| Patent application number | Description | Published |
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| 20130094254 | METHODS AND POWER CONTROLLERS FOR PRIMARY SIDE CONTROL - Power controllers and related primary-side control methods are disclosed. A disclosed power controller has a comparator and an ON-triggering controller. The comparator compares a feedback voltage with an over-shot reference voltage. Based on an inductance-coupling effect, the feedback voltage represents a secondary-side voltage of a secondary winding. Coupled to the comparator, the ON-triggering controller operates a power switch at about a first switching frequency when the feedback voltage is lower than the over-shot reference voltage. The ON-triggering controller operates the power switch at about a second switching frequency when the feedback voltage exceeds the over-shot reference voltage. The second switching frequency is less than the first switching frequency. | 04-18-2013 |
| 20130301303 | POWER CONTROLLERS AND CONTROL METHODS - Disclosed include power controllers and related control methods. A disclosed power controller has a pulse generator, a sample/hold device, a comparator, and a switch controller. The pulse generator provides an enable signal, defining an enable time. The comparator has two inputs capable of being coupled to a reference signal and a feedback signal, respectively, and an output coupled to a compensation capacitor. When enabled by the enable signal, the comparator charges/discharges the compensation capacitor. The switch controller controls a power switch according to a compensation voltage of the compensation capacitor. A feedback voltage of the feedback signal is able to correspond to an output voltage of the power supply. | 11-14-2013 |
| 20140140108 | CONTROLLER FOR GENERATING JITTERS IN A CONSTANT CURRENT MODE OF A POWER CONVERTER AND METHOD THEREOF - A controller for generating jitters in a constant current mode of a power converter includes a current pin, an auxiliary pin, a constant current control unit, and a control signal generation unit. The current pin is used for receiving a primary side voltage determined according to a resistor and a primary side current flowing through the power converter. The auxiliary pin is used for receiving a voltage corresponding to an auxiliary winding of the power converter. The constant current control unit is used for generating an adjustment signal according to the primary side voltage, a discharge time corresponding to the voltage, and a reference voltage. The reference voltage has a predetermined range jitter voltage. The control signal generation unit is used for adjusting a period of a gate control signal according to the adjustment signal. | 05-22-2014 |
| 20150029763 | CONTROLLER FOR GENERATING JITTERS IN A QUASI RESONANT MODE AND METHOD FOR GENERATING JITTERS IN A QUASI RESONANT MODE - A controller for generating jitters in a quasi resonant mode includes a feedback pin, a voltage generation unit, a pulse generator, and a comparator. The feedback pin is used for receiving a feedback voltage from a secondary side of a power converter. The voltage generation unit is used for generating a first voltage according to the feedback voltage and a pulse. The pulse generator is used for generating the pulse when a control signal controlling a power switch of a primary side of the power converter is enabled. The comparator is used for controlling enabling and disabling of a switching signal according to the first voltage and a variable reference voltage. The variable reference voltage is monotonously swung within a predetermined range according to a digital signal. | 01-29-2015 |
| 20150100807 | CONTROLLING METHOD, POWER CONTROLLER, AND POWER CONTROLLING METHOD - A power supply has an inductor and determines loading state of the power supply according to a compensation signal. When the loading state is determined to be a light loading state or a no-loading state, a switch is operated at a low operating frequency. When the loading state is determined to be a heavy loading state, the switch is operated at a high operating frequency. If the compensation signal exceeds a critical value, it is determined that the loading state is an overloaded state. When the overloaded state continues past a tolerable duration, the switch is turned off. The tolerable duration is determined by an external capacitor and is independent of the operating frequency. | 04-09-2015 |
| 20160087534 | METHODS AND POWER CONTROLLERS FOR PRIMARY SIDE CONTROL - Power controllers and related primary-side control methods are disclosed. A disclosed power controller has a comparator and an ON-triggering controller. The comparator compares a feedback voltage with an over-shot reference voltage. Based on an inductance-coupling effect, the feedback voltage represents a secondary-side voltage of a secondary winding. Coupled to the comparator, the ON-triggering controller operates a power switch at about a first switching frequency when the feedback voltage is lower than the over-shot reference voltage. The ON-triggering controller operates the power switch at about a second switching frequency when the feedback voltage exceeds the over-shot reference voltage. The second switching frequency is less than the first switching frequency. | 03-24-2016 |
