Yu-Chao
Yu Chao Chang, New Taipei City TW
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20150201268 | HEADPHONE - A headphone includes a headphone assembly which includes a head band, two joining structures and two in-ear components pivoted to two ends of the head band by the joining structures, and a sensor module which is disposed in the headphone assembly and includes an upper part, a lower part and a press sensor disposed between the upper part and the lower part and having a sensing face. The upper part and the lower part are designated with inner structures of the head band or the in-ear components. The press sensor detects states of the headphone by judging whether the sensing face is pressed by the upper or lower part by virtue of elastic deformation or movement of the upper part and the lower part at the head band and the joining structure while wearing and removing the headphone. The headphone uses signals from the press sensor to control actions thereof. | 07-16-2015 |
Yu Chao Lin, Hsinchu TW
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20140284604 | SEMICONDUCTOR STRUCTURE FOR EXTREME ULTRAVIOLET ELECTROSTATIC CHUCK WITH REDUCED CLAMPING EFFECT - The present disclosure provides one embodiment of a semiconductor structure. The semiconductor structure includes a semiconductor substrate having a front surface and a backside surface; integrated circuit features formed on the front surface of the semiconductor substrate; and a polycrystalline silicon layer disposed on the backside surface of the semiconductor substrate. | 09-25-2014 |
Yu Chao Lin, Miaoli City TW
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20140061655 | METHOD FOR EXTREME ULTRAVIOLET ELECTROSTATIC CHUCK WITH REDUCED CLAMPING EFFECT - The present disclosure provides one embodiment of a semiconductor structure. The semiconductor structure includes a semiconductor substrate having a front surface and a backside surface; integrated circuit features formed on the front surface of the semiconductor substrate; and a polycrystalline silicon layer disposed on the backside surface of the semiconductor substrate. | 03-06-2014 |
Yu Chao Lin, Hsinchu City TW
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20150132971 | PLASMA GENERATION AND PULSED PLASMA ETCHING - One or more plasma etching techniques are provided. Selective plasma etching is achieved by introducing a gas into a chamber containing a photoresist over a substrate, establishing a bias at a frequency to convert the gas to a plasma at the frequency, and using the plasma to etch the photoresist. The frequency controls an electron density of the plasma and by maintaining a low electron density causes free radicals of the plasma to chemically etch the photoresist, rather than physically etching using ion bombardment. A mechanism is thus provided for chemically etching a photoresist under what are typically physical etching conditions. | 05-14-2015 |
Yu-Chao Lin, Taoyuan County TW
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20090273699 | IMAGE PROCESSING METHOD, ELECTRONIC DEVICE THEREOF, AND RECORDING MEDIUM THEREOF - An image processing method, an electronic device thereof, and a recording medium thereof are provided, which are applicable for processing an image captured by an electronic device. In this method, a default direction is defined first, and a current usage direction of the electronic device is obtained then. If the usage direction is not consistent with the default direction, the image is adjusted to a correct direction according to both the usage direction and the default direction. Finally, the adjusted image is recorded. Therefore, regardless of the direction along which the user holds the electronic device when capturing the image, the recorded image is always in the correct direction. The rotation operations performed to the images that are not in the correct direction can be omitted when browsing the images, so as to greatly increase the convenience and smoothness in browsing images. | 11-05-2009 |
Yu-Chao Lin, Hsinchu County TW
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20130328705 | DECODING METHOD AND DECODER FOR UNARY/Kth ORDER EXPONENTIAL GOLOMB CODES - A decoding method for unary/k | 12-12-2013 |
Yu-Chao Lin, Hsin-Chu TW
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20140183661 | FinFET Device Structure and Methods of Making Same - Embodiments of the present disclosure are a method of forming a semiconductor device, a method of forming a FinFET device, a FinFET device. An embodiment a method for semiconductor device, the method comprising forming a first dielectric layer over a substrate, forming a first hardmask layer over the first dielectric layer, and patterning the first hardmask layer to form a first hardmask portion with a first width. The method further comprises forming a first raised portion of the first dielectric layer with the first width, wherein the first raised portion is aligned with the first hardmask portion, and forming a first spacer and a second spacer over the first dielectric layer, wherein the first spacer and the second spacer are on opposite sides of the first raised portion, and wherein the sidewalls of the first spacer and the second spacer are substantially orthogonal to the top surface of the substrate. | 07-03-2014 |
