Patent application number | Description | Published |
20130153979 | THREE-DIMENSIONAL NON-VOLATILE MEMORY DEVICE, MEMORY SYSTEM AND METHOD OF MANUFACTURING THE SAME - A three-dimensional (3-D) non-volatile memory device includes channel structures each including channel layers stacked over a substrate and extending in a first direction, wherein the channel layers include well regions, respectively, vertical gates located and spaced from each other between the channel structures, and a well pick-up line contacting on the well regions of the channel layers and extending in a second direction crossing the channel structures. | 06-20-2013 |
20130161783 | SEMICONDUCTOR DEVICE INCLUDING ISOLATION LAYER AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes an isolation trench formed in a semiconductor substrate; an isolation layer filling the isolation trench; and a first epitaxial layer interposed between the isolation layer and the semiconductor substrate, wherein a lattice structure of the semiconductor substrate has an angle difference from a lattice structure of the first epitaxial layer adjacent to the semiconductor substrate. | 06-27-2013 |
20130170303 | NONVOLATILE MEMORY DEVICE, METHOD FOR OPERATING THE SAME, AND METHOD FOR FABRICATING THE SAME - A nonvolatile memory device includes a plurality of channel structures formed over a substrate and including a plurality of interlayer dielectric layers alternately stacked with a plurality of channel layers; first and second vertical gates alternately disposed between the channel structures along one direction crossing with the channel structure and adjoining the plurality of channel layers with a memory layer interposed therebetween; and a pair of first and second word lines disposed over or under the channel structures and extending along the one direction in such a way as to overlap with the first and second vertical gates. The first word line is connected with the first vertical gates and the second word line is connected with the second vertical gates. | 07-04-2013 |
20130307050 | NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - A nonvolatile memory device includes: a channel layer protruding perpendicular to a surface of a substrate; a tunnel insulation layer formed on a surface of the channel layer; a stack structure, in which a plurality of floating gate electrodes and a plurality of control gate electrodes are alternately formed along the channel layer; and a charge blocking layer interposed between each floating gate electrode, of the plurality of floating gate electrodes, and each control gate electrode of the plurality of control gate electrodes, wherein the floating gate electrode includes a first floating gate electrode between two control gate electrodes and a second floating gate electrode positioned in the lowermost and uppermost parts of the stack structure and having a smaller width in a direction parallel to the substrate than the first floating gate electrode. | 11-21-2013 |
20140160837 | RESISTIVE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A resistive memory device Includes word lines stacked on top of one another, at least one first selection line formed over the word lines, a first channel layer passing through the word lines and the first selection line, a first phase change material layer formed in the first channel layer and overlapping the word lines, and a first insulating layer formed in the first channel layer and overlapping the first selection line. | 06-12-2014 |
20140342519 | THREE-DIMENSIONAL NON-VOLATILE MEMORY DEVICE, MEMORY SYSTEM AND METHOD OF MANUFACTURING THE SAME - A three-dimensional (3-D) non-volatile memory device includes channel structures each including channel layers stacked over a substrate and extending in a first direction, wherein the channel layers include well regions, respectively, vertical gates located and spaced from each other between the channel structures, and a well pick-up line contacting on the well regions of the channel layers and extending in a second direction crossing the channel structures. | 11-20-2014 |
20150214240 | NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - A nonvolatile memory device includes: a channel layer protruding perpendicular to a surface of a substrate; a tunnel insulation layer formed on a surface of the channel layer; a stack structure, in which a plurality of floating gate electrodes and a plurality of control gate electrodes are alternately formed along the channel layer; and a charge blocking layer interposed between each floating gate electrode, of the plurality of floating gate electrodes, and each control gate electrode of the plurality of control gate electrodes, wherein the floating gate electrode includes a first floating gate electrode between two control gate electrodes and a second floating gate electrode positioned in the lowermost and uppermost parts of the stack structure and having a smaller width in a direction parallel to the substrate than the first floating gate electrode. | 07-30-2015 |
20150221738 | SEMICONDUCTOR DEVICE AND METHOD OF OPERATING THE SAME - A semiconductor device including a channel layer, a gate insulating layer formed on a surface of the channel layer, a cell gate pattern formed along the gate insulating layer, and an Electro Migration (EM) pattern formed in the cell gate pattern, and movable by an electric field formed between the cell gate pattern and the channel layer. | 08-06-2015 |