| Patent application number | Description | Published |
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| 20130134464 | LIGHT EMITTING DIODE DEVICE AND FLIP-CHIP PACKAGED LIGHT EMITTING DIODE DEVICE - The present invention relates to a light emitting diode (LED) and a flip-chip packaged LED device. The present invention provides an LED device. The LED device is flipped on and connected electrically with a packaging substrate and thus forming the flip-chip packaged LED device. The LED device mainly has an Ohmic-contact layer and a planarized buffer layer between a second-type doping layer and a reflection layer. The Ohmic-contact layer improves the Ohmic-contact characteristics between the second-type doping layer and the reflection layer without affecting the light emitting efficiency of the LED device and the flip-chip packaged LED device. The planarized buffer layer id disposed between the Ohmic-contact layer and the reflection layer for smoothening the Ohmic-contact layer and hence enabling the reflection layer to adhere to the planarized buffer layer smoothly. Thereby, the reflection layer can have the effect of mirror reflection and the scattering phenomenon on the reflected light can be reduced as well. | 05-30-2013 |
| 20130146915 | LIGHT EMITTING DIODE AND FLIP-CHIP LIGHT EMITTING DIODE PACKAGE - A light emitting diode including a first doped layer, a light emitting layer, a second doped layer and a substrate is provided. A plurality of first grooves penetrate through the second doped layer and the light emitting layer. Thus, a partial surface of the first doped layer is exposed. At least one of the plurality of first grooves extends to edges of the second dope layer and the light emitting layer. An insulating layer is disposed over a part of second doped layer and extends to sidewalls of the first grooves. A first contact is set in the first grooves and electrically connected to the first doped layer. A second contact is set on the second doped layer and electrically connected to the second doped layer. By the first grooves, the first contact can be electrically connected to the first doped layer for improving current spreading. | 06-13-2013 |
| 20130221394 | LIGHT EMITTING DIODE AND FLIP-CHIP LIGHT EMITTING DIODE PACKAGE - A light emitting diode (LED) is revealed. The LED includes a substrate, a first-type-doped layer, a light emitting layer, a second-type-doped layer, a plurality of first grooves, a second groove, an insulation layer, a first contact, and a second contact. The LED features that the second groove is connected to one end of each first groove and penetrates the second-type-doped layer and the light emitting layer to expose a part of the first-type-doped layer. The contact area between the first contact and the first-type-doped layer is increased. Therefore, the LED is worked at high current densities without heat accumulation. Moreover, the light emitting area is not reduced and the light emitting efficiency is not affected. The LED is flipped on a package substrate to form a flip-chip LED package. | 08-29-2013 |
| 20130277641 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND FLIP CHIP PACKAGE DEVICE - A semiconductor light emitting device including a first type doped semiconductor layer, a light emitting layer, a second type doped semiconductor layer, and a reflection layer is provided. The first type doped semiconductor layer has a mesa portion and a depression portion. The light emitting layer is disposed on the mesa portion and has a first surface, a second surface and a first side surface connecting the first surface with the second surface. The second type doped semiconductor layer is disposed on the light emitting layer and has a third surface, a fourth surface and a second side surface connecting the third surface with the fourth surface. Observing from a viewing direction parallel to the light emitting layer, the reflection layer covers at least part of the first side surface and at least part of the second side surface. A flip chip package device is also provided. | 10-24-2013 |
| 20140103367 | METHOD OF FORMING LIGHT EMITTING DIODE DIES, LIGHT EMITTING DIODE WAFER AND LIGHT EMITTING DIODE DIE - A method of forming light emitting diode dies includes: forming an epitaxial layered structure that defines light emitting units on a front surface of a substrate wafer; forming a photoresist layer over a back surface of the substrate wafer; aligning the substrate wafer and patterning the photoresist layer so as to form openings in the photoresist layer, each of the openings having an area less than a projected area of the respective light emitting unit; forming a solder layer on the photoresist layer such that the solder layer fills the openings in the photoresist layer; removing the photoresist layer and a portion of the solder layer that covers the photoresist layer from the substrate wafer; and dicing the substrate wafer. | 04-17-2014 |