20140256093 | FinFET Device Structure and Methods of Making Same - Embodiments of the present disclosure are a method of forming a semiconductor device and a method of forming a FinFET device. An embodiment is a method of forming a semiconductor device, the method including forming a first dielectric layer over a substrate, forming a first hardmask layer on the first dielectric layer, and patterning the first hardmask layer to form a first hardmask portion with a first width. The method further includes forming a second dielectric layer on the first dielectric layer and the first hardmask portion, forming a third dielectric layer on the second dielectric layer, and etching the third dielectric layer and a portion of the second dielectric layer to form a first and second spacer on opposite sides of the first hardmask portion. | 09-11-2014 |
20140256094 | FinFETs and Methods for Forming the Same - Methods for forming a semiconductor device and a FinFET device are disclosed. A method comprises forming a dummy gate electrode layer over a substrate, the dummy gate electrode layer having a first height, forming a first etch stop layer on the dummy gate electrode layer, forming a first hard mask layer on the first etch stop layer, and patterning the first hard mask layer. The method further comprises patterning the first etch stop layer to align with the patterned first hard mask layer, and patterning the gate electrode layer to form a dummy gate electrode, the dummy gate electrode aligning with the patterned first etch stop layer, wherein after the patterning the gate electrode layer the first hard mask layer has a vertical sidewall of a second height, the second height being less than the first height, and the first hard mask layer having a rounded top surface. | 09-11-2014 |
20150118815 | FinFET Device Structure and Methods of Making Same - Embodiments of the present disclosure are a method of forming a semiconductor device, a method of forming a FinFET device, a FinFET device. An embodiment a method for semiconductor device, the method comprising forming a first dielectric layer over a substrate, forming a first hardmask layer over the first dielectric layer, and patterning the first hardmask layer to form a first hardmask portion with a first width. The method further comprises forming a first raised portion of the first dielectric layer with the first width, wherein the first raised portion is aligned with the first hardmask portion, and forming a first spacer and a second spacer over the first dielectric layer, wherein the first spacer and the second spacer are on opposite sides of the first raised portion, and wherein the sidewalls of the first spacer and the second spacer are substantially orthogonal to the top surface of the substrate. | 04-30-2015 |
20150132910 | FinFET Device Structure and Methods of Making Same - Embodiments of the present disclosure are a method of forming a semiconductor device and a method of forming a FinFET device. An embodiment is a method of forming a semiconductor device, the method including forming a first dielectric layer over a substrate, forming a first hardmask layer on the first dielectric layer, and patterning the first hardmask layer to form a first hardmask portion with a first width. The method further includes forming a second dielectric layer on the first dielectric layer and the first hardmask portion, forming a third dielectric layer on the second dielectric layer, and etching the third dielectric layer and a portion of the second dielectric layer to form a first and second spacer on opposite sides of the first hardmask portion. | 05-14-2015 |
Yu-Chao Wang, Taipei TW
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20090291133 | METHODS AND COMPOSTIONS FOR ENHANCING TRANSDERMAL DRUG DELIVERY - Methods and compositions for enhancing transdermal delivery of a bioactive agent. The method contains the step of applying to a skin tissue an effective amount of a composition comprising: (a) a drug vehicle; (b) a bioactive agent encapsulated within the drug vehicle; (c) a plurality of proteolytic enzyme molecules conjugated onto the surface of the drug vehicle; and (d) a pharmaceutically acceptable carrier, for a period of time effective to deliver the bioactive agent across the skin tissue at a desired dosage. | 11-26-2009 |
