. Consequently, an oxide semiconductor film which includes a region containing more oxygen than a stoichiometric composition is formed. The transistor formed using the oxide semiconductor film can have high reliability because the amount of change in the threshold voltage of the transistor by a bias-temperature stress test (BT test) is reduced. | 09-13-2012 |
20120231581 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - In a process of manufacturing a transistor including an oxide semiconductor layer, an amorphous oxide semiconductor layer which includes a region containing excess oxygen as compared to a stoichiometric composition ratio of an oxide semiconductor in a crystalline state is formed over a silicon oxide film, an aluminum oxide film is formed over the amorphous oxide semiconductor layer, and then heat treatment is performed so that at least part of the amorphous oxide semiconductor layer is crystallized and an oxide semiconductor layer which includes a crystal having a c-axis substantially perpendicular to a surface of the oxide semiconductor layer is formed. | 09-13-2012 |
20120252173 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - The amount of water and hydrogen contained in an oxide semiconductor film is reduced, and oxygen is supplied sufficiently from a base film to the oxide semiconductor film in order to reduce oxygen deficiencies. A stacked base film is formed, a first heat treatment is performed, an oxide semiconductor film is formed over and in contact with the stacked base film, and a second heat treatment is performed. In the stacked base film, a first base film and a second base film are stacked in this order. The first base film is an insulating oxide film from which oxygen is released by heating. The second base film is an insulating metal oxide film. An oxygen diffusion coefficient of the second base film is smaller than that of the first base film. | 10-04-2012 |
20120258575 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - To provide a highly reliable semiconductor device manufactured by giving stable electric characteristics to a semiconductor device including an oxide semiconductor. In a manufacturing process of a transistor, an oxide semiconductor layer, a source electrode layer, a drain electrode layer, a gate insulating film, a gate electrode layer, and an aluminum oxide film are formed in this order, and then heat treatment is performed on the oxide semiconductor layer and the aluminum oxide film, whereby an oxide semiconductor layer from which an impurity containing a hydrogen atom is removed and which includes a region containing oxygen more than the stoichiometric proportion is formed. In addition, when the aluminum oxide film is formed, entry and diffusion of water or hydrogen into the oxide semiconductor layer from the air due to heat treatment in a manufacturing process of a semiconductor device or an electronic appliance including the transistor can be prevented. | 10-11-2012 |
20120276694 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A semiconductor device using an oxide semiconductor is provided with stable electric characteristics to improve the reliability. In a manufacturing process of a transistor including an oxide semiconductor film, an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a first crystalline oxide semiconductor film) is formed; oxygen is added to the oxide semiconductor film to amorphize at least part of the oxide semiconductor film, so that an amorphous oxide semiconductor film containing an excess of oxygen is formed; an aluminum oxide film is formed over the amorphous oxide semiconductor film; and heat treatment is performed thereon to crystallize at least part of the amorphous oxide semiconductor film, so that an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a second crystalline oxide semiconductor film) is formed. | 11-01-2012 |
20120280234 | SEMICONDUCTOR DEVICE - A highly reliable semiconductor device which is formed using an oxide semiconductor and has stable electric characteristics is provided. A semiconductor device which includes an amorphous oxide semiconductor layer including a region containing oxygen in a proportion higher than that in the stoichiometric composition, and an aluminum oxide film provided over the amorphous oxide semiconductor layer is provided. The amorphous oxide semiconductor layer is formed as follows: oxygen implantation treatment is performed on a crystalline or amorphous oxide semiconductor layer which has been subjected to dehydration or dehydrogenation treatment, and then thermal treatment is performed on the oxide semiconductor layer provided with an aluminum oxide film at a temperature lower than or equal to 450° C. | 11-08-2012 |