| 20140159082 | LIGHT-EMITTING DEVICE - A light-emitting device including a substrate, a photoelectric structure and a coarse structure is provided. The substrate has an upper surface and a lower surface opposite to each other, and an annular side surface connecting the upper surface and the lower surface. The photoelectric structure is disposed on the upper surface of the substrate. The coarse structure is formed on the annular side surface of the substrate. A ratio of a thickness of the substrate and a thickness of the coarse structure is greater than or equal to 1 and less than or equal to 20. Therefore, the overall light-emitting efficiency of the light-emitting device may be improved. | 06-12-2014 |
| 20140167080 | LIGHT EMITTING DEVICE - A light emitting device includes a substrate, light emitting units, an insulation layer, a current distribution layer and a reflective layer. The substrate has an upper surface. The light emitting units are disposed on the upper surface and include at least one first light emitting diode (LED) and at least one second LED. A first side wall of the first LED is adjacent to a second side wall of the second LED so as to define a concave portion exposing a portion of the upper surface. The insulation layer at least covers the first side wall and the second side wall. The current distribution layer covers the concave portion and at least covers a portion of the second LED. The reflective layer covers the current distribution layer and is electrically connected to the first LED and the second LED. | 06-19-2014 |
| 20150021639 | LIGHT EMITTING DIODE STRUCTURE - A light emitting diode structure including a substrate, a semiconductor epitaxial layer and a reflective conductive structure layer is provided. The semiconductor epitaxial layer is disposed on the substrate and exposes a portion of the substrate. The reflective conductive structure layer covers a part of the semiconductor epitaxial layer and the portion of the substrate exposed by the semiconductor epitaxial layer. | 01-22-2015 |
| 20150102377 | FLIP CHIP LIGHT EMITTING DIODE PACKAGE STRUCTURE - A flip chip light emitting diode package structure includes a package carrier, a light guiding unit and at least one light emitting unit. The light guiding unit and the light emitting unit are disposed on the package carrier, and the light emitting unit is located between the light guiding unit and the package carrier. A horizontal projection area of the light guiding unit is greater than that of the light emitting unit. The light emitting unit is adapted to emit a light beam, and the light beam enters the light guiding unit and emits from an upper surface of the light guiding unit away from the light emitting unit. | 04-16-2015 |
| 20150102378 | LIGHT EMITTING DIODE PACKAGE STRUCTURE - A light-emitting diode package structure includes a package carrier, a light guiding component and a light emitting unit. The light guiding component is disposed on the package carrier. The light emitting unit is disposed on an upper surface of light guiding component relatively distant from the package carrier. A horizontal projection area of the light guiding component is greater than that of the light emitting unit. The light emitting unit is adapted to emit a light beam, and a portion of the light beam enters the light guiding component and emits from the upper surface of the light guiding component. An included angle existing between the light beam and a normal direction of the upper surface ranges from 0 degree to 75 degrees. | 04-16-2015 |
| 20150102379 | LIGHT EMITTING DIODE STRUCTURE - A light emitting diode structure includes a substrate and a light emitting unit. The substrate has a protrusion portion and a light guiding portion. The protrusion portion and the light guiding portion have a seamless connection therebetween, and a horizontal projection area of the protrusion portion is smaller than that of the light guiding portion. The light emitting unit is disposed on the protrusion portion of the substrate. The light emitting unit is adapted to emit a light beam, and a portion of the light beam enters the light guiding portion from the protrusion portion and emits from an upper surface of the light guiding portion uncovered by the protrusion portion. | 04-16-2015 |
| 20150103556 | PACKAGE CARRIER - A package carrier is suitable for carrying at least one light emitting unit. The package carrier includes an annular shell and a transparent light guiding stage. The annular shell has a cavity. The transparent light guiding stage is disposed in the cavity of the annular shell. The light emitting unit is adapted to be disposed on the transparent light guiding stage, and a horizontal projection area of the transparent light guiding stage is greater than that of the light emitting unit. The light emitting unit emits a light beam to enter the transparent light guiding stage, and the light beam emits from a surface of the transparent light guiding stage relatively distant from the cavity. | 04-16-2015 |
