Yu-Fen
Yu-Fen Chang, Hukou TW
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20120228646 | LIGHT EMITTING DIODE PACKAGE AND METHOD FOR MAKING THE SAME - An LED package includes a substrate; a plurality of LED units formed on the substrate; and a phosphor tape arranged on the LED units. Light from the LED units travels to an external environment through the phosphor tape. The phosphor tape has phosphor particles evenly distributed therein. A method for forming the LED package is also provided. | 09-13-2012 |
20120241773 | LED BAR MODULE WITH GOOD HEAT DISSIPATION EFFICIENCY - An LED bar module includes a lengthwise base and a number of LED chips. The lengthwise base includes a metal layer, a metal circuit layer, and an insulated layer between the metal layer and the metal circuit layer. The insulated layer has a groove in a central thereof to expose a part of the metal layer. The LED chips are placed in the groove and directly contact the exposed part of the metal layer. The metal circuit layer has two connecting portions electrically connecting with the LED chips. The LED chips are arranged in a line which is located between and juxtaposed with the two connecting portions of the metal circuit layer. | 09-27-2012 |
Yu-Fen Chang, Hsinchu City TW
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20140198460 | Micro Secure Digital Adapter - A micro secure digital (SD) adapter, for adapting a micro SD card to an SD interface, the micro SD adapter comprising a micro SD slot, for disposing the micro SD card; a pin module, comprising a plurality of signal pins, a first ground pin, and a second ground pin; a plurality of connectors, for conducting the plurality of signal pins and the first ground pin to the micro SD card according to a pin configuration of the micro SD card when the micro SD card is disposed in the micro SD slot; and a conducting module, electrically connected between a terminal of a first connector corresponding to the first ground pin and the second ground pin. | 07-17-2014 |
Yu-Fen Chen, Taichung County TW
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20120184843 | METHOD AND APPARATUS FOR BRAIN PERFUSION MAGNETIC RESONANCE IMAGES - The present invention discloses a method and apparatus for brain perfusion magnetic resonance imaging (MRI) technique with the removal of cerebrospinal fluid (CSF) pixels. This invention utilizes a CSF/brain-contrast-enhanced image, wherein the CSF/brain-contrast-enhanced image is defined as the signal difference between CSF and brain matter divided by a standard deviation of air background random noise is larger than 3, acquired from the subject's brain, and applies a segmentation technique to remove the CSF pixels. After removing the CSF pixels on parametric images, the extent of brain tissue with delayed perfusion can be better identified. By using a good region of interest enclosing the correct delayed-perfusion region, the measurement on the tissue volume and perfusion parameters would be more accurate than the area contaminated by CSF pixels. | 07-19-2012 |
Yu-Fen Chi, Taipei County TW
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20150355427 | CABLE CONNECTION CASING - A cable splice box is disclosed. The cable splice box includes a pillar to form therein a waterproof structure. The pillar includes a pillar body having at least two longitudinal grooves, each of which has a bore diameter X configured to accommodate a cable segment; a longitudinal surface having at least two longitudinal slits, each of which has a width Y not less than X, corresponds to one of the two longitudinal grooves, and forms an opening thereon; and two longitudinal elastic pieces, each of which is disposed on one of the at least two longitudinal slits to keep the cable segment in the respective longitudinal groove. The cable splice box provides better operation, reduced cost and consistent construction quality. | 12-10-2015 |
Yu-Fen Wang, Tainan City TW
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20150104938 | METHOD FOR FORMING DAMASCENE OPENING AND APPLICATIONS THEREOF - A method for forming a damascene opening, wherein the method comprises steps as follows: Firstly, a semiconductor structure comprising an inter-metal dielectric (IMD), a first hard mask layer and a second hard mask layer stacked in sequence is provided, wherein the semiconductor structure has at least one trench extending downwards from the second hard mask layer to the IMD. A plasma treatment is then performed to modify a portion of the first hard mask layer exposed from the trench. Subsequently, a wet treatment is performed to remove the second hard mask layer and a portion of the first hard mask layer, wherein the plasma-modified portion of the first patterned hard mask layer has a first removing rate substantially less than a second removing rate of the second hard mask layer in the wet treatment. | 04-16-2015 |