20120295397 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - Stable electrical characteristics and high reliability are provided to a semiconductor device including an oxide semiconductor. In a process of manufacturing a transistor including an oxide semiconductor film, an amorphous oxide semiconductor film is formed, and oxygen is added to the amorphous oxide semiconductor film, so that an amorphous oxide semiconductor film containing excess oxygen is formed. Then, an aluminum oxide film is formed over the amorphous oxide semiconductor film, and heat treatment is performed thereon to crystallize at least part of the amorphous oxide semiconductor film, so that a crystalline oxide semiconductor film is formed. | 11-22-2012 |
20130099237 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - Hydrogen concentration and oxygen vacancies in an oxide semiconductor film are reduced. Reliability of a semiconductor device which includes a transistor using an oxide semiconductor film is improved. One embodiment of the present invention is a semiconductor device which includes a base insulating film; an oxide semiconductor film formed over the base insulating film; a gate insulating film formed over the oxide semiconductor film; and a gate electrode overlapping with the oxide semiconductor film with the gate insulating film provided therebetween. The base insulating film shows a signal at a g value of 2.01 by electron spin resonance. The oxide semiconductor film does not show a signal at a g value of 1.93 by electron spin resonance. | 04-25-2013 |
20130126861 | INSULATING FILM, FORMATION METHOD THEREOF, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF - An amorphous region with low density is formed in an oxide insulating film containing zirconium. The amount of oxygen released from such an oxide insulating film containing zirconium by heating is large and a temperature at which oxygen is released is higher in the oxide insulating film than in a conventional oxide film (e.g., a silicon oxide film). When the insulating film is formed using a sputtering target containing zirconium in an oxygen atmosphere, the temperature of a surface on which the insulating film is formed may be controlled to be lower than a temperature at which a film to be formed starts to crystallize. | 05-23-2013 |
20140175435 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device having a reduced amount of oxygen vacancy in a channel formation region of an oxide semiconductor is provided. Further, a semiconductor device which includes an oxide semiconductor and has improved electric characteristics is provided. Furthermore, a methods for manufacturing the semiconductor device is provided. An oxide semiconductor film is formed; a conductive film is formed over the oxide semiconductor film at the same time as forming a low-resistance region between the oxide semiconductor film and the conductive film; the conductive film is processed to form a source electrode and a drain electrode; and oxygen is added to the low-resistance region between the source electrode and the drain electrode, so that a channel formation region having a higher resistance than the low-resistance region is formed and a first low-resistance region and a second low-resistance region between which the channel formation region is positioned are formed. | 06-26-2014 |
20140186998 | SEMICONDUCTOR DEVICE - A highly reliable semiconductor device which is formed using an oxide semiconductor and has stable electric characteristics is provided. A semiconductor device which includes an amorphous oxide semiconductor layer including a region containing oxygen in a proportion higher than that in the stoichiometric composition, and an aluminum oxide film provided over the amorphous oxide semiconductor layer is provided. The amorphous oxide semiconductor layer is formed as follows: oxygen implantation treatment is performed on a crystalline or amorphous oxide semiconductor layer which has been subjected to dehydration or dehydrogenation treatment, and then thermal treatment is performed on the oxide semiconductor layer provided with an aluminum oxide film at a temperature lower than or equal to 450° C. | 07-03-2014 |
20140370657 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - In a manufacturing process of a transistor including an oxide semiconductor film, oxygen doping treatment is performed on the oxide semiconductor film, and then heat treatment is performed on the oxide semiconductor film and an aluminum oxide film provided over the oxide semiconductor film. Consequently, an oxide semiconductor film which includes a region containing more oxygen than a stoichiometric composition is formed. The transistor formed using the oxide semiconductor film can have high reliability because the amount of change in the threshold voltage of the transistor by a bias-temperature stress test (BT test) is reduced. | 12-18-2014 |