| 20150179888 | SEMICONDUCTOR LIGHT EMITTING STRUCTURE AND SEMICONDUCTOR PACKAGE STRUCTURE - A semiconductor light emitting structure includes an epitaxial structure, an N-type electrode pad, a P-type electrode pad and an insulation layer. The N-type electrode pad and the P-type electrode pad are disposed on the epitaxial structure apart, wherein the P-type electrode pad has a first upper surface. The insulation layer is disposed on the epitaxial structure and located between the N-type electrode pad and the P-type electrode pad, wherein the insulation layer has a second upper surface. The first upper surface of the P-type electrode pad and the second upper surface of the insulation layer are coplanar. | 06-25-2015 |
| 20150179896 | PACKAGE STRUCTURE OF LIGHT EMITTING DIODE - A package structure of light emitting diode includes a substrate and a light emitting diode die. The substrate has an upper surface and a lower surface opposite to each other. Two upper metal pads without mutual conduction are arranged on the upper surface. Two lower metal pads without mutual conduction are arranged on the lower surface. The light emitting diode die is disposed across the two upper metal pads. The light emitting diode die has a first electrode and a second electrode electrically connected to the two upper metal pads respectively. Wherein an orthographic projection area of one of the lower metal pads is greater than or equal to an orthographic projection area of the light emitting diode die, and the orthographic projection area of the light emitting diode die is totally located within the orthographic projection area of one of the lower metal pads. | 06-25-2015 |
| 20150188000 | LIGHT EMITTING DIODE PACKAGE AND LIGHT EMITTING DIODE MODULE - A light emitting diode (LED) package includes at least one light emitting unit having a first electrode and a second electrode, a first molding compound covering a part of the light emitting unit to expose the first electrode and the second electrode, and a first light transmissive plate disposed on the first molding compound opposite the light emitting unit. A side surface of the first molding compound and a side surface of the first light transmissive plate are coplanar or have even adjoined edges. | 07-02-2015 |
| 20150188014 | LIGHT EMITTING CHIP - A light emitting chip includes a light emitting unit, a eutectic layer and a surface passivation layer. The eutectic layer has a first surface and a second surface opposite to each other. The light emitting chip connects to the first surface of the eutectic layer. The surface passivation layer covers the second surface of the eutectic layer. A material of the surface passivation layer includes at least a metal of an oxidation potential from −0.2 volts to −1.8 volts. | 07-02-2015 |
| 20150372449 | FLIP CHIP TYPE LASER DIODE - A flip chip type laser diode includes a substrate, a first semiconductor layer, an emitting layer, a second semiconductor layer, at least one current conducting layer, a patterned insulating layer, at least one first electrode and a second electrode. The first semiconductor layer is disposed on the substrate. The emitting layer is disposed on a part of the first semiconductor layer. The second semiconductor layer is disposed on the emitting layer and forms a ridge mesa. The current conducting layer is disposed on a part of the first semiconductor layer. The patterned insulating layer covers the first semiconductor layer, the emitting layer, a part of the second semiconductor layer and a part of the current conducting layer. The first electrode and the second electrode are disposed on areas of the current conducting layer and the second semiconductor layer which are not covered by the patterned insulating layer. | 12-24-2015 |
| 20150372450 | FLIP CHIP TYPE LASER DIODE AND FLIP CHIP TYPE LASER DIODE PACKAGE STRCTURE - A flip chip type laser diode includes a first substrate, a first semiconductor layer disposed on the first substrate, an emitting layer disposed on one part of the first semiconductor layer, a second semiconductor layer disposed on the emitting layer and forming a ridge mesa, a current conducting layer disposed on another part of the first semiconductor layer, a patterned insulating layer covering the second semiconductor layer and the current conducting layer and including a first zone and a second zone which respectively expose a part of the current conducting layer and a part of the second semiconductor layer, a first electrode and a second electrode respectively disposed on the first zone and the second zone. A projection of the ridge mesa projected to the first substrate covers a part of projections of the first electrode and the second electrode projected to the first substrate. | 12-24-2015 |
