Yu-Syuan
Yu-Syuan Chen, Taipei City TW
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20080207275 | Eyeglasses having a Bluetooth wireless earphone which plays MP3 music - A pair of eyeglasses having a Bluetooth wireless earphone which plays MP3 music is provided with a Bluetooth wireless earphone or a Bluetooth earphone with a built-in MP3 player which is fixed on a stand of an eyeglass frame by absorption with magnets, locking with locking buttons, or clipping with a clip. | 08-28-2008 |
Yu-Syuan Chen, New Taipei City TW
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20150129294 | ELECTRIC WIRING SEAT AND ASSEMBLY THEREOF - A wiring seat includes an insulative base and a connecting member. The insulative base has a fixing hole and an engagement hole or a through hole beside the fixing hole. The connecting member has a conductive body. The conductive body is bendingly extended with a positioning sheet engaging with the engagement hole or a terminal pin passing the through hole. The conductive body has a passing hole corresponding to the fixing hole. | 05-14-2015 |
Yu-Syuan Lin, Hsinchu City TW
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20110309371 | SCHOTTKY DIODE STRUCTURE AND METHOD FOR FABRICATING THE SAME - A Schottky diode structure and a method for fabricating the same, which are based on the principle of charge compensation, wherein a P-type gallium nitride layer is added to a Schottky diode structure, and wherein the PN junction of the P-type gallium nitride layer and the N-type gallium nitride layer decreases the non-uniformity of the surface electric field distribution, whereby the breakdown voltage of the element is raised. | 12-22-2011 |
Yu-Syuan Lin, Lukang Township TW
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20150028345 | TRANSISTOR HAVING METAL DIFFUSION BARRIER AND METHOD OF MAKING THE SAME - A transistor includes a substrate, a channel layer over the substrate, an active layer over the channel layer, a metal diffusion barrier over the active layer, and a gate over the metal diffusion barrier. The active layer has a band gap discontinuity with the channel layer. | 01-29-2015 |
20150034958 | HEMT-COMPATIBLE LATERAL RECTIFIER STRUCTURE - The present disclosure relates to a high electron mobility transistor compatible power lateral field-effect rectifier device. In some embodiments, the rectifier device has an electron supply layer located over a layer of semiconductor material at a position between an anode terminal and a cathode terminal. A layer of doped III-N semiconductor material is disposed over the electron supply layer. A layer of gate isolation material is located over the layer of doped III-N semiconductor material. A gate structure is disposed over layer of gate isolation material, such that the gate structure is separated from the electron supply layer by the layer of gate isolation material and the layer of doped III-N semiconductor material. The layer of doped III-N semiconductor material modulates the threshold voltage of the rectifier device, while the layer of gate isolation material provides a barrier that gives the rectifier device a low leakage. | 02-05-2015 |
Yu-Syuan Wu, Taipei City TW
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20150132852 | TISSUE CULTURING METHOD, CULTURING METHOD OF FERNS AND EXPLANT OBTAINED THEREFROM - A tissue culturing method includes following steps: providing a chopped gametophyte, generating calluses by culturing the chopped gametophyte, and performing apogamic regeneration of sporophytes, by culturing the calluses in a culture fluid to develop the sporophytes from the calluses. The present invention also provides a tissue culturing method of ferns and an explant. | 05-14-2015 |