Patent application number | Description | Published |
20100097306 | Gamma voltage conversion device - Gamma voltage conversion device includes a gamma voltage conversion circuit, an amplifier, and a gamma voltage adjusting circuit. The gamma voltage conversion circuit generates a first gamma voltage conformed to a first gamma curve according to a grey level. The amplifier includes a first input end receiving the first gamma voltage, a second end, and an output end. The amplifier outputs the first or a second gamma voltage conformed to a second gamma curve according to the grey level according to the first and the second ends of the amplifier. The gamma voltage adjusting circuit coupled between the second input end and the output end of the amplifier controls the amplifier to output the first or the second gamma voltage as the gamma driving voltage according to the grey level and a gamma curve selection signal. | 04-22-2010 |
20100164724 | Amplitude Shift Keying Demodulator and Radio Frequency Identification System using the same - An exemplary amplitude shift keying (ASM) demodulator and a radio frequency identification (RFID) system using the same are provided. The ASM demodulator is adapted to demodulate an alternating current input signal and generate a demodulated envelope signal. The ASM demodulator includes a signal input terminal group, an input rectifier circuit, a current mirror circuit electrically coupled to the input rectifier circuit, an output stage electrically coupled to the current mirror circuit, and a low pass filter electrically coupled to the output stage. The input rectifier circuit is electrically coupled to the signal input terminal group and adapted to perform a rectifying operation applied to the alternating current input signal. The input rectifier circuit includes a plurality of electrically coupled transistors and a gate electrode of each of the transistors is unconnected with a source electrode and a drain electrode itself. | 07-01-2010 |
20100171687 | DISPLAY DEVICE HAVING SLIM BORDER-AREA ARCHITECTURE AND DRIVING METHOD THEREOF - A display device having slim border-area architecture is disclosed. The display device includes a substrate, a plurality of data lines, a plurality of gate lines, a plurality of auxiliary gate lines and a driving module. The substrate includes a display area and a border area. The data lines, the gate lines and the auxiliary gate lines are disposed in the display area. The driving module is disposed in the border area. The gate lines are crossed with the data lines perpendicularly. The auxiliary gate lines are parallel with the data lines. Each auxiliary gate line is electrically connected to one corresponding gate line. The data and auxiliary gate lines are electrically connected to the driving module based on an interlace arrangement. Further disclosed is a driving method for delivering gate signals provided by the driving module to the gate lines via the auxiliary gate lines. | 07-08-2010 |
20100321341 | PHOTO SENSOR, METHOD OF FORMING THE SAME, AND OPTICAL TOUCH DEVICE - The present invention provides a photo sensor, a method of forming the photo sensor, and a related optical touch device. The photo sensor includes a first electrode, a second electrode, a first silicon-rich dielectric layer and a second silicon-rich dielectric layer. The first silicon-rich dielectric layer is disposed between the first electrode and the second electrode for sensing infrared rays, and the second silicon-rich dielectric layer is disposed between the first silicon-rich dielectric layer and the second electrode for sensing visible light beams. The multi-layer structure including the first silicon-rich dielectric layer and the second silicon-rich dielectric layer enables the single photo sensor to effectively detect both infrared rays and visible light beams. Moreover, the single photo sensor is easily integrated into an optical touch device to form optical touch panel integrated on glass. | 12-23-2010 |
20110090196 | LIQUID CRYSTAL DISPLAY HAVING PIXEL DATA SELF-RETAINING FUNCTIONALITY AND OPERATION METHOD THEREOF - A liquid crystal display having pixel data self-retaining functionality includes a gate line for delivering a gate signal, a data line for delivering a data signal, a control unit for providing a first control signal and a second control signal, a data switch, a voltage-control inverter, a liquid crystal capacitor, and a pass transistor. The data switch is utilized for inputting the data signal to become a first data signal according to the gate signal. The voltage-control inverter is utilized for inverting the first data signal to generate a second data signal furnished to the liquid crystal capacitor according to the enable operation of the first control signal. The pass transistor is used for passing the second data signal to become the first data signal or for passing the first data signal to become the second data signal according to the second control signal. | 04-21-2011 |
20120044215 | Memory Circuit, Pixel Circuit, and Data Accessing Method Thereof - A pixel circuit includes a pixel unit and a memory circuit. The memory circuit includes a first switch, a switch unit, a second switch, and a plurality of memory units. Each of the memory units includes a third switch and a capacitor, where the capacitors of the memory units have a same capacitance. A data accessing method applied on the pixel circuit includes determining an order of writing a plurality of first voltages, which are loaded from a data line, according to weights of bits within a first bit string, where the bits are respectively corresponding to the first voltages, and includes determining an order and loading durations of loading a plurality of second voltages, which are previously stored in the memory units, according to weights of bits within a second bit string, where the bits are respectively corresponding to the second voltages. | 02-23-2012 |
20120133392 | MULTIPLEX GATE DRIVING CIRCUIT - A multiplex gate driving circuit includes plural driving modules. In comparison with the prior art, each driving stage of the driving module has less number of transistors. From the first to the seventh example, each driving stage is implemented by only four transistors. In the eighth example and the ninth example, each driving stage is implemented by only two transistors. In other words, the driving stage of the multiplex gate driving circuit has less number of transistors, thereby reducing the layout area of the invisible zone of the LCD panel. | 05-31-2012 |
20140160096 | DISPLAY HAVING SHARED DRAIN STRUCTURE - A display includes a source driver, a demultiplexer, a first data line, a second data line, a first pixel and a second pixel. The demultiplexer includes a first pixel signal transmission unit and a second pixel signal transmission unit. The first pixel signal transmission unit includes a first sub-pixel signal transmission unit, a second sub-pixel signal transmission unit and a third sub-pixel signal transmission unit. The first sub-pixel signal transmission unit and the second sub-pixel signal transmission unit share a drain. A second pixel signal transmission unit next to the first pixel signal transmission unit includes a fourth sub-pixel signal transmission unit, a fifth sub-pixel signal transmission unit and a sixth sub-pixel signal transmission unit. The fourth sub-pixel signal transmission unit and the fifth sub-pixel signal transmission unit share another drain. | 06-12-2014 |
20150062088 | OPTICAL TOUCH DEVICE AND METHOD OF FORMING PHOTO SENSOR - A method of forming a photo sensor includes the following steps. A substrate is provided, and a first electrode is formed on the substrate. A first silicon-rich dielectric layer is formed on the first electrode for sensing an infrared ray, wherein the first silicon-rich dielectric layer comprises a silicon-rich oxide layer, a silicon-rich nitride layer, or a silicon-rich oxynitride layer. A second silicon-rich dielectric layer is formed on the first silicon-rich dielectric layer for sensing visible light beams, wherein the second silicon-rich dielectric layer comprises a silicon-rich oxide layer, a silicon-rich nitride layer, or a silicon-rich oxynitride layer. A second electrode is formed on the second silicon-rich dielectric layer. | 03-05-2015 |