| 20150380618 | FLIP CHIP PACKAGE STRUCTURE AND WAFER LEVEL PACKAGE STRUCTURE - A flip chip package structure includes a package base and a LED chip. The package base includes a first substrate, a first and a second electrodes disposed on the first substrate and a bonding layer disposed on the first substrate. The LED chip is flipped on the package base and includes an epitaxy layer, a third and a fourth electrodes disposed on the epitaxy layer and contacting the first and the second electrodes, a second insulating layer disposed between the third and the fourth electrodes, and a plurality of bonding pillars disposed on the second insulating layer and contacting the bonding layer. A minimum interval between the bonding layer, the first and the second electrodes and a minimum interval between the bonding pillars, the second and the third electrodes are larger than a width of each bonding pillar. | 12-31-2015 |
| 20160043281 | METHOD OF FABRICATING A LIGHT EMITTING DIODE DEVICE - The present invention relates to a light emitting diode (LED) and a flip-chip packaged LED device. The present invention provides an LED device. The LED device is flipped on and connected electrically with a packaging substrate and thus forming the flip-chip packaged LED device. The LED device mainly has an Ohmic-contact layer and a planarized buffer layer between a second-type doping layer and a reflection layer. The Ohmic-contact layer improves the Ohmic-contact characteristics between the second-type doping layer and the reflection layer without affecting the light emitting efficiency of the LED device and the flip-chip packaged LED device. The planarized buffer layer id disposed between the Ohmic-contact layer and the reflection layer for smoothening the Ohmic-contact layer and hence enabling the reflection layer to adhere to the planarized buffer layer smoothly. Thereby, the reflection layer can have the effect of mirror reflection and the scattering phenomenon on the reflected light can be reduced as well. | 02-11-2016 |
| 20160049555 | LIGHT EMITTING DIODE DEVICE - The present invention relates to a light emitting diode (LED) and a flip-chip packaged LED device. The present invention provides an LED device. The LED device is flipped on and connected electrically with a packaging substrate and thus forming the flip-chip packaged LED device. The LED device mainly has an Ohmic-contact layer and a planarized buffer layer between a second-type doping layer and a reflection layer. The Ohmic-contact layer improves the Ohmic-contact characteristics between the second-type doping layer and the reflection layer without affecting the light emitting efficiency of the LED device and the flip-chip packaged LED device. The planarized buffer layer id disposed between the Ohmic-contact layer and the reflection layer for smoothening the Ohmic-contact layer and hence enabling the reflection layer to adhere to the planarized buffer layer smoothly. Thereby, the reflection layer can have the effect of mirror reflection and the scattering phenomenon on the reflected light can be reduced as well. | 02-18-2016 |
| 20160079496 | LIGHT-EMITTING DIODE PACKAGE STRUCTURE - A light-emitting diode package structure includes a package carrier, a light guiding component and a light emitting unit. The light guiding component is disposed on the package carrier. The light emitting unit is disposed on an upper surface of light guiding component relatively distant from the package carrier. A horizontal projection area of the light guiding component is greater than that of the light emitting unit. The light emitting unit is adapted to emit a light beam, and a portion of the light beam enters the light guiding component and emits from the upper surface of the light guiding component. An included angle existing between the light beam and a normal direction of the upper surface ranges from 0 degree to 75 degrees. | 03-17-2016 |
| 20160111855 | FLIP CHIP TYPE LASER DIODE AND LATERAL CHIP TYPE LASER DIODE - A flip chip type laser diode includes a removable substrate, a first semiconductor layer, an emitting layer, a second semiconductor layer, at least one current conducting layer, a patterned insulating layer, at least one first electrode and a second electrode. The first semiconductor layer is disposed on the removable substrate. The emitting layer is disposed on a part of the first semiconductor layer. The second semiconductor layer is disposed on the emitting layer and forms a ridge mesa. The current conducting layer is disposed on a part of the first semiconductor layer. The patterned insulating layer covers the first semiconductor layer, the emitting layer, a part of the second semiconductor layer and a part of the current conducting layer. The first electrode and the second electrode are disposed on areas of the current conducting layer and the second semiconductor layer which are not covered by the patterned insulating layer. | 04-21-2016 |