20150084050 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - Hydrogen concentration and oxygen vacancies in an oxide semiconductor film are reduced. Reliability of a semiconductor device which includes a transistor using an oxide semiconductor film is improved. One embodiment of the present invention is a semiconductor device which includes a base insulating film; an oxide semiconductor film formed over the base insulating film; a gate insulating film formed over the oxide semiconductor film; and a gate electrode overlapping with the oxide semiconductor film with the gate insulating film provided therebetween. The base insulating film shows a signal at a g value of 2.01 by electron spin resonance. The oxide semiconductor film does not show a signal at a g value of 1.93 by electron spin resonance. | 03-26-2015 |
20150108472 | SEMICONDUCTOR DEVICE - A transistor having high field-effect mobility is provided. A transistor having stable electrical characteristics is provided. A transistor having small current in an off state (in a non-conductive state) is provided. A semiconductor device including such a transistor is provided. A first electrode is formed over a substrate, a first insulating layer is formed adjacent to a side surface of the first electrode, and a second insulating layer is formed to cover the first insulating layer and be in contact with at least part of a surface of the first electrode. The surface of the first electrode is formed of a conductive material that does not easily transmit an impurity element. The second insulating layer is formed of an insulating material that does not easily transmit an impurity element. An oxide semiconductor layer is formed over the first electrode with a third insulating layer provided therebetween. | 04-23-2015 |
20150162421 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - The amount of water and hydrogen contained in an oxide semiconductor film is reduced, and oxygen is supplied sufficiently from a base film to the oxide semiconductor film in order to reduce oxygen deficiencies. A stacked base film is formed, a first heat treatment is performed, an oxide semiconductor film is formed over and in contact with the stacked base film, and a second heat treatment is performed. In the stacked base film, a first base film and a second base film are stacked in this order. The first base film is an insulating oxide film from which oxygen is released by heating. The second base film is an insulating metal oxide film. An oxygen diffusion coefficient of the second base film is smaller than that of the first base film. | 06-11-2015 |
20150179774 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - The semiconductor device is manufactured by the following method. A first oxide semiconductor film is formed over a first gate electrode and a first insulating film, oxygen is added to the first oxide semiconductor film, and then a second oxide semiconductor film is formed over the first oxide semiconductor film. Then, heat treatment is performed. Next, part of the first insulating film, part of the first oxide semiconductor film, and part of the second oxide semiconductor film are etched to form a first gate insulating film having a projection. Next, a pair of electrodes is formed over the second oxide semiconductor film, and a third oxide semiconductor film is formed over the second oxide semiconductor film and the pair of electrodes. Then, a second gate insulating film is formed over the third oxide semiconductor film, and a second gate electrode is formed over the second gate insulating film. | 06-25-2015 |
20150179803 | SEMICONDUCTOR DEVICE - To provide a transistor having a high on-state current. A semiconductor device includes a first insulator containing excess oxygen, a first oxide semiconductor over the first insulator, a second oxide semiconductor over the first oxide semiconductor, a first conductor and a second conductor which are over the second oxide semiconductor and are separated from each other, a third oxide semiconductor in contact with side surfaces of the first oxide semiconductor, a top surface and side surfaces of the second oxide semiconductor, a top surface of the first conductor, and a top surface of the second conductor, a second insulator over the third oxide semiconductor, and a third conductor facing a top surface and side surfaces of the second oxide semiconductor with the second insulator and the third oxide semiconductor therebetween. The first oxide semiconductor has a higher oxygen-transmitting property than the third oxide semiconductor. | 06-25-2015 |
20150179810 | SEMICONDUCTOR DEVICE - A change in electrical characteristics is suppressed and reliability in a semiconductor device using a transistor including an oxide semiconductor is improved. The semiconductor device includes an oxide semiconductor film over an insulating surface, an antioxidant film over the insulating surface and the oxide semiconductor film, a pair of electrodes in contact with the antioxidant film, a gate insulating film over the pair of electrodes, and a gate electrode which is over the gate insulating film and overlaps with the oxide semiconductor film. In the antioxidant film, a width of a region overlapping with the pair of electrodes is longer than a width of a region not overlapping with the pair of electrodes. | 06-25-2015 |