20110052711 | CONTROLLED RELEASE MULTIDRUG FORMULATIONS FOR SPINAL CORD INJURY - A controlled release multidrug formulation for improving locomotor recovery after spinal cord injury comprising: (a) a first composition comprising a first bioactive agent, encapsulated within a first polymeric particle; (b) a second composition comprising a second bioactive agent, encapsulated within a second polymeric particle, wherein the second polymeric particle is encapsulated within the first polymeric particle; and (c) a third composition comprising a third bioactive agent, encapsulated within either the first or the second polymeric particle, wherein the second composition is released subsequently to the release of the first composition, and wherein the first bioactive agent is a neurotrophic factor, the second bioactive agent is a collagen synthesis inhibitor, and the third bioactive agent is selected from the group consisting of cyclic AMP (cAMP), an adenylate cyclase activator and a Rho inhibitor. | 03-03-2011 |
Yu-Chao Wu, Taipei City TW
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20140001510 | LIGHT EMITTING ELEMENT AND METHOD OF PRODUCING THE SAME | 01-02-2014 |
Yu-Chao Wu, New Taipei City TW
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20120069567 | ILLUMINATION SYSTEM AND METHOD OF MANUFACTURING MULTI-CHIP PACKAGE STRUCTURE FOR LIGHT EMITTING DIODES - One embodiment of the invention provides an illumination system including a light-source supporting body and a power supporting body. The light-source supporting body has a first groove. At least a light-source module is received in the first groove. The power supporting body has second groove. At least a power module is received in the second groove. The light-source supporting body is detachably fixed on the power supporting body. Each light-source module includes a multichip package structure composed of a plurality of light-emitting chips, and each of the light-source modules and the power module are separated by the light-source supporting body and the power supporting body. | 03-22-2012 |
20140060906 | LIGHT EMITTING SYSTEM - A light emitting system is provided. An exemplary embodiment of a light emitting system comprising at least a light emitting module comprises a substrate, and light emitting rows supported by the substrate, wherein each light emitting row has unpackaged light emitting chips, surrounded by a reflective structure, and a transparent lens is disposed above the light emitting rows for mixing lights emitted from the light emitting rows to form a light source. An exemplary embodiment of a light emitting module of the invention can improve light emitting efficiency effectively with achieving better heat dissipation efficiency. | 03-06-2014 |
Yu-Chao Wu, Taiwan CN
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20100067224 | LIGHT EMITTING SYSTEM - A light emitting system is provided. An exemplary embodiment of a light emitting system comprising at least a light emitting module comprises a substrate, and light emitting rows supported by the substrate, wherein each light emitting row has unpackaged light emitting chips, surrounded by a reflective structure, and a transparent lens is disposed above the light emitting rows for mixing lights emitted from the light emitting rows to form a light source. An exemplary embodiment of a light emitting module of the invention can improve light emitting efficiency effectively with achieving better heat dissipation efficiency. | 03-18-2010 |
Yu-Chao Wu, Taipei County TW
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20100219430 | Light emitting system, light emitting apparatus and forming method thereof - A light emitting system, a light emitting apparatus and the forming method thereof, the light emitting system comprising a plurality of light emitting units (100) and a frame for connecting the light emitting units. Each light emitting unit comprises a substrate (102), one or a plurality of chips (104) disposed on the substrate, an annular member (110) disposed on the substrate and surrounding the chips, the annular member used for adjusting the direction of the light emitted from the chips, and a protective layer (108) covering the chips, wherein the height of the protective layer is not more than that of the annular member. | 09-02-2010 |
20100270910 | LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF - A light emitting device fabrication method. The fabrication method of the light emitting device comprises providing a light emitting semiconductor device; positioning a plurality of luminescent particles at the optical path of the light emitting semiconductor device; and reducing the distance between the luminescent particles to enhance the molecular attraction between the luminescent particles, than the luminescent particles is coagulated to a luminescent powder layer by the molecular attraction. | 10-28-2010 |