Patent application number | Description | Published |
20100029035 | METHOD OF MANUFACTURING A PHOTOELECTRONIC DEVICE - This application discloses a method of manufacturing a photoelectronic device comprising steps of providing a semiconductor stack layer, forming at least one metal adhesive on the semiconductor stack layer by a printing technology, forming an electrode by heating the metal adhesive to remove the solvent in the metal adhesive, wherein an ohmic contact is formed between the electrode and the semiconductor stack layer. | 02-04-2010 |
20100258171 | SOLAR PHOTOVOLTAIC DEVICE - A solar photovoltaic device is provided and includes a solar cell body, a window layer on the solar cell body, and a current collection layer on the window layer. The current collection layer includes a patterned structure, and a portion of the window layer is exposed by the patterned structure. | 10-14-2010 |
20110005595 | SOLAR CELL MODULE AND THE FABRICATION METHOD OF THE SAME - The application illustrates a solar cell module, included a base device, a solar cell on the base device, and a concentrator on the solar cell. The concentrator directly contacts with the solar cell and concentrates the light to the solar cell for opto-electric transformation. | 01-13-2011 |
20130286634 | METHOD FOR MANUFACTURING OPTOELECTRONIC DEVICES - A method for manufacturing optoelectronic devices comprising the steps of: providing a common growth substrate; forming a light-emitting epitaxy structure on the common growth substrate; forming a stripping layer on the light-emitting epitaxy structure; forming a solar cell epitaxy structure on the stripping layer; forming an adhesive layer on the solar cell epitaxy structure; proving a solar cell permanent substrate on the adhesive layer; and removing the stripping layer to form a light-emitting device and a solar cell device separately. | 10-31-2013 |
20130298972 | OPTOELECTRONIC DEVICE AND THE MANUFACTURING METHOD THEREOF - A method for manufacturing an optoelectronic device includes steps of: providing an optoelectronic structure; forming a first contact layer having a pattern on the upper surface of the optoelectronic structure; forming a dielectric layer on the first contact layer and the optoelectronic structure; removing the dielectric layer on the first contact layer; and forming an electrode structure on the first contact layer. | 11-14-2013 |
20140196782 | METHOD FOR MAKING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MADE THEREBY - Disclosed is a method for yield enhancement of making a semiconductor device. The method for yield enhancement of making a semiconductor device comprises the steps of: providing the semiconductor device comprising an epitaxial layer including a defect; forming a dielectric layer on the epitaxial layer; detecting and identifying a location of the defect; and etching the dielectric layer and leaving a part of the dielectric layer to cover an area substantially corresponding to the detected defect. The semiconductor device made by the method is also disclosed. | 07-17-2014 |
20140199784 | Method and Apparatus for Making a Semiconductor Device - Disclosed is an apparatus and method for yield enhancement of making a semiconductor device. The apparatus for yield enhancement of making a semiconductor device comprises: a semiconductor device comprising an epitaxial layer in which a defect is included, and a photo-resistor on the epitaxial layer and covering the defect; an image recognition system to detect and identify a location of the defect; and an exposing module comprising a first light source to expose a part of the photo-resistor substantially corresponding to the detected defect identified by the image recognition system. | 07-17-2014 |
20150155433 | LIGHT-EMITTING DEVICE - A light-emitting device includes: a Distributed Bragg reflector comprising alternate first semiconductor layers and second semiconductor layers, wherein each first semiconductor layer comprises a low-refractive-index part having a depth; and a light-emitting semiconductor stack associated with the Distributed Bragg reflector; wherein the depths of the low-refractive-index parts of the first semiconductor layers are gradually changed in a direction toward the light-emitting semiconductor stack. | 06-04-2015 |