20150187575 | MANUFACTURING METHOD OF OXIDE SEMICONDUCTOR - A method of forming an oxide semiconductor includes a step of depositing an oxide semiconductor layer over a substrate by using a sputtering apparatus in which in a target containing indium, an element M (aluminum, gallium, yttrium, or tin), zinc, and oxygen, the substrate which faces a surface of the target, and a magnet unit comprising a first magnet and a second magnet on a rear surface side of the target are provided. In the method, deposition is performed under a condition that a maximum intensity of a horizontal magnetic field is greater than or equal to 350 G and less than or equal to 2000 G in a plane where a vertical distance toward the substrate from a surface of the magnet unit is 10 mm. | 07-02-2015 |
20150187952 | SEMICONDUCTOR DEVICE - To provide a transistor with stable electrical characteristics, a transistor with a low off-state current, a transistor with a high on-state current, a semiconductor device including the transistor, or a durable semiconductor device. The semiconductor device includes a first transistor using silicon, an aluminum oxide film over the first transistor, and a second transistor using an oxide semiconductor over the aluminum oxide film. The oxide semiconductor has a lower hydrogen concentration than silicon. | 07-02-2015 |
20150243738 | SEMICONDUCTOR FILM, TRANSISTOR, SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND ELECTRONIC APPLIANCE - Favorable electrical characteristics are given to a semiconductor device. Furthermore, a semiconductor device having high reliability is provided. One embodiment of the present invention is an oxide semiconductor film having a plurality of electron diffraction patterns which are observed in such a manner that a surface where the oxide semiconductor film is formed is irradiated with an electron beam having a probe diameter whose half-width is 1 nm. The plurality of electron diffraction patterns include 50 or more electron diffraction patterns which are observed in different areas, the sum of the percentage of first electron diffraction patterns and the percentage of second electron diffraction patterns accounts for 100%, the first electron diffraction patterns account for 90% or more, the first electron diffraction pattern includes observed points which indicates that a c-axis is oriented in a direction substantially perpendicular to the surface where the oxide semiconductor film is formed. | 08-27-2015 |
20150318359 | SEMICONDUCTOR FILM, SEMICONDUCTOR DEVICE, DISPLAY DEVICE, MODULE, AND ELECTRONIC DEVICE - A semiconductor device with favorable electrical characteristics is provided. In an oxide semiconductor film, a plurality of electron diffraction patterns are observed in such a manner that a surface over which the oxide semiconductor film is formed is irradiated with an electron beam having a probe diameter whose half-width is 1 nm while the position of the film and the position of the electron beam are relatively moved. The electron diffraction patterns include 50 or more electron diffraction patterns observed in different areas. The sum of the percentage of first electron diffraction patterns and the percentage of second electron diffraction patterns accounts for 100%. The first electron diffraction patterns account for 50% or more. The first electron diffraction pattern includes observation points that are not symmetry or observation points disposed in a circular pattern. The second electron diffraction pattern includes observation points corresponding to the vertices of a hexagon. | 11-05-2015 |
20160064505 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - To manufacture a transistor whose threshold voltage is controlled without using a backgate electrode, a circuit for controlling the threshold voltage, and an impurity introduction method. To manufacture a semiconductor device having favorable electrical characteristics, high reliability, and low power consumption using the transistor. A gate electrode including a tungsten oxide film whose composition is controlled is used. The composition or the like is adjusted by a film formation method of the tungsten oxide film, whereby the work function can be controlled. By using the tungsten oxide film whose work function is controlled as part of the gate electrode, the threshold of the transistor can be controlled. Using the transistor whose threshold voltage is controlled, a semiconductor device having favorable electrical characteristics, high reliability, and low power consumption can be manufactured. | 03-03-2016 |